KR20060112855A - Defect Correction System of Mask Pattern Data for Photomask Recording Apparatus and Defect Correction Method of Mask Pattern Data - Google Patents

Abstract

In the case where the mask pattern data for the photomask recording apparatus is defective, defect correction systems and defect correction methods of mask pattern data which improve the increase in time and cost incurred by re-converting high-capacity circuit design data by reusing it are Is initiated. A defect correction system for mask pattern data according to the present invention includes an input unit for graphic data into which circuit design data and mask pattern data are input; A detection and generation unit of defect pattern data that detects and generates defect pattern data by performing an exclusive OR operation using circuit design data and mask pattern data as operands; A merger of data for generating corrected mask pattern data by performing an OR Boolean function using the defect pattern data and the mask pattern data as operands; And an output portion of the mask pattern data for providing the corrected mask pattern data to the photomask recording apparatus.

Description

Defect correction system of mask pattern data for photomask recording apparatus and defect correction method of mask pattern data {System and method for correcting defects in mask pattern data used for manufacturing photomask}

1 is a block diagram showing a configuration of an apparatus for patterning a photomask for manufacturing a conventional semiconductor device.

FIG. 2 is a flowchart illustrating a process of processing graphic data performed in each component of FIG. 1.

3 is a schematic diagram illustrating an image of mask pattern data in which a pattern missing phenomenon occurs.

4 is a block diagram showing components of a defect correction system for mask pattern data for a photomask recording apparatus according to the present invention.

FIG. 5 is a schematic diagram illustrating a generation step of defect pattern data performed by the detection and generation unit of defect pattern data of FIG. 4.

6 is a schematic diagram illustrating a generation of corrected mask pattern data performed in the merging unit of FIG. 4.

7 is a flowchart showing a defect correction method of mask pattern data for a photomask recording apparatus according to the present invention.

* Explanation of symbols for the main parts of the drawings

10: original data generation device 20: mask data conversion device

21: graphics calculation section 22: graphics conversion section

30: defect correction system of graphic data correction device or mask pattern data

31: input part of mask pattern data

32: conversion of graphic data

33: detection and generation of defect pattern data

34: merge part of data

35: output portion of the mask pattern data

40: photomask recording device

a: circuit design data b: mask pattern data

The present invention relates to an apparatus and method for manufacturing a photomask for semiconductor device manufacturing, and more particularly, to a system for correcting defects in mask pattern data for a photomask recording apparatus obtained from circuit design data for photomask patterning and using the same. A method for correcting defects in mask pattern data.

Photolithography processes are essential for the manufacture of semiconductor integrated circuits, and advances in microphotolithography technology are accelerating the scaling down of large scale integrated circuits (LSIs). In recent years, the design rules of semiconductor device fabrication have continuously decreased and require patterning of 0.1 μm or less, and the size of the pattern transferred onto the wafer has become substantially below the exposure beam wavelength. As a result, the optical proximity effect has become a major factor in determining the limit of resolution, and the improvement of the optical proximity effect is essential for more reliable control of fine threshold linewidth. This optical proximity effect retracts or deforms the line end of the photoresist in the development process of the photoresist, thereby obstructing the reliable fine threshold linewidth control, thereby correcting the circuit design data as a technique for improving the optical proximity effect. Various methods have been proposed.

In recent years, the capacity of circuit design data itself has increased due to the increased integration of semiconductor devices, and the circuit design data depends on beam blur or back scattering energy level, pattern shape and density. Since the correction data considering the optical proximity effect is input to the photomask recording apparatus, the capacity of the mask pattern data input to the actual photomask recording apparatus is further expanded compared with the original circuit design data.

Usually, the design data of a semiconductor integrated circuit created by a layout tool such as Or CAD has a GDS-II data format as a basic input / output format. Such design data can be decoded by a photomask recording device according to each manufacturer, for example, a laser beam writer or an electron beam writer, and the like. Converted to two different data formats. In general, in such a data conversion process, a data correction step taking into account the optical proximity effect, and fragmenting, resizing, or compressing data into triangles or squares according to the characteristics of the photomask recording apparatus, etc. graphic data conversion steps, such as data compression, and format transformation.

1 is a block diagram showing a configuration of an apparatus for patterning a photomask for manufacturing a conventional semiconductor device. FIG. 2 is a flowchart illustrating a process of processing graphic data performed in each component of FIG. 1.

1 and 2, a manufacturing apparatus and a manufacturing method of a photomask for manufacturing a conventional semiconductor device will be described.

The original data generating device 10 includes a circuit design means 11 and a storage medium 12 of circuit design data. The original data generating device 10 generates and stores circuit design data a (S10).

The circuit design means 11 means a commercial layout design program such as Or CAD. The circuit design data 11 is generated by the circuit design means 11. Circuit design data is graphic data that defines a pattern of elements for realizing a circuit designed on a semiconductor substrate. The circuit design data a is recorded in the storage medium 12 of the circuit design data (S11). The circuit design data is provided to the mask data conversion device 20 by a storage medium of the circuit design data. As a storage medium 12 for circuit design data, a floppy, a hard disk, a tape, a cassette, or the like can be used. Typically in large scale integrated circuits, a plurality of basic components are often arranged in an array within the circuit components. Therefore, by storing the layout of the circuit design data in the storage medium 12 of the circuit design data in the form of a basic component and a hierarchical structure, the technique of saving the storage capacity of the storage medium to increase the efficiency of data processing This is being utilized.

Next, the mask data conversion apparatus 20 generates the mask pattern data b by correcting the circuit design data a input from the original data generating apparatus 10 (S20). . The mask data conversion device 20 includes a graphic calculation unit 21 and a graphic conversion unit 22. In the mask data conversion device 20, the circuit design data (a) is optionally converted into a graphic data that can be interpreted by the photomask recording device 40 after being graphically converted to improve the optical proximity effect or the like. Format transformation. The correction step S20 of the graphic data performed by the mask data conversion device 20 includes a graphic image generation step S221, a photomask manufacturing process condition input step S222, and a graphic conversion step S223. .

The graphic calculation unit 21 generates a graphic image from the circuit design data a (S221). Next, in the graphic conversion unit 22, for example, whether it is electron beam drawing or laser drawing, the type of the low reflection mask or the type of the phase shift method, the optical variable of the exposure apparatus, the numerical aperture σ (numerical aperture ratio), the photo Photomask fabrication process conditions, such as resist composition and etching conditions, are input (S222), and circuit design data (a) is converted to improve the optical proximity effect and the like to generate optimized mask pattern data (b) (S223). However, when data correction of circuit design data for improving the optical proximity effect is not required, the photomask manufacturing process condition input step S222 is not performed, and the photomask recording apparatus 40 may analyze the data. A graphic transformation may be performed to format the circuit design data a so that the circuit design data a can be converted (S223).

Next, the graphic data correction device 30 converts the mask pattern data b input from the mask data conversion device 20 into a data format similar to that of the circuit design data a, and converts the circuit design data ( Compare with a) to detect whether the pattern is distorted or missing. When there is no error in the mask pattern data b, the graphic data correction device 30 outputs the mask pattern data b to the photomask recording device 40. If there is an error in the mask pattern data b, it is necessary to repeat the correction step S20 of the graphic data to obtain the mask pattern data b from the circuit design data a again.

Finally, the photomask recording device 40 reads the mask pattern data b received from the graphic data correction device 30 and transfers the pattern to the photomask (S40).

3 is a diagram illustrating an image of mask pattern data b in which a pattern missing phenomenon occurs. In the process of converting the circuit design data (a) into the mask pattern data (b), defects such as missing mask pattern data often occur due to problems such as software, hardware, or network of the data conversion system. Missing of the mask pattern data results in defects such as missing (D1), disconnection (D2), and dig (D3) of the pattern on the actually manufactured photomask.

Normally, such defective mask pattern data is not used, and again perform data conversion operations from the circuit design data to generate mask pattern data, and determine the presence or absence of the defect therein, and finally, if there is no defect, finally the photomask recording apparatus Is entered.

As described above, when missing of the pattern data is detected, performing data conversion from the circuit design data again to obtain normal mask pattern data may increase the data preparation time and data conversion time as the capacity of the circuit design data gradually increases. Increasingly, there is a problem of delaying the product delivery date of the photomask and lowering the productivity.

The technical problem to be achieved by the present invention is a defect in mask pattern data that can improve an increase in time and cost caused by reconverting high-capacity data by reutilizing even if the finally obtained mask pattern data is defective. A correction system and a defect correction method of mask pattern data using the same are provided.

According to an aspect of the present invention, there is provided a defect correction system for mask pattern data, comprising: an input unit of graphic data to which circuit design data and mask pattern data are input; A detection and generation unit of defect pattern data that detects and generates defect pattern data by performing an exclusive OR operation using the circuit design data and the mask pattern data as operands; A merging unit for generating corrected mask pattern data by performing an OR Boolean function using the defect pattern data and the mask pattern data as operands; And an output unit of the mask pattern data for providing the corrected mask pattern data to the photomask recording apparatus.

In addition, the defect correction method of the mask pattern data according to an embodiment of the present invention for achieving the above object, the step of receiving the circuit design data and the mask pattern data converted therefrom; Converting the circuit design data and the mask pattern data into a common internal file format; Detecting defects in the mask pattern data to generate defect pattern data; And generating corrected mask pattern data by merging the defect pattern data and the mask pattern data.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the following examples can be modified in various other forms, and the scope of the present invention is It should not be construed as limited to the embodiments. Elements denoted by the same reference numerals in the drawings means the same element.

4 is a block diagram showing components of a defect correction system for mask pattern data for a photomask recording apparatus according to the present invention. FIG. 5 schematically illustrates an XOR operation performed and a defect pattern data generation step performed by the detection and generation unit of the defect pattern data of FIG. 4, and FIG. 6 is a diagram illustrating corrected mask pattern data performed by the merge unit of the data of FIG. 4. The production steps are outlined.

Referring to FIG. 4, the defect correction system 30 of mask pattern data according to the present invention includes an input unit 31 of mask pattern data, a conversion unit 32 of graphic data, and a detection and generation unit of defect pattern data 33. ), A merge unit 34 of data, and an output unit 35 of mask pattern data. The defect correction system 30 of mask pattern data receives mask pattern data (b of FIG. 1) from the mask data conversion apparatus (20 of FIG. 1) as shown in FIG. 1, and detects the defect of mask pattern data, If there is a defect, it is corrected and graphic data is output to the photomask recording apparatus (40 in FIG. 1).

The mask pattern data input part 31 receives mask pattern data (b of FIG. 1) from circuit design data (a of FIG. 1) and the mask data conversion apparatus (20 of FIG. 1).

The graphic data conversion unit 32 converts the circuit design data and the mask pattern data into a common internal file format, respectively, to facilitate processing of the data in the defect correction system 30 of the data pattern data. (format transformation). This common internal file format may be GDS-II, MEBES, MEBES mode5, JEOL52, HL-700M / D, HL-800M / D, HL-900M / D, EBM, or BEF-2. For example, the common internal file format may be the same format as the circuit design data, or may be different. Preferably, the common internal file format has a data format that can be interpreted by the photomask recording apparatus. However, when the mask pattern data input from the mask data conversion apparatus (20 in FIG. 1) is subjected to graphic conversion in consideration of an optical proximity effect, etc., format conversion must be performed after inverse conversion of the input mask pattern data to a common internal file format. do.

The defect pattern data detection and generation unit 33 receives an exclusive OR operation using circuit design data and mask pattern data, which are input from the graphic data conversion unit 32 and have a common internal file format, as operands. Boolean function) to generate defect pattern data.

Referring to FIG. 5, by an exclusive OR operation using the circuit design data 51 and the mask pattern data 52 as operands, an inconsistency of graphic data corresponding to the missing graphic data may be detected. Generated defective pattern data 53 can be generated.

In the data merging section 34, the OR operation is performed using the defect pattern data and the mask pattern data as operands.

Referring to FIG. 6, if the OR operation using the defect pattern data 53 and the missing defective mask pattern data 52 as an operand is performed, the circuit design data is already generated without the effort of converting the circuit design data back to the mask pattern data. The corrected mask pattern data 54 can be obtained by merging the mask mask data with the defect pattern data.

In the mask pattern data output section 35, if necessary, the corrected mask pattern data is converted into a data format that can be read by the photomask recording apparatus and provided to the photomask recording apparatus.

The defect correction system 30 of the mask pattern data includes a software written in a programming language such as C ++ or C # based on C or C language, and a commercial computer including a microprocessor and memory as hardware capable of operating the software. It can be configured using.

According to the defect correction system 30 of the mask pattern data, even if there is a defect such as a missing of the mask pattern data, the circuit design is again performed by converting the defect into data to generate the defect pattern data and merging it with the defective mask pattern data. Since the correction step of the graphic data (S20 in FIG. 2) to obtain the mask pattern data from the data is not required, the photomask can be manufactured more quickly.

7 is a flowchart showing a defect correction method of mask pattern data for a photomask recording apparatus according to the present invention.

Referring to FIG. 7, a method of correcting a defect of mask pattern data according to the present invention includes: receiving circuit design data and mask pattern data converted from the same; Converting the circuit design data and the mask pattern data into a common internal file format (S32); Detecting defects of the mask pattern data to generate defect pattern data (S33, S34); Merging the defect pattern data with the mask pattern data (S35, S36).

In the step (S32) of converting the circuit design data and the mask pattern data into a common internal file format, the common internal file format may be the same format as the circuit design data or may be a different format. Preferably, the common internal file format has a data format that can be interpreted by the photomask recording apparatus. However, when the mask pattern data is subjected to graphic conversion in consideration of the optical proximity effect or the like, it is necessary to convert the input mask pattern data into the common internal file format after inverting the input mask pattern data.

In detecting the defects of the mask pattern data and generating the defect pattern data (S33 and S34), an exclusive OR operation using circuit design data and mask pattern data having a common internal file format as an operand (exclusive OR, XOR Boolean function) (S33), the data is converted into data to generate defect pattern data 341 (S34). Since most mask pattern data conversion software uses XOR operation to determine the defect of mask pattern data, graphic data for correcting defects, that is, defect pattern data, is easy to determine whether defects of mask pattern data exist. Can be generated.

In steps S35 and S36 of merging the defect pattern data 341 and the mask pattern data 312, an OR operation including the defect pattern data 341 and the mask pattern data 312 as an operand is performed. In this case, the defect pattern data 341 and the defective mask pattern data 312 may be merged to generate the mask pattern data 361 without defects.

In the defect correction method of mask pattern data for photomask recording apparatus according to the present invention, even if there is a defect such as missing mask pattern data, correction of graphic data for obtaining mask pattern data 361 from circuit design data 311 again. Since no step (S20 of FIG. 2) is required, the photomask can be manufactured more quickly.

Since the corrected mask pattern data 361 has a common internal file format, the corrected mask pattern data 361 may have the same format as that of the circuit design data 311 or a different format. However, when the common internal file format is a data format that cannot be interpreted by the photomask recording apparatus, format transformation of the corrected mask pattern data 361 is required in order to provide the photomask recording apparatus. Therefore, preferably, the common internal file format is a data format that can be interpreted by the photomask recording apparatus.

The defect correction system of the mask pattern data for the photomask recording apparatus and the defect correction method of the mask pattern data according to the present invention separately generate defect pattern data when the mask pattern data for the photomask recording apparatus is defective, and Since the merge of defective mask pattern data can be performed, the increase in time and cost incurred by reconverting high-capacity circuit design data can be improved.

Claims (7)

An input unit of graphic data to which circuit design data and mask pattern data are input; A detection and generation unit of defect pattern data that detects and generates defect pattern data by performing an exclusive OR operation using the circuit design data and the mask pattern data as operands; A merging unit for generating corrected mask pattern data by performing an OR Boolean function using the defect pattern data and the mask pattern data as operands; And And a mask pattern data output section for providing the corrected mask pattern data to a photomask recording apparatus. The method of claim 1, And a conversion unit for graphic data for converting the circuit design data and the mask pattern data into a common internal file format. The method of claim 2, And the common internal file format includes a data format that can be interpreted by the photomask recording apparatus. Receiving circuit design data and mask pattern data converted from the same; Converting the circuit design data and the mask pattern data into a common internal file format; Detecting defects in the mask pattern data to generate defect pattern data; And, And generating the corrected mask pattern data by merging the defect pattern data with the mask pattern data. The method of claim 4, wherein And the common internal file format includes a data format that can be interpreted by the photomask recording apparatus. The method of claim 4, wherein The generating of the defect pattern data may include detecting and generating the defect pattern data by performing an exclusive OR function using the circuit design data and the mask pattern data as operands. A defect correction method of mask pattern data for a device. The method of claim 4, wherein The generating of the corrected mask pattern data may include performing an OR Boolean function using the defect pattern data and the mask pattern data as operands to correct the mask pattern data. A defect correction method of mask pattern data.

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