JPS63224341A - Wiring structure for semiconductor device - Google Patents
Wiring structure for semiconductor deviceInfo
- Publication number
- JPS63224341A JPS63224341A JP5801887A JP5801887A JPS63224341A JP S63224341 A JPS63224341 A JP S63224341A JP 5801887 A JP5801887 A JP 5801887A JP 5801887 A JP5801887 A JP 5801887A JP S63224341 A JPS63224341 A JP S63224341A
- Authority
- JP
- Japan
- Prior art keywords
- film
- metal
- wiring
- resistance
- electromigration resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 20
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 3
- 238000002844 melting Methods 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 5
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 229910017305 Mo—Si Inorganic materials 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910001080 W alloy Inorganic materials 0.000 description 5
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 5
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 5
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体装置の配線構造に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a wiring structure of a semiconductor device.
従来、半導体装置の配線はほとんどの場合、アルミニウ
ムを主成分とする金属膜を用いた単層横変は増加の一途
をたどシ、エレクトロマイグレーションによる配線の断
線および配線間の短絡が問題となってきたため、近年、
シリサイドを導電膜力￥
に被覆した多層構造Ｉ配線構造として提案されている。Conventionally, in most semiconductor device wiring, single-layer lateral deformation using metal films mainly composed of aluminum has been increasing, and wire breakage and short circuits between wires due to electromigration have become problems. In recent years,
It has been proposed as a multilayer wiring structure in which silicide is coated with a conductive film.
（Ｓ、Ｓｈｉｍａ ｅｔ ａｌ、 ＩＥＥＥ／ＰＲＯＣ
，Ｖ−ＭＩＣ，１９８４，Ｐ６１）。(S, Shima et al, IEEE/PROC
, V-MIC, 1984, P61).
しかしながら、上述した配線構造では導電膜の上面はシ
リサイドでおおわれるが、導電膜の側面は導電膜が露出
した構造となっているので、エレクトロマイグレーショ
ンによる配線の断線および配線間の短絡に対し未だ十分
な耐性を持つに至っていない。However, in the above-mentioned wiring structure, although the top surface of the conductive film is covered with silicide, the conductive film is exposed on the side surfaces of the conductive film. It has not yet reached the point where it has sufficient tolerance.
本発明の目的は上記欠点を排除し、エレクトロマイグレ
ーション耐性の優れた配線構造を提供することである。An object of the present invention is to eliminate the above-mentioned drawbacks and provide a wiring structure with excellent electromigration resistance.
本発明の配線構造は、金属膜より成る配線の底面、側面
および上面がエレクトロマイグレーション耐性の優れた
導電膜で覆われている。In the wiring structure of the present invention, the bottom, side and top surfaces of the wiring made of a metal film are covered with a conductive film having excellent electromigration resistance.
次に、本発明の実施例を図面を用いて説明する。 Next, embodiments of the present invention will be described using the drawings.
第１図は、本発明の概念を示すための断面図であシ、配
線となる金属膜１の上面、底面および側面をエレクトロ
マイグレーション耐性に優れる導電膜２で覆った構造と
なっている。FIG. 1 is a cross-sectional view showing the concept of the present invention, and has a structure in which the top, bottom and side surfaces of a metal film 1 serving as wiring are covered with a conductive film 2 having excellent electromigration resistance.
第２図（ａ）〜（Ｃ）は本発明の第１の実施例を説明す
るための工程順序断面図である。FIGS. 2(a) to 2(C) are step-by-step cross-sectional views for explaining the first embodiment of the present invention.
第２図（ａ）に示すように、層間膜３の上にチタン・タ
ングステン合金膜４をスパッタ法にょシ約２００ＯＡ形
成し、さらにアルミニウム膜５をスパッタ法により約１
μｍ形成する。As shown in FIG. 2(a), a titanium-tungsten alloy film 4 with a thickness of about 200 OA is formed on the interlayer film 3 by sputtering, and an aluminum film 5 of about 200 OA is further formed on the interlayer film 3 by sputtering.
μm is formed.
次に第２図（ｂ）に示すように、通常の７オトレジスト
エ程により、アルミニウム膜５およびチタン・タングス
テン合金膜４のパターニングを行なりて所定の配線形状
にした後、レジストを除去する。Next, as shown in FIG. 2(b), the aluminum film 5 and the titanium-tungsten alloy film 4 are patterned into a predetermined wiring shape by seven ordinary photoresist steps, and then the resist is removed.
次に第２図（Ｃ）に示すように選択的化学気相成長法に
より、チタン・タングステン合金膜４およびアルミニウ
ム膜５０表面にタングステン膜６を約３００ＯＡ形成す
る。Next, as shown in FIG. 2C, a tungsten film 6 of about 300 OA is formed on the surfaces of the titanium-tungsten alloy film 4 and the aluminum film 50 by selective chemical vapor deposition.
このような構造の配線は、チタン・タングステン合金膜
４およびタングステン膜６がエレクトロマイグレーショ
ン耐性に優れているのでアルミニウム膜５の原子の移動
先が存在せずアルミニウム膜５自身のエレクトロマイグ
レーション耐性が向上し、配線全体としてエレクトロマ
イグレーション耐性が非常に優れた構造になっている。In the wiring having such a structure, since the titanium-tungsten alloy film 4 and the tungsten film 6 have excellent electromigration resistance, there is no destination for the atoms of the aluminum film 5 to move to, and the electromigration resistance of the aluminum film 5 itself is improved. The overall wiring structure has excellent electromigration resistance.
しかも、アルミニウムを主要配線材料として使用してい
るので、安価かつ低抵抗かつ加工性に優れているという
利点を生かした構造となっている。Moreover, since aluminum is used as the main wiring material, the structure takes advantage of the advantages of being inexpensive, low resistance, and excellent in workability.
第３図（ａ）〜（ｃ）は本発明の第２の実施例を説明す
るための工程順序断面図である。FIGS. 3(a) to 3(c) are step-sequence cross-sectional views for explaining the second embodiment of the present invention.
第３図（ａ）に示すように、眉間膜７の上にモリブデン
シリサイド膜８をスパッタ浩にょシ約２００ＯＡ形成し
、さらにアルミニウム膜９をスパッタ法により約１μｍ
形成する。As shown in FIG. 3(a), a molybdenum silicide film 8 with a thickness of about 200 OA is formed by sputtering on the glabellar film 7, and an aluminum film 9 is further formed with a thickness of about 1 μm by sputtering.
Form.
次に第３図（ｂ）に示すように通常の７オトレジストエ
程によりアルミニウム膜９およびモリブデンシリサイド
膜８のバターニングを行なって所定の配線を形成した後
にレジスト除去する。Next, as shown in FIG. 3(b), the aluminum film 9 and the molybdenum silicide film 8 are patterned by a normal 7-photoresist process to form a predetermined wiring, and then the resist is removed.
次に第３図（Ｃ）に示すように無電解メッキ法にょシ、
モリブデンシリサイド膜８およびアルミニウム＠９の表
面に選択的にニッケル膜１０を約３００ＯＡ形成する。Next, as shown in Fig. 3(C), electroless plating is applied.
A nickel film 10 of about 300 OA is selectively formed on the surfaces of the molybdenum silicide film 8 and aluminum@9.
このような構造の配線は、モリブデンシリサイド膜８お
よびニッケル膜ｌＯがエレクトロマイグレーション耐性
に優れているのでアルミニウム膜９の原子の移動先が存
在せずアルミニウム膜９自身のエレクトロマイグレーシ
ラン耐性が向上し、配線全体としてエレクトロマイグレ
ーション耐性が非常に優れた構造になっている。しかも
、アルミニウムを主要配線材料として使用しているので
、安価かつ低抵抗かつ加工性に優れているという利点を
生かした構造となっている。In the wiring having such a structure, since the molybdenum silicide film 8 and the nickel film 1O have excellent electromigration resistance, there is no place for the atoms of the aluminum film 9 to migrate, and the electromigration silane resistance of the aluminum film 9 itself is improved. The overall wiring structure has excellent electromigration resistance. Moreover, since aluminum is used as the main wiring material, the structure takes advantage of the advantages of being inexpensive, low resistance, and excellent in workability.
以上説明したように、本発明の配線構造は、配線金属の
底面および側面および上面をエレクトロマイグレーショ
ン耐性の優れた導電膜で覆うことにより、エレクトロマ
イグレーシラン耐性の非常に優れた構造となっているの
で半導体装置を高速化および高密度化させる効果がある
。このエレクトロマイグレーション耐性の優れた導電膜
としてはＴｉ、Ｔｉ−Ｗ、Ｍｏ−８ｉ、Ｎｉの他に高融
点金属又は金属シリサイドを用いることができる。さら
に、主要配線金属としてアルミニウム又はアルミニウム
を主成分とする金属を使用することができるので、安価
かつ低抵抗かつ加工性に優れていると利点を生かすこと
ができその効果は大きい。As explained above, the wiring structure of the present invention has a structure with extremely high resistance to electromigration silane by covering the bottom, side and top surfaces of the metal wiring with a conductive film having high resistance to electromigration. This has the effect of increasing the speed and density of semiconductor devices. As this conductive film having excellent electromigration resistance, a high melting point metal or metal silicide can be used in addition to Ti, Ti-W, Mo-8i, and Ni. Furthermore, since aluminum or a metal containing aluminum as a main component can be used as the main wiring metal, the advantages of being inexpensive, low resistance, and excellent in workability can be utilized, and the effect is large.
【図面の簡単な説明】
めの工程順序断面図である。
１・・・・・・金属膜、２・・・・・・導［膜、３・・
・・・・層間膜、４・・・・・・チタン・タングステン
合金膜、５・・・・・・アルミニウム膜、６・・・・・
・タングステン膜、７・・・・・・層間膜、８・・・・
・・モリブデンシリサイド膜、９・・・・・・ニッケル
膜。
＼′、巴′
第 １ 図[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1... Metal film, 2... Conductive film, 3...
...Interlayer film, 4...Titanium-tungsten alloy film, 5...Aluminum film, 6...
・Tungsten film, 7... Interlayer film, 8...
...Molybdenum silicide film, 9...Nickel film. ＼′、Tomoe′ Figure 1
Claims (3)
レクトロマイグレーション耐性の優れた導電膜で覆われ
ていることを特徴とする半導体装置の配線構造。(1) A wiring structure for a semiconductor device, characterized in that the bottom, side and top surfaces of the wiring made of a metal film are covered with a conductive film having excellent electromigration resistance.
とする金属膜より成る配線であることを特徴とする特許
請求の範囲第１項記載の半導体装置の配線構造。(2) The wiring structure of a semiconductor device according to claim 1, wherein the wiring made of the metal film is a wiring made of a metal film containing aluminum as a main component.
電膜が高融点金属または金属シリサイドを主成分とする
導電膜であることを特徴とする特許請求の範囲第１項又
は第２項記載の半導体装置の配線構造。(3) Wiring for a semiconductor device according to claim 1 or 2, wherein the conductive film having excellent electromigration resistance is a conductive film containing a high melting point metal or metal silicide as a main component. structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5801887A JPS63224341A (en) | 1987-03-13 | 1987-03-13 | Wiring structure for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5801887A JPS63224341A (en) | 1987-03-13 | 1987-03-13 | Wiring structure for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63224341A true JPS63224341A (en) | 1988-09-19 |
Family
ID=13072224
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5801887A Pending JPS63224341A (en) | 1987-03-13 | 1987-03-13 | Wiring structure for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63224341A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278827A (en) * | 1989-04-20 | 1990-11-15 | Nec Corp | Wiring structure of semiconductor integrated circuit device and its formation |
| JP2005526379A (en) * | 2001-11-13 | 2005-09-02 | モトローラ・インコーポレイテッド | Strengthening the cladding magnetic field of MRAM devices |
-
1987
- 1987-03-13 JP JP5801887A patent/JPS63224341A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02278827A (en) * | 1989-04-20 | 1990-11-15 | Nec Corp | Wiring structure of semiconductor integrated circuit device and its formation |
| JP2005526379A (en) * | 2001-11-13 | 2005-09-02 | モトローラ・インコーポレイテッド | Strengthening the cladding magnetic field of MRAM devices |
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