[go: up one dir, main page]

KR20060078658A - Deformation prevention device of heater for diffusion process heater - Google Patents

Deformation prevention device of heater for diffusion process heater Download PDF

Info

Publication number
KR20060078658A
KR20060078658A KR1020040116965A KR20040116965A KR20060078658A KR 20060078658 A KR20060078658 A KR 20060078658A KR 1020040116965 A KR1020040116965 A KR 1020040116965A KR 20040116965 A KR20040116965 A KR 20040116965A KR 20060078658 A KR20060078658 A KR 20060078658A
Authority
KR
South Korea
Prior art keywords
heater
heater coil
reactor
diffusion process
coil
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020040116965A
Other languages
Korean (ko)
Inventor
김영석
김태환
Original Assignee
동부일렉트로닉스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동부일렉트로닉스 주식회사 filed Critical 동부일렉트로닉스 주식회사
Priority to KR1020040116965A priority Critical patent/KR20060078658A/en
Publication of KR20060078658A publication Critical patent/KR20060078658A/en
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H05B3/748—Resistive heating elements, i.e. heating elements exposed to the air, e.g. coil wire heater

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Resistance Heating (AREA)

Abstract

본 발명은 반도체소자 제조시 확산 공정에 사용되는 가열로에서 히터의 장시간 사용에 따른 히터코일의 휨현상을 방지하여 공정사고를 방지할 수 있도록 하는 확산공정용 가열로 히터의 변형방지장치에 관한 것이다.The present invention relates to a deformation prevention apparatus of a heater for a diffusion process heater, which prevents a process accident by preventing bending of the heater coil due to long time use of the heater in a heating furnace used for a diffusion process in manufacturing a semiconductor device.

이를 실현하기 위한 본 발명은, 확산공정을 수행할 반도체 기판이 반출입되는 원통형 반응로에, 그 반응로를 소정의 반응온도로 상승시키기 위하여 반응로의 내주면을 둘러싸도록 히터코일이 설치되되, 상기 반응로의 내주면에서 종방향으로 길게 돌출되어 형성되고 횡방향으로 관통된 다수의 히터코일 고정홈이 구비된 고정턱이 다수 형성되어 있는 확산공정용 가열로 히터의 변형방지장치에 있어서, 상기 나선형으로 설치되는 히터코일의 하부를 따라 히터코일을 지지하는 절연턱이 반응로 내주면에 걸쳐 돌출형되어, 상부피치 히터코일과 하부피치 히터코일을 격리시키도록 이루어진 발명임.
In the present invention for realizing this, a heater coil is installed in a cylindrical reactor in which a semiconductor substrate to be subjected to a diffusion process is carried in and out so as to surround the inner circumferential surface of the reactor in order to raise the reactor to a predetermined reaction temperature. In the heating apparatus for deformation process of the diffusion furnace heater is formed in the helical in which a plurality of fixing jaw is formed to protrude in the longitudinal direction from the inner circumferential surface of the furnace and provided with a plurality of heater coil fixing grooves penetrated in the transverse direction. Insulation jaw supporting the heater coil along the lower portion of the heater coil is projected over the inner circumferential surface of the reactor, the invention is made to isolate the upper pitch heater coil and the lower pitch heater coil.

확산공정, 히터, 가열로, 반응로, 히터코일Diffusion Process, Heater, Heating Furnace, Reactor, Heater Coil

Description

확산공정용 가열로 히터의 변형방지장치{Device for preventing deformation of diffusion processing furnace heater} Device for preventing deformation of diffusion processing furnace heater             

도 1은 종래 확산공정용 제조장치의 개요도,1 is a schematic diagram of a manufacturing apparatus for a conventional diffusion process;

도 2는 도 1에 도시된 장치에서 히터의 설치구조를 설명하기 위한 반응로내측부 요부 사시도,Figure 2 is a perspective view of the inner part of the reactor for explaining the installation structure of the heater in the apparatus shown in Figure 1,

도 3은 본 발명에 따른 히터의 설치구조를 설명하기 위한 반응로내측부 요부 사시도,Figure 3 is a perspective view of the inner part of the reactor for explaining the installation structure of the heater according to the present invention,

도 4는 본 발명에 따른 히터코일 설치구조 요부단면도를 나타낸다.
Figure 4 shows a cross-sectional view of the main portion of the heater coil installation structure according to the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>

10 -- 함체, 20 -- 가열부,10-enclosure, 20-heating,

21 -- 반응로, 22 -- 히터코일,21-reactor, 22-heater coil,

23 -- 고정턱, 24 -- 고정홈,23-fixing jaw, 24-fixing groove,

30 -- 로딩부, 31 -- 보트,30-loading section, 31-boat,

32 -- 엘리베이트유니트, 40 -- 배기덕트,32-elevator unit, 40-exhaust duct,

50 -- 절연턱.50-Isolation Jaw.

본 발명은 반도체소자 제조시 확산 공정에 사용되는 가열로 히터의 변형방지장치에 관한 것으로, 더욱 상세하게는 장시간 사용에 따른 히터코일의 휨현상을 방지하여 공정사고를 방지할 수 있도록 하는 확산공정용 가열로 히터의 변형방지장치에 관한 것이다.The present invention relates to an apparatus for preventing deformation of a heater in a heating furnace used in a diffusion process in manufacturing a semiconductor device, and more particularly, a diffusion process heating to prevent a process accident by preventing bending of a heater coil due to prolonged use. It relates to a deformation preventing device of a furnace heater.

일반적으로, 반도체 소자는 기판 상에 막을 형성하거나 어닐링, 이온주입된 불순물을 활성화하거나 하는 등을 수행하는 확산 공정, 기판에 불순물을 주입하는 이온 주입 공정, 기판 상에 형성된 막 상에 감광막을 도포하고 현상하는 사진공정, 기판 상에 형성된 막을 감광막을 식각 마스크로 식각하는 식각 공정 등을 거쳐 제조된다.In general, a semiconductor device includes a diffusion process for forming or annealing a film on a substrate, activating ion implanted impurities, an ion implantation process for injecting impurities into a substrate, and applying a photoresist film on a film formed on the substrate. A photo process to be developed and a film formed on the substrate are manufactured through an etching process of etching a photosensitive film with an etching mask.

이러한 공정중에서 반도체 소자를 제조할 때 처음 거치는 확산공정에서는 도 1에 도시된 바와 같은 가열로가 구비된 제조장치를 사용하고 있다.In this process, the first diffusion process for manufacturing a semiconductor device uses a manufacturing apparatus equipped with a heating furnace as shown in FIG. 1.

첨부도면에 도시된 바와 같이, 확산공정용 입형 제조장치는 크게 나누어 상측의 가열부(20)와 하측의 로딩부(30)로 이루어지는 바, 가열부(20)에는 반도체 기판을 넣어 확산공정을 진행할 수 있는 공간을 가진 관상의 반응로(21)와 상기 반응로(21)를 둘러싸고 설치되어 반응로(21)를 반응온도까지 상승 가열시킬 수 있는 히터코일(22) 등이 설치되고, 로딩부(30)에는 상기 반응로(21) 내부로 출입 가능하도록 설치되어 공정을 진행할 복수의 반도체 기판을 로딩할 수 있는 보트(31)와 상기 보트(31)를 반응로(21) 내부로 반출입시키는 엘리베이트유니트(32) 등이 설치되며, 상기 반응로(21) 내부로 소정의 반응가스를 공급하는 가스공급장치(도시되지 않음)와 반응로(21)에 남아 있는 반응가스를 외부로 배출하는 배기덕트(40) 등이 구비되어 상기 구성요소들이 함체(10)내에 설치되어 있다.As shown in the accompanying drawings, the vertical manufacturing apparatus for the diffusion process is largely divided into an upper heating part 20 and a lower loading part 30, and the heating part 20 includes a semiconductor substrate to perform the diffusion process. A tubular reactor 21 having a space therebetween and a heater coil 22 installed around the reactor 21 to raise and heat the reactor 21 to the reaction temperature are installed. 30 is installed to allow access into the reactor 21 and a boat 31 capable of loading a plurality of semiconductor substrates to be processed, and an elevator unit for carrying in and out of the boat 31 into the reactor 21. 32 and the like, a gas supply device (not shown) for supplying a predetermined reaction gas into the reactor 21 and an exhaust duct for discharging the reaction gas remaining in the reactor 21 to the outside ( 40) and the like is provided with the components (10) It has been installed.

그리하여 확산공정중에는 엘리베이트 유니트(32)가 상승하여 로딩부(30)에 있는 보트(31)에 재치된 웨이퍼를 반응로(21) 내로 반입시켜 밀폐상태에서 반응가스 등으로 소정시간, 온도, 분위기로 원하는 열처리를 하고, 이후 다시 엘리베이트 유니트(32)를 하강시켜 열처리를 마친 웨이퍼를 로딩부(30)에서 적정 온도 이하가 될 때가지 대기시킨 후 외부로 반출시켜 다음 공정으로 이송시키게 된다.Thus, during the diffusion process, the elevator unit 32 is lifted up, and the wafer placed in the boat 31 in the loading unit 30 is brought into the reactor 21 to be discharged into the reaction gas 21 for a predetermined time, temperature, and atmosphere. After the desired heat treatment, the elevator unit 32 is lowered again, and the wafer after the heat treatment is cooled until the temperature is lower than the appropriate temperature in the loading unit 30, and then transported to the outside to be transferred to the next process.

이와 같이 반응로(21) 내에는 확산공정을 위해 히터코일(22)이 반응로(21) 내부를 둘러싸도록 설치되는 바, 도 2는 종래 히터의 설치구조를 설명하기 위한 반응로내측부 요부 사시도를 나타낸다.As described above, the heater coil 22 is installed in the reactor 21 so as to surround the inside of the reactor 21 for the diffusion process, and FIG. 2 is a perspective view of the inner part of the reactor for explaining an installation structure of a conventional heater. Indicates.

반응로(21)는 석고 등의 절연재료로 원통형 형태로 형성되며, 반응로(21)의 내측면에 걸쳐 히터코일(22)가 나선형의 코일형상으로 권취되어 있는데, 반응로(21)의 내측면에는 히터코일(22)을 고정하기 위하여 하단부에서 상단부로 길게 돌출된 고정턱(23)이 내주면을 따라 다수 형성되어 있으며, 아울러 상기 고정턱(23)에는 히터코일(22)을 고정하기 위하여 수평방향으로 형성한 고정홈(24)이 수직방향을 따라 일정간격으로 다수 형성되어 있다.The reactor 21 is formed in a cylindrical shape with an insulating material such as gypsum, and the heater coil 22 is wound in a spiral coil shape over the inner surface of the reactor 21. A plurality of fixing jaws 23 protruding from the lower end to the upper end in order to fix the heater coil 22 is formed along the inner circumferential surface of the side, and the fixing jaw 23 is horizontal to fix the heater coil 22. A plurality of fixing grooves 24 formed in the direction are formed at regular intervals along the vertical direction.

그런데, 이와 같은 히터의 설치구조는 장시간 사용을 하다보면 내부 히터코일의 휨 현상으로 인해 상측에 위치한 히터코일과 그 직하방에 위치하는 하측 히터 코일이 접촉될 수 있고, 히터코일과 히터코일이 접촉되면 스파크가 발생되어 히터코일을 단선시킬 수 있다. 도 2의 A부는 히터코일과 히터코일의 접촉으로 오픈된 상태를 나타내는 부위이다.However, such a heater installation structure can be in contact with the heater coil located on the upper side and the lower heater coil located directly below it due to the bending phenomenon of the internal heater coil, and the heater coil and the heater coil contact If a spark is generated, the heater coil may be disconnected. A part of FIG. 2 is a part which shows the state opened by the contact of a heater coil and a heater coil.

이와 같은 히터코일의 단선사태가 공정진행중에 발생되면 공정이 중지되면서 웨이퍼에는 치명적인 결합을 일으켜 박막의 두께에 심각한 영향을 끼치게 되는 바, 보통 한번에 150매 정도의 웨이퍼가 공정 처리됨을 감안하면 150매의 웨이퍼 모두가 리젝트 처리가 불가피해져 생산수율이 떨어지는 문제점이 발생된다.
If the heater coil breakdown occurs during the process, the process will be stopped and cause a fatal bond to the wafer, which will seriously affect the thickness of the thin film. Considering that 150 wafers are processed at a time, 150 sheets are processed. Reject processing is inevitable for all wafers, resulting in a lower production yield.

본 발명은 상기한 사정을 감안하여 발명한 것으로, 히터를 구성하는 히터코일의 하단에 받침턱을 설치하여 히터를 장시간 사용하여도 히터코일의 휨 현상이 방지되도록 함으로써, 히터의 수명을 증진시키고 히터단선에 따른 공정사고를 최소화 할 수 있도록 된 확산공정용 가열로 히터의 변형방지장치를 제공하고자 함에 발명의 목적이 있다.
The present invention has been invented in view of the above circumstances, and by installing a support jaw at the lower end of the heater coil constituting the heater to prevent bending of the heater coil even when the heater is used for a long time, the life of the heater is improved and the heater An object of the present invention is to provide a deformation preventing apparatus of a heater for a diffusion process heating apparatus capable of minimizing a process accident due to disconnection.

상기한 목적을 실현하기 위한 본 발명의 확산공정용 가열로 히터의 변형방지장치는, 확산공정을 수행할 반도체 기판이 반출입되는 원통형 반응로에, 그 반응로를 소정의 반응온도로 상승시키기 위하여 반응로의 내주면을 둘러싸도록 히터코일이 설치되되, 상기 반응로의 내주면에서 종방향으로 길게 돌출되어 형성되고 횡방 향으로 관통된 다수의 히터코일 고정홈이 구비된 고정턱이 다수 형성되어 있는 확산공정용 가열로 히터의 변형방지장치에 있어서, 상기 나선형으로 설치되는 히터코일의 하부를 따라 히터코일을 지지하는 절연턱이 반응로 내주면에 걸쳐 돌출형되어, 상부피치 히터코일과 하부피치 히터코일을 격리시키도록 이루어진 구조로 되어 있다.In order to achieve the above object, the apparatus for preventing deformation of a heater for a diffusion process heater according to the present invention is a cylindrical reactor in which a semiconductor substrate to be subjected to a diffusion process is carried in and out so as to raise the reactor to a predetermined reaction temperature. Heater coil is installed so as to surround the inner circumferential surface of the furnace, the diffusion process for forming a plurality of fixing jaw with a plurality of heater coil fixing grooves are formed to protrude in the longitudinal direction from the inner circumferential surface of the reactor and penetrated in the lateral direction In the apparatus for preventing deformation of a heater, an insulation jaw supporting the heater coil is protruded over the inner circumferential surface of the reactor along the lower portion of the spirally installed heater coil to isolate the upper pitch heater coil and the lower pitch heater coil. It is made of a structure.

상기에 있어서, 상기 절연턱은 석고재질로 형성된 것을 특징으로 한다.
In the above, the insulating jaw is characterized in that formed of gypsum material.

이하 본 발명의 바람직한 일실시예에 대한 구성 및 작용을 예시도면에 의거하여 상세히 설명한다.Hereinafter, the configuration and operation of the preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings.

도 3은 본 발명에 따른 히터의 설치구조를 설명하기 위한 반응로내측부 요부 사시도를 나타낸다.Figure 3 shows a perspective view of the main portion inside the reactor for explaining the installation structure of the heater according to the present invention.

첨부도면에 있어 도 2에 도시된 종래 히터설치구조에서의 구성요소와 동일한 기능을 수행하는 구성요소에 대하여는 동일한 참조부호를 부여하여 설명한다.In the accompanying drawings, components that perform the same functions as those in the conventional heater mounting structure shown in FIG. 2 will be described with the same reference numerals.

본 발명에 따른 히터코일(22)이 설치되는 반응로(21)는 석고 등의 단열 및 절연재료를 사용하여 원통형 형태로 형성된다.The reactor 21 in which the heater coil 22 according to the present invention is installed is formed in a cylindrical shape using a heat insulating and insulating material such as gypsum.

상기 반응로(21)의 내주면에는 히터코일(22)을 고정하기 위하여 하단부에서 상단부에 걸쳐 길게 돌출된 고정턱(23)이 내주면을 따라 다수 형성되어 있다. 이러한 고정턱(23)은 대략 등간격으로 내주면을 따라 원형으로 다수개 형성되고, 각 고정턱(23)에는 반응로(21)의 내주면이 이루는 원과 동심원을 이룰 수 있도록 수평방향으로 히터코일 고정홈(24)이 형성되어 있으며, 이러한 고정홈(24)이 고정턱 (23)의 하단부에서 상단부에 걸쳐 등간격으로 다수개 형성되어 있다. 그리하여 상기 반응로(21)의 내주면 전체에 걸쳐 상기 고정홈(24)을 통해 히터코일을 끼워고정하면 히터코일(22)이 나선형을 이루게 된다.On the inner circumferential surface of the reactor 21, a plurality of fixing jaws 23 protruding from the lower end to the upper end in order to fix the heater coil 22 are formed along the inner circumferential surface. The fixing jaw 23 is formed in a plurality of circular along the inner circumferential surface at substantially equal intervals, each of the fixing jaw 23 is fixed to the heater coil in the horizontal direction to form a concentric circle with the inner circumferential surface of the reactor 21 Grooves 24 are formed, and a plurality of such fixing grooves 24 are formed at equal intervals from the lower end of the fixing jaw 23 to the upper end. Thus, when the heater coil is fitted through the fixing groove 24 over the entire inner circumferential surface of the reactor 21, the heater coil 22 forms a spiral shape.

특히 본 발명에서는 히터코일(22)이 장시간 사용에 따라 아래로 휘어지는 것을 방지할 수 있도록 히터코일(22)의 하단부에 히터코일(22)을 지지하는 절연턱(50)을 형성하고 있다.In particular, in the present invention, the insulation jaw 50 for supporting the heater coil 22 is formed at the lower end of the heater coil 22 so as to prevent the heater coil 22 from being bent downward with long use.

이러한 절연턱(50)은 본 발명의 실시예에서는 내열성이며 절연성을 갖추고 있는 석고재질로 형성한 것이지만, 동일기능을 갖는 다른 재료를 사용하여 형성할 수 있음은 물론이다.
Although the insulating jaw 50 is formed of a gypsum material having heat resistance and insulation in an embodiment of the present invention, it can be formed using other materials having the same function.

도 4는 본 발명에 따른 히터코일 설치구조 요부단면도를 나타낸다.Figure 4 shows a cross-sectional view of the main portion of the heater coil installation structure according to the present invention.

반응로(21)의 내벽으로는 절연턱(50)이 반응로(21)내측으로 히터코일(22)보다 다소 더 돌출되게 형성되어 있으며, 절연턱(50)의 상하측으로는 상부피치의 히터코일과 하부피치의 히터코일이 각각 설치되어 있음을 나타낸다.The inner wall of the reactor 21 is formed with the insulation jaw 50 protrudes somewhat more than the heater coil 22 into the reactor 21, and the upper and lower heater coils of the upper pitch are formed in the upper and lower sides of the insulation jaw 50. Heater coils of and Pitch are installed respectively.

통상 확산공정에 사용되는 히터코일(22)의 직경이 4㎜ 정도이고 상부 히터코일과 하부 히터코일의 중심간 간격이 10㎜ 정도임을 감안하여 절연턱(50)의 두께는 3㎜로 형성하여 절연턱(50)과 히터코일(22)을 1.5㎜ 정도 이격시킴이 바람직하다. 이와 같이 절연턱(50)과 히터코일(22)간에 적정한 이격거리를 형성함으로써 히터코일(22)에서 배출되는 열이 반응로(21)내측으로 잘 방출될 수 있도록 한다.
Considering that the diameter of the heater coil 22 used in the diffusion process is about 4 mm and the interval between the centers of the upper heater coil and the lower heater coil is about 10 mm, the thickness of the insulation jaw 50 is formed to be 3 mm to insulate. Preferably, the jaw 50 and the heater coil 22 are spaced about 1.5 mm apart. As such, by forming an appropriate separation distance between the insulation jaw 50 and the heater coil 22, the heat discharged from the heater coil 22 may be well discharged into the reactor 21.

상기한 바와 같이 본 발명은 나선형으로 권취되어 있는 히터코일의 각 하단으로 석고재질의 절연턱을 형성함으로써 히터코일이 장시간 사용되어 아래로 휘어지더라도 절연턱에 의해 하부 히터코일로의 접촉이 차단됨으로써 히터코일의 단선을 방지할 수 있는 장점이 있다.
As described above, according to the present invention, the insulation jaw of the gypsum material is formed at each lower end of the heater coil wound spirally so that the contact to the lower heater coil is blocked by the insulation jaw even when the heater coil is bent for a long time. There is an advantage that can prevent the disconnection of the heater coil.

본 발명은 상기한 특정의 바람직한 실시예에 한정되지 아니하며, 청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변형 실시가 가능한 것은 물론이고, 그와 같은 변경은 청구범위 기재의 범위내에 있게 되는 것임은 자명하다.The present invention is not limited to the above-described specific preferred embodiments, and various modifications can be made by any person having ordinary skill in the art without departing from the gist of the present invention claimed in the claims. Of course, it is obvious that such changes will fall within the scope of the claims.

Claims (2)

확산공정을 수행할 반도체 기판이 반출입되는 원통형 반응로에, 그 반응로를 소정의 반응온도로 상승시키기 위하여 반응로의 내주면을 둘러싸도록 히터코일이 설치되되, 상기 반응로의 내주면에서 종방향으로 길게 돌출되어 형성되고 횡방향으로 관통된 다수의 히터코일 고정홈이 구비된 고정턱이 다수 형성되어 있는 확산공정용 가열로 히터의 변형방지장치에 있어서, 상기 나선형으로 설치되는 히터코일의 하부를 따라 히터코일을 지지하는 절연턱이 반응로 내주면에 걸쳐 돌출형되어, 상부피치 히터코일과 하부피치 히터코일을 격리시키도록 이루어진 확산공정용 가열로 히터의 변형방지장치.In the cylindrical reactor where the semiconductor substrate to be diffused is carried in and out, a heater coil is installed to surround the inner circumferential surface of the reactor in order to raise the reactor to a predetermined reaction temperature. In the apparatus for preventing deformation of a heater for a diffusion process furnace in which a plurality of fixing jaws having a plurality of heater coil fixing grooves protruding and penetrating in a transverse direction are formed, a heater along a lower portion of the spirally installed heater coil An insulation barrier for supporting the coil is protruded over the inner circumferential surface of the reactor, the deformation preventing device of the heater for the diffusion process heating is configured to isolate the upper pitch heater coil and the lower pitch heater coil. 제1항에 있어서, 상기 절연턱은 석고재질로 형성된 것을 특징으로 하는 확산공정용 가열로 히터의 변형방지장치.The apparatus of claim 1, wherein the insulation jaw is formed of a gypsum material.
KR1020040116965A 2004-12-30 2004-12-30 Deformation prevention device of heater for diffusion process heater Withdrawn KR20060078658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020040116965A KR20060078658A (en) 2004-12-30 2004-12-30 Deformation prevention device of heater for diffusion process heater

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040116965A KR20060078658A (en) 2004-12-30 2004-12-30 Deformation prevention device of heater for diffusion process heater

Publications (1)

Publication Number Publication Date
KR20060078658A true KR20060078658A (en) 2006-07-05

Family

ID=37170519

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020040116965A Withdrawn KR20060078658A (en) 2004-12-30 2004-12-30 Deformation prevention device of heater for diffusion process heater

Country Status (1)

Country Link
KR (1) KR20060078658A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101449090B1 (en) * 2010-08-10 2014-10-08 도쿄엘렉트론가부시키가이샤 Heater device and method for maintenance of heater device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101449090B1 (en) * 2010-08-10 2014-10-08 도쿄엘렉트론가부시키가이샤 Heater device and method for maintenance of heater device

Similar Documents

Publication Publication Date Title
US7974525B2 (en) Heat processing furnace and vertical-type heat processing apparatus
US11049742B2 (en) Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support
US8476560B2 (en) Thermal processing furnace
JP5049128B2 (en) SUBSTRATE PROCESSING APPARATUS, HEATING DEVICE USED FOR THE SAME, SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME, AND HEAT GENERATION HOLDING STRUCTURE
KR100290047B1 (en) Heat Treatment Boat
KR101569557B1 (en) Heat treatment furnace and heat treatment apparatus
KR100847367B1 (en) Apparatus and method for resistively heating a thermal processing system
JPH10233277A (en) Heat treatment device
US10036091B2 (en) Semiconductor manufacturing apparatus and manufacturing method of semiconductor device
KR100481609B1 (en) Apparatus and method for fabricating a semiconductor device
KR101652150B1 (en) Heater device and heat treatment apparatus
JP3241887B2 (en) Heat treatment equipment
KR20060078658A (en) Deformation prevention device of heater for diffusion process heater
JP2006100755A (en) Substrate processing apparatus, electric heater for substrate processing apparatus, and substrate processing apparatus provided with the same
JPH1167424A (en) Heater support device
KR102212998B1 (en) Apparatus for treating substrate
JP2005101215A (en) Heat treatment apparatus
JP2007073865A (en) Heat treatment equipment
JP4184724B2 (en) Heat treatment equipment
JPH08335575A (en) Heat treatment equipment and its method
JPH0669144A (en) Heat treatment furnace
KR20060035818A (en) Diffusion Furnace for Semiconductor Manufacturing
KR20040065814A (en) Apparatus for manufacturing semiconductor devices
CN112635311A (en) Gate oxide forming method of semiconductor device
JP2005093608A (en) Substrate processing equipment

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20041230

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid