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KR20060007372A - 실온에서 벌크 고체로부터 나노입자를 고속 발생시키는방법 - Google Patents

실온에서 벌크 고체로부터 나노입자를 고속 발생시키는방법 Download PDF

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KR20060007372A
KR20060007372A KR1020057016562A KR20057016562A KR20060007372A KR 20060007372 A KR20060007372 A KR 20060007372A KR 1020057016562 A KR1020057016562 A KR 1020057016562A KR 20057016562 A KR20057016562 A KR 20057016562A KR 20060007372 A KR20060007372 A KR 20060007372A
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nanoparticles
nanoparticle
semiconductor
metal
solution
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KR1020057016562A
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English (en)
Korean (ko)
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파르타 듀타
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렌슬러 폴리테크닉 인스티튜트
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Publication of KR20060007372A publication Critical patent/KR20060007372A/ko
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    • G11B5/712—Record carriers characterised by the selection of the material comprising one or more layers of magnetisable material homogeneously mixed with a bonding agent on a base layer characterised by the surface treatment or coating of magnetic particles
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KR1020057016562A 2003-03-06 2004-03-03 실온에서 벌크 고체로부터 나노입자를 고속 발생시키는방법 Ceased KR20060007372A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45204103P 2003-03-06 2003-03-06
US60/452,041 2003-03-06

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KR20060007372A true KR20060007372A (ko) 2006-01-24

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915989B1 (ko) * 2007-12-28 2009-09-10 아크로솔 주식회사 고효율 나노 형광체 제조방법

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7226966B2 (en) 2001-08-03 2007-06-05 Nanogram Corporation Structures incorporating polymer-inorganic particle blends
US20090075083A1 (en) 1997-07-21 2009-03-19 Nanogram Corporation Nanoparticle production and corresponding structures
US6599631B2 (en) 2001-01-26 2003-07-29 Nanogram Corporation Polymer-inorganic particle composites
US8568684B2 (en) 2000-10-17 2013-10-29 Nanogram Corporation Methods for synthesizing submicron doped silicon particles
US6906339B2 (en) 2001-09-05 2005-06-14 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
EP2233539B1 (fr) * 2003-08-25 2014-05-28 Dip Tech. Ltd. Encres pour surfaces ceramiques
KR20080017371A (ko) * 2005-05-14 2008-02-26 애트모스 (1998) 리미티드 반도체 재료 및 이의 생산 방법
WO2007016080A2 (fr) * 2005-07-26 2007-02-08 The Board Of Trustees Of The University Of Illinois Formation de nanoparticules de silicium a partir d'une poudre de silicium et d'acide hexacholorplatinique
JP4415972B2 (ja) 2005-09-22 2010-02-17 ソニー株式会社 金属酸化物ナノ粒子の製造方法
US7431867B2 (en) * 2006-01-27 2008-10-07 Konica Minolta Medical & Graphic, Inc. Nanosized semiconductor particles
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
CN100366532C (zh) * 2006-06-08 2008-02-06 复旦大学 一种硅/氧化硅核壳结构纳米复合材料及其制备方法和应用
US20080245769A1 (en) * 2006-07-17 2008-10-09 Applied Nanoworks, Inc. Nanoparticles and method of making thereof
US8632702B2 (en) 2007-01-03 2014-01-21 Nanogram Corporation Silicon/germanium particle inks, doped particles, printing and processes for semiconductor applications
DE102007030602A1 (de) * 2007-06-28 2009-01-02 Siemens Ag Bauteil mit einer keramischen Schicht, in die Partikel eingelagert sind, und Verfahren zu dessen Herstellung
FR2930937B1 (fr) * 2008-05-06 2010-08-20 Commissariat Energie Atomique Traitement de surface de nanoparticules de silicium
US8236192B2 (en) 2008-06-26 2012-08-07 Xerox Corporation Ferromagnetic nanoparticles with high magnetocrystalline anisotropy for MICR ink applications
US20100092363A1 (en) * 2008-09-15 2010-04-15 Graeve Olivia A Combustion synthesis method and materials produced therefrom
ITRM20080559A1 (it) * 2008-10-21 2010-04-22 Giancarlo Rabuffo Procedimento di decorazione di superfici con una stampante a getto di inchiostro.
EP2295508B1 (fr) * 2009-09-09 2013-07-17 Xerox Corporation Nanoparticules ferromagnétiques avec une anisotropie magnéto-cristalline pour les applications d'encre MICR
GB0919830D0 (en) * 2009-11-12 2009-12-30 Isis Innovation Preparation of silicon for fast generation of hydrogen through reaction with water
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
CN102441819B (zh) * 2011-10-20 2014-03-19 天津理工大学 一种用于硫系相变材料的化学机械抛光方法
WO2014052072A1 (fr) * 2012-09-26 2014-04-03 3M Innovative Properties Company Composition de revêtement, composition résistant aux salissures, articles résistant aux salissures et procédés pour les préparer
GB201217525D0 (en) 2012-10-01 2012-11-14 Isis Innovation Composition for hydrogen generation
JP6110105B2 (ja) * 2012-11-05 2017-04-05 ユニチカ株式会社 銀微粒子の製造方法
US9475695B2 (en) 2013-05-24 2016-10-25 Nanogram Corporation Printable inks with silicon/germanium based nanoparticles with high viscosity alcohol solvents
HUE068327T2 (hu) * 2013-07-10 2024-12-28 Umicore Nv Szilícium alapú por és az azt tartalmazó elektróda
WO2015050560A1 (fr) 2013-10-04 2015-04-09 3M Innovative Properties Company Composition applicable, composition antistatique, articles antistatiques et leurs procédés de fabrication
US20160244547A1 (en) * 2013-10-10 2016-08-25 New York University Efficient collection of nanoparticles
WO2015195650A1 (fr) * 2014-06-16 2015-12-23 Kansas State University Research Foundation Transformation directe de matériaux en masse en nanoparticules
CN105436507A (zh) * 2015-11-15 2016-03-30 丹阳市德源精密工具有限公司 一种金刚石锯片的制备方法
TWI611599B (zh) * 2016-10-27 2018-01-11 友達光電股份有限公司 過渡載板裝置、顯示面板以及兩者的製造方法、微型發光件的檢測方法
CN112604781A (zh) * 2020-11-26 2021-04-06 湖南新威凌新材料有限公司 一种超细研磨装置及其球料分离器
KR102680308B1 (ko) * 2021-12-30 2024-07-01 오씨아이 주식회사 이차전지 음극 활물질용 실리콘 나노 입자 및 이의 제조 방법

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2850108A1 (de) * 1978-11-18 1980-06-04 Dornier System Gmbh Hartferritpulver und verfahren zu seiner herstellung
US4484992A (en) * 1981-02-04 1984-11-27 Ciba-Geigy Corporation Process for the production of hydrogen by means of heterogeneous photoredox catalysis
US4438078A (en) * 1982-12-20 1984-03-20 Allied Corporation Recovery of gadolinium and gallium oxides
US4672169A (en) * 1985-03-21 1987-06-09 Standard Oil Company (Indiana) Apparatus and method for heating materials with a laser heat source
US5141904A (en) * 1991-02-15 1992-08-25 Phillips Petroleum Company Reactivation of spent cracking catalysts
US5262357A (en) * 1991-11-22 1993-11-16 The Regents Of The University Of California Low temperature thin films formed from nanocrystal precursors
JPH07502479A (ja) * 1991-11-22 1995-03-16 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 自己集合性単一層を使って固体無機表面に共有結合した半導体微少結晶
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US6048616A (en) * 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
US5411654A (en) * 1993-07-02 1995-05-02 Massachusetts Institute Of Technology Method of maximizing anharmonic oscillations in deuterated alloys
DE4327063A1 (de) * 1993-08-12 1995-02-16 Kirsten Dr Westesen Ubidecarenon-Partikel mit modifizierten physikochemischen Eigenschaften
US5705321A (en) * 1993-09-30 1998-01-06 The University Of New Mexico Method for manufacture of quantum sized periodic structures in Si materials
GB9323498D0 (en) * 1993-11-15 1994-01-05 Isis Innovation Making particles of uniform size
US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US5434878A (en) * 1994-03-18 1995-07-18 Brown University Research Foundation Optical gain medium having doped nanocrystals of semiconductors and also optical scatterers
US5576248A (en) * 1994-03-24 1996-11-19 Starfire Electronic Development & Marketing, Ltd. Group IV semiconductor thin films formed at low temperature using nanocrystal precursors
US5537000A (en) * 1994-04-29 1996-07-16 The Regents, University Of California Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
US5718388A (en) * 1994-05-25 1998-02-17 Eastman Kodak Continuous method of grinding pharmaceutical substances
US5614435A (en) * 1994-10-27 1997-03-25 The Regents Of The University Of California Quantum dot fabrication process using strained epitaxial growth
US5704556A (en) * 1995-06-07 1998-01-06 Mclaughlin; John R. Process for rapid production of colloidal particles
US5690807A (en) * 1995-08-03 1997-11-25 Massachusetts Institute Of Technology Method for producing semiconductor particles
US6022500A (en) * 1995-09-27 2000-02-08 The United States Of America As Represented By The Secretary Of The Army Polymer encapsulation and polymer microsphere composites
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
EP0792688A1 (fr) * 1996-03-01 1997-09-03 Dow Corning Corporation Nanoparticules d'alliages à l'oxyde de silicium
AU2579297A (en) * 1996-03-26 1997-10-17 Samsung Electronics Co., Ltd. Tunnelling device and method of producing a tunnelling device
US6057561A (en) * 1997-03-07 2000-05-02 Japan Science And Technology Corporation Optical semiconductor element
US6106609A (en) * 1997-04-08 2000-08-22 The United States Of America As Represented By The Secretary Of The Navy Formation of nanocrystalline semiconductor particles within a bicontinuous cubic phase
US6361660B1 (en) * 1997-07-31 2002-03-26 Avery N. Goldstein Photoelectrochemical device containing a quantum confined group IV semiconductor nanoparticle
JP3727449B2 (ja) * 1997-09-30 2005-12-14 シャープ株式会社 半導体ナノ結晶の製造方法
US6268014B1 (en) * 1997-10-02 2001-07-31 Chris Eberspacher Method for forming solar cell materials from particulars
US6322901B1 (en) * 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US5985173A (en) * 1997-11-18 1999-11-16 Gray; Henry F. Phosphors having a semiconductor host surrounded by a shell
US5990479A (en) * 1997-11-25 1999-11-23 Regents Of The University Of California Organo Luminescent semiconductor nanocrystal probes for biological applications and process for making and using such probes
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
EP0947245B1 (fr) * 1998-02-05 2004-04-07 Motorola Semiconducteurs S.A. Procédé de fabrication de colloides contenant un métal et procédé de fabrication d'une couche sensible pour un dispositif capteur chimique
CA2268997C (fr) * 1998-05-05 2005-03-22 National Research Council Of Canada Photodetecteur infrarouge aux points quantiques (qdip) et methodes de fabrication de ce photodetecteur
US6294401B1 (en) * 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
US6251303B1 (en) * 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
US6271130B1 (en) * 1998-11-25 2001-08-07 The University Of Chicago Semiconductor assisted metal deposition for nanolithography applications
EP1129496A2 (fr) * 1998-10-09 2001-09-05 The Trustees of Columbia University in the City of New York Dispositif photoelectrique solide
US6705152B2 (en) * 2000-10-24 2004-03-16 Nanoproducts Corporation Nanostructured ceramic platform for micromachined devices and device arrays
US6114038A (en) * 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
WO2000028598A1 (fr) * 1998-11-10 2000-05-18 Biocrystal Limited Procedes d'identification et de verification
US6449645B1 (en) * 1999-01-19 2002-09-10 Kenneth L. Nash System for monitoring the association of digitized information having identification indicia with more than one of uniquely identified computers in a network for illegal use detection
US6436305B1 (en) * 1999-01-21 2002-08-20 Midwest Research Institute Passivating etchants for metallic particles
US6235540B1 (en) * 1999-03-30 2001-05-22 Coulter International Corp. Semiconductor nanoparticles for analysis of blood cell populations and methods of making same
US6544732B1 (en) * 1999-05-20 2003-04-08 Illumina, Inc. Encoding and decoding of array sensors utilizing nanocrystals
US6514767B1 (en) * 1999-10-06 2003-02-04 Surromed, Inc. Surface enhanced spectroscopy-active composite nanoparticles
US6585947B1 (en) * 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
US6225198B1 (en) * 2000-02-04 2001-05-01 The Regents Of The University Of California Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process
US6329062B1 (en) * 2000-02-29 2001-12-11 Novellus Systems, Inc. Dielectric layer including silicalite crystals and binder and method for producing same for microelectronic circuits
WO2002003472A2 (fr) * 2000-06-29 2002-01-10 California Institute Of Technology Nanoparticules de silicium d'aerosol destinees a la fabrication de dispositifs a semi-conducteurs
GB0016844D0 (en) * 2000-07-10 2000-08-30 Council Cent Lab Res Councils Nanoparticles
AUPQ975900A0 (en) * 2000-08-30 2000-09-21 Unisearch Limited A process for the fabrication of a quantum computer
US6649138B2 (en) * 2000-10-13 2003-11-18 Quantum Dot Corporation Surface-modified semiconductive and metallic nanoparticles having enhanced dispersibility in aqueous media
US6777449B2 (en) * 2000-12-21 2004-08-17 Case Logic, Inc. Method of making and using nanoscale metal
US6410934B1 (en) * 2001-02-09 2002-06-25 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle electronic switches
US6372644B1 (en) * 2001-02-22 2002-04-16 Advanced Micro Devices, Inc. Hydrogen passivated silicon nitride spacers for reduced nickel silicide bridging
US6780499B2 (en) * 2001-05-03 2004-08-24 International Business Machines Corporation Ordered two-phase dielectric film, and semiconductor device containing the same
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
ATE556845T1 (de) * 2001-07-20 2012-05-15 Life Technologies Corp Lumineszierende nanopartikel und ihre herstellung
US6906339B2 (en) * 2001-09-05 2005-06-14 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
GB2383534A (en) * 2001-12-28 2003-07-02 Psimei Pharmaceuticals Plc Delivery of neutron capture elements for neutron capture therapy
US20030158028A1 (en) * 2002-02-15 2003-08-21 Dominic Loiacono Solarization resistant materials having reduced ultraviolet absorption for use in fabrication of optical elements
AU2003209238A1 (en) * 2002-04-09 2003-10-27 The Government Of The United States Of America As Represented By The Secretary Of The Navy Magnetic nanoparticles having passivated metallic cores
JP4230741B2 (ja) * 2002-08-30 2009-02-25 日立ソフトウエアエンジニアリング株式会社 半導体ナノ粒子の精製方法
US7227066B1 (en) * 2004-04-21 2007-06-05 Nanosolar, Inc. Polycrystalline optoelectronic devices based on templating technique
EP1905064A2 (fr) * 2005-06-24 2008-04-02 Applied Nanoworks, Inc. Nanoparticules et procede de fabrication
US7431867B2 (en) * 2006-01-27 2008-10-07 Konica Minolta Medical & Graphic, Inc. Nanosized semiconductor particles
US7892520B2 (en) * 2006-07-31 2011-02-22 The Hong Kong University Of Science And Technology Solid-state synthesis of iron oxide nanoparticles

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915989B1 (ko) * 2007-12-28 2009-09-10 아크로솔 주식회사 고효율 나노 형광체 제조방법

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