JPS6239641A - Filler for plastic package of ic and prodction thereof - Google Patents
Filler for plastic package of ic and prodction thereofInfo
- Publication number
- JPS6239641A JPS6239641A JP60179162A JP17916285A JPS6239641A JP S6239641 A JPS6239641 A JP S6239641A JP 60179162 A JP60179162 A JP 60179162A JP 17916285 A JP17916285 A JP 17916285A JP S6239641 A JPS6239641 A JP S6239641A
- Authority
- JP
- Japan
- Prior art keywords
- filler
- average particle
- plastic package
- weight
- particle size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000945 filler Substances 0.000 title claims abstract description 16
- 239000004033 plastic Substances 0.000 title claims abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000005350 fused silica glass Substances 0.000 claims abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 19
- 239000000843 powder Substances 0.000 claims abstract description 17
- 238000002156 mixing Methods 0.000 claims abstract description 7
- 229910052770 Uranium Inorganic materials 0.000 claims abstract description 4
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000002285 radioactive effect Effects 0.000 claims abstract 2
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000005260 alpha ray Effects 0.000 abstract 1
- 238000000465 moulding Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- 241000287828 Gallus gallus Species 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005558 fluorometry Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＩＣプラスチックパッケージ用充てん剤および
その製造方法に関し、特には、ＩＣの高集積化にともな
うα線によるソフトエラーの問題、ならびにトランスフ
ァー成形用金型の大型化にともなう未完てん部分発生等
の問題を有利に解決することのできる特定の組合せから
なる高純度溶融石英系充てん剤の提供を目的とする。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a filler for IC plastic packages and a method for manufacturing the same, and in particular, to solve the problem of soft errors caused by alpha rays accompanying high integration of ICs, and transfer molding. The object of the present invention is to provide a high-purity fused silica filler made of a specific combination that can advantageously solve problems such as the occurrence of unfinished parts as molds become larger.
（従来の技ｔ４＋ｉ）
現在、ＩＣメモリーの高集積化、チップの大型化さらに
はメモリーセルの縮小化にともない、ＩＣのプラスチッ
クパッケージ用充てん剤から放出されるα線によるソフ
トエラーの発生が大きな問題となっている。これを解決
するために、充てん剤としてのα線量の少ない天然高純
度溶融石英あるいは合成石英などが使用されているので
あり、これらの粉砕プロセスについてもα線量の低いア
ルミナで被覆した装置を用いるなどの考慮がはられれて
いる。しかし、そのような高純度Ｉ′ｓ融石英を純度を
おとさずに充てん剤として要求される粒度にまで粉砕す
ることはながなが困難であるのみならず、他方において
充てん剤の性質に起因するモールディングコンパウンド
のスパイラルフローの問題が新たに指摘され、その解決
が要望されている。(Conventional technique t4+i) Currently, as IC memories become more highly integrated, chips become larger, and memory cells become smaller, the occurrence of soft errors caused by alpha rays emitted from the filler for IC plastic packages is a major problem. It becomes. To solve this problem, natural high-purity fused silica or synthetic quartz, which has a low amount of alpha rays, is used as a filler, and the crushing process for these materials also uses equipment coated with alumina, which has a low amount of alpha rays. consideration has been taken. However, it is not only extremely difficult to grind such high-purity I's fused silica to the particle size required as a filler without sacrificing its purity; The problem of spiral flow has been newly pointed out, and a solution is desired.
すなわち、ＩＣチップの大型化によりＩ−ランスファー
成形用金型の大型化がすすみ、未完てん部分発生の問題
が起こってきたことから、コンパウンドに配合する石英
充てん剤についてはその粒度分布を精密に管理すること
によりスパイラルフロー特性を調節し、未完てん部分発
生の改善をはかり、あわせてパリ発生を抑制する検討が
なされているが未だ満足できる成果が得られていない現
状である。In other words, as IC chips have become larger, molds for I-transfer molding have become larger, and the problem of unfinished parts has arisen, so the particle size distribution of the quartz filler added to the compound must be precisely controlled. Studies have been made to control the spiral flow characteristics, improve the occurrence of unfinished parts, and suppress the occurrence of paris, but no satisfactory results have been obtained so far.
（発明の構成）
本発明はかかる技術的課題に対し鋭意研究の結果なされ
たもので、これは平均粒径５〜３０μｍの溶融石英粉９
７．Ｏ〜９９．５重量％と平均粒径が１０〜５００ｎｍ
の球状ｔ８融石英粉０．５〜３．０重量％とからなるＩ
Ｃプラスチックパッケージ用充完ん剤に関する。(Structure of the Invention) The present invention was made as a result of intensive research to solve this technical problem, and is based on fused silica powder with an average particle size of 5 to 30 μm.
7. O~99.5% by weight and average particle size 10~500nm
I consisting of 0.5-3.0% by weight of spherical T8 fused silica powder of
C. Concerning a filler for plastic packages.
本発明はまた、漁充てん剤の有利な製造方法を提供する
もので、これは高純度石英ガラスインゴット粗砕物を粉
砕し分級して得た平均粒子径５〜３０μｍの溶融石英粉
９７．０〜９９．５重量部と平均粒径１０〜５００ｎｍ
の球状溶融石英粉０．５〜３．０重量部を、ボールミル
中で混合することを特徴とする方法に関する。The present invention also provides an advantageous method for producing a fishing filler, which uses fused silica powder with an average particle size of 5 to 30 μm obtained by crushing and classifying a crushed high-purity quartz glass ingot. 99.5 parts by weight and average particle size 10-500 nm
0.5 to 3.0 parts by weight of spherical fused silica powder are mixed in a ball mill.
以下、本発明をさらに詳細に説明する。The present invention will be explained in more detail below.
本発明は、同一材質の粒子であっても、球状微粒子は機
械的に粉砕した、より大きい粒子に吸着するという、新
たな知見に基づいてなされたものである。The present invention was made based on the new finding that even if the particles are made of the same material, spherical fine particles are adsorbed to mechanically crushed larger particles.
すなわち本発明は、配合比が適正である場合、球状微粒
子がより大きい粉砕粒子を均等に被覆するもが造が得ら
れる事実を利用して、平均粒径５〜３０μｒｎの粉砕さ
れた溶融石英粉とこれよりはるかに微粉の平均粒径が１
０〜５００ｎｍの球状溶融石英粉とからなるＩＣプラス
チックパッケージ用充完ん剤を提供するもので、これは
適正なチキン１〜ロビーをもつためパリの発生や未完て
んの欠陥が大巾に減少する。That is, the present invention takes advantage of the fact that when the blending ratio is appropriate, a structure in which spherical fine particles evenly cover larger crushed particles can be obtained, and by using this fact, crushed fused silica powder with an average particle size of 5 to 30 μrn can be obtained. The average particle size of the fine powder is 1
This product provides a filler for IC plastic packages consisting of 0-500 nm spherical fused silica powder, which has a proper chicken 1~lobby, which greatly reduces the occurrence of cracks and unfinished packaging defects. .
なお、その適正なチキソトロピーはスパイラルフローで
評価することができる。ＥＭＭｒ規格による金型で１６
０ ’Ｃ１７０ｋｇ／ｃｎｔの条件においてスパイラル
フロー値が１００〜１１０ｃｍになると良好なパッケー
ジングが行われる。In addition, the appropriate thixotropy can be evaluated by spiral flow. 16 in mold according to EMMr standard
Good packaging is achieved when the spiral flow value is 100 to 110 cm under the condition of 0'C170 kg/cnt.
前記球状溶融石英粉の配合割合が３重作％を超えるとパ
リの発生が大きくなり歩留まりが悪くなる。一方０．５
重量％以下では本発明の目的とする効果が得られない。If the blending ratio of the spherical fused quartz powder exceeds 3%, the occurrence of flakes will increase and the yield will deteriorate. On the other hand, 0.5
If the amount is less than % by weight, the desired effect of the present invention cannot be obtained.
実施例
合成石英ガラスインゴットを、石英製ポット中で石英ガ
ラスポールを使用して平均粒径１５μｍに粉砕し、１０
０メツシユのスクリーンでカットした後、球状溶融石英
微粉末（日本アエロジル■製品名「アエロジル」）を０
．０．３．０．７．１．５゜２．５．４ ｉ１１量％ず
つ添加し、それぞれミキシングロールで１０分間混練後
冷却固化し粉砕した。次に粉砕物をＥ Ｍ Ｍ Ｉ規格
に僧じた金型を使用して成形温度１６０℃、成形圧カフ
０ｋｇ１ｒＪで成形した。成形にはクレゾールノボラッ
クエポキシ樹脂（チバガイギーＥＣＨ−１２８０） １
００重量部、フェノールノボラック樹脂（チバガイギー
）ＩＴ−９４９０） ３０重量部と２−メチルイミダゾ
ール０．５重量部。Example A synthetic quartz glass ingot was ground to an average particle size of 15 μm in a quartz pot using a quartz glass pole.
After cutting with a mesh screen, spherical fused quartz fine powder (Nippon Aerosil ■Product name ``Aerosil'') is
．． 0.3.0.7.1.5°2.5.4i11% by weight were added, kneaded for 10 minutes using a mixing roll, cooled to solidify, and pulverized. Next, the pulverized product was molded using a mold conforming to the EMM I standard at a molding temperature of 160° C. and a molding pressure of 0 kg1rJ. For molding, use cresol novolac epoxy resin (Ciba Geigy ECH-1280) 1
00 parts by weight, 30 parts by weight of phenol novolak resin (Ciba Geigy IT-9490) and 0.5 parts by weight of 2-methylimidazole.
カルナウバワックス３重量部を用いた。この場合のスパ
イラルフロー、パリ、未完てんおよびウラン含量は表−
１のとおりであった。3 parts by weight of carnauba wax was used. The spiral flow, paris, unfinished metal and uranium content in this case are shown in Table-
It was as described in 1.
表−１
（１１］三）
ｊ スパイラルフローは温度１６０’Ｃ１成形圧カフ０
ｋｇ／ｃＪのときの値である。Table-1 (11] 3) j Spiral flow temperature 160'C1 molding pressure cuff 0
This is the value when kg/cJ.
ユ１ 未完てんは１００ケどり金型中の未完てん数で不
良率を示す。U1 Unfinished parts indicate the defective rate by the number of unfinished parts in 100 molds.
ｉｉｉ ウラン含有量は蛍光光度法による測定値であ
る。iii Uranium content is determined by fluorometry.
Claims (1)
９．５重量％と平均粒径１０〜５００ｎｍの球状溶融石
英粉０．５〜３．０重量％とからなるＩＣプラスチック
パッケージ用充てん剤。 ２）ウラン等の放射性元素含有量が１ｐｐｂ以下である
特許請求の範囲第１項記載のＩＣプラスチックパッケー
ジ用充てん剤。 ３）高純度石英ガラスインゴット粗砕物を粉砕し分級し
て得た平均粒径５〜３０μｍの溶融石英粉９７．０〜９
９．５重量％と平均粒径１０〜５００ｎｍの球状溶融石
英粉０．５〜３．０重量％とを、ボールミル中で混合す
ることを特徴とするＩＣプラスチックパッケージ用充て
ん剤の製造方法。 ４）内壁が石英ガラス製であるボールミルと石英ガラス
製のボールとを用いて混合することを特徴とする特許請
求の範囲第１項記載の製造方法。[Claims] 1) Fused quartz powder with an average particle size of 5 to 30 μm 97.0 to 9
A filler for an IC plastic package, comprising 9.5% by weight and 0.5 to 3.0% by weight of spherical fused silica powder with an average particle size of 10 to 500 nm. 2) The filler for an IC plastic package according to claim 1, wherein the content of radioactive elements such as uranium is 1 ppb or less. 3) Fused quartz powder 97.0-9 with an average particle size of 5-30 μm obtained by crushing and classifying a coarsely crushed high-purity quartz glass ingot
A method for producing a filler for an IC plastic package, which comprises mixing 9.5% by weight of a filler and 0.5 to 3.0% by weight of spherical fused silica powder having an average particle size of 10 to 500 nm in a ball mill. 4) The manufacturing method according to claim 1, wherein the mixing is carried out using a ball mill whose inner wall is made of quartz glass and balls made of quartz glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60179162A JPS6239641A (en) | 1985-08-14 | 1985-08-14 | Filler for plastic package of ic and prodction thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60179162A JPS6239641A (en) | 1985-08-14 | 1985-08-14 | Filler for plastic package of ic and prodction thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6239641A true JPS6239641A (en) | 1987-02-20 |
Family
ID=16061023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60179162A Pending JPS6239641A (en) | 1985-08-14 | 1985-08-14 | Filler for plastic package of ic and prodction thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6239641A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7327039B2 (en) | 2002-05-23 | 2008-02-05 | 3M Innovative Properties Company | Nanoparticle filled underfill |
| CN106255315A (en) * | 2016-07-28 | 2016-12-21 | 江苏联瑞新材料股份有限公司 | A kind of preparation method of ic substrate electron level superfine composite silicon powder |
-
1985
- 1985-08-14 JP JP60179162A patent/JPS6239641A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7327039B2 (en) | 2002-05-23 | 2008-02-05 | 3M Innovative Properties Company | Nanoparticle filled underfill |
| US7482201B2 (en) | 2002-05-23 | 2009-01-27 | 3M Innovative Properties Company | Nanoparticle filled underfill |
| CN106255315A (en) * | 2016-07-28 | 2016-12-21 | 江苏联瑞新材料股份有限公司 | A kind of preparation method of ic substrate electron level superfine composite silicon powder |
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