KR19980013611A - 자성 박막 형성을 위한 스파터링 타겟 및 그 제조방법 - Google Patents
자성 박막 형성을 위한 스파터링 타겟 및 그 제조방법 Download PDFInfo
- Publication number
- KR19980013611A KR19980013611A KR1019960032163A KR19960032163A KR19980013611A KR 19980013611 A KR19980013611 A KR 19980013611A KR 1019960032163 A KR1019960032163 A KR 1019960032163A KR 19960032163 A KR19960032163 A KR 19960032163A KR 19980013611 A KR19980013611 A KR 19980013611A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide powder
- oxide
- powder
- sputtering target
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C33/00—Making ferrous alloys
- C22C33/02—Making ferrous alloys by powder metallurgy
- C22C33/0235—Starting from compounds, e.g. oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
- H01F10/20—Ferrites
- H01F10/205—Hexagonal ferrites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (6)
- 바륨산화물 분말, 스트론튬산화물 분말 및 납산화물 분말로 구성되는 군으로부터 선택되는 하나 이상의 제 1 산화물 분말과 철분말로 이루어지는, 자성박막 형성을 위한 스파터링 타겟.
- 제 1 항에 있어서, 철분말대 하나 제 1 산화물 분말의 비가 원자비로 11:1 에서 13:1 인 것을 특징으로 하는, 자성박막 형성을 위한 스파터링 타겟.
- 제 1 항에 있어서, 상기 혼합물에 부가하여 티타늄산화물 분말, 코발트산화물 분말, 실리콘산화물 분말 및 망간산화물 분말로 구성되는 군으로부터 선택되는 하나 이상의 제 2 산화물을 제 1 산화물의 첨가량 이하가 되도록 포함하는 것을 특징으로 하는, 자성박막 형성을 위한 스파터링 타켓.
- 철분말과 제 1 산화물 분말의 혼합체 또는 철분말과 제 1 산화물 분말, 제 2 산화물 분말의 혼합체를 O.3톤/cm2이상의 압력에서 냉간 정수압 가압 성형하는 단계, 상기 성형체를 진공 또는 비산화성 분위기에서 소결하는 단계로 이루어지는, 자성박막 형성을 위한 스파터링 타겟의 제조방법.
- 제 4 항에 있어서, 상기 성형체를 소결하는 분위기가 수소 분위기 또는 아르곤 분위기인 것을 특징으로 하는, 자성박막 형성을 위한 스파터링 타겟의 제조방법.
- 철분말과 제 1 산화물 분말의 혼합체 또는 철분말과 제 1 산화물, 제 2 산화물분말의 혼합체를 O.3톤/cm2이상의 압력에서 냉간 정수압 가압 성형하는 단계, 상기 성형체를 O.2톤/cm2이상의 압력에서 열간 정수압 가압하는 단계로 이루어지는, 자성박막 형성을 위한 스파터링 타겟의 제조방법.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960032163A KR100237316B1 (ko) | 1996-08-01 | 1996-08-01 | 자성 박막 형성을 위한 스파터링 타겟 및 그 제조방법 |
| US08/805,742 US5955685A (en) | 1996-08-01 | 1997-02-25 | Sputtering target for forming magnetic thin film and fabrication method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960032163A KR100237316B1 (ko) | 1996-08-01 | 1996-08-01 | 자성 박막 형성을 위한 스파터링 타겟 및 그 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980013611A true KR19980013611A (ko) | 1998-05-15 |
| KR100237316B1 KR100237316B1 (ko) | 2000-01-15 |
Family
ID=19468546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960032163A Expired - Fee Related KR100237316B1 (ko) | 1996-08-01 | 1996-08-01 | 자성 박막 형성을 위한 스파터링 타겟 및 그 제조방법 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5955685A (ko) |
| KR (1) | KR100237316B1 (ko) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6713391B2 (en) | 1997-07-11 | 2004-03-30 | Honeywell International Inc. | Physical vapor deposition targets |
| KR20010021722A (ko) | 1997-07-11 | 2001-03-15 | 존슨매테이일렉트로닉스, 인코퍼레이티드 | 내부 금속성인 알루미늄 화합물 및 규소 화합물 스퍼터링타겟과 그의 생성방법 |
| US6484107B1 (en) | 1999-09-28 | 2002-11-19 | Rosemount Inc. | Selectable on-off logic modes for a sensor module |
| US6504489B1 (en) | 2000-05-15 | 2003-01-07 | Rosemount Inc. | Process control transmitter having an externally accessible DC circuit common |
| US20080078268A1 (en) | 2006-10-03 | 2008-04-03 | H.C. Starck Inc. | Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof |
| US20080145688A1 (en) | 2006-12-13 | 2008-06-19 | H.C. Starck Inc. | Method of joining tantalum clade steel structures |
| US20080173543A1 (en) * | 2007-01-19 | 2008-07-24 | Heraeus Inc. | Low oxygen content, crack-free heusler and heusler-like alloys & deposition sources & methods of making same |
| US8197894B2 (en) | 2007-05-04 | 2012-06-12 | H.C. Starck Gmbh | Methods of forming sputtering targets |
| US8246903B2 (en) | 2008-09-09 | 2012-08-21 | H.C. Starck Inc. | Dynamic dehydriding of refractory metal powders |
| US9120183B2 (en) | 2011-09-29 | 2015-09-01 | H.C. Starck Inc. | Methods of manufacturing large-area sputtering targets |
| JP2015190017A (ja) * | 2014-03-28 | 2015-11-02 | 三菱マテリアル株式会社 | 軟磁性薄膜形成用スパッタリングターゲット |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54113097A (en) * | 1978-01-27 | 1979-09-04 | Victor Co Of Japan Ltd | Cermet type magnetic substance |
| US4999260A (en) * | 1984-05-31 | 1991-03-12 | Canon Kabushiki Kaisha | Magneto-optical recording medium comprising a rare-earth-transition metal dispersed in a dielectric |
| JPH01144249A (ja) * | 1987-11-30 | 1989-06-06 | Ricoh Co Ltd | 光磁気記録媒体 |
| JP2950912B2 (ja) * | 1990-05-22 | 1999-09-20 | ティーディーケイ株式会社 | 軟磁性薄膜 |
| JPH05315180A (ja) * | 1992-04-06 | 1993-11-26 | Kobe Steel Ltd | 高密度記録用磁性膜を形成するためのスパッタリングターゲット材およびその製法 |
| KR0141194B1 (ko) * | 1994-06-10 | 1998-07-15 | 김광호 | 스퍼터링용 타아게트의 제조방법 |
-
1996
- 1996-08-01 KR KR1019960032163A patent/KR100237316B1/ko not_active Expired - Fee Related
-
1997
- 1997-02-25 US US08/805,742 patent/US5955685A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5955685A (en) | 1999-09-21 |
| KR100237316B1 (ko) | 2000-01-15 |
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