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KR102487703B1 - 감광성 수지 조성물, 경화막, 적층체, 이들의 제조 방법, 반도체 디바이스, 이들에 이용되는 열염기 발생제 - Google Patents

감광성 수지 조성물, 경화막, 적층체, 이들의 제조 방법, 반도체 디바이스, 이들에 이용되는 열염기 발생제 Download PDF

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Publication number
KR102487703B1
KR102487703B1 KR1020207027696A KR20207027696A KR102487703B1 KR 102487703 B1 KR102487703 B1 KR 102487703B1 KR 1020207027696 A KR1020207027696 A KR 1020207027696A KR 20207027696 A KR20207027696 A KR 20207027696A KR 102487703 B1 KR102487703 B1 KR 102487703B1
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South Korea
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group
photosensitive resin
resin composition
preferable
formula
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Korean (ko)
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KR20200128072A (ko
Inventor
하루나 이노우에
토시히데 아오시마
토시아키 후쿠하라
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020207027696A 2018-03-29 2019-03-26 감광성 수지 조성물, 경화막, 적층체, 이들의 제조 방법, 반도체 디바이스, 이들에 이용되는 열염기 발생제 Active KR102487703B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2018-065762 2018-03-29
JP2018065762 2018-03-29
PCT/JP2019/012740 WO2019189111A1 (ja) 2018-03-29 2019-03-26 感光性樹脂組成物、硬化膜、積層体、これらの製造方法、半導体デバイス、これらに用いられる熱塩基発生剤

Publications (2)

Publication Number Publication Date
KR20200128072A KR20200128072A (ko) 2020-11-11
KR102487703B1 true KR102487703B1 (ko) 2023-01-12

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KR1020207027696A Active KR102487703B1 (ko) 2018-03-29 2019-03-26 감광성 수지 조성물, 경화막, 적층체, 이들의 제조 방법, 반도체 디바이스, 이들에 이용되는 열염기 발생제

Country Status (5)

Country Link
JP (1) JP7083392B2 (ja)
KR (1) KR102487703B1 (ja)
CN (1) CN111919172B (ja)
TW (1) TWI808143B (ja)
WO (1) WO2019189111A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7243233B2 (ja) * 2019-01-30 2023-03-22 Ｈｄマイクロシステムズ株式会社 感光性樹脂組成物、パターン硬化物の製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜及び電子部品
JP2021117442A (ja) * 2020-01-29 2021-08-10 旭化成株式会社 感光性樹脂組成物
TWI869552B (zh) * 2020-02-28 2025-01-11 日商富士軟片股份有限公司 硬化性樹脂組成物、硬化膜、積層體、硬化膜之製造方法及半導體器件
TW202244639A (zh) * 2021-02-17 2022-11-16 日商富士軟片股份有限公司 永久膜之製造方法、積層體之製造方法及半導體裝置之製造方法

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JP2003043677A (ja) * 2001-08-01 2003-02-13 Jsr Corp 感放射線性樹脂組成物
JP2011089116A (ja) * 2009-09-25 2011-05-06 Dainippon Printing Co Ltd 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品
WO2018025738A1 (ja) * 2016-08-01 2018-02-08 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法および半導体デバイス

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JP5068629B2 (ja) 2007-10-26 2012-11-07 旭化成イーマテリアルズ株式会社 感光性樹脂組成物、感光性ドライフィルム、感光性積層フィルムおよびそれらを用いたカバーレイ
US8697332B2 (en) 2009-03-31 2014-04-15 Dai Nippon Printing Co., Ltd. Base generator, photosensitive resin composition, pattern forming material comprising the photosensitive resin composition, pattern forming method using the photosensitive resin composition and products comprising the same
JP5573578B2 (ja) * 2009-10-16 2014-08-20 信越化学工業株式会社 パターン形成方法及びレジスト材料
EP2725423B1 (en) * 2011-06-24 2021-09-01 Tokyo Ohka Kogyo Co., Ltd. Negative-type photosensitive resin composition, pattern forming method, cured film, insulating film, and color filter
JP6167089B2 (ja) 2014-03-27 2017-07-19 富士フイルム株式会社 感光性樹脂組成物、硬化膜、硬化膜の製造方法および半導体デバイス
TWI671343B (zh) * 2014-06-27 2019-09-11 日商富士軟片股份有限公司 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法以及半導體裝置
TWI644979B (zh) 2014-06-27 2018-12-21 日商富士軟片股份有限公司 熱硬化性樹脂組成物、硬化膜、硬化膜的製造方法及半導體元件
KR101985215B1 (ko) * 2015-05-29 2019-06-03 후지필름 가부시키가이샤 폴리이미드 전구체 조성물, 감광성 수지 조성물, 경화막, 경화막의 제조 방법, 반도체 디바이스 및 폴리이미드 전구체 조성물의 제조 방법
TWI728137B (zh) * 2016-06-29 2021-05-21 日商富士軟片股份有限公司 負型感光性樹脂組成物、硬化膜、硬化膜的製造方法、半導體裝置、積層體的製造方法、半導體裝置的製造方法及聚醯亞胺前驅物
JP6751159B2 (ja) * 2016-12-28 2020-09-02 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法および半導体デバイス
KR20190007387A (ko) * 2017-07-12 2019-01-22 다이요 홀딩스 가부시키가이샤 감광성 수지 조성물, 드라이 필름, 경화물, 반도체 소자, 프린트 배선판 및 전자 부품
JP2019020709A (ja) 2017-07-12 2019-02-07 太陽ホールディングス株式会社 感光性樹脂組成物、ドライフィルム、硬化物、半導体素子、プリント配線板および電子部品

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Publication number Priority date Publication date Assignee Title
JP2003043677A (ja) * 2001-08-01 2003-02-13 Jsr Corp 感放射線性樹脂組成物
JP2011089116A (ja) * 2009-09-25 2011-05-06 Dainippon Printing Co Ltd 塩基発生剤、感光性樹脂組成物、当該感光性樹脂組成物からなるパターン形成用材料、当該感光性樹脂組成物を用いたパターン形成方法並びに物品
WO2018025738A1 (ja) * 2016-08-01 2018-02-08 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法、積層体の製造方法および半導体デバイス

Also Published As

Publication number Publication date
WO2019189111A1 (ja) 2019-10-03
CN111919172A (zh) 2020-11-10
TW201942675A (zh) 2019-11-01
KR20200128072A (ko) 2020-11-11
JP7083392B2 (ja) 2022-06-10
JPWO2019189111A1 (ja) 2021-03-11
CN111919172B (zh) 2025-02-18
TWI808143B (zh) 2023-07-11

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