JPS57115875A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS57115875A JPS57115875A JP56001224A JP122481A JPS57115875A JP S57115875 A JPS57115875 A JP S57115875A JP 56001224 A JP56001224 A JP 56001224A JP 122481 A JP122481 A JP 122481A JP S57115875 A JPS57115875 A JP S57115875A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- type
- region
- constitution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain a Schottky barrier diode having small series resistance, by forming a highly resistive semiconductor layer on the surface of a single crystal semiconductor substrate via a low resistance embedded layer, providing a low resistance region on the surface of a part thereof, epitaxially growing the highly resistive semiconductor layer on the surface of a part thereof again, and depositing a metal film thereon. CONSTITUTION:An N<-> type layer 3 is epitaxially grown on a P<-> type Si substrate 1 via an N<+> type embedded layer 2, and an SiO2 film 4 is deposited on the entire surface. Then a window is opened in a part of the film 4, and an N<+> type region 5 reaching the layer 2 is diffused and formed in the exposed layer 3. An N<-> type layer 6 is epitaxially grown only on the surface of the region 5 surrounded by the film 4. Thereafter, an Al metal film 7 is deposited on the layer 6 and edge part of the film 4, and Schottky barrier diode junction 8 is formed at the interface with the layer 6. In this constitution, each impurity concentration of the layers 6 and 5 are individually controlled, and the series resistance can be decreased without impairing the diode characteristics.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56001224A JPS57115875A (en) | 1981-01-09 | 1981-01-09 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56001224A JPS57115875A (en) | 1981-01-09 | 1981-01-09 | Semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57115875A true JPS57115875A (en) | 1982-07-19 |
Family
ID=11495490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56001224A Pending JPS57115875A (en) | 1981-01-09 | 1981-01-09 | Semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57115875A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014011175A (en) * | 2012-06-27 | 2014-01-20 | Canon Inc | Schottky barrier diode and device using the same |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
-
1981
- 1981-01-09 JP JP56001224A patent/JPS57115875A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014011175A (en) * | 2012-06-27 | 2014-01-20 | Canon Inc | Schottky barrier diode and device using the same |
| US9553211B2 (en) | 2012-06-27 | 2017-01-24 | Canon Kabushiki Kaisha | Schottky barrier diode and apparatus using the same |
| JP2017085184A (en) * | 2017-02-14 | 2017-05-18 | キヤノン株式会社 | Schottky barrier diode and device using the same |
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