JPS59208790A - Solar cell - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

DETAILED DESCRIPTION OF THE INVENTION (Technical Field to which the Invention Pertains) The present invention utilizes a photovoltaic force generated by light incident on a semiconductor layer supported by a metal substrate from the opposite side of the substrate to a transparent electrode on the semiconductor layer and a transparent electrode on the semiconductor layer. The present invention relates to a solar cell in which a partially provided metal electrode is removed as one electrode.

[Prior art and its problems]

Solar cells are also known in which a transparent insulating plate is used as a substrate to support a semiconductor layer, a semiconductor layer is provided on the transparent insulating plate with a transparent conductive film as a lower electrode interposed therebetween, and a metal electrode is further provided on the entire surface of the transparent insulating plate. However, in cases where a metal substrate is used, for example, an amorphous silicon (hereinafter referred to as ASI) film 2 is placed on a metal substrate l as shown in the cross-sectional view of Figure 1.
, a structure in which transparent conductive films 3 are laminated and an upper current collecting electrode 4 made of metal is further provided thereon is known. Since the sheet resistance of the transparent conductive film 3 is 5Ω or more, the upper current collecting electrode 4 has branch portions 41 arranged at narrow intervals as shown in the plan view of FIG. 2 in order to reduce power loss due to this resistance. 4 having a pattern consisting of a main body 42 and a main body 42. Modification of such a solar cell is carried out by connecting the end of the main body 42 and the substrate of an adjacent cell with a lead wire. However, in such a solar cell, the upper current collecting electrode 4 blocks the incidence of light 5, so if the area of the upper current collecting electrode 4 is reduced in order to increase the effective light receiving area of the solar cell for incident light, the transparent There was a drawback that power loss due to resistance components in the conductive film 3 and the current collecting electrode 4 increased, resulting in a decrease in output characteristics.

In order to reduce such power loss, it is necessary to increase the width of the main section 420 where a particularly large current flows, which has a large effect on the effective light receiving area.

(Objective of the Invention) An object of the present invention is to provide a solar cell having a structure in which the effective light-receiving area can be increased without deteriorating the output characteristics. The metal layer is supported on a metal substrate via an insulating layer and a metal electrode layer having an opening, and is in contact with a transparent conductive film deposited on a semiconductor layer. [Embodiments of the Invention] FIGS. 3, 4, and 5 show embodiments of the present invention, and A-3 The figure is a plan view of the a-si solar cell according to the present invention as seen from the light incident side, FIG. 4 is a cross-sectional structural diagram thereof, and FIG. 5 is an enlarged view of a part thereof. In each figure,
The same parts as in Figs. 1 and 2 are given the same reference numerals. A metal electrode 7 that forms a lower electrode of a solar cell is formed on a metal substrate 1 with an insulating film 6 interposed therebetween. Furthermore, on top of this, there is a p, t, n three layer A-Si that forms the solar cell.
is continuously formed using SiH4 or 5i21 (6) plasma glow discharge decomposition method.Of course, the a-si film 2 may have a p-i-n structure, an 11-i-p structure, or a microcrystalline film. The application of the present invention will not be affected even if the structure uses a semiconductor single crystal plate or, depending on the case, a semiconductor single crystal plate.Furthermore, a transparent conductive film 3 is formed on the A-Si film 2.5
Each of the thin films 6, 7, 2.3 is patterned with a separation band to the extent that it does not adversely affect the formation of the A-SI solar cell, and the upper electrode 8 made of metal is formed by filling the separation band. Ru. As is clear from FIG. 5, which is an enlarged view of part A in FIG. is connected to. In this configuration, since the upper electrode 8 is connected to the metal substrate 1,
The electricity generated inside the a-Si layer 2 by the incident light is extracted from the metal electrode ( ) and the metal substrate 1. Comparing this structure with the structures shown in Figs. Assuming that &8 is provided at the same spacing as the branch section 41, the note resistance of the transparent 4-electrode film 3 is the same, but the upper electrode 4 has a ↓/-t resistance (・;'' , force tq
<Unreasonably, the resistance of the upper part' and L pole 8 is almost zero,
1. The invalid portion of the light receiving area by the main body 41 is also removed.
Therefore, the output can be increased by a solar cell of the same area.

FIG. 6 shows another embodiment 1', which differs from the one in FIG. 3 in that the upper electrode 8 is changed from a strip shape to a circle shape, thereby increasing the conversion efficiency of the effective light-receiving area of the solar cell. It is possible to obtain a Δ″u point that can be further increased without decreasing.

Furthermore, the metal electrodes shown in FIGS. 3 and 6! N, 1
If the portion 61 is extended at the end portion of the metal substrate 1 of a similar solar cell placed in contact with the IIA, the series connection of the solar cells when modularized is done through lead wires as in the conventional case. It can be done without. :l Between the transparent conductive film 3 and the metal substrate 1, an upper stack 8
(If it is formed in such a way that it contacts the metal electrode 7 of the felled part, there is no problem in contacting the A-Si film 2 and the insulating film 6. Therefore, as shown in FIG. 5, the metal electrode It is also effective to form the separation zone 7 thick so that the VC separation part is covered with the A-Si film during the growth of the A-Si film.

〔Effect of the invention〕

According to this invention, the upper electrode located on the light incident side of the solar cell 1 supported by the metal substrate is passed through the semiconductor layer)h
Since the upper electrode is connected to a metal substrate, it is possible to reduce the area of the electrode and increase the effective light-receiving area, thereby reducing the power loss due to the resistance component of the upper electrode and increasing the output of the solar cell. becomes possible. In addition, since both poles of the photovoltaic pre-emption [2. Because you can
This reduces connection costs and improves reliability, making it extremely effective in producing highly practical solar cell modules.

[Brief explanation of the drawing]

Fig. 1 is a sectional view of a conventional A-SI solar cell, Fig. 2 is a plan view of the finished product, Fig. 3 is a plan view of an embodiment of the present invention, and Fig. 4 is a plan view of an embodiment of the present invention.
The figures are a sectional view taken along the line X--X of FIG. 3, E and E are an enlarged view of part A in FIG. 4, and FIG. 6 is a plan view of another embodiment. l metal substrate, 2... a-sij model, 3 transparent conductive film,
6. Insulating film, 7 lower electrode, 8 upper electrode. 1 (2) (2 years old)

Claims (1)

[Claims] ■) A semiconductor layer is supported on a metal substrate via an insulating layer and a metal electrode layer with equal openings, and the metal layer in contact with the transparent conductive film deposited on the semiconductor layer is the transparent conductive film, the semiconductor layer, and the metal A solar cell characterized in that a metal substrate is reached through an opening in an electrode layer and an insulating layer.