KR102181999B1 - 확장 시트, 확장 시트의 제조 방법 및 확장 시트의 확장 방법 - Google Patents
확장 시트, 확장 시트의 제조 방법 및 확장 시트의 확장 방법 Download PDFInfo
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- 238000000034 method Methods 0.000 title description 14
- 239000003292 glue Substances 0.000 claims abstract description 71
- 239000000853 adhesive Substances 0.000 claims abstract description 48
- 230000001070 adhesive effect Effects 0.000 claims abstract description 47
- 239000000463 material Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 68
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000003672 processing method Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 244000025254 Cannabis sativa Species 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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Abstract
[해결수단] 판형의 피가공물(11)이 점착되어, 제1 방향(D1)에서 피가공물을 사이에 두고서 대면하며 또한 서로 멀어지는 방향으로 이동 가능한 제1 협지 수단(4) 및 제2 협지 수단(6)과, 제1 방향에 수직인 제2 방향(D2)에서 피가공물을 사이에 두고서 대면하며 또한 서로 멀어지는 방향으로 이동 가능한 제3 협지 수단(8) 및 제4 협지 수단(10)으로 피가공물 주변의 피협지 영역(A)이 협지되어 확장되는 확장 시트(1)로서, 기재(3)와, 기재 상에 형성되어, 자외선이 조사됨으로써 점착력이 저하하는 풀층(5)을 구비하고, 피협지 영역의 풀층의 점착력은 다른 영역(B)의 풀층의 점착력보다 낮다.
Description
도 2의 (A) 및 도 2의 (B)는 확장 시트의 제조 방법의 예를 모식적으로 도시하는 단면도이다.
도 3은 확장 시트가 확장 장치에 의해서 협지된 모습을 모식적으로 도시하는 사시도이다.
도 4는 확장 시트에 피가공물이 접착된 모습을 모식적으로 도시하는 사시도이다.
도 5는 확장 시트가 확장 장치에 의해서 확장된 모습을 모식적으로 도시하는 사시도이다.
도 6은 확장 시트에 환형의 프레임이 접착되는 모습을 모식적으로 도시하는 사시도이다.
도 7은 환형의 프레임을 따라서 확장 시트가 절단된 상태를 모식적으로 도시하는 사시도이다.
도 8은 확장 시트에 자외선이 조사되는 모습을 모식적으로 도시하는 사시도이다.
도 9는 확장 시트로부터 칩이 떼어내지는 모습을 모식적으로 도시하는 단면도이다.
도 10은 변형예에 따른 확장 시트의 구성예를 모식적으로 도시하는 사시도이다.
Claims (4)
- 판형의 피가공물이 점착되고, 제1 방향에서 상기 피가공물을 사이에 두고서 대면하며 또한 서로 멀어지는 방향으로 이동 가능한 제1 협지 수단 및 제2 협지 수단과, 상기 제1 방향에 수직인 제2 방향에서 상기 피가공물을 사이에 두고서 대면하며 또한 서로 멀어지는 방향으로 이동 가능한 제3 협지 수단 및 제4 협지 수단으로 상기 피가공물 주변의 피협지 영역이 협지되어 확장되는 확장 시트로서,
기재(基材)와, 이 기재 상에 형성되어, 자외선이 조사됨으로써 점착력이 저하하는 풀층을 구비하고,
상기 피협지 영역의 상기 풀층의 점착력은, 다른 영역의 상기 풀층의 점착력보다 낮은 것을 특징으로 하는 확장 시트. - 롤 형상으로 권취되어 시트 롤을 구성하는 제1항에 기재된 확장 시트로서,
상기 시트 롤의 권취 방향을 상기 제1 방향, 상기 제1 방향에 수직인 방향을 상기 제2 방향으로 하여, 상기 시트 롤의 상기 제1 방향으로 미리 정해진 간격으로 배치되어 상기 제2 방향의 일단부에서부터 타단부에 이르는 복수의 제1 저점착 영역과, 상기 시트 롤의 상기 제2 방향의 상기 일단부 측과 상기 타단부 측에 있어서 각각 상기 제1 방향으로 신장하는 제2 저점착 영역을 상기 피협지 영역으로서 갖는 것을 특징으로 하는 확장 시트. - 판형의 피가공물이 점착되어, 제1 방향에서 상기 피가공물을 사이에 두고서 대면하며 또한 서로 멀어지는 방향으로 이동 가능한 제1 협지 수단 및 제2 협지 수단과, 상기 제1 방향에 수직인 제2 방향에서 상기 피가공물을 사이에 두고서 대면하며 또한 서로 멀어지는 방향으로 이동 가능한 제3 협지 수단 및 제4 협지 수단으로 상기 피가공물 주변의 피협지 영역이 협지되어 확장되는 확장 시트의 제조 방법으로서,
기재와, 이 기재 상에 형성되고, 자외선이 조사됨으로써 점착력이 저하하는 풀층을 구비하는 확장 시트를 준비하는 준비 단계와,
상기 피협지 영역의 상기 풀층에 대하여 선택적으로 자외선을 조사함으로써, 상기 피협지 영역의 상기 풀층의 점착력을, 다른 영역의 상기 풀층의 점착력보다 저하시키는 자외선 조사 단계를 포함하는 것을 특징으로 하는 확장 시트의 제조 방법. - 기재와, 이 기재 상에 형성되고, 자외선이 조사됨으로써 점착력이 저하하는 풀층을 구비하는 확장 시트를 판형의 피가공물에 점착하는 제1 점착 단계와,
상기 제1 점착 단계를 실시하기 전 또는 실시한 후에, 제1 방향에서 상기 피가공물을 사이에 두고서 대면하는 제1 협지 수단과 제2 협지 수단으로 상기 확장 시트를 협지하고, 상기 제1 방향에 수직인 제2 방향에서 상기 피가공물을 사이에 두고서 대면하는 제3 협지 수단과 제4 협지 수단으로 상기 확장 시트를 협지하는 협지 단계와,
상기 점착 단계와 상기 협지 단계를 실시한 후, 상기 제1 협지 수단과 상기 제2 협지 수단을 상기 제1 방향에서 서로 멀어지는 방향으로 이동시키고, 상기 제3 협지 수단과 상기 제4 협지 수단을 상기 제2 방향에서 서로 멀어지는 방향으로 이동시키는 확장 단계와,
상기 확장 단계를 실시한 후, 상기 피가공물을 수용할 수 있는 개구를 갖춘 환형의 프레임을 상기 확장 시트의 상기 피가공물을 둘러싸는 영역에 점착하는 제2 점착 단계와,
상기 제2 점착 단계를 실시한 후, 상기 확장 시트를 상기 프레임을 따라서 절단하는 절단 단계와,
상기 협지 단계를 실시하기 전에, 상기 제1 협지 수단과 상기 제2 협지 수단과 상기 제3 협지 수단과 상기 제4 협지 수단으로 협지되는 피협지 영역의 상기 풀층에 대하여 선택적으로 자외선을 조사함으로써, 상기 피협지 영역의 상기 풀층의 점착력을 다른 영역의 상기 풀층의 점착력보다 저하시키는 자외선 조사 단계를 포함하는 것을 특징으로 하는 확장 시트의 확장 방법.
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| JP2016110320A JP6710457B2 (ja) | 2016-06-01 | 2016-06-01 | エキスパンドシート、エキスパンドシートの製造方法、及びエキスパンドシートの拡張方法 |
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| JP2021022606A (ja) * | 2019-07-25 | 2021-02-18 | 株式会社ディスコ | ウェーハの分割方法及びウェーハの分割に用いるテープ |
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| TW201743404A (zh) | 2017-12-16 |
| JP2017216403A (ja) | 2017-12-07 |
| JP6710457B2 (ja) | 2020-06-17 |
| KR20170136431A (ko) | 2017-12-11 |
| US10103055B2 (en) | 2018-10-16 |
| TWI728103B (zh) | 2021-05-21 |
| DE102017209185A1 (de) | 2017-12-07 |
| DE102017209185B4 (de) | 2025-08-07 |
| MY177238A (en) | 2020-09-09 |
| US20170352588A1 (en) | 2017-12-07 |
| SG10201704118WA (en) | 2018-01-30 |
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