JPS5522864A - Mask for lithography and its manufacturing method - Google Patents
Mask for lithography and its manufacturing methodInfo
- Publication number
- JPS5522864A JPS5522864A JP9645278A JP9645278A JPS5522864A JP S5522864 A JPS5522864 A JP S5522864A JP 9645278 A JP9645278 A JP 9645278A JP 9645278 A JP9645278 A JP 9645278A JP S5522864 A JPS5522864 A JP S5522864A
- Authority
- JP
- Japan
- Prior art keywords
- defect
- film
- mask
- ion
- exposing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001459 lithography Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000007547 defect Effects 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 230000000903 blocking effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000001678 irradiating effect Effects 0.000 abstract 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
PURPOSE: To improve a blocking operation of a mask and reduce a defect by irradiating an ion against a photoresist layer laminated on a metallic layer.
CONSTITUTION: When a Cr film 2 having a thickness of 3000Å approximately is sputtered to a glass plate 1, a pin-hole exists. If photoresist patterns 3, 3' and 3" are formed by a photograph exposing development process on the film 2, a defect D as thick as 0.25 to 0.5μmϕ in that layer exists as well. The defect D is removed by heating upto 150°C and shakening the resist. The Cr film 2 is etched by utilizing the masks 3, 3' and 3". Thereafter, the resist films 3, 3' and 3" are firmly sticked by injecting an Ar ion of 1015 to 1013 cm-2 at 150KeV. According to such a process, an exposing shield effect of a predetermined pattern portion can be raised and the occurrence of an abnormal pattern due to the defect can also be prevented.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9645278A JPS5522864A (en) | 1978-08-07 | 1978-08-07 | Mask for lithography and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9645278A JPS5522864A (en) | 1978-08-07 | 1978-08-07 | Mask for lithography and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5522864A true JPS5522864A (en) | 1980-02-18 |
Family
ID=14165401
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9645278A Pending JPS5522864A (en) | 1978-08-07 | 1978-08-07 | Mask for lithography and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5522864A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730143A (en) * | 1981-01-09 | 1982-02-18 | Sharp Corp | Record player |
| US6656644B2 (en) | 2000-07-07 | 2003-12-02 | Hitachi Ltd. | Manufacturing method of photomask and photomask |
| US6794207B2 (en) | 2000-07-07 | 2004-09-21 | Renesas Technology Corp. | Method of manufacturing integrated circuit |
-
1978
- 1978-08-07 JP JP9645278A patent/JPS5522864A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5730143A (en) * | 1981-01-09 | 1982-02-18 | Sharp Corp | Record player |
| US6656644B2 (en) | 2000-07-07 | 2003-12-02 | Hitachi Ltd. | Manufacturing method of photomask and photomask |
| US6794207B2 (en) | 2000-07-07 | 2004-09-21 | Renesas Technology Corp. | Method of manufacturing integrated circuit |
| US6846598B2 (en) | 2000-07-07 | 2005-01-25 | Hitachi, Ltd. | Manufacturing method of photomask and photomask |
| US6902868B2 (en) | 2000-07-07 | 2005-06-07 | Renesas Technology Corp. | Method of manufacturing integrated circuit |
| US6936406B2 (en) | 2000-07-07 | 2005-08-30 | Renesas Technology Corp. | Method of manufacturing integrated circuit |
| US6958292B2 (en) | 2000-07-07 | 2005-10-25 | Renesas Technology Corp. | Method of manufacturing integrated circuit |
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