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JPS5294773A - Semiconductor element and its manufacture - Google Patents

Semiconductor element and its manufacture

Info

Publication number
JPS5294773A
JPS5294773A JP1194776A JP1194776A JPS5294773A JP S5294773 A JPS5294773 A JP S5294773A JP 1194776 A JP1194776 A JP 1194776A JP 1194776 A JP1194776 A JP 1194776A JP S5294773 A JPS5294773 A JP S5294773A
Authority
JP
Japan
Prior art keywords
layer
manufacture
semiconductor element
metal layer
highdependability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1194776A
Other languages
Japanese (ja)
Inventor
Yukihide Watanabe
Shunji Otani
Kenichi Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP1194776A priority Critical patent/JPS5294773A/en
Publication of JPS5294773A publication Critical patent/JPS5294773A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: Ti layer is formed on GaAs substrate, and Au or A electrode metal layer is formed on Ti layer via metal layer of Mo, W or Cr. As a result, the direct reaction is prevented between Ti layer and Au or Al layer. At the same time, high heatproof and highdependability Schottky barrier contact, preventing Ga diffusion.
COPYRIGHT: (C)1977,JPO&Japio
JP1194776A 1976-02-05 1976-02-05 Semiconductor element and its manufacture Pending JPS5294773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1194776A JPS5294773A (en) 1976-02-05 1976-02-05 Semiconductor element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1194776A JPS5294773A (en) 1976-02-05 1976-02-05 Semiconductor element and its manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP15628279A Division JPS55120132A (en) 1979-11-30 1979-11-30 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS5294773A true JPS5294773A (en) 1977-08-09

Family

ID=11791823

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1194776A Pending JPS5294773A (en) 1976-02-05 1976-02-05 Semiconductor element and its manufacture

Country Status (1)

Country Link
JP (1) JPS5294773A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543893A (en) * 1978-09-22 1980-03-27 Ibm Schottky barrier diode
JPS60219765A (en) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp Short key barrier electrode
JPS6232656A (en) * 1985-08-05 1987-02-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPH02155271A (en) * 1988-12-07 1990-06-14 Toshiba Corp semiconductor equipment
US6372613B2 (en) 1997-05-29 2002-04-16 Nec Corporation Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor
JP2004529506A (en) * 2001-06-01 2004-09-24 ゼネラル セミコンダクター，インク． Trench schottky rectifier

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5543893A (en) * 1978-09-22 1980-03-27 Ibm Schottky barrier diode
JPS60219765A (en) * 1984-04-16 1985-11-02 Mitsubishi Electric Corp Short key barrier electrode
JPS6232656A (en) * 1985-08-05 1987-02-12 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and manufacture thereof
JPH02155271A (en) * 1988-12-07 1990-06-14 Toshiba Corp semiconductor equipment
US6372613B2 (en) 1997-05-29 2002-04-16 Nec Corporation Method of manufacturing a gate electrode with low resistance metal layer remote from a semiconductor
JP2004529506A (en) * 2001-06-01 2004-09-24 ゼネラル セミコンダクター，インク． Trench schottky rectifier

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