KR19980068395U - Chemical Vapor Deposition Equipment - Google Patents
Chemical Vapor Deposition Equipment Download PDFInfo
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- KR19980068395U KR19980068395U KR2019970013028U KR19970013028U KR19980068395U KR 19980068395 U KR19980068395 U KR 19980068395U KR 2019970013028 U KR2019970013028 U KR 2019970013028U KR 19970013028 U KR19970013028 U KR 19970013028U KR 19980068395 U KR19980068395 U KR 19980068395U
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- South Korea
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- vapor deposition
- chemical vapor
- gas
- tube body
- cleaning
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 35
- 238000004140 cleaning Methods 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 239000006227 byproduct Substances 0.000 claims abstract description 14
- 239000007921 spray Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 description 32
- 235000012431 wafers Nutrition 0.000 description 21
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Chemical Vapour Deposition (AREA)
Abstract
본 고안은 일측에는 공정가스가 주입되는 공급부가 있고, 타측에는 공정부산물이 배기되는 배기부의 설치된 튜브몸체가 구비된 화학기상증착장치에 관한 것으로, 공급부에는 공정가스가 주입되는 제1분사노즐 및 세정가스가 주입되는 제2노즐가연결설치된 분사노즐이 튜브몸체 내로 삽입된 것을 특징으로 한다.The present invention relates to a chemical vapor deposition apparatus having a tube body in which a process gas is injected at one side, and a tube body installed at an exhaust part at which the process by-product is exhausted. It is characterized in that the injection nozzle is connected to the second nozzle which is injected with gas is inserted into the tube body.
따라서 본 고안은 각각의 분사노즐을 이용하여 장치 내의 세정이 용이한 잇점이 있다.Therefore, the present invention has the advantage of easy cleaning in the apparatus by using each injection nozzle.
Description
본 고안은 웨이퍼에 증착막을 형성시키기 위한 화학기상증착장치에 관한 것으로서, 특히 세정에 용이하도록 한 화학기상증착장치에 관한 것이다.The present invention relates to a chemical vapor deposition apparatus for forming a deposited film on a wafer, and more particularly to a chemical vapor deposition apparatus to facilitate the cleaning.
반도체 디바이스 제조공정에 있어서, 기체상의 화합물을 분해한 후, 화학적 반응에 의해 웨이퍼에 박막이나 에피층을 형성하는 일반적인 화학기상증착장치는 공정 완료 후, 미반응가스 및 공정부산물이 각 부위에 증착된다.In the semiconductor device manufacturing process, a general chemical vapor deposition apparatus which decomposes a gaseous compound and then forms a thin film or epitaxial layer on a wafer by a chemical reaction, after completion of the process, unreacted gas and process by-products are deposited on each site. .
따라서, 각 부위에 증착된 미반응가스 및 공정부산물을 제거하기 위한 별도의 세정공정이 요구된다.Therefore, a separate cleaning process is required to remove unreacted gas and process by-products deposited on each site.
이와같이 세정으로는 습식세정과 건식세정으로 크게 두가지로 나뉘며, 습식세정은 장치로부터 세정하고자 하는 부분 즉, 외부튜브 및 내부튜브 및 웨이퍼보오트를 분해시킨 후, 처리액이 담긴 처리조 내로 각각의 외부튜브 및 내부튜브 및 웨이퍼보오트를 일정시간 동안 디핑하여 표면과의 화학반응을 통해 이물질을 제거하는 것이며, 건식세정은 식각가스를 장치 내부로 공급시키어 각 부위를 세정하는 것이다.Thus, there are two main types of cleaning, wet and dry cleaning. Wet cleaning decomposes the parts to be cleaned from the device, that is, the outer tube, the inner tube and the wafer boat, and then into each treatment tank containing the treatment liquid. Tubes, inner tubes, and wafer boats are dipped for a certain time to remove foreign substances through chemical reactions with the surface. Dry cleaning is to clean each part by supplying etching gas into the apparatus.
도 1은 종래기술에 따른 화학기상증착장치의 단면도이다.1 is a cross-sectional view of a chemical vapor deposition apparatus according to the prior art.
종래의 일반적인 화학기상증착장치는, 도 1과 같이, 일측에는 공정가스가 주입되는 공급부(106)가 있고, 타측에는 공정부산물이 배기되는 배기부(108)가 설치된 외부튜브몸체(100)와, 외부튜브 몸체(100) 내에 삽입되는 내부튜브(102)와, 외부튜브 몸체(100) 하단을 개폐시키는 덮개(110)와, 덮개(110)에 설치되어 삽탈 가능한 세정가스라인(112)과, 내부튜브(102) 내에 삽입되는 웨이퍼보오트(104)로 구성되며, 외부튜브몸체(100) 및 내부튜브(102) 및 웨이퍼보오트(104)는 석영재질로 형성된다.Conventional chemical vapor deposition apparatus, as shown in Figure 1, on one side there is a supply unit 106 is injected with the process gas, the other side is the outer tube body 100 is provided with an exhaust unit 108 for exhausting the process by-products, An inner tube 102 inserted into the outer tube body 100, a cover 110 for opening and closing the lower end of the outer tube body 100, a cleaning gas line 112 installed in the cover 110 and removable, and an inner portion thereof. It consists of a wafer boat 104 inserted into the tube 102, the outer tube body 100 and the inner tube 102 and the wafer boat 104 is formed of a quartz material.
이와같은 구성을 갖는 종래의 화학기상증착장치에서 증착 및 세정공정을 알아보면 다음과 같다.Looking at the deposition and cleaning process in the conventional chemical vapor deposition apparatus having such a configuration as follows.
먼저, 증착공정이 진행될 웨이퍼를 웨이퍼보오트(104)에 각각 적재시킨 후, 덮개(110)를 오픈시키어 내부튜브(102)내로 이송시킨 후, 덮개(110)를 닫는다.First, the wafer to be deposited is loaded on the wafer boat 104, and then the lid 110 is opened and transferred into the inner tube 102, and then the lid 110 is closed.
이어서 공급부(106)를 통해 내부로 공정가스를 공급시키며, 공급된 공정가스는 웨이퍼 사이사이로 흘러 웨이퍼 표면과 화학반응을 하면서 증착된다.Subsequently, a process gas is supplied through the supply unit 106, and the supplied process gas flows between the wafers and is deposited while chemically reacting with the wafer surface.
그리고 공정진행 중 미반응가스나 공정부산물은 배기부(108)를 통해 외부로 배기되는 데, 이러한 미반응가스나 공정부산물은 석영재질인 외부튜브 몸체(100) 및 내부튜브(102), 그리고 웨이퍼보오트(104) 등의 장치 각 부위에 쉽게 증착된다.In addition, the unreacted gas or process by-products are exhausted to the outside through the exhaust unit 108 during the process, and the unreacted gas or process by-products are made of quartz, and the outer tube body 100 and the inner tube 102 and wafers. It is easily deposited on each part of the device such as the boat 104.
따라서, 이와같은 증착공정 완료 시, 덮개(110)에 세정가스라인(112)을 별도로 설치한 후, CH3F 등의 세정가스를 내부로 흘러보내어 준다.Therefore, when the deposition process is completed, the cleaning gas line 112 is separately installed on the cover 110, and the cleaning gas such as CH 3 F is flowed into the inside.
그리고 외부튜브 몸체(100) 내로 공급된 세정가스는 상방향으로 흐르면서 내부튜브(102)로 흘러들어가서 웨이퍼보오트(104) 사이사이로 흐르면서 세정된다.In addition, the cleaning gas supplied into the outer tube body 100 flows upward and flows into the inner tube 102 to be cleaned while flowing between the wafer boats 104.
세정 중에 미반응된 세정가스 및 부산물은 배기부(108)를 통해 외부로 배기된다.Unreacted cleaning gas and by-products during the cleaning are exhausted to the outside through the exhaust unit 108.
그러나, 종래의 일반적인 화학기상증착장치에서는 세정 시, 공정가스가 공급되는 공급부와 세정가스라인이 각각 설치된 문제점이 있다.However, in the conventional chemical vapor deposition apparatus of the prior art, there is a problem that the supply unit and the cleaning gas line is supplied to each of the process gas is provided at the time of cleaning.
따라서, 본 고안은 이러한 문제점을 해결하고자 안출된 것으로, 세정공정을 진행시키기에 용이한 화학기상증착장치를 제공함을 목적으로 한다.Accordingly, the present invention has been made to solve this problem, and an object of the present invention is to provide a chemical vapor deposition apparatus that is easy to advance the cleaning process.
본 고안의 화학기상증착장치는 일측에는 공정가스가 주입된은 공급부가 있고, 타측에는 공정부산물이 배기되는 배기부가 설치된 튜브몸체와, 공급부를 통하여 튜브몸체 내로 삽입되어 공정가스 및 세정가스가 주입되는 분사노즐이 구비된 것이 특징이다.The chemical vapor deposition apparatus of the present invention has a supply body in which a process gas is injected at one side, a tube body provided with an exhaust part through which a process by-product is exhausted, and a process gas and a cleaning gas are injected into the tube body through a supply unit. It is characterized by the injection nozzle.
이하, 첨부된 도면을 참조하여 본 고안을 설명하겠다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
도 1은 종래기술에 따른 화학기상증착장치의 단면도.1 is a cross-sectional view of a chemical vapor deposition apparatus according to the prior art.
도 2는 본 고안의 화학기상증착장치의 단면도.Figure 2 is a cross-sectional view of the chemical vapor deposition apparatus of the present invention.
*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *
100,200. 외부튜브몸체102,202. 내부튜브100,200. Outer tube body 102,202. Inner tube
104,204. 웨이퍼보오트106,206. 공급부104,204. Wafer Boats 106,206. Supply department
108.208. 배기부110,210. 덮개108.208. Exhaust 110,210. cover
220. 제1분사노즐221,226. 개폐밸브220. First spray nozzles 221,226. Valve
224. 제2분사노즐112. 세정가스라인224. Second injection nozzle 112. Cleaning Gas Line
도 2는 본 고안의 화학기상증착장치의 단면도이다.2 is a cross-sectional view of the chemical vapor deposition apparatus of the present invention.
본 고안의 화학기상증착장치는 도 2와 같이, 일측에는 공정가스가 주입되는 제1분사노즐(220) 및 세정가스가 주입되는 제2분사노즐(224)이 각각 연설설치된 분사노즐이 삽입된 공급부(206)가 있고, 타측에는 공정부산물이 배기되는 배기부(208)가 설치된 외부튜브 몸체(200)와, 외부튜브 몸체(200) 내에 삽입되는 내부튜브(202)와, 외부튜브 몸체(220) 하단을 개폐시키는 덮개(210)와, 내부튜브(202) 내에 삽입되는 웨이퍼보오트(204)로 구성된다.In the chemical vapor deposition apparatus of the present invention, as shown in FIG. 2, one side of the first injection nozzle 220 into which the process gas is injected and the second injection nozzle 224 into which the cleaning gas is injected are respectively supplied with a spray nozzle into which the nozzle is installed. 206, the outer tube body 200 having an exhaust unit 208 through which the process by-product is exhausted, the inner tube 202 inserted into the outer tube body 200, and the outer tube body 220. The cover 210 opens and closes a lower end, and a wafer boat 204 inserted into the inner tube 202.
그리고 제1분사노즐(220) 및 제2분사노즐(224) 입구에는 각각 제1개폐밸브(221) 및 제2개폐밸브(226)가 설치된다.In addition, a first opening / closing valve 221 and a second opening / closing valve 226 are installed at the inlet of the first injection nozzle 220 and the second injection nozzle 224, respectively.
그리고 외부튜브 몸체(200) 및 내부튜브(202), 그리고 웨이퍼보오트(204)는 석영재질로 형성된다.The outer tube body 200, the inner tube 202, and the wafer boat 204 are formed of quartz material.
이와같은 구성을 갖는 본 고안의 화학기상증착장치에서 증착 및 세정공정을 알아보면 다음과 같다.Looking at the deposition and cleaning process in the chemical vapor deposition apparatus of the present invention having such a configuration as follows.
먼저, 증착공정이 진행될 웨이퍼를 웨이퍼보오트(204)에 적재시킨 후, 내부튜브(202)로 이송시키고, 제1분사노즐(220)을 통해 내부로 공급된 공정가스는 웨이퍼 사이사이로 흘러 웨이퍼 표면과 화학반응을 하면서 증착된다.First, the wafer to be deposited is loaded on the wafer boat 204, then transferred to the inner tube 202, and the process gas supplied therein through the first spray nozzle 220 flows between the wafers to form a wafer surface. It is deposited by chemical reaction with.
이 때, 제1분사노즐(220)과 제2분사노즐(224)을 갖는 분사노즐을 공급부(206)를 통해 외부튜브 몸체(200) 내로 깊숙히 삽입시키어, 증착공정 및 차후에 실시될 세정공정 시 확산 및 세정속도가 빠르게 한다.At this time, the injection nozzle having the first spray nozzle 220 and the second spray nozzle 224 is deeply inserted into the outer tube body 200 through the supply unit 206, and diffused during the deposition process and the cleaning process to be performed later And speed of cleaning.
그리고 공정진행 중 미반응가스나 공정부산물은 배기부(208)를 통해 외부로 배기되는 데, 이러한 미반응가스나 공정부산물은 석영재질인 석영재질인 외부튜브 몸체(200) 및 내부튜브(202), 그리고 웨이퍼보오트(204)의 각 부위에 쉽게 증착된다.In addition, the unreacted gas or the process by-products are exhausted to the outside through the exhaust unit 208 during the process, and the unreacted gas or the process by-products are the quartz tube material of the outer tube body 200 and the inner tube 202. And are easily deposited on each portion of the wafer boat 204.
따라서, 이와 같은 증착공정 완료 시, 제1분사노즐(220)에 형성된 제1개폐밸브(221)를 오프시킨 후, 제2개폐밸브(226)를 오픈시키어 제2분사노즐(224)로부터 세정가스를 내부로 공급시킨다.Therefore, when the deposition process is completed, the first opening / closing valve 221 formed in the first spray nozzle 220 is turned off, and then the second opening / closing valve 226 is opened to clean the gas from the second spray nozzle 224. To the inside.
그리고 외부튜브 몸체(200) 내로 공급된 세정가스는 상방향으로 흐르면서 내부튜브(202)로 흘러들어가서 웨이퍼보오트(204) 사이사이로 흐르면서 세정된다.The cleaning gas supplied into the outer tube body 200 flows upward and flows into the inner tube 202 to be washed between the wafer boats 204.
세정 중에 미반응가스 및 부산물은 배기부(208)를 통해 외부로 배기된다.Unreacted gases and by-products are exhausted to the outside through the exhaust portion 208 during the cleaning.
상술한 바와 같이, 공급부 내에 공정가스 및 세정가스가 분사되는 분사노즐이 설치된 본 고안의 화학기상증착장치에서는 고압으로 세정가스를 분사시킴으로써 세정가스 및 공정가스의 확산속도가 빨라진다.As described above, in the chemical vapor deposition apparatus of the present invention provided with an injection nozzle in which the process gas and the cleaning gas are injected into the supply unit, the diffusion rate of the cleaning gas and the process gas is increased by injecting the cleaning gas at a high pressure.
따라서, 확산속도가 빨라짐에 따라, 미반응가스 및 공정부산물이 증착된 부위를 빠른 시간 내에 세정이 가능한 잇점이 있다.Therefore, as the diffusion rate is increased, the area in which unreacted gas and process by-products are deposited can be quickly cleaned.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970013028U KR19980068395U (en) | 1997-05-31 | 1997-05-31 | Chemical Vapor Deposition Equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970013028U KR19980068395U (en) | 1997-05-31 | 1997-05-31 | Chemical Vapor Deposition Equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR19980068395U true KR19980068395U (en) | 1998-12-05 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970013028U Ceased KR19980068395U (en) | 1997-05-31 | 1997-05-31 | Chemical Vapor Deposition Equipment |
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| Country | Link |
|---|---|
| KR (1) | KR19980068395U (en) |
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1997
- 1997-05-31 KR KR2019970013028U patent/KR19980068395U/en not_active Ceased
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