KR102764911B1 - Substrate processing apparatus - Google Patents

Abstract

The present invention relates to a substrate processing device, and more particularly, to a substrate processing device equipped with a showerhead manufactured with reference to a substrate map.
A substrate processing device according to an embodiment of the present invention comprises: a process chamber providing a process processing space for a substrate process; and a showerhead provided in the process chamber and spraying a process gas onto the substrate, wherein the showerhead comprises: an injection body receiving the process gas; and an injection section disposed on one side of the injection body and spraying the process gas introduced into the injection body; and the injection body comprises a baffle plate manufactured using map data regarding a thickness distribution of a thin film deposited on a test substrate by the process gas sprayed from the injection section.

Description

Substrate processing apparatus

The present invention relates to a substrate processing device, and more particularly, to a substrate processing device equipped with a showerhead manufactured with reference to a substrate map.

Chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used to deposit a thin film on a substrate. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a chemical reaction of a raw material gas on the surface of a substrate. In particular, in the case of atomic layer deposition, since one layer of the raw material gas attached to the surface of the substrate forms a thin film, it is possible to form a thin film with a thickness similar to the diameter of an atom.

It is desirable that the thin film be formed with a uniform thickness over the entire surface of the substrate. However, depending on the characteristics of the showerhead, the thickness of the thin film may be formed unevenly. If the thickness of the thin film is formed unevenly, the defect rate may increase.

Therefore, there is a need for an invention that enables a thin film to be deposited on a substrate with a uniform thickness regardless of the characteristics of the showerhead.

Republic of Korea Patent Publication No. 10-0509231 (August 22, 2005)

The problem to be solved by the present invention is to provide a substrate processing device equipped with a showerhead manufactured with reference to a substrate map.

The tasks of the present invention are not limited to the tasks mentioned above, and other tasks not mentioned will be clearly understood by those skilled in the art from the description below.

A substrate processing device according to an embodiment of the present invention comprises: a process chamber providing a process processing space for a substrate process; and a showerhead provided in the process chamber and spraying a process gas onto the substrate, wherein the showerhead comprises: an injection body receiving the process gas; and an injection section disposed on one side of the injection body and spraying the process gas introduced into the injection body; and the injection body comprises a baffle plate manufactured using map data regarding a thickness distribution of a thin film deposited on a test substrate by the process gas sprayed from the injection section.

The above baffle plate is arranged on the inner side of the injection body opposite to the injection direction of the injection unit.

The above baffle plate has a shape in which the distance from the injection unit increases as the thickness of the thin film deposited on the test substrate increases.

The above baffle plate has a shape in which the distance from the injection unit increases or decreases as it progresses from the center to the edge.

A portion of the surface of the baffle plate facing the injection unit has a raised or sunken shape.

The above baffle plate is detachable from the injection body.

Specific details of other embodiments are included in the detailed description and drawings.

According to the substrate processing device according to the embodiment of the present invention as described above, there is an advantage in that a thin film can be deposited on a substrate with a uniform thickness regardless of the characteristics of the showerhead.

Figure 1 is a drawing showing a substrate processing device according to an embodiment of the present invention.
Figure 2 is a drawing showing that the substrate support has moved to the process point.
Figure 3 is a drawing showing a thin film deposited so that the thickness decreases as it progresses from the center to the edge of the substrate.
Figure 4 is a drawing showing a thin film deposited so that the thickness increases as it progresses from the center to the edge of the substrate.
Figure 5 is a drawing showing a thin film deposited so that its thickness varies in some areas of the substrate.
Figure 6 is a drawing showing a thin film deposited so as to include a raised portion.
Figure 7 is a drawing showing a thin film deposited so as to include a sunken portion.
Figure 8 is a drawing showing that a thin film is deposited so that raised and sunken portions are repeated along the circumferential direction of the substrate.
Figure 9 is a drawing showing that the shape of the baffle plate is formed so that the distance between the injection part and the baffle plate decreases as it progresses from the center to the edge of the baffle plate.
Figure 10 is a drawing showing that the shape of the baffle plate is formed so that the distance between the injection part and the baffle plate increases as it progresses from the center to the edge of the baffle plate.
Figure 11 is a drawing showing that the shape of the baffle plate is formed so that the distance from the injection unit changes in some areas.
Figure 12 is a drawing showing the shape of the baffle plate formed to include a sunken portion.
Figure 13 is a drawing showing the shape of a baffle plate formed to include a raised portion.
Figure 14 is a drawing to explain that the baffle plate is detachable from the injection body.
Figure 15 is a block diagram of a showerhead manufacturing device according to an embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become apparent with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, and the present embodiments are provided only to make the disclosure of the present invention complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Unless otherwise defined, all terms (including technical and scientific terms) used in this specification may be used with a meaning that can be commonly understood by a person of ordinary skill in the art to which the present invention belongs. In addition, terms defined in commonly used dictionaries shall not be ideally or excessively interpreted unless explicitly specifically defined.

FIG. 1 is a drawing showing a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a drawing showing a substrate support member moved to a process point.

Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a cover (200), a substrate support unit (300), a driving unit (400), a showerhead (500), and a control unit (600).

The process chamber (100) provides a process treatment space for the process of the substrate (700). The process chamber (100) may include an exhaust duct (110), an exhaust port (120), and an exhaust transfer hole (130). The exhaust duct (110) may provide a path for discharging exhaust gases such as process gases or byproducts introduced into the process chamber (100) to the outside. For example, the exhaust duct (110) may be arranged in a ring shape along the inner edge of the process chamber (100).

The exhaust port (120) may be formed at the bottom of the process chamber (100). The exhaust transfer hole (130) may connect the exhaust duct (110) and the exhaust port (120) to provide a transfer path for the exhaust moving from the exhaust duct (110) to the exhaust port (120). The exhaust transferred from the inside of the process chamber (100) to the exhaust duct (110) may be discharged to the outside of the process chamber (100) through the exhaust transfer hole (130).

A substrate entrance (140) for entering and exiting a substrate (700) may be formed on one side of the process chamber (100). The substrate (700) may be introduced into or taken out of the process chamber (100) through the substrate entrance (140).

A shutter (150) may be provided at the substrate entrance (140). The shutter (150) may open or close the substrate entrance (140). When the shutter (150) opens the substrate entrance (140), a substrate (700) may be brought in or taken out through the substrate entrance (140). When a process for the substrate (700) is in progress, the shutter (150) may close the substrate entrance (140) to block the inside of the process chamber (100) from the outside.

The cover (200) serves to seal the upper opening of the process chamber (100). To this end, the cover (200) may be placed on the upper portion of the process chamber (100). The cover (200) may be placed while being laminated on the spray body (510) of the showerhead (500) described below. As the cover (200) seals the upper opening of the process chamber (100), the outflow of process gas and the inflow of external substances through the upper opening of the process chamber (100) may be prevented.

The cover (200) may include a cover plate (210), a process gas inlet (220), and a process gas inlet pipe (230). The cover plate (210) may be provided in the form of a plate to seal the upper opening of the process chamber (100). The process gas inlet (220) and the process gas inlet pipe (230) may provide a transport path for the process gas.

The process gas inlet (220) is coupled to the cover plate (210), and the process gas inlet pipe (230) can be coupled to the process gas inlet (220). The process gas inlet pipe (230) can be directly or indirectly connected to a process gas tank (not shown). The process gas contained in the process gas tank is transported through the process gas inlet pipe (230), and the transported process gas can be delivered to the showerhead (500) through the process gas inlet (220).

The substrate support (300) can support the substrate (700). The substrate support (300) can have a mounting surface on which the substrate (700) can be mounted. A process can be performed on the substrate (700) mounted on the mounting surface of the substrate support (300).

The substrate support member (300) can heat the substrate (700). To this end, a heater (not shown) may be provided inside the substrate support member (300). Heat emitted from the heater may be transferred to the substrate (700) through the body of the substrate support member (300).

The substrate support (300) may include a grounded electrode (not shown). As described below, when RF power is supplied to the showerhead (500), an electric field may be formed between the showerhead (500) and the substrate support (300).

The substrate support member (300) may be provided with a support pin (310). The support pin (310) may support the substrate (700). Specifically, the support pin (310) may support the substrate (700) such that the substrate (700) is spaced apart from the mounting surface of the substrate support member (300) by a certain distance.

In the present invention, the substrate support member (300) can move up and down inside the process chamber (100). The driving member (400) can generate a driving force to move the substrate support member (300) up and down. FIG. 1 illustrates that the substrate support member (300) is secured on the bottom surface of the process chamber (100), and FIG. 2 illustrates that the substrate support member (300) has moved to an upper point inside the process chamber (100).

When the substrate (700) is brought into or taken out of the process chamber (100), the substrate support member (300) may be placed on the bottom surface of the process chamber (100) as illustrated in FIG. 1. When a process is performed on the substrate (700), the substrate support member (300) may move to an upper point inside the process chamber (100) as illustrated in FIG. 2. Hereinafter, the position of the substrate support member (300) where a process is performed on the substrate (700) is referred to as a process point.

When a process is performed on a substrate (700), it is preferable that the substrate (700) be seated on the mounting surface of the substrate support member (300). As the substrate (700) is seated on the mounting surface of the substrate support member (300), the process on the substrate (700) can be performed in a state where movement of the substrate (700) is prevented.

Meanwhile, when the substrate (700) is brought into or taken out of the process chamber (100), it is preferable that the substrate (700) be spaced apart from the mounting surface of the substrate support member (300). The hand (not shown) of a transport robot (not shown) transporting the substrate (700) can support the lower side of the substrate (700) and transport the substrate (700). In order for the hand of the transport robot to approach the lower side of the substrate (700), the substrate (700) must be spaced apart from the mounting surface of the substrate support member (300) by a certain distance.

The support pin (310) can support the substrate (700) so that the substrate (700) is spaced from the mounting surface of the substrate support member (300). The support pin (310) can include a pin head (311) and a pin body (312). The pin head (311) can directly contact the lower surface of the substrate (700). The pin body (312) can be formed to extend downward from the pin head (311). The pin body (312) can be provided in the shape of a straight bar. The pin body (312) can penetrate the substrate support member (300). To this end, a through hole can be formed in the substrate support member (300).

The pin body (312) can move freely along the through hole. When the substrate support member (300) is secured to the bottom surface of the process chamber (100), the lower end of the pin body (312) comes into contact with the bottom surface of the process chamber (100), so that the pin head (311) can be separated from the securing surface of the substrate support member (300). In this case, the substrate (700) supported by the pin head (311) can be separated from the securing surface of the substrate support member (300). Meanwhile, when the substrate support member (300) rises, the pin body (312) can move along the through hole and the supporting pin (310) can be lowered with respect to the substrate support member (300). The lowering of the supporting pin (310) can be performed until the pin head (311) is inserted into the head receiving groove (320) of the substrate support member (300). When the pin head (311) is inserted into the head receiving groove (320), the support of the substrate (700) by the pin head (311) is released, and the substrate (700) can be supported on the mounting surface of the substrate support member (300).

The diameter of the pin head (311) may be formed larger than the diameter of the pin body (312). The diameter of the head receiving groove (320) may be formed larger than the diameter of the through hole, and the diameter of the pin head (311) may be formed larger than the diameter of the through hole. When the substrate support member (300) rises while the pin head (311) is inserted into the head receiving groove (320), the support pin (310) may also rise together with the substrate support member (300). When the substrate support member (300) rises and is positioned at the process point, the substrate (700) may remain seated on the seating surface of the substrate support member (300).

The showerhead (500) serves to spray process gas for a process on the substrate (700) onto the substrate (700). The showerhead (500) can receive process gas from the process gas inlet (220). The showerhead (500) can be placed at the top of the process chamber (100). The process gas sprayed from the showerhead (500) is sprayed downward and reaches the substrate (700).

In the present invention, the process gas may include a source gas and a reaction gas. The source gas and the reaction gas may be sequentially injected. The source gas and the reaction gas may collide with each other and react after being injected from the showerhead (500). Then, the source gas activated by the reaction gas may contact the substrate (700) to perform process treatment on the substrate (700). For example, the activated source gas may be deposited as a thin film on the substrate (700).

The showerhead (500) may include a spray body (510), a spray portion (520), a guide ring (530), and a baffle plate (540). The spray body (510) may receive a process gas. To this end, the spray body (510) may be positioned adjacent to the process gas inlet portion (220). In addition, the spray body (510) may receive RF power. For example, an electrode plate (not shown) that receives RF power may be provided on a ceiling surface of the spray body (510). As described above, the substrate support (300) may include a grounded electrode. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrode of the substrate support (300). The process gas introduced into the process chamber (100) is converted into particles in a plasma state by an electric field formed by the supply of RF power, and the plasma particles react with each other or with the surface of the substrate (700), so that process treatment can be performed on the substrate (700).

The injection unit (520) is arranged on one side of the injection body (510) and performs the function of injecting the process gas that has flowed into the injection body (510). To this end, the injection unit (520) may be provided with an injection hole (521) for injecting the process gas. The injection holes (521) may be formed in multiple numbers in the injection unit (520) in a shape corresponding to one side of the substrate (700).

A diffusion space (S) may be formed between the injection body (510) and the injection portion (520). The process gas introduced through the injection body (510) may be diffused in the diffusion space (S) and then injected through a plurality of injection holes (521).

The guide ring (530) can wrap around the edges of the spray body (510) and the spray part (520) in the form of a ring. In the present invention, the spray body (510) and the spray part (520) can be combined. The guide ring (530) can wrap around the combined portion of the spray body (510) and the spray part (520). The guide ring (530) can prevent the process gas from leaking through the combined portion of the spray body (510) and the spray part (520).

In addition, the guide ring (530) serves to guide the exhaust gas from which the process for the substrate (700) is completed to the exhaust duct (110). The process chamber (100) may be equipped with a chamber ring (160). The chamber ring (160) may be arranged in the shape of a ring inside the process chamber (100). The chamber ring (160) may surround the edge of the substrate support member (300) located at the process point. A space for transporting the exhaust gas (hereinafter, referred to as a transport space) may be formed between the guide ring (530) and the chamber ring (160). The exhaust gas, such as the process gas and the reaction gas from which the process for the substrate (700) is completed, may move to the exhaust duct (110) through the transport space. Since the size of the exhaust duct (110) is relatively larger than the size of the transport space, the pressure of the exhaust duct (110) may be formed to be smaller than the pressure of the transport space. Due to this, the exhaust from the exhaust duct (110) can be prevented from flowing back into the transport space.

The baffle plate (540) may be placed on the inner surface of the spray body (510) opposite to the spraying direction of the spray unit (520). The aforementioned diffusion space (S) may be formed by the spray unit (520) and the baffle plate (540).

An edge ring (330) may be formed on the substrate support member (300). The edge ring (330) may be arranged in a ring shape along the edge of the substrate support member (300). The edge ring (330) may prevent the process gas from moving to the lower space of the process chamber (100). When the substrate support member (300) is located at the process point, the edge ring (330) may be spaced apart from the chamber ring (160) by a predetermined interval. In a state where the edge ring (330) and the chamber ring (160) are spaced apart by a predetermined interval, a purge gas may be supplied to the lower space of the process chamber (100), and the supplied purge gas may be provided to the upper space of the process chamber (100) through the gap between the edge ring (330) and the chamber ring (160). Accordingly, the process gas supplied to the upper space of the process chamber (100) is blocked from moving to the lower space, and the process gas can move to the exhaust port (120) through the exhaust duct (110) and the exhaust transfer hole (130). Here, the upper space may represent a space where the process gas is introduced and a process is performed on the substrate (700), and the lower space may represent a space excluding the upper space. As the gas movement between the upper space and the lower space is blocked, the density of the process gas introduced to the upper space is maintained, and the reaction efficiency of the process gas reacting with the substrate (700) can be improved.

The control unit (600) can perform overall control of the substrate processing device (10). For example, the control unit (600) can operate the shutter (150) to open and close the substrate entrance (140), or control the driving unit (400) to move the substrate support unit (300). In addition, the control unit (600) can control the spraying of source gas or reaction gas through the showerhead (500) or the supply of RF power to the electrode plate of the showerhead (500).

The substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (700). Specifically, the substrate processing device (10) can deposit a thin film on the substrate (700) using a plasma enhanced chemical vapor deposition (PECVD) method or a plasma enhanced atomic layer deposition (PEALD) method.

It is preferable that the thin film be deposited with a uniform thickness over the entire area of the substrate (700). Meanwhile, the thickness of the thin film deposited on the substrate (700) may not be formed uniformly due to design errors or manufacturing errors. For example, the injection unit (520) includes a plurality of injection holes (521), and the process gas may be concentrated on a portion of the substrate (700) due to the spacing between the injection holes (521), diameter, injection direction, etc., so that the thickness of the thin film may be formed thicker.

Figures 3 to 8 illustrate that the thickness of the thin film deposited on the substrate (700) is formed unevenly in various ways.

FIG. 3 is a drawing showing a thin film deposited so that its thickness decreases as it progresses from the center to the edge of the substrate, FIG. 4 is a drawing showing a thin film deposited so that its thickness increases as it progresses from the center to the edge of the substrate, FIG. 5 is a drawing showing a thin film deposited so that its thickness changes in some areas of the substrate, FIG. 6 is a drawing showing a thin film deposited so that a raised portion is included, FIG. 7 is a drawing showing a thin film deposited so that a sunken portion is included, and FIG. 8 is a drawing showing a thin film deposited so that raised portions and sunken portions are repeated along the circumferential direction of the substrate.

As illustrated in FIG. 3, the thin film (800) can be deposited so that its thickness decreases as it progresses from the center to the edge of the substrate (700). FIG. 3 illustrates that the thickness of the thin film (800) decreases as it progresses toward the edge over the entire area of the substrate (700).

As illustrated in FIG. 4, the thin film (800) can be deposited so that its thickness increases from the center of the substrate (700) to the edge. FIG. 4 illustrates that the thickness of the thin film (800) increases as it progresses toward the edge over the entire area of the substrate (700).

As illustrated in FIG. 5, the thin film (800) may be deposited so that its thickness varies in some areas of the substrate (700). FIG. 5 illustrates that the thickness of the thin film (800) is uniformly formed in some areas of the substrate (700), and that the thickness of the thin film (800) increases from the center to the edge of the substrate (700) in other areas of the substrate (700).

As shown in FIGS. 6 and 7, the thin film (800) may include a raised portion or a sunken portion. As shown in FIG. 8, the thin film (800) may include a raised portion and a sunken portion along the circumferential direction of the substrate (700). In FIG. 8, the shaded area represents the raised portion, and the remaining area represents the sunken portion.

If process gases injected from adjacent injection holes (521) overlap, a raised portion may be formed, and if process gases are not injected to a specific area of the substrate (700), a sunken portion may be formed.

In this way, the thickness of the thin film (800) formed on the substrate (700) may be formed unevenly in various ways. If the thin film (800) is formed unevenly, a product manufactured through it may provide degraded performance or malfunction.

The substrate (700) processing device according to an embodiment of the present invention can prevent the thickness of the thin film (800) deposited on the substrate (700) from being formed unevenly due to design errors, manufacturing errors, etc. Specifically, the substrate processing device (10) can appropriately form the pressure distribution of the process gas sprayed from the spray unit (520) so that the thickness of the thin film (800) is formed uniformly. To this end, the substrate processing device (10) can include an appropriate baffle plate (540). The pressure of the process gas is adjusted according to the distance between the baffle plate (540) and the spray unit (520), so that the thickness of the thin film (800) can be formed uniformly.

FIG. 9 is a drawing showing that the shape of the baffle plate is formed so that the distance between the injection part (520) and the baffle plate decreases as it progresses from the center of the baffle plate to the edge.

Referring to FIG. 9, the baffle plate (540) of the substrate processing device (10) according to the embodiment of the present invention may be formed so that the distance between the injection unit (520) and the baffle plate (540) decreases as it progresses from the center to the edge.

In this case, the process gas can be sprayed at a higher pressure at the edge of the spray unit (520) than at the center of the spray unit (520). Accordingly, the process gas can be sprayed at a higher pressure at the edge than at the center of the substrate (700), and the thickness of the thin film (800) formed at the edge of the substrate (700) can be supplemented.

As illustrated in FIG. 3, when a thin film (800) is deposited so that the thickness decreases from the center to the edge of the substrate (700), a thin film (800) having a uniform thickness can be formed over the entire area of the substrate (700) by applying the baffle plate (540) illustrated in FIG. 9.

Figure 10 is a drawing showing that the shape of the baffle plate is formed so that the distance between the injection part and the baffle plate increases as it progresses from the center to the edge of the baffle plate.

Referring to FIG. 10, the baffle plate (540) of the substrate processing device (10) according to the embodiment of the present invention may be formed so that the distance between the injection unit (520) and the baffle plate (540) increases as it progresses from the center to the edge.

In this case, the process gas can be sprayed at a higher pressure at the center of the spray unit (520) than at the edge of the spray unit (520). Accordingly, the process gas can be sprayed at a higher pressure at the center than at the edge of the substrate (700), and the thickness of the thin film (800) formed at the center of the substrate (700) can be supplemented.

As illustrated in FIG. 4, when a thin film (800) is deposited so that the thickness increases from the center to the edge of the substrate (700), a thin film (800) having a uniform thickness can be formed over the entire area of the substrate (700) by applying the baffle plate (540) illustrated in FIG. 10.

Figure 11 is a drawing showing that the shape of the baffle plate is formed so that the distance from the injection unit changes in some areas.

Referring to FIG. 11, the baffle plate (540) of the substrate processing device (10) according to the embodiment of the present invention may be formed so that the distance from the injection unit (520) changes in some areas.

In this case, the process gas may be sprayed at a uniform pressure in some areas of the injection unit (520), and in areas where the distance changes, the process gas may be sprayed at a pressure according to the distance between the baffle plate (540) and the injection unit (520).

As illustrated in FIG. 5, when a thin film (800) is deposited so that its thickness varies in some areas of the substrate (700), a thin film (800) having a uniform thickness can be formed over the entire area of the substrate (700) by applying the baffle plate (540) illustrated in FIG. 11.

Fig. 12 is a drawing showing that the shape of the baffle plate is formed to include a sunken portion, and Fig. 13 is a drawing showing that the shape of the baffle plate is formed to include a raised portion.

Referring to FIGS. 12 and 13, the baffle plate (540) of the substrate processing device (10) according to the embodiment of the present invention may include a sunken portion or a raised portion.

The sunken portion and the raised portion may be formed toward the injection unit (520). A lower pressure may be formed in the sunken portion compared to other portions, and a higher pressure may be formed in the raised portion compared to other portions.

As illustrated in FIG. 6, when a raised thin film (800) is formed on a substrate (700), a thin film (800) having a uniform thickness can be formed over the entire area of the substrate (700) by applying the baffle plate (540) illustrated in FIG. 12. In addition, as illustrated in FIG. 7, when a sunken thin film (800) is formed on a substrate (700), a thin film (800) having a uniform thickness can be formed over the entire area of the substrate (700) by applying the baffle plate (540) illustrated in FIG. 13.

Figure 14 is a drawing to explain that the baffle plate is detachable from the injection body.

Referring to FIG. 14, the baffle plate (540) of the substrate processing device (10) according to the embodiment of the present invention can be detached from the injection body (510).

Different baffle plates (540) can be coupled or decoupled from the spray body (510). A user can select an appropriate baffle plate (540) by referring to the thickness distribution of the thin film (800) formed on the substrate (700) and couple it to the spray body (510). The baffle plate (540) can be coupled to the spray body (510) by a coupling means such as a screw or can be coupled to the spray body (510) by using a separate fastening means.

FIG. 15 is a block diagram of a showerhead manufacturing device according to an embodiment of the present invention.

Referring to FIG. 15, a showerhead manufacturing device (900) according to an embodiment of the present invention is configured to include an input unit (910), a storage unit (920), a control unit (930), a map data analysis unit (940), a modeling unit (950), and a plate manufacturing unit (960).

The input unit (910) serves to receive map data regarding the thickness distribution of a thin film (800) deposited on a test substrate by a process gas sprayed from a showerhead (500).

A baffle plate (540) having a flat shape is used to deposit a thin film (800) on a test substrate, and map data for the thin film (800) can be generated. The map data can be generated using a separate map data generation device (not shown) for this purpose. The map data generation device can irradiate an X-ray or laser to the surface of a test substrate on which the thin film (800) is deposited to check the thickness distribution of the thin film (800) and generate map data. The input unit (910) can receive the corresponding map data.

The storage unit (920) can temporarily or permanently store map data input through the input unit (910). In addition, the storage unit (920) can also store modeling data generated by the modeling unit (950) described below.

The map data analysis unit (940) can analyze map data input through the input unit (910). For example, the map data analysis unit (940) can check the thickness distribution of a thin film (800) deposited on a test substrate.

The modeling unit (950) can model the shape of the baffle plate (540) of the showerhead (500) based on the analysis results of the map data analysis unit (940). The modeling unit (950) can model the shape of the baffle plate (540) so that the distance between the spray unit (520) and the baffle plate (540) increases as the thickness of the thin film (800) deposited on the test substrate increases. Similarly, the modeling unit (950) can model the shape of the baffle plate (540) so that the distance between the spray unit (520) and the baffle plate (540) decreases as the thickness of the thin film (800) deposited on the test substrate decreases.

As the distance between the injection unit (520) and the baffle plate (540) increases, the process gas can be injected at a high pressure in the corresponding area, and as the distance between the injection unit (520) and the baffle plate (540) decreases, the process gas can be injected at a low pressure in the corresponding area.

The modeling unit (950) can model the shape of the baffle plate (540) so that the distance between the injection unit (520) and the baffle plate (540) increases or decreases as it progresses from the center of the baffle plate (540) to the edge. For example, the modeling unit (950) can model the shape of the baffle plate (540) illustrated in FIG. 9 or FIG. 10.

The modeling unit (950) can model the shape of the baffle plate (540) so that a portion of the surface of the baffle plate (540) facing the injection unit (520) is raised or sunken. For example, the modeling unit (950) can model the shape of the baffle plate (540) illustrated in FIGS. 11 to 13.

The modeling unit (950) can model the shape of the baffle plate (540) and transmit the modeling results to the plate manufacturing unit (960).

The plate manufacturing unit (960) can manufacture the baffle plate (540) by referring to the modeling result of the modeling unit (950). For example, the plate manufacturing unit (960) can manufacture the baffle plate (540) in any one shape of the baffle plates (540) illustrated in FIGS. 9 to 13.

The above describes that the plate manufacturing unit (960) is included in the showerhead manufacturing device (900). However, according to some embodiments of the present invention, the plate manufacturing unit (960) may be provided as a plate manufacturing device (not shown) separate from the showerhead manufacturing device (900). In this case, the showerhead manufacturing device (900) may output a modeling result for the shape of the optimal baffle plate (540) that makes the thickness of the thin film (800) uniform by referring to the analysis result for the map data. The output modeling result may be provided to the plate manufacturing device and used for manufacturing the baffle plate (540).

In addition, when the plate manufacturing unit (960) is provided as a separate plate manufacturing device, the input unit (910), storage unit (920), control unit (930), map data analysis unit (940), and modeling unit (950) may be provided in the substrate processing device (10). In this case, the substrate processing device (10) can analyze the input map data to model the shape of the baffle plate.

The control unit (930) performs overall control over the input unit (910), storage unit (920), map data analysis unit (940), modeling unit (950), and plate manufacturing unit (960).

The baffle plate (540) manufactured by the showerhead manufacturing device (900) can be applied to the substrate processing device (10) according to the embodiment of the present invention. That is, the spray body (510) of the substrate processing device (10) according to the embodiment of the present invention can include the baffle plate (540) manufactured by using map data regarding the thickness distribution of the thin film (800) deposited on the test substrate by the process gas sprayed from the spray unit (520).

At this time, the baffle plate (540) may have a shape in which the distance from the spray unit (520) increases as the thickness of the thin film (800) deposited on the test substrate increases, and may have a shape in which the distance from the spray unit (520) decreases as the thickness of the thin film (800) deposited on the test substrate decreases. In addition, the baffle plate (540) may have a shape in which the distance from the spray unit (520) increases or decreases as it progresses from the center to the edge, or may have a shape in which a portion of its surface facing the spray unit (520) is raised or sunken.

In particular, the baffle plate (540) manufactured by the showerhead manufacturing device (900) is detachable from the spray body (510). Accordingly, the user can form a thin film (800) having a uniform thickness on the substrate (700) by attaching an appropriate baffle plate (540) to the spray body (510) depending on the situation.

Although the embodiments of the present invention have been described with reference to the above and the attached drawings, those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical idea or essential characteristics thereof. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

10: Substrate processing device 100: Process chamber
200: Cover 300: Substrate Support
400: Drive Unit 500: Shower Head
510: Injector body 520: Injector
530: Guide ring 540: Baffle plate
600: Control unit 700: Board
800: Thin film 900: Showerhead manufacturing device
910: Input section 920: Storage section
930: Control Unit 940: Map Data Analysis Unit
950: Modeling Department 960: Plate Manufacturing Department

Claims (7)

A process chamber providing a process treatment space for the substrate process; and
A showerhead is provided in the above process chamber and sprays process gas onto the substrate,
The above shower head,
An injection body that receives the above process gas; and
It includes an injection unit that injects process gas introduced into the injection body through an injection hole provided and arranged on one side of the injection body,
The above-mentioned injection body includes a baffle plate manufactured using map data on the thickness distribution of a thin film deposited on a test substrate by a process gas injected from the above-mentioned injection unit,
A substrate processing device in which a portion of the surface of the baffle plate facing the injection unit has a shape that is raised or sunken toward the injection unit. In the first paragraph,
A substrate processing device in which the baffle plate is placed on the inner side of the spray body opposite to the spraying direction of the spray section. In the first paragraph,
The above baffle plate is a substrate processing device having a shape in which the distance from the injection unit increases as the thickness of the thin film deposited on the test substrate increases. In the first paragraph,
A substrate processing device in which the baffle plate has a shape in which the distance from the injection unit increases or decreases as it progresses from the center to the edge. delete In the first paragraph,
The above baffle plate is a substrate processing device that is detachable from the above injection body. In the first paragraph,
An input unit for receiving map data on the thickness distribution of a thin film deposited on a test substrate by a process gas sprayed from the above showerhead;
A map data analysis unit that analyzes the above map data; and
Further comprising a modeling unit that models the shape of the baffle plate according to the analysis results of the map data analysis unit.
A substrate processing device in which the shape of the above baffle plate has a shape corresponding to the modeling result output by the above modeling unit.

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