KR101153570B1 - 반도체 패키지 모듈 - Google Patents
반도체 패키지 모듈 Download PDFInfo
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- KR101153570B1 KR101153570B1 KR1020100107766A KR20100107766A KR101153570B1 KR 101153570 B1 KR101153570 B1 KR 101153570B1 KR 1020100107766 A KR1020100107766 A KR 1020100107766A KR 20100107766 A KR20100107766 A KR 20100107766A KR 101153570 B1 KR101153570 B1 KR 101153570B1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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- H01L25/0655—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00 the devices being arranged next to each other
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
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- H—ELECTRICITY
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- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1617—Cavity coating
- H01L2924/16171—Material
- H01L2924/16172—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1617—Cavity coating
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/161—Cap
- H01L2924/166—Material
- H01L2924/167—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Electromagnetism (AREA)
- Toxicology (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
이를 위한 본 발명에 따른 반도체 패키지 모듈은 외부면과 측면에 차폐 실드가 형성되고 하부면에 홈 형태의 수용부가 적어도 하나 구비되는 반도체 패키지 및 일면에 적어도 하나의 대형 소자와 반도체 패키지가 실장되는 메인 기판을 포함하며, 대형 소자는 상기 반도체 패키지의 수용부에 수용되며 메인 기판에 실장되는 것을 특징으로 한다.
Description
도 2는 도 1에 도시된 반도체 패키지 모듈의 내부를 도시한 절단 사시도.
도 3은 도 2에 도시된 반도체 패키지 모듈의 분해 사시도.
도 4는 본 발명의 다른 실시예에 따른 반도체 패키지 모듈을 개략적으로 도시한 분해 사시도.
도 5는 본 발명의 또 다른 실시예에 따른 반도체 패키지 모듈을 개략적으로 도시한 분해 사시도.
10: 반도체 패키지
1: 전자 소자 2: 대형 소자
11: 패키지 기판
12: 회로 패턴
13: 실장용 전극 14: 비아홀
15: 외부 접속 단자
17: 수용부
20: 몰드부 25: 수용 홈
30: 차폐 쉴드
50: 메인 기판
52: 회로 패턴
53: 실장용 전극 54: 비아홀
Claims (8)
- 삭제
- 하부면에 홈 형태의 수용부가 적어도 하나 구비되는 반도체 패키지;
일면에 적어도 하나의 대형 소자와 상기 반도체 패키지가 실장되는 메인 기판;
을 포함하고,
상기 대형 소자는 상기 반도체 패키지의 상기 수용부에 수용되며 상기 메인 기판에 실장되며,
상기 반도체 패키지는,
패키지 기판;
상기 패키지 기판의 일면에 실장되는 적어도 하나의 전자 소자; 및
상기 전자 소자를 내부에 수용하며 상기 패키지 기판에 체결되는 차폐 실드;
를 포함하는 것을 특징으로 하는 반도체 패키지 모듈. - 제2항에 있어서, 상기 반도체 패키지의 상기 패키지 기판은,
내부에 적어도 하나의 상기 수용부가 형성되는 것을 특징으로 하는 반도체 패키지 모듈. - 제3항에 있어서, 상기 반도체 패키지는,
상기 패키지 기판과 상기 차폐 실드 사이의 공간을 밀봉하는 절연성의 몰드부를 더 포함하는 것을 특징으로 하는 반도체 패키지 모듈. - 제4항에 있어서, 상기 몰드부는,
상기 수용부를 확장하는 적어도 하나의 수용 홈을 구비하는 것을 특징으로 하는 반도체 패키지 모듈. - 제4항에 있어서, 상기 수용 홈은,
입구 부분이 상기 수용부와 동일한 형상으로 형성되는 것을 특징으로 하는 반도체 패키지 모듈. - 제2항에 있어서, 상기 대형 소자는,
상기 차폐 실드의 두께보다 두꺼운 크기로 형성되는 것을 특징으로 하는 반도체 패키지 모듈. - 제2항에 있어서, 상기 대형 소자는,
상기 메인 기판의 상부면에서 상기 반도체 패키지의 상부면 사이의 수직 거리보다 작은 높이로 형성되는 것을 특징으로 하는 반도체 패키지 모듈.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100107766A KR101153570B1 (ko) | 2010-11-01 | 2010-11-01 | 반도체 패키지 모듈 |
| US13/286,771 US8558377B2 (en) | 2010-11-01 | 2011-11-01 | Semiconductor package module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100107766A KR101153570B1 (ko) | 2010-11-01 | 2010-11-01 | 반도체 패키지 모듈 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20120045892A KR20120045892A (ko) | 2012-05-09 |
| KR101153570B1 true KR101153570B1 (ko) | 2012-06-11 |
Family
ID=45995766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020100107766A Expired - Fee Related KR101153570B1 (ko) | 2010-11-01 | 2010-11-01 | 반도체 패키지 모듈 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8558377B2 (ko) |
| KR (1) | KR101153570B1 (ko) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI497679B (zh) * | 2009-11-27 | 2015-08-21 | 日月光半導體製造股份有限公司 | 半導體封裝件及其製造方法 |
| US8569894B2 (en) | 2010-01-13 | 2013-10-29 | Advanced Semiconductor Engineering, Inc. | Semiconductor package with single sided substrate design and manufacturing methods thereof |
| TWI411075B (zh) | 2010-03-22 | 2013-10-01 | 日月光半導體製造股份有限公司 | 半導體封裝件及其製造方法 |
| US8941222B2 (en) | 2010-11-11 | 2015-01-27 | Advanced Semiconductor Engineering Inc. | Wafer level semiconductor package and manufacturing methods thereof |
| US9406658B2 (en) | 2010-12-17 | 2016-08-02 | Advanced Semiconductor Engineering, Inc. | Embedded component device and manufacturing methods thereof |
| KR20150053579A (ko) * | 2013-11-08 | 2015-05-18 | 삼성전기주식회사 | 전자 소자 모듈 및 그 제조 방법 |
| KR20160068506A (ko) | 2014-12-05 | 2016-06-15 | 삼성전기주식회사 | 센서 패키지 모듈 |
| KR20160100606A (ko) | 2015-02-16 | 2016-08-24 | 삼성전기주식회사 | 센서 패키지 모듈 |
| US9953931B1 (en) * | 2016-10-25 | 2018-04-24 | Advanced Semiconductor Engineering, Inc | Semiconductor device package and a method of manufacturing the same |
| US10797039B2 (en) | 2016-12-07 | 2020-10-06 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a 3D interposer system-in-package module |
| US10388637B2 (en) * | 2016-12-07 | 2019-08-20 | STATS ChipPAC Pte. Ltd. | Semiconductor device and method of forming a 3D interposer system-in-package module |
| KR102753506B1 (ko) * | 2022-12-19 | 2025-01-14 | 한화엔엑스엠디 주식회사 | 기판 장치 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005328009A (ja) | 2004-05-17 | 2005-11-24 | Sumitomo Electric Fine Polymer Inc | チップパッケージ、該チップパッケージの製造方法およびチップ実装基板 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5945741A (en) * | 1995-11-21 | 1999-08-31 | Sony Corporation | Semiconductor chip housing having a reinforcing plate |
| US6313522B1 (en) * | 1998-08-28 | 2001-11-06 | Micron Technology, Inc. | Semiconductor structure having stacked semiconductor devices |
| KR100740463B1 (ko) * | 2006-09-09 | 2007-07-18 | 주식회사 비에스이 | 실리콘 콘덴서 마이크로폰 |
| JP2010080679A (ja) | 2008-09-26 | 2010-04-08 | Kyocera Corp | 半導体装置の製造方法 |
-
2010
- 2010-11-01 KR KR1020100107766A patent/KR101153570B1/ko not_active Expired - Fee Related
-
2011
- 2011-11-01 US US13/286,771 patent/US8558377B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005328009A (ja) | 2004-05-17 | 2005-11-24 | Sumitomo Electric Fine Polymer Inc | チップパッケージ、該チップパッケージの製造方法およびチップ実装基板 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20120104572A1 (en) | 2012-05-03 |
| US8558377B2 (en) | 2013-10-15 |
| KR20120045892A (ko) | 2012-05-09 |
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