KR20050003630A - flat mask manufacturing method and the use of it's micro patterning mathod fot a flat display panel - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a flat mask and a method of forming a fine pattern of a flat panel display panel using the same. There is an advantage to increase the processing precision of the fine pattern.

Description

Flat mask manufacturing method and the use of it's micro patterning mathod fot a flat display panel}

The present invention relates to a method of manufacturing a flat mask and a method of forming a fine pattern of a substrate for a flat panel display panel using the same, and in particular, to form a flat mask directly on a substrate of a flat panel display panel using X-ray exposure. The present invention relates to a method of manufacturing a flat mask capable of increasing processing accuracy of a substrate and a method of forming a fine pattern of a substrate for a flat panel display panel using the same.

Recently, image display devices have become large and high definition, and demand for various flat panel devices (FPD) such as liquid crystal display (LCD), plasma display panel (PDP), etc. Soaring.

As described above, in order to form a pattern on a substrate, the flat panel display panel may be subjected to various processes such as photoresist coating, exposure, development, chemical etching, and the like, resulting in poor productivity and yield.

Therefore, in recent years, as the flat panel display panel has a large area and high definition, more precise processing is required, and thus, a semiconductor manufacturing process is used. Among them, a lot of LIGA (Lithographie, Galvanoformung, Abformung) processes are used to manufacture microstructures. It is becoming.

Here, LIGA is a technique for batch processing ultra-small, ultra-precision molds and three-dimensional structures using high-energy X-rays having a short wavelength of several orders of magnitude, and X-rays forming resist molds using X-rays It consists of a photolithography process, a electroplating process for plating metal into a resist frame, and an injection molding process for producing plastic products using molds.

At this time, the most important part of the LIGA technology is a technique for manufacturing an X-ray exposure mask that is used during X-ray exposure to form a precise pattern on the substrate, such a mask transmits the X-ray as shown in FIG. The membrane (Membrane: 2) formed of a thin film processed with a material such as SiN, Ti, Carbon, BN, and the lower side of the membrane (2) to support the window (window: w) is formed in the center It consists of a supporter 4 and an absorber 6 attached to the center of the upper surface of the membrane 4 to absorb X-rays.

However, in the mask according to the related art, the thickness of the membrane 2 is usually only a few μm because the membrane 2 is formed by a semiconductor thin film deposition process, while the absorber 6 has a thickness of several tens of μm. When the window w is largely formed in (4), the membrane 2 is bent or sag due to the stress and the weight of the absorber 6.

Therefore, when the X-ray exposure process is performed using such a mask, the mask is not only diffracted or scattered by the X-ray, but also difficult to be installed in close contact with the substrate or to maintain a predetermined distance. It is difficult to form the pattern, and there is a problem that can not be applied to form a pattern on a large-area substrate.

The present invention has been made to solve the above-mentioned problems of the prior art, a method of manufacturing a flat mask that can form a more precise pattern on the substrate by integrally forming a mask on the substrate and the fine of the flat panel display panel substrate using the same The purpose is to provide a pattern forming method.

1 is a cross-sectional view showing a typical mask for X-ray exposure,

2 is a flowchart illustrating a method for forming a fine pattern of a substrate for a flat panel display panel according to the present invention;

3 is a process diagram showing a method for manufacturing a mask for X-ray exposure according to the present invention;

4 is a process diagram showing a planar mask manufacturing method according to the present invention;

5 is a process diagram illustrating a method for forming a fine pattern of a substrate for a flat panel display panel according to the present invention.

<Explanation of symbols on main parts of the drawings>

10: mask for X-ray exposure 22: substrate

24: first photoresist 25: planar mask

26 second photoresist 28 absorber

L: seed layer

According to an aspect of the present invention, there is provided a method of manufacturing a planar mask, in which a first photoresist and a second photoresist are sequentially stacked on a substrate, and a second photoresist stacked in the first step is Between a second step of partially X-ray exposure by an X-ray exposure mask, a third step of forming a partition by developing a second photoresist exposed in the second step, and a partition formed in the third step The fourth step is to fill the absorber absorbing the X-ray.

In addition, the method for forming a fine pattern of a substrate for a flat panel display panel according to the present invention includes a first step of sequentially stacking a first photoresist and a second photoresist on a substrate, and a second photoresist stacked in the first step. Between a second step of partially X-ray exposure by an X-ray exposure mask, a third step of forming a partition by developing a second photoresist exposed in the second step, and a partition formed in the third step After the absorber absorbs the X-ray is filled in, the fourth step of exposing the first photoresist partially exposed by X-ray exposure, and the partition and the absorber are removed after the first photoresist exposure in the fourth step And a fifth step in which the first photoresist is developed after the second photoresist is removed in the fifth step to form a pattern.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a flowchart illustrating a method for forming a micropattern of a substrate for a flat panel display panel according to the present invention, FIG. 3 is a process diagram illustrating a method for manufacturing a mask for X-ray exposure according to the present invention, and FIG. 4 according to the present invention. A method of manufacturing a flat mask and a method of forming a fine pattern of a substrate for a flat panel display panel are illustrated in the drawing.

The method of forming a micropattern of the substrate for a flat panel display panel according to the present invention is mainly used in manufacturing a light guide plate which is disposed on a rear surface of a panel in which a liquid crystal is injected in a liquid crystal display (LCD) and injects ambient light or fluorescent light toward the panel. The light guide plate is formed with a fine pattern on the surface of the ambient light or fluorescence to make a uniform plane light, the fine pattern is formed according to the method for forming a fine pattern of the substrate for a flat panel display panel of the present invention.

Herein, referring to FIG. 2, a method of forming a micropattern of a substrate for a flat panel display panel according to the present invention is first manufactured with a mask for X-ray exposure (see S1).

In this case, the mask for X-ray exposure is usually formed with a membrane of an SiN film and an X-ray absorber in a window region of a silicon substrate.

Next, photoresists of different polarities are applied to the substrate (see S2).

In general, photoresists are classified into positive photo resists (negative PR) and negative photo resists (negative PR). On the other hand, the negative PR has no unexposed portions through the exposure and development processes.

Of course, positive PR and negative PR are sequentially applied to the substrate.

Next, a planar mask is manufactured using a substrate on which photoresists of different polarities are shown as described above and a mask for X-ray exposure (see S3).

Here, the substrate is subjected to X-ray exposure and development by the mask for X-ray exposure to form a constant partition on the negative PR, and an absorber for absorbing X-rays is applied between the partitions.

In this case, the planar mask is formed of the partition wall and the absorber, and the planar mask is integrally formed on an upper surface of the substrate to which the positive PR is applied.

Next, a fine pattern is formed on the substrate using the planar mask fabricated as described above (see S4).

Here, the substrate and the positive PR are X-ray exposed through a planar mask integrally formed on the upper surface, and when the substrate is developed after removing the planar mask, a pattern having a precise shape and size is formed on the upper surface of the substrate. .

In order to form a fine pattern on the substrate for a flat panel display panel as described above, an X-ray exposure mask is first manufactured, and the planar mask is manufactured by the X-ray exposure mask, and the fine pattern is formed on the substrate by the plane mask. It will be formed, looking at such a manufacturing process in more detail as follows.

First, referring to FIG. 3, a method of manufacturing the X-ray exposure mask will be described. As shown in (a), a thin film type membrane 14a of SiN is formed on and under the silicon plate 12. 14b) is deposited.

Next, as shown in (b), a seed layer (L) and a photoresist 16a are applied to the upper membrane 14a of the plate, and ultraviolet rays are irradiated to the photoresist 16a. The pattern is partially formed in the photoresist 16a while undergoing a UV photolithography process.

Next, as shown in (c), as the pattern is formed on the photoresist 16a, the absorber 18 absorbing the X-ray is filled in the portion where the seed layer L is exposed in the photoresist 16a. The photoresist is removed.

Next, as shown in (d), the seed layer L and the photoresist 16b are applied to the lower membrane 14b of the plate, and the UV photo is developed after the ultraviolet ray is irradiated onto the photoresist 16b. Through the etching process, the back side membrane 14b of the plate is exposed to the photoresist 16b.

Next, as shown in (e), the back side membrane 14b of the plate is removed while undergoing a reactive ion etching (RIE) process, and the back side of the plate 12 is exposed.

Next, as shown in (f), the back side photoresist 16b of the plate 12 is removed and a silicon bulk etching process is performed in a potassium hydroxide (KOH) solution. The silicon is completely removed in the back side window w region of the X-ray exposure mask.

In addition, referring to FIG. 4, the method of manufacturing the planar mask is sequentially stacked with photoresists of different polarities on the upper surface of the substrate 22 as illustrated in (a).

The seed layer L, the first photoresist 24, the seed layer L, and the second photoresist 26 may be sequentially applied to the upper surface of the substrate 22, and the first and second photoresist may be applied. 24 and 26 have different polarities, and the first and second photoresists 24 and 26 are positive PR and negative PR, respectively.

In general, the photoresist changes its properties depending on the intensity of light irradiated, the greater the intensity of light that changes the properties of the photoresist, the lower the sensitivity, the sensitivity of the grape resist varies depending on the type.

In particular, while the positive PR has a variety of sensitivity depending on the kind, the negative PR has a similar sensitivity according to the kind, the first photoresist 24 is a positive PR having a certain sensitivity higher than the second photoresist 26 by a certain value or more. Is set.

Next, as shown in (b), the second photoresist 26 laminated on the substrate 22 is partially X-ray exposed by the X-ray exposure mask.

Here, a part of the X-ray irradiated toward the mask for X-ray exposure is absorbed, and the second photoresist 26 is partially exposed as the rest passes through and irradiates the second photoresist 26. The nature will change.

Next, as shown in (c), the partially exposed second photoresist 26 is developed to form a partition 26a.

In this case, since the second photoresist 26 is negative PR, when the development is performed, a portion irradiated with X-rays is left, so that a portion where X-rays are exposed on the upper surface of the first photoresist 24 is partially partitioned. 26a is formed.

Next, an absorber 28 that absorbs the X-rays is filled between the partitions 26a formed as shown in (d).

At this time, the absorber 28 is mainly used in gold (Au).

That is, the first photoresist 24 is coated on the top surface of the substrate 22 to form a desired pattern as described above, and the absorber 28 and the partition wall 26a are formed on the top surface of the first photoresist 24. The planar mask 25 which consists of is formed integrally.

Finally, referring to FIG. 5, a method of forming a micropattern of the display panel substrate is a planar mask integrally formed with the first photoresist 24 applied to the substrate 22 as shown in (a). The first photoresist 24 is partially exposed by X-ray exposure with 25 attached thereto.

Here, since the planar mask 25 is composed of the absorber 28 and the partition wall 26a, part of the X-ray irradiated toward the planar mask 25 is absorbed by the absorber 28, and the rest is The first photoresist 24 partially irradiated through the partition 26a and irradiated with X-rays is partially changed in properties.

Next, as shown in (b), the planar mask 25, that is, the absorber 28 and the partition 26a are removed.

Next, as shown in (c), the partially exposed first photoresist 24 is developed to form a pattern having a fine shape and size on the substrate 22.

At this time, since the first photoresist 24 is positive PR, when the development is performed, the portion irradiated with X-ray is removed, and thus, the portion not irradiated with X-ray remains on the upper surface of the first photoresist 24 to form a pattern. Done.

The method of manufacturing a flat mask as described above and a method of forming a micropattern of a substrate for a flat panel display panel using the same are not limited to simply forming a micropattern on a light guide plate for a flat panel display panel, and forming a micropattern on a substrate of an image display apparatus. All of them are applicable.

The method of manufacturing a flat mask according to the present invention and the method of forming a fine pattern of a substrate for a flat panel display panel using the same according to the present invention are configured as described above by applying a photoresist having different polarities to a substrate using an X-ray exposure mask. Since it can be formed integrally, not only can be applied to a large-area substrate, but also a more precise pattern can be formed on the substrate, so that the image display apparatus can be made larger and have higher definition.

Claims (10)

A first step of sequentially stacking a first photoresist and a second photoresist on a substrate; A second step of partially X-ray exposing the second photoresist laminated in the first step by using an X-ray exposure mask; A third step in which the second photoresist exposed in the second step is developed to form a partition wall; And a fourth step in which an absorber for absorbing X-rays is filled between the partition walls formed in the third step. The method of claim 1, The first photoresist and the second photoresist in the first step is a manufacturing method of the planar mask, characterized in that the photoresist of different polarity. The method of claim 2, The first and second photoresist in the first step is a method of manufacturing a planar mask, characterized in that the positive photoresist and negative photoresist, respectively. The method of claim 2, And in the first step, the first photoresist is set to have a higher sensitivity than the second photoresist by a predetermined value or more. The method of claim 1, In the fourth step, the absorber is a manufacturing method of a flat mask, characterized in that the gold (Au). A first step of sequentially stacking a first photoresist and a second photoresist on a substrate; A second step of partially X-ray exposing the second photoresist laminated in the first step by using an X-ray exposure mask; A third step in which the second photoresist exposed in the second step is developed to form a partition wall; A fourth step of partially filling the first photoresist by exposing the absorber to absorb the X-rays between the partition walls formed in the third step and exposing the X-rays; A fifth step of removing the barrier rib and the absorber after the first photoresist exposure in the fourth step; And a sixth step in which the first photoresist is developed to form a pattern after the second photoresist is removed in the fifth step. The method of claim 6, The method of claim 1, wherein the first photoresist and the second photoresist are photoresists having different polarities. The method of claim 7, wherein The first and second photoresist in the first step is a fine pattern forming method for a flat panel display panel, characterized in that each of the positive photoresist and negative photoresist. The method of claim 7, wherein And in the first step, the first photoresist is set to have a higher sensitivity than the second photoresist by a predetermined value or more. The method of claim 6, The method of claim 4, wherein the absorber is gold (Au).