KR20020053396A - Method for forming SiO2 layer for a semiconductor fabrication process - Google Patents
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- KR20020053396A KR20020053396A KR1020000083025A KR20000083025A KR20020053396A KR 20020053396 A KR20020053396 A KR 20020053396A KR 1020000083025 A KR1020000083025 A KR 1020000083025A KR 20000083025 A KR20000083025 A KR 20000083025A KR 20020053396 A KR20020053396 A KR 20020053396A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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Abstract
산소가 실리콘에 확산되는 공정과 산소가 실리콘 기판과 반응하여 SiO2를 형성하는 공정을 반복하여 10Å 내지 20Å 이하 수준의 산화막을 형성하는 반도체 제조 공정의 SiO2막질 형성 방법에 관한 것으로서, 500℃ 내지 600℃의 온도 분위기에서 산소를 주입시키는 제 1 단계, 질소나 아르곤 가스가 주입된 상태에서 600℃ 이상의 온도 분위기에서 SiO2형성 공정을 진행시키는 제 2 단계, 질소나 아르곤 가스가 주입된 상태에서 500℃ 내지 600℃의 온도 분위기에서 산소를 주입시키는 제 3 단계 및 질소나 아르곤 가스가 주입된 상태에서 600℃ 이상의 온도 분위기에서 SiO2성장 공정을 진행시키는 제 4 단계를 수행하여 산화막이 형성된다.As oxygen is on the SiO 2 film quality method for forming a semiconductor manufacturing step of the process and the oxygen diffusion to the silicon repeating the step of forming the SiO 2 reacts with the silicon substrate to form an oxide film of 10Å to 20Å or less level, 500 ℃ to The first step of injecting oxygen in a temperature atmosphere of 600 ℃, the second step of proceeding to form SiO 2 in a temperature atmosphere of 600 ℃ or more in the state of nitrogen or argon gas is injected, the 500 in a state of nitrogen or argon gas injected An oxide film is formed by performing a third step of injecting oxygen in a temperature atmosphere of from about 500 ° C. to 600 ° C. and a fourth step of performing a SiO 2 growth process in a temperature atmosphere of 600 ° C. or higher in a state in which nitrogen or argon gas is injected.
Description
본 발명은 반도체 제조 공정에 관한 것으로서, 더욱 상세하게는 산소가 실리콘에 확산되는 공정과 산소가 실리콘 기판과 반응하여 SiO2를 형성하는 공정을 반복하여 10Å 내지 20Å 이하 수준의 산화막을 형성하는 반도체 제조 공정의 SiO2막질 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing process, and more particularly, to fabricating a semiconductor film having an oxide film having a level of 10 kV to 20 kV by repeating a process in which oxygen diffuses into silicon and a process in which oxygen reacts with a silicon substrate to form SiO 2 . It relates to a SiO 2 film formation method of the process.
통상, 반도체 소자는 많은 단위 공정을 거쳐서 제조되며, 이들 단위 공정들로써 산화, 식각, 이온주입, 평탄화공정 등이 예시될 수 있다.In general, semiconductor devices are manufactured through a number of unit processes, and examples of these unit processes may include oxidation, etching, ion implantation, planarization, and the like.
이러한 공정들은 반도체 제조 공정이 0.1㎛ 이하 수준의 디자인 룰을 만족할수 있도록 개선이 요구되고 있으며, 특히 산화막을 형성하는 공정은 0.1㎛ 이하의 디자인 룰을 만족시키기 위하여 20Å 이하의 두께로 산화막이 형성되도록 제어되어야 한다.These processes are required to improve the semiconductor manufacturing process to meet the design rule of 0.1㎛ or less level, in particular, the process of forming the oxide film to form an oxide film with a thickness of 20Å or less to satisfy the design rule of 0.1㎛ or less It must be controlled.
종래에는 산화막을 형성하기 위하여 높은 온도(700℃ 이상)에서 산소나 수증기를 유입시켜서 산소를 실리콘과 반응시키는 방법으로 산화막이 형성되고, 그 후 산소가 이미 형성된 산화막을 투과하여 다시 기판의 실리콘과 반응함에 따라서 산화막이 성장되었다.Conventionally, in order to form an oxide film, an oxide film is formed by introducing oxygen or water vapor at a high temperature (above 700 ° C) to react oxygen with silicon, and then penetrates the oxide film in which oxygen is already formed and reacts with silicon on the substrate again. As a result, an oxide film was grown.
이러한 종래의 산화막 형성 방법은 20Å 이하 수준의 균일한 산화막을 얻을 수 없었고, 특히 10Å 이하 수준의 산화막을 형성하는 방법은 개발된 바 없다.In the conventional oxide film forming method, it is not possible to obtain a uniform oxide film having a level of 20 kV or less, and in particular, a method of forming an oxide film of 10 kV or less has not been developed.
이러한 산화막 형성 두께가 제한됨에 따라서 고집접도를 만족하는 반도체 메모리 디바이스의 개발이 어려운 문제점이 있다.As the oxide film formation thickness is limited, it is difficult to develop a semiconductor memory device that satisfies high integration.
본 발명의 목적은 산소를 확산하는 열공정과 SiO2를 형성하는 열공정을 구분하여 반복시킴으로써 20Å 이하 수준의 균일한 산화막을 형성시킴에 있다.An object of the present invention is to form a uniform oxide film having a level of 20 Pa or less by repeating the thermal process of diffusing oxygen and the thermal process of forming SiO 2 .
본 발명의 다른 목적은 분자 단위로 SiO2막질의 형성을 제어하여 10Å 이하 수준의 산화막을 형성시킴에 있다.Another object of the present invention is to control the formation of SiO 2 film on a molecular basis to form an oxide film of 10 Å or less.
도 1 내지 도 4는 본 발명에 따른 반도체 제조 공정의 SiO2막질 형성 방법의 바람직한 실시예를 나타내는 공정도1 to 4 is a process chart showing a preferred embodiment of the SiO 2 film formation method of the semiconductor manufacturing process according to the present invention
본 발명에 따른 반도체 제조 공정의 SiO2막질 형성 방법은 500℃ 내지 600℃의 온도 분위기에서 산소를 주입시키는 제 1 단계, 질소나 아르곤 가스가 주입된 상태에서 600℃ 이상의 온도 분위기에서 SiO2형성 공정을 진행시키는 제 2 단계, 질소나 아르곤 가스가 주입된 상태에서 500℃ 내지 600℃의 온도 분위기에서 산소를 주입시키는 제 3 단계; 및 상기 질소나 아르곤 가스가 주입된 상태에서 600℃ 이상의 온도 분위기에서 SiO2성장 공정을 진행시키는 제 4 단계를 구비하여 SiO2막질을 형성시킨다.In the method of forming a SiO 2 film in the semiconductor manufacturing process according to the present invention, a first step of injecting oxygen in a temperature atmosphere of 500 ° C. to 600 ° C., a step of forming SiO 2 in a temperature atmosphere of 600 ° C. or higher in a state in which nitrogen or argon gas is injected. A second step of advancing the third step of injecting oxygen in a temperature atmosphere of 500 ° C. to 600 ° C. in a state in which nitrogen or argon gas is injected; And by comprising a fourth step of advancing the SiO 2 growth process in the nitrogen or argon gas in the implanted state at least 600 ℃ temperature atmosphere to form an SiO 2 film quality.
여기에서 20Å 이하의 SiO2막질을 형성하기 위하여 상기 제 3 및 제 4 단계가 수회 반복됨이 바람직하다.Herein, it is preferable that the third and fourth steps are repeated several times to form a SiO 2 film having a thickness of 20 kPa or less.
이하, 본 발명의 바람직한 실시예에 대하여 첨부도면을 참조하여 상세히 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
본 발명은 산소의 확산에 필요한 온도가 500℃ 내지 600℃이고, 산소가 실리콘 기판과 반응하여 SiO2를 형성하는 온도가 600℃ 이상으로 다른점을 이용한 것이며, 산화막은 산소를 주입하여 존재하면서 실리콘을 투과하되 기판과 반응은 하지 않는 단계와 아르곤이나 질소 가스 분위기의 고온 상태에서 실리콘 기판과 산소가 반응하여 SiO2를 형성하는 단계를 반복하면서 형성된다. 이때 산화막(SiO2)은 분자단위로 그 형성이 제어된다.According to the present invention, the temperature required for diffusion of oxygen is 500 ° C. to 600 ° C., and the temperature at which oxygen reacts with the silicon substrate to form SiO 2 is different from 600 ° C. or higher. It is formed by passing through but not reacting with the substrate and forming a SiO 2 by reacting the silicon substrate with oxygen in a high temperature state of argon or nitrogen gas atmosphere. At this time, the formation of the oxide film (SiO 2 ) in molecular units is controlled.
본 발명에 따른 실시예는 도 1 내지 도 4와 같은 순서로 이루어질 수 있다.Embodiments according to the present invention may be made in the same order as in FIGS.
먼저, 공정 챔버의 온도를 550℃ 정도로 유지시킨 후 산소를 10초 정도 주입한다. 그러면 도 1과 같이 실리콘 기판(10)에 산소(12)가 존재한다. 이때 산소는 공정 온도 분위기가 SiO2를 형성할 만한 고온이 아니므로 실리콘 기판(10)과 반응하지 않는다. 물론 극소량이 반응될 수 있다.First, the temperature of the process chamber is maintained at about 550 ℃ and oxygen is injected for about 10 seconds. Then, oxygen 12 is present in the silicon substrate 10 as shown in FIG. 1. At this time, oxygen does not react with the silicon substrate 10 because the process temperature atmosphere is not high enough to form SiO 2 . Of course very little can be reacted.
그 후, 공정 챔버의 내부에 아르곤 가스나 질소 가스를 주입하면서 내부 온도를 900℃ 정도로 상승시켜서 10초 정도 공정을 진행한다. 이때 아르곤 가스나 질소 가스는 반응 안정화를 위하여 주입된다.Thereafter, while argon gas or nitrogen gas is injected into the process chamber, the internal temperature is raised to about 900 ° C, and the process is performed for about 10 seconds. At this time, argon gas or nitrogen gas is injected to stabilize the reaction.
그러면, 공정 분위기에 의하여 도 2와 같이 산소(12)와 실리콘 기판(10)이 반응하여 SiO2막질(14)이 형성된다.Then, as shown in FIG. 2, the oxygen 12 and the silicon substrate 10 react with each other to form a SiO 2 film 14.
그 후, 아르곤 가스나 질소 가스 분위기에서 공정 챔버 내부의 온도가 550℃로 조절되고 산소를 약 10초 정도 주입한다.Thereafter, the temperature inside the process chamber is adjusted to 550 ° C. in an argon gas or nitrogen gas atmosphere, and oxygen is injected for about 10 seconds.
그러면 도 3과 같이 주입된 산소는 기판과 반응되지 않고 존재한다.Then, the injected oxygen is present without reacting with the substrate as shown in FIG.
그 후, 다시 아르곤 가스나 질소 가스 분위기에서 공정 챔버 내부의 온도를 900℃ 정도로 조절하고 10초 정도 공정을 진행한다.Thereafter, the temperature inside the process chamber is adjusted to about 900 ° C. in an argon gas or nitrogen gas atmosphere, and the process is performed for about 10 seconds.
그러면, 도 4와 같이 산소(12)와 실리콘 기판(10)이 반응하여 SiO2가 생성되면서 SiO2막질(14)이 성장된다.Then, as illustrated in FIG. 4, the SiO 12 and the silicon substrate 10 react to form SiO 2 , thereby growing the SiO 2 film 14.
이와 같이 SiO2막질(14)이 분자 단위로 형성되며, 이러한 온도 조절의 반복 회수가 증가함에 따라서 SiO2막질(14)의 두께가 증가한다.As such, the SiO 2 film 14 is formed in molecular units, and the thickness of the SiO 2 film 14 increases as the number of repetitions of the temperature control increases.
수 Å 내지 20Å 정도의 SiO2막질을 형성하기 위해서는 상술한 반복 과정이 3회 내지 10회 정도 이루어지며, 짧은 시간에 원하는 초박막의 산화막이 형성될 수 있다.In order to form the SiO 2 film quality of about several kPa to about 20 kPa, the above-described repeating process is performed three to ten times, and an oxide film of a desired ultra-thin film can be formed in a short time.
그러므로, 본 발명에 의하면 0.1㎛ 이하의 디자인 룰에서 요구되는 초박막의산화막이 형성될 수 있어서, 반도체 메모리 디바이스의 고집적화가 용이해질 수 있다.Therefore, according to the present invention, an ultra thin oxide film required by a design rule of 0.1 mu m or less can be formed, so that high integration of the semiconductor memory device can be facilitated.
본 발명에 의하면, 20Å 이하 수준의 균일한 두께의 SiO2막질의 형성이 가능하여 0.1㎛ 이하 수준의 디자인 룰을 만족시켜서 반도체 메모리 디바이스가 고집적화되는 효과가 있다.According to the present invention, it is possible to form a SiO 2 film having a uniform thickness of 20 占 Å or less, which satisfies the design rule of 0.1 占 퐉 or below, thereby increasing the integration of semiconductor memory devices.
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| KR100687410B1 (en) * | 2005-12-28 | 2007-02-26 | 동부일렉트로닉스 주식회사 | Gate oxide film formation method of a semiconductor device |
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| KR100687410B1 (en) * | 2005-12-28 | 2007-02-26 | 동부일렉트로닉스 주식회사 | Gate oxide film formation method of a semiconductor device |
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