JPH03120570U - - Google Patents
Info
- Publication number
- JPH03120570U JPH03120570U JP2993390U JP2993390U JPH03120570U JP H03120570 U JPH03120570 U JP H03120570U JP 2993390 U JP2993390 U JP 2993390U JP 2993390 U JP2993390 U JP 2993390U JP H03120570 U JPH03120570 U JP H03120570U
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- heater
- melted
- inner circumferential
- heat insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims description 6
- 239000002994 raw material Substances 0.000 claims description 2
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
第１図は本考案装置の模式的縦断面図、第２図
は遮蔽体の拡大平面図、第３図は第２図の−
線による断面図、第４，５図は一般的なＣＺ法、
溶融層法の説明図、第６図は溶融層法での充填材
料の相変化を示す一次元モデル図、第７図は坩堝
の温度制御の内容を示す説明図、第８図ａ，ｂは
第４，５図に示すＣＺ法、溶融層法を実施する装
置の半截栽断図である。
１……坩堝、２……ヒータ、３……保温壁、４
……プルチヤンバ、６……引上げ軸、７……種結
晶、８……単結晶、１０……チヤンバ、９……遮
蔽体、９ａ……内筒、９ｂ……外筒、９ｃ……空
間層、１５……ホルダ、１８……固体原料供給器
。
Fig. 1 is a schematic vertical sectional view of the device of the present invention, Fig. 2 is an enlarged plan view of the shield, and Fig. 3 is the same as Fig. 2.
Cross-sectional view by line, Figures 4 and 5 are general CZ method,
An explanatory diagram of the fused bed method, Figure 6 is a one-dimensional model diagram showing the phase change of the filling material in the fused bed method, Figure 7 is an explanatory diagram showing the details of crucible temperature control, and Figures 8 a and b are 6 is a half-cut sectional view of an apparatus for implementing the CZ method and the fused layer method shown in FIGS. 4 and 5. FIG. 1... Crucible, 2... Heater, 3... Heat retention wall, 4
... Plug chamber, 6 ... Pulling axis, 7 ... Seed crystal, 8 ... Single crystal, 10 ... Chamber, 9 ... Shielding body, 9a ... Inner cylinder, 9b ... Outer cylinder, 9c ... Space layer , 15... holder, 18... solid raw material feeder.
Claims (1)
配設した坩堝内の結晶用原料を、前記ヒータにて
上側から下側へ向けて溶融しつつ、その溶融液か
ら結晶を引き上げて成長させる装置において、 前記坩堝内における溶融液面の上方であつて、
坩堝の上部内周壁と結晶引上げ領域との間に坩堝
の上部内周壁、ヒータ及び保温壁から結晶引上げ
領域側への輻射熱を遮断する遮蔽体を設けたこと
を特徴とする結晶成長装置。[Scope of Claim for Utility Model Registration] A raw material for crystallization in a crucible, which is surrounded by a heater and a heat insulating wall located outside the crucible, is melted from the upper side to the lower side by the heater, and the molten liquid is melted by the heater. In an apparatus for growing crystals by pulling them from the crucible, above the melt surface in the crucible,
A crystal growth apparatus characterized in that a shield is provided between the upper inner circumferential wall of the crucible and the crystal pulling region to block radiant heat from the upper inner circumferential wall of the crucible, the heater, and the heat insulating wall toward the crystal pulling region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993390U JPH03120570U (en) | 1990-03-24 | 1990-03-24 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2993390U JPH03120570U (en) | 1990-03-24 | 1990-03-24 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03120570U true JPH03120570U (en) | 1991-12-11 |
Family
ID=31532676
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2993390U Pending JPH03120570U (en) | 1990-03-24 | 1990-03-24 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03120570U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002538064A (en) * | 1999-02-26 | 2002-11-12 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Heat shield device for crystal pulling device |
-
1990
- 1990-03-24 JP JP2993390U patent/JPH03120570U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002538064A (en) * | 1999-02-26 | 2002-11-12 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | Heat shield device for crystal pulling device |
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