KR20020015796A - Apparatus For Treating Perfluoro Compound Gas - Google Patents

Abstract

An apparatus capable of treating perfluorinated compound gas with high efficiency is disclosed. The apparatus is provided at the end of the reactor and the outer container and the reactor having an insulating inner container and a cylindrical outer container into which the inner container is inserted and formed with a space for flowing the gas to be processed therein and bent at a predetermined interval. It is provided with a pair of flanges for fixing them and sealing them inside. In addition, the coil is wound around the outer wall of the outer container at a predetermined interval, and a control for controlling the application of high frequency power according to the high frequency power supply device for applying high frequency power to the coil and the presence or absence of perfluorinated compound gas. A device is included. In particular, the perfluorinated compound gas that is discharged during the process of manufacturing a semiconductor device and causes global warming can be easily processed with high efficiency.

Description

Apparatus For Treating Perfluoro Compound Gas

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a treatment apparatus for perfluorinated compound gas, and more particularly, to an apparatus capable of easily treating a perfluorinated compound gas having a long atmospheric residence time and causing global warming with high efficiency.

Perfluorinated compound gases exhibit high global warming potential (GWP) due to their strong infrared absorption and long atmospheric residence time. These perfluorinated compound gases are mainly used in performing a chemical vapor deposition (CVD) process or plasma etching process for forming a thin film using a vacuum during the process for manufacturing a semiconductor device. However, since they are not consumed in the whole process, unreacted gas is often left, and in addition, there are cases where secondary gas is generated. In some cases, the source gas is discharged from the vacuum pump as it is.

The GWP and atmospheric residence time of representative perfluorinated compound gases are shown in Table 1 below. The strongest binding force among these gases, CF ₄ (CF binding energy is 112 to 116 Kcal / mol), has an atmospheric residence time of about 50000 years, which begins to decompose by an energy of 12.5 eV and more than 35 eV. It is known that complete decomposition occurs.

Global warming gas GWP (100ITH) Atmospheric retention time (year) CO ₂ One 50 to 200 CF ₄ 6500 50000 C ₃ F ₈ 7000 2600 C ₂ F ₆ 9200 10000

When these perfluorinated compounds are released into the atmosphere, they cause air pollution such as global warming and ozone layer destruction. Many countries are working to reduce emissions of perfluorinated compounds that have a significant impact on global warming, and several countries have joined the Kyoto Convention. Participating countries have agreed to reduce a certain amount of perfluorinated gas by 2008-2012, and the World Semiconductor Council (WSC) has declared a 10% reduction in 1995 emissions by 2010.

Efforts have been made to reduce the emissions of perfluorinated compounds. Conventional methods include alternative gas development, reduction of gas emissions by optimization of processes, capture / recycle methods, and gas decomposition by treatment equipment. Method and the like. In the process for manufacturing semiconductor devices, in the CVD process, the process optimization for reducing the emission and the development of alternative gas have made significant advances to reduce the amount of the exhaust gas, while the etching process has a strict requirement for the influence of the process. Due to the large amount of exhaust gas is still required to develop an efficient removal method for this.

Thus, a combustion decomposition method, a catalytic decomposition method, a plasma decomposition method and the like have been developed and known as a perfluorinated compound treatment method. The combustion decomposition method decomposes a perfluorinated compound gas using a high temperature of 1200 ° C. or higher, and such a high temperature operating environment is produced by injecting hydrogen gas into a combustion state while heating the temperature of the heating element to 1000 ° C. At this time, the perfluorinated compound flows into the high temperature reactor and decomposition occurs.

However, in the case of the combustion decomposition method, secondary products such as NOx, SOx, etc. are generated in the combustion process, and there is a problem that post-treatment of these secondary products is required. In addition, there is a problem in that it is necessary to periodically replace the heating element and the power consumption to maintain a high temperature.

Catalytic decomposition is a method in which the discharged perfluorinated compound gas is passed through water and then introduced into a tube filled with a catalyst heated to 300 to 800 ° C. to be decomposed by a catalyst in an air and water environment. However, this catalytic decomposition method has to be preceded by the catalyst development for each gas, and has the disadvantage that the treatment for the unknown mixed gas is unclear. In addition, there is a problem that a periodic replacement of the catalyst and a solution to the problem of clogging of the pipe due to the generation of particulates in the gas pipe must be preceded.

Plasma decomposition is a method of treating perfluorinated compound gas by changing the exhaust gas into a material that can be easily treated using high and low temperature plasma. Plasma decomposition is suitable for exhaust gas treatment in the case of high temperature plasma, but has the disadvantage of large power loss due to high temperature and large size of the device.

In the low temperature plasma, especially the high-frequency inductively coupled plasma treatment method, the plasma density and energy are significantly decreased as the size of the plasma reactor increases according to the processing capacity of the gas, thereby significantly reducing the throughput for the perfluorinated compound gas. there is a problem. In addition, the lifetime of the reactor is extremely short due to the etching of the reactor inner wall by the ions in the plasma. In order to reduce the etching rate of the etching reaction and increase the treatment rate of the perfluorinated compound gas, a treatment method using a decomposition accelerator such as steam, hydrogen, and oxygen at low plasma discharge power has been developed.

However, the use of decomposition accelerators raises the pressure in the semiconductor manufacturing process, and the use of hydrogen or steam decomposition promoters produces HF compounds which lead to corrosion of the semiconductor process pump. In addition, since the ionization reaction of the plasma does not proceed completely due to the short process time, it is difficult to completely process the perfluorinated compound gas.

In order to solve this problem, Japanese Patent Application Laid-Open No. Hei 11-76740 discloses an apparatus for treating organic fluorine-based exhaust gas using inductively coupled plasma having high efficiency. According to such an apparatus, the perfluorinated compound gas can be changed into a compound which can be easily treated, thereby effectively treating it. However, there is a problem that the efficiency is low because the gas is discharged in a state that the ionization reaction in the plasma reactor does not sufficiently occur due to the short treatment time. For example, the time during which the perfluorinated compound gas is introduced during the semiconductor manufacturing process is less than 1 minute. In particular, in the case of the plasma etching process, since the gas is introduced in less than 20 seconds, it is not easy to induce sufficient reaction in the reactor.

In addition, the use of a decomposition accelerator may cause a rapid rise in pressure in the pipe, which may result in an instantaneous backflow of gas. This may cause fatal problems in the semiconductor manufacturing process.

Therefore, in order to solve the above problems, the present invention provides a device that can supplement and improve the problems of the conventionally introduced method in the treatment of perfluorinated compound gas and can treat the gas with high efficiency without using a decomposition accelerator. I would like to present.

Another object of the present invention is to provide a method in which the above-described device can be applied to equipment for manufacturing a semiconductor device.

1 is a schematic diagram of an apparatus for treating perfluorinated compound gas according to an embodiment of the present invention.

FIG. 2 is a schematic front view of the reactor portion and the flange portion of the apparatus shown in FIG. 1, shown in partial cross section for one flange portion. FIG.

FIG. 3 is a schematic front view of the reactor portion and the flange portion of the apparatus shown in FIG. 1, shown in cross section for the reactor portion. FIG.

4 is a front view of the reactor portion and the flange portion of the perfluorinated compound gas treatment apparatus according to another embodiment of the present invention, which is shown in cross-sectional view of the reactor portion.

Figures 5a to 5e are schematic views showing the reaction mechanism of the gas treated when treating the perfluorinated compound gas by the device according to the present invention, Figure 5d is for the case of using a wet apparatus, Figure 5e is a dry For the case of using the device.

6A and 6B are mass spectrometry spectra for before and after plasma reaction 6a and 6b of CF ₄ gas in an apparatus according to one embodiment of the invention.

7A and 7B are mass spectrometry spectra for before and after plasma reaction 7a and 7b of C ₄ F ₈ gas in an apparatus according to one embodiment of the invention.

<Explanation of symbols for the main parts of the drawings>

20a, 20b: first and second flanges 29: coil

30: reactor 31: corrugated container

32: external device 40: matching network

50: high frequency power supply device 60: control device

In order to achieve the above object, in the present invention

A reactor including an insulating inner container having a space in which a gas to be processed flows and having a bent at a predetermined interval, and a cylindrical outer container into which the inner container is inserted;

A pair of flanges provided at the ends of the inner container and the outer container to fix them and seal the inside thereof;

A coil wound at predetermined intervals along an outer wall of the outer container;

A high frequency power supply device for applying high frequency power to the coil; And

Provided is a treatment apparatus for perfluorinated compound gas, including a control device for controlling the application of high frequency power in accordance with the presence of the gas.

Preferably, the inner container and the outer container are made of a quartz tube, and in particular, the inner container is a corrugated quartz tube having a plurality of corrugations or a spiral quartz tube having a plurality of spiral grooves so as to delay the flow of gas. Do.

Another object of the present invention described above is achieved by a method of using the above-described device for the treatment of perfluorinated compound gas discharged from a CVD process and / or a plasma etching process for the manufacture of a semiconductor device or a liquid crystal display device (LCD). do.

In the present invention, particularly in the treatment of perfluorinated compound exhaust gas, which is widely used in various processes in the semiconductor industry, using a high frequency inductively coupled plasma method, the exhaust gas is used in the reactor by using a curved reactor such as a pleated reactor or a spiral reactor. It provides a device that can extend the residence time and thereby increase the treatment efficiency of the exhaust gas, and prevent breakage of the reactor, which may occur due to the etching of the reactor by plasma.

Hereinafter, the detailed structure of the perfluorinated compound gas treatment apparatus according to the present invention, its operation principle, and the gas treatment process using the same will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram of an apparatus for treating perfluorinated compound gas according to an embodiment of the present invention. The apparatus includes largely the first and second flanges 20a and 20b, a reactor 30 provided therebetween, a discharge coil 29 installed to spirally wind the outer wall of the reactor, and a matching network; 40), the high frequency power supply device 50, and the control device 60 for controlling the whole decomposition processing apparatus.

The gas to be treated flows in the A direction of the first flange 20a and passes through the inside of the reactor 30 and then discharges in the B direction of the second flange 20b. The gas to be treated in this device is a compound consisting of carbon and fluorine such as CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , C ₅ F ₈ , carbon such as CHF ₃ , CH ₂ F ₂ , Compounds containing fluorine and hydrogen and the like are mainly perfluorinated compound gases emitted during the manufacturing process of semiconductor devices.

The matching network 40 provided between the discharging coil 29 and the high frequency power supply device 50 is provided to match the impedance between them, and in order to reduce the loss of power applied from the power supply device, the coil ( 29) and integrated. The matching network 40 allows the plasma to be generated according to the load fluctuation (pressure change) of the plasma reactor and the short semiconductor processing time using an automatically variable capacitor.

FIG. 2 shows a schematic front view of the reactor part and the flange part of the apparatus shown in FIG. 1, with one flange part being shown in partial sectional view. In particular, the structure of the second flange 20b and the coupling relationship between the second flange 20b and the outer container 31 and the inner container 32 are shown in detail, which will be described in detail.

Since the inside of the reactor 30 in which the plasma reaction occurs is to maintain a low pressure state through which the inflow and outflow of the gas is made through both sides of the reactor 30 to perform this function, preferably aluminum, stainless steel, etc. A pair of flanges 20a and 20b made of a metal material is provided. Since the two flanges 20a and 20b have the same structure, only the second flange 20b shown in the sectional view will be described with respect to the structure thereof. Also, for convenience, the inner container 32 is pleated but is shown in a cylindrical shape in FIG. 2.

The second flange 20b is formed with a first accommodating groove 21a for accommodating the inner container 32 and a second accommodating groove 21b for accommodating the outer container 31. The inner container 32 is formed longer than the outer container 31 to be easily inserted into the flange. In addition, a circular rubber ring is inserted between the second flange 20b and the reactor 30 in order to completely seal and maintain a low pressure state.

Between the inner container 32 and the second flange 20b, first and second rubber rings 22a and 22b and first metal rings 23a are provided between them to prevent overlap between them. Between the outer container 31 and the second flange 20b, third and fourth rubber rings 22c and 22d and second metal rings 23b provided therebetween to prevent overlapping are inserted. . The metal ring can be made of stainless steel or aluminum.

In this way, by inserting a rubber ring between the inner container and the outer container (31, 32) and the flange (20b) and connecting them using a clamp, it is possible to obtain an effect that is almost completely sealed without a separate coupling member. Not only can it be kept at a low pressure, but it can also prevent the leakage of process gas. If the flange is bonded to the reactor using a general adhesive without using a rubber ring, there is a risk of cracking if the plasma reaction is repeatedly performed because of the difference in thermal expansion rate therebetween. After all the above-mentioned rings are combined, the flange cover 27 made of aluminum is combined with the flanges 20a and 20b using bolts to fix the plasma reactor 30 to complete the assembly between the flange and the reactor 30. do.

In addition, a predetermined passage is provided inside the flange to prevent the rubber ring from being damaged due to the temperature rise due to the heat generation during the plasma decomposition treatment, and the cooling water flows. That is, in the drawing, the outer surface of the second flange 20b is provided with a cooling groove 25 through which cooling water can flow. The cooling water cover 26 formed on the upper side of the cooling groove 25 and made of stainless steel or aluminum and the fifth and sixth rubber rings 24a and 24b provided on both left and right sides of the cooling groove 25 are provided with cooling water. When supplied, it serves to seal the leak. Upper and lower portions of the first flange 20a are provided with a coolant inlet 28a for introducing coolant in the C direction and a coolant outlet 28b for discharging the coolant in the D direction. The cooling groove 25 may be formed in the outer surface of the flange as shown in Figure 2 but if the structure that can perform the function may be formed anywhere in the flange and any shape without particular limitation. .

The coils for discharge 29 were wound around the central portion outside the plasma reactor 30 configured as described above at regular intervals. The coil 29 was installed to have an interval of about 3 to 5mm with the outer container 31, and the number of winding thereof is made empirically. As the discharge coil 29, a metal pipe in the form of a hollow pipe was used. That is, the hollow part 29a is formed in the coil 29 so that the cooling water flows in order to reduce the change in the pressure according to the reactor pressure and the type of gas. Cooling water introduced in the E direction flows along the hollow portion 29a and is discharged in the F direction. Preferably, the cooling grooves formed in each of the first and second flanges 20a and 20b and the hollow portion 29a formed in the coil 29 are connected to each other in series to form a single passage. In addition, in order to minimize the surface resistance of the coil 29, the outer surface of the coil 29 is preferably plated with gold.

FIG. 3 shows a schematic front view of the reactor part and the flange part of the apparatus shown in FIG. 1, with the reactor part shown in cross section.

The reactor 30 is formed in the form of a double tube of the inner container 32 and the outer container 31. It is curved in order to maximize the residence time of the perfluorinated compound gas in the cylindrical outer container 31, but has a form in which the inner container 32 made of a corrugated shape is inserted. In order to reduce the etch rate of the reactor by the double cylindrical quartz tube was installed outside the corrugated quartz tube. As a material of the plasma reactor, a quartz tube of SiO ₂ component having a low dust formation and a low etching rate was used in etching by plasma. Although ceramic materials having excellent hardness and strength are often used, this is because in the present invention, since severe etching may occur at the place where the reactor is in contact with the plasma when plasma is generated, a relatively low etch rate quartz tube is used. .

The device is designed to allow a sufficient ionization reaction to occur for a delayed time in the reactor even with a short inflow time of the perfluorinated compound gas to be treated by using a corrugated quartz tube as an inner container of the plasma reactor. As a result, the wrinkles of the inner container 32 are formed as many as possible, the height (h) of the wrinkles is as high as possible, and the spacing (d) between the wrinkles is as narrow as possible so that a large number of wrinkles are severely in close contact. Forming would be advantageous for extending the flow time of the gas. However, in consideration of the size of the container and the ease of manufacture, etc., it is to be manufactured in an appropriate form. Accordingly, in addition to manufacturing the inner container in the form of wrinkles as shown in FIG. 3, as long as it can give a certain form of curvature, it may be formed without particular limitation, such as a spiral.

Figure 4 shows a front view of the reactor portion and the flange portion of the perfluorinated compound gas treatment apparatus according to another embodiment of the present invention. The reactor portion is shown in cross section. In the figure it can be seen that the inner container 34 is formed in a spiral, in which case, when the processing gas is introduced into the reactor, the gas will proceed while forming a vortex along the spiral groove. This will slow the rate of progress of the gas and allow sufficient reaction to occur. The corrugated or spiral inner container may be prepared by first preparing a corrugated or spiral mold and then injecting and curing a liquid quartz raw material into the mold of the mold. Such a container is installed to be exchangeable since it is consumed by reacting with the perfluorinated compound gas by plasma.

Hereinafter, a mechanism in which the gas is decomposed by the apparatus according to the present invention will be described.

5a to 5e schematically illustrate the reaction mechanism of the gas treated when treating the perfluorinated compound gas by the apparatus according to the present invention as described above.

Referring to FIG. 5A, the emitted perfluorinated compound gas is illustrated in a molecular structure. The gas shown is CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , which is for illustrative purposes and may be applied to other gases in the same manner.

Referring to FIG. 5B, when the gas as shown in FIG. 5A is introduced into the inner container of the curved reactor and electric power is applied to the discharge coil in the high frequency power supply by the control from the control device, the introduced gas is filled in the inner container. The reaction is caused by a high-energy plasma to generate radicals, ions, and the like.

Referring to FIG. 5C, the generated radicals, ions, and the like react with the SiO ₂ component of the reactor to form compounds such as F ₂ , COF ₂ , CO ₂ , and SiF ₄ as shown. In other words, carbon and fluorine, which are the main components of the perfluorinated compound gas, react with silicon and oxygen in the reactor, respectively, to form a compound that is easy to process. The compounds thus formed can be easily processed by wet or dry processing equipment.

Referring to FIG. 5D, when the compound shown in FIG. 5C is treated using a wet apparatus, it is performed by bubbling the gas discharged into water. Through this treatment, the compound produced in FIG. 5C is obtained as a harmless component such as H ₂ O, O ₂ , CO _2, and the like.

Referring to FIG. 5E, the compound produced in FIG. 5C is treated by using a dry apparatus. This is to remove the gas by passing through the solid adsorbent to be adsorbed on the solid to remove the formed gas, such as SrF ₂ , ZnF ₂ , CuF ₂ depending on the components of the adsorbent.

Hereinafter, the process of treating the exhaust gas using the apparatus according to the present invention will be described in detail. It will be described using the apparatus according to the first embodiment of the present invention shown in Figs.

First, when the perfluorinated compound gas is introduced into the first flange 20a along the A direction, the plasma reactor is first maintained at a low pressure of 0.001 to 1 torr, and the high frequency power supply device 50 is controlled by a signal input from the control device 60. ) To apply the high frequency power to the coil (29). At this time, the matching network 40 serves to efficiently supply the power supplied from the high frequency power supply device 50 to the reactor.

The time that the perfluorinated compound gas is introduced during the manufacture of the semiconductor device is not continuous and does not flow into the inflow stage of other process gases such as oxygen, nitrogen, argon, etc., so that the perfluorinated compound is introduced into the reactor 30. It was to control to generate a high frequency plasma only when introduced into the interior. That is, the control device 60 recognizes the signal of the air valve attached to the pipe into which the perfluorinated compound is introduced, and determines whether the valve is opened or closed, thereby determining whether the perfluorinated compound is introduced into the reactor and applying high frequency power. Will be controlled. In addition, the control device 60 counts the number of times of applying the power of the high frequency power supply device 50, when a predetermined number of times the power is applied to display the notification that the observer to replace the reactor 30 and the high frequency power supply device (50) It will also play a role.

In this embodiment, in order to generate the inductively coupled plasma, a high frequency power supply 50 capable of applying a frequency of 13.56 MHz and 600 W to 1.5 KW power, which is widely used in a semiconductor manufacturing apparatus, was used. The inductively coupled plasma generated causes the perfluorinated compound in the reactor to react with the SiO ₂ component of the reactor to produce compounds such as CO, CO ₂ , SiF _4, and the like. The produced compound is discharged in the B direction through the second flange 20b, which is passed through a vacuum exhaust device, converted into a harmless gas through a wet or dry exhaust gas treatment device, and discharged into the atmosphere or adsorbed to a solid and disposed of.

As a result, using the device of the present invention, it is possible to change the perfluorinated compound into a compound which can be easily treated using a dry or wet device, thereby effectively treating it.

Since the inner container 32 of the reactor 30 is formed in a pleated form, the time for which the introduced perfluorinated compound stays in the reactor is delayed to sufficiently accomplish the ionization reaction, which in turn serves to improve the treatment efficiency of the gas. Done. In addition, the present inventors use a quartz tube as a reactor through a number of experiments, ions and radicals formed by the plasma decomposition reaction react with the SiO ₂ component of the quartz tube without the addition of a separate decomposition promoter, and the conventional wet type. And a dry treatable device to convert the treatable material.

In addition, while the high frequency power is applied, the cooling water flows along the cooling groove 25 of the flange 20b and the hollow portion 29a of the coil 29, so that each rubber ring 22a, 22b, 22c, 22d, 24a, 24b is applied. Deformation is prevented and the current flow on the coil is kept constant. This in turn serves to further improve the efficiency of the plant and extend its life.

Hereinafter, the results of treating CF ₄ and C ₄ F ₈ gas by using the apparatus according to an embodiment of the present invention will be described. 6A and 6B are mass spectrometric spectra for the CF ₄ gas before and after the plasma reaction 6a and 6b, and FIGS. 7A and 7B show the plasma before and after the reaction 7a and 7b for the C ₄ F ₈ gas. Mass spectrometry spectra).

The outer container used in the experiment was a quartz tube with an outer diameter of 100mm, an inner diameter of 92mm and a length of 300mm. The inner container was a quartz tube with 10 corrugations, 4mm thick and 350mm long. The rubber ring uses Viton o-ring (trade name, manufactured by __) that can withstand temperatures above about 200 ℃. The discharge coil uses hollow copper pipes with a pipe diameter of 9.5mm and gold-plated copper tubes. It was wound four times at an interval of 3 mm from the outside. Each gas was introduced at a flow rate of 40 cc / min and the pressure in the reactor was maintained at 500 mtorr. From the high frequency power supply, a frequency of 13.56 MHz and a power of 1250 W were applied. The treatment of these gases was measured using a quadrupole mass spectrometer.

Through the drawings it can be confirmed that the CF ₄ , C ₄ F ₈ gas is changed to a component such as SiF ₄ , CO in the apparatus of the present invention. The resulting SiF ₄ component is a material having high solubility in water, and thus can be easily processed. Through this treatment, a decomposition rate of about 93% or more was obtained for CF ₄ at a flow rate of 100 sccm or less, and about 96% or more for C ₄ F ₈ .

According to the apparatus of the present invention as described above, the plasma reaction can be sufficiently performed for a sufficient time by bending the inner container in which the plasma reaction is carried out, and the leakage of gas is prevented by sealing with a rubber ring between the reactor and the flange and the reactor The low pressure state inside can be easily maintained.

In describing the apparatus of the present invention as described above, in particular, the gas discharged from the process for manufacturing a semiconductor device is taken as an example, in which case the apparatus is particularly low-pressure between the semiconductor manufacturing apparatus and the vacuum exhaust apparatus or by the vacuum exhaust apparatus. It may be easily installed in a place where the state is maintained. In addition, the device of the present invention may be easily applied to devices for manufacturing LCDs as well as devices for manufacturing semiconductor devices.

In the apparatus of the present invention as described above, no decomposition accelerator is used for the ionization reaction of the perfluorinated compound gas. Therefore, the perfluorinated compound can be treated without any influence on the semiconductor manufacturing process. In addition, problems such as increased pipe and process pressure and shortened pump life caused by the use of the decomposition accelerator are improved, thereby stably treating the perfluorinated compound gas.

In addition, the high-frequency inductively coupled plasma perfluorinated compound treatment apparatus according to the present invention can be easily applied to various industrial facilities, and above all, the treatment of gas by improving the treatment rate by extending the residence time of the perfluorinated compound in the reactor. Increasing the efficiency to suppress its emissions to the air can prevent global warming and ozone layer destruction as much as possible. By the apparatus of the present invention, the perfluorinated compound gas is decomposed at least about 95%, and components such as SiF ₄ , CO, and CO ₂ may be 100% treated using a conventionally installed wet or dry apparatus without having a separate treatment apparatus. Can be.

In addition, the apparatus of the present invention is compact and easy to attach to the vacuum pipe, and the plasma is generated only when the perfluorinated compound gas is introduced, thereby reducing the cost of maintenance and repair of the apparatus.

Although the present invention has been described above according to an embodiment of the present invention, it will be apparent to those skilled in the art that various modifications may be made without departing from the spirit of the present invention.

Claims (15)

A reactor including an insulating inner container having a space in which a gas to be processed flows and having a bent at a predetermined interval, and a cylindrical outer container into which the inner container is inserted; A pair of flanges provided at the ends of the inner container and the outer container to fix them and seal the inside thereof; A coil wound at predetermined intervals along an outer wall of the outer container; A high frequency power supply device for applying high frequency power to the coil; And And a control device for controlling the application of high frequency power according to the inflow of the gas. The treatment apparatus for perfluorinated compound gas according to claim 1, wherein the inner container and the outer container are made of a quartz tube. The apparatus of claim 1, wherein a hollow part is formed in the coil so that cooling water flows therein. The apparatus of claim 1, wherein the coil is coated with gold. According to claim 1, The flange is formed with a first accommodating groove for accommodating the inner container and a second accommodating groove for accommodating the outer container, wherein the inner container is formed longer than the outer container, A processing device for a perfluorinated compound gas, characterized in that a rubber ring is inserted between the stored container and the flange and between the stored container and the flange. The apparatus of claim 5, wherein the rubber rings are provided in pairs, and metal rings are provided between the rubber rings to separate them. The treatment apparatus for perfluorinated compound gas according to claim 1, wherein an inside of the flange is provided with a separate cooling groove through which cooling water can flow. The apparatus of claim 7, wherein a cover is provided on an upper portion of the cooling groove, and rubber rings for preventing leakage of cooling water are provided on left and right sides of the cooling groove. The apparatus of claim 1, wherein the inner container is a corrugated quartz tube having a plurality of corrugations so as to delay the flow of gas. The treatment apparatus for perfluorinated compound gas according to claim 1, wherein the inner container is a helical quartz tube having a plurality of spiral grooves so as to delay the flow of gas. The overburden according to claim 1, wherein the inside of the reactor maintains a pressure of 0.001 to 1 torr, and the high frequency power supply device is a device capable of applying a frequency of 13.56 MHz and a power of 600 W to 1.5 KW. Apparatus for treatment of oxidized compound gas. The compound of claim 1, wherein the perfluorinated compound is selected from the group consisting of CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , C ₅ F ₈ , CHF ₃ and CH ₂ F ₂ . An apparatus for treating perfluorinated compound gas. The apparatus of claim 1, further comprising a matching network provided between the coil and the high frequency power supply device to match impedance therebetween. 10. The apparatus of claim 1, further comprising a wet device configured to dissolve the gas passing through the reactor in water or a dry device configured to adsorb the solid adsorbent. A method according to claim 1, which is used for the treatment of perfluorinated compound gas emitted in a CVD process and / or a plasma etching process for the manufacture of a semiconductor device or a liquid crystal display device (LCD).