JPH11345824A - Semiconductor device and manufacturing method thereof - Google Patents

Abstract

(57) [PROBLEMS] To provide a highly reliable semiconductor device by eliminating a conduction failure and a short circuit in mounting using a conductive adhesive or an anisotropic conductive material. SOLUTION: One electrode 2 of a semiconductor element 1 and a circuit board 3
One electrode 4 is connected to a bump group composed of a plurality of bumps 5 via a conductive adhesive 6. At this time, the distance between any bump on the same electrode and at least one other bump is within 50 μm. This makes it possible to control the amount and flow of the conductive adhesive, thereby preventing poor conduction and short-circuiting at the connection portion.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a plurality of bumps are used for bonding between the same electrodes in a flip-chip mounting of a semiconductor, and the probability of conduction is increased.

[0002]

2. Description of the Related Art Many methods have been proposed for connecting an electrode arrangement surface of a semiconductor element to a circuit board, and many of them have already been put to practical use. The flip-chip connection method is a kind, and usually uses a bump for connection between an electrode of a semiconductor element and an electrode of a circuit board.

A bump is a structure for physically joining a semiconductor element and both electrodes of a circuit board, and simultaneously makes an electrical connection. As the connection method, a method of bonding with a bump using metal solid phase diffusion or solder, a method of using a bump and a conductive adhesive, a method of using a bump and an anisotropic conductive film, and a method of using a bump and an anisotropic conductive adhesive There are methods to use.

There are various methods for forming bumps, and the shapes thereof are also various. JP-A-5-218133 (Japanese Patent Application No. 4-19766) also discloses
One of them.

FIG. 5 is a partially enlarged cross-sectional view showing a connection portion between electrodes of a conventional semiconductor device which is connected to a bump using a conductive adhesive. In FIG. 5, 1 is a semiconductor element, 2 is an electrode of a semiconductor element, 3 is a circuit board, 4 is an electrode of a circuit board,
Reference numeral 5 denotes a bump, and 6 denotes a conductive adhesive.

FIG. 6 is a partially enlarged cross-sectional view of a connection portion between electrodes of a conventional semiconductor device connected by using an anisotropic conductive material containing conductive particles and bumps. In FIG. 6, 1 is a semiconductor element, 2 is an electrode of a semiconductor element, 3 is a circuit board, 4 is an electrode of a circuit board, 5 is a bump, 8 is an anisotropic conductive film, and 9 is an anisotropic conductive film. Shows conductive particles.

[0007]

When a method of transferring the conductive adhesive to the tip of the bump and connecting the electrodes is adopted, there is a problem in controlling the amount of the conductive adhesive transferred. At this time, if the amount of the conductive adhesive is small, the connection may be insufficient.

The method described in JP-A-5-218133 (Japanese Patent Application No. 4-19766) is a mounting method using a columnar bump and a conductive adhesive. However, since the tip is flat, there has been a problem that the transfer amount of the conductive adhesive is reduced.

[0009] On the other hand, when a method is used in which the tip of the bump is connected with the conductive adhesive applied to the electrode side by printing or the like, if there is a variation in the height of the bump, the connection position of the high bump may be reduced. The adhesive may protrude from the electrode portion, causing a problem such as migration or a short circuit with another electrode.

When a mounting method using an anisotropic conductive material containing a bump and conductive particles is used, it is necessary to make the height of the bump uniform. If there is a bump whose height is lower than those of other bumps, the bump is not connected to an electrode to be connected.

An object of the present invention is to solve the above-mentioned problems of the prior art. In a semiconductor device connected by using a bump and a conductive adhesive, the transfer amount of the conductive adhesive is controlled. Facilitate and stabilize the transfer amount, and prevent the conductive adhesive from protruding even if the height of the bumps fluctuates, causing problems such as migration and short-circuit with other electrodes. Accordingly, an object of the present invention is to provide a semiconductor device having a highly reliable electric connection portion.

Further, the present invention is to reduce a decrease in connection probability in a semiconductor device connected using a bump and an anisotropic conductive material containing conductive particles even if the height of the bump varies. Accordingly, an object of the present invention is to provide a semiconductor device having a highly reliable electric connection portion.

[0013]

The present invention has the following configuration to achieve the above object.

[0014] The semiconductor device according to the first configuration of the present invention comprises:
In a semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected to each other with a conductive adhesive via bumps, one electrode of the semiconductor element and one electrode of the circuit board may have a plurality of bumps. Are connected by a bump group composed of:

According to the present invention, by adopting the above configuration,
In a semiconductor device in which a conductive adhesive is transferred to the bump tip and electrically connected, one electrode is connected to a bump group in which a plurality of bumps are provided close to each other. Since the conductive adhesive enters the gap between the adjacent bumps, the amount of the conductive adhesive to be transferred can be larger and stabilized than in the conventional single columnar bump structure. Therefore, a semiconductor device having a highly reliable electric connection portion can be obtained.

Further, according to the present invention, in the semiconductor device having the above configuration, a bump is connected by applying a conductive adhesive to the electrode side, a plurality of bumps are connected to one electrode by connecting a plurality of bumps to each other. Since it is performed with the bump group provided, even if there is variation in height between the bumps constituting the bump group or between other bump groups, the conductive adhesive protruding from the high bump is Since they are taken into the gap between the adjacent bumps in the bump group, they do not protrude from the bump group and cause migration or short-circuit with other electrodes. Therefore, a semiconductor device having a highly reliable electric connection portion can be obtained.

In the first configuration, it is preferable that a distance between an arbitrary bump belonging to the bump group and at least one other bump belonging to the same bump group is within 50 μm. According to such a preferred configuration, the amount of the conductive adhesive taken into the gap between the bumps is optimized. Therefore, in a semiconductor device in which the conductive adhesive is transferred to the bump tip and electrically connected, the transferred conductive adhesive is used. In a semiconductor device in which the amount of the conductive adhesive can be increased and stabilized, and the conductive adhesive is applied to the electrode side to connect the bumps, the conductive adhesive that protrudes from the high bumps is preferably used. Can be captured. Therefore, a semiconductor device having higher reliability of the electrical connection portion can be obtained.

In the first configuration, it is preferable that a conductive adhesive is present between the bumps constituting the bump group. According to such a preferred configuration, in a semiconductor device in which the conductive adhesive is transferred to the tip of the bump and electrically connected, the amount of the conductive adhesive to be transferred is large and stabilized, and the electrode In a semiconductor device that connects a bump by applying a conductive adhesive on the side,
Since the conductive adhesive protruding from the high bump is taken in favorably, a semiconductor device having higher reliability of the electrical connection portion can be obtained.

Further, a method of manufacturing a semiconductor device according to the present invention
A method of manufacturing a semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected to each other with an electrically conductive adhesive via a bump, wherein the bump group includes a plurality of bumps on one electrode of the semiconductor element. After forming, the bump group and one electrode of the circuit board are electrically connected via a conductive adhesive.

A method of manufacturing a semiconductor device according to another aspect of the present invention is a method of manufacturing a semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected with a conductive adhesive via bumps. And forming a bump group including a plurality of bumps on one electrode of a circuit board, and then electrically connecting the bump group and one electrode of the semiconductor device via a conductive adhesive. It is characterized by.

According to the method of manufacturing a semiconductor device having each of the above structures, the semiconductor device according to the first structure having the above effects can be manufactured efficiently.

Further, in the semiconductor device according to the second configuration of the present invention, the electrodes of the semiconductor element and the electrodes of the circuit board are electrically connected to each other by an anisotropic conductive material having conductive particles via bumps. In the semiconductor device, one electrode of the semiconductor element and one electrode of the circuit board are connected by a bump group including a plurality of bumps.

According to the present invention, with the above configuration,
In a semiconductor device that is electrically connected using an anisotropic conductive material, one electrode is connected by a plurality of bumps.
Even if there is variation in the height of the bumps within the bump group, it is possible to suppress the influence of the variation, and it is possible to prevent a decrease in the probability of connection with the electrode to be connected. Therefore, a semiconductor device having a highly reliable electric connection portion can be obtained.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.

(Embodiment 1) In Embodiment 1, an electrical connection structure of a semiconductor device connected to a bump using a conductive adhesive will be described.

FIG. 1 is a partially enlarged cross-sectional view of a connection portion between electrodes of the semiconductor device according to the first embodiment. In FIG. 1, reference numeral 1 denotes a semiconductor element, 2 denotes an electrode of the semiconductor element, 3 denotes a circuit board, 4 denotes an electrode of the circuit board, 5 denotes a bump, and 6 denotes a conductive adhesive.

As shown in the figure, in the semiconductor device according to the present embodiment, one electrode 2 of the semiconductor element 1 and one electrode 4 of the circuit board 3 are connected via a bump group composed of a plurality of bumps 5. And electrically connected by a conductive adhesive 6.

The connection method of the connection portion according to the present embodiment will be described below.

First, as shown in FIG. 2, a plurality of bumps 5 are formed on the same electrode 2 of the semiconductor element 1. At this time, it is preferable that the bumps are formed close to each other so that the distance between any one of the bumps and at least one other bump on the same electrode is within 50 μm.

Then, as shown in FIG. 3, the tip of the bump 5 of the semiconductor element 1 is brought into contact with the flat plate 7 coated with the conductive adhesive 6, and the conductive adhesive 6 is transferred to the bump 5.
At this time, a reliable electrical connection can be realized by appropriately controlling the amount of the conductive adhesive taken in between the bumps 5.

After that, the semiconductor element 1 and the circuit board 3 are properly aligned, and then the bumps 5 are connected to the electrodes 2 and 4 via the conductive adhesive 6.

Thus, the semiconductor device having the connection portion shown in FIG. 1 is completed.

Here, the bump 5 is connected to the electrode 2 of the semiconductor element 1.
Although the description has been given of the form in which the bump is formed on the side, the bump may be formed on the electrode 4 of the circuit board 3, or may be formed on both the electrodes 2 and 4 of the semiconductor element 1 and the circuit board 3. In each case, the same effect is obtained.

Although the method in which the conductive adhesive 6 is applied to the flat plate 7 and transferred to the tip of the bump 5 is used here, the same effect can be obtained by using a supply method such as printing.

Further, a conductive adhesive may be applied to the electrodes 4 of the circuit board 3 instead of the bumps 5.

(Embodiment 2) In Embodiment 2, an electrical connection structure of a semiconductor device connected by using an anisotropic conductive material having bumps and conductive particles will be described.

FIG. 4 is a partially enlarged cross-sectional view of a connection portion between electrodes of the semiconductor device according to the second embodiment. In FIG. 4, 1 is a semiconductor element, 2 is an electrode of a semiconductor element, 3 is a circuit board, 4 is an electrode of a circuit board, 5 is a bump, 8 is an anisotropic conductive film, and 9 is an anisotropic conductive film. Shows conductive particles.

As shown in the figure, in the semiconductor device according to the present embodiment, one electrode 2 of the semiconductor element 1 and one electrode 4 of the circuit board 3 are connected via a bump group composed of a plurality of bumps 5. Electrically connected by an anisotropic conductive film 8 having conductive particles 9.

The connection method of the connection portion according to the present embodiment will be described below.

First, a plurality of bumps 5 are formed on the same electrode of the semiconductor device 1.

Next, the surface of the semiconductor element 1 on which the bumps 5 are to be formed is appropriately positioned on the anisotropic conductive film 8 attached to the circuit board 3 and then thermocompression-bonded.

Thus, the semiconductor device having the connection shown in FIG. 4 is completed.

Here, the bump 5 is connected to the electrode 2 of the semiconductor element 1.
Although the description has been given of the form formed on the side, the bumps may be formed on the electrodes 4 of the circuit board 3 or may be formed on both the electrodes 2 and 4 of the semiconductor element 1 and the circuit board 3. In each case, the same effect is obtained.

Although the anisotropic conductive film 8 is attached to the circuit board 3 here, the same effect can be obtained by attaching the anisotropic conductive film 8 to the electrode surface 2 of the semiconductor element 1 for mounting.

Although the film-like anisotropic conductive material is used here, the same effect can be obtained by using a paste-like material.

[0046]

According to the present invention, the following effects can be obtained.

According to the semiconductor device of the first configuration of the present invention, in mounting using the conductive adhesive, by connecting the electrodes using a plurality of bumps, the amount and flow of the conductive adhesive can be improved. And a highly reliable semiconductor device can be obtained.

Further, according to the method of manufacturing a semiconductor device of the present invention, it is possible to efficiently manufacture the semiconductor device according to the first configuration having the above effects.

Further, according to the semiconductor device of the second configuration of the present invention, in mounting using an anisotropic conductive material containing conductive particles, by connecting the electrodes using a plurality of bumps, It is possible to improve the reduction in the connection probability due to the variation in the height of the bump, and to obtain a highly reliable semiconductor device.

[Brief description of the drawings]

FIG. 1 is a partially enlarged sectional view of a connection portion between electrodes of a semiconductor device according to a first embodiment of the present invention;

FIG. 2 is a partially enlarged cross-sectional view showing one process of a method of manufacturing the semiconductor device shown in FIG.

FIG. 3 is a partially enlarged cross-sectional view showing one process of a method of manufacturing the semiconductor device shown in FIG.

FIG. 4 is a partially enlarged cross-sectional view of a connection portion between electrodes of a semiconductor device according to a second embodiment of the present invention;

FIG. 5 is a partially enlarged cross-sectional view of a connection portion between electrodes of a flip-chip connected semiconductor device using a conventional conductive adhesive.

FIG. 6 is a partially enlarged cross-sectional view of a connection portion between electrodes of a flip-chip connected semiconductor device using a conventional anisotropic conductive film.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 semiconductor element 2 electrode of semiconductor element 3 circuit board 4 electrode of circuit board 5 bump 6 conductive adhesive 7 flat plate 8 anisotropic conductive film 9 conductive particle

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshihiro Bessho 1006 Kazuma Kadoma, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (8)

[Claims] In a semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected to each other with a conductive adhesive via bumps, one electrode of the semiconductor element and one electrode of the circuit board are provided. Are connected by a bump group composed of a plurality of bumps. 2. An arbitrary bump belonging to the bump group,
2. The semiconductor device according to claim 1, wherein a distance from at least one other bump belonging to the same bump group is within 50 μm. 3. The semiconductor device according to claim 1, wherein a conductive adhesive is present between the bumps forming the bump group. 4. A method for manufacturing a semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected to each other with a conductive adhesive via a bump, wherein a plurality of bumps are formed on one electrode of the semiconductor element. A method for manufacturing a semiconductor device, comprising: forming a bump group to be formed; and electrically connecting the bump group to one electrode of a circuit board via a conductive adhesive. 5. A method for manufacturing a semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected to each other with a conductive adhesive via bumps, wherein a plurality of bumps are formed on one electrode of the circuit board. A method for manufacturing a semiconductor device, comprising: forming a bump group to be formed; and electrically connecting the bump group to one electrode of the semiconductor device via a conductive adhesive. 6. An arbitrary bump belonging to the bump group,
The method of manufacturing a semiconductor device according to claim 4, wherein a distance from at least one other bump belonging to the same bump group is within 50 μm. 7. The method of manufacturing a semiconductor device according to claim 4, wherein a conductive adhesive is present between the bumps constituting the bump group. 8. A semiconductor device in which an electrode of a semiconductor element and an electrode of a circuit board are electrically connected via an anisotropic conductive material having conductive particles via bumps. A semiconductor device, wherein one electrode of a circuit board is connected to a bump group including a plurality of bumps.