JPH06144990A - Crystal orientation thin film manufacturing equipment - Google Patents
Crystal orientation thin film manufacturing equipmentInfo
- Publication number
- JPH06144990A JPH06144990A JP4322318A JP32231892A JPH06144990A JP H06144990 A JPH06144990 A JP H06144990A JP 4322318 A JP4322318 A JP 4322318A JP 32231892 A JP32231892 A JP 32231892A JP H06144990 A JPH06144990 A JP H06144990A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electrode
- film
- thin film
- auxiliary electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000013078 crystal Substances 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 description 18
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000009977 dual effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000002887 superconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
(57)【要約】
【目的】 簡便に、かつ特異な方位配列が可能な結晶配
向薄膜の形成を可能とする。
【構成】 スパッタリング装置に、基板１を装着する回
転ステージ部２を有する基板ホルダー電極３と、この基
板ホルダー電極３の回転ステージ部２とターゲット５と
の間にあって中空陰極性プラズマ空間を形成する対向極
板または環状極板からなる補助電極４とが備えられ、回
転ステージ部２は、その傾角度が回転制御され、また、
補助電極４と基板ホルダー電極３とに印加されるバイア
ス電圧によって補助電極４の中空陰極性プラズマ空間で
高荷粒子群がビーム状に制御されて、基板１表面に結晶
配向成膜される結晶配向薄膜製造装置。
(57) [Summary] [Purpose] It is possible to easily form a crystallographically oriented thin film capable of a specific orientational arrangement. [Structure] A substrate holder electrode 3 having a rotary stage portion 2 for mounting a substrate 1 on a sputtering apparatus, and a facing surface that forms a hollow cathodic plasma space between the rotary stage portion 2 of the substrate holder electrode 3 and a target 5. An auxiliary electrode 4 formed of a polar plate or an annular polar plate is provided, and the tilt angle of the rotary stage unit 2 is controlled to rotate.
The bias voltage applied to the auxiliary electrode 4 and the substrate holder electrode 3 controls the high-load particle group into a beam shape in the hollow cathodic plasma space of the auxiliary electrode 4 to form a crystalline orientation on the surface of the substrate 1. Thin film manufacturing equipment.
Description
【産業上の利用分野】この発明は、結晶配向薄膜製造装
置とこれを用いる方法に関するものである。さらに詳し
くは、この発明は、各種の機能性薄膜、結晶成長時のバ
ッファー薄膜の製造等に有用な、軸配向性の薄膜を形成
することのできる新しい薄膜製造装置とこれを用いた成
膜方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a crystal orientation thin film manufacturing apparatus and a method of using the same. More specifically, the present invention relates to a novel thin film manufacturing apparatus capable of forming an axially oriented thin film, which is useful for manufacturing various functional thin films, buffer thin films during crystal growth, etc., and a film forming method using the same. It is about.
【従来の技術とその課題】近年の超精密技術、超微細技
術の進展とともに、機能性薄膜技術は長足の進歩をとげ
ている。このような進歩は、いわゆるエピタキシーに代
表されるように薄膜の結晶構造の制御技術の発展によっ
て支えられてもいる。つまり結晶配向の制御である。し
かしながら、これまでの技術発展によっても、依然とし
て解決されていない問題も残されており、この問題の一
つとして、多結晶体やアモルファス体の上に結晶配向を
制御しながら結晶成長させることが難しいという点があ
った。それと言うのも、金属やセラミックスの多結晶体
やガラスなどのアモルファス体を基板にして、その上に
薄膜を成長させる場合に、結晶配向を制御しながら成長
させることができれば、たとえば超電導体、磁性薄膜、
光学薄膜等の広範な分野で、より高度な物理・化学的特
性や機能を有する薄膜を提供することができるからであ
る。従来、これらの多結晶体やアモルファス体からなる
基板上に配向性膜を製造する場合には、ｃ軸配向多結晶
膜のように、１軸方向のみの配向が主なものとなってい
る。実際、単結晶的に３軸配向した薄膜を得るために
は、単結晶基板を用い、格子整合（エピタキシー）技術
によって、あるいは、基板表面にパターニング技術で微
細なステップ加工を施して単結晶膜を成長させるグラフ
ォエピタキシー技術によって成膜するしか方法がなかっ
た。このような状況において、デュアルイオンビームス
パッタ法を用いたイオンアシスト成膜法によってガラス
基板上にＮｂ薄膜を成膜し、ｃ軸のみならずａ−ｂ面内
の配向をも制御することの可能性を示唆する最初の報告
がなされた（L.S. YU, et al：Appl.Phys.Lett. ４７
（１９８５）ｐ．９３２）。また、同様のデュアルイオ
ンビーム法により多結晶金属基材上にＹＳＺ（イットリ
ア安定化ジルコニア）薄膜を３軸配向させ得たことが報
告されてもいる（Y.Iijima, et al,：Appl.Phys.Lett.
６０（１９９２）ｐ７６９）しかしながら、これらの報
告に見られる成膜法では、デュアルイオンビームのよう
な高価な成膜装置の使用が必須であって、より簡便に、
しかも安価な汎用装置によって結晶配向を高度に制御す
ることは依然として不可能であった。そこで、この発明
は、デュアルイオンビームのような高価な成膜装置を用
いることなく、より簡便に、汎用性の優れた装置、方法
として、多結晶体やアモルファス体基板の上に高度に結
晶配向制御された薄膜を形成することのできる新しい装
置と方法を提供することを目的としている。2. Description of the Related Art With the recent progress of ultraprecision technology and ultrafine technology, functional thin film technology has made great strides. Such progress is also supported by the development of technology for controlling the crystal structure of thin films, as represented by so-called epitaxy. That is, the control of crystal orientation. However, even with the technological development up to now, there are still unsolved problems. One of the problems is that it is difficult to grow crystals on a polycrystalline or amorphous body while controlling the crystal orientation. There was a point. This is because when a thin film is grown on a substrate made of a metal or ceramic polycrystal or glass, if crystal growth can be performed while controlling the crystal orientation, for example, superconductors, magnetic Thin film,
This is because it is possible to provide a thin film having more advanced physical / chemical characteristics and functions in a wide range of fields such as an optical thin film. Conventionally, in the case of producing an oriented film on a substrate made of such a polycrystal or an amorphous body, the uniaxial orientation is the main one, like a c-axis oriented polycrystal film. In fact, in order to obtain a thin film that is monoaxially triaxially oriented, a single crystal film is used by a lattice matching (epitaxy) technique or by subjecting the substrate surface to a fine stepping process by a patterning technique. The only way to form a film was to use a growing graphoepitaxy technique. In such a situation, it is possible to form an Nb thin film on a glass substrate by an ion assisted film forming method using a dual ion beam sputtering method and control not only the c-axis but also the orientation in the ab plane. The first report suggesting sex was made (LS YU, et al: Appl.Phys.Lett. 47.
(1985) p. 932). It has also been reported that a YSZ (yttria-stabilized zirconia) thin film can be triaxially oriented on a polycrystalline metal substrate by the same dual ion beam method (Y. Iijima, et al ,: Appl.Phys). .Lett.
60 (1992) p769) However, in the film forming method shown in these reports, use of an expensive film forming apparatus such as a dual ion beam is indispensable.
Moreover, it was still impossible to control the crystal orientation to a high degree with an inexpensive general-purpose device. Therefore, the present invention provides a highly versatile apparatus and method, which does not require an expensive film forming apparatus such as a dual ion beam, and has a high degree of crystal orientation on a polycrystalline or amorphous substrate. It is an object of the present invention to provide a new apparatus and method capable of forming a controlled thin film.
【課題を解決するための手段】この発明は、上記の課題
を解決するものとして、スパッタリング装置に、基板を
装着する回転ステージ部を有する基板ホルダー電極と、
この基板ホルダー電極の回転ステージ部とターゲットと
の間にあって中空陰極性プラズマ空間を形成する対向極
板または環状極板からなる補助電極とが備えられ、回転
ステージ部は、その傾角度が回転制御され、また、補助
電極と基板ホルダー電極とに印加されるバイアス電圧に
よって補助電極の中空陰極性プラズマ空間で荷電粒子群
がビーム状に制御されて、基板表面に結晶配向成膜され
ることを特徴とする結晶配向薄膜製造装置を提供する。
また、この装置を用いた方法をもこの発明は提供する。
すなわち、この発明の要点となるスパッタ装置に組み込
む電極構造は、Ａ：回転ステージ部を有する基板ホルダ
ー電極と、Ｂ：対向した電極板もしくは環状電極板から
なり、中空陰極性プラズマ空間を形成し得る補助電極か
ら構成される。これらの電極の構成材料には任意の導体
が使用でき、不純物の膜中への混入を極端に避けねばな
らない場合には、対象となる膜の構成元素で作製するの
がよい。前記の電極（Ａ）（Ｂ）の相対位置について
は、たとえば図１および図２に例示したように、まず、
基板（１）を装着する基板ホルダー電極（３）の回転ス
テージ部（２）は、基板（１）面が水平から、傾角度θ
で可変できる構造とする。補助電極（４）は回転ステー
ジ部（２）とターゲット（５）との間にあって、通常
は、基板（１）側に、基板（１）を囲み込める位置にお
く。この場合、基板（１）の水平位置から補助電極
（４）の上端までの距離ｄは、スパッタ雰囲気中の粒子
の平均自由行程位を上限とする。その理由は、中空陰極
性プラズマ空間からイオンをひき出してできるだけ直進
させ、膜成長面に対して傾角度θで入射させるためであ
る。この場合の距離ｄについては、目的とする成膜に応
じて、またスパッタ条件やバイアス電圧条件等によって
適宜に選択する。通常は、距離ｄとしては０〜１５ｍｍ
程度を目安とすることができる。膜はターゲットからの
膜物質の堆積とイオンによる膜物質のスパッタエッチン
グの差し引きにより成長していくことになるが、スパッ
タエッチング率は物質によってイオン入射角依存性をも
っている。上記の傾斜角θは効率よくスパッタエッチン
グされるイオン入射角にほぼ対応する角度とするのが望
ましく、その目安として４０〜６０°程度とする。ま
た、補助電極（４）が形成する中空陰極性プラズマ空間
のサイズについては、補助電極の横巾ａ、高さｈ、長さ
ｌを可変とし、成膜時のパラメータとして最適化できる
ようにする。同様に基板ホルダー電極（３）に印加する
電圧Ｖs 及び補助電極（４）に印加する電圧Ｖh は各々
アース電位に対し可変とし、かつ、各々のイオン電流を
計測できる電流計を装着する。たとえば、補助電極
（４）については、対向電極板、環状電極板のいずれに
おいても、 幅ａ：１０〜３０ｍｍ 高さｈ：１５〜３０ｍｍ 程度とすることができる。また、バイアス電圧について
は、 Ｖs ，Ｖh ：−３００〜＋１００Ｖ 程度とすることができる。もちろん、環状電極板につい
ては、楕円、円形、角形等の任意の形状としてよい。以
下、実施例を示し、さらに詳しくこの発明について説明
する。In order to solve the above problems, the present invention provides a sputtering apparatus having a substrate holder electrode having a rotary stage portion for mounting a substrate,
The substrate holder electrode is provided with an auxiliary electrode composed of a counter electrode plate or an annular electrode plate which forms a hollow cathodic plasma space between the rotary stage part and the target, and the rotary stage part has its tilt angle controlled to rotate. In addition, the charged particles are controlled in the form of a beam in the hollow cathodic plasma space of the auxiliary electrode by a bias voltage applied to the auxiliary electrode and the substrate holder electrode, and a crystalline orientation film is formed on the substrate surface. Provided is a crystal orientation thin film manufacturing apparatus.
The present invention also provides a method using this device.
That is, the electrode structure incorporated in the sputtering apparatus, which is the main point of the present invention, is composed of A: a substrate holder electrode having a rotary stage portion and B: an opposing electrode plate or an annular electrode plate, which can form a hollow cathodic plasma space. It is composed of auxiliary electrodes. Any conductor can be used as a constituent material of these electrodes, and when it is necessary to extremely avoid mixing of impurities into the film, it is preferable to use the constituent elements of the target film. Regarding the relative positions of the electrodes (A) and (B), as shown in FIGS. 1 and 2, for example, first,
The rotary stage portion (2) of the substrate holder electrode (3) on which the substrate (1) is mounted has an inclination angle θ from the horizontal plane of the substrate (1).
The structure is variable. The auxiliary electrode (4) is located between the rotary stage unit (2) and the target (5), and is usually placed on the substrate (1) side so as to surround the substrate (1). In this case, the distance d from the horizontal position of the substrate (1) to the upper end of the auxiliary electrode (4) is limited to the mean free path of particles in the sputtering atmosphere. The reason is that the ions are extracted from the hollow cathodic plasma space and made to travel straight as much as possible, and are made incident on the film growth surface at an inclination angle θ. The distance d in this case is appropriately selected according to the target film formation, the sputtering conditions, the bias voltage conditions, and the like. Normally, the distance d is 0 to 15 mm
The degree can be used as a guide. The film grows by depositing the film substance from the target and subtracting the sputter etching of the film substance by ions, but the sputter etching rate depends on the ion incident angle depending on the substance. The above-mentioned inclination angle θ is preferably set to an angle substantially corresponding to the incident angle of ions for efficient sputter etching, and is set to about 40 to 60 ° as a standard. Regarding the size of the hollow cathodic plasma space formed by the auxiliary electrode (4), the width a, height h, and length l of the auxiliary electrode can be varied so that they can be optimized as parameters during film formation. . Similarly, the voltage V s applied to the substrate holder electrode (3) and the voltage V h applied to the auxiliary electrode (4) are variable with respect to the ground potential, and an ammeter capable of measuring each ion current is attached. For example, with respect to the auxiliary electrode (4), the width a: 10 to 30 mm, the height h: 15 to 30 mm can be set for both the counter electrode plate and the annular electrode plate. Further, the bias voltage is, V s, V h: may be -300 + 100 V approximately. Of course, the ring-shaped electrode plate may have any shape such as an ellipse, a circle, and a square. Hereinafter, the present invention will be described in more detail with reference to examples.
【実施例】図１および図２に例示した環状電極板を補助
電極（４）とする電極構造をスパッタリング装置に組込
んだ。この場合、回転ステージ部（２）を有する基板ホ
ルダー電極（３）と、補助電極（４）をジルコニウム及
び一部銅で作製した。両電極（３）（４）の相対位置及
び寸法は以下のようにした。すなわち、基板面の傾角度
θを５０°とし、補助電極（４）の上端と基板（１）ま
での距離ｄを５ｍｍとして、基板（１）をこの中空補助
電極（４）で囲い込む位置に置いた。補助電極（４）の
構成する中空陰極性プラズマ空間のサイズは、幅ａ；２
０ｍｍ、高さｈ；２３ｍｍ、長さｌ；５０ｍｍとした。
以上の電極構造を、マグネトロンスパッタ装置に組み込
んだ。ターゲットには、イットリア安定化ジルコニア
（ＹＳＺ）を用いた。成膜中基板ホルダーに印加する電
圧Ｖs 及び補助電極に印加する電圧Ｖh を各々アース電
位に対して−２００Ｖに設定し、次の条件でＹＳＺ膜を
生成させた。 ・ターゲット（５）への高周波パワー密度：３Ｗ／ｃｍ
2 ・スパッタガス（Ａｒ−５％Ｏ2 ）圧力：４×１０-3Ｔ
ｏｒｒ ・基板−ターゲット間距離：６０ｍｍ その結果、約０．５Å／Ｓで成長したＹＳＺ膜は下地基
板ハステロイの格子整合と無関係に、かつ、 Bravaisの
法則では（１１１）面が優先成長面であるにもかかわら
ず、図３に示したように、このＹＳＺ（１１１）は確認
できずにＹＳＺ（２００）面のみが基板面に平行に成長
していることがＸ線回折によって確認された。また、
ａ、ｂ両軸が基板面内で整列配向していることが、図４
に示したΦスキャンＸ線回折で確認された。ＹＳＺは、
立方晶（ｆｃｃ）であるため、面内では４回対称性が現
われれば（９０°毎にピーク）、配向したことになる。
そして、膜は高い密着性を有する光沢膜であった。な
お、上記のＹＳＺをバッファー膜にもつハステロイ基板
上にＹＢａ2 Ｃｕ3Ｏｙ超電導膜を形成させたところ、
液体窒素温度、７７Ｋにおいて１０4 Ａ／ｃｍ2 台以上
の高臨界電流値を有していた。EXAMPLE An electrode structure using the annular electrode plate illustrated in FIGS. 1 and 2 as an auxiliary electrode (4) was incorporated in a sputtering apparatus. In this case, the substrate holder electrode (3) having the rotary stage part (2) and the auxiliary electrode (4) were made of zirconium and part of copper. The relative positions and dimensions of both electrodes (3) and (4) were as follows. That is, the inclination angle θ of the substrate surface is set to 50 °, the distance d between the upper end of the auxiliary electrode (4) and the substrate (1) is set to 5 mm, and the substrate (1) is surrounded by the hollow auxiliary electrode (4). placed. The size of the hollow cathodic plasma space formed by the auxiliary electrode (4) is width a; 2
The length was 0 mm, the height h was 23 mm, and the length 1 was 50 mm.
The above electrode structure was incorporated in a magnetron sputtering apparatus. Yttria-stabilized zirconia (YSZ) was used as the target. The voltage V s applied to the substrate holder and the voltage V h applied to the auxiliary electrode during film formation were each set to −200 V with respect to the ground potential, and a YSZ film was formed under the following conditions.・ High frequency power density to target (5): 3W / cm
2. Sputtering gas (Ar-5% O 2 ) pressure: 4 × 10 −3 T
orr ・ Substrate-target distance: 60 mm As a result, the YSZ film grown at about 0.5 Å / S has no relation to the lattice matching of the underlying substrate Hastelloy, and according to Bravais' law, the (111) plane is the preferential growth plane. Nevertheless, as shown in FIG. 3, it was confirmed by X-ray diffraction that this YSZ (111) could not be confirmed and only the YSZ (200) plane was growing parallel to the substrate surface. Also,
The fact that both a and b axes are aligned and aligned in the plane of the substrate is shown in FIG.
It was confirmed by the Φ scan X-ray diffraction shown in FIG. YSZ is
Since it is a cubic crystal (fcc), if 4-fold symmetry appears in the plane (peaks every 90 °), it means that the crystal is oriented.
The film was a glossy film having high adhesion. When a YBa 2 Cu 3 Oy superconducting film was formed on a Hastelloy substrate having the above YSZ as a buffer film,
It had a high critical current value of 10 4 A / cm 2 or more at liquid nitrogen temperature of 77K.
【発明の効果】以上詳しく説明した通り、この発明の電
極構造を有するスパッタ装置によって成膜を行なう場合
には、膜成長の優先方位配列則（ Bravaisの経験則）に
よらない特異な方位配列が可能となる。またｃ軸のみな
らずａ，ｂ軸も配向した単結晶性膜を得ることができ
る。なお、たとえば酸化物超電導体薄膜を磁気シールド
や電子デバイス等に応用する場合には、金属のような多
結晶基板上に作製することができ、かつ、高い臨界電流
密度を有する膜の成膜技術が要求されているが、一般に
は、多結晶基板上に成膜する場合、ｃ軸方向の一軸のみ
の配向は比較的容易に達成できるが、基板面内のａ，ｂ
両軸も配向させることは容易ではない。その結果、結晶
粒が無秩序に成長し粒界を形成するため、膜に通電する
ことのできる臨界電流は低く抑えられてしまう。この問
題を解決する一つの方法は、この発明により３軸が配向
した膜をあらかじめ金属基材上にバッファー膜として作
製しておき、その上に超電導膜をエピタキシャル的に成
長させることで結晶が面内にも配列した超電導膜を作製
することで解決される。そして、この発明では、通常の
スパッタ装置に簡単な電極構造を組み込むだけで、高価
なイオン銃、高真空排気系などの使用を必要としていな
い。As described above in detail, when a film is formed by the sputtering apparatus having the electrode structure of the present invention, a peculiar azimuth arrangement not depending on the preferential azimuth arrangement rule (Bravais empirical rule) of film growth is obtained. It will be possible. Further, it is possible to obtain a single crystal film in which not only the c-axis but also the a-axis and the b-axis are oriented. Note that, for example, when the oxide superconductor thin film is applied to a magnetic shield, an electronic device, or the like, a film forming technique that can be formed on a polycrystalline substrate such as a metal and has a high critical current density However, in general, when a film is formed on a polycrystalline substrate, it is relatively easy to achieve the uniaxial orientation in the c-axis direction.
It is not easy to orient both axes. As a result, the crystal grains grow randomly and form grain boundaries, so that the critical current that can be passed through the film is suppressed to a low level. One method of solving this problem is to prepare a triaxially oriented film as a buffer film on a metal substrate in advance according to the present invention, and epitaxially grow a superconducting film on the film to form a crystal plane. This can be solved by forming a superconducting film that is also arranged inside. Further, in the present invention, only a simple electrode structure is incorporated in a normal sputtering apparatus, and it is not necessary to use an expensive ion gun, a high vacuum exhaust system, or the like.
【図１】この発明の装置を例示した要部斜視図である。FIG. 1 is a perspective view of a main part illustrating a device of the present invention.
【図２】図１に対応する正面図である。FIG. 2 is a front view corresponding to FIG.
【図３】実施例としての成膜のＸ線回折図である。FIG. 3 is an X-ray diffraction diagram of film formation as an example.
【図４】実施例としての面内Ｘ線回折図である。FIG. 4 is an in-plane X-ray diffraction diagram as an example.
１ 基板 ２ 回転ステージ部 ３ 基板ホルダー電極 ４ 補助電極 ５ ターゲット（電極） 1 substrate 2 rotation stage part 3 substrate holder electrode 4 auxiliary electrode 5 target (electrode)
【手続補正書】[Procedure amendment]
【提出日】平成５年１１月１２日[Submission date] November 12, 1993
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】図面[Document name to be corrected] Drawing
【補正対象項目名】全図[Correction target item name] All drawings
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【図１】 [Figure 1]
【図２】 [Fig. 2]
【図３】 [Figure 3]
【図４】 [Figure 4]
───────────────────────────────────────────────────── フロントページの続き (72)発明者 浅野 稔久 茨城県つくば市千現１丁目２番１号 科学 技術庁金属材料技術研究所筑波支所内 (72)発明者 田中 吉秋 茨城県つくば市千現１丁目２番１号 科学 技術庁金属材料技術研究所筑波支所内 (72)発明者 前田 弘 茨城県つくば市千現１丁目２番１号 科学 技術庁金属材料技術研究所筑波支所内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Toshihisa Asano 1-2-1 Sengen, Tsukuba-shi, Ibaraki Prefectural Government, Science and Technology Agency, Research Institute for Metals, Tsukuba Branch (72) Inventor Yoshiaki Tanaka 1-1, Sengen, Tsukuba-shi, Ibaraki 2-1, No. 1 Tsukuba Branch, Research Institute for Metals, Science and Technology Agency (72) Inventor Hiroshi Maeda 1-21-1 Sengen, Tsukuba-shi, Ibaraki Within Tsukuba Branch, Science & Technology Agency, Japan
Claims (2)
回転ステージ部を有する基板ホルダー電極と、この基板
ホルダー電極の回転ステージ部とターゲットとの間にあ
って中空陰極性プラズマ空間を形成する対向極板または
環状極板からなる補助電極とが備えられ、回転ステージ
部は、その傾角度が回転制御され、また、補助電極と基
板ホルダー電極とに印加されるバイアス電圧によって補
助電極の中空陰極性プラズマ空間で荷電粒子群がビーム
状に制御されて、基板表面に結晶配向成膜されることを
特徴とする結晶配向薄膜製造装置。1. A sputtering apparatus, a substrate holder electrode having a rotary stage part for mounting a substrate, and a counter electrode plate or an annular plate which forms a hollow cathodic plasma space between the rotary stage part of the substrate holder electrode and the target. An auxiliary electrode composed of a polar plate is provided, the tilt angle of the rotary stage is controlled to rotate, and a bias voltage applied to the auxiliary electrode and the substrate holder electrode charges the hollow cathode plasma space of the auxiliary electrode. An apparatus for producing a crystallographically oriented thin film, characterized in that a group of particles is controlled in a beam shape to form a crystallographically oriented film on a substrate surface.
膜し、結晶のａ，ｂおよびｃの３軸を整列配向させるこ
とを特徴とする結晶配向薄膜製造方法。2. A method for producing a crystallographically oriented thin film, which comprises forming a film by sputtering using the apparatus according to claim 1, and aligning and orienting the three axes of a, b and c of the crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4322318A JPH0686354B2 (en) | 1992-11-09 | 1992-11-09 | Crystal orientation thin film manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4322318A JPH0686354B2 (en) | 1992-11-09 | 1992-11-09 | Crystal orientation thin film manufacturing equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06144990A true JPH06144990A (en) | 1994-05-24 |
| JPH0686354B2 JPH0686354B2 (en) | 1994-11-02 |
Family
ID=18142298
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4322318A Expired - Lifetime JPH0686354B2 (en) | 1992-11-09 | 1992-11-09 | Crystal orientation thin film manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0686354B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8043483B2 (en) | 2007-08-29 | 2011-10-25 | Canon Anelva Corporation | Film forming method by sputtering and sputtering apparatus thereof |
| US8999121B2 (en) | 2008-12-25 | 2015-04-07 | Canon Anelva Corporation | Sputtering apparatus |
| CN111041437A (en) * | 2019-12-04 | 2020-04-21 | 山东科技大学 | An auxiliary device for sputtering deposition of inclined c-axis piezoelectric thin films |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6352109B2 (en) | 2014-08-22 | 2018-07-04 | 三菱重工業株式会社 | Horizontal stepped scroll compressor |
-
1992
- 1992-11-09 JP JP4322318A patent/JPH0686354B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8043483B2 (en) | 2007-08-29 | 2011-10-25 | Canon Anelva Corporation | Film forming method by sputtering and sputtering apparatus thereof |
| US8999121B2 (en) | 2008-12-25 | 2015-04-07 | Canon Anelva Corporation | Sputtering apparatus |
| CN111041437A (en) * | 2019-12-04 | 2020-04-21 | 山东科技大学 | An auxiliary device for sputtering deposition of inclined c-axis piezoelectric thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0686354B2 (en) | 1994-11-02 |
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