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JPS5180160A - Ishitsukibanjoheno handotaisokeiseihoho - Google Patents

Ishitsukibanjoheno handotaisokeiseihoho

Info

Publication number
JPS5180160A
JPS5180160A JP467675A JP467675A JPS5180160A JP S5180160 A JPS5180160 A JP S5180160A JP 467675 A JP467675 A JP 467675A JP 467675 A JP467675 A JP 467675A JP S5180160 A JPS5180160 A JP S5180160A
Authority
JP
Japan
Prior art keywords
ishitsukibanjoheno
handotaisokeiseihoho
ishitsukibanjoheno handotaisokeiseihoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP467675A
Other languages
Japanese (ja)
Other versions
JPS6012775B2 (en
Inventor
Yukio Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP50004676A priority Critical patent/JPS6012775B2/en
Publication of JPS5180160A publication Critical patent/JPS5180160A/en
Publication of JPS6012775B2 publication Critical patent/JPS6012775B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Recrystallisation Techniques (AREA)
JP50004676A 1975-01-09 1975-01-09 Method for forming a single crystal semiconductor layer on a foreign substrate Expired JPS6012775B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50004676A JPS6012775B2 (en) 1975-01-09 1975-01-09 Method for forming a single crystal semiconductor layer on a foreign substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50004676A JPS6012775B2 (en) 1975-01-09 1975-01-09 Method for forming a single crystal semiconductor layer on a foreign substrate

Publications (2)

Publication Number Publication Date
JPS5180160A true JPS5180160A (en) 1976-07-13
JPS6012775B2 JPS6012775B2 (en) 1985-04-03

Family

ID=11590488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50004676A Expired JPS6012775B2 (en) 1975-01-09 1975-01-09 Method for forming a single crystal semiconductor layer on a foreign substrate

Country Status (1)

Country Link
JP (1) JPS6012775B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558520A (en) * 1978-10-23 1980-05-01 Philips Nv Method of manufacturing semiconductor device
WO1998058408A1 (en) * 1997-06-19 1998-12-23 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
WO2000019500A1 (en) * 1998-09-25 2000-04-06 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03100672U (en) * 1990-02-05 1991-10-21

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
NIKKEI ELECTRONICS#M7=1974 *
SEMICONDUCTOR SILI *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558520A (en) * 1978-10-23 1980-05-01 Philips Nv Method of manufacturing semiconductor device
WO1998058408A1 (en) * 1997-06-19 1998-12-23 Asahi Kasei Kogyo Kabushiki Kaisha Soi substrate and process for preparing the same, and semiconductor device and process for preparing the same
US6528387B1 (en) 1997-06-19 2003-03-04 Asahi Kasei Kabushiki Kaisha SOI substrate and process for preparing the same, and semiconductor device and process for preparing the same
WO2000019500A1 (en) * 1998-09-25 2000-04-06 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method
US6768175B1 (en) 1998-09-25 2004-07-27 Asahi Kasei Kabushiki Kaisha Semiconductor substrate and its production method, semiconductor device comprising the same and its production method

Also Published As

Publication number Publication date
JPS6012775B2 (en) 1985-04-03

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