KR0152295B1 - Matrix Wiring Board - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide a matrix wiring board which can implement countermeasures against static electricity until the drive circuit is connected to the matrix wiring board, and enables the early inspection of the circuit wiring.

The matrix wiring board of the present invention is a matrix wiring board having circuit wiring formed in a matrix form on a substrate, and a guide ring connected to the circuit wiring is formed at an outer periphery of the circuit wiring so that the circuit wiring and the guide ring are separated from each other. The end part which controls the conduction of a guide ring is interposed.

According to the present invention, the circuit wiring and the guide ring are conducted by applying an exterior to the contact portion, whereby each wiring in the circuit wiring is short-circuited so that a potential difference due to static electricity does not occur between them, and thus no discharge occurs. This is improved.

Description

Matrix Wiring Board

1 is a circuit diagram of a matrix wiring organization of Embodiment 1. FIG.

2 is a circuit diagram of a matrix wiring board of Embodiment 2. FIG.

3 is a circuit diagram of a matrix wiring board of Example 3. FIG.

4 is a circuit diagram of a junction portion of the matrix wiring board of the fourth embodiment.

5 is a basic configuration diagram of a contact portion of the matrix wiring board of the fifth embodiment.

6 is a circuit diagram showing a specific circuit of the basic configuration diagram shown in FIG.

7 is an equivalent circuit diagram of the circuit shown in FIG.

8 is a configuration diagram showing a first transistor used in Example 5;

9 is a configuration diagram showing a second transistor used in Example 5;

10 is a circuit diagram of a matrix wiring board of a conventional example.

11 is a plan view showing a part of a structural example of an active matrix liquid crystal display device.

12 is a cross-sectional view along the line A-A of FIG.

Fig. 13 is an equivalent circuit diagram of a matrix wiring board of the sixth embodiment.

Fig. 14 is an equivalent circuit diagram of a matrix wiring board of the seventh embodiment.

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a matrix wiring board in which circuit wiring is formed in a matrix form, and in particular, to countermeasures against static electricity during its manufacture.

In recent years, the development of plant displays has been especially focused on visual devices. Among them, the liquid crystal display has many advantages, and therefore, it is more urgent to develop them as a display method to achieve mainstream in the future.

Among them, the active matrix liquid crystal display using a-SiTFT (amorphous silicon thin film transistor) is expected to become mainstream in the future because of its excellent display quality, and it is still being commercialized since it is relatively small.

On the other hand, an active matrix liquid crystal display first manufactures a matrix wiring substrate formed by forming a pixel electrode, a gate wiring, a source wiring, and a thin film transistor (TFT) formed in a matrix on a glass substrate as an insulator. It manufactures through the process of granulating and injecting a liquid crystal, and the connection process with a drive circuit.

At this time, in manufacturing the matrix wiring board, static electricity is likely to be generated between the electrodes. If static electricity is generated, the discharge destroys the insulator or the semiconductor of the TFT, for example, or the circuit wiring is damaged by the heat generation, which greatly degrades the yield as the wiring board. Among them, a-SiTFT is particularly weak against static electricity.

Therefore, conventionally, as disclosed in Japanese Patent Laid-Open No. 58-116573, a manufacturing method for implementing an antistatic measure by forming the guide ring 12 shown in FIG. 10 is employed.

In addition, after fabrication of the matrix wiring board 10, the outer periphery of the pixel region 14 is cut out for each glass substrate 24 using a cutting tool such as a diamond cutter, and the guide ring 12 is cut off and removed. The process proceeds to the process of assembling the manufactured wiring board and connecting the driving circuit.

11 and 12 show an example of the structure in which portions of the gate wiring 16, the source wiring 18, and the like are actually formed on a substrate in the conventional active matrix liquid crystal display shown in FIG.

However, the countermeasure against static electricity by the above method is effective when the guide ring 12 is formed, but in the subsequent process, since the guide ring 12 is cut off, it becomes unprotected against static electricity. (I.e., until the driving circuit is installed) also has a problem that the wiring board is likely to be damaged by the static electricity.

In particular, the problem of generating static electricity tends to occur frequently not only in the s-SiTFT forming process but also in the LCD assembly process, and it is a considerable problem that no electrostatic measures are taken during the assembly process.

In the electrostatic countermeasure by the above method, each source wiring 18 and the gate wiring 16 have the same potential, but it was uncertain whether the switching element 20 was switched on.

Therefore, when the pixel electrode 22 is charged, voltage is generated between the gate wiring 16 and the pixel electrode 22 and between the source wiring 18 and the pixel electrode 22, which causes the deterioration of the TFT.

In addition, even when the guide ring 12 is cut and removed, static electricity is easily generated between the glass substrate 24 and the cutting tool, and this static electricity also causes damage to circuit wiring.

In addition, since the source wiring 18 and the gate wiring 16 are short-circuited while the guide ring 12 is formed, the circuit wiring cannot be inspected, and the guide ring 12 is used for irradiation. Once the cut is removed, the guide ring 12 cannot be formed again, and the circuit wiring after the inspection is unprotected against the generation of static electricity, so that defects are likely to occur after the inspection, and the actual value of the inspection is damaged. Therefore, after the guide ring 12 was removed and the driving circuit was connected through the post-assembly process of the wiring board, etc., the inspection was performed. However, this method also has undergone many processes even if the circuit wiring is found to be defective. It is already difficult to cope with the problem, and since the defective products are disposed of, the manufacturing loss is so large that early inspection of the circuit wiring is absolutely necessary.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and the matrix wiring board and the matrix wiring board which allow the electrostatic countermeasure to be carried out until the driving circuit is connected to the matrix wiring board and, if possible, the inspection of the circuit wiring can be made early. It is to provide a manufacturing method.

The matrix wiring board according to claim 1, wherein in the matrix wiring board on which the circuit wiring is formed in a matrix form on the substrate, a guide ring connected to the circuit wiring is formed at an outer periphery of the circuit wiring, and between the circuit wiring and the guide ring. And a connection / disconnection portion (hereinafter referred to as a “contact portion”) for controlling the conduction of the circuit wiring and the guide ring.

The matrix wiring board according to claim 2, wherein the matrix wiring board according to claim 1 is a contact switching element for converting conduction / insulation between the circuit wiring and the guide ring, and a feeding part for controlling the contact switching element. It is characterized by being configured.

In the matrix wiring board according to claim 3, the terminal portion of the matrix wiring board according to claim 1 is composed of a variable resistance element or a variable resistance circuit.

A matrix wiring board according to claim 4, wherein the matrix wiring board is formed on a substrate, the circuit wiring having a source wiring and a gate wiring arranged on a matrix and a switching element formed at an intersection of the source wiring and the gate wiring. A guide ring connected to the circuit wiring is formed in the outer periphery of the wiring, and a mechanism controller for applying a voltage to the circuit wiring is formed in the guide ring.

In the present invention, in the various switching elements, the switching element in the conducting state is called a switching on state, and the switching element in the insulating state is called a switching off state.

In the matrix wiring board of the present invention, a guide ring is formed at the outer periphery of the circuit wiring, and a junction portion for controlling their conduction is formed between the circuit wiring and the guide ring.

By the formation of the guide ring which is connected to the circuit wiring, even if static electricity is generated in the circuit wiring, since each wiring is shorted by the guide ring, a potential difference does not occur and discharge by static electricity does not occur.

In addition, by forming a contact portion that can easily convert conduction / insulation between the circuit wiring and the guide ring, and insulating the circuit wiring and the guide ring with the connecting end, it is possible to obtain the same effect as removing the guide ring from the circuit wiring. In addition, since the circuit wiring and the guide ring can be brought back into a conductive state even after the insulating state is insulated, there is no need to cut and remove the guide ring.

Therefore, the inspection of the circuit wiring and the connection of the driving circuit can be performed without cutting off the guide ring. Therefore, inspection of the circuit wiring, which cannot be performed unless the guide ring is removed from the wiring board, can be performed as often as necessary. That is, during the inspection, the guide ring and the circuit wiring can be insulated from each other by the contact portion, and the guide ring and the circuit wiring can be conducted after the inspection.

Therefore, even after the inspection, if electrostatic countermeasures are required, electrostatic countermeasures can be always performed by conducting the guide ring and the circuit wiring.

In addition, the contact portion of the present invention is controlled by the exterior acting on the contact portion, so that the conduction / insulation of the circuit wiring and the guide ring can be converted very easily and accurately.

In addition, it is possible to use a terminal switching element controlled by a feeder acting by an outer sheath, a variable resistance element applied by an outer sheath, or a variable resistance circuit.

On the other hand, in the transmissive liquid crystal display device on the premise of using a backlight, the light of the backlight of the liquid crystal display device can be used as the exterior.

In addition, by forming a guide ring on the outer periphery of the circuit wiring, and at the same time, by forming an electromotive force controller having electromotive force in the guide ring, the mechanism controller can apply an appropriate voltage to the circuit wiring. Therefore, the switching of the switch element formed in the circuit wiring can reduce the resistance, and the switching element can be reliably turned on. Therefore, charging of the pixel electrode can be prevented and deterioration of the switching element can be prevented.

EXAMPLE

Although the present invention will be described below with examples, the present invention is not limited to these examples.

Example 1

Embodiment 1 describes a matrix wiring board with reference to FIG.

In the matrix wiring board 26 shown in FIG. 1, the circuit wiring in the pixel region 14 is well known for use in an active matrix liquid crystal display panel, and a plurality of minority wirings 18 for transmitting data signals are shown. 18,... And a plurality of gate wirings 16, 16,... For transmitting a scanning signal are formed on the glass substrate 24 in a matrix (matrix) state, and the plurality of source wirings 18 and the gate wiring ( 16, pixel electrodes 22, 22, ... are formed, and each pixel electrode 22 passes through a switching element (thin film transistor; TFT) 20, 20, ..., source wiring 18 and gate wiring. It is comprised so that it may be connected to (16).

Further, in the wiring substrate of an active matrix liquid crystal display, various various structures are known in terms of the wiring structure, the pixel electrode structure, the structure of the switching element, etc., but any type of structure may be used if the matrix wiring substrate is used. Since the present invention can be applied, the present invention has no particular relationship with the structure of the active matrix liquid crystal display in the pixel region 14.

In the matrix wiring board 26 of this embodiment, the guide ring 12 is formed in the outer periphery of the pixel region 14. The guide ring 12 is made of a conductor and is connected to the circuit wiring in the pixel region 14, that is, the gate wiring 16 and the source wiring 18.

In the matrix wiring board 26 of the present embodiment, the contact portions 32, 32, ... are formed in the wiring for connecting the circuit wiring in the pixel region 14 and the guide ring 12. As shown in FIG.

Moreover, the contact part 32 is comprised from the contact switching element 30 and the power supply part 28. As shown in FIG.

The contact switching element 30 preferably has a function of converting conduction and insulation between the circuit wiring and the guide ring 12. In the matrix wiring substrate 26 shown in FIG. 1, the contact switching element 30 is a thin film. It consists of a transistor (TFT).

The power feeding section 28 controls the conduction / insulation of the switching device 30, and a solar cell is applied to the matrix wiring board 26 shown in FIG.

Accordingly, by irradiating light to the power supply unit 28, which is a solar cell, electromotive force is generated in the power supply unit 28, and the terminal switching element 30 is switched on, so that the circuit wiring and the guide ring 12 are in a conductive state. . When the irradiation of light to the power supply unit 28 is stopped, the terminal switching element 30 is switched off, and the circuit wiring and the guide ring 12 are insulated.

The solar cell applied to the power feeding unit 28 uses homojunction (n ⁺ -a-Si / ia-Si, n ⁺ -a-Si / ia-Si / P using a-Si equivalent to TFT). ⁺ -a-Si etc.) Heterojunction, a contact forming a schottky barrier, etc. can be manufactured, and sufficient electromotive force can be obtained by connecting a solar cell in series as needed.

The power supply unit 28 may control the contact switching element 30. In addition to the solar cell, for example, a coil generates an electromotive force by electromagnetic induction by using a coil, and controls the contact switching element 30. By generating an electromotive force to control the contact switching device 30, the control of the contact switching device 30 by using the thermoelectric power, such as to generate the electromotive force by the external control can control the contact switching device 30. It can be anything if it exists.

In addition, the power supply unit 28 can arbitrarily set a voltage (for example, V _on ≥ 2 V and V _off ≤ 1 V) necessary for converting the switching state (on or off) of the contact switching element 30. It is preferable that it is an element or a circuit which can hold | maintain 10 minutes-several hours. For example, a latch circuit used for a static RAM or the like may be used.

As the power feeding unit 28, a capacitor having a small link and a large capacity can also be used. In this case, when the circuit wiring and the guide ring 12 are insulated, it is preferable to discharge the capacitor. When the terminal switching element 30 is switched on, the capacitor is stored when the circuit wiring and the guide ring 12 are conducted. It is preferable to make it.

As the capacitor, in combination with the amplifier, the apparent capacity may be increased by using the mirror effect. In this case, the capacity of the amplifier is also increased by twice.

The circuit wiring and the guide ring 12 of the matrix wiring board 26 are formed on the glass substrate 24 by the sputtering method, the electron beam deposition method, or the like, which are conductors Ta, Mo, Al, Cu, and the like. It can manufacture by forming in a desired pattern.

In the matrix wiring engine 26 of the embodiment, during manufacture (until the drive circuit is connected to the circuit wiring), the exterior is applied to the power supply unit 28 to generate electromotive force at the power supply unit 28, that is, the power supply unit 28. If a solar cell is used, the circuit cell and the guide ring 12 can be made to conduct by irradiating light to the solar cell to generate an electromotive force, thereby bringing the terminal switching element 30 into a switched on state.

Since the source wiring 18 and the gate wiring 16 are short-circuited by making the circuit wiring and the guide ring 12 conduct, the potential difference due to static electricity is not generated between them, resulting in coin phase. Therefore, discharge does not occur, the insulator or the semiconductor of the pixel TFT is destroyed, and the circuit wiring is not damaged by the heat generated by the discharge, and the yield as a wiring board is greatly improved.

When the drive circuits (not shown) are connected to the drive circuit connection terminals 34, 35, ..., and there is no need to take countermeasures against static electricity, the power supply unit (solar cell) 28 is shielded or destroyed (sun). The terminal switching element 30 is switched off by setting the electromotive force to be less than or equal to the TFT of the terminal switching element 30 so as not to generate an electromotive force such as covering the battery with something or attaching a tape. The circuit wiring and the guide ring 12 can be insulated. As the circuit wiring and the guide ring 12 are insulated, the circuit wiring is driven only by the driving circuit.

Therefore, in the matrix wiring board of the present invention, it is not necessary to cut and remove the guide ring 12 from the circuit wiring. Therefore, the guide ring 12 can be kept connected from the time of manufacture of the circuit wiring to the connection of the drive circuit, and the antistatic measures can be maintained and ensured until the connection of the drive circuit requiring the antistatic measures.

In addition, since the guide ring 12 is not cut off, the present invention does not receive damage caused by static electricity, which frequently occurs in the substrate and the cutting section at the time of cutting.

Therefore, the yield with respect to a product improves significantly compared with the past.

In addition, since the conduction / insulation between the guide ring 12 and the circuit wiring can be arbitrarily repeated until the power feeding section 28 is destroyed, the circuit wiring and the guide ring 12 are insulated from each other to inspect the circuit wiring. Afterwards, the circuit wiring and the guide ring can be conducted again. Therefore, since the circuit wiring can be inspected at any time, the circuit wiring can be inspected at an early stage. Therefore, since the defect of circuit wiring can be detected early, manufacture loss can be considerably suppressed.

In addition, in the present embodiment, an active matrix liquid crystal display using TFTs is illustrated, but the present invention is not limited thereto, but an active matrix liquid crystal display using a MIM, a liquid crystal display using a simple matrix system, and various slat displays (EL, etc.). Of course, the present invention can be applied to various matrix wiring boards such as various sensor arrays (image sensor array, pressure sensor array, etc.).

Example 2

The matrix wiring board of Example 2 will be described with reference to FIG.

The matrix wiring board 36 shown in FIG. 2 differs from the matrix wiring board 26 in Embodiment 1 by collecting and connecting the gate electrodes of the contact switching elements 30, 30, ..., which are made of a plurality of thin film transistors. The feeding part 28 is formed between the directly connected gate electrode and the guide ring 12. That is, in the matrix wiring board 36 of the second embodiment, the contact portion 32 is composed of a plurality of contact switching elements 30, 30,... And one power supply portion 28.

According to the matrix wiring board 36 of the second embodiment, only one spot may be irradiated / shielded to irradiate or block light to the solar cell which is the feed section 28, and the feed section 28 is more easily and surely. You can control it.

Other operations, configurations, and effects are equivalent to the matrix wiring board 26 of the first embodiment.

In this embodiment, the entire switching switching elements 30, 30, ... are driven by one power feeding unit 28, but the gate electrodes of the switching elements 30 connected to the source wiring 18 are collected. A power supply unit may be provided in each of the gate electrodes of the switching elements 30 connected to the gate wiring 16.

Example 3

The matrix wiring board of Example 3 is explained with reference to FIG.

The matrix wiring board 38 shown in FIG. 3 differs from the matrix wiring board 26 of the first embodiment in that the variable resistance elements 40, 40, ... are used as the contact portions.

The variable resistance element 40 may be one in which the electrical resistance thereof is changed by an exterior, for example, a photoconductive element in which the resistance is changed by light, a dummyster in which the resistance is changed by temperature, or the resistance is changed by pressure. Piezoresistive elements, distortion gauges, or the like may be used as the element where the resistance value changes due to the magnetic field.

If the variable resistive element 40 as the upper limit of the variation range (the high resistance side) R _v ≥10 ⁵ Ω of resistance of no problem for a normal display.

However, depending on the capability of the drive circuit at the time of mounting, a value smaller than this may be sufficient.

The lower limit (low resistance value side) may be R _v ≤ 10 ³ Pa, and the lower the value, the more preferable the charge rate is.

In the matrix wiring substrate 38, in order to conduct the circuit wiring and the guide ring 12, the resistance of the variable resistance element 40 may be reduced.

When the drive circuits (not shown) are connected to the drive circuit connecting terminals 34, 34, ..., and there is no need for countermeasures against static electricity, the photoconductive element 40 is shielded (something is applied to the photoconductive element). It is sufficient to insulate the circuit wiring and the guide ring 12 by increasing the resistance value.

Example 4

As the matrix wiring board of the fourth embodiment, the variable resistance circuit 42 as shown in FIG. 4 is applied instead of the variable resistance element 40 of the third embodiment. Therefore, the schematic diagram of the entire matrix wiring board is shown in FIG.

In Figure 4,

Ro: constant resistance of the resistor 44

Rv: resistance value of the variable resistance element 46 (variable resistance elements applied in Example 3 can be applied to this variable resistance element) varying from RL to RH (Ro ≒ RL, RoRH) by the exterior.

Tr: transistor (where R onRo, R off ≥ RHRo, where R on is the resistance in the switching on state of the transistor, R off is the resistance in the switching off state of the transistor)

VR: dislocation of the guide ring

Vx: Gate potential of transistor at the same time as contact point of Ro and Rv

Vs: potential of circuit wiring

In the matrix wiring board of the fourth embodiment, when conducting electrostatic protection, that is, to conduct the circuit wiring and the guide ring 12, the resistance value as the entire variable resistance circuit 42 may be lowered to decrease the difference between Vs and VR. .

In this case, first, the resistance value RV of the variable resistance element 46 is set to RV = RL ≒ Ro by the exterior.

However, it becomes Vx + (VR + Vs) / 2.

When Vs is charged to-against VR due to static electricity, if Tr is a channel FET (Field Effect Transistor), Vs is the source potential, and the gate source voltage (Vgs) of transistor Tr is Vgs = Vx-Vs ≒ (VR-Vs) / 2

When Vgs becomes Vgs ≒ (VR-Vs) / 2≥Vth with respect to the threshold voltage Vth (formula V) of the transistor Tr, the transistor Tr is switched on, and the guide ring 12 and the circuit wiring Liver resistance (R)

Therefore, the resistance value R as the whole of the variable resistance circuit 42 is greatly reduced, so that the static elimination speed can be significantly increased.

Similarly, when the transistor Tr is a channel FET and Vs is positively charged with respect to VR, VR becomes the source potential, and Vgs of the transistor Tr is Vgs = Vx-VR ≒ (Vs-VR) / 2.

When Vgs becomes Vgs ≒ (Vs−VR) / 2 ≧ Vth with respect to Vth, the transistor Tr is switched on and becomes R ≒ Ron. Therefore, the resistance value R as the whole of the variable resistance circuit 42 is greatly reduced, so that the static elimination speed can be significantly increased.

In the case where the transistor Tr is p-channel, the same effect can be obtained by judging the source potential by the sign of the charge potential of Vs relative to VR as opposed to the case of the n-channel described above.

In order to insulate the circuit wiring from the guide ring 12 during the inspection of the circuit wiring or the driving of the circuit wiring, the resistance value R as the whole of the variable resistance circuit 42 may be increased. To this end, the resistance value Rv of the variable resistance element 46 is set to Rv = RH Ro by the exterior.

This is Vx VVR because it is RvRo.

When the range of the potential applied to the circuit wiring for inspection or driving of the circuit wiring is expressed as VsL ≦ Vs ≦ VsH, the transistor Tr is reliably maintained in the switching-off state as shown below for Vs. Done.

① VRVsL when transistor Tr is n-channel FET

② When the transistor Tr is a p-channel FET, VRVsH

When the transistor Tr is switched off, the resistance value R between the circuit wiring and the guide ring 12 becomes R = RH + Ro? RH.

This resistance value R depends on the capability of the drive circuit, but is generally good if it is 10 ⁵ kHz or more.

Example 5

The basic configuration of the circuit of the matrix wiring board of the fifth embodiment will be described with reference to FIG.

5 shows the basic configuration of the variable resistance circuit of the circuit according to the fifth embodiment, wherein the circuit according to this embodiment is connected to the connection wiring 71 connected to the guide rings 12 described in the previous embodiment, respectively. The main transistor (Tro) is provided between the gate wiring 16 or the connection wiring 70 connected to the source wiring 18 described in the embodiment, and the resistance value of the main transistor Tro is reduced by exposure. The variable resistance element 72 (resistance value R1) and the resistance 73 (resistance value R2) are connected.

In this circuit, the voltage across the variable resistor element 72 is V1, the voltage across the resistor 73 is V2, and the load is connected to the main transistor Tro via the wiring 70 and 71 by the generation of static electricity. If the voltage to be referred to as Vse is set to R1? Rse in the manufacturing process of the wiring board, V1? Vse / 2. Here, Vse V2 when 2Vt (Vt = threshold of main transistor (Tro)) Vt is discharged because the main transistor (Tro) is turned on. In this configuration, the circuit wiring is protected from static electricity by always operating regardless of + and-of Vse.

Next, when the liquid crystal display device to which this circuit is applied is of a type using a backlight, when the liquid crystal is displayed by the device, the resistance value decreases when the light of the backlight is irradiated onto the variable resistance element 72 so that the relationship of R2R1 is reduced. In relation to Vse ≒ V2V1 ≒ 0. Therefore, if the potential VO of the guide ring 12 is set to the most negative voltage in the circuit, the main transistor Tro (channel TFT) remains off, which does not affect the display of the liquid crystal display device. Power consumption can also be suppressed small.

Therefore, in either of the variable resistance element 72 and the resistor 73, it may be said that the higher the resistance value is, the larger the resistance value is for the liquid crystal display. In order to manufacture the resistor 73, it is practically preferable to use the off resistance of the thin film transistor.

In view of such facts, the configuration shown in Fig. 6 can be adopted as the configuration most suitable for use in the liquid crystal display device.

The configuration shown in FIG. 6 is formed by connecting the first transistor Tr ₁ and the second transistor Tr ₂ to the main transistor Tro, and the equivalent circuit of the circuit shown in FIG. 6 is shown in FIG. Is shown in. In the equivalent circuit shown in FIG. 7, the resistor 74 and the diode D ₂ and the first transistor Tr ₁ having the off resistance of the second transistor Tr ₂ as Roff ₂ with respect to the main transistor Tr ₀ . The variable resistance element 75 and diode D ₁ having the off resistance of Roff ₁ are connected to each other.

In this equivalent circuit, when the guide ring 12 is set to the most negative voltage, the diodes D ₁ and D ₂ become reverse biased, so that current flows through the resistor 74 and the variable resistance element 75. The gate voltage of the main transistor Tr ₀ is determined at the resistance ratio Roff ₂ / Roff ₁ . Here, when the ₂ Roff Roff ₁ by the backlight light gate-source voltage of the main transistor (Tr ₀₎ is the V _GS 0 ≒ main transistor (Tr ₀₎ is maintained in an OFF state.

In view of the above facts, the first transistor Tr ₁ and the second transistor Tr ₂ shown in FIG. 6 are Roff ₂ Roff ₁ (Roff ₂ and Roff ₁ are the first transistors, respectively). Tr ₁ ) and off resistances of the second transistor Tr ₂ ). In order to make this situation concrete by light, it is possible to use a backlight as described above in the case of a transmissive liquid crystal display. An example of a structure in which the first transistor Tr ₁ and the second transistor Tr ₂ are specifically provided in the transmissive liquid crystal display device is shown in FIGS. 8 and 9.

The first transistor Tr ₁ shown in FIG. 8 forms a gate electrode 80 made of a transparent conductive film such as ITO on the substrate 50, and forms the gate insulating film 51 between the substrate 50 and the gate electrode 80. ), The semiconductor layer 55 is laminated thereon, an ion-doped semiconductor layer 55a is formed on the semiconductor layer 55, and a part thereof is removed by etching, and the drain electrode 56 'and By forming the source electrode 57 ', a channel H type thin film transistor structure is used as the switching element.

Ninth turns the second transistor shows an example of a specific structure of (Tr _2), when the second transistor (Tr ₂₎ having such a structure using the process for producing a liquid crystal substrate of the structure shown in claim 12, also the second transistor ( Tr ₂ ) can be formed.

The first transistor Tr ₁ shown in FIG. 9 forms a gate electrode 81 made of a light-shielding conductive film such as metal on the substrate 50 to form the gate insulating film ( 51, a semiconductor layer 55 is stacked thereon, an ion-doped semiconductor layer 55a is formed on the semiconductor layer 55, and a part of the semiconductor layer 55 is removed by etching, and the drain electrode 56 and the source are removed. The electrode 57 is formed to form an channel element type thin film transistor structure as an etching element. Also in the case of manufacturing the second transistor Tr2 of this example, it can be manufactured using the process of forming the switching element 53 similarly to the case of the first transistor Tr ₁ described above.

Also in the case of employing the switching element structures shown in FIG. 8 and FIG. 9, it is necessary to form the main transistor Tr ₀ on the substrate 50 by adopting such a structure, and at this time, the main transistor In the case of (Tr ₀ ), the liquid crystal display is turned off. However, in order not to increase the burden on the driving circuit of the liquid crystal, Roff ₀ (off resistance of the main transistor Tr ₀ ) is preferably larger.

For this purpose, since the backlight is incident on the reference transistor Tr ₀ and the off resistance must be suppressed during display, the gate electrode is made of a light shielding conductive film such as the second transistor Tr ₂ shown in FIG. Good to configure. Therefore, the main transistor Tr ₀ can be obtained by the configuration as shown in FIG.

And usually there is according to the purpose to stop the incident light from the upper surface side as called an light-shielding film light when the yield (light shield) that covers the upper portion of the thin film transistor configuration of a liquid crystal display device, the Roff ₀ for the main transistor (Tr ₀₎ Since there is an effect to enlarge, it is also useful to apply this light shielding film to the said structure.

Example 6

The matrix wiring board of Example 6 will be described with reference to FIG.

In the matrix wiring board 26 shown in FIG. 13, a first guide ring 94 and a second guide ring 95 are formed in the outer periphery of the pixel region 14. The first guide ring 94 and the second guide ring 95 are made of a conductor, and the guide rings 94 and 95 are connected to the circuit wiring 91 in the pixel region 14, that is, the first guide ring 94. ) Is connected to the source wiring 18 and the second guide ring 95 to the gate wiring 16, respectively.

In addition, the first guide ring 94 and the second guide ring 95 are connected via a mechanism controller 93.

The electromechanical controller 93 may be used to generate a voltage for the switching element 20 to be in a switched-on state. For example, a solar cell in which electromotive force is generated by irradiation of light can be applied.

The electromechanical controller 93 may be applied to generate various electromotive force illustrated as the power supply unit 28 of the first embodiment in addition to the solar cell.

When antistatic measures are required, electromotive force is generated by the electromechanical controller 93 (for example, when a solar cell is applied as the electromechanical controller 93, the electromotive force is generated by irradiating light to the solar cell). The voltage is applied to the source wiring 18 and the gate wiring 16 from 93 so that the switching element 20 can be turned on. Therefore, even if static electricity is generated, the pixel electrode does not charge and the switching element 20 due to the electrostatic charge does not deteriorate.

In particular, in the matrix wiring board 26 of the present embodiment in which the electromechanical controller 93 is formed, since the voltage is actively applied to the switching element 20, the switching-on resistance of the TFT of the switching element 20 can be reduced. Therefore, the switching element 20 can be reliably switched on.

Example 7

The matrix wiring board of Example 7 will be described with reference to FIG.

The matrix wiring board 36 shown in FIG. 14 differs from the matrix wiring board 26 of the sixth embodiment by forming the contact portions 32 and 32 between the circuit wiring 91 and the guide rings 94 and 95. have.

The contact portion 32 is composed of the contact switching element 30 and the electromotive element 92.

The contact switching element 30 may have a function of converting conduction and insulation between the circuit wiring 91 and the guide rings 94 and 95. In the matrix wiring board 36 shown in FIG. 14, the contact switching element ( 30 is composed of a thin film transistor (TFT).

The electromechanical element 92 controls conversion of conduction / insulation of the step switching element 30. A solar cell is applied to the matrix wiring board 36 shown in FIG.

According to this structure, the matrix wiring board which also has the function and effect which can be obtained by the said Example 2 and Example 6 can be obtained.

Further, the gate electrodes of the contact switching elements 30, 30, ... composed of a plurality of thin film transistors may be collected in series, and one electromechanical element may be formed between the directly connected gate electrode and the guide ring 94.

By having one electromechanical element, the exterior can be easily and reliably applied to the electromechanical element.

The matrix wiring board of the present invention is formed on the substrate by a circuit wiring, a guide ring connected to the circuit wiring, and a contact portion for controlling the conduction / insulation of the circuit wiring and the guide ring. By controlling the external sheath, the circuit wiring and the guide ring are kept conductive.

By connecting the circuit wiring and the guide ring with each other, the respective wirings in the circuit wiring are short-circuited, so that a potential difference due to static electricity is not generated therebetween, resulting in coin phase. As a result, discharge does not occur, the insulator or semiconductor of the pixel TFT is destroyed, or the circuit wiring is not damaged due to the heat generated by the discharge, and the yield as a wiring board is greatly improved.

In addition, when the drive circuit is no longer required to take countermeasures against static electricity, the exterior of the contact portion is controlled to insulate the circuit wiring and the guide ring. Since the circuit wiring and the guide ring are insulated, the circuit wiring is driven faithfully to the signal from the driving circuit.

Therefore, in the matrix wiring board of the present invention, it is not necessary to cut and remove the guide ring from the circuit wiring. Therefore, the guide ring can be kept connected from the time of manufacture of the circuit wiring to the connection of the drive circuit, and the antistatic measures can be maintained and maintained until the connection of the drive circuit requiring the countermeasure against static electricity.

In addition, since the guide ring is not cut off, conventionally, the present invention does not receive damage caused by static electricity generated in the substrate and the cutting section during cutting.

Therefore, the yield is greatly improved as compared with the conventional one.

In addition, since the conduction / insulation of the guide ring and the circuit wiring can be repeatedly performed, the circuit wiring and the guide ring can be conducted again after the circuit wiring and the guide ring are insulated and the circuit wiring is inspected. Therefore, the inspection of the circuit wiring can be performed at any time, so that the inspection of the circuit wiring at an early stage can be performed. Therefore, since the defect of circuit wiring can be detected early, manufacture loss can be suppressed considerably.

In the manufacturing process, since the circuit wiring arranged on the matrix is connected to each other, the potential difference does not occur even if static electricity is generated, so that no discharge occurs between the wirings, and the pixel thin film transistor, the insulating film and the circuit wiring are damaged. This doesn't happen. Further, when applied to an active matrix liquid crystal display device, since the thin film transistor can be used as a contact element, the present invention structure can be adopted without increasing the process. In addition, when applied to a transmissive liquid crystal display device, since the light of the backlight can be used as an exterior, it is possible to take countermeasures against static electricity without increasing the cost of the product. Contribute.

In addition, when the guide ring is formed on the outer periphery of the circuit wiring and the electromechanical controller having electromotive force is formed at the same time, the switching device is reliably switched on by applying an appropriate voltage to the circuit wiring with the electromechanical controller. Since the charging of the pixel electrode can be prevented even when static electricity is generated, sufficient antistatic measures can be taken to prevent the deterioration of the switching element.

Claims (4)

In a matrix wiring board in which circuit wiring is formed in a matrix form on a substrate, a guide ring connected to the circuit wiring is formed at an outer periphery of the circuit wiring, and conduction between the circuit wiring and the guide ring is conducted between the circuit wiring and the guide ring. The matrix wiring board, characterized in that the connection portion for controlling the interposition. 2. The matrix wiring board according to claim 1, wherein the contact section comprises a contact switching element for converting conduction / insulation between the circuit wiring and the guide ring, and a feed section for controlling the contact switching element. The matrix wiring board according to claim 1, wherein the contact portion is constituted by a variable resistance element or a variable resistance circuit. A matrix wiring board having a source wiring and a gate wiring arranged in a matrix form and a circuit wiring having a switching element formed at an intersection of the source wiring and the gate wiring, wherein the circuit wiring and the peripheral portion of the circuit wiring are formed on the substrate. A guide ring to be connected is formed, and a matrix controller for applying a voltage to the circuit wiring is formed in the guide ring.