KR0144021B1 - Contact hole embedding method using tungsten bonding layer - Google Patents
Contact hole embedding method using tungsten bonding layerInfo
- Publication number
- KR0144021B1 KR0144021B1 KR1019950003736A KR19950003736A KR0144021B1 KR 0144021 B1 KR0144021 B1 KR 0144021B1 KR 1019950003736 A KR1019950003736 A KR 1019950003736A KR 19950003736 A KR19950003736 A KR 19950003736A KR 0144021 B1 KR0144021 B1 KR 0144021B1
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- South Korea
- Prior art keywords
- film
- tungsten
- bonding layer
- contact hole
- aluminum
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 양호한 층덮힘 특성을 갖는 텅스텐 접합층을 이용한 콘택홀 매립 방법에 관한 것으로, 금속원자의 확산을 방지하는 확산장벽막을 형성하는 단계 : 상기 확산장벽막 상부에 접합층으로 텅스텐막을 형성하는 단계 ; 알루미늄막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.The present invention relates to a method for filling a contact hole using a tungsten bonding layer having good layer covering properties, the method comprising: forming a diffusion barrier film to prevent diffusion of metal atoms; forming a tungsten film as a bonding layer on the diffusion barrier film; ; It characterized by comprising the step of forming an aluminum film.
Description
제 1 도는 종래방법에 따른 콘택홀 매립 후의 단면도,1 is a cross-sectional view after filling the contact hole according to the conventional method,
제 2a 도 및 제 2b 도는 본 발명의 일실시예에 따른 콘택홀 매립 과정을 나타내는 단면도,2a and 2b is a cross-sectional view showing a contact hole filling process according to an embodiment of the present invention,
제 3 도는 본 발명의 다른 실시예에 따른 콘택홀 매립 과정을 나타내는 단면도.3 is a cross-sectional view showing a contact hole filling process according to another embodiment of the present invention.
* 도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings
20, 30 : 산화막 21, 31 : 티타늄막20, 30: oxide film 21, 31: titanium film
22, 32 : 질화티타늄막 25 : 알루미늄막22, 32: titanium nitride film 25: aluminum film
27 : 화학기상증착법에 의한 텅스텐 접합층27: tungsten bonding layer by chemical vapor deposition
28, 38 : WAl12석출물 39 : 스퍼터링에 의한 텅스텐막28, 38: WAl 12 precipitate 39: tungsten film by sputtering
본 발명은 반도체 소자 제조공정중 콘택홀 매립방법에 관한 것으로, 특히 256M D램급 이상의 미세한 콘택 홀을 매립하기 위한 텅스텐접합층을 이용한 콘택홀 매립 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of filling a contact hole in a semiconductor device manufacturing process, and more particularly, to a method of filling a contact hole using a tungsten bonding layer for filling a fine contact hole of 256M DRAM or more.
제 1 도는 종래의 스퍼터링 방법에 의한 티타늄 접합층을 이용하여 홀을 매립시키는 방법을 나타내는 도면으로, 산화학(10)의 홀 내에 확산방지막으르 티타늄막(1), 질화티타늄막(2)을 증착하고 그 위에 스퍼터링으로 티타늄막(3)을 증착한 후 알루미늄막(5)을 형성한다.FIG. 1 is a view showing a method of filling a hole using a titanium bonding layer by a conventional sputtering method, and depositing a titanium film (1) and a titanium nitride film (2) with a diffusion barrier film in a hole of oxidization (10). After the deposition of the titanium film 3 by sputtering on it to form an aluminum film (5).
그러나 상기 종래 방법으로는 미세한 콘택홀 내에서의 층덮힘이 불량하여 고온의 알루미늄막 증착으로도 홀 매립이 완전히 이루어지지 않고 동공(void, 6)이 유발되게 되고, 이러한 층덮힘 불량을 개선시키기 위해서는 클리메이터를 이용한 티타늄 스퍼터링 공정을 추가로 진행해야 하는 문제점이 따랐다.However, in the conventional method, the layer covering in the fine contact hole is poor, so that the hole (void) 6 is caused without hole filling even by high temperature aluminum film deposition. Titanium sputtering process using the climator followed a problem to proceed further.
상기와 같은 종래기슬의 문제점을 해결하기 위하여 안출된 본 발명은 양호한 층덮힘 특성을 갖는 텅스텐 접합층을 이용한 콘택홀 매립 방법을 제공하는데 그 목적이 있다.The present invention devised to solve the problems of the conventional gas as described above has an object of providing a contact hole filling method using a tungsten bonding layer having a good layer covering properties.
상기 목적을 달성하기 위하여 본 발명은 반도체 소자 제조공정중 소자간의 전기적 연결을 위한 콘택홀 매립 방법에 있어서, 금속원자의 확산을 방지하는 확산장벽막을 형성하는 단계 : 상기 확단장벽막 상부에 접합층으로 텅스텐막을 형성하는 단계 : 알루미늄막을 형성하는 단계를 포함하여 이루어지는 것을 특징으로 한다.In order to achieve the above object, the present invention provides a contact hole filling method for electrical connection between devices in a semiconductor device manufacturing process, the method comprising: forming a diffusion barrier to prevent the diffusion of metal atoms as a bonding layer on the expansion barrier film; Forming a tungsten film: characterized in that it comprises a step of forming an aluminum film.
이하, 첨부된 도면을 참조하여 본 발명을 상술한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
본 발명에서의 텅스텐 접합층을 이용한 미세 콘택 매립 방법에는 2가지가 있는데, 제 2a 도 및 제 2b 도는 화학기상증착에 의한 텅스텐 증착방법을 나타내며, 제 3 도는 스퍼터링에 의한 텅스텐 접합층을 이용하는 방법을 나타낸다.In the present invention, there are two methods for filling a fine contact using a tungsten bonding layer. FIGS. 2a and 2b show a tungsten deposition method by chemical vapor deposition, and FIG. 3 shows a method using a tungsten bond layer by sputtering. Indicates.
먼저, 화학기상증착에 의한 텅스텐 접합층 형성방법을 설명하면, 제 2a 도에 도시된 바와 같이 산화막(20)의 홀 내에 티타늄막(21), 질화티타늄막(22)을 증착한 다음, 화학기상증착법으로 텅스텐 접합층(27)을 얇게 형성한다. 이때, 홀 내에서의 층덮힘이 우수함을 알 수 있다.First, a method of forming a tungsten junction layer by chemical vapor deposition will be described. As shown in FIG. 2A, the titanium film 21 and the titanium nitride film 22 are deposited in the holes of the oxide film 20. The tungsten junction layer 27 is thinly formed by vapor deposition. At this time, it can be seen that the layer covering in the hole is excellent.
이어서, 고온(500 내지 525℃)의 알루미늄 증착공정으로 홀 매립을 진행하면 제 25 도에서와 같이 텅스텐막(27)과 알루미늄막(25)의 계면에 WAl12의 석출물(28)이 형성되어 홀 내부를 매립시키게 된다.Subsequently, when the hole is buried in a high temperature (500 to 525 ° C.) aluminum deposition process, as shown in FIG. 25, a precipitate 28 of WAl 12 is formed at the interface between the tungsten film 27 and the aluminum film 25 to form a hole. Buried inside.
한편, 제 3 도는 본 발명의 다른 실시예인 스퍼터링에 의한 텅스텐 접합층을 이용하는 방법을 나타내는 도면으로, 도시된 바와 같이 산화막(30)의 홀 내에 티타늄막(31), 질화티타늄막(32)을 증착한 다음, 스퍼터링에 의한 텅스텐막(39)을 형성한 다음, 고온(500 내지 525℃)의 알루미늄 증착공정으로 홀 매립을 진행하면 WAl12의 석출물(38)이 형성되어 홀 내부를 매립시키게 된다.3 is a view showing a method of using a tungsten bonding layer by sputtering, which is another embodiment of the present invention. As shown in the drawing, a titanium film 31 and a titanium nitride film 32 are deposited in the holes of the oxide film 30. Next, after forming the tungsten film 39 by sputtering, and then filling the hole by the high temperature (500 to 525 ° C.) aluminum deposition process, precipitates 38 of WAl 12 are formed to fill the inside of the hole.
한편, 상기 제 2b 도 및 제 3 도의 공정에서 알루미늄 증착온도를 500℃ 미만으로 할 경우는 텅스텐과 알루미늄이 반응하지 않고, 525℃ 이상의 온도에서는 격자 결함이 많은 WAl12의 석출물 형성으로 저항 증가 요인으로 작용하므로 주의를 요한다.On the other hand, when the aluminum deposition temperature is lower than 500 ° C. in the processes of FIGS. 2B and 3, tungsten and aluminum do not react, and at temperatures above 525 ° C., precipitates of WAl 12 having many lattice defects may increase resistance. Be careful because it works.
또한 알루미늄 내에 실리콘 첨가 합금 원소의 양을 증대시킴으로써 실리콘기판에서의 스파이킹에 의한 소자의 불량원인을 억제시키고, 실리콘은 고온에서의 텅스텐과 알루미늄의 반응을 촉진시켜 홀 매립 특성을 증대시킬 수 있다.In addition, by increasing the amount of the silicon-added alloy element in the aluminum, it is possible to suppress the cause of the defective device due to the spiking on the silicon substrate, the silicon can promote the reaction of tungsten and aluminum at high temperature to increase the hole filling characteristics.
상기와 같이 화학기상증착에 의한 텅스텐 접합층은 스퍼터링에 의한 티타늄 접합층에 비해 홀에서의 층덮힘이 우수하고, 이후의 고온 알루미늄 증착으로 WAl12형태의 석출물 형성에 의한 부착되는 알루미늄 양을 증대시켜 256M D램급 이상의 미세 콘택홀 매립이 가능하게 한다.As described above, the tungsten bonding layer by chemical vapor deposition has better layer covering in the hole than the titanium bonding layer by sputtering, and the amount of aluminum adhered by the formation of precipitates of the WAl 12 type is increased by subsequent high temperature aluminum deposition. It enables the filling of fine contact holes of 256M DRAM or more.
또한, 스퍼터링에 의한 텅스텐 접합층을 이용하면 텅스텐 자체가 콘택에서의 확산방지막 역할을 해주기 때문에 질화티타늄막의 증착이 필요치 않아 공정 단순화의 효과를 얻을 수 있다.In addition, when the tungsten bonding layer by sputtering is used, tungsten itself acts as a diffusion barrier in the contact, so that the deposition of a titanium nitride film is not required, thereby achieving a process simplification.
Claims (6)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950003736A KR0144021B1 (en) | 1995-02-24 | 1995-02-24 | Contact hole embedding method using tungsten bonding layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950003736A KR0144021B1 (en) | 1995-02-24 | 1995-02-24 | Contact hole embedding method using tungsten bonding layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR0144021B1 true KR0144021B1 (en) | 1998-08-17 |
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ID=19408778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950003736A Expired - Fee Related KR0144021B1 (en) | 1995-02-24 | 1995-02-24 | Contact hole embedding method using tungsten bonding layer |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0144021B1 (en) |
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1995
- 1995-02-24 KR KR1019950003736A patent/KR0144021B1/en not_active Expired - Fee Related
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