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JPH05226676A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH05226676A
JPH05226676A JP4027966A JP2796692A JPH05226676A JP H05226676 A JPH05226676 A JP H05226676A JP 4027966 A JP4027966 A JP 4027966A JP 2796692 A JP2796692 A JP 2796692A JP H05226676 A JPH05226676 A JP H05226676A
Authority
JP
Japan
Prior art keywords
optical signal
signal wire
package
lead frame
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4027966A
Other languages
Japanese (ja)
Inventor
Akizo Minamide
彰三 南出
Takaaki Tsuda
孝明 津田
Takamichi Maeda
崇道 前田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4027966A priority Critical patent/JPH05226676A/en
Publication of JPH05226676A publication Critical patent/JPH05226676A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901Structure
    • H01L2224/4903Connectors having different sizes, e.g. different diameters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Light Receiving Elements (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

(57)【要約】 (修正有) 【目的】 発光及び受光素子の少なくとも一方を光信号
用ワイヤ等と共に樹脂などにより封止した半導体装置に
おいて、光信号用ケ−ブルとの接続を良好にする。 【構成】 半導体チップ10は、内部に電気的信号の処理
回路及び受光素子を含んで構成されており、光信号のボ
ンディングパッド10b を備えている。リ−ドフレ−ム25
には、光信号用ワイヤ11と対面する位置に、コの字型の
切り込みパタ−ン13からなる溝が設けられている。光信
号用ワイヤ11は、切り込みパターン13に沿ってサイドレ
ール部23に至り、所定の位置へのボンディングが行われ
る。また、切り込みパターン13には光信号用ワイヤ11の
ボンディング面と反対側のリードフレーム25の面に粘着
剤付きのポリイミド等のフィルム15をボンディング以前
に予め貼り付けるようにしている。
(57) [Summary] (Modified) [Purpose] To improve the connection with the optical signal cable in a semiconductor device in which at least one of the light emitting element and the light receiving element is sealed with resin or the like together with the optical signal wire. .. [Structure] The semiconductor chip 10 is configured to include an electric signal processing circuit and a light receiving element therein, and includes an optical signal bonding pad 10b. Lead frame 25
A groove formed by a U-shaped cut pattern 13 is provided at a position facing the optical signal wire 11. The optical signal wire 11 reaches the side rail portion 23 along the cut pattern 13 and is bonded to a predetermined position. Further, in the cut pattern 13, a film 15 made of polyimide or the like with an adhesive is attached in advance to the surface of the lead frame 25 opposite to the bonding surface of the optical signal wire 11 before bonding.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体装置に関し、特に
発光素子及び受光素子の少なくとも一方を有し電気的信
号及び光信号を処理可能である半導体基板を、その交信
に必要な光信号用ワイヤ等と共に樹脂などにより封止し
て構成した半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a semiconductor substrate having at least one of a light emitting element and a light receiving element and capable of processing an electrical signal and an optical signal. The present invention relates to a semiconductor device configured by sealing with a resin or the like.

【0002】[0002]

【従来の技術】一般にIC(集積回路)素子、発光素
子、受光素子などを有する半導体チップとして構成され
る半導体基板を、パッケ−ジングして製造した半導体装
置の一種として、樹脂封止型の半導体装置がある。かか
る半導体装置は、電気的信号を処理できるのみならず光
信号をも処理できるように、リ−ドフレ−ム上に取り付
けた半導体基板を、これに所定の光学的接続を施した光
信号用のワイヤ等と共に樹脂封止している。
2. Description of the Related Art Generally, a resin-sealed semiconductor is used as a kind of semiconductor device manufactured by packaging a semiconductor substrate which is generally formed as a semiconductor chip having an IC (integrated circuit) element, a light emitting element, a light receiving element and the like. There is a device. In such a semiconductor device, a semiconductor substrate mounted on a lead frame is provided with a predetermined optical connection for optical signals so that not only electric signals but also optical signals can be processed. It is resin-sealed together with wires.

【0003】この種の半導体装置の構造及び製造方法を
図7を参照して説明する。図7は、この種の半導体装置
の内部構造を、その一製造工程における状態で示したも
のである。
The structure and manufacturing method of this type of semiconductor device will be described with reference to FIG. FIG. 7 shows the internal structure of this type of semiconductor device in a state of one manufacturing process thereof.

【0004】図7において、半導体基板の一例である半
導体チップ50は、リ−ドフレ−ム55のダイパッド上に取
り付けられている。電気信号用のワイヤ61は、半導体チ
ップ50上に形成された電気信号用のボンディングパッド
50a とリードフレーム55のターミナル部62との間で、結
線されている。
In FIG. 7, a semiconductor chip 50, which is an example of a semiconductor substrate, is mounted on a die pad of a lead frame 55. The electrical signal wire 61 is a bonding pad for electrical signal formed on the semiconductor chip 50.
Connection is made between 50a and the terminal portion 62 of the lead frame 55.

【0005】一方、光信号用ワイヤ51は、半導体チップ
50が有する発光素子又は受光素子の光信号用のボンディ
ングパッド50b と、リードフレーム55のサイドレール部
63との間で、結線されている。尚、サイドレール部63
は、装置の組み立て完成時にはパッケージ本体の外部に
位置し、パッケージ本体から切り離されることとなる。
On the other hand, the optical signal wire 51 is a semiconductor chip.
Bonding pad 50b for light signal of light emitting element or light receiving element of 50 and side rail portion of lead frame 55
It is connected to 63. The side rail 63
Is located outside the package body when the device is completely assembled, and is separated from the package body.

【0006】ワイヤ51、52をこのようにワイヤボンディ
ングした後には、これらの半導体チップ50、ワイヤ51、
52等の部材は、エポキシ樹脂等でトランスファーモール
ド成型封止され、即ち図中破線で示すパッケ−ジ側面64
を持つパッケ−ジ本体が形成される。更に該パッケ−ジ
本体の外部において、リ−ドフレ−ム55により外部端子
が切断形成され、これにハンダ付けのための表面処理が
施される。
After wire-bonding the wires 51, 52 in this way, the semiconductor chip 50, the wires 51, 52
Members such as 52 are transfer-molded and sealed with epoxy resin or the like, that is, package side surfaces 64 shown by broken lines in the figure
Forming a package body having Further, external terminals are cut and formed by a lead frame 55 on the outside of the package body, and a surface treatment for soldering is applied to the external terminals.

【0007】このようにして作製したパッケージをリー
ドフレーム55のサイドレール部63から切り放す際には、
光信号用ワイヤ51は、パッケージ側面64の表面付近で切
断されることになる。
When the package thus manufactured is cut off from the side rail portion 63 of the lead frame 55,
The optical signal wire 51 is cut near the surface of the package side surface 64.

【0008】その後、金型パーティング面のリードフレ
ーム55の板厚に相当するパッケージ樹脂表面にある光信
号用ワイヤ51をパッケージ表面の樹脂と共に研磨加工
し、外部接続用の光通信ケーブルとの光学的接続が取れ
るように平滑化して、半導体装置の組み立て処理が完成
する。
After that, the optical signal wire 51 on the surface of the package resin corresponding to the thickness of the lead frame 55 on the parting surface of the die is polished together with the resin on the surface of the package, and the optical communication cable for external connection is formed. Then, the semiconductor device assembling process is completed.

【0009】[0009]

【発明が解決しようとする課題】一般に、この種の半導
体装置においては、光信号の交信についての安定性及び
信頼性をより高めることが重要である。従って、複数の
半導体装置間の光学的接続に用いる光信号用ケ−ブル
と、各半導体装置とを接続する際に、両者間で正確な位
置決めをすることが必要となり、このため、半導体装置
のパッケージ表面の所定の位置に光信号用ワイヤを導出
することが極めて重要となる。
Generally, in this type of semiconductor device, it is important to further enhance the stability and reliability of optical signal communication. Therefore, when connecting the optical signal cable used for optical connection between a plurality of semiconductor devices and each semiconductor device, it is necessary to perform accurate positioning between them. It is extremely important to lead out the optical signal wire to a predetermined position on the surface of the package.

【0010】しかしながら、上述した従来の技術によれ
ば、パッケージ内部での光信号用ワイヤ51の適当な位置
決め手段が無い。このため、光信号用ワイヤ51のパッケ
ージ表面における導出位置が所定の導出位置からずれて
しまったり、研磨面に対する光信号用ワイヤ51の角度が
ずれてしまったりする。この結果、半導体装置に光信号
用ケ−ブルを接続した際に、光信号用ケ−ブルと光信号
用ワイヤとの間で光軸ずれが発生するなどして、光信号
の正常な導通を確保できない場合が生じてしまうという
問題点があった。
However, according to the above-mentioned conventional technique, there is no suitable positioning means for the optical signal wire 51 inside the package. Therefore, the lead-out position of the optical signal wire 51 on the package surface may deviate from a predetermined lead-out position, or the angle of the optical signal wire 51 with respect to the polishing surface may deviate. As a result, when the optical signal cable is connected to the semiconductor device, an optical axis shift occurs between the optical signal cable and the optical signal wire, so that the optical signal is normally conducted. There was a problem that there were cases where it could not be secured.

【0011】また、前述の表面研磨される被研磨域はト
ランスファーモールド樹脂で覆われており、樹脂中に含
まれるシリカ粉が光信号用ワイヤを導出位置の周囲にも
存在していた。このため、製造段階において、前記パッ
ケージ表面の所定の光信号用ワイヤ導出位置の表面研磨
時に、樹脂中の充填剤であるシリカ粉が被研磨面に当た
り、平滑な研磨加工の妨げとなり、その結果、製造され
た半導体装置をして、光信号用ケ−ブルと光学的に良好
な接続を行うことができないという問題点もあった。
Further, the above-mentioned polished area to be surface-polished is covered with the transfer mold resin, and the silica powder contained in the resin also exists around the lead-out position of the optical signal wire. Therefore, in the manufacturing stage, at the time of surface polishing of the predetermined optical signal wire lead-out position on the package surface, the silica powder as the filler in the resin hits the surface to be polished, which hinders smooth polishing, resulting in There is also a problem in that the manufactured semiconductor device cannot be optically connected favorably to the optical signal cable.

【0012】本発明は上述した従来の問題点に鑑みなさ
れたものであり、光信号用ケ−ブルとの接続を良好に成
し得る半導体装置を提供することを課題とする。
The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a semiconductor device which can be satisfactorily connected to an optical signal cable.

【0013】[0013]

【課題を解決するための手段】本願第1発明の半導体装
置は上述の課題を達成するために、受光素子及び発光素
子の少なくとも一方を有する半導体基板と、該半導体基
板を封止するパッケ−ジ本体と、該パッケ−ジ本体の内
部において半導体基板が取り付けられたリ−ドフレ−ム
と、パッケ−ジ本体の内部において一端が半導体基板に
接続されており他端がパッケ−ジ本体の外部に導出され
た光信号用ワイヤとを備えており、光信号用ワイヤをパ
ッケ−ジ本体に対して位置決めすべくリ−ドフレ−ムに
光信号用ワイヤを固定する固定手段を設けたことを特徴
とする。
In order to achieve the above-mentioned object, a semiconductor device of the first invention of the present application has a semiconductor substrate having at least one of a light receiving element and a light emitting element, and a package for sealing the semiconductor substrate. A main body, a lead frame to which a semiconductor substrate is attached inside the package main body, one end inside the package main body is connected to the semiconductor substrate, and the other end is outside the package main body. A lead-out optical signal wire, and a fixing means for fixing the optical signal wire to the lead frame to position the optical signal wire with respect to the package body. To do.

【0014】また、本願第2発明の半導体装置は上述の
課題を達成するために、受光素子及び発光素子の少なく
とも一方を有する半導体基板と、モ−ルド樹脂から構成
されており半導体基板を封止するパッケ−ジ本体と、該
パッケ−ジ本体の内部において半導体基板が取り付けら
れたリ−ドフレ−ムと、パッケ−ジ本体の内部において
一端が半導体基板に接続されており他端がパッケ−ジ本
体の外部に導出された光信号用ワイヤとを備えており、
光信号用ワイヤの導出位置の周囲が硬質の充填剤を含ま
ない樹脂で覆われていることを特徴とする。
In order to achieve the above-mentioned object, the semiconductor device of the second invention of the present application is composed of a semiconductor substrate having at least one of a light receiving element and a light emitting element and a mold resin, and seals the semiconductor substrate. A package body, a lead frame to which a semiconductor substrate is attached inside the package body, one end of the package body connected to the semiconductor substrate, and the other end of the package body. It has an optical signal wire led out of the main body,
It is characterized in that the periphery of the lead-out position of the optical signal wire is covered with a resin containing no hard filler.

【0015】[0015]

【作用】一般に、光信号用ワイヤがパッケージ表面の所
定の導出位置からの位置ずれ及びパッケージ研磨面との
角度ずれを起こす要因は主に、光信号用ワイヤをボンデ
ィングした際に、光信号用ワイヤのボンディングループ
形状が再現性に欠けることにより、後工程での振動や樹
脂封止時に樹脂に押されてボンディングループ形状が変
形してしまうことである。
In general, the cause of the positional deviation of the optical signal wire from the predetermined lead-out position on the package surface and the angular deviation from the polishing surface of the package is mainly the optical signal wire when the optical signal wire is bonded. The lack of reproducibility of the bonding loop shape causes the deformation of the bonding loop shape due to the vibration in a later step or the resin being pushed by the resin at the time of resin sealing.

【0016】ここで、本願第1発明によれば、パッケ−
ジ本体の内部において一端が半導体基板に接続されてお
り他端がパッケ−ジ本体の外部に導出された光信号用ワ
イヤを、固定手段によりパッケ−ジ本体に対して位置決
めすべくリ−ドフレ−ムに固定するようにしたので、パ
ッケージ本体表面の所定の位置に光信号用ワイヤを導出
することが可能となる。この結果、パッケージから導出
された光信号用ワイヤと光信号用ケーブルとの接続に必
要な位置ぎめを正確に行うことができ、光信号用ケーブ
ルとの光学的な接続を良好に行うことができる。
According to the first invention of the present application, the package is
Inside the main body of the package, one end is connected to the semiconductor substrate and the other end is led out to the outside of the package main body. Since the optical signal wire is fixed to the frame, the optical signal wire can be led out to a predetermined position on the surface of the package body. As a result, the positioning required for the connection between the optical signal wire and the optical signal cable led out from the package can be accurately performed, and the optical connection with the optical signal cable can be favorably performed. ..

【0017】尚、第1発明において、リ−ドフレ−ムに
形成されており光信号用ワイヤが嵌め込まれた溝と、光
信号用ワイヤが嵌め込まれたと反対の側から溝を覆うべ
くリ−ドフレ−ムの溝部分に貼り付けられており光信号
用ワイヤが溝の中において接着された粘着剤付きフィル
ムとから、固定手段を構成すれば、当該半導体装置を樹
脂封止する際に光信号用ワイヤを所定位置に仮止めする
ことができるので、簡単にして極めて正確な位置決めを
することができる。
In the first aspect of the invention, the groove formed in the lead frame into which the optical signal wire is fitted and the lead frame to cover the groove from the side opposite to the side where the optical signal wire is fitted are covered. -If the fixing means is composed of a film with an adhesive, which is attached to the groove portion of the optical signal and the optical signal wire is adhered in the groove, the optical signal is used when the semiconductor device is resin-sealed. Since the wire can be temporarily fixed at a predetermined position, it is possible to easily and extremely accurately position the wire.

【0018】また、本願第2発明によれば、パッケ−ジ
本体は、硬質の充填剤等を含むモ−ルド樹脂から構成さ
れているので、半導体基板を物理的に良好に封止するこ
とができ、他方で、パッケ−ジ本体の内部において一端
が半導体基板に接続されており他端がパッケ−ジ本体の
外部に導出された光信号用ワイヤの導出位置の周囲が、
硬質の充填剤を含まない樹脂で覆われているので、その
製造段階において、パッケージ本体の表面における光信
号用ワイヤの導出位置付近の研磨時に、モ−ルド樹脂中
のシリカ粉等で被研磨面を傷つける事のない平滑な研磨
加工が可能となる。この結果、光信号用ケーブルとの光
学的な接続を良好に行うことができる。
According to the second invention of the present application, since the package body is made of the mold resin containing the hard filler and the like, the semiconductor substrate can be physically well-sealed. On the other hand, on the other hand, one end of the package body is connected to the semiconductor substrate and the other end is around the lead-out position of the optical signal wire led out of the package body,
Since it is covered with a resin that does not contain a hard filler, at the manufacturing stage, when polishing near the lead-out position of the optical signal wire on the surface of the package body, the surface to be polished with silica powder etc. in the mold resin Allows smooth polishing without damaging the surface. As a result, good optical connection with the optical signal cable can be achieved.

【0019】次に示す本発明の実施例から、本発明のこ
のような作用がより明らかにされ、更に本発明の他の作
用が明らかにされよう。
From the following examples of the present invention, such an effect of the present invention will be made clearer, and further other effects of the present invention will be made clear.

【0020】[0020]

【実施例】以下図面を用いて本発明の実施例を詳細に説
明する。
Embodiments of the present invention will be described in detail below with reference to the drawings.

【0021】先ず、本実施例の半導体装置の構造及び製
造方法を図1を参照して説明する。図1は、本実施例の
半導体装置の内部構造を、その一製造工程における状態
で示したものである。
First, the structure and manufacturing method of the semiconductor device of this embodiment will be described with reference to FIG. FIG. 1 shows the internal structure of the semiconductor device of this embodiment in a state in one manufacturing process thereof.

【0022】図1において、半導体基板の一例たる半導
体チップ10は、内部に電気的信号の処理回路及び発光素
子又は受光素子を含んで構成されており、その表面に
は、電気的信号を交信するためのボンディングパッド10
a と光信号を交信するためのボンディングパッド10b と
を備えている。半導体チップ10は、例えば銀エポキシ系
の接着剤により、リ−ドフレ−ム25のダイパッド上に取
り付けられている。
In FIG. 1, a semiconductor chip 10, which is an example of a semiconductor substrate, is configured to include an electric signal processing circuit and a light emitting element or a light receiving element inside, and an electric signal is communicated on the surface thereof. Bonding pad for 10
a and a bonding pad 10b for communicating an optical signal. The semiconductor chip 10 is mounted on the die pad of the lead frame 25 with, for example, a silver epoxy adhesive.

【0023】リ−ドフレ−ム25は、銅系又は42アロイな
どの材料から構成されており、リ−ドフレ−ム25には、
金ワイヤ21がボンディングされる部分に銀メッキが予め
施されている。
The lead frame 25 is made of a material such as a copper-based material or 42 alloy.
The portion to which the gold wire 21 is bonded is previously plated with silver.

【0024】半導体チップ10の電極パッド10a とリード
フレーム25の端子部22とは、金ワイヤ21により、例えば
超音波を併用したネールヘッドボンディング技術を用い
て結線されている。
The electrode pad 10a of the semiconductor chip 10 and the terminal portion 22 of the lead frame 25 are connected by a gold wire 21 using, for example, a nail head bonding technique which also uses ultrasonic waves.

【0025】光信号用ワイヤ11は、光伝送用可撓性のプ
ラスチックなどから構成されている。半導体チップ10が
有する発光素子又は受光素子のボンディングパッド10b
と、リードフレーム25のサイドレール部23とは、光信号
用ワイヤ11により、例えばネールヘッドボンディング技
術を用いて、結線されている。このようにして、該発光
素子又は受光素子と光学的につながった光信号用ワイヤ
11が、パッケージ外部へと導出される。
The optical signal wire 11 is made of flexible plastic for optical transmission. Bonding pad 10b for light emitting element or light receiving element of semiconductor chip 10
And the side rail portion 23 of the lead frame 25 are connected by the optical signal wire 11 using, for example, a nail head bonding technique. In this way, an optical signal wire optically connected to the light emitting element or the light receiving element
11 is led out of the package.

【0026】サイドレール部23は、装置の組み立て完成
後にはパッケージ本体の外部に位置し、パッケージ本体
から切り離されることとなる。
The side rail portion 23 is located outside the package body and separated from the package body after the assembly of the device is completed.

【0027】尚、ワイヤ11とのボンディング性を確保す
るために、ボンディング以前に予め半導体チップ10側及
びリードフレーム25側両方の被ボンディング部面に、ワ
イヤ11、ボンディングパッド10b 、並びにリードフレー
ム25と密着性のよい膜によるコーティング処理を行うよ
うにしても良い。この場合には、少なくとも半導体チッ
プ10側は、発光素子又は受光素子を機能ならしめるため
に透光性をもったコーティング膜を用いなければならな
い。また、かかる透光性をもったコ−ティング膜とし
て、アクリル樹脂等の透光性の有機膜等を用いても良い
が、この場合には、特にボンディングの際の加熱温度は
100℃以下で行うことが望ましい。
In order to secure the bondability with the wire 11, the wire 11, the bonding pad 10b, and the lead frame 25 are formed on the surfaces of the semiconductor chip 10 side and the lead frame 25 side to be bonded in advance before bonding. You may make it perform the coating process by the film with good adhesiveness. In this case, at least the semiconductor chip 10 side must use a light-transmitting coating film in order to make the light emitting element or the light receiving element function. Further, as the translucent coating film, a translucent organic film such as an acrylic resin may be used, but in this case, the heating temperature during bonding is
It is desirable to carry out at 100 ° C or lower.

【0028】また、半導体チップ10に光信号用ワイヤ11
をボンディングするに際しては、加熱によるワイヤ11の
酸化変質を防止するために、ワイヤ11の先端域のボール
形成部分に不活性ガスを吹きかけた状態でレーザー光線
のエネルギーを照射し、ワイヤ11を加熱熔融することに
よってワイヤボールを形成するのが好ましい。
Further, the optical signal wire 11 is attached to the semiconductor chip 10.
At the time of bonding, in order to prevent oxidative deterioration of the wire 11 due to heating, the energy of the laser beam is applied to the ball forming portion in the tip region of the wire 11 in a state of being sprayed with an inert gas to heat and melt the wire 11. It is preferable to form a wire ball by doing so.

【0029】ここで、本実施例では特に、リ−ドフレ−
ム25には、光信号用ワイヤ11と対面する位置に、固定手
段の一例を構成する、コの字型の切り込みパタ−ン13か
らなる溝が設けられている。
In the present embodiment, particularly, the lead frame is
At the position facing the optical signal wire 11, the groove 25 is provided with a groove formed by a U-shaped cut pattern 13 which constitutes an example of a fixing means.

【0030】図1及び図2に示すように、光信号用ワイ
ヤ11とボンディングパッド10b との間でのボンディング
が終了後、光信号用ワイヤ11は、ワイヤ位置決めのため
に形成されたコの字形の切り込みパターン13に沿ってサ
イドレール部23に至り、所定の位置へのボンディングが
行われる。
As shown in FIGS. 1 and 2, after the bonding between the optical signal wire 11 and the bonding pad 10b is completed, the optical signal wire 11 is formed into a U-shape for wire positioning. The side rail portion 23 is reached along the cut pattern 13 and the bonding is performed at a predetermined position.

【0031】従って、本実施例では、光信号用ワイヤ11
を両側からリードフレーム25で挟み光信号用ワイヤ11を
ボンディングした後工程で、光信号用ワイヤ11が移動
し、パッケージ本体表面の所定の位置から位置ずれ及び
研磨面に対する角度ずれをしないように構成されてい
る。
Therefore, in this embodiment, the optical signal wire 11 is used.
It is configured so that the optical signal wire 11 does not move from a predetermined position on the surface of the package body and does not deviate from the predetermined position on the surface of the package body and the angle with respect to the polishing surface after the optical signal wire 11 is bonded by sandwiching the optical signal wire 11 from both sides with the lead frame 25. Has been done.

【0032】尚、本実施例では特に、ワイヤ位置決めの
ため、コの字形の切り込みパターン14が、組み立て完成
後にはパッケージから切り離されるサイドレール部23に
も形成されている。このため、かかるワイヤ位置決めを
より正確に行える。
In this embodiment, in particular, for the purpose of wire positioning, the U-shaped cut pattern 14 is also formed in the side rail portion 23 which is separated from the package after the assembly is completed. Therefore, such wire positioning can be performed more accurately.

【0033】また、本実施例では更に、パッケージ内の
コの字形の切り込みパターン13には光信号用ワイヤ11の
ボンディング面と反対側のリードフレーム25の面に粘着
剤付きのポリイミド等のフィルム15をボンディング以前
に予め貼り付けるようにしている。これによって、製造
段階において、リードフレーム25のコの字形の切り込み
パターン13の溝と粘着剤付きのフィルム15で光信号用ワ
イヤ11の仮どめを行うことができる。
Further, in this embodiment, the U-shaped cut pattern 13 in the package further has a film 15 made of polyimide or the like with an adhesive on the surface of the lead frame 25 opposite to the bonding surface of the optical signal wire 11. Is attached in advance before bonding. Accordingly, in the manufacturing stage, the optical signal wire 11 can be temporarily fitted by the groove of the U-shaped cut pattern 13 of the lead frame 25 and the film 15 with the adhesive.

【0034】このように、該溝部で光信号用ワイヤ11の
一部が粘着フィルム15と接触するようにワイヤボンド条
件を設定することにより、ワイヤループ形状の一層の安
定化を図ることができる。
By thus setting the wire bond conditions so that a part of the optical signal wire 11 contacts the adhesive film 15 in the groove portion, the wire loop shape can be further stabilized.

【0035】また、使用される光信号用ワイヤ11には光
信号用ワイヤ11内を伝わる光がワイヤ側面から漏れ出し
てしまい、光が減衰することのないよう、ワイヤ側面部
は光を反射する被膜で一様にコーティングされている。
Also, in order to prevent the light propagating in the optical signal wire 11 from leaking from the wire side surface to the used optical signal wire 11, the wire side surface portion reflects the light. It is uniformly coated with a film.

【0036】このようにして、ボンディング終了後、図
2及び図3に示すように、該溝の光信号用ワイヤ11の導
出部分12の周囲を、シリカ粉等の研磨に支障となる硬質
の充填剤を含まない樹脂、例えば直径1ミクロンを越え
る硬質粉を含まないエポキシ樹脂16をポッティング及び
熱硬化する。即ち、その後の封止工程でトランスファー
モールド樹脂17が被研磨域に至らないようにすべく、光
信号用ワイヤ11の周囲を該樹脂16で覆ってしまう。
In this way, after the bonding is completed, as shown in FIGS. 2 and 3, the periphery of the lead-out portion 12 of the optical signal wire 11 of the groove is filled with a hard filler which hinders the polishing of silica powder or the like. An agent-free resin, such as a hard powder free epoxy resin 16 having a diameter of more than 1 micron, is potted and heat cured. That is, in the subsequent sealing step, the transfer mold resin 17 is covered with the resin 16 in order to prevent the transfer mold resin 17 from reaching the area to be polished.

【0037】その後、エポキシ系のトランスファーモー
ルド樹脂で成型して封止を完成し、更に外部端子の切断
成型を行うと共にそのハンダ付けのための表面処理を行
いパッケージングされる。この際、パッケージをリード
フレーム25のサイドレール部23から切り放す際には、光
信号用ワイヤ11は、パッケージ側面24の表面付近で切断
される。
After that, the resin is molded with an epoxy transfer mold resin to complete the sealing, the external terminals are cut and molded, and the surface treatment for soldering is performed and the packaging is performed. At this time, when the package is cut off from the side rail portion 23 of the lead frame 25, the optical signal wire 11 is cut near the surface of the package side surface 24.

【0038】その後、図4に示すように、金型パーティ
ング面26のリードフレーム25の板厚に相当するパッケ−
ジ樹脂表面にある光信号用ワイヤ11を、パッケ−ジ表面
の樹脂と共に、所定量(例えば数10ミクロン)機械研磨
し、凹凸が深さ0.5 ミクロン程度の平滑面たる被研磨面
18を形成する。ここで、かかる研磨される樹脂部分は、
樹脂16から構成されているので、研磨表面が傷付けられ
ることがない。この結果、外部接続用の光通信ケーブル
との良好な光学的接続が取れるようになる。
Thereafter, as shown in FIG. 4, a package corresponding to the plate thickness of the lead frame 25 on the mold parting surface 26.
The optical signal wire 11 on the resin surface is mechanically polished together with the resin on the package surface by a specified amount (for example, several tens of microns), and the surface to be polished is a smooth surface with a depth of about 0.5 microns.
Forming 18. Here, the resin portion to be polished is
Since it is made of resin 16, the polishing surface is not damaged. As a result, good optical connection with the optical communication cable for external connection can be achieved.

【0039】以上のようにして、図5に示すような半導
体パッケ−ジとして構成された半導体装置31が完成す
る。
As described above, the semiconductor device 31 configured as a semiconductor package as shown in FIG. 5 is completed.

【0040】図5から分かるように、半導体装置31は、
電気的信号を交信するためのアウタリ−ド33がその外周
部に沿って備えられており、また、光信号用ワイヤ11の
導出部分12がパッケ−ジ本体から研磨面において露出し
ている。
As can be seen from FIG. 5, the semiconductor device 31 is
An outer lead 33 for communicating an electrical signal is provided along the outer periphery of the outer lead 33, and a lead-out portion 12 of the optical signal wire 11 is exposed from the package body on the polishing surface.

【0041】このように構成された半導体装置31は、プ
リント基板等に搭載された後に、図6に示すように、コ
ネクタ40が設けられており光ファイバー等から構成され
た光ケ−ブル41に接続されて、かかる光ケ−ブル41を介
して他の半導体装置と結線される。
After the semiconductor device 31 thus constructed is mounted on a printed circuit board or the like, it is connected to an optical cable 41 which is provided with a connector 40 and is composed of an optical fiber as shown in FIG. Then, it is connected to another semiconductor device through the optical cable 41.

【0042】この際、本実施例によれば、光信号用ワイ
ヤ11の導出部分12が正確に位置決めされており、且つパ
ッケ−ジ表面の被研磨面18には殆ど傷が着いていないた
め、光ケ−ブル41との光学的な接続を極めて良好に行う
ことができる。
At this time, according to this embodiment, the lead-out portion 12 of the optical signal wire 11 is accurately positioned, and the polished surface 18 of the package surface is scarcely scratched. The optical connection with the optical cable 41 can be performed very well.

【0043】[0043]

【発明の効果】以上詳細に説明したように本願第1発明
によれば、パッケ−ジ本体の外部に導出された光信号用
ワイヤを、固定手段によりパッケ−ジ本体に対して位置
決めすべくリ−ドフレ−ムに固定するようにしたので、
パッケージ本体表面の所定の位置に光信号用ワイヤを導
出することが可能となる。この結果、パッケージから導
出された光信号用ワイヤと光信号用ケーブルとの接続に
必要な位置ぎめを正確に行うことができ、光信号用ケー
ブルとの光学的な接続を良好に行うことができる。
As described in detail above, according to the first invention of the present application, the optical signal wire led out to the outside of the package body is repositioned by the fixing means with respect to the package body. -Because I fixed it on the dframe,
The optical signal wire can be led out to a predetermined position on the surface of the package body. As a result, the positioning required for the connection between the optical signal wire and the optical signal cable led out from the package can be accurately performed, and the optical connection with the optical signal cable can be favorably performed. ..

【0044】また、本願第2発明によれば、パッケ−ジ
本体の外部に導出された光信号用ワイヤの導出位置の周
囲が、硬質の充填剤を含まない樹脂で覆われているの
で、パッケージ本体の表面における光信号用ワイヤの導
出位置付近の研磨時に、モ−ルド樹脂中のシリカ粉等で
被研磨面を傷つける事のない平滑な研磨加工が可能とな
り、光信号用ケーブルとの光学的な接続を良好に行うこ
とができる。
Further, according to the second aspect of the present invention, since the periphery of the lead-out position of the optical signal wire led out of the package body is covered with the resin containing no hard filler, the package When polishing near the lead-out position of the optical signal wire on the surface of the main body, it is possible to perform a smooth polishing process without damaging the surface to be polished with silica powder etc. in the mold resin. Good connection.

【0045】以上の結果、本発明により、電気的信号及
び光信号の両方を処理し得ると共に、その両方につき極
めて安定性及び信頼性の高い交信を可能とし得、量産性
に優れ、且つ安価な半導体装置を実現できる。
As a result, according to the present invention, both electric signals and optical signals can be processed, and extremely stable and reliable communication can be performed for both of them, which is excellent in mass productivity and is inexpensive. A semiconductor device can be realized.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の半導体装置の内部構造を、
その一製造工程における状態で示した平面図である。
FIG. 1 shows an internal structure of a semiconductor device according to an embodiment of the present invention,
It is the top view shown in the state in the one manufacturing process.

【図2】図1の実施例の光信号用ワイヤの導出部付近を
示す部分断面図である。
FIG. 2 is a partial cross-sectional view showing the vicinity of a lead portion of the optical signal wire of the embodiment of FIG.

【図3】図1の実施例の内部構造を、他の製造工程にお
ける状態で示した平面図である。
FIG. 3 is a plan view showing the internal structure of the embodiment of FIG. 1 in a state in another manufacturing process.

【図4】図1の実施例の光信号用ワイヤの導出部付近を
示す側面図である。
FIG. 4 is a side view showing the vicinity of the lead-out portion of the optical signal wire of the embodiment of FIG.

【図5】図1の実施例の完成状態を示す斜視図である。5 is a perspective view showing a completed state of the embodiment of FIG. 1. FIG.

【図6】図6の実施例の光ケ−ブルを接続した状態を示
す斜視図である。
6 is a perspective view showing a state in which the optical cables of the embodiment of FIG. 6 are connected.

【図7】従来例の半導体装置の内部構造を、その一製造
工程における状態で示した平面図である。
FIG. 7 is a plan view showing an internal structure of a conventional semiconductor device in a state in a manufacturing process thereof.

【符号の説明】[Explanation of symbols]

10 半導体チップ 11 光信号用ワイヤ 12 光信号用ワイヤ導出部分 13 パッケージ内のコの字形の切り込みパターン 14 サイドレール部のコの字形の切り込みパターン 15 粘着フィルム 16 硬質の充填材を含まないポティング樹脂 17 トランスファーモールド樹脂 18 パッケージ表面の被研磨域 21 金ワイヤ 22 リ−ドフレ−ムのターミナル部 23 リードフレームのサイドレール部 24 モールド樹脂で成型されたパッケージ側面 25 リードフレーム 26 金型パーティング面 31 半導体装置 40 光ケーブルコネクター 41 光ケーブル 10 Semiconductor chip 11 Optical signal wire 12 Optical signal wire lead-out portion 13 U-shaped notch pattern in the package 14 U-shaped notch pattern in the side rail 15 Adhesive film 16 Potting resin that does not contain hard filler 17 Transfer mold resin 18 Area to be polished on package surface 21 Gold wire 22 Terminal part of lead frame 23 Side rail part of lead frame 24 Side surface of package molded with mold resin 25 Lead frame 26 Mold parting surface 31 Semiconductor device 40 Optical cable connector 41 Optical cable

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01L 33/00 M 8934−4M N 8934−4M ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication H01L 33/00 M 8934-4M N 8934-4M

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 受光素子及び発光素子の少なくとも一方
を有する半導体基板と、該半導体基板を封止するパッケ
−ジ本体と、該パッケ−ジ本体の内部において前記半導
体基板が取り付けられたリ−ドフレ−ムと、前記パッケ
−ジ本体の内部において一端が前記半導体基板に接続さ
れており他端が前記パッケ−ジ本体の外部に導出された
光信号用ワイヤとを備えており、前記光信号用ワイヤを
前記パッケ−ジ本体に対して位置決めすべく前記リ−ド
フレ−ムに前記光信号用ワイヤを固定する固定手段を設
けたことを特徴とする半導体装置。
1. A semiconductor substrate having at least one of a light receiving element and a light emitting element, a package main body for sealing the semiconductor substrate, and a lead frame having the semiconductor substrate attached inside the package main body. And an optical signal wire, one end of which is connected to the semiconductor substrate inside the package body and the other end of which is led out of the package body, for the optical signal. A semiconductor device comprising fixing means for fixing the optical signal wire to the lead frame so as to position the wire with respect to the package body.
【請求項2】 前記固定手段は、前記リ−ドフレ−ムに
形成されており前記光信号用ワイヤが嵌め込まれた溝
と、前記光信号用ワイヤが嵌め込まれたと反対の側から
前記溝を覆うべく前記リ−ドフレ−ムの溝部分に貼り付
けられており前記光信号用ワイヤが前記溝の中において
接着された粘着剤付きフィルムとを含むことを特徴とす
る請求項1記載の半導体装置。
2. The fixing means covers the groove formed in the lead frame and into which the optical signal wire is fitted, and the groove from the side opposite to the side where the optical signal wire is fitted. 2. A semiconductor device according to claim 1, further comprising: a film with an adhesive, which is adhered to the groove portion of the lead frame and the optical signal wire is adhered in the groove.
【請求項3】 受光素子及び発光素子の少なくとも一方
を有する半導体基板と、モ−ルド樹脂から構成されてお
り前記半導体基板を封止するパッケ−ジ本体と、該パッ
ケ−ジ本体の内部において前記半導体基板が取り付けら
れたリ−ドフレ−ムと、前記パッケ−ジ本体の内部にお
いて一端が前記半導体基板に接続されており他端が前記
パッケ−ジ本体の外部に導出された光信号用ワイヤとを
備えており、前記光信号用ワイヤの導出位置の周囲が硬
質の充填剤を含まない樹脂で覆われていることを特徴と
する半導体装置。
3. A semiconductor substrate having at least one of a light receiving element and a light emitting element, a package body made of a mold resin for sealing the semiconductor substrate, and the package body inside the package body. A lead frame to which a semiconductor substrate is attached, and an optical signal wire whose one end is connected to the semiconductor substrate inside the package body and the other end is led to the outside of the package body. And a semiconductor device characterized in that the periphery of the lead-out position of the optical signal wire is covered with a resin containing no hard filler.
JP4027966A 1992-02-14 1992-02-14 Semiconductor device Pending JPH05226676A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4027966A JPH05226676A (en) 1992-02-14 1992-02-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4027966A JPH05226676A (en) 1992-02-14 1992-02-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH05226676A true JPH05226676A (en) 1993-09-03

Family

ID=12235637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4027966A Pending JPH05226676A (en) 1992-02-14 1992-02-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH05226676A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001035400A1 (en) * 1999-11-09 2001-05-17 Matsushita Electric Industrial Co. Ltd. Photoelectronic device
US7026756B2 (en) 1996-07-29 2006-04-11 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device with blue light LED and phosphor components

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7026756B2 (en) 1996-07-29 2006-04-11 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device with blue light LED and phosphor components
US7071616B2 (en) 1996-07-29 2006-07-04 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device with blue light led and phosphor components
US7126274B2 (en) 1996-07-29 2006-10-24 Nichia Corporation Light emitting device with blue light LED and phosphor components
US7215074B2 (en) 1996-07-29 2007-05-08 Nichia Corporation Light emitting device with blue light led and phosphor components
US7329988B2 (en) 1996-07-29 2008-02-12 Nichia Corporation Light emitting device with blue light LED and phosphor components
US7362048B2 (en) 1996-07-29 2008-04-22 Nichia Kagaku Kogyo Kabushiki Kaisha Light emitting device with blue light led and phosphor components
US7531960B2 (en) 1996-07-29 2009-05-12 Nichia Corporation Light emitting device with blue light LED and phosphor components
US7682848B2 (en) 1996-07-29 2010-03-23 Nichia Corporation Light emitting device with blue light LED and phosphor components
US9130130B2 (en) 1996-07-29 2015-09-08 Nichia Corporation Light emitting device and display comprising a plurality of light emitting components on mount
WO2001035400A1 (en) * 1999-11-09 2001-05-17 Matsushita Electric Industrial Co. Ltd. Photoelectronic device
US7064898B1 (en) 1999-11-09 2006-06-20 Matsushita Electric Industrial Co., Ltd. Optoelectronic device

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