JPS5966183U - 放射線測定装置 - Google Patents
放射線測定装置Info
- Publication number
- JPS5966183U JPS5966183U JP16036982U JP16036982U JPS5966183U JP S5966183 U JPS5966183 U JP S5966183U JP 16036982 U JP16036982 U JP 16036982U JP 16036982 U JP16036982 U JP 16036982U JP S5966183 U JPS5966183 U JP S5966183U
- Authority
- JP
- Japan
- Prior art keywords
- measuring device
- optical signal
- detector
- radiation measuring
- transmits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
第１図は従来の放射性測定装置の説明図、第２図は本考
案の好適な実施例を示す放射線測定装置の説明図、第３
図Ｃ１本考案の他の実施例を示す説明図である。 ３０・・・検出器、３４・・・シンチレータ、３８・・
・光フアイバケーブル、４０・・・測定器、４４・・・
光電子増倍管。
案の好適な実施例を示す放射線測定装置の説明図、第３
図Ｃ１本考案の他の実施例を示す説明図である。 ３０・・・検出器、３４・・・シンチレータ、３８・・
・光フアイバケーブル、４０・・・測定器、４４・・・
光電子増倍管。
Claims (1)
- シンチレータを用いて人体の測定個所から発せられる放
射線を光信号に変換する検出器と、二の検出器から出力
される光信号を伝送する光フアイバケーブルと、この光
フアイバケーブルを介して伝送されて来る光信号を光電
子増倍管を用いて電気信号に変換し人体の測定個所から
発せられる放射線を測定する測定器と、を備えたことを
特徴とする放射線測定装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16036982U JPS5966183U (ja) | 1982-10-25 | 1982-10-25 | 放射線測定装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16036982U JPS5966183U (ja) | 1982-10-25 | 1982-10-25 | 放射線測定装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5966183U true JPS5966183U (ja) | 1984-05-02 |
Family
ID=30352747
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16036982U Pending JPS5966183U (ja) | 1982-10-25 | 1982-10-25 | 放射線測定装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5966183U (ja) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
-
1982
- 1982-10-25 JP JP16036982U patent/JPS5966183U/ja active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7067856B2 (en) | 2000-02-10 | 2006-06-27 | Freescale Semiconductor, Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
| US7005717B2 (en) | 2000-05-31 | 2006-02-28 | Freescale Semiconductor, Inc. | Semiconductor device and method |
| US7105866B2 (en) | 2000-07-24 | 2006-09-12 | Freescale Semiconductor, Inc. | Heterojunction tunneling diodes and process for fabricating same |
| US7211852B2 (en) | 2001-01-19 | 2007-05-01 | Freescale Semiconductor, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
| US7045815B2 (en) | 2001-04-02 | 2006-05-16 | Freescale Semiconductor, Inc. | Semiconductor structure exhibiting reduced leakage current and method of fabricating same |
| US6992321B2 (en) | 2001-07-13 | 2006-01-31 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials |
| US6855992B2 (en) | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
| US7161227B2 (en) | 2001-08-14 | 2007-01-09 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices for detecting an object |
| US7342276B2 (en) | 2001-10-17 | 2008-03-11 | Freescale Semiconductor, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US6916717B2 (en) | 2002-05-03 | 2005-07-12 | Motorola, Inc. | Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate |
| US7169619B2 (en) | 2002-11-19 | 2007-01-30 | Freescale Semiconductor, Inc. | Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process |
| US6885065B2 (en) | 2002-11-20 | 2005-04-26 | Freescale Semiconductor, Inc. | Ferromagnetic semiconductor structure and method for forming the same |
| US6965128B2 (en) | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
| US7020374B2 (en) | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
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