KR100709035B1 - 박막증착장치용 직접액체분사시스템 - Google Patents
박막증착장치용 직접액체분사시스템 Download PDFInfo
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- KR100709035B1 KR100709035B1 KR1020050115902A KR20050115902A KR100709035B1 KR 100709035 B1 KR100709035 B1 KR 100709035B1 KR 1020050115902 A KR1020050115902 A KR 1020050115902A KR 20050115902 A KR20050115902 A KR 20050115902A KR 100709035 B1 KR100709035 B1 KR 100709035B1
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- gas
- supply line
- reaction
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (2)
- 솔벤트로 희석된 액상반응원이 담겨진 캐니스터(111)와 연결되는 반응원공급라인(110);상기 캐리어가스가 공급되는 캐리어가스공급라인(120);상기 반응원공급라인(110)과 연결되는 제1유로(131)와, 상기 캐리어가스가 유입되는 제2유로(132)와, 상기 제1유로(131) 및 제2유로(132)와 연통되는 것으로서 유입되는 상기 액상반응원과 캐리어가스가 혼합되어 기액혼합유체로 되는 혼합실(133)과, 상기 제1유로(131)로 유입되는 액상반응원의 양을 제어하기 위하여 그 제1유로(131)를 개폐하는 제어밸브(134)를 가지는 기액혼합부(130);상기 기액혼합부(130)와 이격되게 이송라인(L)에 의하여 연결되는 것으로서, 상기 이송라인(L)에 의하여 이송되는 기액혼합유체를 미세방울로 변환한 후 기화시키는 기화부(140);상기 기화부(140)에서 발생된 반응가스를 챔버(C)로 이송시키기 위한 반응가스이송라인(150);상기 반응원공급라인(110)에 설치된 것으로서 그를 경유하는 액상반응원의 압력을 센싱하여 그 압력값에 대응되는 제1신호를 출력하는 제1센서(115);상기 캐리어가스공급라인(120)에 설치되는 것으로서 그를 경유하는 캐리어가스의 압력을 센싱하여 그 압력값에 대응되는 제2신호를 출력하는 제2센서(125);상기 반응가스이송라인(150)에 설치되는 것으로서 그를 경유하는 반응가스의 압력을 센싱하여 그 압력값에 대응되는 제3신호를 출력하는 제3센서(155);상기 제1센서(115)에서 출력된 제1신호와 상기 제2센서(125)에서 출력된 제2신호와 제3센서(155)에서 출력된 제3신호를 전송받은 후, 그 제1,2,3신호값과 상기 반응원공급라인(110), 캐리어가스공급라인(120) 및 반응가스이송라인(150)을 흐르는 유체의 기설정 압력값들을 상호 비교 및 연산함으로써, 제어밸브(134)를 제어하는 제어신호를 발생하는 제어부(160);를 포함하는 것을 특징으로 하는 직접액체분사시스템.
- 제1항에 있어서, 상기 제어밸브(134)는 상기 제어부(160)의 제어신호에 따라 제1유로(131)의 개방 면적을 가변함으로써, 상기 혼합실(133)로 공급되는 액상반응원의 공급량을 몇단계에 걸쳐 가변시킬 수 있는 공지의 조리개 가변형 밸브인 것을 특징으로 하는 직접액체분사시스템.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050115902A KR100709035B1 (ko) | 2005-11-30 | 2005-11-30 | 박막증착장치용 직접액체분사시스템 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050115902A KR100709035B1 (ko) | 2005-11-30 | 2005-11-30 | 박막증착장치용 직접액체분사시스템 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR100709035B1 true KR100709035B1 (ko) | 2007-04-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050115902A Expired - Fee Related KR100709035B1 (ko) | 2005-11-30 | 2005-11-30 | 박막증착장치용 직접액체분사시스템 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100709035B1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160110586A (ko) * | 2015-03-09 | 2016-09-22 | 주식회사 원익아이피에스 | 기판처리장치의 가스공급 제어방법 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010030282A (ko) * | 1999-09-09 | 2001-04-16 | 히가시 데쓰로 | 기화기 및 이것을 이용한 반도체 제조 시스템 |
-
2005
- 2005-11-30 KR KR1020050115902A patent/KR100709035B1/ko not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010030282A (ko) * | 1999-09-09 | 2001-04-16 | 히가시 데쓰로 | 기화기 및 이것을 이용한 반도체 제조 시스템 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160110586A (ko) * | 2015-03-09 | 2016-09-22 | 주식회사 원익아이피에스 | 기판처리장치의 가스공급 제어방법 |
| KR102070864B1 (ko) * | 2015-03-09 | 2020-01-30 | 주식회사 원익아이피에스 | 기판처리장치의 가스공급 제어방법 |
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