KR102703701B1 - Nickel stamp and Method of manufacturing the same - Google Patents

Abstract

A nickel stamp having a plurality of laminated micropatterned layers and a method for manufacturing the same are disclosed.
A nickel stamp includes a nickel base, a first nickel layer formed on the nickel base and having a first micropattern, and a second nickel layer disposed on an upper side of the first nickel layer and having a second micropattern connected to the first micropattern.

Description

Nickel stamp and method of manufacturing the same

The present invention relates to a nickel stamp used in the semiconductor field and a method for manufacturing the same.

Microfluidic devices are typically fabricated using metal stamps with micropatterns for nanometer-level research and experiments.

Among the metal stamps used to manufacture microfluidic devices, nickel stamps made of nickel are frequently used. Nickel has good hardness, tensile strength, and corrosion resistance, so it can be usefully used in the manufacture of molded articles for forming microfluidic channels.

These nickel stamps include a wafer, a photomask placed over a photoresist layer applied on the wafer, a development process in which light is shone on the photomask to remove unexposed areas, and a nickel layer having a micro-pattern formed through a plating process.

However, since conventional nickel stamps have a single nickel layer on the wafer, there is a limit to conducting more complex and in-depth research, and therefore, the need for manufacturing nickel stamps having multiple laminated micropattern layers is increasing.

In order to solve the above problems of the present invention, an object of the present invention is to provide a nickel stamp having a plurality of laminated micropattern layers and a method for manufacturing the same.

According to one embodiment of the present invention for solving the above problem, a nickel stamp includes: a nickel base; a first nickel layer formed on the nickel base and having a first micropattern; a second nickel layer disposed on an upper side of the first nickel layer and having a second micropattern connected to the first micropattern.

The second nickel layer can be formed from the upper surface of the first nickel layer.

The first nickel layer and the second nickel layer may be attached to each other in an integral form.

In addition, a method for manufacturing a nickel stamp according to one embodiment of the present invention includes the steps of: preparing a nickel wafer; forming a first photoresist layer on the nickel wafer; forming a first plating region by removing at least a portion of the first photoresist layer; forming a first nickel layer in the first plating region through electroplating; forming a second photoresist layer on the first photoresist layer remaining on the nickel wafer and the first nickel layer; forming a second plating region by removing at least a portion of the second photoresist layer; forming a second nickel layer in the second plating region through electroplating; and removing the remaining first photoresist layer and the second photoresist layer using a solvent.

The step of forming a first plating region by removing at least a portion of the first photoresist layer may include arranging a first photomask and a light source on an upper side of the first photoresist layer, irradiating light toward the first photomask to form a first exposed region and a first unexposed region in the first photoresist layer, and removing the first unexposed region using a solvent.

The step of forming a second plating region by removing at least a portion of the second photoresist layer may include arranging a second photomask and a light source on an upper side of the second photoresist layer, irradiating light toward the second photomask to form a second exposed region and a second unexposed region in the second photoresist layer, and removing the second unexposed region using a solvent.

A portion of the second photomask may be positioned to overlap with the first nickel layer.

The thickness of the first nickel layer may have a thickness corresponding to the thickness of the first photoresist layer.

The thickness of the second nickel layer may have a thickness corresponding to the thickness of the second photoresist layer.

According to the present invention, since a plurality of micropatterns are connected to each other, research and experiments on various and in-depth structures using microfluid can be conducted.

FIG. 1 is a flowchart illustrating a method for manufacturing a nickel stamp according to one embodiment of the present invention.
Figure 2 is a flow chart illustrating a method for preparing a nickel wafer.
Figure 3 is a drawing illustrating a method for forming a first nickel layer.
Figure 4 is a flowchart illustrating a method for forming a first plating area in a first photoresist layer.
Figure 5 is a drawing illustrating a step of forming a second nickel layer.
Figure 6 is a flowchart illustrating a method for forming a second plating area in a second photoresist layer.

The embodiments described herein may be modified in various ways. Specific embodiments may be depicted in the drawings and described in detail in the detailed description. However, the specific embodiments disclosed in the accompanying drawings are only intended to facilitate understanding of various embodiments. Therefore, the technical idea is not limited by the specific embodiments disclosed in the accompanying drawings, but should be understood to include all equivalents or substitutes included in the spirit and technical scope of the invention.

Terms that include ordinal numbers, such as first, second, etc., may be used to describe various components, but these components are not limited by the above-described terms. The above-described terms are used only for the purpose of distinguishing one component from another.

In this specification, it should be understood that terms such as "include" or "have" are intended to specify the presence of a feature, number, step, operation, component, part or combination thereof described in the specification, but do not exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof. When it is stated that a certain component is "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to the other component, but that other components may also be present in between. On the other hand, when it is stated that a certain component is "directly connected" or "directly connected" to another component, it should be understood that no other components exist in between.

Meanwhile, the "module" or "part" for the component used in this specification performs at least one function or operation. And, the "module" or "part" can perform the function or operation by hardware, software, or a combination of hardware and software. In addition, a plurality of "modules" or a plurality of "parts" excluding a "module" or "part" that must be performed in a specific hardware or performed in at least one processor may be integrated into at least one module. The singular expression includes the plural expression unless the context clearly indicates otherwise.

In addition, when describing the present invention, if it is determined that a specific description of a related known function or configuration may unnecessarily obscure the gist of the present invention, the detailed description thereof is abbreviated or omitted.

Below, various embodiments are described in more detail with reference to the attached drawings.

FIG. 1 is a flowchart illustrating a method for manufacturing a nickel stamp according to one embodiment of the present invention.

Referring to FIG. 1, a method for manufacturing a nickel stamp according to an embodiment of the present invention includes a step of preparing a nickel wafer (S100), a step of forming a first photoresist layer on the nickel wafer (S200), a step of forming a first plating area by removing at least a portion of the first photoresist layer (S300), a step of forming a first nickel layer in the first plating area through electroplating (S400), a step of forming a second photoresist layer on the first photoresist layer remaining on the nickel wafer and the first nickel layer (S500), a step of forming a second plating area by removing at least a portion of the second photoresist layer (S600), a step of forming a second nickel layer in the second plating area through electroplating (S700), and a step of removing the first photoresist layer and the second photoresist layer remaining using a solvent (S800).

Below, each step for manufacturing a nickel stamp is described.

Figure 2 is a flow chart illustrating a method for preparing a nickel wafer.

Referring to FIG. 2, the step of preparing a nickel wafer (S100) includes providing a nickel plate (110) (S110), processing the nickel plate (110) into a wafer shape (S120), and then performing a mirror polishing treatment (S130) on the nickel plate (110) processed into a wafer shape.

The provided nickel plate (110) may be made of high purity nickel metal or nickel alloy material. In the case of high purity nickel metal, it may have a nickel content of at least about 99.99 wt%, but is not limited thereto.

Processing a nickel plate (110) into a wafer shape (S120) may include a process of rolling the nickel plate (110) and processing it into a disk-shaped wafer. The wafer-shaped nickel plate (110) formed through the above process has a rough surface and therefore cannot be directly used in a semiconductor process.

The process of performing a mirror polishing treatment (S130) on a nickel plate (110) processed into a wafer shape may include a process of performing at least one heat treatment operation and at least one polishing operation on the processed nickel plate (110).

At least one heat treatment operation may include an annealing treatment performed at a recrystallization temperature of nickel. At least one heat treatment operation may prevent deformation (e.g., thermal deformation) due to the polishing operation, thereby removing stress remaining within the nickel plate (110). The time required for at least one heat treatment operation may be from 30 minutes to 4 hours, but is not limited thereto.

At least one polishing operation can be performed by polishing the surface of a wafer-shaped nickel plate (110) (hereinafter referred to as a “nickel wafer”) that has undergone at least one heat treatment operation using a polishing pad. In this process, various abrasives (materials such as silica sand, aluminum oxide (Al2 O3), and silicon carbide (SiC)) can be used.

A nickel wafer (110) that has been polished to a mirror surface through at least one heat treatment and at least one polishing operation can have a flatness (Total Thickness Variation) value of about 60 ㎛ to about 30 ㎛ or less, a bow height value of about 80 ㎛ to about 60 ㎛ or less, and a warp value of about 100 ㎛ to about 80 ㎛ or less. A nickel wafer (110) having a flatness value, a bow height value, and a warp value within the above ranges may not experience a flatness reduction phenomenon, a warp phenomenon, or a warp phenomenon.

In addition, the mirror-polished nickel wafer (110) may have a roughness value of about 5 nm to about 2 nm. If the roughness value of the mirror-polished nickel wafer (110) exceeds about 5 nm or is less than about 2 nm, ionized nickel may not be attached or may not be sufficiently attached to the surface of the nickel wafer (110) in the electroplating process described below, and thus the growth of the ionized nickel may be reduced.

FIG. 3 is a drawing illustrating a method for forming a first nickel layer, and FIG. 4 is a flowchart illustrating a method for forming a first plating area in a first photoresist layer.

Referring to FIGS. 1 and 3, the step (S200) of forming a first photoresist layer on a nickel wafer includes preprocessing the surface of the nickel wafer (110) and applying photoresist.

Pretreatment of the surface of a nickel wafer (110) includes a process of performing a dehydration baking treatment at 150° C. to 250° C. for 12 to 18 hours, followed by a plasma ashing treatment in oxygen at 70 W to 150 W for 15 to 30 minutes. Through the above process, any organic matter can be removed from the surface of the pretreated nickel wafer (110).

Applying the photoresist may include applying the photoresist through coating (e.g., spin coating) on the surface of the pretreated nickel wafer (110). The photoresist (PR) applied is a chemical substance whose properties change when it reacts to light (photosensitive). The photoresist may be SU-8 (a type of epoxy-based negative photoresist) with good resolution and biocompatibility, but is not limited thereto.

The thickness of the photoresist applied may be, but is not limited to, between 1 ㎛ and 200 ㎛ or between 10 ㎛ and 100 ㎛.

In the process of coating the photoresist on the surface of the nickel wafer (110), the photoresist may be formed to a thickness higher than the set thickness at the edge of the nickel wafer (110). In this case, the phenomenon of the photoresist being formed to a thickness higher than the set thickness by the operator at the edge of the nickel wafer (110) can be suppressed or alleviated by using a small amount of solvent (e.g., acetone).

A soft baking operation can be performed to remove the solvent remaining in the photoresist. The solvent remaining in the photoresist can be removed by soft baking treatment in a manner of drying at a temperature range of 50° C. to 140° C. for 5 to 20 minutes. This can prevent contamination of the first photomask (PM1) described later.

Through the above process, a first photoresist layer (120) is formed on the surface of a nickel wafer (110).

Referring to FIGS. 3 and 4, the step (S300) of forming a first plating area by removing at least a portion of a first photoresist layer includes arranging a first photomask and a light source on an upper side of the first photoresist layer (S310), irradiating light toward the first photomask to form a first exposed area and a first unexposed area in the first photoresist layer (S320), and then removing the first unexposed area using a solvent (S330).

The photomask used in the process of placing the first photomask (PM1) and the light source (L) on the upper side of the first photoresist layer (120) (S310) is a square-shaped substrate covered with a pattern of opaque, transparent, and phase-inversion regions, and can transmit light irradiated from the light source (L) so that the light can reach the first photoresist layer (120).

The material used for the photomask may include, but is not limited to, quartz, glass (sodium sodalime, glass), and film (polyster).

A light source (L) is placed above the first photomask (PM1) and irradiates light toward the first photomask (PM1).

In the process of forming a first exposure area (120a) and a first non-exposed area (120b) in the first photoresist layer (120) by irradiating light toward the first photomask (PM1) (S320), the intensity of the light irradiated through the light source (L) can be adjusted within the range of 10 mJ/cm2 to 30 mJ/cm2 per second.

The light irradiated through the light source (L) is partially blocked by the first photomask (PM1), and the unblocked portion can reach the first exposure area (120a). The first exposure area (120a) of the first photoresist layer (120) that received the light can undergo a change in the characteristic of becoming harder than the first unexposed area (120b).

Removing the first unexposed area (120b) through a solvent (S330) may include removing the first unexposed area (120b) through a developer.

The work of removing the first unexposed area (120b) through the developer may include a dip method in which a nickel wafer (110) on which a first photoresist layer (120) is formed is placed in a bath containing the developer, a spray method in which the developer is sprayed using a nozzle, and a puddle method in which the developer is supplied onto the nickel wafer (110) and surface tension is utilized. When the first unexposed area (120b) is removed through the developer, a first plating area (120c) is provided on one side and the other side of the first exposed area (120a) on which a nickel layer can be formed through electroplating.

After removing the first unexposed area (120b) using a developer, a process of washing with a solvent such as isopropyl alcohol and blowing drying with an inert gas such as nitrogen can be performed.

The step (S400) of forming a first nickel layer in the first plating area through electroplating may include performing a method of applying current to a target as an anode and a cathode in an ionic aqueous solution. At this time, the target is made of a pure metal, and the metal is plated on the surface of a nickel wafer (110) from which a first photoresist layer (120) corresponding to the first plating area (120c) has been removed.

Nickel electroplating requires a direct current path between a pair of electrodes immersed in a conductive nickel salt solution, and the current flow causes the anode to dissolve and the cathode to be coated with nickel. Nickel in the solution exists as a divalent ion (Ni2 ⁺⁾ , and when current flows, the cation reacts with two electrons to form metallic nickel on the cathode surface. On the other hand, metallic nickel at the anode dissolves to form divalent cations, which then move into the solution.

When the electroplating operation is completed in the first plating area (120c), a first nickel layer (130) is formed in the first plating area (120c). At this time, the thickness of the first nickel layer (130) may have a thickness corresponding to the thickness of the first photoresist layer (120) (more specifically, the thickness of the first exposure area (120a)). In addition, the thickness of the first nickel layer (130) may be determined depending on the temperature of the electroplating solution or the electroplating time.

When the first nickel layer (130) is formed in the first plating area (120c) according to the above process, the first nickel layer (130) has a first micropattern.

In addition, when the first nickel layer (130) is formed in the first plating area (120c), the first nickel layer (130) and the first exposed area (120a) of the first photoresist layer (120) remain on the nickel wafer (110).

FIG. 5 is a drawing illustrating a step of forming a second nickel layer, and FIG. 6 is a flowchart illustrating a method of forming a second plating area in a second photoresist layer.

Referring to FIGS. 1 and 5, the step (S500) of forming a first photoresist layer remaining on a nickel wafer and a second photoresist layer on the first nickel layer may include an operation of applying a new photoresist through coating (e.g., spin coating).

The thickness of the applied photoresist may be, but is not limited to, 1 ㎛ to 200 ㎛ or 10 ㎛ to 100 ㎛, similar to the first photoresist layer (120).

When a new photoresist is applied on the first photoresist layer (120) and the first nickel layer (130) where the new photoresist remains, a portion of the new photoresist covers the surface of the first nickel layer (130), so that dust or fine foreign substances can be temporarily blocked from entering the first nickel layer (130) during the process of forming the second nickel layer (150).

Referring to FIGS. 5 and 6, the step (S600) of forming a second plating area by removing at least a portion of a second photoresist layer includes arranging a second photomask and a light source on an upper side of the second photoresist layer (S610), irradiating light toward the second photomask to form a second exposed area and a second unexposed area in the second photoresist layer (S620), and then removing the second unexposed area using a solvent (S630).

In the process of placing a second photomask (PM2) and a light source (L) on the upper side of the second photoresist (140) layer (S610), a light source (L) is placed on the upper side of the second photomask (PM2).

A portion of the second photomask (PM2) disposed on the upper side of the second photoresist layer (140) may be disposed at a position overlapping the first nickel layer (130).

The second photomask (PM2) may have a shape corresponding to the shape of the first photomask (PM1). If the second photomask (PM2) has a shape corresponding to the shape of the first photomask (PM1), the second nickel layer (150) may be disposed on the first nickel layer (130) with the same shape as the first nickel layer (130).

In addition, the second photomask (PM2) may have a different shape from the shape of the first photomask (PM1). If the second photomask (PM2) has a different shape from the shape of the first photomask (PM1), the second nickel layer (150) may have a different shape from the first nickel layer (130) and may be disposed on the first nickel layer (130). An operator may form second nickel layers (150) of various shapes by disposing second photomasks (PM2) having various patterns.

In the process of forming a second exposure area (140a) and a second non-exposed area (140b) in the second photoresist layer (140) by irradiating light toward the second photomask (PM2) (S620), the intensity of the light irradiated through the light source (L) can be adjusted within the range of 10 mJ/cm2 to 30 mJ/cm2 per second.

As illustrated in Fig. 5, light irradiated through a light source (L) is partially blocked by the second photomask (PM2), and the remaining portion may reach the second exposure area (140a). The second exposure area (140a) of the second photoresist layer (140) that received light may undergo a change in properties such that it becomes harder than the second unexposed area (140b).

Removing the second unexposed area (140b) through a solvent (S630) may include removing the second unexposed area (140b) through a developer.

The work of removing the second unexposed area (140b) through the developer may include a dip method in which the developer is placed in a bath containing the developer, a spray method in which the developer is sprayed through a nozzle, and a puddle method using the surface tension of the developer. When the second unexposed area (140b) is removed through the developer, a second plating area (140c) is provided on one side and the other side of the second exposed area (140a) on which a nickel layer can be formed in an electroplating vessel.

After removing the second unexposed area (140b) using a developer, a process of washing with a solvent such as isopropyl alcohol and blowing drying with an inert gas such as nitrogen can be performed.

Referring to FIGS. 1 and 5, the step (S700) of forming a second nickel layer in a second plating area through electroplating may include performing a method of passing current between a target as an anode and a cathode in an ionic aqueous solution. At this time, the target is made of a pure metal, and the metal is plated on the surface of the first nickel layer (130) from which the second photoresist layer (140) corresponding to the second plating area (140c) has been removed.

Nickel electroplating requires a direct current path between a pair of electrodes immersed in a conductive nickel salt solution, and the current flow causes the anode to dissolve and the cathode to be coated with nickel. Nickel in the solution exists as a divalent ion (Ni2 ⁺⁾ , and when current flows, the cation reacts with two electrons to form metallic nickel on the cathode surface. On the other hand, metallic nickel at the anode dissolves to form divalent cations, which then move into the solution.

Nickel electroplating solution used in electroplating The nickel electroplating solution may be composed of, for example, about 350 to 550 g/l of nickel sulfamate, about 25 to 45 g/l of boric acid, and about 4 to 20 g/l of nickel chloride, but is not limited thereto.

At this time, the cathode current density may be, for example, in a range of about 0.01 to 0.2 A/cm2, specifically, in a range of about 0.015 to 0.18 A/cm2. The pH of the nickel electroplating solution may be, for example, in a range of about 3.5 to 5, specifically, in a range of about 3.8 to 4.5. In addition, the plating temperature may be between about 35 to 55°C.

Additionally, the plating time can be adjusted within a range of, for example, about 0.1 to 24 hours, about 0.3 to 5 hours, or about 0.5 to 3 hours.

As the plating time increases, a denser and stronger nickel plating layer can be formed, and the growth rate of the plating layer can be, for example, in a range of about 1 to 500 nm/min, or about 10 to 100 nm/min.

When the electroplating work is completed in the second plating area (140c), a second nickel layer (150) is formed in the second plating area (140c). At this time, the thickness of the second nickel layer (150) may have a thickness corresponding to the thickness of the second photoresist layer (140) (more specifically, the thickness of the second exposure area (140a)). In addition, the thickness of the second nickel layer (150) may be determined depending on the temperature of the electroplating solution or the electroplating time.

When the second nickel layer (150) is formed in the second plating area (140c) according to the above process, the second nickel layer (150) has a second micropattern. The second micropattern may correspond to the first micropattern according to the pattern of the second photomask (PM2), and may be different from the first micropattern.

In addition, when a second nickel layer (150) is formed in the second plating area (140c), the second nickel layer (150) and the second exposure area (140a) of the second photoresist layer (140) remain on the first nickel layer (130).

Referring to FIG. 1 and FIG. 5, the step (S800) of removing the remaining first photoresist layer and second photoresist layer using a solvent includes removing the first exposure area (120a) and the second exposure area (140a) using a solvent such as PR Remover, Si Cleaning, and acetone.

When the first exposure area (120a) is removed, only the first nickel layer (130) remains on the nickel wafer (110), and when the second exposure area (140a) is removed, only the second nickel layer (150) remains on the first nickel layer (130).

In this way, a nickel stamp (100) having a first nickel layer (130) and a second nickel layer (150) is manufactured.

When a nickel stamp (100) manufactured by the above manufacturing method is applied to a molding process, a microchannel of about 10 nm to 200 μm can be formed within the molded product according to the designed dimensions.

The Vickers hardness of the nickel stamp (100) manufactured by the above manufacturing method may be in the range of about 650 to 800 MPa, and the Brinell hardness may be in the range of about 650 to 1600 MPa.

Since the manufacturing method of the present embodiment applies a new photoresist layer (second photoresist layer (140)) while leaving the first photoresist layer (120) without removing it, the process time consumed for forming the new photoresist layer can be shortened and the process cost can be reduced compared to when the first photoresist layer (120) is removed and the new photoresist layer is formed.

In addition, since the first photoresist layer (120) and the second photoresist layer (140) are removed simultaneously, the process time consumed for removing the first photoresist layer (120) and the second photoresist layer (140) respectively through the above manufacturing method can be shortened.

In addition, since the nickel stamp (100) manufactured through the manufacturing step of the present invention can have multiple micro-patterns having different heights and various structures, the diversity of research utilizing multiple micro-patterns can be increased.

A nickel stamp (100) manufactured by the above manufacturing method includes a nickel wafer (110) formed on a nickel base and a first nickel layer (130) having a first micropattern and a second nickel layer (150) disposed on an upper side of the first nickel layer (130) and having a second micropattern. The second nickel layer (150) may be formed from the upper surface of the first nickel layer (130) and may have a thickness corresponding to the thickness of the second photoresist layer (140).

With the second micropattern positioned on the upper side of the first micropattern, the first micropattern and the second micropattern can be connected to each other. This allows the operator to conduct experiments with more complex and diverse structures.

The nickel stamp (100) manufactured by the above manufacturing method can have a form in which the first nickel layer (130) and the second nickel layer (150) are integrated while being attached to each other, since the second nickel layer (150) is formed from the upper surface of the first nickel layer (130). As a result, the stability of the nickel stamp (100) is increased, and the reliability of research or experiments can be increased.

Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be made without departing from the technical idea of the present invention. Accordingly, the embodiments disclosed in the present invention are not intended to limit the technical idea of the present invention, but to explain, and the scope of the technical idea of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are exemplary and not restrictive in all aspects. The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

100. Nickel Stamp
110. Nickel plate, nickel wafer
120. First photoresist layer
120a. First exposure area
120b. 1st non-exposed area
120c. 1st plating area
130. First nickel layer
140. Second photoresist layer
140a. Second exposure area
140b. Second non-exposed area
140c. 2nd plating area
150. Second nickel layer
L. Light source
PM1. 1st photomask
PM2. 2nd photomask

Claims (9)

delete delete delete Steps for preparing nickel wafers;
A step of forming a first photoresist layer on the nickel wafer;
A step of forming a first plating area by removing at least a portion of the first photoresist layer;
A step of forming a first nickel layer in the first plating area through electroplating;
A step of forming a first photoresist layer remaining on the nickel wafer and a second photoresist layer on the first nickel layer;
A step of forming a second plating area by removing at least a portion of the second photoresist layer;
A step of forming a second nickel layer in the second plating area through electroplating; and
A step of removing the remaining first photoresist layer and the second photoresist layer using a solvent; including;
The step of forming a first nickel layer in the first plating area through the above electroplating includes a step of forming a first micropattern within the first nickel layer during the process of forming the first nickel layer.
A method for manufacturing a nickel stamp, wherein the step of forming a second nickel layer in the second plating area through the electroplating includes a step of forming a second micropattern within the second nickel layer during the process of forming the second nickel layer, the second micropattern overlapping the first micropattern and having a different shape from the first micropattern. In paragraph 4,
The step of forming a first plating area by removing at least a portion of the first photoresist layer is:
A method for manufacturing a nickel stamp, comprising: arranging a first photomask and a light source on an upper side of the first photoresist layer, irradiating light toward the first photomask to form a first exposed area and a first unexposed area in the first photoresist layer, and removing the first unexposed area using a solvent. In paragraph 5,
The step of forming a second plating area by removing at least a portion of the second photoresist layer is:
A method for manufacturing a nickel stamp, comprising: arranging a second photomask and a light source on an upper side of the second photoresist layer, irradiating light toward the second photomask to form a second exposed area and a second unexposed area in the second photoresist layer, and removing the second unexposed area using a solvent. In Article 6,
A method for manufacturing a nickel stamp, wherein a portion of the second photomask is positioned to overlap the first nickel layer. In paragraph 4,
A method for manufacturing a nickel stamp, wherein the thickness of the first nickel layer corresponds to the thickness of the first photoresist layer. In Article 8,
A method for manufacturing a nickel stamp, wherein the thickness of the second nickel layer corresponds to the thickness of the second photoresist layer.

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