KR19980015329A - Barrier metal layer formation method - Google Patents
Barrier metal layer formation method Download PDFInfo
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- KR19980015329A KR19980015329A KR1019960034614A KR19960034614A KR19980015329A KR 19980015329 A KR19980015329 A KR 19980015329A KR 1019960034614 A KR1019960034614 A KR 1019960034614A KR 19960034614 A KR19960034614 A KR 19960034614A KR 19980015329 A KR19980015329 A KR 19980015329A
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- titanium
- metal layer
- argon gas
- barrier metal
- forming
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000004888 barrier function Effects 0.000 title claims abstract description 23
- 230000015572 biosynthetic process Effects 0.000 title 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000010936 titanium Substances 0.000 claims abstract description 40
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 34
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000007789 gas Substances 0.000 claims abstract description 26
- 229910052786 argon Inorganic materials 0.000 claims abstract description 25
- 238000000151 deposition Methods 0.000 claims abstract description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 6
- 238000002347 injection Methods 0.000 claims abstract 2
- 239000007924 injection Substances 0.000 claims abstract 2
- 230000008021 deposition Effects 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 4
- 238000011109 contamination Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 238000005137 deposition process Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
본 발명은 장벽금속층 형성방법에 관한 것으로, 웨이퍼를 노출시키는 금속배선용 콘택홀을 형성하고, 금속배선으로 사용하는 알루미늄합금과의 접합파괴를 방지하기 위하여 상기 콘택홀을 포함한 전체 표면상부에 장벽금속층을 형성하는 방법에 있어서, 상기 웨이퍼 상부에 제1티타늄막을 소정두께 형성하되, 티타늄을 타겟으로 하고 아르곤가스 분위기를 갖는 반응챔버에서 형성하고, 상기 반응챔버에 질소가스를 첨가 주입하여 상기 웨이퍼 상부에 티타늄질화막을 소정두께 증착한 다음, 상기 질소가스의 주입을 방지하며 상기 아르곤가스 분위기로 상기 티타늄질화막 상부에 제2티타늄막을 증착하는 공정으로 Ti/TiN/Ti 적층구조로 형성된 장벽금속층을 형성하되, 하나의 증착챔버에서 형성하여 Ti 번인 공정을 스스로 해결하고 공정시간 및 공정단가를 절감하며, 오염에 의한 파티클을 감소시켜 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 기술이다.The present invention relates to a method for forming a barrier metal layer, which comprises forming a contact hole for a metal wiring to expose a wafer and forming a barrier metal layer on the entire surface including the contact hole to prevent breakage of the contact hole with an aluminum alloy used as a metal line The method comprising the steps of: forming a first titanium film on the wafer at a predetermined thickness, forming a reaction chamber having titanium as a target and having an argon gas atmosphere, adding nitrogen gas to the reaction chamber, Forming a barrier metal layer formed of a Ti / TiN / Ti laminated structure by depositing a nitride film to a predetermined thickness and then preventing the injection of the nitrogen gas and depositing a second titanium film on the titanium nitride film in the argon gas atmosphere, And the Ti burn-in process is solved on its own, and the process time and process step Saving, and to reduce the particle contamination is by improving the characteristics and reliability of the semiconductor device and technique that enables high integration of the semiconductor device thereof.
Description
제1A도 내지 제1C도는 본 발명의 실시예에 따른 장벽금속층 형성방법을 도시한 단면도.1A to 1C are cross-sectional views illustrating a method of forming a barrier metal layer according to an embodiment of the present invention.
*도면의 주요부분에 대한 부호의 설명*Description of the Related Art [0002]
11:웨이퍼13:티타늄 타겟11: Wafer 13: Titanium target
15:제1티타늄막17:아르곤가스15: first titanium film 17: argon gas
19:질소가스21:제1티타늄질화막19: Nitrogen gas 21: First titanium nitride film
23:제2티타늄질화막25:제2티타늄막23: second titanium nitride film 25: second titanium film
본 발명은 장벽금속층 형성방법에 관한 것으로, 특히 하나의 챔버(chamber)에서 식각장벽층을 형성하여 이동 공정으로 유발되는 파티클 오염 및 기계적인 결함을 감소시키고 생산성을 향상시킬 수 있는 기술에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a barrier metal layer forming method, and more particularly, to a technique capable of reducing particle contamination and mechanical defects caused by a transfer process by forming an etch barrier layer in one chamber, and improving productivity.
일반적으로, 소자간이나 소자와 외부회로 사이를 전기적으로 접속시키기 위한 반도체소자의 배선은, 배선을 위한 소정의 콘택홀 및 비아홀을 배선재료로 매립하여 배선층을 형성하고 후속공정을 거쳐 이루어지며, 낮은 저항을 필요로 하는 곳에는 금속배선을 사용한다.In general, a wiring of a semiconductor element for electrically connecting between elements or between an element and an external circuit is formed by filling a predetermined contact hole and a via hole with a wiring material to form a wiring layer and performing a subsequent process, Metal wiring is used where resistance is required.
상기 금속배선은 알루미늄(Al)에 소량의 실리콘이나 구리가 포함되거나 실리콘과 구리가 모두 포함되어 비저항이 낮으면서 가공성이 우수한 알루미늄합금을 배선재료로 하여 물리기상증착(Physical Vapor Deposition, 이하에서 PVD라 함) 방법의 스퍼터링으로 상기의 콘택홀 및 비아홀을 매립하는 방법으로 형성한다.The metal interconnection may be formed by physical vapor deposition (hereinafter referred to as " PVD ") using an aluminum alloy containing a small amount of silicon or copper or silicon and copper, And then filling the contact holes and the via holes by sputtering.
그러나, 반도체기판의 실리콘과 상기 알루미늄합금의 알루미늄이 상호 확산하여 접합이 파괴되는 접합파괴(junction spiking) 현상이 발생한다.However, a junction spiking phenomenon occurs in which silicon of the semiconductor substrate and aluminum of the aluminum alloy are mutually diffused to break the junction.
그리하여, 상기 접합파괴 현상을 극복하기 위하여, 상기 반도체기판과 알루미늄합금 사이에 장벽금속층을 형성하여 이를 방지하였다.Thus, a barrier metal layer is formed between the semiconductor substrate and the aluminum alloy to prevent the junction breakdown phenomenon.
종래기술에 따른 장벽금속층 형성방법은 다음과 같다.A method of forming a barrier metal layer according to the prior art is as follows.
먼저, 공지의 기술로 웨이퍼 상부에 금속배선 콘택마스크를 이용한 식각공정으로 상기 웨이퍼를 노출시키는 콘택홀을 형성한다.First, a contact hole for exposing the wafer is formed by an etching process using a metal wiring contact mask on the wafer with a known technique.
그리고, 상기 웨이퍼에 티타늄 증착챔버에서 티타늄막을 증착하고, 상기 웨이퍼를 티타늄질화막 증착챔버로 이동하여 티타늄질화막을 증착한다.Then, a titanium film is deposited on the wafer in a titanium deposition chamber, and the wafer is transferred to a titanium nitride film deposition chamber to deposit a titanium nitride film.
여기서, 상기 티타늄 증착챔버는 티타늄 금속을 타겟(target)으로 하여 아르곤가스로 상기 웨이퍼에 증착할 수 있도록 형성한다.Here, the titanium deposition chamber is formed so as to be deposited on the wafer with argon gas using a titanium metal as a target.
그리고, 상기 티타늄질화막 증착챔버는 티타늄 금속을 타겟으로 하여 아르곤가스와 질소가스 분위기로 상기 웨이퍼에 증착할 수 있도록 형성한다.The titanium nitride film deposition chamber is formed so as to be deposited on the wafer in an atmosphere of argon gas and nitrogen gas using a titanium metal as a target.
이때, 상기 티타늄질화막 증착챔버는 상기 웨이퍼에 티타늄질화막 증착공정후 상기 증착챔버 내부의 보호막과 웨이퍼 고정대 그리고 상기 타겟인 티타늄 금속 표면에 형성된 티타늄질화막이 파티클 소오스(particle source)로 작용한다.At this time, after the titanium nitride film deposition process is performed on the wafer, the protective film and the wafer holding table inside the deposition chamber and the titanium nitride film formed on the target titanium metal surface act as a particle source.
이로인하여, 상기 증착챔버에서의 티타늄질화막 증착공전 전에, 질소가스를 주입하지 않는 상태에서 아르곤 가스만을 주입하여 티타늄 번인(Ti burn in) 상태로 만들어 주어야 하는 번거로움이 있으며, 또한 상기 파티클이 완전히 제거되지 않아 소자의 특성 및 신뢰성을 저하시키고 그에 따른 반도체소자의 고집적화를 어렵게 하는 문제점이 있다.Therefore, it is troublesome to inject only argon gas into the titanium burn-in state before injecting the nitrogen gas before the vapor deposition of the titanium nitride film in the deposition chamber, There is a problem that the characteristics and reliability of the device are deteriorated and the integration of the semiconductor device becomes difficult.
따라서, 본 발명은 상기한 문제점을 해결하기 위하여, 하나의 증착 챔버에서 티타늄막과 티타늄질화막으로 형성된 장벽금속층을 형성하되, 파티클의 유발을 최소화시켜 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 장벽금속층 형성방법을 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a barrier metal layer formed of a titanium film and a titanium nitride film in one deposition chamber, minimizing the generation of particles and improving the characteristics and reliability of the semiconductor device, And a method of forming a barrier metal layer which enables high integration of the barrier metal layer.
이상의 목적을 달성하기 위해 본 발명에 따른 장벽금속층 형성방법의 특징은, 웨이퍼를 노출시키는 금속배선용 콘택홀을 형성하고, 금속배선으로 사용하는 알루미늄합금과의 접합파괴를 방지하기 위하여 상기 콘택홀을 포함한 전체표면상부에 장벽금속층을 형성하는 방법에 있어서, 상기 웨이퍼 상부에 제1티타늄막을 소정두께 형성하되, 티타늄을 타겟으로 하고 아르곤가스 분위기를 갖는 반응챔버에서 형성하는 공정과, 상기 반응챔버에 질소가스를 첨가 주입하여 상기 웨이퍼 상부에 티타늄질화막을 소정두께 증착하는 공정과, 상기 질소가스의 주입을 방지하며 상기 아르곤가스 분위기로 상기 티타늄질화막 상부에 제2티타늄막을 증착하는 공정을 포함하는 것이다.In order to accomplish the above object, a method of forming a barrier metal layer according to the present invention is characterized in that a contact hole for a metal wiring for exposing a wafer is formed, and in order to prevent breakage of a junction with an aluminum alloy used as a metal wiring, A method for forming a barrier metal layer on an entire surface of a wafer, comprising the steps of: forming a first titanium film on the wafer at a predetermined thickness, in a reaction chamber having titanium as a target and having an argon gas atmosphere; And depositing a titanium nitride film on the wafer at a predetermined thickness; and depositing a second titanium film on the titanium nitride film in the argon gas atmosphere to prevent the nitrogen gas from being injected into the titanium nitride film.
이하, 첨부된 도면을 참고로 하여 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
제1A도 내지 제1C도는 본 발명의 실시예에 따른 장벽금속층 형성방법을 도시한 단면도이다.1A to 1C are cross-sectional views illustrating a method of forming a barrier metal layer according to an embodiment of the present invention.
먼저, 웨이퍼(11)를 티타늄 타겟(13)이 형성된 증착챔버(도시안됨)의 웨이퍼 고정대(도시안됨)에 고정하고, 아르곤가스(17) 분위기에서 증착공정을 실시하여 상기 웨이퍼(11) 상부에 제1티타늄막(15)을 200~350Å 정도의 두께로 형성한다.First, the wafer 11 is fixed to a wafer fixing table (not shown) of a deposition chamber (not shown) where a titanium target 13 is formed, and a deposition process is performed in an argon gas (17) The first titanium film 15 is formed to a thickness of about 200 to 350 Å.
이때, 상기 제1티타늄막(15) 증착공정은 PVD 또는 화학기상증착(Chemical Vapor Deposition, 이하에서 CVD라 함) 방법으로 실시하되, 아르곤가스를10~40sccm, 빽사이드(back side) 아르곤가스를 10~30sccm, 압력을 4000~8000mTorr, 전원전압을 2~6KW, 증착시간을 5~12초의 시간ㅇ로 하여 실시한다.At this time, the first titanium film 15 is deposited by PVD or Chemical Vapor Deposition (CVD) method, and argon gas is supplied at 10 to 40 sccm, back side argon gas 10 to 30 sccm, a pressure of 4000 to 8000 mTorr, a power supply voltage of 2 to 6 kW, and a deposition time of 5 to 12 seconds.
여기서, 상기 빽사이드 아르곤가스는 상기 웨이퍼 열이 전달될 수 있도록 플로우시켜 주는 가스를 말한다.(제1A도)Here, the backside argon gas refers to a gas that flows to allow the wafer row to be transferred (see FIG. 1A).
그 다음에, 상기 증착챔버에 질소가스(19)를 40~100sccm 유량만큼 첨가한 증착공정을 실시하여 상기 제1티탄늄막(15) 상부에 제1티타늄질화막(21)을 1000~1500Å 정도의 두께로 형성한다.Next, a deposition process is performed in which a nitrogen gas (19) is added to the deposition chamber at a flow rate of 40 to 100 sccm, and a first titanium nitride film (21) is deposited on the first titanium nitride film .
이때, 상기 제1티타늄질화막(21) 증착공정은 아르곤가스를 10~40sccm, 질소가스를 40~100sccm, 빽사이드 아르곤가스를 10~30sccm, 압력을 4000~8000mTorr, 전원전압을 4~10KW, 증착시간을 50~70초의 시간으로 하여 실시한다.(제1B도)At this time, the first titanium nitride film 21 is deposited by depositing 10 to 40 sccm of argon gas, 40 to 100 sccm of nitrogen gas, 10 to 30 sccm of backside argon gas, 4000 to 8000 mTorr of pressure, And the time is 50 to 70 seconds. (Fig. 1B)
그 다음에, 상기 증착챔버에 질소가스(19)을 주입하지 않고 아르곤가스 만을 주입하여 상기 제1티타늄질화막(21) 상부에 제2티타늄막(25)을 30~100Å 정도의 두께로 형성함으로써 제1티타늄막(15)/제1티타늄질화막(21)/제2티타늄막(25)의 적층구조로 장벽금속층을 형성한다.Then, only the argon gas is injected into the deposition chamber without injecting the nitrogen gas 19 to form the second titanium film 25 on the first titanium nitride film 21 to a thickness of about 30 to 100 angstroms 1 titanium film 15 / the first titanium nitride film 21 / the second titanium film 25 to form a barrier metal layer.
여기서, 상기 티타늄 타겟(13)은 표면에 제2티타늄질화막(23)이 얇게 형성되어, 상기 제2티타늄막(25)은 사실상 제2티타늄질화막(23)을 타겟으로 하여 증착했기 때문에 대부분이 티타늄질화막으로 형성된 것이다.Since the second titanium nitride film 23 is thinly formed on the surface of the titanium target 13 and the second titanium nitride film 25 is deposited on the second titanium nitride film 23 as a target, Nitride film.
이때, 상기 제2티타늄막(25) 증착공정은 아르곤가스를 10~30sccm, 빽사이드 아르곤가스를 10~20sccm, 압력을 4000~6000mTorr, 전원전압을 1~10KW, 증착시간을 1~10초의 시간으로 하여 실시한다.The deposition of the second titanium film 25 may be performed at a time of 10 to 30 sccm for argon gas, 10 to 20 sccm for a backside argon gas, 4 to 6000 mTorr for a pressure, 1 to 10 kW for a power supply voltage, .
이상에서 설명한 바와같이 본 발명에 따른 장벽금속층 형성방법은, 하나의 증착챔버에서 Ti/TiN/Ti 적층구조의 장벽금속층을 형성하되, Ti 번인 공정을 스스로 해결하고 공정시간 및 공정단가를 절감하며, 오염에 의한 파티클을 감소시켜 반도체소자의 특성 및 신뢰성을 향상시키고 그에 따른 반도체소자의 고집적화를 가능하게 하는 잇점이 있다.As described above, the barrier metal layer forming method of the present invention is a method of forming a barrier metal layer of a Ti / TiN / Ti laminated structure in one deposition chamber, which can solve the Ti burning process by itself, There is an advantage in that the particles due to contamination are reduced to improve the characteristics and reliability of the semiconductor device and thus the high integration of the semiconductor device.
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| KR100730478B1 (en) * | 2006-05-24 | 2007-06-19 | 동부일렉트로닉스 주식회사 | Semiconductor device manufacturing method |
| CN120834080A (en) * | 2025-09-16 | 2025-10-24 | 江苏邑文微电子科技有限公司 | A method for filling contact holes in integrated circuit technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100730478B1 (en) * | 2006-05-24 | 2007-06-19 | 동부일렉트로닉스 주식회사 | Semiconductor device manufacturing method |
| CN120834080A (en) * | 2025-09-16 | 2025-10-24 | 江苏邑文微电子科技有限公司 | A method for filling contact holes in integrated circuit technology |
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