KR19990005812A - Formation method of antireflection film - Google Patents
Formation method of antireflection film Download PDFInfo
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- KR19990005812A KR19990005812A KR1019970030030A KR19970030030A KR19990005812A KR 19990005812 A KR19990005812 A KR 19990005812A KR 1019970030030 A KR1019970030030 A KR 1019970030030A KR 19970030030 A KR19970030030 A KR 19970030030A KR 19990005812 A KR19990005812 A KR 19990005812A
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- antireflection film
- film
- forming
- antireflection
- reflection
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000015572 biosynthetic process Effects 0.000 title 1
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 9
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000000470 constituent Substances 0.000 claims description 3
- 230000010363 phase shift Effects 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 45
- 239000011247 coating layer Substances 0.000 abstract description 6
- 230000003287 optical effect Effects 0.000 abstract description 6
- 239000011368 organic material Substances 0.000 abstract description 5
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
플라즈마 향상 화학기상 증착장비에서 형성한 유전체 박막을 반사방지막으로 형성하는 방법에 대해 개시되어 있다. 본 발명의 반사방지막의 형성방법은, 포토레지스트막 하부의 반사방지막의 형성방법에 있어서, 상기 반사방지막을 PECVD 공정에 의한 유전체막으로 형성하는 것을 특징으로 한다. 본 발명에 의하면, 반사방지막을 유기물의 회전도포층에 비해 비교적 얇게 형성할 수 있으므로 CD 균일도를 향상시킬 수 있을 뿐 아니라 반사방지막의 광학적 성질을 용이하게 조절할 수 있으므로 반사방지막의 기능을 원활하게 수행하게 할 수 있다.Disclosed is a method for forming a dielectric thin film formed in a plasma enhanced chemical vapor deposition apparatus into an antireflection film. The antireflection film forming method of the present invention is a method of forming an antireflection film below a photoresist film, wherein the antireflection film is formed of a dielectric film by a PECVD process. According to the present invention, since the anti-reflection film can be formed relatively thinly compared to the rotating coating layer of the organic material, not only the CD uniformity can be improved but also the optical properties of the anti-reflection film can be easily adjusted to smoothly perform the function of the anti-reflection film. can do.
Description
본 발명은 반도체장치의 포토리소그래피 공정에서 사용되는 반사방지막의 형성방법에 관한 것으로서, 특히 플라즈마 향상 화학기상증착(Plasma Enhanced Chemical Vapor Deposit; 이하 PECVD라 한다)장비에서 형성한 유전체 박막을 반사방지막으로 형성하는 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming an antireflection film used in a photolithography process of a semiconductor device. In particular, a dielectric thin film formed from a plasma enhanced chemical vapor deposition (PECVD) device is formed as an antireflection film. It is about how to.
반도체장치의 포토리소그래피 공정은 스테퍼(stepper)라는 노광장치에서 발생한 광을 마스크를 통과시킴으로써 감광막(photoresist)을 원하는 패턴으로 형성하는 공정을 말한다. 이러한 포토리소그래피 공정에 있어서 감광막에서 난반사되는 광은 형성될 감광막 패턴에 있어서 불량을 야기하게 된다. 특히, 감광막 하부의 표면형상(topology)에 있어서 기복이 심한 경우에는 경사면에서 반사된 광이 감광막 패턴의 불량을 야기하는 노치(notch)현상까지 일어나게 된다.The photolithography process of a semiconductor device refers to a process of forming a photoresist in a desired pattern by passing light generated in an exposure apparatus called a stepper through a mask. In such a photolithography process, light that is diffusely reflected from the photoresist film causes a defect in the photoresist pattern to be formed. In particular, when the ups and downs of the topology of the bottom of the photoresist film are severe, the light reflected from the inclined surface may occur up to a notch phenomenon causing the photoresist pattern to be defective.
통상적으로, 이러한 문제점을 해결하기 위해서 감광막의 하부에 반사방지막(AntiReflective Coating; ARC로 약칭하기도 한다)을 형성하는 방법이 채택되어 있다. 도1에 의해 이 메커니즘을 설명하면, 노광장치의 광원에서 나온 광(a)이 반사방지막(10)을 투과했다가 다시 반사할 경우의 광(b)과 감광막(20)을 투과했다가 반사하는 광(c)이 상기 노광장치에서 나온 광의 파장의 1/2의 위상차를 가지도록 반사방지막의 두께 및 굴절률을 조절하면 이들이 서로 상쇄간섭(destructive interference)을 일으켜서 반사가 방지된다는 것이 요점이다. 설명되지 않은 도면번호 5는 반도체기판 상에 형성된 하부구조물이다.In general, in order to solve such a problem, a method of forming an anti-reflective coating (hereinafter referred to as ARC) under the photosensitive film is adopted. Referring to FIG. 1, the mechanism of light a from the light source of the exposure apparatus passes through the anti-reflection film 10 and then reflects the light b and the photosensitive film 20 when reflecting again. The point is that if the light c adjusts the thickness and refractive index of the antireflection film so as to have a phase difference of 1/2 of the wavelength of the light emitted from the exposure apparatus, they cause destructive interference with each other to prevent reflection. Reference numeral 5, which is not described, is a substructure formed on the semiconductor substrate.
종래 기술에서는 이 반사방지막에 SOG(Spin On Glass)와 같은 유기물의 도포층이 주로 사용된다. 이러한 유기물의 도포층은 회전도포의 방식으로 형성되기 때문에 도포층의 두께가 비교적 두껍고(1000∼2000Å), 물질의 조성변화에 의해 광학적인 성질을 쉽게 조절하기 어렵다는 특징을 가진다.In the prior art, a coating layer of an organic material such as spin on glass (SOG) is mainly used for this antireflection film. Since the coating layer of the organic material is formed by the method of rotating coating, the thickness of the coating layer is relatively thick (1000-2000 kPa), and it is difficult to easily adjust the optical properties by the change of the composition of the material.
이와 같이, 유기물의 도포층을 사용하면 반사방지막의 두께가 두껍기 때문에 CD 균일도(Critical Dimension Uniformity)가 나빠지며, 광학적 성질을 조절하기 어렵기 때문에 반사방지막의 역할을 수행하기도 어렵다.As such, when the coating layer of the organic material is used, CD uniformity is deteriorated because the thickness of the antireflection film is thick, and it is difficult to perform the role of the antireflection film because it is difficult to control optical properties.
상기한 문제점을 해결하기 위한 본 발명의 목적은 반사방지막을 비교적 얇게 형성하는 방법을 제공하는 데 있다.An object of the present invention for solving the above problems is to provide a method of forming a relatively thin antireflection film.
본 발명의 다른 목적은 형성되는 반사방지막의 광학적 성질을 용이하게 조절할 수 있는 재질로 반사방지막을 형성하는 방법을 제공하는 데 있다.Another object of the present invention is to provide a method of forming an antireflection film made of a material that can easily adjust the optical properties of the antireflection film to be formed.
도1은 종래 기술에 의한 반사방지막의 용도를 설명하기 위한 단면도,1 is a cross-sectional view for explaining the use of the anti-reflection film according to the prior art,
도2는 본 발명의 실시예에 따른 반사방지막의 단면도이다.2 is a cross-sectional view of the anti-reflection film according to the embodiment of the present invention.
도면의 주요부분에 대한 부호설명Explanation of Signs of Major Parts of Drawings
5 … 반도체기판 상의 하부구조물5... Substructure on Semiconductor Substrate
10 … 반사방지막10... Antireflection film
20 … 감광막20... Photoresist
상기한 목적들을 달성하기 위한 본 발명의 반사방지막의 형성방법은, 포토레지스트막 하부의 반사방지막의 형성방법에 있어서, 상기 반사방지막을 PECVD 공정에 의한 유전체막으로 형성하는 것을 특징으로 한다. 이 때, 반사방지막의 재질은 SiON 또는 SiC로 선택하는 것이 바람직하며, 상기 반사방지막의 통과광은 상기 반사방지막 재질의 구성성분원자의 화학양론적 조절을 통하여 위상이동을 실현할 수 있다.The method of forming an antireflection film of the present invention for achieving the above objects is characterized in that the antireflection film is formed of a dielectric film by a PECVD process in the method of forming an antireflection film under the photoresist film. In this case, the material of the anti-reflection film is preferably selected from SiON or SiC, and the light passing through the anti-reflection film can realize phase shift through stoichiometric adjustment of the constituent atoms of the anti-reflection film material.
또한, 상기 형성방법의 각각에 있어서 반사방지막은 CD 균일도를 향상시킬 수 있도록 200∼300Å의 두께로 형성하는 것이 바람직하다.In each of the above forming methods, the antireflection film is preferably formed to a thickness of 200 to 300 mW so as to improve the CD uniformity.
이하, 본 발명의 실시예에 대해 설명한다.EMBODIMENT OF THE INVENTION Hereinafter, the Example of this invention is described.
본 실시예에서는 반사방지막의 재질로 SiON을 선택하였으며, PECVD 공정에서 사용되는 반응가스량을 조절하여 SiOxNy의 비정질 구조를 250Å 두께로 얻었다. 이 때, 반사방지막 재질의 구성성분원자의 화학양론적 조절(x와 y의 비율)을 하면, 반사율 및 소멸상수 등의 광학적 성질의 조절이 가능하다. 이와 더불어 반사방지막의 두께조절도 가능하므로 광의 위상이동(phase shift) 역시 용이하게 조절될 수 있어서 반사방지막의 기능을 원활하게 수행할 수 있다.In this embodiment, SiON was selected as the material of the anti-reflection film, and the amount of reaction gas used in the PECVD process was adjusted to obtain an amorphous structure of SiO x N y having a thickness of 250 kV. In this case, if the stoichiometric adjustment of the constituent atoms of the antireflection film material (ratio of x and y), optical properties such as reflectance and extinction constant can be controlled. In addition, since the thickness of the anti-reflection film can be adjusted, the phase shift of light can also be easily adjusted to smoothly perform the function of the anti-reflection film.
도2는 본 발명의 실시예에 따른 반사방지막의 단면도로서, 구조는 종래 기술의 것과 동일하지만, 반사방지막(10')은 PECVD 공정에 의해 증착된 SiOxNy막이다.Fig. 2 is a cross sectional view of an antireflection film according to an embodiment of the present invention. The structure is the same as that of the prior art, but the antireflection film 10 'is a SiO x N y film deposited by a PECVD process.
본 발명에 의하면, 반사방지막을 유기물의 회전도포층에 비해 비교적 얇게 형성할 수 있으므로 CD 균일도를 향상시킬 수 있다.According to the present invention, since the antireflection film can be formed relatively thinly compared to the rotating coating layer of the organic material, the CD uniformity can be improved.
또한, 반사방지막의 광학적 성질을 용이하게 조절할 수 있으므로 반사방지막의 기능을 원활하게 수행할 수 있다.In addition, since the optical properties of the antireflection film can be easily adjusted, the function of the antireflection film can be smoothly performed.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970030030A KR19990005812A (en) | 1997-06-30 | 1997-06-30 | Formation method of antireflection film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019970030030A KR19990005812A (en) | 1997-06-30 | 1997-06-30 | Formation method of antireflection film |
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| Publication Number | Publication Date |
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| KR19990005812A true KR19990005812A (en) | 1999-01-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019970030030A Withdrawn KR19990005812A (en) | 1997-06-30 | 1997-06-30 | Formation method of antireflection film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100696034B1 (en) * | 1998-10-01 | 2007-03-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Silicon Carbide Used as Anti-reflective Film with Low Dielectric Constant and Its Deposition Method |
-
1997
- 1997-06-30 KR KR1019970030030A patent/KR19990005812A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100696034B1 (en) * | 1998-10-01 | 2007-03-16 | 어플라이드 머티어리얼스, 인코포레이티드 | Silicon Carbide Used as Anti-reflective Film with Low Dielectric Constant and Its Deposition Method |
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Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19970630 |
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