KR20020017819A - Image sensor having oxide layer over micro-lens - Google Patents
Image sensor having oxide layer over micro-lens Download PDFInfo
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- KR20020017819A KR20020017819A KR1020000051333A KR20000051333A KR20020017819A KR 20020017819 A KR20020017819 A KR 20020017819A KR 1020000051333 A KR1020000051333 A KR 1020000051333A KR 20000051333 A KR20000051333 A KR 20000051333A KR 20020017819 A KR20020017819 A KR 20020017819A
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
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Abstract
본 발명은 패키지 과정에서 발생하는 파티클의 제거가 용이하고, 백그라인딩 작업이 용이하며, 비반사층(ARC)의 구현이 가능하여 광감지 특성을 개선하는데 적합한 구조를 갖는 이미지센서를 제공하고자 하는 것으로, 이를 위한 본 발명의 이미지센서는 집광을 위한 마이크로렌즈를 갖는 이미지센서에 있어서, 상기 마이크로렌즈 상에 상기 마이크로렌즈의 굴곡을 따라 일정두께로 형성된 질화층; 상기 질화층 상에 형성되어 입사되는 빛의 반사 손실을 억제하기 위한 산화질화층; 및 상기 산화질화층 상에 형성된 평탄화 산화층을 포함하여 이루어짐을 특징으로 한다.The present invention is to provide an image sensor having a structure that is easy to remove the particles generated during the packaging process, easy backgrinding operation, and can implement the anti-reflective layer (ARC) to improve the light sensing characteristics, According to an aspect of the present invention, there is provided an image sensor including a microlens for condensing, the image sensor comprising: a nitride layer formed on the microlens with a predetermined thickness along a bend of the microlens; An oxynitride layer formed on the nitride layer to suppress reflection loss of incident light; And a planarization oxide layer formed on the oxynitride layer.
Description
본 발명은 이미지센서(image sensor) 및 그 제조방법에 관한 것으로, 특히마이크로렌즈(microlens)의 손상을 최소화하기 위한 이미지센서 및 그 제조방법에 관한 것이다.The present invention relates to an image sensor and a method for manufacturing the same, and more particularly, to an image sensor and a method for manufacturing the same for minimizing damage to microlens.
이미지센서는 빛을 감지하는 광감지 부분과 감지된 빛을 전기적 신호로 처리하여 데이타화 하는 로직회로 부분으로 구성 되어있다. 광감도를 높이기 위하여 전체 이미지센서 소자에서 광감지 부분의 면적이 차지하는 비율(Fill Factor)을 크게 하려는 노력이 진행되고 있지만, 근본적으로 로직회로 부분을 제거할 수 없기 때문에 제한된 면적하에서 이러한 노력에는 한계가 있다. 따라서 광감도를 높여주기 위하여 광감지 부분 이외의 영역으로 입사하는 빛의 경로를 바꿔서 광감지 부분으로 모아주는 집광기술이 마이크로렌즈 기술이다.The image sensor consists of a light sensing part that detects light and a logic circuit part that processes the detected light into an electrical signal to make data. Efforts have been made to increase the fill factor of the area of the photo-sensing part in the overall image sensor device to increase the light sensitivity. However, this effort is limited under a limited area because the logic circuit part cannot be removed. . Therefore, the microlens technology is a condensing technology that changes the path of light incident to a region other than the light sensing portion and collects the light sensing portion to increase the light sensitivity.
도1은 종래기술에 따른 이미지센서 구조를 보여주는 개략적인 단면도이다.1 is a schematic cross-sectional view showing an image sensor structure according to the prior art.
도1을 참조하면, 포토다이오드(PD)(101) 상에 절연층(102)이 형성되고, 절연층(102) 상에 소자 보호막(passivation)(103)이 형성되며 그 위로 칼라필터어레이(CFA)(104)가 형성된다. 칼라필터어레이(104)상에는 OCM(over coating material)층(105)이 형성되고 그 위로 마이크로렌즈(ML)(106)가 형성된다.Referring to FIG. 1, an insulating layer 102 is formed on a photodiode (PD) 101, a device passivation 103 is formed on the insulating layer 102, and a color filter array (CFA) is disposed thereon. 104 is formed. An over coating material (OCM) layer 105 is formed on the color filter array 104 and a microlens (ML) 106 is formed thereon.
그러나 상기한 구조의 종래의 이미지센서는 도1의 구조에서 패키지가 이루어지게 되는 바, 마이크로렌즈는 포토레지스트 성분으로서 점성이 크고 외부환경에 영향을 받기 쉬운 물질이기 때문에, 패키지 과정에서 발생하는 알루미늄(Al) 등의 파티클(particle)에 의한 수율(yield) 손실을 피할 수 없으며 그 제거방법 또한 마땅한 해결책이 없는 상황이다.However, the conventional image sensor having the above-described structure is packaged in the structure of FIG. 1, since the microlens is a material having a high viscosity as a photoresist component and susceptible to the external environment. Yield loss due to particles such as Al) cannot be avoided, and the removal method also has no suitable solution.
또한, 마이크로렌즈의 성분 및 그 타포로지(topology) 때문에백그라인딩(gackgrinding)을 수행할 수 없는 단점이 있다.In addition, there is a disadvantage in that backgrinding cannot be performed due to the components of the microlens and its topology.
아울러, 광전송 특성의 관점에서는 공기중에서 약 1.6 정도의 굴절률을 가진 마이크로렌즈로의 입사광의 반사 손실도 무시할 수 없으며 이의 보상을 위한 비반사층의 구현도 어려운 실정이다.In addition, in terms of light transmission characteristics, the reflection loss of incident light to the microlens having a refractive index of about 1.6 in air cannot be ignored, and it is difficult to implement an anti-reflective layer for compensation thereof.
본 발명은 패키지 과정에서 발생하는 파티클의 제거가 용이하고, 백그라인딩 작업이 용이하며, 비반사층의 구현이 가능하여 광감지 특성을 개선하는데 적합한 구조를 갖는 이미지센서를 제공하는데 목적이 있다.It is an object of the present invention to provide an image sensor having a structure suitable for removing particles generated in a packaging process, easy backgrinding operation, and realization of an anti-reflective layer to improve light sensing characteristics.
도1은 종래기술에 따른 이미지센서 구조를 보여주는 개략적인 단면도.1 is a schematic cross-sectional view showing the structure of an image sensor according to the prior art.
도2는 본 발명에 따른 이미지센서 구조를 보여주는 개략적인 단면도.Figure 2 is a schematic cross-sectional view showing the structure of the image sensor according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
201 : 포토다이오드 202 : 절연층201: photodiode 202: insulating layer
203 : 소자 보호막 204 : 칼라필터어레이203: element protective film 204: color filter array
205 : OCM층 206 : 마이크로렌즈205: OCM layer 206: microlens
207 : 질화층 208 : 산화질화층207: nitride layer 208: oxynitride layer
209 : 평탄화 산화층209: planarized oxide layer
상기 목적을 달성하기 위한 본 발명의 이미지센서는, 집광을 위한 마이크로렌즈를 갖는 이미지센서에 있어서, 상기 마이크로렌즈 상에 상기 마이크로렌즈의 굴곡을 따라 일정두께로 형성된 질화층; 상기 질화층상에 형성되어 입사되는 빛의 반사 손실을 억제하기 위한 산화질화층; 및 상기 산화질화층 상에 형성된 평탄화된 산화층을 포함하여 이루어짐을 특징으로 한다.An image sensor of the present invention for achieving the above object, the image sensor having a microlens for condensing, comprising: a nitride layer formed on the microlens with a predetermined thickness along the curvature of the microlens; An oxynitride layer formed on the nitride layer to suppress reflection loss of incident light; And a planarized oxide layer formed on the oxynitride layer.
이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. do.
도2는 본 발명의 바람직한 실시예에 따른 이미지센서의 구조를 개략적으로 나타낸 것이다. 보호막 하부의 소자 구조는 본 발명과 밀접한 관련만 있는 포토다이오드만을 도시하였고, 기타 트랜지스터 등의 소자는 도시되어 있지 않다.2 schematically shows the structure of an image sensor according to a preferred embodiment of the present invention. The device structure under the protective film only shows a photodiode which is closely related to the present invention, and other devices such as transistors are not shown.
도2를 참조하면, 광감지소자인 포토다이오드(PD)(201) 상에 절연층(202)이 형성되고, 절연층(202) 상에 소자 보호막(passivation)(203)이 형성되며 그 위로 칼라필터어레이(CFA)(204) 및 OCM(over coating material)층(205)이 형성된다.Referring to FIG. 2, an insulating layer 202 is formed on a photodiode (PD) 201, which is an optical sensing element, and a device passivation 203 is formed on the insulating layer 202, and a color is formed thereon. A filter array (CFA) 204 and an over coating material (OCM) layer 205 are formed.
상기 포토다이오드는 외부로부터 입사되는 빛을 받아 광전하를 생성하는 소자이다. 상기 절연층(202)은 금속배선전에 형성되는 절연층, 금속배선간 절연층 등 통상 다층의 산화막으로 구성할 수 있으며, 소자 보호막(203)은 산화막 또는 산화막/질화막으로 구성 가능하다.The photodiode is a device generating photocharges by receiving light incident from the outside. The insulating layer 202 may be formed of a conventional multilayer oxide film such as an insulating layer formed before metal wiring, an insulating layer between metal wirings, and the device protective film 203 may be formed of an oxide film or an oxide film / nitride film.
칼라필터어레이(204)는 통상 레드(Red), 블루(Blue), 및 그린(Green) 칼라필터가 단위화소에 대응되어 어레이되며, 상기 칼라필터어레이는 단차를 가지기 때문에 이를 평탄화하기 위하여 또는/및 광투과도 향상을 위하여 OCM층이 적용된다. OCM층은 통상적으로 포토레지스트를 사용한다.The color filter array 204 is typically arranged in which red, blue, and green color filters correspond to unit pixels, and the color filter array has a step to flatten it and / or OCM layer is applied to improve light transmittance. The OCM layer typically uses photoresist.
이어, 상기 OCM층(205) 상에 마이크로렌즈(206)가 형성되어 있다. 이때 종래와는 다른게 상기 마이크로렌즈의 CD(critical dimension)를 작게 형성한다. 즉 예컨대 0.5㎛ CMOS 이미지센서의 경우 CD를 종래의 약 7.6㎛에서 약 6.6㎛로 약 1㎛ 줄인다.Subsequently, a microlens 206 is formed on the OCM layer 205. At this time, unlike the conventional method, the CD (critical dimension) of the microlens is small. For example, in the case of a 0.5 μm CMOS image sensor, the CD is reduced by about 1 μm from about 7.6 μm to about 6.6 μm.
이어서, 상기 마이크로렌즈(206) 상에 약 1㎛ 두께의 질화막(207)을 형성한다. 이어 비반사층(ARC : anti reflective coating)으로서산화질화막(oxynitride)(208)을 형성하고 그 상부에 약 5㎛ 이상의 평탄화 산화막(209)을 형성한다. 평탄화 산화막(209)은 후속 패키지에서 쉐딩효과(shading effect)를 고려하여 소자와 실링(sealing) 글래스 사이의 허용거리에 해당하는 정도까지 그 두께를 설정할 수 있다. 평탄화 산화막의 형성 방법은 산화막 증착 후 에치백 또는 화학적기계적연마 등을 방법을 사용하여 평탄화한다.Subsequently, a nitride film 207 having a thickness of about 1 μm is formed on the microlens 206. Subsequently, an oxynitride (208) is formed as an anti-reflective layer (ARC), and a planarized oxide film 209 of about 5 μm or more is formed thereon. The planarization oxide film 209 may be set to a thickness corresponding to an allowable distance between the device and the sealing glass in consideration of the shading effect in the subsequent package. The method of forming the planarized oxide film is planarized by etching, etching back or chemical mechanical polishing after deposition of the oxide film.
질화막(207)은 마이크로렌즈(206)의 형상을 따라 굴곡지게 형성되어 입사되는 빛을 포커싱(focusing) 해주는 역할을 수행하는 렌즈의 기능을 한다. 산화질화막(208)은 질화층(207)의 상대적으로 큰 굴절률로 기인한 입사광의 반사 손실을 막기 위한 것으로서, 블루 파장 대역에서의 반사손실을 최소화하기 위해 0.45㎛ 기준파장으로 그의 두께 및 굴절률 등을 설계한다. 이는 이미지센서가 통상 단파장인 블루 파장에 대하여 광감도가 좋지 않기 때문에 이를 고려한 것이다.The nitride film 207 is formed to be bent along the shape of the microlens 206 to function as a lens for focusing incident light. The oxynitride film 208 is used to prevent reflection loss of incident light due to the relatively large refractive index of the nitride layer 207. To minimize the reflection loss in the blue wavelength band, the thickness and refractive index of the oxynitride layer 208 is 0.45 μm. Design. This is taken into account because the light sensitivity of the image sensor is not good for the blue wavelength which is usually short wavelength.
상기한 구조의 이미지센서는 소자의 최상부층이 마이크로렌즈가 아닌 산화막이기 때문에 이후의 공정에서 마이크로렌즈의 손상을 최소화하고 패키지 과정에서 발생되는 파티클의 제거를 용이하게 하며, 소자의 최상부층이 평탄화되어 있으므로 백그라인딩 작업이 용이하다. 또한, 프로브 수율(probe yield)의 개선에 기여할 수 있을 뿐만 아니라 무엇보다도 패키지 후의 최종 테스트에서의 화이트 페일(white fail)로 인한 대표적인 수율 손실을 막아줄 수 있다.Since the uppermost layer of the device is an oxide film rather than a microlens, the image sensor having the above-described structure minimizes damage to the microlens in a subsequent process and facilitates the removal of particles generated during the packaging process, and the topmost layer of the device is flattened. Therefore, backgrinding is easy. In addition, it can not only contribute to the improvement of probe yield, but above all can prevent the typical yield loss due to white fail in the final test after package.
그리고, 이와 같은 구조에 기인하여, 광전송의 특성 저하를 질화막으로 렌즈화하여 이미지센서의 필 펙터(Fill factor)를 유지시켜 주는 동시에, 비반사층을 추가하여 질화막 계면에서 입사광의 반사 손실을 막아주고 공기중에서 입사되는 광의 반사손실이 줄어든다. 즉, 종래의 마이크로렌즈(포토레지스트)는 굴절률 n=1.6인 반면에 산화막은 굴절률 n=1.46 이므로 빛이 상대적으로 저 굴절률 물질로 입사됨에 따라 광손실이 줄어들게 된다.In addition, due to such a structure, the degradation of light transmission characteristics is formed into a nitride film to maintain the fill factor of the image sensor, and an anti-reflective layer is added to prevent reflection loss of incident light at the nitride film interface and to prevent air. The reflection loss of the incident light is reduced. That is, since the conventional microlens (photoresist) has a refractive index n = 1.6 while the oxide film has a refractive index n = 1.46, light loss is reduced as light enters a relatively low refractive index material.
따라서, 본 발명의 적용으로 이미지센서의 광전송 특성은 종래에 대비되어 그대로 유지되거나 좋아지며, 패키지 수율의 두드러지는 개선을 기대할 수 있고, 더욱이 소자의 퇴상부층이 마이크로렌즈가 아니고 산화막이기 때문에 카메라렌즈의 원 패키지(one package)화 공정에 적용할 수 있는 등 많은 응용분야를 찾을 수 있다.Therefore, with the application of the present invention, the optical transmission characteristics of the image sensor are maintained or improved as compared to the conventional one, and a remarkable improvement in package yield can be expected, and furthermore, since the recessed part layer of the device is an oxide film instead of a microlens, Many applications are found, including those that can be applied to one-package processes.
본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.
본 발명은 기존의 이미지센서에서 중요한 문제점으로 여겨지던 마이크로렌즈의 손상과 프로브 테스트 이후 패키지 어셈블리(assembly) 과정에서 발생하는 알루미늄(Al) 등의 파티클 등에 기인한 수율 저하의 원인을 새로운 소자 구조의 도입으로 방지한다. 특히 광 특성의 저하없이 패키지에서의 마지막 테스트(package final test)의 수율을 현저하게 개선하는 효과를 발휘한다.The present invention introduces a new device structure to the cause of yield degradation due to microlens damage and particles such as aluminum (Al) that occur during package assembly after probe testing. To prevent. In particular, it has the effect of remarkably improving the yield of a package final test in a package without degrading an optical characteristic.
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| KR1020000051333A KR100670536B1 (en) | 2000-08-31 | 2000-08-31 | Image sensor with planarization oxide layer on top of microlens |
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| KR1020000051333A KR100670536B1 (en) | 2000-08-31 | 2000-08-31 | Image sensor with planarization oxide layer on top of microlens |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485644B1 (en) * | 2002-08-12 | 2005-04-27 | 동부아남반도체 주식회사 | Method for manufacturing an image sensor |
| KR100718779B1 (en) * | 2005-12-28 | 2007-05-16 | 매그나칩 반도체 유한회사 | Image sensor and its manufacturing method |
| KR100733265B1 (en) * | 2005-12-28 | 2007-06-27 | 동부일렉트로닉스 주식회사 | Image sensor module and its manufacturing method |
| KR100752163B1 (en) * | 2005-11-15 | 2007-08-24 | 동부일렉트로닉스 주식회사 | Manufacturing Method of CMOS Image Sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3166199B2 (en) * | 1990-05-16 | 2001-05-14 | 日本電気株式会社 | Solid-state imaging device and method of manufacturing the same |
| JPH04259256A (en) * | 1991-02-14 | 1992-09-14 | Olympus Optical Co Ltd | Solid state image sensor |
| JP2000066190A (en) * | 1998-08-25 | 2000-03-03 | Toppan Printing Co Ltd | Color filter substrate for liquid crystal display |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485644B1 (en) * | 2002-08-12 | 2005-04-27 | 동부아남반도체 주식회사 | Method for manufacturing an image sensor |
| KR100752163B1 (en) * | 2005-11-15 | 2007-08-24 | 동부일렉트로닉스 주식회사 | Manufacturing Method of CMOS Image Sensor |
| KR100718779B1 (en) * | 2005-12-28 | 2007-05-16 | 매그나칩 반도체 유한회사 | Image sensor and its manufacturing method |
| KR100733265B1 (en) * | 2005-12-28 | 2007-06-27 | 동부일렉트로닉스 주식회사 | Image sensor module and its manufacturing method |
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