JPS6459851A - Manufacture of soi wafer - Google Patents

Abstract

PURPOSE:To bury an electrode, a wiring part or the like in the under-surface and to flatten a plane by a method wherein an SiC film is formed on a single- crystal Si substrate, its surface is covered with an insulating film, the single- crystal Si substrate is removed and the SiC film is exposed in order to improve crystallinity. CONSTITUTION:An SiC substrate 1 is mounted on a suspector coated with SiC inside a reaction chamber in a low-pressure CVD apparatus of an induction heating system; an SiC film 2 is grown epitaxially. Any kind of SiC to be constituted may be used; but beta-SiC is preferable. The impurity-containing polycrystalline Si film is patterned; a gate electrode 4 is formed; a gate insulating film 3 under it is patterned to be an identical pattern. An n-type source region 5 and an n-type drain region 6 are formed by a self-alignment system by which ions of As are implanted. A thick SiO2 film 7 is formed on a whole face by a CVD method. A sheet of thick low-melting-point glass as a reinforcing material is melted at a low temperature and is pasted on the surface. This assembly is immersed in an Si etching solution; the Si substrate 1 is removed; the surface and the rear are reversed; then the SiC film 2 is exposed.