KR102469929B1 - Cleaning solution composition for semiconductor wafer and cleaning method using the same - Google Patents

Abstract

A semiconductor wafer cleaning liquid composition according to the present invention includes a quaternary ammonium compound; hydrophilic inclusion compounds; and a hydrophilic solvent containing water, wherein the hydrophilic inclusion compound is included in an amount of 0.01 to 5% by weight based on 100% by weight of the entire semiconductor wafer cleaning liquid composition.

Description

Semiconductor wafer cleaning composition and cleaning method using the same {CLEANING SOLUTION COMPOSITION FOR SEMICONDUCTOR WAFER AND CLEANING METHOD USING THE SAME}

The present invention relates to a semiconductor wafer cleaning liquid composition used for cleaning semiconductor wafers and a cleaning method using the same.

A wafer, which is widely used as a material for manufacturing semiconductor devices today, refers to a single-crystal silicon thin plate made of poly-crystal silicon as a raw material.

These wafers include a growth process of growing polycrystalline silicon into a single crystal silicon ingot, a slicing process of cutting the grown single crystal silicon ingot into a wafer shape, a lapping process of uniformizing and flattening the thickness of the wafer, and a mechanical It is manufactured through an etching process to remove or mitigate damage caused by polishing, a polishing process to harden the wafer surface, and a cleaning process to clean the wafer.

A wafer manufactured in this way is referred to as a polished wafer. On the other hand, an epitaxial wafer refers to a wafer in which another single crystal film (or “epitaxial layer”) is grown on the surface of a polished wafer, and has fewer surface defects than a polished wafer and can control the concentration or type of impurities. It is a wafer with possible characteristics. The epitaxial layer has high purity and excellent crystal characteristics, and thus has advantages in improving yield and device characteristics of highly integrated semiconductor devices.

During the slicing process and the polishing process of the wafer manufacturing process, since a large number of silicon particles adsorb on the wafer surface and cause contamination, the wafer surface is cleaned with a cleaning solution in the cleaning process.

It is known that an alkaline aqueous solution is effective as a cleaning liquid commonly used for removing particle contamination. Alkaline aqueous solutions, such as an aqueous ammonia solution, an aqueous potassium hydroxide solution, and an aqueous tetramethylammonium hydroxide solution, are used for cleaning the surface of semiconductor wafers. Further, cleaning (referred to as "SC-1 cleaning" or "APM cleaning") with a cleaning solution containing ammonia, hydrogen peroxide, and water (referred to as "SC-1 cleaning liquid" or "APM cleaning liquid") is also widely used. And recently, it has been proposed to add various surfactants to improve the performance of such an alkaline cleaning solution.

Among the contaminations, contamination by microparticles (particles) such as silica particles, alumina particles, or organic particles in particular reduces the yield of the device, so it is necessary to reduce it as much as possible before entering the next process. Therefore, development of a cleaning agent with excellent cleaning effect This is what is required.

Korean Patent Publication No. 1998-0038011 relates to a wafer cleaning liquid and a wafer cleaning method using the same, and discloses a wafer cleaning liquid made of a solvent containing 10 ^-3 to 10 ^-1 wt% of a nonionic surfactant, have. However, in the case of the prior literature, there is a problem that the surfactant component remains on the wafer surface after the cleaning solution treatment.

Korean Patent Publication No. 2013-0116326 relates to a chemical solution for forming a protective film, and specifically discloses a chemical solution for forming a water-repellent protective film to improve the collapse of a circuit pattern of a semiconductor device. However, in order to remove the water repellent protective film, an additional treatment process such as light irradiation on the wafer, heating or plasma irradiation is required, and the water repellent protective film is not sufficiently removed.

In addition, Korean Patent Publication No. 2015-0017153 relates to a composition for cleaning semiconductor wafers, which includes a quaternary ammonium hydroxide, a specific nonionic surfactant, and an organic acid, an inorganic acid, or a salt thereof. contents are disclosed. However, since the above document uses a nonionic surfactant, there is a problem that a surfactant component may remain on the surface after washing.

Korean Patent Publication No. 2013-0138681 relates to a cleaning solution for lithography, and discloses a cleaning solution for lithography containing an alkali or acid, a solvent, and a silicon compound generating a silanol group by hydrolysis. It is not mentioned that the cleaning solution can be used for cleaning semiconductor wafers, and there is a problem that a silicon compound containing a silanol group used to prevent corrosion of the low dielectric layer may remain on the surface.

Therefore, there is a demand for the development of a semiconductor wafer cleaning solution capable of removing surfactants or organic residues that may remain on the surface even after cleaning treatment or surface protective film formation during the semiconductor manufacturing process.

Republic of Korea Patent Publication No. 1998-0038011 (1998.08.05) Republic of Korea Patent Publication No. 2013-0116326 (2013.10.23.) Republic of Korea Patent Publication No. 2015-0017153 (2015.02.16.) Republic of Korea Patent Publication No. 2013-0138681 (2013.06.07.)

The present invention is intended to solve the above problems, and in the semiconductor manufacturing process, hydrophobic organic molecule residues remaining on the surface even after cleaning treatment or surface protective film formation are incorporated by hydrophilic clathrate compounds into a hydrophilic state that is easy to dissolve in water. It is intended to provide a semiconductor wafer cleaning liquid composition that can be easily removed and a cleaning method using the same.

The present invention is a quaternary ammonium compound; hydrophilic inclusion compounds; and a hydrophilic solvent containing water, wherein the hydrophilic inclusion compound is contained in an amount of 0.01 to 5% by weight based on 100% by weight of the entire semiconductor wafer cleaning composition.

Further, the present invention relates to a semiconductor wafer cleaning method for cleaning a semiconductor substrate with the above-described semiconductor wafer cleaning liquid composition.

The semiconductor wafer cleaning liquid composition according to the present invention has an advantage of excellent cleaning power because it includes a quaternary ammonium compound and a hydrophilic clathrate compound of a specific content.

In addition, the cleaning method of the semiconductor wafer according to the present invention has the advantage that no surfactant remains and the residue can be easily removed.

Hereinafter, the present invention will be described in more detail.

In the present invention, when a member is said to be located “on” another member, this includes not only a case where a member is in contact with another member, but also a case where another member exists between the two members.

In the present invention, when a part "includes" a certain component, it means that it may further include other components, not excluding other components unless otherwise stated.

<Semiconductor Wafer Cleaning Liquid Composition>

One aspect of the present invention is a quaternary ammonium compound; hydrophilic inclusion compounds; and a hydrophilic solvent containing water, wherein the hydrophilic inclusion compound is contained in an amount of 0.01 to 5% by weight based on 100% by weight of the entire semiconductor wafer cleaning composition.

quaternary ammonium compounds

The semiconductor wafer cleaning liquid composition of the present invention includes the quaternary ammonium compound. When the semiconductor wafer cleaning liquid composition includes the quaternary ammonium compound, there is an advantage in that particles or residues on the surface of the wafer can be removed by electrostatic repulsive force.

Specifically, the quaternary ammonium compound may include quaternary ammonium hydroxide, but is not limited thereto.

In one embodiment of the present invention, the quaternary ammonium compound is tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), tetrapropylammonium hydroxide (TPAH) and tetrabutylammonium hydroxide. It may be one or more selected from the group consisting of seed (TBAH).

In another embodiment of the present invention, the quaternary ammonium compound is 0.1 to 10% by weight, preferably 0.1 to 8% by weight, more preferably 0.1 to 4% by weight based on 100% by weight of the total cleaning composition. can be included

When the quaternary ammonium compound is included within the above range, it is preferable because detergency is excellent. When the quaternary ammonium compound is included in an amount of less than 0.1% by weight, the alkalinity of the cleaning solution is reduced, so that the ability to remove particles or residues by electrostatic repulsion may be slightly reduced. Since some damage may occur on the surface of the wafer, it is preferable to satisfy the above range.

hydrophilic clathrate

In another embodiment of the present invention, the hydrophilic inclusion compound may be at least one selected from the group consisting of cyclodextrin-based compounds and derivatives of cyclodextrin-based compounds.

The cyclodextrin refers to glucose units arranged in a toroidal ring shape. The specific coupling and structure of the glucose units makes it possible to give the cyclodextrin a rigid conical molecular structure with a specific volume of internal hollows. The "lining" of the inner cavities is formed by hydrogen atoms and glucose bridged oxygen atoms, giving the surface a highly hydrophobic surface, and these cavities are filled with all or part of organic molecules of suitable size, forming an "inclusion complex". " can be formed.

Although not wishing to be limited by theory, the semiconductor wafer cleaning liquid composition of the present invention includes the hydrophilic inclusion compound, thereby enabling the inclusion of hydrophobic organic residues in the hydrophilic inclusion compound, thereby making it in a hydrophilic state that is easy to dissolve in water. , the removal of hydrophobic organic residues is possible. In addition to this, in general, the hydrophobic group of a surfactant is difficult to be removed by water due to its low compatibility with water, but as the hydrophilic clathrate compound encloses the hydrophobic group of the surfactant in a ring and changes to a state that exhibits hydrophilicity as a whole, water This has the advantage of easy removal.

The cyclodextrin may be any known cyclodextrin, but is not limited thereto, and may be, for example, an unsubstituted cyclodextrin containing 6 to 12 glucose units.

Specifically, the cyclodextrin may be alpha-, beta-, and gamma-cyclodextrin, may be a derivative thereof, or may include a mixture thereof.

The alpha-cyclodextrin is composed of 6 glucose units arranged in a toroidal ring, beta-cyclodextrin is composed of 7 glucose units, and gamma-cyclodextrin is composed of 8 glucose units.

In the derivative of the cyclodextrin-based compound, the cyclodextrin-based compound may include one or more substituents selected from the group consisting of a hydroxypropyl group and a methyl group.

Specifically, the hydrophilic clathrate is alpha-cyclodextrin (α-cyclodextrin), beta-cyclodextrin (β-cyclodextrin), gamma-cyclodextrin (γ-cyclodextrin), hydroxypropyl-alpha-cyclodextrin (hydroxypropyl-α -cyclodextrin), hydroxypropyl-β-cyclodextrin, hydroxypropyl-γ-cyclodextrin, and methyl-β-cyclodextrin It may be one or a mixture of two or more selected from the group consisting of, but is not limited thereto.

The hydrophilic inclusion compound may be included in an amount of 0.01 to 5 wt%, preferably 0.05 to 5 wt%, and more preferably 0.05 to 3 wt%, based on 100 wt% of the total amount of the cleaning liquid composition.

When the hydrophilic inclusion compound is contained within 0.01 to 5% by weight, it is preferable in terms of cleaning power. When the hydrophilic inclusion compound is included in less than 0.01% by weight based on 100% by weight of the total cleaning liquid composition, the increase in cleaning power for the surfactant or organic residue of the cleaning composition due to the addition of the hydrophilic inclusion compound may be somewhat insufficient, , If it exceeds 5% by weight, the phenomenon of precipitation without dissolving in the cleaning solution may occur due to a decrease in solubility in water, so that the increase in the cleaning power effect may be insufficient. it is desirable

Hydrophilic solvents containing water

The semiconductor cleaning liquid composition of the present invention includes a hydrophilic solvent containing water.

The "hydrophilic solvent" may refer to a state in which water alone is included, or a state in which water and other water-soluble solvents are mixed.

Examples of the water-soluble solvent include alcohols such as methanol, ethanol, isopropanol, 1-methoxypropanol, butanol, ethylhexyl alcohol, and terpineol; γ-butyrolactone, N-methyl-2-pyrrolidone, propylene glycol methyl ether (PGME), dimethyl sulfoxide (DMSO), tetramethylene sulfone, 1,3-dimethyl-2-imidazolidinone, 1, It may be 3-diethyl-2-imidazolidinone, ethylene glycol, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, N,N-dimethylformamide or N,N-dimethylacetamide, but is not limited thereto. .

When the hydrophilic solvent includes other water-soluble solvents other than water, the amount of the water-soluble solvent is 10 to 50% by weight, preferably 10 to 30% by weight, more preferably 15 to 30% by weight, based on 100% by weight of the total amount of the hydrophilic solvent. can be included as

The hydrophilic solvent is preferably water, more preferably deionized water, distilled water or deionized distilled water, and among them, deionized distilled water is most preferable. In the case of using water alone as the hydrophilic solvent, more specifically, in the case of using only deionized distilled water as the hydrophilic solvent, there are advantages in reducing process cost, easy handling, and excellent detergency.

The water-containing hydrophilic solvent is added after appropriately selecting components such as the above-mentioned quaternary ammonium compound, hydrophilic clathrate compound, or additional additives included in the semiconductor cleaning liquid composition of the present invention as necessary, thereby improving the overall to control the composition. Therefore, the remaining amount of the entire composition is occupied by the hydrophilic solvent containing the water. Preferably, it serves to adjust the components to have the above-described content ranges.

additive

The semiconductor cleaning liquid composition of the present invention may further include additives, if necessary. Specifically, the additive is not limited to additives commonly used in the art, such as surfactants, pH adjusters, and corrosion inhibitors.

In another embodiment of the present invention, the additive may include at least one of the group consisting of a pH adjuster and a corrosion inhibitor.

(1) pH adjusting agent

The pH adjusting agent may play a role of controlling damage to the surface of a semiconductor wafer by a basic material by adjusting the overall acidity of the semiconductor cleaning liquid composition.

In addition, when the semiconductor bird semen composition includes the pH adjusting agent, it can perform a function of decomposing or dissolving impurities remaining on the surface of a semiconductor wafer as well as controlling the overall acidity of the semiconductor cleaning liquid composition, and between contaminants. It has the advantage of improving the dispersibility of contaminants by being arranged to generate an electrical repulsive force.

The pH adjusting agent may include, for example, an inorganic acid, an organic acid, a salt thereof, or a mixture thereof.

Specifically, the inorganic acid may be at least one selected from the group consisting of carbonic acid, phosphoric acid, nitric acid, sulfuric acid and hydrochloric acid, but is not limited thereto.

The organic acids include formic acid, acetic acid, propionic acid, butyric acid, palmitic acid, stearic acid, oleic acid, oxalic acid, malonic acid, succinic acid, tartaric acid, maleic acid, glycolic acid, glutaric acid, adipic acid, sulfosuccinic acid, valeric acid, aliphatic organic acids such as caproic acid, caprylic acid, capric acid, lauric acid, myristic acid, lactic acid, malic acid, citric acid, and tartaric acid; and aromatic organic acids such as benzoic acid, salicylic acid, p-toluenesulfonic acid, naphthoic acid, nicotinic acid, toluic acid, anisic acid, cuminic acid, and phthalic acid. These can be used individually or in mixture of 2 or more types.

The salt is not particularly limited, and examples thereof include potassium salt, sodium salt, ammonium salt, calcium salt and magnesium salt.

(2) Corrosion inhibitor

The semiconductor cleaning liquid composition may further include a corrosion inhibitor. The corrosion inhibitor is not limited thereto as long as it is a material commonly used in the art, but examples thereof include mono, di, or tri ammonium phosphate, catechol, mannitol, sorbitol, erythritol, xylitol, adonitol, and the like. One type alone or two or more types may be used together.

When the semiconductor cleaning liquid composition further includes the corrosion inhibitor, it is possible to impart better cleaning power and has an effect of preventing corrosion of metal.

In another embodiment of the present invention, the additive may be included in an amount of 0.01 to 5% by weight, preferably 0.01 to 3% by weight, based on 100% by weight of the total amount of the cleaning liquid composition. When the additives are included in the above range with respect to 100% by weight of the total amount of the cleaning liquid composition, there is an advantage in that the desired performance of each additive can be imparted without deteriorating the performance of the cleaning liquid composition.

The semiconductor wafer cleaning liquid of the present invention includes a quaternary ammonium compound; hydrophilic inclusion compounds; And since it contains a hydrophilic solvent containing water, it is possible to remove surfactants and hydrophobic organic molecule residues remaining on the surface even after cleaning treatment or surface protective film formation during the semiconductor manufacturing process, and thus has an advantage of having excellent cleaning power. Specifically, by including the quaternary ammonium compound, it is possible to remove particles or residues by electrostatic repulsion, and at the same time, by including a hydrophilic inclusion compound, it is possible to make it hydrophilic by enclosing a hydrophobic organic molecule and easily remove it.

<Cleaning Method of Semiconductor Wafer>

Another aspect of the present invention relates to a semiconductor wafer cleaning method for cleaning a semiconductor substrate with the semiconductor wafer cleaning liquid composition described above.

In the present invention, the cleaning method is not particularly limited as long as the wafer cleaning liquid composition can be held in the concave portion of the concavo-convex pattern of the wafer. For example, the cleaning method is a single-wafer type typified by spin cleaning in which the semiconductor wafer is held substantially horizontally and rotated while supplying the wafer cleaning liquid composition near the center of rotation to clean the wafer one by one, or a plurality of sheets in a cleaning tank. A batch method in which wafers are immersed and cleaned is exemplified.

Preferably, the cleaning method of the present invention is carried out in a method in which the cleaning composition is directly brought into contact with a wafer, such as the above-mentioned single-wafer method or batch method.

Specifically, the cleaning method is a dip type in which a cleaning composition is filled in a cleaning tank to immerse the wafer, a spin type in which the wafer is rotated at high speed while flowing the cleaning composition from a nozzle onto the wafer, and cleaning by spraying the cleaning composition on the wafer. A spray type may be used, but is not limited thereto.

As an apparatus for performing the above cleaning, there is a batch type cleaning apparatus that simultaneously cleans a plurality of wafers accommodated in a cassette, a single wafer type cleaning apparatus that cleans one wafer by mounting it on a holder, and the like.

Any of the methods described above may be used as the cleaning method, but among them, when the semiconductor wafer cleaning liquid composition is applied to a sheet type cleaning device in which shortening the cleaning time and reducing the amount of the cleaning composition are problematic, Since these problems are solved, it is preferable. In addition, since a high particle removal effect can be obtained even in a batch type cleaning apparatus, it is preferable.

The cleaning may be performed at room temperature, but may be performed by heating for the purpose of improving the cleaning effect. Specifically, the cleaning may be performed in a range of 20 to 90 °C, preferably 20 to 50 °C.

The cleaning time may be usually 30 seconds to 30 minutes, preferably 1 minute to 15 minutes in the case of batch cleaning, and usually 1 second to 5 minutes, preferably 15 seconds to 1 minute in the case of sheet cleaning. It can be. When the cleaning time is within the above range, it is preferable in terms of cleaning effect. If the cleaning time is less than the cleaning time of each cleaning method, the cleaning effect may be insufficient or slightly reduced. If the cleaning time exceeds the cleaning time of each cleaning method, not only the throughput is reduced, but also the cleaning time The enhancement of the effect suitable for the extension of the may be somewhat reduced.

Further, in the case of cleaning, it may be used in combination with a cleaning method by physical force, for example, mechanical cleaning such as scrap cleaning using a cleaning brush, or ultrasonic cleaning. Particularly, the combined use of ultrasonic irradiation or brush scraping is preferable because the removability of particle contamination can be further improved and the cleaning time can be shortened. Particularly, when the wafer is irradiated with ultrasonic waves having a frequency of 0.5 MHz or higher, particle removability is remarkably improved, which is preferable.

The semiconductor wafer cleaning method of the present invention can be applied without particular limitation as long as it is a semiconductor wafer used in the field. For example, it can be applied to elemental semiconductor wafers such as silicon and germanium, or compound semiconductor wafers such as gallium-phosphorus, gallium arsenide, and indium-phosphorus.

Hereinafter, examples will be described in detail in order to specifically describe the present specification. However, the embodiments according to the present specification may be modified in many different forms, and the scope of the present specification is not construed as being limited to the embodiments described below. The embodiments herein are provided to more completely explain the present specification to those skilled in the art. In addition, "%" and "parts" indicating content below are based on weight unless otherwise specified.

Examples and Comparative Examples

The semiconductor cleaning liquid compositions of Examples 1 to 9 and Comparative Examples 1 to 8 were prepared by mixing the components shown in Table 1 according to their contents.

quaternary ammonium compounds hydrophilic clathrate other additives deionized distilled water type weight% type weight% type weight% Example 1 TMAH One a* 0.5 - - balance Example 2 TMAH One b* 0.1 - - balance Example 3 TMAH One c* One - - balance Example 4 TEAH One b* One - - balance Example 5 TEAH 0.5 a* 0.05 - - balance Example 6 TEAH 3 b* 0.2 - - balance Example 7 TMAH 2 c* 0.3 - - balance Example 8 TMAH 4 a* 0.6 - - balance Example 9 TMAH 2 b* 3 - - balance Comparative Example 1 - - - - - - balance Comparative Example 2 TMAH 2 - - - - balance Comparative Example 3 - - b* 5 - - balance Comparative Example 4 TEAH 5 a* 0.005 - - balance Comparative Example 5 TMAH 0.5 - - d* 0.1 balance Comparative Example 6 TMAH 3 - - e* 2 balance Comparative Example 7 TMAH 2 - - f* 5 balance Comparative Example 8 TMAH 3 - - g* 3 balance

a*: alpha-cyclodextrin (product of Ingredion Co.)

b*: Beta-cyclodextrin (product of Ingredion Co.)

c*: Gamma-cyclodextrin (product of Ingredion Co.)

d* : C _n H _2n+1 -(Phenyl)-O-(EO) _x -H (n=9, x=2)

e*: Diethylene glycol monobutyl ether

f*: γ-butyrolactone

g* : citric acid

Experimental Example: Detergency evaluation

A 6-inch p-type silicon wafer was treated with a primary cleaning solution and then dried using a spin dryer. At this time, as the first cleaning solution, a cleaning solution (Han Nonghwaseong) containing a nonionic surfactant (polyoxyethylene lauryl ether) commonly used in the art was used.

In order to check whether organic residues remain on the wafer surface, a contact angle meter (model DSA 100, KRUSS) was used to measure the contact angle of the wafer surface before cleaning and after treatment with a primary cleaning solution containing a nonionic surfactant. .

Thereafter, the second cleaning solution was treated using the cleaning solution composition according to Table 1, followed by drying using a spin dryer, and finally, the wafer surface contact angle was measured. At this time, the secondary washing liquid treatment was treated by dipping for 30 seconds and 1 minute, respectively, and the results are shown in Table 2 below.

The cleaning power was shown by calculating the surface contact angle recovery rate by Equation 1 below, and the results are shown in Table 2 below.

[Equation 1]

Surface contact angle recovery rate (%) = [(contact angle after 2nd cleaning solution treatment - contact angle after 1st cleaning solution treatment) / (contact angle before wafer initial cleaning - contact angle after 1st cleaning solution treatment)] × 100 (%)

◎: Surface contact angle recovery rate 95-105%

○: Surface contact angle recovery rate less than 90 to 95%

△: Surface contact angle recovery rate less than 80 to 90%

×: Surface contact angle recovery rate less than 80%

initial contact angle Contact angle after 1st treatment Contact angle after 2nd treatment Secondary processing time contact angle
Recovery rate (%) Judgment Example 1 66.8 52.8 66.0 30 seconds 94.8 ○ 70.2 53.8 69.7 1 minute 97.0 ◎ Example 2 69.4 52.7 68.7 30 seconds 95.8 ◎ 69.1 53.5 69.3 1 minute 101.3 ◎ Example 3 70.2 58.3 70.1 30 seconds 99.2 ◎ 67.0 53.2 67.3 1 minute 102.2 ◎ Example 4 68.3 53.5 67.2 30 seconds 92.6 ◎ 67.7 52.9 68.1 1 minute 102.7 ◎ Example 5 69.2 55.6 68.7 30 seconds 96.3 ◎ 66.4 53.8 66.8 1 minute 103.2 ◎ Example 6 71.4 55.4 70.3 30 seconds 93.1 ○ 68.4 53.8 68.7 1 minute 102.1 ◎ Example 7 70.9 57.4 70.5 30 seconds 97.0 ◎ 68.1 56.2 67.8 1 minute 97.5 ◎ Example 8 66.8 57.0 66.9 30 seconds 101.0 ◎ 68.3 54.9 68.4 1 minute 100.7 ◎ Example 9 72.1 53.8 70.7 30 seconds 92.3 ○ 70.1 53.0 69.9 1 minute 98.8 ◎ Comparative Example 1 68.3 52.6 58.7 30 seconds 38.9 × 65.7 52.7 60.4 1 minute 59.2 × Comparative Example 2 70.5 58.3 64.0 30 seconds 46.7 × 67.3 56.4 65.2 1 minute 80.7 △ Comparative Example 3 66.6 53.7 62.6 30 seconds 69.0 × 71.4 54.7 66.8 1 minute 72.5 × Comparative Example 4 66.9 53.8 60.6 30 seconds 51.9 × 68.5 54.6 64.7 1 minute 72.7 × Comparative Example 5 71.1 55.8 60.9 30 seconds 33.3 × 68.4 56.1 63.0 1 minute 56.1 × Comparative Example 6 69.0 55.7 63.4 30 seconds 57.9 × 66.9 53.7 64.3 1 minute 80.3 △ Comparative Example 7 65.8 53.2 62.0 30 seconds 69.8 × 70.8 55.9 68.5 1 minute 84.6 △ Comparative Example 8 71.8 57.2 66.5 30 seconds 63.7 × 69.3 57.0 67.0 1 minute 81.3 △

Referring to Table 2, it can be confirmed that the compositions for cleaning semiconductor wafers of Examples 1 to 9 exhibit excellent cleaning power, as all of the contact angle recovery rates are excellent.

On the other hand, in the case of the deionized distilled water or the semiconductor wafer cleaning compositions of Comparative Examples 1 to 8, the contact angle recovery rate was very low due to the residue on the wafer surface, and it could be seen that the cleaning power was poor.

Claims (7)

quaternary ammonium compounds;
hydrophilic inclusion compounds; and
Including a hydrophilic solvent containing water,
It does not contain amide oxime-based compounds and hydroxylamine-based compounds,
The quaternary ammonium compound is included in an amount of 0.1 to 10% by weight based on 100% by weight of the total cleaning liquid composition,
The hydrophilic inclusion compound is contained in 0.01 to 5% by weight based on 100% by weight of the entire semiconductor wafer cleaning liquid composition. According to claim 1,
The quaternary ammonium compound is at least one selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide and tetrabutylammonium hydroxide. According to claim 1,
Wherein the hydrophilic inclusion compound is at least one selected from the group consisting of cyclodextrin-based compounds and derivatives of cyclodextrin-based compounds. delete According to claim 1,
The semiconductor wafer cleaning liquid composition further comprises at least one additive selected from the group consisting of a pH adjuster and a corrosion inhibitor. According to claim 5,
The additive is a semiconductor wafer cleaning liquid composition that is contained in 0.01 to 5% by weight based on 100% by weight of the total cleaning liquid composition. A method of cleaning a semiconductor wafer comprising cleaning a semiconductor substrate with the semiconductor wafer cleaning liquid composition according to any one of claims 1 to 3, 5 and 6.