KR20030040290A - Method for manufacturing far-infrared emitting material using anodizing - Google Patents
Method for manufacturing far-infrared emitting material using anodizing Download PDFInfo
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- KR20030040290A KR20030040290A KR1020030023850A KR20030023850A KR20030040290A KR 20030040290 A KR20030040290 A KR 20030040290A KR 1020030023850 A KR1020030023850 A KR 1020030023850A KR 20030023850 A KR20030023850 A KR 20030023850A KR 20030040290 A KR20030040290 A KR 20030040290A
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- South Korea
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- far
- aluminum
- infrared rays
- anodizing
- ocher
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 title claims abstract description 13
- 238000007743 anodising Methods 0.000 title abstract description 4
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052500 inorganic mineral Inorganic materials 0.000 claims abstract description 5
- 239000011707 mineral Substances 0.000 claims abstract description 5
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims abstract description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims abstract description 3
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 3
- 239000008151 electrolyte solution Substances 0.000 claims abstract 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 238000007598 dipping method Methods 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims 2
- 239000010955 niobium Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 239000004411 aluminium Substances 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 150000003623 transition metal compounds Chemical class 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 4
- -1 aluminum Chemical compound 0.000 abstract description 2
- 229910052723 transition metal Inorganic materials 0.000 abstract description 2
- 238000002048 anodisation reaction Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000036541 health Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000017531 blood circulation Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004332 deodorization Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000002503 metabolic effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/08—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing inorganic acids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/024—Anodisation under pulsed or modulated current or potential
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/06—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used
- C25D11/10—Anodisation of aluminium or alloys based thereon characterised by the electrolytes used containing organic acids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Resistance Heating (AREA)
Abstract
본 발명은 양극산화를 이용한 원적외선 방사재료 제조방법에 관한 것으로, 더욱 상세하게는 알루미늄 등의 양극산화가 가능한 판재형태의 재료를 황산, 옥살산, 크롬산 등의 전해액중에서 전기화학적인 방법을 통해 사용재료의 표면에 산화물을 형성시키는 방법에 관한 것이다. 이후 황토, 맥반석 등의 광물질과 천이금속원소 등의 원적외선을 발생하는 물질을 1종류 이상 혼합, 분쇄하여 산화피막이 형성된 알루미늄 표면 위에 도포하는 것을 특징으로 하고 있다.The present invention relates to a method for manufacturing a far-infrared radiation material using anodization, and more particularly, to a plate-type material capable of anodizing aluminum, such as aluminum, in an electrolyte solution of sulfuric acid, oxalic acid, and chromic acid. A method of forming an oxide on the surface. Thereafter, one or more kinds of minerals, such as loess and elvan, and far-infrared rays, such as transition metal elements, are mixed and pulverized and coated on an aluminum surface on which an oxide film is formed.
Description
원적외선은 다른 광선과 달리 복사, 침투력, 공명, 흡수하는 특징을 가지고 있어서 생체활성화, 물분자활성화, 탈취작용, 생육촉진, 에너지절약 등의 효과를 발휘하게 된다. 따라서 인체에 있어서도 모세관확장, 혈액순환촉진, 신진대사촉진, 노폐물 및 유해금속 등을 배출시키므로 유용한 광선이라고 할 수 있다. 응용분야도 생활용품을 비롯하여 건설분야, 농업분야, 건강의료분야 등 다양하게 확대 되어가고 있다.Far-infrared rays, unlike other rays, have the characteristics of radiation, penetration, resonance, and absorption, so that they have effects such as bioactivation, water molecule activation, deodorization, growth promotion, and energy saving. Therefore, it can be said to be a useful light ray because it emits capillary expansion, blood circulation promotion, metabolic promotion, waste products and harmful metals in the human body. The field of application is also expanding to various areas such as household goods, construction, agriculture, and health care.
본 발명은 양극산화 방법에 의해 산화피막(Anodic Film)을 금속 표면 위에 형성시킨 후 황토와 맥반석 등 원적외선 방사물질을 혼합, 분쇄하여 코팅 및 디핑(Dipping)방법에 의해 새로운 원적외선 방사체를 제조하는 방법에 관한 것이다.The present invention is a method of producing a new far-infrared radiator by coating and dipping method by forming an anodized film on the metal surface by anodizing and mixing and grinding far-infrared radiating materials such as ocher and elvan. It is about.
종래의 원적외선 방사재료는 천연광물성 원료와 합성원료 그리고 비금속물질 등을 혼합하여 성형한 후 고온에서 소성하는 복잡하고 어려운 공정을 통해서 제조되어 왔다. 또한 고가의 원료를 다량 사용하는 관계로 원가가 상승하여 원적외선의 유용한 효능에도 불구하고 대중화에 많은 제약을 받는 문제점이 있었다.Conventional far-infrared radiation materials have been manufactured through a complex and difficult process of mixing and molding natural mineral raw materials, synthetic raw materials and non-metallic materials, and then firing them at high temperature. In addition, due to the use of a large amount of expensive raw materials, the cost has risen, and despite the useful efficacy of far-infrared rays, there was a problem of being restricted to popularization.
본 발명은 상기의 문제점을 해결하기 위해 전기화학적인 간단한 방법을 통해 산화알루미늄 등과 같은 산화물을 형성시켜 고가의 광물질을 별도로 첨가하지 않도록 할 수 있는 대체방법을 제공하는데 본 발명의 목적이 있다. 이후 황토, 맥반석 등의 광물질과 천이금속원소 등의 원적외선을 발생하는 물질을 1종류 이상 혼합, 분쇄하여 산화피막이 형성된 알루미늄 표면 위에 도포함으로써 고효율의 원적외선 방사재료의 제조방법을 제공하는 것을 특징으로 하고 있다.In order to solve the above problems, an object of the present invention is to provide an alternative method for preventing the addition of expensive minerals by forming an oxide such as aluminum oxide through an electrochemical simple method. Thereafter, one or more types of minerals, such as loess and elvan, and materials generating far-infrared rays, such as transition metal elements, are mixed and pulverized and coated on an aluminum surface on which an oxide film is formed, thereby providing a method for producing a highly efficient far-infrared radiation material. .
두께 0.1∼10mm의 판재형 알루미늄(또는 Mg, Zn, Ti, Ta, Hf, Nb)을 황산(H2SO4), 옥살산(H2C2O4), 크롬산(CrO3) 등의 전해액에서 교류(AC) 및 직류(DC)를 이용하여 10∼70℃의 온도로 5∼120분간 유지하여 1∼100㎛ 두께의 산화알루미늄(Al2O3) 피막을 형성시킨다. 상기방법에 의한 산화피막은 다공질 형태를 갖고 있으므로 이후 공정에서 이루어지는 코팅제와의 밀착성을 훨씬 향상시키는 장점이 있다. 다공성 산화피막이 형성된 알루미늄 등의 표면 위에 황토20∼80wt％ 와 맥반석 5∼50wt％를 250메쉬 이상으로 분쇄하여 혼합액을 도포 한다. 이때 도포방법은 코팅 및 디핑방법을 이용한다. 그리고 황토와 맥반석 외에도 원적외선을 방사하는 다른 물질을 도포하여도 같은 효과를 얻을 수 있다. 원적외선을 도포 한 후 약 200∼500℃의 온도로 건조로에서 10∼60분간 건조하였다. 본 발명에 의해 제조된 다공성 산화피막이 형성된 알루미늄 등의 표면 위에 황토20∼80wt 와 맥반석 5∼50wt％를 250메쉬 이상으로 분쇄하여 혼합액을 도포 한 방사재료는 방사율이 0.9이상(파장 5∼20㎛)을 나타내었다.Plate-shaped aluminum (or Mg, Zn, Ti, Ta, Hf, Nb) having a thickness of 0.1 to 10 mm was used in an electrolyte such as sulfuric acid (H 2 SO 4 ), oxalic acid (H 2 C 2 O 4 ), and chromic acid (CrO 3 ). By using alternating current (AC) and direct current (DC), an aluminum oxide (Al 2 O 3 ) film having a thickness of 1 to 100 µm is formed by holding at a temperature of 10 to 70 ° C for 5 to 120 minutes. Since the oxide film according to the method has a porous form, there is an advantage in that the adhesion with the coating agent made in the subsequent process is much improved. On the surface of aluminum or the like on which the porous oxide film is formed, 20 to 80 wt% of ocher and 5 to 50 wt% of elvan are pulverized to 250 mesh or more to apply a mixed solution. At this time, the coating method uses a coating and dipping method. In addition to ocher and elvan, the same effect can be achieved by applying other materials that emit far infrared rays. After applying the far-infrared ray and dried in a drying furnace at a temperature of about 200 ~ 500 ℃ for 10 to 60 minutes. The spinning material coated with a mixture of 20 to 80 wt% of ocher and 5 to 50 wt% of gannetite over 250 mesh on the surface of aluminum, etc., on which the porous oxide film formed by the present invention is applied, has an emissivity of 0.9 or more (wavelength of 5 to 20 μm). Indicated.
본 발명은 양극산화(Anodizing) 방법을 이용하여 손쉽게 금속표면 위에 산화알루미늄과 같은 금속산화물을 형성시키므로서, 공정의 간편화로 기존의 방법과 달리 대량생산이 가능하며, 또한 고가의 세라믹재료를 첨가하지 않고 전기화학적으로 형성시키기 때문에 상당한 원가절감이 될 수 있다. 아울러 금속 표면을 다공질화 함으로서 표면요철효과가 있어 원적외선 방사재료와의 접착력이 우수하다는 장점을 가지고 있다. 따라서 고 성능의 원적외선 방사재료를 저가에 대량으로 공급할 수가 있어서 인체의 건강증진 및 산업발전에 크게 기여할 것으로 기대된다.The present invention easily forms a metal oxide such as aluminum oxide on the metal surface by using an anodizing method, thereby simplifying the process and mass production is possible, unlike existing methods, and does not add expensive ceramic materials. Because it is formed electrochemically, it can be a significant cost reduction. In addition, the porous surface of the metal has a surface roughness effect has an advantage of excellent adhesion to the far-infrared radiation material. Therefore, high-performance far-infrared radiation materials can be supplied in large quantities at low cost, which is expected to contribute greatly to human health and industrial development.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020030023850A KR20030040290A (en) | 2003-04-15 | 2003-04-15 | Method for manufacturing far-infrared emitting material using anodizing |
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| Application Number | Priority Date | Filing Date | Title |
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| KR1020030023850A KR20030040290A (en) | 2003-04-15 | 2003-04-15 | Method for manufacturing far-infrared emitting material using anodizing |
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| KR20030040290A true KR20030040290A (en) | 2003-05-22 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101023942B1 (en) * | 2009-03-09 | 2011-03-28 | 유명기 | Lighting equipment |
| US20130032599A1 (en) * | 2011-08-05 | 2013-02-07 | Calphalon Corporation | Process for Making Heat Stable Color Anodized Aluminum and Articles Formed Thereby |
-
2003
- 2003-04-15 KR KR1020030023850A patent/KR20030040290A/en not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101023942B1 (en) * | 2009-03-09 | 2011-03-28 | 유명기 | Lighting equipment |
| US20130032599A1 (en) * | 2011-08-05 | 2013-02-07 | Calphalon Corporation | Process for Making Heat Stable Color Anodized Aluminum and Articles Formed Thereby |
| US9139926B2 (en) * | 2011-08-05 | 2015-09-22 | Calphalon Corporation | Process for making heat stable color anodized aluminum and articles formed thereby |
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| PA0109 | Patent application |
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