JPH0955456A - Semiconductor device cooling structure - Google Patents

Abstract

(57) Abstract: A heat dissipation structure for a semiconductor device is provided which can effectively dissipate heat generated by the semiconductor device with high thermal conductivity. A silicone rubber (12) is impregnated into a metal net (11), and both side portions of the metal net (11) are bent into a substantially C-shaped cross section to form a heat conductive sheet (10). The heat conductive sheet (10) and the heat sink (2). And the heat conductive sheet 10 is bent by the deformation of the wire net 11 and the silicone rubber 12 as a whole, and the wire net 11 and the heat transfer sheet 10 are bent.
And the silicone rubber 12 are in contact with the semiconductor device 1 and the heat sink 2, respectively.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device cooling structure, and more particularly to a semiconductor device cooling structure useful for cooling a semiconductor device having a high output and a large amount of heat generation, such as a power transistor, a microprocessor, an optical communication module. .

[0002]

2. Description of the Related Art As is well known, a heat sink having a fin for heat radiation is provided in contact with a semiconductor device having a high output and a large amount of heat generation, and the heat sink radiates heat from the semiconductor device. Such a heat sink is usually made of a metal such as aluminum or an aluminum alloy, or a material having a high thermal conductivity such as ceramics, because the higher the thermal conductivity, the better the cooling efficiency. However, in a heat sink made of a hard high thermal conductivity material, an air gap is formed at a contact portion with a semiconductor device due to surface roughness or the like, and this air gap deteriorates thermal conductivity and impairs heat dissipation. There was a problem.

Therefore, in recent years, for the purpose of preventing the occurrence of an air gap, a rubber having a high proportion of a filler having a high thermal conductivity mixed between the semiconductor device 1 and the heat sink 2 as shown in FIG. A cooling structure in which the sheet 3 is interposed (for convenience, referred to as prior art 1), and a cooling structure in which a grease having a high thermal conductivity filler mixed and dispersed at a high ratio is applied between the semiconductor device and the heat sink 2 (for convenience) , Which is referred to as Prior Art 2). In addition,
In FIG. 10, 4 is a socket, 5 is a circuit board, and 6 is an attachment for fixing the heat sink 2 to the semiconductor device 1.

[0004]

However, even with the cooling structures of the prior arts 1 and 2 described above, satisfactory thermal conductivity cannot be obtained, and measures for increasing the size of the heat sink and devising the shape of the fins are taken. Inevitably, there was no choice but to increase the overall size and manufacturing costs. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a heat dissipation structure for a semiconductor device, which can obtain high thermal conductivity and can effectively dissipate heat generated by the semiconductor device. .

[0005]

In order to achieve the above object, a cooling structure for a semiconductor device according to the invention of claim 1 has an elastomer in which a filler having a high thermal conductivity is dispersed at a high compounding ratio and a high thermal conductivity. A metal mesh made of metal having a specific ratio, and a part of the metal mesh is exposed on the front and back surfaces to form a heat conductive sheet. The heat conductive sheet is provided so that the metal mesh exposed on one surface contacts the semiconductor device. The invention according to claim 2 provides the semiconductor device cooling structure according to claim 1,
It is configured by bending the heat conductive sheet and filling the bent inner portion with the elastomer.

Further, in the cooling structure for a semiconductor device according to a third aspect of the invention, a sheet body made of an elastomer in which a filler having a high thermal conductivity is dispersed at a high compounding ratio can be integrally deformed with the sheet body. A metal heat transfer body having a high thermal conductivity was penetrated through the front and back sides to form a heat transfer sheet, and the heat transfer sheet was provided so that the metal heat transfer body exposed on one surface was in contact with the semiconductor device.

The invention according to claim 4 is the same as claim 1
Alternatively, in the cooling structure for a semiconductor device according to claim 3,
The heat conductive sheet is bent and is interposed between the semiconductor device and the heat sink so that both the heat sink and the semiconductor device are in contact with the wire mesh (metal heat transfer body). According to a fifth aspect of the present invention, in the semiconductor device cooling structure according to the first to fourth aspects, an elastomer gel layer is formed on at least one surface of the heat conductive sheet.

According to a sixth aspect of the present invention, there is provided a semiconductor device cooling structure in which a metal net made of a metal having a high thermal conductivity is bent into a substantially wavy shape to alternately form flat connection portions and heat radiation fin portions. Then, a portion near the connecting portion of the wire net is covered with an elastomer in which a filler having a high thermal conductivity is dispersed so that the connecting portion is exposed to form a radiator, and the radiator is exposed from the elastomer. The connection portion of was provided so as to be in contact with the semiconductor device.

In the cooling structure for a semiconductor device according to claims 1 and 6, silver, aluminum, and
Woven with a metal wire such as copper or an alloy thereof, and preferably a metal wire with a wire diameter of 20 μm to 200 μm.
~ 200 mesh woven wire mesh, which is stable as an elastomer at high temperature and has little thermal aging and high thermal conductivity, preferably silicone rubber or silicone gel is a metal such as silver, aluminum or aluminum alloy as a filler to be mixed with the elastomer. , Or alumina, silicon nitride,
A powder of boron nitride, aluminum nitride, ceramics or the like having a high thermal conductivity of 0.05 cal / sec · ° C · cm or more is used. Then, the heat conductive sheet is formed by bending the wire mesh and filling the elastomer between them, thereby bending the wire mesh between the elastomers.
It is constituted by bending the wire mesh into a wave shape and coating the elastomer on both the front and back surfaces, or by filling the elastomer in a wire mesh formed in a tubular shape.

In the cooling structure for a semiconductor device according to a third aspect, a metal foil or metal wire made of silver, aluminum, copper or an alloy thereof is used as the metal heat conductor, and the heat conductive sheet is made of the metal foil and the elastomer. By stacking multiple layers,
Alternatively, the sheet body is formed by penetrating a large number of metal wires on the front and back sides so that both ends thereof protrude.

[0011]

According to the cooling structure for a semiconductor device of the first and third aspects, in the heat transfer sheet, the wire mesh and the metal heat transfer member are deformed together with the elastomer to come into contact with the semiconductor device at an appropriate pressure, and The heat generated is conducted through the elastomer, the wire mesh and the metal heat transfer body, and is radiated through the heat transfer sheet. That is, the heat of the semiconductor device is radiated through both the elastomer containing a filler and having a high thermal conductivity and the wire net or the metal heat transfer body having a high thermal conductivity. Therefore, the heat of the semiconductor device can be effectively dissipated.

According to the sixth aspect of the semiconductor device cooling structure, the heat generated by the semiconductor device is conducted to the heat radiator from the connection portion between the elastomer and the wire mesh, and the heat is dissipated from the heat radiation fin portion. Therefore, in addition to the action of the cooling structure according to claims 1 and 3, it also functions as a heat sink,
The number of parts can be reduced by omitting the heat sink.

In the cooling structure of the semiconductor device according to the second aspect, since the heat conductive sheet is bent and the inner side portion of the bent is filled with the elastomer, it can be largely elastically deformed, and the heat conductive sheet can be deformed by the semiconductor device or the like. It can be surely brought into close contact. Further, in the cooling structure for a semiconductor device according to claim 4, since the heat conductive sheet is bent and is interposed between the semiconductor device and the heat sink, the bending of the bent portion improves the adhesion, and the inside of the bend is improved. It is also possible to radiate heat, and more excellent heat dissipation can be obtained. Further, in the cooling structure for a semiconductor device according to claim 5, since the gel layer of the elastomer absorbs the surface roughness of the semiconductor device and the heat sink to prevent the generation of the air layer, high heat dissipation and excellent cooling performance are achieved. To be done. Further, the gel layer of the elastomer can be preformed in advance, which facilitates the assembling work.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic sectional view showing a cooling structure of a semiconductor device according to a first embodiment of the invention described in claim 1. In the figure, 10 is a heat conductive sheet, and the heat conductive sheet 10 is configured by embedding a metal net 11 in a silicone rubber (elastomer) 12. This heat conductive sheet 10
Is sandwiched between the semiconductor device 1 and the heat sink 2 with an appropriate pressure, and the wire netting 11 is deformed together with the silicone rubber 12 so as to be bent as a whole. And the heat sink 2 (see FIG. 10 described above).

In the wire net 11, the horizontal wire 11a and the vertical wire 11b are both made of a metal having a high thermal conductivity such as copper, copper alloy, and aluminum, and the wires 11a and 11b are exposed on the silicone rubber 12 at the overlapping portion. Semiconductor device 1 on one side
Then, the other surface comes into contact with the heat sink 2. This wire net 11
Preferably has a wire diameter of 20 to 20 on the wires 11a and 11b.
Woven to 50-200 mesh using 0 μm copper wire. The silicone rubber 12 contains a filler such as aluminum powder in an amount of 30% by weight to 60% by weight and has a high thermal conductivity.

In the first embodiment, the semiconductor device 1
The heat conductive sheet 10 is sandwiched between the heat sink 2 and the heat sink 2 (interposed in place of the rubber sheet in FIG. 10), and the wire mesh 11 and the silicone rubber 12 of the heat conductive sheet 10 are elastically deformed respectively and the appropriate pressure is applied. With semiconductor device 1 and heat sink 2
And contact. Therefore, the heat of the semiconductor device 1 is conducted to the heat sink 2 through both the metal net 11 and the silicone rubber 12 having high thermal conductivity, and the heat dissipation of the semiconductor device 1 is effectively performed.

FIG. 2 is a schematic sectional view of a cooling structure for a semiconductor device according to the second embodiment of the invention. In this second mode and other modes described later, the same parts as those in the above-mentioned first mode are designated by the same reference numerals and the description thereof will be omitted. In the second embodiment, the heat conductive sheet 10 is coated with silicone rubber 12 on the front and back of the wire net 11 bent in a substantially wave shape, and the bent corners of the wire net 11 are coated so as to project from the surface of the silicone rubber 12. Configured. In the second embodiment, since the wire net 11 of the heat conductive sheet 10 is bent in a wave shape, the wire net 11 is easily deformed. Therefore, the wire net 11 surely comes into contact with the semiconductor device 1 and the like, and more excellent heat dissipation is obtained.

3a and 3b show a cooling structure of a semiconductor device according to a third aspect of the present invention. FIG. 3a is a schematic sectional view and FIG. 3b is a perspective view of a heat conductive sheet. In the third mode, both side portions of the heat conductive sheet 10 of the first mode (FIG. 1) described above are bent to form a C-shaped cross section,
The semiconductor device 1 and the heat sink 2 are sandwiched and interposed. The third mode is the heat transfer sheet 10
Causes a large amount of bending, so that the heat conductive sheet 10 has excellent adhesion to the semiconductor device 1 and the heat sink 2 and a higher thermal conductivity can be obtained. Since it can radiate heat, it can radiate more effectively.

The heat transfer sheet 10 according to the third mode is manufactured as follows. First, a wire net 11 is fixed on a Teflon sheet containing glass fiber, and the wire net 1
Liquid silicone rubber 12 is applied and impregnated on 1 in a manner similar to screen printing, and then bent, and then the bent wire net 11 impregnated with silicone rubber 12 is heated and cured in a heating furnace or the like to complete.

4a, 4b and 4c show in alphabetical order the manufacturing process of the heat conductive sheet used for the cooling structure of the semiconductor device according to the fourth aspect of the present invention, wherein a is a plan view and b is a plan view. , C are perspective views. In the fourth mode, the heat transfer sheet 10 of the first mode (FIG. 1) or the heat transfer sheet 10 of the second mode (FIG. 2) described above is used, and the four corners of the heat transfer sheet 10 are used. The part is bent and sandwiched between the semiconductor device 1 and the heat sink 2.

Then, the heat transfer sheet 1 of the fourth embodiment
0 is manufactured as follows. First, the square wire mesh 11 is bent in a wave shape, the bent metal wire 11 is impregnated with the silicone rubber 12, and then the wire wire 11 is heated and cured in a heating furnace. Next, after coating the metal net 11 with the silicone rubber 12 by using a knife coater or the like, a fold line (broken line in FIG. 4a) connecting the midpoints of the adjacent sides of the four corners of the metal net 11 using a mold. )) (See FIGS. 4a and 4b), and then, the bent wire net 11 is heated and pressed by a heat press or the like to cure the silicone rubber 12 to complete the heat conductive sheet 10 (FIG. 4c). .

FIG. 5 is a schematic cross-sectional view of a heat transfer sheet used in a cooling structure for a semiconductor device according to a fifth aspect of the present invention. In the fifth embodiment, the heat conductive sheet 10 is configured by joining the plurality of division units 40 in a planar shape. The division unit 40 is configured by loosely inserting the circular pipe body 14 made of the wire mesh 11 into the square pipe body 13 made of the wire mesh 11, and filling the silicone rubber 12 between the inner surface of the square pipe body 13 and the outer surface of the circular pipe body 14. To be done. And
Silicone gel layers 15 are formed on both front and back surfaces of the heat conductive sheet 10 from a silicone gel having a high thermal conductivity containing a filler similar to that of the silicone rubber 12.

Also in the fifth embodiment, the heat conductive sheet 10 is sandwiched between the semiconductor device 1 and the heat sink 2, and the silicone gel layer 15 is further provided on the front and back sides of the heat conductive sheet 10. The silicone gel layer 15 absorbs the surface roughness of the semiconductor device 1 and the heat sink 2 to prevent the formation of an air layer. Therefore, high heat dissipation and excellent cooling performance are achieved. In particular, the silicone gel layer 15
Since it can be preformed in advance, it is possible to easily perform an assembling work without applying a work such as coating when mounting the heat sink 2, and the circular pipe body 14
The heat can be dissipated internally, and the heat can be dissipated more effectively.

FIG. 6 is a schematic cross-sectional view of a heat transfer sheet used in the cooling structure for a semiconductor device according to the sixth aspect of the present invention. In the sixth embodiment, the silicone rubber 12 is provided inside the strip-shaped wire mesh 11 which is bent in a U-shaped cross section.
To form a division unit 40, and a plurality of the division units 40 are joined to form the heat conductive sheet 10. And even with this cooling structure, the heat conductive sheet 1
A silicone gel layer 15 is formed on the front and back sides of 0, and the silicone gel layer 15 absorbs the surface roughness of the semiconductor device 1 and the heat sink 2 to prevent the formation of an air layer.

FIG. 7 is a schematic cross-sectional view of a heat transfer sheet used for a cooling structure of a semiconductor device according to a seventh embodiment of the invention. In the seventh embodiment, like the first embodiment described above, the wire net 11 is bent into a substantially C-shape, and the wire net 11 is impregnated with the silicone gel 15 so as to be interposed between the semiconductor device 1 and the heat sink 2. It is something to intervene.

8a and 8b show a cooling structure for a semiconductor device according to an embodiment of the present invention.
Is a schematic perspective view, and FIG. 8b is a partially enlarged front sectional view. In this embodiment, the wire netting 11 is formed by alternately bending the flat connecting portions 19a and the heat radiating fin portions 19b, and the connecting portions 19a of the bent wire netting 11 are embedded in the silicone rubber layer 12. The heat dissipating body 19 is configured as described above.

Also in this embodiment, the heat radiator 19 is provided on the upper surface of the semiconductor device 1 by closely adhering the silicone rubber layer 12, and the connecting portion 19a of the metal net 11 of the heat radiator 19 is exposed from the silicone rubber layer 12. Then, the heat directly contacts the upper surface of the semiconductor device 1 with a large contact area, and the heat conducted through the metal net 11 and the silicone rubber layer 12 is radiated from the heat radiation fin portion 19b. Therefore, the semiconductor device 1 can be effectively cooled.

In this embodiment, it is also possible to interpose an elastomer gel such as a silicone gel containing the filler between the silicone rubber layer 12 and the semiconductor device 1, and Silicone rubber layer 1
It is also possible to configure 2 itself as the gel layer 15 of a heat conductive elastomer such as silicone gel.

FIG. 9 shows a heat conductive sheet used for a cooling structure of a semiconductor device according to an aspect of the present invention. In this configuration, a plurality of convex portions 72 are formed in a substantially wavy shape on both the front and back surfaces of the sheet body 71 made of an elastomer, and the sheet body 71 penetrates the front and back surfaces and is exposed on the top surface of the convex and concave portions 72 on the front and back surfaces. The metal foil 73 is embedded, and the silicone gel layer 15 is formed on both front and back surfaces of the sheet body 71 to form the heat conductive sheet 10.

Similar to the above-mentioned respective embodiments, the seat body 71
Is a silicone rubber in which a filler having a high thermal conductivity is dispersed, the metal foil 73 is made of a metal having a high thermal conductivity such as copper, and the silicone gel layer 15 is a silicone gel in which a filler having a high thermal conductivity is dispersed. Composed of. In this embodiment, the metal foil 73 can be replaced with a flexible thin wire made of metal having high conductivity.

Even in the cooling structure of this embodiment, the heat conductive sheet 10 is interposed between the semiconductor device 1 and the heat sink 2 in a pressed state, and the sheet body 71 and the metal foil 73 are deformed, and the sheet body 71 is deformed. And the metal foil 73 come into contact with the semiconductor device 1 and the heat sink 2 with appropriate pressures. Therefore, the heat of the semiconductor device 1 is quickly conducted to the heat sink 2, and the heat dissipation of the semiconductor device 1 is effectively performed.

The heat conductive sheet 10 of this form is
After laminating the silicone rubber layer and the metal foil 73 in multiple layers, the blade is cut into a sheet shape by a cutting line inclined with respect to the laminating direction using a corrugated cutter or the like, that is, the sheet body 71 is formed, and then the sheet is formed. It can be manufactured by forming the silicone gel layer 15 on the front and back of the main body 71. Therefore, the heat conductive sheet 10 can be easily manufactured, and the heat conductive sheet 1
0 can be provided at low cost.

In each of the above-mentioned embodiments, silicone rubber is used as the elastomer except for the embodiment shown in FIG. 7, but silicone gel can be used instead of silicone rubber. That is, in the embodiment shown in FIGS. 1, 2, 4, 5, etc., the heat conductive sheet 10 can be configured by impregnating and filling the metal net 11 with silicone gel. Further, in each of the above-described embodiments, the one using the heat sink 2 is illustrated except for the example of FIG. 8, but it is also possible to perform the heat dissipation only by the heat conductive sheet 10 without using the heat sink 2. Is.

[0034]

Next, embodiments of the present invention will be described. Example 1 A wire mesh woven into a 16 mesh with a copper wire having a wire diameter of 250 μm is prepared, and the wire mesh is fixed on a glass fiber-containing Teflon sheet. Next, the heat conductive liquid silicone rubber KE1
861 (manufactured by Shin-Etsu Chemical Co., Ltd.) is impregnated with a wire net by silk screen printing so as to have a uniform thickness.
The impregnated sheet was left in an oven at 150 ° C. for 1 hour for curing to produce a heat dissipation member corresponding to FIG. When the heat conductivity of the heat dissipation member thus obtained was measured with a heat conductivity meter, the heat conductivity was 4 × 10 ^-2, which was about one digit higher than that of the heat conductive silicone rubber alone.

Example 2 A wire mesh woven into a 200 mesh with a phosphor bronze wire having a diameter of 55 μm is prepared, and this wire mesh is fixed on a glass fiber-containing Teflon sheet. Next, the heat conductive liquid silicone rubber KE1861 (manufactured by Shin-Etsu Chemical Co., Ltd.) is impregnated into the wire mesh by silk screen printing so as to have a uniform thickness. The impregnated sheet is left in an oven at 150 ° C for 1 hour to cure. Further, the heat conductive liquid silicone rubber KE described above is provided on one side of the cured sheet.
1861 using a knife coater with a total sheet thickness of 2
The coating was performed so that the thickness became mm, and the mold was bent using a mold and cured in an oven at 150 ° C. to produce a heat conductive sheet corresponding to FIG. The thickness of the heat conductive sheet thus obtained is 4 mm. When a model heater test was performed on this heat transfer sheet, the temperature rise was 3
It was possible to suppress the temperature to about 5 ° C, and the performance equivalent to that of the heat dissipation silicone grease was obtained. In addition, the heat conductive sheet has a small load of 100 gf / mm ² when compressed by 0.5 mm, and it was proved that it can be applied to a device having a large area and poor parallelism.

[0036]

As described above, according to the cooling structure for a semiconductor device according to the first and third aspects of the present invention, the wire mesh and the metal heat transfer member of the heat transfer sheet are deformed together with the elastomer, so that the semiconductor device is improved. Since the heat generated by the semiconductor device is contacted with an appropriate pressure and the elastomer having a high thermal conductivity containing a filler and the metal mesh or the metal heat conductor having a high thermal conductivity are conducted and radiated, The heat of the semiconductor device can be effectively dissipated.

According to the sixth aspect of the semiconductor device cooling structure of the present invention, the heat generated by the semiconductor device is conducted to the heat radiator from the connection portion between the elastomer and the wire mesh, and the heat is dissipated from the heat radiation fin portion. Therefore, it also functions as a heat sink, and the number of components can be reduced by omitting the heat sink.

According to the semiconductor device cooling structure of the second aspect of the present invention, since the heat conductive sheet is bent and the inside of the bent portion is filled with the elastomer, it can be largely elastically deformed, and the heat conductive sheet can be made. Can be reliably brought into close contact with a semiconductor device or the like. Further, in the cooling structure for a semiconductor device according to a fourth aspect of the invention, since the heat conductive sheet is bent and is interposed between the semiconductor device and the heat sink, the bending of the bent portion improves the adhesion, and It is also possible to dissipate heat inside the folds, resulting in better heat dissipation.

Further, in the semiconductor device cooling structure according to the fifth aspect of the present invention, since the gel layer of the elastomer absorbs the surface roughness of the semiconductor device and the heat sink to prevent the formation of an air layer, high heat dissipation is achieved. Excellent cooling performance is achieved, and the gel layer of the elastomer can be preformed in advance, which facilitates the assembling work.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view showing a first form of a cooling structure for a semiconductor device according to a first aspect of the invention.

FIG. 2 is a schematic cross-sectional view showing a second form of a cooling structure for a semiconductor device according to the invention of claim 1;

FIG. 3 shows a third embodiment of the cooling structure for a semiconductor device according to the invention of claim 1, a is a schematic sectional view, and b is a perspective view.

FIG. 4 is an alphabetical order showing a process of manufacturing a heat conductive sheet of a fourth form of a semiconductor device cooling structure according to the first aspect of the present invention, in which a and b are plan views and c is a perspective view.

FIG. 5 is a schematic cross-sectional view of a heat transfer sheet used in the cooling structure of the semiconductor device according to a fifth aspect of the present invention, showing a fifth mode thereof.

FIG. 6 is a schematic cross-sectional view of a heat transfer sheet used in the cooling structure, showing a sixth form of the cooling structure for a semiconductor device according to the invention of claim 1;

FIG. 7 is a schematic cross-sectional view of a heat transfer sheet used in the cooling structure, showing a seventh mode of the cooling structure of the semiconductor device according to the invention of claim 1;

FIG. 8 shows an embodiment of a cooling structure for a semiconductor device according to the invention of claim 6, wherein a is a schematic perspective view and b is a partially enlarged schematic front sectional view.

FIG. 9 is a schematic cross-sectional view showing a form of a cooling structure for a semiconductor device according to a third aspect of the invention and showing a heat conductive sheet used in the cooling structure.

FIG. 10 is an exploded perspective view schematically showing a cooling structure of a conventional semiconductor device.

[Explanation of symbols]

 1 Semiconductor Device 2 Heat Sink 10 Heat Transfer Sheet 11 Wire Mesh 12 Silicone Rubber (Elastomer) 13 Square Pipe Body (Wire Mesh) 14 Circular Pipe Body (Wire Mesh) 15 Silicone Gel (Elastomer) Layer 19 Radiator 19a Connection 19b Radiating Fin 40 Split Unit 71 Sheet 73 Metal foil (metal heat transfer body)

Claims (6)

[Claims] 1. A heat conductive sheet comprising an elastomer in which a filler having a high thermal conductivity is dispersed at a high compounding ratio and a wire net made of a metal having a high thermal conductivity, and a part of the wire net being exposed on the front and back surfaces. Then, the cooling structure for a semiconductor device, wherein the metal mesh exposed on one surface of the heat conductive sheet is provided so as to contact the semiconductor device. 2. The cooling device for a semiconductor device according to claim 1, wherein the heat-conducting sheet is bent to fill the bent inner portion with the elastomer. 3. A sheet body made of an elastomer in which a filler having a high thermal conductivity is dispersed at a high compounding ratio, and a metal heat conductor having a high thermal conductivity which is integrally deformable with the sheet body is penetrated through the front and back sides. A cooling structure for a semiconductor device, comprising a heat conductive sheet, wherein the heat conductive sheet is provided so that a metal heat conductor exposed on one surface is in contact with the semiconductor device. 4. The heat conductive sheet is bent and is interposed between a semiconductor device and a heat sink so that both the heat sink and the semiconductor device are in contact with the wire mesh or the metal heat transfer body. Item 4. A semiconductor device cooling structure according to Item 3. 5. The cooling structure for a semiconductor device according to claim 1, wherein an elastomer gel layer is formed on at least one surface of the heat conductive sheet. 6. A wire net made of a metal having a high thermal conductivity is bent in a substantially wavy shape to alternately form flat connecting portions and heat radiating fins, and the connecting portion of the wire net is formed in the vicinity of the connecting portion. A heat radiating body is formed by coating with an elastomer in which a filler having a high thermal conductivity is dispersed so as to be exposed, and the heat radiating body is provided so that the connecting portion of the wire net exposed from the elastomer comes into contact with the semiconductor device. A characteristic semiconductor device cooling structure.