KR102279520B1 - Light emitting device and method of fabricating the same - Google Patents

Abstract

A light emitting device and a method for manufacturing the same are disclosed. The light emitting device includes a light emitting structure including a first surface and a second surface, a first contact electrode and a second contact positioned on the first surface of the light emitting structure and in ohmic contact with the first and second conductivity-type semiconductor layers, respectively. The electrode, the first electrode and the second electrode positioned on the first surface of the light emitting structure and electrically connected to the first contact electrode and the second contact electrode, respectively, and side surfaces of the first and second electrodes and the first of the light emitting structure an insulating portion covering a surface, each of the first and second electrodes including metal particles, and a half value of the shortest distance between the first electrode and the second electrode is one side of one of the first electrode and the second electrode less than the shortest distance from to the outer side of the insulation.

Description

Light emitting device and its manufacturing method

The present invention relates to a light emitting device and a method for manufacturing the same, and more particularly, to a light emitting device including an electrode capable of improving thermal and electrical properties of the light emitting device and a method for manufacturing the same.

Recently, as the demand for a small high-power light emitting device increases, the demand for a large-area flip-chip type light emitting device having excellent heat dissipation efficiency is increasing. The electrode of the flip chip light emitting device is directly bonded to the secondary substrate, and since a wire for supplying external power to the flip chip light emitting device is not used, heat dissipation efficiency is very high compared to that of the horizontal light emitting device. Therefore, even when a high-density current is applied, heat can be effectively conducted to the secondary substrate side, and thus the flip-chip type light emitting device is suitable as a high output light emitting source.

In addition, in order to reduce the size of the light emitting device, a process of packaging the light emitting device in a separate housing is omitted, and the demand for a chip scale package using the light emitting device itself as a package is increasing. Since the electrode of the flip-chip type light emitting device can function similarly to the lead of the package, the flip chip type light emitting device can be usefully applied also in such a chip scale package.

In order for the flip-chip light emitting device to be applied to a chip scale package, it is required that the n-type electrode and the p-type electrode have a thickness of several tens to several hundred μm. When a deposition method such as electron beam deposition is used, the growth rate of the metal is very slow, so that the productivity of the light emitting device is greatly reduced. Therefore, in order to realize the electrode having the above-described thickness, the n-type electrode and the p-type electrode are formed using a plating method.

However, when an electrode is formed using a plating method, stress is applied to the semiconductor layer by metal during the plating process, and deformation, cracks, or damage such as bowing may occur in the semiconductor layer. In addition, in order to use the plating method, a separate seed layer must be formed first before forming the electrode. Therefore, the electrode forming method using the plating method is complicated and the productivity of the light emitting device is reduced.

Further, in order to apply the flip-chip type light emitting device to the chip scale package key, an insulator covering the side surfaces of the n-type and p-type electrodes is formed. Due to the interface angle between the electrode and the insulator formed by using the plating method, there is a problem that a gap occurs between them. Due to the separation, defects of the light emitting device may occur, thereby reducing reliability of the light emitting device.

The problem to be solved by the present invention is to provide a light emitting device having excellent reliability and excellent electrical properties, and a method for manufacturing the same.

A light emitting device according to an aspect of the present invention includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer positioned between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, a light emitting structure including a first surface and a second surface positioned opposite to the first surface; a first contact electrode and a second contact electrode positioned on the first surface of the light emitting structure and in ohmic contact with the first and second conductivity-type semiconductor layers, respectively; first and second electrodes positioned on the first surface of the light emitting structure and electrically connected to the first and second contact electrodes, respectively; and an insulating part covering side surfaces of the first and second electrodes and a first surface of the light emitting structure, wherein each of the first and second electrodes includes metal particles, and a gap between the first electrode and the second electrode A half value of the shortest distance is smaller than the shortest distance from one side of one of the first electrode and the second electrode to the outer side of the insulating part.

Accordingly, a light emitting device having a low forward voltage and excellent heat dissipation efficiency and mechanical stability is provided.

The shortest distance between the first electrode and the second electrode may be 10 μm to 80 μm.

Furthermore, each of the first electrode and the second electrode may include an inclined side surface in which a tangential slope of the vertical cross-section with respect to the side surface changes.

An angle between the side surfaces of the first and second electrodes and the upper surface of the light emitting structure may be 30° or more and less than 90°.

Also, in some embodiments, a side surface of each of the first electrode and the second electrode may be perpendicular to the first surface of the light emitting structure.

The light emitting device may further include a first pad electrode and a second pad electrode positioned on one surface of the insulating part and positioned on the first and second electrodes, respectively.

Each of the first and second electrodes may include the metal particles and a non-metallic material interposed between the metal particles.

In addition, each of the first and second electrodes may include 80 to 98 wt% of metal particles.

The metal particles may include at least one of Cu, Au, Ag, and Pt.

In addition, the light emitting device may include: a region in which the active layer and the second conductivity type semiconductor layer are partially removed to partially expose the first conductivity type semiconductor layer; a first insulating layer insulating the first and second contact electrodes from each other; and a second insulating layer partially covering the first and second contact electrodes and including first and second openings exposing the first and second contact electrodes, respectively, wherein The first contact electrode may be in ohmic contact with the first conductivity type semiconductor layer through a region where the first conductivity type semiconductor layer is exposed, and the first electrode and the second electrode may form the first and second openings, respectively. It may directly contact the first and second contact electrodes through the

The first electrode and the second electrode may directly contact the first and second contact electrodes, respectively.

In a light emitting device manufacturing method according to another aspect of the present invention, a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer located between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer are provided. preparing a wafer including a light emitting structure including a light emitting structure and at least one device region including a first contact electrode and a second contact electrode respectively in ohmic contact with the first and second conductivity-type semiconductor layers; and forming first and second electrodes electrically connected to the first and second contact electrodes, respectively, on the wafer, and forming an insulating part covering side surfaces of the first and second electrodes. and each of the first and second electrodes includes metal particles, and a half value of the shortest distance between the first electrode and the second electrode positioned in the device region is one of the first electrode and the second electrode. is smaller than the shortest distance from one side of the to the side of the portion defining the device region.

In addition, the shortest distance between the first electrode and the second electrode positioned in the device region may be 10 to 80㎛.

Forming the first electrode, the second electrode, and the insulating portion may include forming a plurality of insulating portions spaced apart from each other on the wafer; forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the insulating portions; The method may include sintering the preliminary first and second electrodes to form the first and second electrodes, respectively.

In other embodiments, forming the first electrode, the second electrode, and the insulating portion may include forming a plurality of masks spaced apart from each other on the wafer; forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the masks; forming the first and second electrodes by sintering the preliminary first and second electrodes, respectively; removing the masks; The method may include forming an insulating portion filling the spaced region between the first electrode and the second electrode.

Each of the first and second electrodes formed by sintering may have a smaller volume than that of the preliminary first and second preliminary electrodes, and each of the first and second electrodes includes an inclined side surface, and the first and second electrodes A horizontal cross-sectional area of each of the second electrodes may decrease in a direction away from the light emitting structure.

In some embodiments, the forming of the first electrode, the second electrode, and the insulating part may include a spaced region between the first electrode and the insulating part formed by sintering the preliminary first and second preliminary electrodes and the second electrode. The method may further include additionally forming an insulating part that fills the spaced region between the electrode and the insulating part.

An area in which each of the preliminary first electrode and the second preliminary electrode contacts the wafer may be the same as an area in which each of the first electrode and the second electrode contacts the wafer.

In some embodiments, forming the first electrode, the second electrode, and the insulating portion may include forming a plurality of insulating portions spaced apart from each other on the wafer; forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the insulating parts and covering up to upper surfaces of the insulating parts; sintering the preliminary first and preliminary second electrodes; The method may include partially removing upper portions of the sintered preliminary first and second preliminary electrodes to expose top surfaces of the insulating portions, and to form the first and second electrodes as the first electrode and the second electrode.

In other embodiments, forming the first electrode, the second electrode, and the insulating portion may include forming a plurality of masks spaced apart from each other on the wafer; forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the masks and covering up to upper surfaces of the masks; sintering the preliminary first and preliminary second electrodes; partially removing upper portions of the sintered preliminary first and second electrodes to expose top surfaces of the masks and to form the first and second electrodes; removing the masks; and forming an insulating part filling the spaced region between the first electrode and the second electrode.

Furthermore, side surfaces of the first electrode and the second electrode may be perpendicular to the upper surface of the wafer.

The method of manufacturing the light emitting device may further include forming a first pad electrode and a second pad electrode on the first electrode and the second electrode, respectively.

The wafer may include a plurality of device regions, and the first and second electrodes may be formed on each of the plurality of device regions.

The method of manufacturing the light emitting device may further include forming a plurality of light emitting devices by dividing a portion of the wafer and the insulating portion into the plurality of device regions.

According to the present invention, by providing a light emitting device having an electrode including metal particles, it is possible to improve the mechanical stability of the electrode and the reliability of the semiconductor layers, thereby improving the reliability of the light emitting device. In addition, by providing a method of forming an electrode through a sintering method, it is possible to provide a method of manufacturing a light emitting device that is stable and can simplify the process. In addition, in the manufacturing process, by using the mask or the insulating part as a kind of frame for forming the electrode, the shortest distance between the electrodes can be reduced, thereby improving the electrical and thermal properties of the light emitting device.

1 to 3B are cross-sectional views for explaining a method of manufacturing a light emitting device according to embodiments of the present invention.
4 to 6B are cross-sectional views for explaining a method of manufacturing a light emitting device according to other embodiments of the present invention.
7 is a cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.
8 is a cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.
9 and 10 are plan views and cross-sectional views illustrating a light emitting device according to another embodiment of the present invention.
11 is a cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.
12 is a cross-sectional view for explaining a light emitting device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments introduced below are provided as examples so that the spirit of the present invention can be sufficiently conveyed to those skilled in the art to which the present invention pertains. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. In addition, when one component is described as being “on” or “on” another component, each component is different from each component, as well as when each component is “immediately above” or “directly on” the other component. It includes the case where another component is interposed between them. Like reference numerals refer to like elements throughout.

1 to 3B are cross-sectional views for explaining a method of manufacturing a light emitting device according to embodiments of the present invention. In the drawings of the present embodiments, the light emitting device of FIG. 3A may be provided according to the manufacturing method of FIGS. 1 and 2A , and the light emitting device of FIG. 3B may be provided according to the manufacturing method of FIGS. 1 and 2B . .

First, referring to FIG. 1 , at least one insulating part 170 is formed on the wafer 100 .

Specifically, referring to FIG. 1A , a mask 210 including at least one opening 211 is formed on the wafer 100 .

The wafer 100 may include a growth substrate and semiconductor layers grown and formed on the growth substrate. In particular, the wafer 100 may include a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, and the light emitting structure may be positioned on a growth substrate. That is, the wafer 100 may include a structure in which a light emitting structure is formed on a large-area growth substrate in order to manufacture a light emitting device. Therefore, the growth substrate is not limited as long as it is a substrate capable of growing a light emitting structure. For example, the growth substrate may be a sapphire substrate, a silicon carbide substrate, a silicon substrate, a gallium nitride substrate, an aluminum nitride substrate, or the like.

The wafer 100 may include one or more device regions DR, and each device region DR may include a first contact electrode and a second contact electrode. In this case, the first contact electrode and the second contact electrode may be electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively. Accordingly, at least one light emitting device may be provided from the wafer 100 , and when the wafer 100 includes a plurality of device regions DR, a plurality of light emitting devices may be provided through a process of dividing them into individual devices. there is. In this regard, it will be described later in detail.

The mask 210 is formed on the growth substrate and may have at least one opening 211 . The upper surface of the wafer 100 is partially exposed through the opening 211 .

The mask 210 is not limited as long as it is a material capable of partially exposing the wafer 100 by defining the opening 211 , and may include, for example, photoresist. When the mask 210 includes a photoresist, the mask 210 may be formed by coating the photoresist on the wafer 100 and then patterning the photoresist to form the opening 211 .

Meanwhile, the opening 211 of the mask 210 may correspond to a region in which the insulating part 170 is formed in a process to be described later. Accordingly, the widths D1 and D2 of the opening 211 may correspond to the width of the insulating portion 170 , and the widths D1 and D2 of the opening 211 may vary according to the width of the insulating portion 170 to be formed. can be decided.

The opening 211 may be formed to have at least two different widths. Some of the openings 211 may be positioned on one device region DR, and the remaining openings 211 may be formed across adjacent device regions DR. In this case, the width of the opening 211 positioned on one device region DR may be different from the width of the opening 211 formed across the device regions DR adjacent to each other.

For example, the width of the opening 211 positioned on one device region DR is defined as D1, and the width of the opening 211 positioned on the device regions DR adjacent to each other is defined as D2. Defined. In this case, D1 and D2 may be different from each other, and D2 may be greater than D1, and further, a half value of D2 may be greater than a half value of D1. In an individual device division process to be described later, the insulating portion 170 formed in the region corresponding to the opening 211 having a width of D2 is separated along the device division line L. As shown in FIG. In this case, for each individual device, the insulating portion 170 having a width corresponding to a half value of D2 may be formed along the outer side surface of the light emitting device.

Also, in the present exemplary embodiment, the width D1 of the opening 211 positioned on one device region DR may be 100 μm or less, and in particular, may be in the range of about 10 to 80 μm.

Next, referring to FIG. 1B , an insulating portion 170 filling at least a portion of the opening 211 of the mask 210 is formed.

The insulating part 170 may include a material having electrical insulating properties. For example, a material such as an EMC (Epoxy Molding Compound) or Si resin may be coated on the wafer 100 to cover the mask 210 , and then cured to form the insulating part 170 . When the cured insulating part 170 is formed to be higher than the height of the mask 210 so that the mask 210 is completely covered, the upper part of the cured insulating part 170 is removed to form the insulating part as shown in the figure. (170) can be formed. However, the present invention is not limited thereto, and the insulating portion 170 may be formed using a deposition and patterning process.

In addition, the insulating portion 170 may include light reflective and light scattering particles such as _{TiO 2 particles.} Since the insulating part 170 has reflectivity, light emitted from the light emitting structure may be reflected upward, and the light efficiency of the light emitting device may be improved.

The insulating portion 170 formed to fill at least a portion of the opening 211 may have a width corresponding to the width D of the opening 211 . Accordingly, the insulating portion 170 may have a width of about 10 to 80 μm. In addition, the insulating portion 170 may have a height corresponding to the height of the mask 210 , for example, may have a thickness of about 50 to 80 μm or more.

Meanwhile, before forming the insulating part 170 , the insulating part 170 may be formed after performing an isolation process of dividing the light emitting structures of each device region DR of the wafer 100 into device units. . Although not shown, in this case, the light emitting structure on the growth substrate may be divided into device units to form a groove between the light emitting structures of each device unit. The insulating part 170 may be formed to further fill the groove, and the insulating part 170 may be formed to cover at least some side surfaces of the light emitting structure. Accordingly, in the manufactured light emitting device, the insulating portion 170 may be formed to further cover the side surface of the light emitting structure.

Next, referring to FIG. 1C , the insulating portions 170 spaced apart from each other are formed on the wafer 100 by removing the mask 210 . Accordingly, the upper surface of the wafer 100 is exposed between the insulating portions 170 .

The mask 210 may be removed through various well-known methods, such as an etching process. When the mask 210 includes a photoresist, the mask 210 may be removed using a chemical solution to which the photoresist reacts.

Accordingly, the wafer 100 on which the insulating portions 170 spaced apart from each other are formed is provided.

Next, referring to FIGS. 2A and 2B , electrodes 160 or 260 are formed on the wafer 100 , and the wafer 100 is divided into individual device units. 2A and 2B are views for explaining a method of manufacturing a light emitting device according to different embodiments, the light emitting device of FIG. 3A may be provided according to the method of FIG. 2A, and the light emitting device of FIG. 3B according to the method of FIG. 2B A device may be provided.

First, a method of manufacturing a light emitting device according to an embodiment of the present invention will be described with reference to FIGS. 2A and 3A .

Referring to (a) of FIG. 2A , a preliminary electrode 160a is formed on the wafer 100 .

The preliminary electrode 160a may include metal particles and a viscous material including a non-metallic material interposed between the metal particles. In this case, the viscous material may be formed on the wafer 100 to cover the upper surface of the wafer 100 exposed between the insulating portions 170 . Accordingly, at least two preliminary electrodes 160a spaced apart from each other with the insulating part 170 interposed therebetween may be formed.

The metal particles included in the viscous material are not limited as long as they are materials having thermal conductivity and electrical conductivity, and may include, for example, at least one of Cu, Au, Ag, and Pt. In particular, in this embodiment, the metal particles may include Ag particles. The non-metallic material may be, for example, a polymeric material comprising C.

The viscous material may be applied on the wafer 100 using, for example, the dispenser 220 . However, the present invention is not limited thereto, and the preliminary electrode 160a may be formed on the wafer 100 using a method such as screen printing. A top surface of the preliminary electrode 160a may be formed to be substantially parallel to the top surface of the insulating part 170 , and accordingly, the insulating part 170 may be at least partially exposed between the preliminary electrodes 160a.

Next, referring to (b) of FIG. 2A , the electrode 160 is formed from the preliminary electrode 160a.

The electrode 160 may be formed by sintering the preliminary electrode 160a. For example, the electrode 160 may be formed by heating the preliminary electrode 160a to a temperature of about 300° C. or less. During the sintering process, the metal particles of the preliminary electrode 160a may be deformed into a sintered form. In this case, some non-metallic materials may be interposed between the metal particles and included in the electrode 160 . In the electrode 160 , metal particles may be sintered to form a plurality of grains disposed therein, and a non-metallic material may be interposed in at least some regions between the metal particles. Such a non-metallic material may serve as a buffer for alleviating stress that may occur in the electrode 160 . Accordingly, mechanical stability of the electrode 160 may be improved, and stress that may be applied to the wafer 100 from the electrode 160 may be reduced.

The metal particles of the electrode 160 may be included in a ratio of 80 to 98 wt% based on the total mass of the electrode 160 . Since the electrode 160 includes the metal particles in the above-mentioned ratio, it can have excellent thermal conductivity and electrical conductivity, and effectively buffer stress that may occur in the electrode 160 , thereby improving the mechanical stability of the electrode 160 . there is.

Meanwhile, the electrode 160 may have a smaller volume than the preliminary electrode 160a. During the sintering process, the volume of the preliminary electrode 160a is reduced due to solidification and/or evaporation of the non-metallic material included in the preliminary electrode 160a, so that the volume of the electrode 160 is smaller than the volume of the preliminary electrode 160a. can In addition, during the sintering process, the preliminary electrode 160a and the wafer 100 are adhered to the portion where the preliminary electrode 160a and the wafer 100 are in contact, so that even during the sintering process, the preliminary electrode 160a is almost intact. state can be maintained. Accordingly, a volume reduction may occur in the portion of the preliminary electrode 160a positioned above the interface between the preliminary electrode 160a and the wafer 100 , and as shown, the side surface 160s of the electrode 160 is can be inclined In particular, the angle formed between the side surface 160s of the electrode 160 and the wafer 100 may have an angle of less than 90°, for example, an angle of 30° or more and less than 90°. In addition, in this case, the electrode 160 may include a side surface 160s in which the slope of the tangent to the side surface of the vertical cross-section changes. Due to the nature of the sintering process, the slope of the tangent line with respect to the side surface of the vertical cross section of each of the electrodes 160 increases in the direction from the bottom to the top, and then passes a predetermined inflection point and decreases again.

When the electrode 160 is formed through the sintering process, since the volume thereof is reduced compared to the preliminary electrode 160a, a spaced region may be formed between the electrode 160 and the insulating part 170 .

According to the present embodiment, the spaced area between the insulating portions 170 having a predetermined width is filled with the preliminary electrode 160a, and the electrode 160 is formed from the preliminary electrode 160a, so that a space between the electrodes 160 is formed. The interval may be freely determined according to the width of the insulating part 170 . Therefore, for a single light emitting device, the distance between the electrodes 160 can be easily formed to be 100 μm or less, and further, 10 to 80 μm can be formed. Therefore, the interval between the first electrode 161 and the second electrode 163 of the light emitting device 200a manufactured according to the present embodiment may be 10 to 80 μm. Accordingly, it is possible to prevent an increase in the forward voltage (Vf) of the light emitting device 200a due to the distance between the electrodes, and also, the horizontal cross-sectional area of the electrodes can be increased by reducing the distance between the electrodes, so that the light emitting device ( 200a), the heat dissipation efficiency can be improved.

Next, referring to (c) of FIG. 2A , an insulating part 170 is further formed to fill the spaced region between the electrode 160 and the insulating part 170 .

Accordingly, the insulating part 170 may include a primary insulating part 171 formed primarily and a secondary insulating part 173 formed secondary. The primary insulating part 171 and the secondary insulating part 173 may be formed of the same material, but may include different materials. The secondary insulating part 173 may include an epoxy molding compound (EMC), a Si resin, or the like. The secondary insulating part 173 is formed to cover the electrode 160 and the primary insulating part 171 using a method such as coating, and then a part of the upper part is removed to expose the upper surface of the electrode 160 . can be formed in this way. However, the present invention is not limited thereto.

By forming the secondary insulating part 173 , the insulating part 170 covering the upper surface of the wafer 100 and the side surface of the electrode 160 may be formed.

Mechanical stability at the interface between the electrode 160 and the insulating part 170 covering the side surface of the electrode 160, including the inclined side where the slope of the tangent line to the side surface of the electrode 160 changes can be improved

Then, referring to FIG. 2A (d) , pad electrodes 180 positioned on the electrodes 160 may be formed.

The pad electrodes 180 may be positioned on each of the electrodes 160 and may be formed to be spaced apart from each other. The pad electrodes 180 may include, for example, a metal such as Ni, Pt, Pd, Rh, W, Ti, Al, Ag, Sn, Cu, Ag, Bi, In, Zn, Sb, Mg, or Pb. The material may be formed using a process such as deposition or plating. In addition, each of the pad electrodes 180 may be formed of a single layer or a multilayer.

The pad electrodes 180 may be formed to have a larger area than the top surface area of each of the electrodes 160 . Accordingly, a portion of the pad electrode 180 may contact the insulating portion 170 . Also, the pad electrode 180 may be electrically connected to the electrodes 160 .

By forming the pad electrode 180 , when the light emitting device manufactured according to the present embodiment is applied to a module or the like, it can be more stably mounted on a separate additional substrate or the like. For example, when the electrode 160 includes a sintered body of Cu or Ag particles, the electrode 160 has poor wettability with respect to solder or the like. By forming the pad electrode 180 on the insulating part 170 , the light emitting device may be stably mounted.

Next, referring to FIG. 2A (e), the wafer 100 is divided along the device division line L to form at least one light emitting device 200a as shown in FIG. 3A .

The device division line L corresponds to a portion between the device regions DR of the wafer 100 , and dividing the wafer 100 into a plurality of individual devices uses physical methods such as etching, scribing, and breaking. may include using Some insulating portions 170 are positioned on the device division line L, and may be diced together with the wafer 100 in the process of dividing the wafer 100 .

According to the present exemplary embodiment, the width of the insulating portion 170 formed over the adjacent device regions DR may be freely determined. Accordingly, the width of the insulating portion 170 formed over the adjacent device regions DR can be sufficiently increased, thereby preventing damage to the electrode 160 by a laser or a dicing tool in the process of dividing individual devices.

That is, by freely determining the width of the insulating portions 170 formed between the electrodes 160 , the width (corresponding to D1 ) between the electrodes 160 positioned on one device region DR is relatively small. may be formed, and the width (corresponding to D2) between the electrodes 160 positioned across the adjacent device regions DR may be formed to be relatively large. Accordingly, the heat dissipation efficiency of the manufactured light emitting device can be improved, the forward voltage can be prevented from increasing, and the light emitting device can be effectively prevented from being damaged in the individual device division process.

Meanwhile, in the present embodiment, the method of manufacturing the light emitting device may further include separating the growth substrate of the wafer 100 from the light emitting structure before dividing the wafer 100 into individual device units. The growth substrate may be separated and removed from the light emitting structure using methods such as laser lift-off, chemical lift-off, stress lift-off, thermal lift-off, and lapping. In addition, an additional surface treatment process may be further performed on one surface of the light emitting structure from which the growth substrate is separated and exposed. Through this surface treatment process, the roughness of one surface of the light emitting structure may be increased, and light extraction efficiency of light emitted through the one surface of the light emitting structure having the increased roughness may be improved.

In addition, in this embodiment, before and/or after dividing the wafer 100 into individual device units, a wavelength converter including a phosphor may be further formed on the lower surface of the wafer 100 .

Referring to FIG. 3A , the light emitting device 200a according to the present embodiment will be described in detail.

The light emitting device 200a may include a light emitting part 100L and an electrode 160 , and further include an insulating part 170 , and first and second pad electrodes 181 and 183 .

The light emitting unit 100L may include a light emitting structure including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, and an active layer positioned between the first and second conductivity type semiconductor layers, It may include a first contact electrode and a second contact electrode in ohmic contact with each of the first and second conductivity-type semiconductor layers. According to the above-described manufacturing method, the light emitting unit 100L may be provided separately from the wafer 100 .

The structure of the light emitting unit 100L and the light emitting structure may include a structure in which the first electrode 161 and the second electrode 163 may be positioned on one surface of the light emitting unit 100L (the upper surface of the light emitting unit in the drawing). may be in the form In this regard, it will be described later in detail.

The electrode 160 may be positioned on the light emitting part 100L and may include a first electrode 161 and a second electrode 163 . In this case, the first electrode 161 and the second electrode 163 may be electrically connected to the first and second contact electrodes, respectively, and the first and second electrodes 161 and 163 may be in direct contact with the light emitting structure. can

Each of the first electrode 161 and the second electrode 163 may include an inclined side surface. The angle θ between the side surfaces of the electrodes 160 and the upper surface of the light emitting part 100L may be less than 90°, for example, the angle θ may be 30°≤θ<90°.

Also, as illustrated, each of the first electrode 161 and the second electrode 163 may include an inclined side surface in which the slope of the tangent line to the side surface of the vertical cross-section changes. Furthermore, the slope of the tangent to the side surface of each of the first electrode 161 and the second electrode 163 may increase in a direction from the bottom to the top, then pass a predetermined inflection point and decrease again.

The first and second electrodes 161 and 163 and the insulating portion 170 include inclined side surfaces of the first and second electrodes 161 and 163 in which the slope of the tangent to the side of the vertical cross-section changes. ), the mechanical stability at the interface can be improved.

The first electrode 161 and the second electrode 163 may include metal particles, and further, may include a non-metallic material interposed between the metal particles. In addition, the metal particles and the non-metallic material may be formed in a sintered form. The metal particles may be included in a ratio of 80 to 98 wt% based on the mass of each of the first and second electrodes 161 and 163 . The metal particles are not limited as long as they are materials having thermal conductivity and electrical conductivity, and may include, for example, Cu, Au, Ag, Pt, and the like. The non-metallic material may be derived from a material to be sintered for forming the electrode 160 , and may be, for example, a polymer material containing C.

A half value of the shortest distance of the distance 160D1 between the first electrode 161 and the second electrode 163 is the value of the insulating portion 170 from one side of the first electrode 161 and the second electrode 163 . It may be smaller than the shortest distance 160D2 to the outer side, and further, the shortest distance 160D1 between the first electrode 161 and the second electrode 163 is the first electrode 161 and the second electrode 163 . It may be smaller than the shortest distance 160D2 from one side of one side to the outer side of the insulating part 170 . That is, the electrodes 160 may be formed to be relatively focused on the center of the light emitting device 200a. In the light emitting part 100L, an insulating layer or a contact electrode may be positioned on a side surface of the light emitting part 100L, and the light emitting region (active layer) may be mainly focused on the center of the light emitting part 100L. Most of the heat generated when the light emitting device 200a emits light may originate from the light emitting region. According to the present embodiment, since the electrode 160 is relatively focused on the center of the light emitting device 200a, heat generated when the light emitting device 200a is driven can be more effectively radiated through the electrode 160 .

In addition, the shortest distance of the distance 160D1 between the first electrode 161 and the second electrode 163 may be 100 μm or less, and further, may be in the range of 10 to 80 μm. According to an embodiment of the present invention, the shortest distance of the interval 160D1 may be provided in the above-described range. Accordingly, it is possible to prevent an increase in the forward voltage Vf of the light emitting device 200a due to the distance 160D1 between the electrodes 160 being farther away. Also, by reducing the distance 160D1 between the electrodes, the horizontality of the electrodes Since the cross-sectional area may be increased, the heat dissipation efficiency of the light emitting device 200a may be improved.

In addition, the first electrode 161 and the second electrode 163 may have a thickness of about 50 to 80 μm. Since the light emitting device according to the present embodiment includes the electrode 160 having a thickness in the above-described range, the light emitting device itself may be used as a chip scale package. Furthermore, even when the electrode 160 includes metal particles and the electrode 160 is formed to have a thickness within the above-described range, stress generated may be sufficiently alleviated. Accordingly, the stress applied to the light emitting unit 100L may be reduced, and thus the mechanical stability and reliability of the light emitting device may be improved. However, the thickness of the electrode 160 is not limited to the above-described range.

The first electrode 161 and the second electrode 163 may be formed to directly contact the first and second contact electrodes, respectively, so that a seed layer or solder required when using a plating method is required. A separate additional configuration such as a wetting layer may be omitted.

The insulating part 170 may be formed on the light emitting part 100L to cover the side surface of the electrode 160 . The first electrode 161 and the second electrode 163 may be exposed on the upper surface of the insulating part 170 . The insulating part 170 has electrical insulation and covers the side surfaces of the first electrode 161 and the second electrode 163 to effectively insulate them from each other. At the same time, the insulating part 170 may serve to support the first electrode 161 and the second electrode 163 . A lower surface of the insulating part 170 may be formed in parallel to substantially the same height as lower surfaces of the first electrode 161 and the second electrode 163 .

The insulating part 170 may include an insulating polymer and/or an insulating ceramic, for example, a material such as EMC (Epoxy Molding Compound) or a Si resin. In addition, the insulating portion 170 may include light reflective and light scattering particles such as _{TiO 2 particles.} Since the insulating part 170 has reflectivity, the light emitted from the light emitting part 100L is reflected upwardly, so that the light efficiency of the light emitting device may be improved.

In addition, unlike the illustration, the insulating part 170 may further cover the side surface of the light emitting part 100L, and the light emission angle of the light emitted from the light emitting part 100L may vary. For example, when the insulating part 170 further covers the side surface of the light emitting part 100L, some of the light emitted to the side surface of the light emitting part 100L may be reflected upward. In this way, by adjusting the region in which the insulating part 170 is disposed, the light emission angle of the light emitting device 200a can be adjusted.

The first pad electrode 181 and the second pad electrode 183 may be positioned on the insulating part 170 . In particular, as illustrated, each of the first pad electrode 181 and the second pad electrode 183 may be formed to contact each of the first and second electrodes 161 and 163 on the upper surface of the insulating part 170 . there is. Accordingly, the first and second pad electrodes 181 and 183 are electrically connected to the first and second electrodes 161 and 163, respectively.

The first and second pad electrodes 181 and 183 allow the light emitting device 200a to be more stably mounted on a separate additional substrate or the like when the light emitting device 200a is applied to a module. For example, when the first and second electrodes 161 and 163 include a sintered body of Cu or Ag particles, the lower surfaces of the first and second electrodes 161 and 163 have poor wettability with respect to solder or the like. . Accordingly, by further disposing the first and second pad electrodes 181 and 183 on the lower surface of the insulating part 170 , the light emitting device can be stably mounted.

A horizontal area of each of the first and second pad electrodes 181 and 183 may be greater than a horizontal area of the first and second electrodes 161 and 163 exposed on the lower surface of the insulating part 170 . Accordingly, the exposed regions of the first and second electrodes 161 and 163 may be located in regions where the first and second pad electrodes 181 and 183 are formed, respectively. By forming the area of each of the first and second pad electrodes 181 and 183 to be larger than the area of each of the areas of the first and second electrodes 161 and 163 exposed on the lower surface of the insulating part 170 , the light emitting device may be more stably mounted on a separate additional substrate or the like.

The first electrode pad 181 and the second electrode pad 183 may include a conductive material such as metal, for example, Ni, Pt, Pd, Rh, W, Ti, Al, Ag, Sn, Cu. , Ag, Bi, In, Zn, Sb, Mg, Pb, and the like. In addition, each of the first and second electrode pads 181 and 183 may be formed of a single layer or a multilayer.

Meanwhile, the light emitting device 200a may further include a wavelength conversion unit (not shown) positioned on the lower surface of the light emitting unit 100L. The wavelength conversion unit converts the wavelength of the light emitted from the light emitting unit 100L to realize the light emitting device 200a emitting light in various wavelength bands.

Next, a method of manufacturing a light emitting device according to another embodiment of the present invention will be described with reference to FIGS. 2B and 3B . The method of manufacturing the light emitting device of this embodiment is substantially similar to the embodiment described with reference to FIGS. 2A and 3A , but there is a difference in the preliminary electrode 260a and the electrode 260 . Hereinafter, the present embodiment will be described focusing on the differences, and all of the technical features, configurations, and limitations described in FIGS. 2A and 3A may be applied to the present embodiment as well. In addition, detailed description of the same configuration will be omitted.

Referring to FIG. 2B (a) , a preliminary electrode 260a is formed on the wafer 100 .

The preliminary electrode 260a may be formed on the wafer 100 to cover the upper surface of the wafer 100 exposed between the insulating parts 170 , and in particular, may be formed to completely cover the insulating parts 170 . there is. The preliminary electrode 260a may be formed by coating a viscous material including metal particles and a non-metallic material on the wafer 100 . In this case, the preliminary electrode 260a may be applied on the wafer 100 to a thickness greater than the height of the insulating parts 170 to completely cover the insulating parts 170 .

Next, referring to (b) of FIG. 2B , an electrode 260 is formed from the preliminary electrode 260a.

The electrode 260 may be formed by sintering the preliminary electrode 260a. For example, the electrode 260 may be formed by heating the preliminary electrode 260a to a temperature of about 300° C. or less. During the sintering process, the metal particles of the preliminary electrode 260a may be deformed into a sintered form. In the process of forming the electrode 260 through sintering, the volume of the preliminary electrode 260a may be reduced to form the electrode 260 . Accordingly, as illustrated, the electrode 260 may have a smaller volume than the preliminary electrode 260a. Also, in the present embodiment, even after the preliminary electrode 260a is sintered to reduce the volume, the electrode 260 may be formed to cover the insulating portions 170 . Accordingly, the side surface 260s of the electrode 260 may be formed to be substantially perpendicular to the upper surface of the wafer 100 .

Compared with the preliminary electrode 160a and the electrode 160 of FIG. 2A , the preliminary electrode 260a and the electrode 260 have different manufacturing methods, but may be substantially the same material.

Next, referring to (c) of FIG. 2B , the electrode 260 is partially removed to expose the insulating portion 170 .

The upper portion of the electrode 260 may be removed, for example, by removing a portion of the electrode 260 positioned above the predetermined virtual line FF as shown in the figure to form the upper surface of the insulating part 170 . can be exposed. Removing a portion of the electrode 260 may use, for example, a lapping process.

Accordingly, a plurality of electrodes 260 positioned in the region between the insulating portions 170 may be formed. In addition, each of the formed electrodes 260 may be formed to be in contact with the side surface of the insulating part 170 , and the side surface of the electrode 260 may be formed to be substantially perpendicular to the upper surface of the wafer 100 .

Referring to (d) of FIG. 2B , pad electrodes 180 positioned on the electrodes 260 may be formed, and then, referring to FIG. 2B (e), the wafer 100 is divided into device division lines. By dividing along (L), at least one light emitting device 200b as shown in FIG. 3B is formed.

According to the manufacturing method of this embodiment, as shown in FIG. 3B, the light emitting device 200b in which the side surfaces 260s of the electrodes 261 and 263 are formed substantially perpendicular to the upper surface of the light emitting part 100L will be provided. can

The half value of the shortest distance of the distance 260D1 between the first electrode 261 and the second electrode 263 is the value of the insulating portion 170 from one side of the first electrode 261 and the second electrode 263 . It may be smaller than the shortest distance 260D2 to the outer side, and further, the shortest distance 260D1 between the first electrode 261 and the second electrode 263 is the first electrode 261 and the second electrode 263 . It may be smaller than the shortest distance 260D2 from one side of the insulator 170 to the outer side of the insulating part 170 . That is, the electrodes 260 may be formed to be relatively focused on the center of the light emitting device 200b. In the light emitting part 100L, an insulating layer or a contact electrode may be positioned on a side surface of the light emitting part 100L, and the light emitting region (active layer) may be mainly focused on the center of the light emitting part 100L. Most of the heat generated when the light emitting device 200b emits light may originate from the light emitting region. According to the present embodiment, since the electrode 160 is relatively focused on the center of the light emitting device 200b, heat generated when the light emitting device 200b is driven can be more effectively radiated through the electrode 160 . In addition, the distance 260D1 between the first electrode 261 and the second electrode 263 may be 100 μm or less, and further, may be in the range of 10 to 80 μm.

According to the present embodiment, since the side surface 260s of the electrode 260 is formed to be substantially perpendicular to the light emitting part 100L, heat dissipation efficiency by the electrode 260 may be further improved.

4 to 6B are cross-sectional views for explaining a method of manufacturing a light emitting device according to other embodiments of the present invention. In the drawings of the present embodiments, the light emitting device of FIG. 6A may be provided according to the manufacturing method of FIGS. 4 and 5A , and the light emitting device of FIG. 6B may be provided according to the manufacturing method of FIGS. 4 and 5B . . In addition, in the present embodiments, a detailed description of a configuration substantially the same as that described in the embodiment of FIGS. 1 to 3B will be omitted. The same reference numerals apply to the same components.

First, referring to FIG. 4 , a mask 210 including at least two openings 213 is formed on the wafer 100 .

The mask 210 may be provided by coating a photoresist on the wafer and then patterning it to form the opening 213 . In this case, at least two adjacent openings 213 may be located on one device region DR.

The masking region of the mask 210 may be formed to have at least two different widths. Some of the masking regions may be positioned on one device region DR, and the remaining masking regions may be formed across the device regions DR adjacent to each other. In this case, the width D1 ′ of the masking region of the mask 210 positioned on one device region DR is different from the width D2 ′ of the masking region D2 ′ formed across the device regions DR adjacent to each other. can

For example, the width of the masking region positioned on one device region DR is defined as D1′, and the width of the masking region positioned on the device regions DR adjacent to each other is defined as D2′. . In this case, D1' and D2' may be different from each other, and D2' may be greater than D1', and further, a half value of D2' may be greater than a half value of D1'. In an individual device division process to be described later, the insulating portion 170 formed in a region corresponding to the masking region having a width of D2 ′ is separated along the device division line L . In this case, for each individual device, the insulating portion 170 having a width corresponding to a half value of D2' may be formed along the outer side surface of the light emitting device.

In addition, the width D1 ′ of the masking region of the mask 210 positioned on one device region DR may be 100 μm or less, and in particular, may be in the range of 10 to 80 μm.

According to the width of the masking region of the mask 210 , the spacing between the electrodes 160 may be determined in a process to be described later.

Next, referring to FIGS. 5A and 5B , electrodes 160 or 260 and insulating portions 170 are formed on the wafer 100 , and the wafer 100 is divided into individual device units. 5A and 5B are diagrams for explaining a method of manufacturing a light emitting device according to different embodiments, the light emitting device of FIG. 6A may be provided according to the method of FIG. 5A, and the light emitting device of FIG. 6B according to the method of FIG. 5B A device may be provided.

First, a method of manufacturing a light emitting device according to another embodiment of the present invention will be described with reference to FIGS. 5A and 6A .

Referring to FIG. 5A (a) , a preliminary electrode 160a is formed on the wafer 100 .

The preliminary electrode 160a covers the upper surface of the wafer 100 exposed between the insulating parts 170 on the wafer 100 with the metal particles and a viscous material including a non-metallic material interposed between the metal particles. It can be formed by forming. Accordingly, at least two preliminary electrodes 160a spaced apart from each other with the insulating part 170 interposed therebetween may be formed. A top surface of the preliminary electrode 160a may be formed to be substantially parallel to the top surface of the insulating part 170 , and accordingly, the insulating part 170 may be at least partially exposed between the preliminary electrodes 160a.

Next, referring to (b) of FIG. 5A , the electrode 160 is formed from the preliminary electrode 160a.

The electrode 160 may be formed by sintering the preliminary electrode 160a. For example, the electrode 160 may be formed by heating the preliminary electrode 160a to a temperature of about 300° C. or less. Accordingly, a plurality of electrodes 160 filling the openings 213 of the mask 210 may be formed.

During the sintering process, the metal particles of the preliminary electrode 160a may be deformed into a sintered form, and a non-metallic material may be interposed between the metal particles. Accordingly, the electrode 160 may include metal particles and a non-metal material interposed between the metal particles. The metal particles of the electrode 160 may be included in a ratio of 80 to 98 wt% based on the total mass of the electrode 160 .

In addition, during the sintering process, the volume of the preliminary electrode 160a is reduced due to solidification and/or evaporation of the non-metallic material included in the preliminary electrode 160a, so that the volume of the electrode 160 is the volume of the preliminary electrode 160a. may be smaller than However, in the portion where the preliminary electrode 160a and the wafer 100 are in contact, the preliminary electrode 160a and the wafer 100 are adhered, so that even during the sintering process, the preliminary electrode 160a of this portion can maintain the adhesive state almost as it is. there is. Accordingly, a volume reduction may occur in the portion of the preliminary electrode 160a positioned above the interface between the preliminary electrode 160a and the wafer 100 , and as shown, the side surface 160s of the electrode 160 is can be inclined In particular, the angle between the side surface 160s of the electrode 160 and the wafer 100 may have an angle of 90° or less. In addition, in this case, the electrode 160 may include a side surface 160s in which the slope of the tangent to the side surface of the vertical cross-section changes. Due to the nature of the sintering process, the slope of the tangent line with respect to the side surface of the vertical cross section of each of the electrodes 160 increases in the direction from the bottom to the top, and then passes a predetermined inflection point and decreases again.

Referring to FIG. 5A (c) , the electrodes 160 spaced apart from each other are formed on the wafer 100 by removing the mask 210 . Accordingly, the upper surface of the wafer 100 is exposed between the electrodes 160 .

The mask 210 may be removed through various well-known methods, such as an etching process. When the mask 210 includes a photoresist, the mask 210 may be removed using a chemical solution to which the photoresist reacts.

In this embodiment, it is described that the electrode 160 is formed and the mask 210 is removed, but the present invention is not limited thereto, and the order may be reversed.

Next, referring to FIG. 5A ( d ), the insulating part 170 is formed in the spaced region between the electrodes 160 .

The insulating part 170 may be formed by applying a material such as an epoxy molding compound (EMC) or a Si resin having electrical insulating properties to cover the electrodes 160 on the wafer 100 and then curing it. The insulating part 170 may be formed to fill the area between the electrodes 160 , and side surfaces of the electrodes 160 may be in contact with the insulating part 170 . Accordingly, the electrodes 160 are insulated from each other. In addition, the insulating portion 170 may include light reflective and light scattering particles such as _{TiO 2 particles.}

Referring to (e) of FIG. 5A , pad electrodes 180 positioned on the electrodes 160 may be formed, and then, referring to FIG. 5A (f), the wafer 100 is divided into device division lines. By dividing along (L), at least one light emitting device 200a as shown in FIG. 6A is formed.

The light emitting device 200a is substantially the same as the light emitting device 200a of FIG. 3A , and a detailed description thereof will be omitted.

In this embodiment, unlike the embodiment of FIGS. 1 to 2A , the electrode 160 may be formed before the insulating part 170 . According to the present embodiment, since the insulating part 170 is formed after the electrode 160 is formed, the electrode 160 and the insulating part formed by reducing the volume of the preliminary electrode 160a in the process of forming the electrode 160 . There is no need to separately form the secondary insulating portion 173 for filling the spaced region 170 . Accordingly, the light emitting device manufacturing process may be simplified.

Next, a method of manufacturing a light emitting device according to another embodiment of the present invention will be described with reference to FIGS. 5B and 6B . The method of manufacturing the light emitting device of this embodiment is substantially similar to the embodiment described with reference to FIGS. 5A and 6A , but there is a difference in the preliminary electrode 260a and the electrode 260 . Hereinafter, the present embodiment will be described focusing on the differences, and all of the technical features, configurations, and limitations described in FIGS. 5A and 6A may be applied to the present embodiment as well. In addition, detailed description of the same configuration will be omitted.

Referring to (a) of FIG. 5B , a preliminary electrode 260a is formed on the wafer 100 .

The preliminary electrode 260a may be formed to cover the upper surface of the wafer 100 exposed to the opening 213 on the wafer 100 , and in particular, may be formed to completely cover the mask 210 . The preliminary electrode 260a may be formed by coating a viscous material including metal particles and a non-metallic material on the wafer 100 . In this case, the preliminary electrode 260a may be applied on the wafer 100 to a thickness greater than the height of the mask 210 so as to completely cover the mask 210 .

Next, referring to (b) of FIG. 5B , an electrode 260 is formed from the preliminary electrode 260a.

The electrode 260 may be formed by sintering the preliminary electrode 260a. For example, the electrode 260 may be formed by heating the preliminary electrode 260a to a temperature of about 300° C. or less. During the sintering process, the metal particles of the preliminary electrode 260a may be deformed into a sintered form. In the process of forming the electrode 260 through sintering, the volume of the preliminary electrode 260a may be reduced to form the electrode 260 . Accordingly, as illustrated, the electrode 260 may have a smaller volume than the preliminary electrode 260a. Also, in the present embodiment, even after the preliminary electrode 260a is sintered to reduce the volume, the electrode 260 may be formed to cover the mask 210 . Accordingly, the side surface 260s of the electrode 260 may be formed to be substantially perpendicular to the upper surface of the wafer 100 .

Compared with the preliminary electrode 160a and the electrode 160 of FIG. 5A , the preliminary electrode 260a and the electrode 260 have different manufacturing methods, but may be substantially the same material.

Next, referring to (c) and (d) of FIG. 5B , the electrode 260 is partially removed to expose the mask 210 .

A portion of the electrode 260 may be removed, for example, by removing a portion of the electrode 260 positioned above the predetermined virtual line FF as shown, the upper surface of the mask 210 is can be exposed. Removing a portion of the electrode 260 may use, for example, a lapping process.

Accordingly, a plurality of electrodes 260 positioned in the region between the insulating portions 170 may be formed. In addition, each of the formed electrodes 260 may be formed to be in contact with the side surface of the insulating part 170 , and the side surface 260s of the electrode 260 may be formed to be substantially perpendicular to the top surface of the wafer 100 .

Referring to (e) of FIG. 5B , the upper surface of the wafer 100 is partially exposed by removing the mask 210 between the electrodes 260 . Accordingly, a plurality of electrodes 260 spaced apart from each other may be formed.

The mask 210 may be removed through various well-known methods, such as an etching process. When the mask 210 includes a photoresist, the mask 210 may be removed using a chemical solution to which the photoresist reacts.

Next, referring to (f) of FIG. 5B , an insulating portion 170 is formed in a spaced region between the electrodes 260 .

The insulating part 170 may be formed by applying a material such as an EMC (Epoxy Molding Compound) or Si resin having electrical insulating properties to cover the electrodes 260 on the wafer 100 and then curing the same. The insulating part 170 may be formed to fill the area between the electrodes 160 , and side surfaces 260s of the electrodes 260 may be in contact with the insulating part 170 . Accordingly, the electrodes 160 are insulated from each other. In addition, the insulating portion 170 may include light reflective and light scattering particles such as _{TiO 2 particles.}

Referring to (g) of FIG. 5B , pad electrodes 180 positioned on the electrodes 260 may be formed, and then, referring to FIG. 5A (h), the wafer 100 is divided into device division lines. By dividing along (L), at least one light emitting device 200b as shown in FIG. 6B is formed.

The light emitting device 200b is substantially the same as the light emitting device 200b of FIG. 3B , and a detailed description thereof will be omitted.

According to the embodiment of FIGS. 4 to 6B , the electrode 160 or 260 is formed before the insulating part 170 is formed. Accordingly, the distance between the electrodes 160 or 260 may be adjusted according to the width of the masking region of the mask 210 .

Specifically, according to the present embodiment, the width of the insulating portion 170 formed over the adjacent device regions DR may be freely determined according to the width of the masking region of the mask 210 . Accordingly, the width of the insulating portion 170 formed over the adjacent device regions DR can be sufficiently increased, thereby preventing damage to the electrode 160 by a laser or a dicing tool in the process of dividing individual devices.

That is, by freely determining the width of the insulating portions 170 formed between the electrodes 160 in the process of forming the mask 210 , the width ( The width (corresponding to D1') may be formed to be relatively small, and the width (corresponding to D2') between the electrodes 160 positioned across the adjacent device regions DR may be formed to be relatively large. Accordingly, the heat dissipation efficiency of the manufactured light emitting device can be improved, the forward voltage can be prevented from increasing, and the light emitting device can be effectively prevented from being damaged in the individual device division process.

7 and 8 are cross-sectional views for explaining a light emitting device according to other embodiments of the present invention.

7 and 8 relate to a light emitting device having a general flip-chip structure, which will be described in detail below. However, the same reference numerals are given to the same components as those described with reference to FIGS. 1 to 6B , and detailed description thereof will be omitted. In addition, in the embodiments of FIGS. 1 to 6B , the technical features, configurations, and limitations additionally described may all be applied to the present embodiment.

First, referring to FIG. 7 , the light emitting device 200c includes a light emitting structure 120 , an electrode 160 , and contact electrodes 130 and 140 , and an insulating part 170 , and further, the first and It may further include second pad electrodes 181 and 183 , an insulating layer 150 , and a wavelength converter 190 .

The light emitting structure 120 includes a first conductivity type semiconductor layer 121 , an active layer 123 located on the first conductivity type semiconductor layer 121 , and a second conductivity type semiconductor layer ( 125) may be included. The first conductivity type semiconductor layer 121 , the active layer 123 , and the second conductivity type semiconductor layer 125 may include a III-V series compound semiconductor, for example, (Al, Ga, In)N and The same nitride-based semiconductor may be included. The first conductivity-type semiconductor layer 121 may include an n-type impurity (eg, Si), and the second conductivity-type semiconductor layer 125 may include a p-type impurity (eg, Mg). there is. Also, vice versa. The active layer 123 may include a multiple quantum well structure (MQW).

Also, the light emitting structure 120 may include a region in which the second conductivity type semiconductor layer 125 and the active layer 123 are partially removed and the first conductivity type semiconductor layer 121 is partially exposed.

The contact electrodes 130 and 140 may include a first contact electrode 130 and a second contact electrode 140 . The first contact electrode 130 and the second contact electrode 140 may be positioned on and contact the first and second conductivity-type semiconductor layers 121 and 125 , respectively, and may be in ohmic contact with each other.

The first contact electrode 130 and the second contact electrode 140 are not limited as long as they are a material capable of forming an ohmic contact with the nitride-based semiconductor, and may include, for example, a metal, a conductive oxide, or a conductive nitride. .

The insulating layer 150 may partially cover the light emitting structure 120 and the contact electrodes 130 and 140 . The insulating layer 150 may cover an upper surface of the light emitting structure 120 , a side surface of the mesa including the second conductivity type semiconductor layer 125 and the active layer 123 , and a portion of the contact electrodes 130 and 140 . The insulating layer 150 may more effectively insulate the first contact electrode 130 and the second contact electrode 140 , and may also serve to protect the light emitting structure 120 from an external environment.

The electrode 160 may be positioned on the light emitting structure 120 , and may include a first electrode 161 and a second electrode 163 . In this case, the first electrode 161 and the second electrode 163 may be positioned on the first contact electrode 130 and the second contact electrode 140 , respectively, and may be electrically connected to each other. Accordingly, the first and second electrodes 161 and 163 may be electrically connected to the first conductivity-type semiconductor layer 121 and the second conductivity-type semiconductor layer 125 , respectively.

Also, the first and second electrodes 161 and 163 may directly contact the contact electrodes 130 and 140 .

Each of the first electrode 161 and the second electrode 163 may include an inclined side surface. Each of the first electrode 161 and the second electrode 163 may include an inclined side surface in which the slope of a tangent line to the side surface of the vertical cross-section changes. Furthermore, each inclined side surface of the first electrode 161 and the second electrode 163 may include a region in which the slope of the tangent line increases and a region in which the slope of the tangent line decreases.

The first and second electrodes 161 and 163 and the insulating portion 170 include inclined side surfaces of the first and second electrodes 161 and 163 in which the slope of the tangent to the side of the vertical cross-section changes. ), the mechanical stability at the interface can be improved.

Alternatively, each side surface of the first electrode 161 and the second electrode 163 may be formed to be substantially perpendicular to the upper surface of the light emitting structure 120 . In this case, heat dissipation efficiency by the first electrode 161 and the second electrode 163 may be improved.

Meanwhile, the distance between the first electrode 161 and the second electrode 163 at the shortest distance may be about 100 μm or less, and further, may be about 10 to 80 μm. Specifically, in this embodiment, the shortest distance from the portion where the first electrode 161 is in contact with the insulating portion 150 to the portion where the second electrode 163 is in contact with the insulation portion 150 may be about 10 to 80 μm. there is. Since the shortest distance among the intervals between the first electrode 161 and the second electrode 163 is provided in the above-described range, it is possible to prevent the forward voltage Vf from increasing, and also, the electrodes 161 and 163 . Since the horizontal cross-sectional area of the light emitting device 200c can be increased, the heat dissipation efficiency of the light emitting device 200c can be improved.

The first electrode 161 and the second electrode 163 may include metal particles and a non-metallic material interposed between the metal particles. In addition, each of the first and second electrodes 161 and 163 may include the metal particles. The metal particles may be included in a ratio of 80 to 98 wt% based on the mass of each of the first and second electrodes 161 and 163 . The metal particles are not limited as long as they are materials having thermal conductivity and electrical conductivity, and may include, for example, Cu, Au, Ag, Pt, and the like. The non-metallic material may be derived from a material to be sintered for forming the electrode 160 , and may be, for example, a polymer material containing C.

In addition, the first electrode 161 and the second electrode 163 may have a thickness of about 50 to 80 μm. Since the light emitting device according to the present embodiment includes the electrode 160 having a thickness in the above-described range, the light emitting device itself may be used as a chip scale package.

The insulating part 170 may be formed on the light emitting structure 120 to cover the side surface of the electrode 160 . The first electrode 161 and the second electrode 163 may be exposed on the upper surface of the insulating part 170 .

The insulating part 170 has electrical insulation and covers the side surfaces of the first electrode 161 and the second electrode 163 to effectively insulate them from each other. At the same time, the insulating part 170 may serve to support the first electrode 161 and the second electrode 163 . A lower surface of the insulating part 170 may be formed in parallel to substantially the same height as lower surfaces of the first electrode 161 and the second electrode 163 .

The insulating part 170 may include an insulating polymer and/or an insulating ceramic, for example, a material such as EMC (Epoxy Molding Compound) or a Si resin. In addition, the insulating portion 170 may include light reflective and light scattering particles such as _{TiO 2 particles.}

The first pad electrode 181 and the second pad electrode 183 may be positioned on one surface of the insulating part 170 . In particular, as illustrated, the first pad electrode 181 and the second pad electrode 183 have the insulating part 170 exposed to the first and second electrodes 161 and 163 among the surfaces of the insulating part 170 . ) may be located on the lower surface of the The first electrode pad 181 and the second electrode pad 183 may include a conductive material such as metal, for example, Ni, Pt, Pd, Rh, W, Ti, Al, Ag, Sn, Cu. , Ag, Bi, In, Zn, Sb, Mg, Pb, and the like. In addition, each of the first and second electrode pads 181 and 183 may be formed of a single layer or a multilayer.

The wavelength converter 190 may be located on the lower surface of the light emitting structure 120 .

The wavelength converter 190 converts the wavelength of the light emitted from the light emitting structure 120 so that the light emitting device can emit light in a desired wavelength band. The wavelength conversion unit 190 may include a phosphor and a carrier on which the phosphor is supported. The phosphor may include various phosphors well known to those skilled in the art, and may include at least one of a garnet-type phosphor, an aluminate phosphor, a sulfide phosphor, an oxynitride phosphor, a nitride phosphor, a fluoride-based phosphor, and a silicate phosphor. The carrier may also use a material well known to those skilled in the art, and may include, for example, a polymer resin such as an epoxy resin or an acrylic resin, or a silicone resin. In addition, the wavelength converter 190 may be formed of a single layer or multiple layers.

The light emitting device 200c may further include a growth substrate (not shown), wherein the growth substrate may be interposed between the light emitting structure 120 and the wavelength converter 190 . In addition, the insulating part 170 may be formed to further cover the side surface of the light emitting structure 120 , and in this case, the wavelength converting part 190 and the insulating part 170 may be in contact.

Meanwhile, after the lower surface of the light emitting structure 120 , that is, the lower surface of the first conductivity type semiconductor layer 121 is separated from the growth substrate, its roughness is increased to include roughness. Accordingly, the light emitting device 200d as shown in FIG. 8 may be provided. Although the wavelength converter 190 is omitted in FIG. 8 , the light emitting device 200d may further include a wavelength converter 190 .

The roughness may be formed by dry etching, wet etching, and/or electrochemical etching the surface of the first conductivity type semiconductor layer 121 . For example, roughness may be formed by wet etching one surface of the light emitting structure 120 using a solution containing at least one of KOH and NaOH, or PEC etching may be used. Also, roughness may be formed by combining dry etching and wet etching. Accordingly, roughness including protrusions and/or concavities in a μm to nm scale may be formed on the surface of the first conductivity type semiconductor layer 121 . The above-described methods of forming the roughness correspond to examples, and the roughness may be formed on the surface of the light emitting structure 120 using various methods known to those skilled in the art. By forming roughness on the surface of the light emitting structure 120 , extraction efficiency of the light emitting device may be improved.

9 and 10 are plan views and cross-sectional views illustrating a light emitting device according to another embodiment of the present invention.

9 and 10 relate to the structure of the light emitting device, which will be described in detail below. However, the same reference numerals are assigned to the same components as those described with reference to FIGS. 1 to 6B , and detailed description thereof will be omitted. In addition, in the embodiments of FIGS. 1 to 6B , the technical features, configurations, and limitations additionally described may all be applied to the present embodiment.

9 (a) is a plan view of the light emitting device 200e, (b) is a plan view for explaining the position of the hole (120h) and the third opening (153a) and the fourth opening (153b), Fig. 10 is a cross-sectional view showing a cross section of a region corresponding to line AA in FIGS. 9A and 9B.

9 and 10 , the light emitting device 200e includes a light emitting structure 120 including a first conductivity type semiconductor layer 121 , an active layer 123 , and a second conductivity type semiconductor layer 125 , a first It may include a contact electrode 130 , a second contact electrode 140 , a first insulating layer 151 , a second insulating layer 153 , a first electrode 161 , and a second electrode 163 . Furthermore, the light emitting device 200e may further include an insulating part 170 , first and second pad electrodes 181 and 183 , a growth substrate (not shown), and a wavelength converter (not shown).

The light emitting structure 120 includes a first conductivity type semiconductor layer 121 , an active layer 123 located on the first conductivity type semiconductor layer 121 , and a second conductivity type semiconductor layer ( 125) may be included. Also, the light emitting structure 120 may include a region in which the second conductivity type semiconductor layer 125 and the active layer 123 are partially removed and the first conductivity type semiconductor layer 121 is partially exposed. For example, as shown, the light emitting structure 120 penetrates through the second conductivity type semiconductor layer 125 and the active layer 123 and exposes the first conductivity type semiconductor layer 121 through at least one hole 120h. ) may be included. However, the present invention is not limited thereto, and the arrangement shape and number of the holes 120h may be variously modified.

In addition, the shape in which the first conductivity type semiconductor layer 121 is exposed is not limited to the shape of the hole 120h. For example, the exposed region of the first conductivity-type semiconductor layer 121 may be formed in a line shape, a combination of holes and lines, or the like. When the region to which the first conductivity-type semiconductor layer 121 is exposed is formed in the form of a plurality of lines, the light emitting structure 120 is formed along the line, and the active layer 123 and the second conductivity-type semiconductor layer 125 are formed along the line. It may include one or more mesa comprising

The light emitting structure 120 may further include a roughness 120R formed on a lower surface thereof. The roughness 120R may include protrusions and/or concave portions in a μm to nm scale formed on the surface of the first conductivity type semiconductor layer 121 . By forming roughness on the surface of the light emitting structure 120 , extraction efficiency of the light emitting device may be improved.

The second contact electrode 140 is positioned on the second conductivity-type semiconductor layer 125 . The second contact electrode 140 may at least partially cover the upper surface of the second conductivity type semiconductor layer 125 and may be in ohmic contact. Also, the second contact electrode 140 may be disposed to completely cover the upper surface of the second conductivity type semiconductor layer 125 , and may be formed as a single body. Accordingly, current may be uniformly supplied to the entire light emitting structure 120 , and current dispersion efficiency may be improved.

However, the present invention is not limited thereto, and the second contact electrode 140 is not integrally formed, and a plurality of unit reflective electrode layers may be disposed on the upper surface of the second conductivity type semiconductor layer 125 .

The second contact electrode 140 may include a material capable of ohmic contact with the second conductivity type semiconductor layer 125 , for example, a metal material and/or a conductive oxide.

When the second contact electrode 140 includes a metal material, the second contact electrode 140 may include a reflective layer and a cover layer covering the reflective layer. As described above, the second contact electrode 140 may be in ohmic contact with the second conductivity-type semiconductor layer 125 and may function to reflect light. Accordingly, the reflective layer may include a metal capable of forming an ohmic contact with the second conductivity-type semiconductor layer 125 while having high reflectivity. For example, the reflective layer may include at least one of Ni, Pt, Pd, Rh, W, Ti, Al, Mg, Ag, and Au. In addition, the reflective layer may include a single layer or multiple layers.

The cover layer may prevent mutual diffusion between the reflective layer and other materials, and may prevent other materials from diffusing into the reflective layer from damaging the reflective layer. Accordingly, the cover layer may be formed to cover a lower surface and a side surface of the reflective layer. The cover layer may be electrically connected to the second conductivity type semiconductor layer 125 together with the reflective layer, and thus may serve as a kind of electrode together with the reflective layer. The cover layer may include, for example, Au, Ni, Ti, Cr, or the like, and may include a single layer or multiple layers.

Meanwhile, when the second contact electrode 140 includes a conductive oxide, the conductive oxide may be ITO, ZnO, AZO, IZO, or the like.

The first insulating layer 151 may partially cover the upper surface of the light emitting structure 120 and the second contact electrode 140 . In addition, the first insulating layer 151 may cover side surfaces of the plurality of holes 120h, and expose the top surface of the holes 120h to partially expose the first conductivity type semiconductor layer 121 . Furthermore, the first insulating layer 151 may further cover at least a portion of the side surface of the light emitting structure 120 .

Meanwhile, the degree to which the first insulating layer 151 covers the side surface of the light emitting structure 120 may vary depending on whether a chip unit is isolated during the manufacturing process of the light emitting device.

The first insulating layer 151 may include a first opening positioned at a portion corresponding to the plurality of holes 120h and a second opening exposing a portion of the second contact electrode 140 . The first conductivity-type semiconductor layer 121 may be partially exposed through the first opening and the holes 120h , and the second contact electrode 140 may be partially exposed through the second opening.

The first insulating layer 151 may include an insulating material, for example, SiO ₂ , SiN _x , MgF _{2 ,} or the like. Furthermore, the first insulating layer 151 may include multiple layers, and may include a distributed Bragg reflector in which materials having different refractive indices are alternately stacked. In particular, when the second contact electrode 140 includes a conductive oxide, the first insulating layer 151 includes a distributed Bragg reflector to improve luminous efficiency.

The first contact electrode 130 may partially cover the light emitting structure 120 and may be in ohmic contact with the first conductivity-type semiconductor layer 121 through the plurality of holes 120h and the first openings. In this case, the first contact electrode 130 may fill the hole 120h. The first contact electrode 130 may be formed to entirely cover a portion other than a partial region of the lower surface of the first insulating layer 151 . Also, the first contact electrode 130 may be formed to cover the side surface of the light emitting structure 120 . When the first contact electrode 130 is also formed on the side surface of the light emitting structure 120 , the light emitted from the side surface from the active layer 123 is reflected upward to increase the ratio of light emitted to the upper surface of the light emitting device 200e. can Meanwhile, the first contact electrode 130 is not formed in a region corresponding to the second opening of the first insulating layer 151 , but is spaced apart from the second contact electrode 140 and insulated.

Since the first contact electrode 130 is formed to entirely cover the upper surface of the light emitting structure 120 except for a partial region, current dissipation efficiency may be further improved. In addition, since the first contact electrode 130 may cover a portion not covered by the second contact electrode 140 , light may be reflected more effectively to improve the luminous efficiency of the light emitting device 200e.

The first contact electrode 130 may make ohmic contact with the first conductivity-type semiconductor layer 121 and may serve to reflect light. Accordingly, the first contact electrode 130 may be formed of a single layer or multiple layers, and may include a highly reflective metal layer such as an Al layer. The highly reflective metal layer may be formed on an adhesive layer such as Ti, Cr, or Ni. However, the present invention is not limited thereto.

Since the first contact electrode 130 is in ohmic contact with the first conductivity type semiconductor layer 121 through the holes 120h, the active layer 123 is formed to form an electrode connected to the first conductivity type semiconductor layer 121 . The area to be removed is the same as the area corresponding to the plurality of holes 120h. Accordingly, an area for ohmic contact between the first conductivity type semiconductor layer 121 and the metal layer may be minimized, and a light emitting diode having a relatively large area ratio of the light emitting area to the horizontal area of the entire light emitting structure may be provided.

The light emitting device 200e may further include a second insulating layer 153 , and the second insulating layer 153 may cover the first contact electrode 130 . The second insulating layer 153 may include a third opening 153a partially exposing the first contact electrode 130 and a fourth opening 153b partially exposing the second contact electrode 140 . there is. In this case, the fourth opening 153b may be formed at a position corresponding to the second opening 151b.

One or more of the third and fourth openings 153a and 153b may be formed, respectively. In addition, as shown in (b) of FIG. 3 , when the third opening 153a is positioned adjacent to one edge of the light emitting device 200e, the fourth opening 153b is adjacent to the other edge of the light emitting device 200e. can be located

The second insulating layer 153 may include an insulating material, for example, SiO ₂ , SiN _x , or MgF ₂ . Furthermore, the second insulating layer 153 may include multiple layers, and may include a distributed Bragg reflector in which materials having different refractive indices are alternately stacked.

The first electrode 161 and the second electrode 163S may be positioned on the second insulating layer 153 . Also, the first electrode 161 may be positioned on the third opening 153a to be in contact with the first contact electrode 130 , and the second electrode 163 may be positioned on the fourth opening 153b to be in contact with the first contact electrode 130 . It may be in contact with the second contact electrode 140 .

As such, each of the first electrode 161 and the second electrode 163 may directly contact the first and second contact electrodes 130 and 140 . Accordingly, before forming the first electrode 161 and the second electrode 163 , it may be omitted to form an additional seed layer or a wetting layer, and thus the manufacturing process of the light emitting device may be simplified.

A half value of the shortest distance of the distance 160D1 between the first electrode 161 and the second electrode 163 is the value of the insulating portion 170 from one side of the first electrode 161 and the second electrode 163 . It may be smaller than the shortest distance 160D2 to the outer side, and further, the shortest distance 160D1 between the first electrode 161 and the second electrode 163 is the first electrode 161 and the second electrode 163 . It may be smaller than the shortest distance 160D2 from one side of one side to the outer side of the insulating part 170 . That is, the electrodes 160 may be formed to be relatively focused on the center of the light emitting device 200a. In the light emitting device 200e of this embodiment, the insulating layers 151 and 153 or the contact electrodes 130 and 140 may be positioned on the side surface of the light emitting structure 120, and the active layer 123 is mainly the light emitting structure. It may be located focused on the center of (120). Since the electrode 160 is relatively focused on the center of the light emitting device 200e, heat generated from the active layer 123 may be more effectively radiated through the electrode 160 when the light emitting device 200e is driven.

Since the description related to the first electrode 161 and the second electrode 163 is substantially similar to that described with reference to FIGS. 1 to 8 , a detailed description thereof will be omitted. In particular, the shortest distance between the intervals 160D1 between the first and second electrodes 161 and 163 may be provided within a range of 10 to 80 μm.

The insulating part 170 may cover the second insulating layer 153 and side surfaces of the first electrode 161 and the second electrode 163 . In particular, as shown, the insulating part 170 may further cover the side surface of the light emitting structure 120 .

Meanwhile, the degree to which the insulating part 170 covers the side surface of the light emitting structure 120 may vary depending on whether chip unit isolation is performed in the manufacturing process of the light emitting device, and this will be described later in detail.

Descriptions related to the insulating part 170 , the first pad electrode 181 , and the second pad electrode 183 are substantially similar to those described with reference to FIGS. 1 to 8 , and thus a detailed description thereof will be omitted.

The wavelength converter (not shown) may be located on the lower surface of the light emitting structure 120 . A portion of the wavelength converter may be in contact with the first insulating layer 151 . In addition, the wavelength conversion unit may be formed to cover up to the side surface of the light emitting structure 120 , and further, may be formed to further cover the side surface of the insulating unit 170 .

Since the description related to the wavelength converter is substantially similar to that described with reference to FIG. 7 , a detailed description thereof will be omitted.

Meanwhile, the light emitting device 200e may further include a growth substrate (not shown) positioned on the lower surface of the light emitting structure 120 . When the light emitting device 200e includes a wavelength converter, the growth substrate may be positioned between the light emitting structure 120 and the wavelength converter.

According to the present embodiment, the first and second electrodes including sintered metal particles are employed in the light emitting device having a structure in which current can be uniformly distributed in the horizontal direction during driving. Accordingly, even if stress is applied to the first and second electrodes due to heat generated during driving of the light emitting device, the stress may be relieved by the non-metallic material included in the electrode. Accordingly, the reliability of the light emitting device may be improved. In addition, since the shortest distance 160D1 between the first and second electrodes 161 and 163 is provided within a range of 10 to 80 μm, a low forward voltage can be implemented and heat generated during driving can be effectively dissipated. .

11 and 12 are cross-sectional views for explaining a light emitting device according to other embodiments of the present invention.

Referring to FIG. 11 , the light emitting device includes a light emitting device and a substrate 300 according to embodiments of the present invention. As the light emitting device, the light emitting devices described with reference to FIGS. 1 to 10 may be applied, and may be mounted on the substrate 300 .

The substrate 300 may be, for example, a PCB including a first conductive pattern 311 , a second conductive pattern 313 , and an insulating layer 320 insulating them. In particular, the PCB may be a metal PCB in which the first and second conductive patterns 311 and 313 are formed of a metal. However, the present invention is not limited thereto, and the substrate 300 may be a substrate having various structures well known to those skilled in the art.

The light emitting device 200a may include first and second pad electrodes 181 and 183, and the first and second pad electrodes 181 and 183 have first and second conductive patterns 311 and 313, respectively. ) by being attached to the light emitting device 200a may be mounted on the substrate 300 . The first and second pad electrodes 181 and 183 may be bonded to the first and second conductive patterns 311 and 313 through solder or a conductive adhesive, respectively.

As described above, the light emitting device of the present invention can be used as a chip scale package that can be directly used without a separate packaging process.

Meanwhile, the light emitting device according to the present invention may be mounted on the substrate 300 without including the first and second pad electrodes 181 and 183 .

Referring to FIG. 12 , the light emitting device 200a does not include the first and second pad electrodes 181 and 183 , and may be adhered to the substrate 300 by separate bonding layers 231 and 233 .

The bonding layers 231 and 233 may include a metallic material such as metal, and for example, the light emitting device 200a and the substrate 300 may be bonded through eutectic bonding. For example, when the first and second conductive patterns 311 and 313 include Au, the light emitting device ( 231 , 233 ) including the Au/Sn alloy having an eutectic structure is used through the bonding layer ( 231 , 233 ). 200a) can be effectively adhered to the substrate 300 . However, the present invention is not limited thereto.

In the above, various embodiments of the present invention have been described, but the present invention is not limited to each of the above-described embodiments and features. The invention changed through the combination and substitution of technical features described in the embodiments is also included in the scope of the present invention, and various modifications and changes are possible within the scope without departing from the technical spirit of the claims of the present invention.

Claims (24)

A first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer positioned between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, the first surface and opposite to the first surface a light emitting structure including a second surface positioned thereon;
a first contact electrode and a second contact electrode positioned on the first surface of the light emitting structure and in ohmic contact with the first and second conductivity-type semiconductor layers, respectively;
first and second electrodes positioned on the first surface of the light emitting structure and electrically connected to the first and second contact electrodes, respectively; and
and an insulating part covering the side surfaces of the first and second electrodes and the first surface of the light emitting structure,
Each of the first and second electrodes comprises metal particles,
A half value of the shortest distance between the first electrode and the second electrode is smaller than the shortest distance from one side of one of the first electrode and the second electrode to the outer side of the insulating part,
Each of the first electrode and the second electrode includes a plurality of grains formed by sintering metal particles and a non-metallic material disposed between the metal particles. The method according to claim 1,
The shortest distance between the first electrode and the second electrode is 10 to 80㎛ the light emitting device. The method according to claim 1,
Each of the first electrode and the second electrode includes a slanted side surface in which the slope of a tangent to the side surface of the vertical cross-section changes. 4. The method according to claim 3,
An angle between the side surfaces of the first and second electrodes and the upper surface of the light emitting structure is 30° or more and less than 90°. The method according to claim 1,
A side surface of each of the first electrode and the second electrode is perpendicular to the first surface of the light emitting structure. The method according to claim 1,
The light emitting device further comprising a first pad electrode and a second pad electrode positioned on one surface of the insulating part and positioned on the first and second electrodes, respectively. The method according to claim 1,
Each of the first and second electrodes includes a light emitting device including the metal particles and a non-metallic material interposed between the metal particles. 8. The method of claim 7,
Each of the first and second electrodes is a light emitting device comprising 80 to 98 wt% of metal particles. The method according to claim 1,
The metal particle is a light emitting device comprising at least one of Cu, Au, Ag, and Pt. The method according to claim 1,
a region in which the active layer and the second conductivity type semiconductor layer are partially removed to partially expose the first conductivity type semiconductor layer;
a first insulating layer insulating the first and second contact electrodes from each other; and
a second insulating layer partially covering the first and second contact electrodes and including first and second openings exposing the first and second contact electrodes, respectively;
the first contact electrode is in ohmic contact with the first conductivity type semiconductor layer through a region where the first conductivity type semiconductor layer is exposed;
The first electrode and the second electrode directly contact the first and second contact electrodes through the first and second openings, respectively. The method according to claim 1,
The first electrode and the second electrode are in direct contact with the first and second contact electrodes, respectively. A light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer positioned between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and the first and second conductivity types preparing a wafer including at least one device region including a first contact electrode and a second contact electrode respectively in ohmic contact with the semiconductor layer; and
On the wafer, forming first and second electrodes electrically connected to the first and second contact electrodes, respectively, and forming an insulating part covering side surfaces of the first and second electrodes, ,
Each of the first and second electrodes comprises metal particles,
A half value of the shortest distance of the distance between the first electrode and the second electrode positioned in the device region is the shortest distance from one side of one of the first electrode and the second electrode to the side of the portion defining the device region smaller than,
The first electrode and the second electrode are formed by sintering a preliminary first electrode and a preliminary second electrode including metal particles and a non-metallic material. 13. The method of claim 12,
The shortest distance between the first electrode and the second electrode positioned in the device region is 10 to 80㎛ method of manufacturing a light emitting device. 13. The method of claim 12,
Forming the first electrode, the second electrode and the insulating portion,
forming a plurality of insulating portions spaced apart from each other on the wafer;
forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the insulating portions;
and sintering the preliminary first electrode and the preliminary second electrode to form the first electrode and the second electrode, respectively. 13. The method of claim 12,
Forming the first electrode, the second electrode and the insulating portion,
forming a plurality of masks spaced apart from each other on the wafer;
forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the masks;
forming the first and second electrodes by sintering the preliminary first and second electrodes, respectively;
removing the masks; and
and forming an insulating part filling the spaced region between the first electrode and the second electrode. 16. The method according to claim 14 or 15,
Each of the first and second electrodes formed by sintering has a smaller volume than the preliminary first and second preliminary electrodes,
Each of the first electrode and the second electrode includes an inclined side surface, and a horizontal cross-sectional area of each of the first and second electrodes becomes smaller in a direction away from the light emitting structure. 17. The method of claim 16,
Forming the first electrode, the second electrode and the insulating portion,
Further comprising further forming an insulating part to fill the spaced region between the first electrode and the insulating part formed by sintering the preliminary first and preliminary second electrodes and the spaced region between the second electrode and the insulating part A method for manufacturing a light emitting device. 17. The method of claim 16,
An area in which each of the preliminary first electrode and the preliminary second electrode contacts the wafer is the same as an area in which each of the first electrode and the second electrode contacts the wafer. 13. The method of claim 12,
Forming the first electrode, the second electrode and the insulating portion,
forming a plurality of insulating portions spaced apart from each other on the wafer;
forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the insulating parts and covering up to upper surfaces of the insulating parts;
sintering the preliminary first and preliminary second electrodes;
and partially removing upper portions of the sintered preliminary first and second preliminary electrodes to expose upper surfaces of the insulating portions, and to form the first and second electrodes as the first and second electrodes. 13. The method of claim 12,
Forming the first electrode, the second electrode and the insulating portion,
forming a plurality of masks spaced apart from each other on the wafer;
forming a preliminary first electrode and a preliminary second electrode filling the spaced apart regions of the masks and covering up to upper surfaces of the masks;
sintering the preliminary first and preliminary second electrodes;
partially removing upper portions of the sintered preliminary first and second electrodes to expose top surfaces of the masks and to form the first and second electrodes;
removing the masks; and
and forming an insulating part filling the spaced region between the first electrode and the second electrode. 21. The method of claim 19 or 20,
A method of manufacturing a light emitting device in which side surfaces of the first electrode and the second electrode are perpendicular to the upper surface of the wafer. 13. The method of claim 12,
The method further comprising forming a first pad electrode and a second pad electrode on the first electrode and the second electrode, respectively. 13. The method of claim 12,
The wafer includes a plurality of device regions, and the first and second electrodes are formed on each of the plurality of device regions. 24. The method of claim 23,
and dividing a portion of the wafer and the insulating portion into the plurality of device regions to form a plurality of light emitting devices.

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