JPS5898917U - Arm stretcher attached to chair-type pine surgery machine - Google Patents
Arm stretcher attached to chair-type pine surgery machineInfo
- Publication number
- JPS5898917U JPS5898917U JP19741681U JP19741681U JPS5898917U JP S5898917 U JPS5898917 U JP S5898917U JP 19741681 U JP19741681 U JP 19741681U JP 19741681 U JP19741681 U JP 19741681U JP S5898917 U JPS5898917 U JP S5898917U
- Authority
- JP
- Japan
- Prior art keywords
- chair
- shaft
- machine
- screw shaft
- type pine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Orthopedics, Nursing, And Contraception (AREA)
- Massaging Devices (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
本考案の実施例図で、第１図はもみ部の作動装 置を省
略した本装置の正面図、第２図は第１図のＡＡ線断面図
、第３図は本装置を付設したマツサージ機の側面図であ
る。
１・・・・・・機筺、２・・・・・・底板、３，３′・
・・・・・支持板、４・・・・・・電動機、５・・・・
・・減速機、６・・・・・・原動軸、７・・・・・・螺
軸、８・・・・・・筒軸、９・・・・・・ナツト、１０
・・・・・・回転軸、１２・・・・・・運動杆、１２′
・・・・・・握り、１３・・・・・・・スイッチ、１４
・・・・・・作動杆、′１５・・・・・・操作杆、１６
・・・・・・突片、１７・・・・・・孔、１８．１９・
・・・・・ストン／＜−
７°）２・
：１ ′°″］
（：；：
ｉ：弓
：Ｉ
：ｌ 、；
・ １Fig. 1 is a front view of the device with the operating device of the kneading section omitted, Fig. 2 is a cross-sectional view taken along the line AA in Fig. 1, and Fig. 3 is a pine surger equipped with the device. FIG. 1...Machine housing, 2...Bottom plate, 3, 3'.
...Support plate, 4...Electric motor, 5...
...Reducer, 6...Driving shaft, 7...Screw shaft, 8...Cylinder shaft, 9...Nut, 10
... Rotating axis, 12 ... Motion rod, 12'
...Grip, 13...Switch, 14
...Operating rod, '15...Operating rod, 16
... Protruding piece, 17 ... Hole, 18.19.
...Stone/<-7°)2・ :1 ′°″] (:;: i:Bow:I :l,; ・1
Claims (1)
の支持板を対設し、該板に減速機を連設した電動機を揺
動可能に枢着し、該電話機の原動軸に螺軸を縦長方向へ
接続し、該螺軸の回転により昇降する筒軸を上端に螺着
し、該筒軸の上端は上記機筺の上段に横設した回転軸に
連結し、該回転軸は両端部を機筺外に突出して延長部を
形成し゛ 該延長部に前方へ突出した一対の運動
杆の下端をそれぞれ固着し、前記筒軸の昇降はスイッチ
操作で行うように構成したことを特徴とする椅子式マツ
サージ機に付設し腕引伸ばし装置。 ５A pair of support plates are provided oppositely on one bottom plate of the machine housing that houses the actuating device of the massaging section, and a motor with a speed reducer is pivotally mounted on the plates so as to be able to swing. A screw shaft is connected in the longitudinal direction to the screw shaft, and a cylindrical shaft that moves up and down by the rotation of the screw shaft is screwed onto the upper end. Both ends of the shaft protrude outside the machine casing to form an extension. The lower ends of a pair of moving rods protruding forward are respectively fixed to the extension, and the cylindrical shaft is raised and lowered by a switch operation. An arm-stretching device attached to a chair-type pine surge machine. 5
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19741681U JPS5898917U (en) | 1981-12-26 | 1981-12-26 | Arm stretcher attached to chair-type pine surgery machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19741681U JPS5898917U (en) | 1981-12-26 | 1981-12-26 | Arm stretcher attached to chair-type pine surgery machine |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5898917U true JPS5898917U (en) | 1983-07-05 |
| JPS6110667Y2 JPS6110667Y2 (en) | 1986-04-05 |
Family
ID=30110639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19741681U Granted JPS5898917U (en) | 1981-12-26 | 1981-12-26 | Arm stretcher attached to chair-type pine surgery machine |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5898917U (en) |
Cited By (40)
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|---|---|---|---|---|
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7066194B2 (en) | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7270709B2 (en) | 2002-07-17 | 2007-09-18 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
| US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
| US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7416979B2 (en) | 2001-07-25 | 2008-08-26 | Applied Materials, Inc. | Deposition methods for barrier and tungsten materials |
| US7422637B2 (en) | 2002-10-09 | 2008-09-09 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
| US7514358B2 (en) | 2002-03-04 | 2009-04-07 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| US7517775B2 (en) | 2003-10-10 | 2009-04-14 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7540920B2 (en) | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
| US7547952B2 (en) | 2003-04-04 | 2009-06-16 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| US7560352B2 (en) | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
| US7611990B2 (en) | 2001-07-25 | 2009-11-03 | Applied Materials, Inc. | Deposition methods for barrier and tungsten materials |
| US9032906B2 (en) | 2005-11-04 | 2015-05-19 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
| US9209074B2 (en) | 2001-07-25 | 2015-12-08 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
-
1981
- 1981-12-26 JP JP19741681U patent/JPS5898917U/en active Granted
Cited By (60)
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|---|---|---|---|---|
| US7501344B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7465666B2 (en) | 2000-06-28 | 2008-12-16 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7235486B2 (en) | 2000-06-28 | 2007-06-26 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7115494B2 (en) | 2000-06-28 | 2006-10-03 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US9587310B2 (en) | 2001-03-02 | 2017-03-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US9209074B2 (en) | 2001-07-25 | 2015-12-08 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US7416979B2 (en) | 2001-07-25 | 2008-08-26 | Applied Materials, Inc. | Deposition methods for barrier and tungsten materials |
| US7611990B2 (en) | 2001-07-25 | 2009-11-03 | Applied Materials, Inc. | Deposition methods for barrier and tungsten materials |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7494908B2 (en) | 2001-09-26 | 2009-02-24 | Applied Materials, Inc. | Apparatus for integration of barrier layer and seed layer |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7429516B2 (en) | 2002-02-26 | 2008-09-30 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US7514358B2 (en) | 2002-03-04 | 2009-04-07 | Applied Materials, Inc. | Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US6955211B2 (en) | 2002-07-17 | 2005-10-18 | Applied Materials, Inc. | Method and apparatus for gas temperature control in a semiconductor processing system |
| US7588736B2 (en) | 2002-07-17 | 2009-09-15 | Applied Materials, Inc. | Apparatus and method for generating a chemical precursor |
| US7569191B2 (en) | 2002-07-17 | 2009-08-04 | Applied Materials, Inc. | Method and apparatus for providing precursor gas to a processing chamber |
| US7429361B2 (en) | 2002-07-17 | 2008-09-30 | Applied Materials, Inc. | Method and apparatus for providing precursor gas to a processing chamber |
| US7270709B2 (en) | 2002-07-17 | 2007-09-18 | Applied Materials, Inc. | Method and apparatus of generating PDMAT precursor |
| US7066194B2 (en) | 2002-07-19 | 2006-06-27 | Applied Materials, Inc. | Valve design and configuration for fast delivery system |
| US6915592B2 (en) | 2002-07-29 | 2005-07-12 | Applied Materials, Inc. | Method and apparatus for generating gas to a processing chamber |
| US7294208B2 (en) | 2002-07-29 | 2007-11-13 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| US7422637B2 (en) | 2002-10-09 | 2008-09-09 | Applied Materials, Inc. | Processing chamber configured for uniform gas flow |
| US6905737B2 (en) | 2002-10-11 | 2005-06-14 | Applied Materials, Inc. | Method of delivering activated species for rapid cyclical deposition |
| US7540920B2 (en) | 2002-10-18 | 2009-06-02 | Applied Materials, Inc. | Silicon-containing layer deposition with silicon compounds |
| US7204886B2 (en) | 2002-11-14 | 2007-04-17 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
| US7591907B2 (en) | 2002-11-14 | 2009-09-22 | Applied Materials, Inc. | Apparatus for hybrid chemical processing |
| US7402210B2 (en) | 2002-11-14 | 2008-07-22 | Applied Materials, Inc. | Apparatus and method for hybrid chemical processing |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7342984B1 (en) | 2003-04-03 | 2008-03-11 | Zilog, Inc. | Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character |
| US7547952B2 (en) | 2003-04-04 | 2009-06-16 | Applied Materials, Inc. | Method for hafnium nitride deposition |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
| US7517775B2 (en) | 2003-10-10 | 2009-04-14 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7572715B2 (en) | 2004-12-01 | 2009-08-11 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7560352B2 (en) | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
| US7521365B2 (en) | 2004-12-01 | 2009-04-21 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7312128B2 (en) | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
| US7235492B2 (en) | 2005-01-31 | 2007-06-26 | Applied Materials, Inc. | Low temperature etchant for treatment of silicon-containing surfaces |
| US7402534B2 (en) | 2005-08-26 | 2008-07-22 | Applied Materials, Inc. | Pretreatment processes within a batch ALD reactor |
| US7464917B2 (en) | 2005-10-07 | 2008-12-16 | Appiled Materials, Inc. | Ampoule splash guard apparatus |
| US9032906B2 (en) | 2005-11-04 | 2015-05-19 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6110667Y2 (en) | 1986-04-05 |
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