KR101050136B1 - 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 - Google Patents
유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 Download PDFInfo
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- KR101050136B1 KR101050136B1 KR1020060114273A KR20060114273A KR101050136B1 KR 101050136 B1 KR101050136 B1 KR 101050136B1 KR 1020060114273 A KR1020060114273 A KR 1020060114273A KR 20060114273 A KR20060114273 A KR 20060114273A KR 101050136 B1 KR101050136 B1 KR 101050136B1
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- cerium oxide
- oxide powder
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- C—CHEMISTRY; METALLURGY
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- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/10—Preparation or treatment, e.g. separation or purification
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/206—Compounds containing only rare earth metals as the metal element oxide or hydroxide being the only anion
- C01F17/224—Oxides or hydroxides of lanthanides
- C01F17/235—Cerium oxides or hydroxides
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C—CHEMISTRY; METALLURGY
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/76—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by a space-group or by other symmetry indications
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- C—CHEMISTRY; METALLURGY
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- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
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- Computer Hardware Design (AREA)
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- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
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Abstract
Description
| 구분 | 입경 | 비표면적 (m2/g) |
산화규소막 연마속도(Å/min) |
질화규소막 연마속도(Å/min) |
선택비 | 미세긁힘 |
| 실시예 1 | 1~3㎛ | 68 | 3644 | 88 | 41 | 없음 |
| 실시예 2 | 100~300 nm | 113 | 2800 | 65 | 43 | 없음 |
| 실시예 3 | 50~100 nm | 52 | 2650 | 62 | 43 | 없음 |
| 실시예 4 | 50~250 nm | 61 | 1426 | 27 | 52 | 없음 |
Claims (16)
- a)세륨의 전구체 용액과 침전제 용액을 혼합하여 반응시키는 단계; 및b)상기 반응 용액에 산화 처리를 하는 단계;를 포함하여 용액 상에서 직접 산화세륨 분말을 제조하는 방법으로서,물을 포함하지 않은 순수 유기용매 1종 이상을 상기 세륨 전구체 용액과 침전제 용액의 용매로 사용함으로써, 산화세륨 분말의 입경이 50 nm ~ 3 ㎛ 범위가 되도록 조절된 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 유기용매의 유전상수는 20 내지 50 범위인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 유기용매는 알코올(alcohol)류, 글리콜(glycol)류, 에테르(ether)류, 에스테르(ester)류, 케톤(Ketone)류, 및 포름산 (Formic acid)으로 구성된 군에서 선택된 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 세륨 전구체는 3가의 세륨 화합물인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 침전제는 NaOH, KOH, 및 NH4OH로 구성된 군에서 선택된 알칼리성 물질인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 b)단계의 산화 처리는 산화제를 첨가하거나, 또는 산소가 포함된 기체를 반응 용액 내로 블로윙(blowing)하는 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 a)단계 및 b)단계에서의 반응 온도는 30℃ 이상 용매의 끓는점 미만인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 a)단계 및 b)단계에서의 반응 시간은 30분 ~ 60시간 범위인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 세륨 전구체 용액의 농도는 0.01 ~ 2 mol 범위인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 세륨 전구체 용액과 침전제 용액의 농도비는 1 : 0.5 내지 1 : 5 인 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 생성된 산화세륨 분말을 300℃ ~ 350℃의 온도에서 10분 ~ 6시간 동안 열처리하는 단계를 더 포함하는 것이 특징인 산화세륨 분말의 제조방법.
- 제 1항에 있어서, 상기 산화세륨 분말의 비표면적이 50 m2/g ~ 200 m2/g 인 것이 특징인 산화세륨 분말의 제조방법.
- 삭제
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Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060114273A KR101050136B1 (ko) | 2006-11-20 | 2006-11-20 | 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 |
| PCT/KR2007/005815 WO2008062978A1 (en) | 2006-11-20 | 2007-11-20 | Method for preparing cerium oxide powder using organic solvent and cmp slurry comprising the same |
| US12/312,601 US8173039B2 (en) | 2006-11-20 | 2007-11-20 | Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same |
| CN2007800431180A CN101541912B (zh) | 2006-11-20 | 2007-11-20 | 采用有机溶剂制备二氧化铈粉末的方法以及包含该粉末的cmp浆料 |
| JP2009537088A JP5101626B2 (ja) | 2006-11-20 | 2007-11-20 | 有機溶媒を用いた酸化セリウム粉末の製造方法及びこの粉末を含むcmpスラリー |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060114273A KR101050136B1 (ko) | 2006-11-20 | 2006-11-20 | 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20080045326A KR20080045326A (ko) | 2008-05-23 |
| KR101050136B1 true KR101050136B1 (ko) | 2011-07-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020060114273A Expired - Fee Related KR101050136B1 (ko) | 2006-11-20 | 2006-11-20 | 유기용매를 이용한 산화세륨 분말의 제조방법 및 상기분말을 포함하는cmp슬러리 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8173039B2 (ko) |
| JP (1) | JP5101626B2 (ko) |
| KR (1) | KR101050136B1 (ko) |
| CN (1) | CN101541912B (ko) |
| WO (1) | WO2008062978A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230092596A (ko) * | 2021-12-17 | 2023-06-26 | 주식회사 케이씨텍 | 세륨계 연마입자 및 이의 제조방법 |
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| JP4981434B2 (ja) * | 2006-12-19 | 2012-07-18 | キヤノン株式会社 | トナー |
| JP2013126928A (ja) * | 2011-12-19 | 2013-06-27 | Shin-Etsu Chemical Co Ltd | 酸化セリウムの回収方法 |
| US8916061B2 (en) * | 2012-03-14 | 2014-12-23 | Cabot Microelectronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| UA102627C2 (uk) | 2012-03-20 | 2013-07-25 | Общество С Ограниченной Ответственностью "Наномедтраст" | Нанокомпозит оксид церію-алюмосилікатні трубки та спосіб його отримання |
| KR101512359B1 (ko) * | 2012-04-16 | 2015-04-15 | (주)디오 | 콜로이드 산화세륨 제조방법 |
| KR101396250B1 (ko) * | 2012-12-31 | 2014-05-19 | 주식회사 케이씨텍 | 세륨계 연마입자와 이를 포함하는 슬러리 및 그 제조 방법 |
| US8906252B1 (en) * | 2013-05-21 | 2014-12-09 | Cabot Microelelctronics Corporation | CMP compositions selective for oxide and nitride with high removal rate and low defectivity |
| KR102032758B1 (ko) * | 2013-08-05 | 2019-10-17 | 삼성전기주식회사 | 희토류 산화물의 제조방법 |
| JP6088953B2 (ja) * | 2013-09-24 | 2017-03-01 | 三井金属鉱業株式会社 | 研摩材スラリー及びそれを用いた基板の製造方法 |
| US9281210B2 (en) * | 2013-10-10 | 2016-03-08 | Cabot Microelectronics Corporation | Wet-process ceria compositions for polishing substrates, and methods related thereto |
| JP2015120844A (ja) * | 2013-12-24 | 2015-07-02 | 旭硝子株式会社 | 研磨剤の製造方法、研磨方法および半導体集積回路装置の製造方法 |
| KR101514945B1 (ko) * | 2014-07-07 | 2015-04-28 | (주)티에스엠 | 디에틸렌글리콜을 사용한 산화갈륨 나노입자의 제조방법 및 이로부터 제조된 산화갈륨 |
| JP6170027B2 (ja) * | 2014-10-09 | 2017-07-26 | 信越化学工業株式会社 | Cmp研磨剤及びその製造方法、並びに基板の研磨方法 |
| JP6393231B2 (ja) * | 2015-05-08 | 2018-09-19 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法 |
| CN104944458B (zh) * | 2015-06-10 | 2016-06-08 | 济南大学 | 一种水溶性铈前驱体制备多孔铈基氧化物方法 |
| JP6627283B2 (ja) * | 2015-06-30 | 2020-01-08 | 日立化成株式会社 | 研磨液及び研磨方法 |
| JP6618355B2 (ja) * | 2015-12-28 | 2019-12-11 | 花王株式会社 | 研磨液組成物 |
| US20190099927A1 (en) * | 2018-12-03 | 2019-04-04 | Zhenhuan LUO | Foaming method by effusing SCF through plastic granules |
| CN116710531A (zh) * | 2020-08-31 | 2023-09-05 | 秀博瑞殷株式公社 | 氧化铈粒子、包含其的化学机械研磨用浆料组合物以及半导体器件的制造方法 |
| KR102484635B1 (ko) * | 2020-08-31 | 2023-01-04 | 솔브레인 주식회사 | 산화 세륨 입자, 이를 포함하는 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조 방법 |
| CN114684844A (zh) * | 2020-12-25 | 2022-07-01 | 安集微电子(上海)有限公司 | 一种氧化铈的合成方法及其使用方法 |
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| CN1215981C (zh) * | 2003-03-21 | 2005-08-24 | 中国科学院生态环境研究中心 | 纳米二氧化铈的制备方法 |
| KR100682233B1 (ko) * | 2004-07-29 | 2007-02-12 | 주식회사 엘지화학 | 산화세륨 분말 및 그 제조방법 |
| CN100374374C (zh) * | 2005-08-28 | 2008-03-12 | 内蒙古科技大学 | 一种高比表面积纳米氧化铈的制备方法 |
| CN101268017A (zh) * | 2005-09-20 | 2008-09-17 | Lg化学株式会社 | 碳酸铈粉末及其制备方法、由该碳酸铈粉末制备的氧化铈粉末及其制备方法以及含该氧化铈粉末的cmp浆料 |
| CN100357362C (zh) * | 2005-12-26 | 2007-12-26 | 内蒙古科技大学 | 一种抛光用超细氧化铈的制备方法 |
-
2006
- 2006-11-20 KR KR1020060114273A patent/KR101050136B1/ko not_active Expired - Fee Related
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2007
- 2007-11-20 CN CN2007800431180A patent/CN101541912B/zh not_active Expired - Fee Related
- 2007-11-20 WO PCT/KR2007/005815 patent/WO2008062978A1/en not_active Ceased
- 2007-11-20 US US12/312,601 patent/US8173039B2/en active Active
- 2007-11-20 JP JP2009537088A patent/JP5101626B2/ja not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100417530B1 (ko) * | 2001-04-09 | 2004-02-05 | (주)케이.씨.텍 | 직경이 50-100㎚인 미세 산화세륨 입자의 제조방법 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230092596A (ko) * | 2021-12-17 | 2023-06-26 | 주식회사 케이씨텍 | 세륨계 연마입자 및 이의 제조방법 |
| KR102698222B1 (ko) * | 2021-12-17 | 2024-08-26 | 주식회사 케이씨텍 | 세륨계 연마입자 및 이의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008062978A1 (en) | 2008-05-29 |
| US20100044625A1 (en) | 2010-02-25 |
| JP5101626B2 (ja) | 2012-12-19 |
| CN101541912A (zh) | 2009-09-23 |
| JP2010510157A (ja) | 2010-04-02 |
| KR20080045326A (ko) | 2008-05-23 |
| US8173039B2 (en) | 2012-05-08 |
| CN101541912B (zh) | 2012-12-12 |
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