KR20020096524A - Wafer holding structure of the processing chamber for fabricating semiconductor devices - Google Patents
Wafer holding structure of the processing chamber for fabricating semiconductor devices Download PDFInfo
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- KR20020096524A KR20020096524A KR1020010035084A KR20010035084A KR20020096524A KR 20020096524 A KR20020096524 A KR 20020096524A KR 1020010035084 A KR1020010035084 A KR 1020010035084A KR 20010035084 A KR20010035084 A KR 20010035084A KR 20020096524 A KR20020096524 A KR 20020096524A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
본 발명은 반도체 장치 제조용 공정챔버의 웨이퍼 안착 구조에 관한 것으로, 공정챔버로 공급된 웨이퍼가 안착되는 척이 상하로 구동되며, 상기 척위에 소정 공정 진행을 위한 온도조건을 제공하며 열전도성을 갖는 그라파이트의 변부에 소정 형상의 구멍이 적어도 하나 이상 형성되어 있다. 그리고 상기 구멍에는 지지수단의 일단부가 삽입되는데, 상기 웨이퍼가 소정 높이가 되도록 지지하기 위한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer seating structure of a process chamber for manufacturing a semiconductor device, wherein a chuck on which a wafer supplied to the process chamber is seated is driven up and down, providing temperature conditions for a predetermined process on the chuck and having thermal conductivity At least one hole of a predetermined shape is formed in the side of the. One end of the support means is inserted into the hole to support the wafer at a predetermined height.
본 발명에 의하면, 매엽식의 공정챔버에서 웨이퍼가 소정 높이 유지된 상태로 공정이 진행됨으로서 웨이퍼 전면 뿐만 아니라 후면에도 소정의 막질이 균일하게 증착되는 효과가 있다.According to the present invention, the process is performed in a state that the wafer is maintained at a predetermined height in the single-leaf process chamber, so that a predetermined film quality is uniformly deposited on the back surface as well as the front surface of the wafer.
Description
본 발명은 반도체 장치 제조를 위한 식각, 증착 등의 공정이 이루어지는 공정챔버 내에서의 웨이퍼 안착을 위한 반도체 장치 제조용 공정챔버의 웨이퍼 안착 구조에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer seating structure of a process chamber for manufacturing a semiconductor device for wafer mounting in a process chamber where etching, vapor deposition, and the like for semiconductor device manufacturing are performed.
웨이퍼를 가공하여 반도체 장치로 제조하기 위해서는 고온, 고압 또는 저압 분위기에서 일정 시간동안 소정의 공정가스를 공급하여 웨이퍼 상에 소정의 막질이 형성되도록 하거나, 형성된 막질을 제거하는 공정이 수차례 이루어진다. 이러한 공정을 통해서 웨이퍼 상에 원하는 형태의 패턴이 형성되며, 이러한 공정조건에 따라서 상기 패턴의 결과가 다르게 나타날 수 있다. 특히, 공정이 어떤 조건에서 수행되느냐에 따라서 다음 공정을 어떤 조건에서 진행해야 하는지가 결정된다.In order to fabricate a wafer into a semiconductor device, a process of supplying a predetermined process gas for a predetermined time in a high temperature, high pressure, or low pressure atmosphere to form a predetermined film quality on the wafer or removing the formed film quality is performed several times. Through this process, a pattern having a desired shape is formed on the wafer, and the result of the pattern may be different according to the process conditions. In particular, under what conditions the process is carried out, it is determined under what conditions the next process should proceed.
그러므로, 단일 공정만으로 반도체 장치가 제조되는 것이 아니고, 수차례의 서로 다른 공정을 수행하거나 이러한 공정들이 반복되므로 어느 한 공정을 수행하기 위한 공정조건 및 공정설비를 선택하는 것은 매우 중요하다고 할 것이다.Therefore, the semiconductor device is not manufactured by only a single process, and it is very important to select process conditions and process equipment for performing any one process because the process is performed several different times or these processes are repeated.
예로써, 웨이퍼에 HSG(HemiSpherical Grain)를 형성하기 위한 종래의 공정설비를 예로 들어 설명한다.By way of example, a conventional process facility for forming HSG (HemiSpherical Grain) on a wafer will be described as an example.
도1을 참조하면, 종래의 HSG공정을 수행하기 위한 매엽식 공정챔버의 예가개략적으로 도시되어 있다.Referring to FIG. 1, an example of a single wafer process chamber for performing a conventional HSG process is shown schematically.
반도체 장치 제조를 위한 공정이 진행되는 챔버(10)내에는 웨이퍼를 안착시키기 위한 척(12)이 구비되며, 챔버(10)내로 공급되는 웨이퍼(18)를 홀딩(Holding)하기 위해 승강하는 홀더(14)가 구비되어 있다. 그리고, 웨이퍼(18)가 바로 위에 놓이며 소정의 가열수단을 통해 공정을 위한 온도조건을 제공하는 그라파이트(17)가 구비되어 있다. 그런데, 그라파이트(17)의 소정 부분에는 홀더(14)가 하강하면서 웨이퍼(18)를 내려 놓을 때 웨이퍼(18)의 후면이 그라파이트(17)에 밀착되도록 하기 위해 홀더(14)가 삽입되는 홈(도시하지 않음)이 형성되어 있다.A chuck 12 for seating a wafer is provided in the chamber 10 where a process for manufacturing a semiconductor device is performed, and a holder for lifting and lowering to hold the wafer 18 supplied into the chamber 10 ( 14). Then, the wafer 18 is placed directly on top of the graphite 17, which provides a temperature condition for the process through a predetermined heating means. However, in the predetermined portion of the graphite 17, a groove into which the holder 14 is inserted so that the rear surface of the wafer 18 is in close contact with the graphite 17 when the holder 14 is lowered while the holder 14 is lowered ( Not shown) is formed.
그리고, 홀더(14)를 수직으로 지지하며 홀더(14)를 상하로 구동시키기 위한 홀더축(16)이 에어실린더(24)의 동작에 의해 홀더축(16)을 들어올리는 홀더벨로즈(22)와 연결되어 있다. 척(12)의 수직적인 승강을 위해 홀더축(16)의 외측에 척벨로즈(20)가 구비되어 있으며, 공정진행시 챔버(10)가 밀폐된 상태로 공정이 이루어지도록 하는 돔(26, Dome)이 구비되어 있다. 가스를 공급하기 위한 가스공급부나 챔버(10)내의 압력조건을 형성하기 위한 진공펌프 등은 편의상 도시하지 않았다.The holder bellows 22 supporting the holder 14 vertically and the holder shaft 16 for driving the holder 14 up and down lifts the holder shaft 16 by the operation of the air cylinder 24. Connected with The chuck bellows 20 is provided on the outer side of the holder shaft 16 to vertically lift and lower the chuck 12, and the dome 26, which allows the process to be performed while the chamber 10 is closed, is performed during the process. ) Is provided. The gas supply part for supplying gas, the vacuum pump for forming the pressure condition in the chamber 10, etc. are not shown for convenience.
이상과 같이 개략적으로 도시된 종래의 HSG공정을 수행하기 위한 공정설비는, 먼저 웨이퍼(18)가 소정의 이송수단을 통해 챔버(10) 안으로 공급되면 웨이퍼(18)는 홀더(14)위에 안착된다. 이때 홀더(14)는 웨이퍼(18)를 받기 위해 상승한 상태로서 그 형상은 대략 반원형을 이루면서 세 개의 부분으로 나뉘어진 형태로 웨이퍼(18)를 지지한다. 웨이퍼(18)가 홀더(14)위에 안착되면 서서히 하강하여그라파이트(17)위에 놓이도록 함과 동시에 홀더(14)는 그라파이트(17)에 삽입된다.In the process equipment for performing the conventional HSG process schematically illustrated as above, the wafer 18 is first placed on the holder 14 when the wafer 18 is first supplied into the chamber 10 through a predetermined transfer means. . At this time, the holder 14 is raised in order to receive the wafer 18, and the shape of the holder 14 forms a semi-circular shape and supports the wafer 18 in the form of three parts. When the wafer 18 is seated on the holder 14, it is gradually lowered so as to be placed on the graphite 17 and the holder 14 is inserted into the graphite 17.
이와 같은 순서에 의해 웨이퍼가 안착된 상태에서 공정이 이루어지는데, 웨이퍼(18)가 정확하게 그라파이트(17)에 밀착된 상태에서 공정이 이루어지면 웨이퍼 전면에만 막질이 형성된다.In this order, the process is performed in a state where the wafer is seated. If the process is performed while the wafer 18 is closely adhered to the graphite 17, the film is formed only on the entire surface of the wafer.
그런데, 웨이퍼(18)가 그라파이트(17)상에 놓여진 상태에서 공정이 진행되다 보면 웨이퍼가 놓여지지 않는 그라파이트(17) 부분에 웨이퍼에 증착되는 만큼의 막질이 증착되어서 누적 증착부분이 소정의 높이로 형성된다. 이 경우 홀더(14)에 의해 웨이퍼가 안착되면 누적 증착부분에 웨이퍼가 놓이게 되어서 레벨링(Leveling)이 맞추어지지 않는 경우가 간혹 발생되었다. 그에 따라 웨이퍼가 틀어지거나 그라파이트(17)에 정확하게 놓여지지 않은 상태에서 공정이 진행됨으로써 후속공정이 수행되는 동안 불량발생의 요인으로 작용하였다.However, if the process is performed while the wafer 18 is placed on the graphite 17, the film quality is deposited on the graphite 17 portion where the wafer is not placed so that the cumulative deposition portion is at a predetermined height. Is formed. In this case, when the wafer is seated by the holder 14, the wafer is placed on the cumulative deposition portion, so that sometimes the leveling is not adjusted. As a result, the process proceeds in a state where the wafer is misaligned or not correctly placed on the graphite 17, thereby acting as a cause of defects during the subsequent process.
예를 들면, 도2의 예와 같이 웨이퍼(18)가 수평으로 놓여지지 않기 때문에 웨이퍼(18) 후면에 소정의 공간이 존재하여서 웨이퍼 전면 뿐만 아니라 후면에도 공정가스에 의한 막이 형성되었다. 그러므로, 막이 형성되어 있는 웨이퍼(18) 후면과 그라파이트(17)에 웨이퍼가 밀착되어서 막이 형성되어 있지 않은 면과의 레벨링 차이가 발생하였다.For example, since the wafer 18 is not placed horizontally, as shown in the example of FIG. 2, a predetermined space exists on the rear surface of the wafer 18, so that a film formed by a process gas is formed not only on the front surface of the wafer but also on the rear surface. Therefore, the wafer is brought into close contact with the back surface of the wafer 18 on which the film is formed and the graphite 17, and a leveling difference occurs between the surface on which the film is not formed.
특히, 이와 같은 현상은 홀더축(16)이 나사식으로 이루어져 있어서 승강시 홀더축(16)에 의해 좌우로 기울어짐이 발생하여 그와 같은 레벨링 오류가 발생되었다.In particular, such a phenomenon is that the holder shaft 16 is made of a screw type so that the tilting to the left and right by the holder shaft 16 during the lifting and lowering caused such leveling errors.
이와는 달리 다량의 웨이퍼에 HSG 공정이 동시에 이루어지는 배치식(Batch)설비에서는 공정 중 웨이퍼의 후면이 노출되므로 공정가스에 의해 후면에도 소정 두께의 막질이 도포된다.On the other hand, in a batch facility in which HSG processes are simultaneously performed on a large amount of wafers, since the rear surface of the wafer is exposed during the process, a film having a predetermined thickness is also applied to the rear surface by the process gas.
상기와 같은 매엽식 설비에서의 레벨링 오류는 후속공정에 영향을 미치게 된다. 예를 들면, HSG가 형성된 웨이퍼 위에 캐패시터(Capacitor)를 형성하기 위해 옥사이드(Oxide)를 얇게 형성하는 공정을 수행함에 있어서, 상기 배치식 설비에 의해 공정이 이루어진 웨이퍼와는 다른 두께를 갖게 되므로 공정진행시 원하는 옥사이드 두께를 얻기 위해서는 공정진행 시간을 늘려야 한다. 그와 더불어, 공급되는 가스의 소모량이 그만큼 더 증가되어야 한다.Leveling errors in such a sheet type plant will affect subsequent processes. For example, in performing a process of forming a thin oxide to form a capacitor on the wafer on which the HSG is formed, the process is progressed because the batch process has a thickness different from that of the wafer. In order to achieve the desired oxide thickness, process run times must be extended. In addition, the consumption of the supplied gas must be increased by that much.
또한, 매엽식 공정설비의 경우 홀더(14)를 사용하면서 웨이퍼를 척(12)과 접촉시키기 때문에 접촉에 의한 파티클 발생의 소지가 있었다. 그리고, 홀더(14)를 승강시키는 에어실린더(24)와 챔버(10)내의 리크(Leak)를 방지하기 위한 벨로즈들(20, 22)에서 리크가 발생되어서 설비 비가동 시간이 발생되어 이를 수리하기 위한 시간이 별도로 소요되는 문제점이 있었다.In the case of the sheet type processing equipment, the wafer is brought into contact with the chuck 12 while the holder 14 is used, and there is a possibility of particle generation due to contact. In addition, leakage occurs in the air cylinder 24 for elevating the holder 14 and the bellows 20 and 22 for preventing the leak in the chamber 10, thereby causing equipment downtime to be repaired. There was a problem that takes time to do separately.
따라서, 전술한 바와 같이 종래의 매엽식 공정설비를 이용하여 소정의 공정을 수행하는 동안 웨이퍼에 균일한 막질증착이 이루어지지 않았고, 후속공정 수행시 과다한 공정가스가 요구되거나 과다한 시간이 소요되는 등의 문제점이 있었다.Therefore, as described above, uniform film quality is not deposited on the wafer during a predetermined process using a conventional sheet type processing equipment, and excessive process gas is required or excessive time is required for the subsequent process. There was a problem.
본 발명의 목적은, 매엽식으로 공정을 진행하는 공정챔버에서 웨이퍼의 전면 뿐만 아니라 후면에도 소정의 막질이 증착되도록 하는 반도체 장치 제조용 공정챔버의 웨이퍼 안착 구조를 제공하는 것이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a wafer seating structure of a process chamber for manufacturing a semiconductor device in which a predetermined film quality is deposited on a back surface as well as a front surface of a wafer in a process chamber in which the process is processed in a single-leaf process.
본 발명의 다른 목적은, 매엽식 설비에 의해 공정이 진행된 웨이퍼의 증착두께와 배치식 설비에 의해 공정이 진행된 웨이퍼의 증착두께가 서로 차이가 나지 않도록 하기 위한 반도체 장치 제조용 공정챔버의 웨이퍼 안착 구조를 제공하는 것이다.Another object of the present invention is to provide a wafer mounting structure of a process chamber for manufacturing a semiconductor device so that the deposition thickness of the wafer processed by the sheet type equipment and the deposition thickness of the wafer processed by the batch equipment do not differ from each other. To provide.
도1은 종래의 매엽식 반도체 장치 제조를 위한 공정챔버의 웨이퍼 안착 구조를 개략적으로 보여주는 단면도이고,1 is a cross-sectional view schematically showing a wafer seating structure of a process chamber for manufacturing a conventional sheet type semiconductor device;
도2는 도1에 도시된 안착 구조에 의해 나타날 수 있는 웨이퍼의 안착상태를 보여주는 단면도이며,FIG. 2 is a cross-sectional view illustrating a mounting state of a wafer which may be exhibited by the mounting structure shown in FIG. 1;
도3은 본 발명에 의한 실시예의 웨이퍼 안착 구조를 개략적으로 보여주는 단면도이고,3 is a cross-sectional view schematically showing a wafer seating structure of an embodiment according to the present invention;
도4는 도3에 의한 웨이퍼 안착 구조에서 공정이 이루어질 때의 가스의 흐름을 보여주는 단면도이며,4 is a cross-sectional view showing a gas flow when a process is performed in the wafer seating structure according to FIG. 3;
도5는 본 발명에 의한 일 실시예의 핀의 형상을 보여주는 사시도이고, 그리고Figure 5 is a perspective view showing the shape of the pin of one embodiment according to the present invention, and
도6은 본 발명에 의한 일 실시예의 핀이 삽입되는 홀이 형성되어 있는 그라파이트의 예를 보여주는 평면도이다.6 is a plan view showing an example of graphite in which a hole into which a pin is inserted according to an embodiment of the present invention is formed.
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
10, 30 : 공정챔버12, 32 : 척10, 30: process chamber 12, 32: chuck
14 : 홀더16 : 홀더축14 holder 16 holder axis
17, 40 : 그라파이트20, 22, 34 : 벨로즈17, 40: graphite 20, 22, 34: bellows
38 : 핀42 : 핀홀38: pin 42: pinhole
상기 목적을 달성하기 위한 본 발명에 따른 반도체 장치 제조용 공정챔버의 웨이퍼 안착 구조는, 공정챔버로 공급된 웨이퍼가 안착되는 척이 상하로 구동되며, 상기 척위에 소정 공정 진행을 위한 온도조건을 제공하고 열전도성을 가지는 그라파이트의 변부에 소정 형상의 구멍이 적어도 하나 이상 형성되어 있다. 그리고 상기 구멍에는 지지수단의 일단부가 삽입되는데, 상기 웨이퍼가 소정 높이가 되도록 지지하기 위한 것이다.The wafer seating structure of the process chamber for manufacturing a semiconductor device according to the present invention for achieving the above object, the chuck on which the wafer supplied to the process chamber is seated is driven up and down, to provide a temperature condition for the predetermined process progress on the chuck At least one hole of a predetermined shape is formed in the edge portion of the graphite having thermal conductivity. One end of the support means is inserted into the hole to support the wafer at a predetermined height.
바람직하기로는 상기 구멍은 상기 그라파이트의 주변을 따라 3개 정도 형성되되 그 형성된 모양이 삼각형을 이루도록 하며, 상기 구멍은 상기 웨이퍼의 변부를 지지하는 것이 바람직하다.Preferably, about three holes are formed along the periphery of the graphite, and the shape of the holes is triangular, and the holes support the sides of the wafer.
상기 지지수단의 바람직한 구성은, 머리부가 원통형상을 이루면서 상기 웨이퍼와 접하여서 지지하고, 상기 머리부의 하부에 상기 원통형상의 지름보다 더 크게 돌출된 지지부가 환형을 이룬다. 그리고 상기 지지부 하부의 삽입부는 상기 머리부의 지름과 같이 형성되며, 상기 구멍에 삽입되어 지지하는 역할을 한다.The preferred configuration of the support means is that the head is in contact with the wafer while forming a cylindrical shape, the support portion protruding larger than the diameter of the cylindrical shape in the lower portion of the head is annular. And the insertion portion of the lower portion of the support is formed as the diameter of the head, it is inserted into the hole to support.
이때 상기 지지수단은 공정가스, 온도, 압력 등의 공정조건에 의해 그 성질이 변하지 않는 재질로 이루어지는 것이 바람직하며, 상기 재질의 예로써수정(Quartz), 실리콘 카바이드(Silicon Carbide), 세라믹(Ceramic) 등으로 제작될 수 있다.At this time, the support means is preferably made of a material that does not change its properties due to process conditions, such as process gas, temperature, pressure, and the like as a quartz material (Quartz), silicon carbide (Ceramic), ceramic (Ceramic) Or the like.
더욱 바람직하기로 상기 지지수단은 소정 웨이퍼 이송수단의 이동경로의 외측에 설치되어서 웨이퍼 이송에 방해가 되지 않도록 하는 것이 좋다.More preferably, the support means may be installed outside the movement path of the predetermined wafer transfer means so as not to interfere with the wafer transfer.
이하, 본 발명에 대한 구체적인 실시예를 첨부된 도면을 참조하여 상세하게 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
예컨대, 본 발명의 실시예는 여러 가지 형태로 변형될 수 있으며, 본 발명의 범위가 아래에서 상술한 실시예로 인해 한정되는 것으로 해석되어서는 안 된다. 본 실시예는 당업계에서 평균적인 지식을 가진 자에게 본 발명을 보다 완전하게 설명하기 위해서 제공되는 것이다. 따라서, 도면에서의 요소의 형상 등은 보다 명확한 설명을 강조하기 위해서 과장되어진 것이다.For example, embodiments of the present invention may be modified in various forms, and the scope of the present invention should not be construed as being limited by the embodiments described above. This embodiment is provided to more completely explain the present invention to those skilled in the art. Accordingly, the shape of the elements in the drawings and the like are exaggerated to emphasize a clearer description.
도3을 참조하면, 본 발명의 일 실시예에 의한 공정챔버의 개략적인 도면이 제시되어 있다.3, there is shown a schematic diagram of a process chamber according to an embodiment of the present invention.
반도체 장치 제조공정이 이루어지는 공정챔버(30) 내에는 웨이퍼를 안착하는 척(32)이 구비되어 있으며, 이 척(32)이 웨이퍼를 안착하도록 승하강시키는 척벨로즈(34)가 하부에 구비되어 있다. 척(32) 위에는 도시하지 않은 소정의 가열수단으로부터 열이 공급되어 열전도에 의해 온도에 대한 공정조건을 제공하는 그라파이트(40)가 구비된다. 이 그라파이트(40)에는 소정 부위에 홀이 형성되어 있어서 핀(38)이 삽입되는 공간을 제공한다. 소정의 이송수단에 의해 공정챔버(30) 안으로 이송된 웨이퍼(36)는 결국 핀(38) 위에 안착되도록 구성된다.The process chamber 30 in which the semiconductor device manufacturing process is performed is provided with a chuck 32 for seating a wafer, and a chuck bellow 34 for raising and lowering the chuck 32 to seat the wafer is provided below. . On the chuck 32, graphite 40 is provided to supply heat from a predetermined heating means (not shown) to provide a process condition with respect to temperature by thermal conduction. The graphite 40 has a hole formed in a predetermined portion to provide a space in which the pin 38 is inserted. The wafer 36 transferred into the process chamber 30 by a predetermined transfer means is configured to eventually be seated on the pin 38.
이와 같은 구성에 의한 본 발명의 일 실시예는 척밸로즈(34)가 작동되어서 척(32)이 상승한 후 웨이퍼(36)가 이송수단(46)에 의해 공정챔버(30) 안으로 이송된다. 이송된 웨이퍼(36)는 그라파이트(40)의 홀에 삽입되어 있는 핀(38) 위에 놓이게 되고, 돔(42)이 닫히면서 공정챔버(30)는 밀폐되며, 진공펌프(도시하지 않음)가 작동되어서 진공이 형성된다. 그리고, 일정 수준의 진공이 형성되면 HSG 공정수행을 위한 가스가 공급되면서 웨이퍼(36)에 소정 두께의 증착이 일정 시간동안 이루어진다.According to the exemplary embodiment of the present invention, the chuck bellows 34 are operated to raise the chuck 32 and the wafer 36 is transferred into the process chamber 30 by the transfer means 46. The transferred wafer 36 is placed on the pin 38 inserted into the hole of the graphite 40, the process chamber 30 is closed with the dome 42 closed, and a vacuum pump (not shown) is operated. The vacuum is formed. In addition, when a certain level of vacuum is formed, a gas having a predetermined thickness is deposited for a predetermined time while a gas for performing the HSG process is supplied.
증착이 이루어지는 것을 보여주기 위한 간략화된 도면이 도4를 통해 제공된다. 즉, 웨이퍼(36)의 상부 또는 일측부로부터 공정가스가 공급되면 웨이퍼(36)의 전면으로부터 시작하여 증착이 이루어진다. 그리고, 웨이퍼(36) 후면에도 증착이 이루어지는데, 그라파이트(40)에 삽입되어 있는 핀(38) 위에 웨이퍼(36)가 놓여져 있으므로 그라파이트(40) 면과 웨이퍼(36) 후면 사이에는 일정 높이의 공간이 형성된다. 웨이퍼(36) 전면 뿐만 아니라 상기 공간을 통해 후면에도 소정의 가스가 공급되어서 후면에도 일정 두께의 막질이 균일하게 증착된다.A simplified diagram is provided through FIG. 4 to show that deposition takes place. That is, when the process gas is supplied from the upper side or one side of the wafer 36, deposition starts from the front surface of the wafer 36. Deposition is also performed on the back surface of the wafer 36. Since the wafer 36 is placed on the pin 38 inserted into the graphite 40, a space having a predetermined height is disposed between the surface of the graphite 40 and the back surface of the wafer 36. Is formed. A predetermined gas is supplied not only to the front surface of the wafer 36 but also to the rear surface through the space so that a certain thickness of film is uniformly deposited on the rear surface.
이때 그라파이트(40)의 표면과 웨이퍼(36) 후면과의 거리, 즉 핀(38)의 높이(h)에 따라 증착되는 두께 또는 균일도 등의 특성이 달라질 수 있다. 본 실시예에서는 높이(h)가 5 ㎜ 내지 11 ㎜인 경우 양호한 결과를 얻을 수 있었으며, 더욱 바람직하기로는 8 ㎜ 내지 10 ㎜일 때 더 좋은 후면 막질증착 결과를 얻을 수 있었다.In this case, characteristics such as thickness or uniformity may vary depending on the distance between the surface of the graphite 40 and the back surface of the wafer 36, that is, the height h of the fin 38. In this embodiment, good results were obtained when the height h was 5 mm to 11 mm, and more preferably, when the height h was 8 mm to 10 mm, better back film deposition was obtained.
도5에는 구현된 핀(38)의 형상이 구체적으로 도시되어 있다.5 specifically illustrates the shape of the implemented pin 38.
즉, 핀(38)의 머리부(380)는 웨이퍼(36)가 놓이는 부분으로 돌출되어 있으며, 끝 부분이 둥글게 형성되어서 웨이퍼(36)의 후면이 스크래치(Scratch) 등으로 인한 파티클이 발생되지 않도록 한다. 지지부(382)는 그라파이트(40)에 삽입된 채 흔들림이 없이 웨이퍼(36)를 지지하기 위해 환형의 돌출부를 갖도록 형성되는 것이 바람직하다. 물론 지지부(382)가 형성되지 않은 핀(38)이 사용될 수도 있음은 당연하다. 그리고, 삽입부(384)는 그라파이트(40)의 홀의 지름에 맞도록 형성되며, 그 깊이도 홀의 깊이에 맞게 형성하는 것이 바람직하다.That is, the head 380 of the pin 38 protrudes into a portion where the wafer 36 is placed, and the end portion is rounded so that particles on the rear surface of the wafer 36 are not generated due to scratches or the like. do. The support 382 is preferably formed to have an annular protrusion to support the wafer 36 without shaking while being inserted into the graphite 40. Of course, the pin 38 without the support 382 may be used. And, the insertion portion 384 is formed to match the diameter of the hole of the graphite 40, the depth is preferably formed to match the depth of the hole.
이때 핀(38)은 공정조건에 영향을 받지 않는 재질의 것으로 제작되는 것이 바람직한데, 예를 들면, 수정(Quartz), 실리콘 카바이드(Silicon Carbide), 세라믹(Ceramic) 등으로 제작될 수 있다. 상기 재질들은 공정가스, 온도, 압력 등의 공정조건에 의해 그 성질이 변하지 않는 것들이다. 상기 재질로 제작된 핀(38)에 공정진행시 공정가스가 증착될 수 있는데, 이러한 재질들에 증착된 물질은 공정이 진행된 후 유지보수시 쉽게 제거될 수 있다.At this time, the pin 38 is preferably made of a material that is not affected by the process conditions, for example, it can be made of quartz (Quartz), silicon carbide (Silicon Carbide), ceramic (Ceramic) and the like. The materials are those whose properties are not changed by process conditions such as process gas, temperature and pressure. Process gas may be deposited on the fin 38 made of the material during the process, the material deposited on these materials can be easily removed during maintenance after the process.
또한, 그라파이트(40)에 형성된 홀은, 도6의 예와 같이, 웨이퍼(36)를 지지하는 것은 물론 웨이퍼(36)를 이송하는 이송수단(46)이 움직이는 경로(A)를 방해하지 않도록 형성되어야 한다. 즉, 홀들(42)은 도시된 도면의 전후로 움직이는 이송수단(46)의 경로(A) 밖에 형성되어 있음을 볼 수 있다. 그리고, 안정적으로 웨이퍼(36)가 지지될 수 있도록 홀(42, 44)이 형성되는 것이 바람직한데, 예로서 홀들(42, 44)의 거리가 같은 이등변 삼각형을 이루도록 홀(42, 44)이 형성될 수 있다.In addition, the hole formed in the graphite 40 is formed so as not to support the wafer 36 as well as the transfer means 46 for transferring the wafer 36, as shown in the example of FIG. Should be. That is, it can be seen that the holes 42 are formed outside the path A of the conveying means 46 moving back and forth in the figure. In addition, the holes 42 and 44 may be formed to stably support the wafer 36. For example, the holes 42 and 44 may be formed to form an isosceles triangle having the same distance between the holes 42 and 44. Can be.
이상에서 본 발명은 기재된 구체예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정은 첨부된 특허청구범위에 속함은 당연한 것이다.Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical spirit of the present invention, and such modifications and modifications are within the scope of the appended claims.
따라서 본 발명에 의하면, 매엽식의 공정챔버에서 웨이퍼가 소정 높이 유지된 상태로 공정이 진행됨으로서 웨이퍼 전면 뿐만 아니라 후면에도 소정의 막질이 균일하게 증착되는 효과가 있다.Therefore, according to the present invention, the process proceeds while the wafer is held at a predetermined height in the single-leaf process chamber, so that a predetermined film quality is uniformly deposited on both the front surface and the rear surface of the wafer.
웨이퍼를 로딩하기 위한 수단이 별도로 구비되지 않은 상태에서도 웨이퍼가 공정챔버로 제공되어서 설비를 구성하기 위한 비용 및 시간이 절감되는 효과가 있으며, 매엽식으로 공정을 진행한 웨이퍼의 증착두께와 배치식으로 공정을 진행한 웨이퍼의 증착두께가 차이가 나지 않아서 후속 공정진행이 원활하게 이루어지는 효과가 있다.Even if the means for loading the wafer is not provided separately, the wafer is provided to the process chamber, thereby reducing the cost and time for constructing the equipment. Since the deposition thickness of the processed wafer is not different, there is an effect that the subsequent process proceeds smoothly.
Claims (11)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020010035084A KR20020096524A (en) | 2001-06-20 | 2001-06-20 | Wafer holding structure of the processing chamber for fabricating semiconductor devices |
| TW090121894A TW502367B (en) | 2001-06-20 | 2001-09-04 | Apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device |
| US09/983,126 US20020195058A1 (en) | 2001-06-20 | 2001-10-23 | Apparatus for holding a wafer for use in a process chamber for fabricating a semiconductor device |
| JP2002178254A JP2003051458A (en) | 2001-06-20 | 2002-06-19 | Wafer holding device for process chamber for semiconductor device manufacturing |
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| KR1020010035084A KR20020096524A (en) | 2001-06-20 | 2001-06-20 | Wafer holding structure of the processing chamber for fabricating semiconductor devices |
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| US (1) | US20020195058A1 (en) |
| JP (1) | JP2003051458A (en) |
| KR (1) | KR20020096524A (en) |
| TW (1) | TW502367B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110094206A (en) * | 2008-12-11 | 2011-08-22 | 노벨러스 시스템즈, 인코포레이티드 | Load lock and wafer cooling method for cooling the wafer |
| US9835388B2 (en) | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| KR20230094042A (en) * | 2021-12-20 | 2023-06-27 | 주식회사 한화 | Substrate Supporting Apparatus |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7731798B2 (en) * | 2004-12-01 | 2010-06-08 | Ultratech, Inc. | Heated chuck for laser thermal processing |
| JP2012231234A (en) * | 2011-04-25 | 2012-11-22 | Citizen Finetech Miyota Co Ltd | Manufacturing method of oscillator device |
| US9536770B2 (en) * | 2014-01-14 | 2017-01-03 | Lam Research Ag | Method and apparatus for liquid treatment of wafer shaped articles |
| US10694648B2 (en) * | 2017-01-06 | 2020-06-23 | Korvis LLC | System for inserting pins into an article |
| CN113005429A (en) * | 2021-02-26 | 2021-06-22 | 中山德华芯片技术有限公司 | Nested formula graphite plate |
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| JPH06333810A (en) * | 1993-05-26 | 1994-12-02 | Dainippon Screen Mfg Co Ltd | Thermal treatment device |
| JPH07106239A (en) * | 1993-09-29 | 1995-04-21 | Dainippon Screen Mfg Co Ltd | Substrate heating device |
| KR19990024881U (en) * | 1997-12-15 | 1999-07-05 | 구본준 | Wafer Support |
| JP2000100706A (en) * | 1998-09-25 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | Substrate holding device and processing method therefor |
| KR20010001893U (en) * | 1999-06-30 | 2001-01-26 | 김영환 | device for guiding of wafer in semiconductor track mechanism |
| KR20010019833A (en) * | 1999-08-31 | 2001-03-15 | 윤종용 | A type of wafer platen merged with ground pin in a semiconductor manufacturing machine |
-
2001
- 2001-06-20 KR KR1020010035084A patent/KR20020096524A/en not_active Ceased
- 2001-09-04 TW TW090121894A patent/TW502367B/en not_active IP Right Cessation
- 2001-10-23 US US09/983,126 patent/US20020195058A1/en not_active Abandoned
-
2002
- 2002-06-19 JP JP2002178254A patent/JP2003051458A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06333810A (en) * | 1993-05-26 | 1994-12-02 | Dainippon Screen Mfg Co Ltd | Thermal treatment device |
| JPH07106239A (en) * | 1993-09-29 | 1995-04-21 | Dainippon Screen Mfg Co Ltd | Substrate heating device |
| KR19990024881U (en) * | 1997-12-15 | 1999-07-05 | 구본준 | Wafer Support |
| JP2000100706A (en) * | 1998-09-25 | 2000-04-07 | Dainippon Screen Mfg Co Ltd | Substrate holding device and processing method therefor |
| KR20010001893U (en) * | 1999-06-30 | 2001-01-26 | 김영환 | device for guiding of wafer in semiconductor track mechanism |
| KR20010019833A (en) * | 1999-08-31 | 2001-03-15 | 윤종용 | A type of wafer platen merged with ground pin in a semiconductor manufacturing machine |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110094206A (en) * | 2008-12-11 | 2011-08-22 | 노벨러스 시스템즈, 인코포레이티드 | Load lock and wafer cooling method for cooling the wafer |
| US9835388B2 (en) | 2012-01-06 | 2017-12-05 | Novellus Systems, Inc. | Systems for uniform heat transfer including adaptive portions |
| US10347547B2 (en) | 2016-08-09 | 2019-07-09 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| US11075127B2 (en) | 2016-08-09 | 2021-07-27 | Lam Research Corporation | Suppressing interfacial reactions by varying the wafer temperature throughout deposition |
| KR20230094042A (en) * | 2021-12-20 | 2023-06-27 | 주식회사 한화 | Substrate Supporting Apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TW502367B (en) | 2002-09-11 |
| US20020195058A1 (en) | 2002-12-26 |
| JP2003051458A (en) | 2003-02-21 |
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