KR20030070930A - Apparatus for stripping photoresist and method for fabricating using the same - Google Patents

Abstract

A photoresist stripping device and a method of manufacturing a liquid crystal display device using the same are disclosed. The mixture of ozone and pure water is removed to remove the photoresist thin film serving as a protective film to prevent contamination of the already patterned area by the photoresist thin film. As a result, the contact resistance of the patterned thin film may be prevented from increasing, and an expensive photoresist thin film chemical may not be additionally used, and a cleaning process is not required, thereby reducing manufacturing time.

Description

Photoresist stripping apparatus and manufacturing method of liquid crystal display device using the same {APPARATUS FOR STRIPPING PHOTORESIST AND METHOD FOR FABRICATING USING THE SAME}

The present invention relates to a photoresist stripping device and a method of manufacturing a liquid crystal display device using the same, and more particularly, to a photoresist stripping device and a liquid crystal display device using the same, which can minimize contamination generated during the photoresist stripping process. It relates to a manufacturing method.

In today's information society, the role of electronic display devices becomes more and more important, and various electronic display devices are widely used in various industrial fields.

In general, an electronic display device refers to a device that transmits various information to a human through vision. In other words, an electronic display device may be defined as an electronic device that converts electrical information signals output from various electronic devices into optical information signals that can be recognized by human eyes, and serves as a bridge that connects humans and electronic devices. It may be defined as.

In such an electronic display device, when an optical information signal is displayed by a light emitting phenomenon, it is called an emissive display device, and when a light modulation is displayed by reflection, scattering, or interference phenomenon, a light receiving display ( It is called a non-emissive display device. The light emitting display device, also called an active display device, includes a cathode ray tube (CRT), a plasma display panel (PDP), a light emitting diode (LED), and an electroluminescent display (electroluminescent display). display; ELD). The light receiving display device, which is a passive display device, includes a liquid crystal display (LCD), an electrochemical display (ECD), an electrophoretic image display (EPID), and the like.

Cathode ray tubes (CRTs) used in image display devices such as televisions and computer monitors occupy the highest share in terms of display quality and economy, but have many disadvantages such as heavy weight, large volume and high power consumption. .

However, due to the rapid progress of semiconductor technology, the electronic display device suitable for the new environment, that is, the thin and light, the low driving voltage and the low power consumption of the electronic device, according to the miniaturization, low voltage and low power of various electronic devices, and the miniaturization and light weight of the electronic device, The demand for flat panel display devices with features is rapidly increasing.

Among the various flat panel display devices currently developed, liquid crystal displays are thinner and lighter than other display devices, have low power consumption and low driving voltage, and are widely used in various electronic devices because they can display images close to cathode ray tubes. Is being used.

While such a liquid crystal display device has various advantages, it also has a problem of performing a complicated and precise manufacturing process.

Referring to FIG. 1, in order to manufacture a liquid crystal display, first, a TFT substrate and a color filter substrate are manufactured separately (step 1).

Thereafter, a step of assembling the separately manufactured TFT substrate and the color filter substrate is performed (step 2).

Subsequently, a liquid crystal is injected between the assembled TFT substrate and the color filter substrate and then sealed to produce a liquid crystal display panel (step 3).

Thereafter, the driving module is assembled to the liquid crystal display panel injected up to the liquid crystal, thereby manufacturing a liquid crystal display (step 4).

On the other hand, step 1 is produced again in the order of FIG.

Specifically, FIG. 2 is a flowchart illustrating a procedure of manufacturing a TFT substrate. Referring to FIG. 2, first, a very fine thin film transistor is formed in a matrix form on a glass substrate according to a thin film manufacturing process. At this time, a signal line for operating the thin film transistor is also formed in the process of manufacturing each thin film transistor (step 1a).

In the state where the thin film transistor is formed on the glass substrate as described above, an organic insulating film is formed on the glass substrate, and a contact hole is formed on the organic insulating film so that the drain electrode of the thin film transistor is exposed. In this case, the contact hole is performed by the patterned photoresist thin film (step 1b).

Thereafter, the photoresist thin film covered on the upper surface of the organic insulating film (1) with the contact hole formed in the organic insulating film is stripped by the wet chemical (step 1c).

At this time, the cleaning is performed as contamination occurs in the contact hole in the process of performing step 1c (step 1d).

Thereafter, an electrode is formed in the drain electrode of the thin film transistor through the contact hole (step 1e). In this case, the electrode may be made of a transparent conductive material or a metal material having a high reflectance.

Thereafter, an alignment film is formed over the entire surface of the glass substrate, and an alignment groove is formed in the alignment film (step 1f).

3 is a flowchart showing the procedure of manufacturing a color filter substrate, first, a black matrix is produced on a glass substrate (step 1g). At this time, the black matrix is formed at a portion corresponding to the electrode and the electrode of the TFT substrate described above.

On the other hand, a color pixel is produced to face the electrode in the state where the black matrix is formed (step 1h).

Subsequently, a common electrode is formed on the upper surface of the glass substrate so that all of the color pixels are covered (step 1i).

Subsequently, an alignment film is formed on the upper surface of the common electrode, and an alignment groove is further formed on the alignment film (step 1j).

At this time, the step of manufacturing the thin film transistor, the step of manufacturing the contact hole in the organic insulating film, the step of forming the electrode should all use the photoresist as a protective film, the protective film used should be removed.

In this case, when the photoresist is removed by a wet chemical, impurities may be stacked or contaminated in a place where the photoresist is already patterned in the process of removing the photoresist.

Where the impurities are stacked, the contact resistance causes a very big problem. This problem has the biggest problem, especially in the contact holes formed in the drain electrode.

This is because the power supplied to the drain electrode of the thin film transistor is increased in contact resistance due to impurities and contaminated portions, and thus, the power designated as the electrode cannot be applied.

This problem results in a fatal adverse effect on the display characteristics of the liquid crystal display device.

Accordingly, the present invention has been made in view of such a conventional problem, and a first object of the present invention is to provide a photoresist stripping apparatus that prevents the already patterned thin film from being contaminated in the process of removing the photoresist.

In addition, a second object of the present invention is to provide a method for manufacturing a liquid crystal display device in which a display defect does not occur by minimizing contact resistance between the thin film and the thin film when the liquid crystal display device is manufactured by the thin film manufacturing process.

1 is a flowchart illustrating a manufacturing process of a liquid crystal display device according to the prior art.

2 is a flowchart illustrating a process of manufacturing a TFT substrate of a liquid crystal display device according to the prior art.

3 is a flowchart illustrating a process of manufacturing a color filter substrate of a liquid crystal display device according to the prior art.

4 is a flowchart illustrating a manufacturing process of a liquid crystal display according to an exemplary embodiment of the present invention.

5A is a flowchart illustrating a process of manufacturing a TFT substrate of a liquid crystal display according to an embodiment of the present invention.

5B is a flowchart illustrating a process of manufacturing a color filter substrate according to an embodiment of the present invention.

6 is a process diagram illustrating the formation of a blocking thin film on a glass substrate according to an embodiment of the present invention.

7 is a flowchart illustrating a gate thin film layer formed on an upper surface of a blocking thin film according to an embodiment of the present invention.

8 is a flowchart illustrating a gate electrode formed on an upper surface of a blocking thin film according to an exemplary embodiment of the present invention.

FIG. 9 is a process diagram illustrating the completion of a thin film transistor on an upper surface of a blocking thin film according to an embodiment of the present invention.

10 is a flowchart illustrating an organic insulating layer formed on an upper surface of a glass substrate according to one embodiment of the present invention.

FIG. 11 is a process diagram illustrating that a photoresist thin film is patterned on an organic insulating film according to an embodiment of the present invention. FIG.

12 is a conceptual diagram of a photoresist stripping apparatus according to an embodiment of the present invention.

FIG. 13 is a process chart showing that the photoresist thin film is removed by the photoresist stripping apparatus of FIG. 12.

Fig. 14 or Fig. 15 is an enlarged view showing a good top surface state of the drain electrode and the pad by the photoresist stripping apparatus.

16 is a longitudinal cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention.

17 is a conceptual diagram of a liquid crystal display according to an embodiment of the present invention.

18 is a graph comparing the present invention and the prior art.

19 to 23 are process diagrams illustrating a process of manufacturing a TFT substrate according to another embodiment of the present invention.

The photoresist stripping apparatus for realizing the object of the present invention includes an ozone supply device including a reaction chamber, an ozone generating unit for generating ozone, and an ozone supply unit for supplying ozone generated in the ozone generating unit to the reaction chamber, and stores pure water. A pure water supply unit including a pure water supply tank and a pure water supply unit for injecting pure water from the pure water supply tank into the reaction chamber, and a substrate transfer device for allowing the substrate on which the photoresist thin film to be removed passes through the reaction chamber. It is characterized by.

In addition, a method of manufacturing a liquid crystal display device for implementing the object of the present invention is to form a thin film transistor having a gate electrode, a source electrode, a drain electrode and an active pattern on the first substrate by using the first and second masks. (Ii) forming, using a third mask, an organic insulating film having a contact hole through the opening of the photoresist thin film patterned to expose the drain electrode on the first substrate, i) ozone photoresist formed on the upper surface of the organic insulating film And etching by stripping with a pure mixture, i) forming a pixel electrode using a fourth mask so that the photoresist contacts the drain electrode on the top surface of the stripped organic insulating layer, i) a pixel electrode formed on the first substrate; Forming a second substrate having opposing common electrodes and iii) forming a liquid crystal layer between the pixel electrode and the common electrode. Steps.

Hereinafter, a photoresist stripping apparatus and a method of manufacturing the same according to an embodiment of the present invention will be described with reference to the accompanying drawings.

First, FIG. 4 shows a photoresist stripping apparatus 100 according to an embodiment of the present invention.

Referring to FIG. 4, the photoresist stripping apparatus 100 is generally viewed as a reaction chamber 110, an ozone supply device 120, a pure water supply device 130, a substrate transfer device 140, and a control unit for controlling them. It consists of 150.

More specifically, the reaction chamber 110 provides a space suitable for the photoresist removal process. Reference numeral 112 is a substrate introduction gate through which the substrate is supplied, and reference numeral 114 is a substrate discharge gate through which the substrate subjected to the photoresist stripping process is discharged.

Ozone is injected into the internal space of the reaction chamber 110 having the above configuration through the ozone supply device 120.

In order to implement this, the ozone supply device 120 is composed of the ozone generator 122 and the ozone supply 125 again.

The ozone generator 122 generates ozone by various methods, and ozone generated by the ozone generator 122 is provided into the reaction chamber 110 through the ozone supply 125.

At this time, the ozone supply unit 125 is composed of an ozone supply pipe 124 and the ozone injection nozzle 123.

On the other hand, pure water is supplied to the reaction chamber 110 from the pure water supply device 130 again. At this time, the pure water supply device 130 is composed of a pure water storage unit 132 and a pure water supply unit 135 for supplying the pure water from the pure water storage tank 132 into the reaction chamber 110.

At this time, the pure water supply unit 135 is composed of a pure water supply pipe 134 and the pure water spray nozzle 133.

At this time, whether ozone is supplied from the ozone supply device 120 and whether pure water is supplied from the pure water supply device 130 is controlled by the control unit 150. Preferably, the control unit 150 supplies ozone to the reaction chamber 110 to change the inside of the reaction chamber 110 into an ozone atmosphere, and then supplies pure water to the inside of the reaction chamber 110 to remove the photoresist thin film. .

On the other hand, inside the reaction chamber 110 is further provided with a substrate transfer device 140 for transferring the substrate 300 at a predetermined speed.

The substrate transfer device 140 may use a substrate transfer roller 145 or a transfer belt provided with a plurality of substrate transfer devices from the substrate inlet gate 112 of the reaction chamber 110 to the substrate discharge gate 114.

The substrate transfer device 140 allows the substrate to remain in the reaction chamber for a time sufficient to completely remove the photoresist thin film formed on the substrate 300 and to be discharged to the substrate discharge gate 114.

Hereinafter, a method of manufacturing a liquid crystal display device will be described with reference to the accompanying drawings with reference to FIGS. 5, 6A, or 6B.

In order to manufacture a liquid crystal display device including a liquid crystal display panel according to the present invention, first, a TFT substrate and a color filter substrate are manufactured separately (step 10).

Thereafter, a step of assembling the separately manufactured TFT substrate and the color filter substrate is performed (step 20).

Subsequently, a liquid crystal is injected between the assembled TFT substrate and the color filter substrate and then sealed to produce a liquid crystal display panel (step 3).

Thereafter, the driving module is assembled to the liquid crystal display panel injected up to the liquid crystal, thereby manufacturing a liquid crystal display (step 4).

On the other hand, step 10 is produced again in the order of Figure 6a or 6b.

Specifically, FIG. 6A is a flowchart showing a procedure for manufacturing a TFT substrate. Referring to FIG. 6A, first, a very fine thin film transistor is formed in a matrix form on a glass substrate or the like according to a thin film manufacturing process. At this time, a signal line for operating the thin film transistor is also formed in the process of manufacturing each thin film transistor (step 11).

In the state where the thin film transistor is formed on the glass substrate as described above, an organic insulating film is formed on the glass substrate, and a contact hole is formed on the organic insulating film so that the drain electrode of the thin film transistor is exposed. In this case, the contact hole is performed by the patterned photoresist thin film (step 12).

Thereafter, the photoresist thin film covered on the upper surface of the organic insulating film with the contact hole formed in the organic insulating film is stripped by a mixture of ozone and pure water (step 13).

At this time, as the contamination is removed in the contact hole in the process of performing step 13, the subsequent process is performed without a separate cleaning process.

Thereafter, an electrode is formed in the drain electrode of the thin film transistor through the contact hole (step 14). In this case, the electrode may be made of a transparent conductive material or a metal material having a high reflectance.

Thereafter, an alignment film is formed over the entire surface of the glass substrate, and an alignment groove is formed in the alignment film (step 15).

3 is a flowchart showing the procedure of manufacturing a color filter substrate, first, a black matrix is produced on a glass substrate (step 16). At this time, the black matrix is formed at a portion corresponding to the electrode and the electrode of the TFT substrate described above.

On the other hand, a color pixel is produced so as to face the electrode in the state where the black matrix is formed (step 17).

Subsequently, a common electrode is formed on the upper surface of the glass substrate so that all the color pixels are covered (step 18).

Subsequently, an alignment film is formed on the upper surface of the common electrode, and an alignment groove is further formed on the alignment film (step 19).

Hereinafter, a process of manufacturing the TFT substrate 300 through the process of FIG. 6A will be described in more detail.

<First Embodiment>

The first embodiment manufactures a TFT substrate using <5 pattern masks>. Referring to FIG. 7 or FIG. 8, reference numeral 301 denotes a glass substrate which is a base material of a TFT substrate, and the glass substrate 301 is an active region 301a and a pad region along a dotted line as shown in FIG. 7. 301b).

In this case, a blocking thin film 310 is formed in the active region 301a and the pad region 301b as illustrated in FIG. 8. The blocking thin film 310 serves to block harmful ions eluted from the glass substrate 301 into the thin film transistor.

Meanwhile, as shown in FIG. 9, the chromium thin film layer 322 and the molybdenum-tungsten thin film layer 324 are sequentially formed on the upper surface of the blocking thin film 310 by the sputtering method over the entire surface of the glass substrate 301. do.

Subsequently, as shown in FIG. 7 or FIG. 10, the chromium thin film layer 322 and the molybdenum-tungsten thin film layer 324 having a multilayer structure are patterned by a <first pattern mask> to form a gate electrode 325 in the active region 301a. ) And a gate line 326, and a pad 327 connected to an end of the gate line 326 is formed in the pad region 301b. In this process, the photoresist thin film for forming the gate electrode 325 and the gate line 326 is performed by the photoresist stripping apparatus 100 using ozone and pure water as described above with reference to FIG. 4.

Thereafter, the insulating film 340, the amorphous silicon thin film, and the n ⁺ amorphous silicon thin film are sequentially formed on the glass substrate 301 by a method such as chemical vapor deposition.

Subsequently, the n ⁺ amorphous silicon thin film 357 is patterned so as not to short-circuit on the upper surface of the amorphous silicon thin film 355 by the <second pattern mask>.

Subsequently, the metal thin film is formed on the glass substrate 301 so that the patterned n ⁺ amorphous silicon thin film 355 is covered with the source electrode 360 and the drain electrode 370 by the <third pattern mask>. And a data line 365 to form the thin film transistor 380.

At this time, the separation of the photoresist thin film used to pattern the source drain metal thin film and the n ⁺ amorphous silicon thin film into a desired shape is performed by the photoresist stripping device 100 using ozone and pure water as described above with reference to FIG. 4. Is performed.

In the same manner, in the pad region 301b, the pad 366 formed at the end of the data line 365 is left, and the remaining portions, for example, the thin films formed on the upper surface of the pad 366, are removed.

Subsequently, as shown in FIG. 12, the organic insulating layer 390 is formed to have a thin thickness over the entire surface of the glass substrate 310.

Meanwhile, referring to FIG. 13, after the photoresist thin film is formed over the entire surface of the organic insulating layer 390, the photoresist thin film is patterned through an exposure-development process using a <fourth pattern mask>. Reference numeral 400 is a patterned photoresist thin film.

Subsequently, the organic insulating layer 390 is patterned through the patterned photoresist thin film 400 so that the contact hole 392 is exposed so that the drain electrode 370 of the thin film transistor 380 is exposed to the outside. Is formed.

As described above, in the process of patterning the organic insulating layer 390, the insulating layer 340 covering the pad 327 connected to the gate line 326 formed in the pad region 301b is also patterned together, so that the top surface of the pad 327 is exposed to the outside. Exposed.

Subsequently, in order to remove the photoresist thin film remaining in the organic insulating film 390, the TFT substrate is performed by the photoresist stripping apparatus 100 described above.

15 is an enlarged view of the top surface of the drain electrode 370 after the photoresist is peeled off by the photoresist stripping apparatus 100, and FIG. 16 is an enlarged view of the top surface of the pad 327. 15 or 16, it can be seen that contaminants are cleanly removed on the upper surfaces of the drain electrode 370 and the pad 327 to obtain very good quality.

This will be described with reference to the attached graph of FIG. 17.

First, the vertical axis of the graph of FIG. 17 is a resistance and the horizontal axis of FIG. 17 is a contact resistance measured at various points. In this case, the graph indicated by reference numeral a in the graph of FIG. 17 is a contact resistance in a state where the photoresist thin film is removed in a conventional manner, and the graph indicated by reference numeral b is a photoresist thin film removed in the manner according to the present invention. Contact resistance in the state.

Referring to the graph of Figure 17, the contact resistance according to an embodiment of the present invention shows a much lower value than the contact resistance according to the prior art.

This, in turn, means that when the photoresist thin film is removed by the method according to an embodiment of the present invention, signal distortion and signal modulation are reduced as compared with the prior art, thereby achieving a better display.

Subsequently, as shown in FIG. 18, an electrode forming thin film is formed over the entire surface of the organic insulating layer 390, and the electrode forming thin film is patterned again through a photoresist thin film and a <fifth pattern mask> to form an electrode. 394 is formed. At this time, the peeling of the photoresist thin film is performed by the photoresist stripping apparatus 100 using ozone and pure water as described above with reference to FIG. 4.

Subsequently, an alignment film 395 and an alignment groove 395a are formed on the upper surface of the TFT substrate.

Meanwhile, as shown in FIG. 18, the color filter substrate 200 is assembled to the TFT substrate 300 again. In this case, the color filter substrate 200 forms the color pixels 202 on the glass substrate 201, and the common electrode 210 is sequentially formed on the upper surface of the color pixels 202. In this state, the alignment layer 220 and the alignment groove 225 are formed on the upper surface of the common electrode 201.

The color filter substrate 200 fabricated in this manner is bonded to the TFT substrate 300 in an aligned state, and the liquid crystal 500 is injected between the TFT substrate 300 and the color filter substrate 200 to form a liquid crystal. The display device 600 is manufactured.

Second Embodiment

In the second embodiment, a method of performing display using only four pattern masks is described.

First, the gate electrode 325 is formed on the upper surface of the glass substrate 301 through the process of FIGS. 8 to 10 described above. In this step, a <first pattern mask> is used.

Subsequently, a gate insulating film 340, an amorphous silicon thin film 355, an n ⁺ amorphous silicon thin film 357, and a source / drain electrode are formed on the glass substrate 301 to include the gate electrode 325, as shown in FIG. 19. The metal film 380 is formed sequentially.

More specifically, the gate insulating layer 340 is a transparent thin film formed on the entire surface of the glass substrate 301 to include the gate electrode 325.

On the other hand, an amorphous silicon thin film 355 is formed over the entire surface of the gate insulating film 340. The amorphous silicon thin film 355 is formed to have a thickness of about 2000 GPa. The amorphous silicon thin film 355 serves as a channel for supplying power to the drain electrode from the source electrode, which will be described later, when power is applied to the gate electrode 325.

Subsequently, n ⁺ amorphous silicon thin film 357 is formed on the upper surface of the amorphous silicon thin film 355 again over the entire area. The n ⁺ amorphous silicon thin film 3574 is formed such that the n ⁺ amorphous silicon material in which the n ⁺ material is ion-doped to the amorphous silicon has a thickness of about 500 kPa.

On the other hand, a source / drain electrode forming metal film 380 is formed on the top surface of the n ⁺ amorphous silicon thin film 357 again, and the source / drain electrode forming metal film 380 has a thickness of about 1500 GPa by a sputtering method. It is formed of chromium.

Referring to FIG. 21, a thin photoresist thin film formed on the upper surface of the glass substrate 301 by spin coating or the like may be formed on the glass substrate 301 up to the metal film 380 for forming the source / drain electrodes. 800 is formed.

Subsequently, an exposure process is performed on the photoresist thin film 800 after the <second pattern mask> formed at the designated position of the slit 835a is aligned.

In this case, the partial exposure and the entire surface exposure are simultaneously performed on the photoresist thin film 800 by the second pattern mask 835.

The partial exposure is where the source electrode and the drain electrode are located in the source / drain electrode forming metal layer 380, and the partial exposure forms the slit 835a formed in the second pattern mask 835 to prevent diffraction of light. I use it.

Where the front surface exposure is performed (810, 815) is to be insulated from the adjacent thin film transistor to form an opening through which light is completely transmitted to the second pattern mask 835 corresponding to this portion.

Thereafter, after the partial exposure and the entire surface exposure are completed by the second pattern mask 835, the development process is performed to develop the photoresist thin film 800, thereby patterning the photoresist pattern 840 by forming the photoresist pattern 840. do.

At this time, the photoresist pattern 840 remaining on the glass substrate 301 is thinner than the portion where the thickness of the partially exposed portion is not partially exposed.

Subsequently, a portion of the metal layer 380 for forming the source / drain electrodes, the amorphous silicon thin film layer 355, and the n ⁺ amorphous silicon thin film 357 formed on the glass substrate 301 is not protected by the photoresist pattern 840. Is etched away as shown in FIG. 21.

Referring to FIG. 22, an etch back process is performed on the photoresist pattern 840 at the same ratio over the entire area, and as the predetermined time passes, the thickness of the photoresist pattern 840 becomes thinner. do. As a result, the thinnest portion of the photoresist pattern 840, that is, the partially exposed portion is first removed and opened. As a result, the source / drain electrode forming metal layer 383 is exposed to the outside in the partially exposed portion of the photoresist pattern 840. Of course, the exposed source / drain electrode forming metal layer 383 may not be protected by the photoresist pattern 840.

As shown, the source / drain electrode forming metal layer 383 exposed to the outside is etched by an etchant that selectively etches the source / drain electrode forming metal layer 383, so that the source electrode 383b and the drain are exposed. An electrode 383a is formed.

Thereafter, in the process of forming the drain electrode 383a and the source electrode 383b, an exposed portion of the n ⁺ amorphous silicon thin film 357a is etched and removed using the source / drain electrodes 383a and 383b as a mask.

Subsequently, the photoresist thin film 845 remaining on top of the source / drain electrodes 383a and 383b is removed by the photoresist thin film removing apparatus as shown in FIG.

Subsequently, as shown in FIG. 23, an organic insulating layer 390 is formed on the glass substrate 301.

The organic insulating layer 390 serves to prevent the thin film transistor and the reflective electrode, which will be described later, from shorting.

To realize this, a photoresist thin film is coated on the glass substrate 301 on which the thin film transistor is formed to have a thin thickness as shown in FIG. 23. Subsequently, the photoresist thin film corresponding to the position where the drain electrode 383a is formed is exposed, developed, and patterned through a third pattern mask (not shown) to form a hole.

Referring to FIG. 23, a contact hole 382 is formed in the organic insulating layer 390 so that the drain electrode 383a is exposed to the outside through a hole formed in the photoresist pattern.

Thereafter, the photoresist remaining on the patterned organic insulating layer 390 is removed by the photoresist thin film removing apparatus as shown in FIG. 4.

Thereafter, as illustrated in FIG. 23, a conductive transparent thin film is continuously formed on the upper surface of the patterned organic insulating layer 390. At this time, a photoresist thin film is coated on the conductive transparent thin film.

Subsequently, the photoresist thin film formed on the upper surface of the organic insulating layer 390 is patterned by the <fourth pattern mask>, and then the conductive transparent thin film is patterned in units of pixels through the photoresist thin film to form the reflective electrode 394. .

Thereafter, as shown in FIG. 18, the color filter substrate on which the RGB pixel and the common electrode are formed is coupled to the color filter substrate formed by the thin film transistor, the organic insulating layer 3900, and the reflective electrode 384.

As described in detail above, by etching the remaining photoresist thin film after mixing the thin film with a mixture of ozone and water, it is possible to prevent a pattern defect caused by remaining in the pattern in which the photoresist thin film is already formed. Since a separate cleaning process is not required, display defects of the liquid crystal display may be greatly reduced. In addition, it is very advantageous in terms of production cost by not using an expensive wet chemical for removing photoresist.

In the detailed description of the present invention described above with reference to a preferred embodiment of the present invention, those skilled in the art or those skilled in the art having ordinary knowledge in the scope of the invention described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

Claims (2)

Reaction chamber; An ozone supply device including an ozone generator for generating ozone and an ozone supply unit for supplying the ozone generated in the ozone generator to the reaction chamber; A pure water supply device including a pure water supply tank for storing pure water and a pure water supply unit for injecting the pure water from the pure water supply tank into the reaction chamber; And And a substrate transfer device for allowing the substrate on which the photoresist thin film to be removed is formed to pass through the reaction chamber. The photoresist stripping apparatus according to claim 1, wherein the pure water is adjusted to have a temperature of 50 ° C to 90 ° C.