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JPH049621B2 - - Google Patents

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Publication number
JPH049621B2
JPH049621B2 JP59128974A JP12897484A JPH049621B2 JP H049621 B2 JPH049621 B2 JP H049621B2 JP 59128974 A JP59128974 A JP 59128974A JP 12897484 A JP12897484 A JP 12897484A JP H049621 B2 JPH049621 B2 JP H049621B2
Authority
JP
Japan
Prior art keywords
wire
aluminum alloy
thin
aluminum
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59128974A
Other languages
Japanese (ja)
Other versions
JPS619536A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP59128974A priority Critical patent/JPS619536A/en
Publication of JPS619536A publication Critical patent/JPS619536A/en
Publication of JPH049621B2 publication Critical patent/JPH049621B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
    • H01L24/745—Apparatus for manufacturing wire connectors
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Continuous Casting (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

（発明の分野） この発明は、たとえば巻線導体やとりわけボン
デイングワイヤに用いられるアルミ合金細線の製
造方法に関する。 （先行技術の説明） 電気機器、電子機器および半導体装置等の技術
分野における技術の進歩に伴ない、これらに使用
される導体またはボンデイングワイヤなどにより
高い耐軟化性、高温強度性あるいは細線への加工
性が要求されてきている。従来、たとえば半導体
チツプの外部との接続に際しては、金を主成分と
する貴金属細線が使用されていた。しかし最近で
は、高価な貴金属細線の使用を避けるために、ア
ルミ合金細線の使用が着目されている。 しかしながら、ボンデイングワイヤ用のアルミ
合金細線には以下に述べるような欠点があつた。
すなわち、アルミ合金細線をたとえばボールボン
デイングによつて接続する場合、まず細線の一部
をアーク放電により溶融させ表面張力でボールを
形成し、その後これを熱と超音波の使用によつて
電極に接続する。この場合、アルミ合金細線が加
熱によつて軟化され、そのため強度が著しく低下
してしまうということがある。たとえば、30μm
といつた極細アルミ合金線がアーク放電で溶融さ
れた場合、その近傍の部分も融点近くの温度まで
加熱されて、そのため軟化して強度が著しく低下
してしまい、このネツク部で破断してしまうとい
うことが多かつた。 そのため、高温加熱されても耐軟化性が保証さ
れ得るアルミ合金細線が要望される。しかし、溶
融・鋳造した鋳塊を多数の工程を経て加工してい
くことによつてアルミ合金細線を得る従来の製法
では、耐軟化性を得るのは困難であり、また細線
への伸線加工性を向上させることも困難であつ
た。そこで、急冷アルミ合金粉末を加熱加圧し、
その後これを伸線加工することも試みられた。し
かしながら、この製法では、耐軟化性を満足させ
ることができても、細線への加工性までも満足さ
せることは極めて困難であつた。 （発明の目的） それゆえに、この発明の目的は、耐軟化性と細
線への加工性の両者を満足させることのできるア
ルミ合金細線の製造方法を提供することである。 （発明の構成） 本発明は、Ｖ，Cr，Ti，Mn，希土類元素から
選ばれる１種以上の元素が合計で0.1〜３重量％
添加されたアルミニウム溶融物を冷却液中に噴出
し急冷凝固させることを特徴とするボンデイング
ワイヤ用アルミ合金細線の製造方法である。 「Ｖ，Cr，Ti，Mn，希土類元素のうち少くと
も１種類の元素が添加されたアルミニウ溶融物」
を用いることにより、耐軟化性が著しく向上し、
しかも細線加工性が良く歩留が高くなる。「0.1〜
３重量％」の根拠は、以下の理由に基づく。 即ち、0.1重量％未満の添加量ならば前記改善
に効果がなく、一方３重量％を越えると前記改善
効果が飽和し、かえつて細線加工性を害するおそ
れがある。「冷却液中に噴出し急冷凝固させる」
のは、これにより得られる線の断面形状が真円に
近いものとなりやすく、冷却速度が大きくなり特
性改善の効果が得やすくなるからである。 好ましくは、凝固させた後、少なくとも減面率
50％以上の冷間加工が施される。断面の均一化お
よび強度の向上を果たし得るからである。 「50％以上」とした理由は、50％未満では上記
効果が不充分だからである。 好ましくは、アルミニウム溶融物として、Cu，
Si，Mgからなる群から選ばれる元素の１種以上
を合計で３重量％以下含有されているものを用い
る。これにより、細線強度の改善ができ、特に冷
間加工による強度の著しい改善が可能となる。 「合計で３重量％以下」としたのは、３重量％
を越えれば効果が飽和するとともに、かえつて冷
間加工性を害するおそれがあり、かつ、導電性を
害する。 好ましくは、アルミニウム溶融物として、Be，
Ｂ，Liからなる群から選択される１種以上の元素
が合計で0.001〜0.3重量％含有されているものを
用いる。これにより、溶融状態から冷却液中に噴
出して急冷凝固させる場合、断面形状等が均一で
真円に近い線を得ることが容易となる。 また、半導体装置の配線用ボンデイングワイヤ
としてボールボンデイングする場合、ボールの形
成能を高めることができる。「合計で0.001〜0.3
重量％」の根拠は、0.001％未満ならば上記効果
が不充分であり、0.3％を越えるならば上記効果
が飽和するからである。 また、好ましくは、アルミニウム溶融物を急冷
凝固する方法が、回転するドラム内壁面に遠心力
により層をなして存在する冷却液中に溶融状態の
上記合金をジエツト流として細線に急冷凝固させ
る方法が用いられる。 前述の方法が用いられる理由は、Ｖ，Cr，Ti，
Mn希土類元素を多く含有するアルミニウム溶融
体の前記元素の偏析や折出を抑えるためである。 また、好ましくは、この発明に従つた方法によ
つて得られた線材は、ボンデイングワイヤ等半導
体装置の配線用導体として用いられる。 （実施例の説明） 実施例 １ 第１表に示した組成のアルミ合金を、第１図に
模式的に示す回転液中紡糸装置のるつぼ１内で溶
解した。この溶解は、るつぼ１の周囲に配置され
たヒータ２の加熱により行なつた。次に、るつぼ
１の上方からArガスをるつぼ１内に導入し、そ
の圧力によりアルミニウム溶融物を回転ドラム３
の内壁面に形成された冷却液槽中に、るつぼ１の
低部の丸孔から噴出させた。これにより、直径
0.25mmのアルミ合金細線４が得られた。その後こ
のアルミ合金細線４を直径30μmになるまで伸線
加工した。 比較のため従来の方法として、第１表に示した
組成のアルミ合金を保護雰囲気下に溶製し、これ
を半連続鋳造、熱間押出し、皮剥、冷間伸線およ
び中間焼鈍を経て直径30μmになるまでの伸線加
工を試みた。この発明に従つた製造方法によれ
ば、すべての試料（番号１〜10）を直径30μmに
なるまで高い歩留で伸線加工することができた。 一方、比較される従来の製造方法では、いずれ
も冷間伸線加工性が悪く、少量のサンプル採集の
み可能であつた。 実施例 ２ 本発明による試料番号１〜10の組成の合金線
（30μm）を用いて、ボールボンデイングを実施し
た。すなわち、Arガス雰囲気下で、キヤピラリ
に固定された合金線の先端と電極との間にアーク
を発生させて溶融し、ボールを作製し、これを半
導体素子の電極部にボンデイングした。第２図
は、合金線が半導体素子に接続された状態を示す
図である。図中、５はアルミ合金細線、６はボー
ルボンデイング部、７は電極、８は半導体素子、
９はリードフレーム、１０はステツチボンデイン
グ部、１１はワイヤ中央部を示す。第２図に示す
接続状態から、図中矢印Ａで示すようにアルミ合
金細線５を引張つてその強度テストをしたとこ
ろ、いずれの試料番号の合金細線も、十分大きい
荷重を与えたときワイヤ中央部１１付近で切断し
た。 一方、従来法によるものではボールボンデイン
グ部６付近やステツチボンデイング部１０付近で
切断するものも多かつた。 FIELD OF THE INVENTION The present invention relates to a method for manufacturing fine aluminum alloy wires used, for example, in wire-wound conductors and especially bonding wires. (Description of prior art) With the advancement of technology in the technical field of electrical equipment, electronic equipment, semiconductor devices, etc., the conductors or bonding wires used in these products have improved in their softening resistance, high temperature strength, and processing into fine wires. Sex is now in demand. Conventionally, for example, when connecting a semiconductor chip to the outside, a thin noble metal wire containing gold as a main component has been used. However, recently, attention has been paid to the use of aluminum alloy thin wires in order to avoid the use of expensive precious metal thin wires. However, the aluminum alloy fine wire for bonding wire has the following drawbacks.
In other words, when connecting thin aluminum alloy wires by ball bonding, for example, a portion of the thin wire is first melted by arc discharge to form a ball using surface tension, and then this is connected to an electrode using heat and ultrasonic waves. do. In this case, the aluminum alloy thin wire may be softened by heating, resulting in a significant decrease in strength. For example, 30μm
When an ultra-fine aluminum alloy wire such as this is melted by arc discharge, the parts near it are also heated to a temperature close to the melting point, which softens the wire and significantly reduces its strength, causing it to break at this neck. This happened often. Therefore, there is a need for an aluminum alloy thin wire that can guarantee softening resistance even when heated at high temperatures. However, with the conventional manufacturing method of obtaining fine aluminum alloy wire by processing a molten and cast ingot through multiple processes, it is difficult to obtain softening resistance, and it is difficult to obtain wire drawing processing to make fine wire. It was also difficult to improve sexual performance. Therefore, we heat and press rapidly cooled aluminum alloy powder,
Later, attempts were made to wire-draw this material. However, with this manufacturing method, even if it was possible to satisfy the softening resistance, it was extremely difficult to satisfy the processability into fine wires. (Object of the Invention) Therefore, an object of the present invention is to provide a method for producing a thin aluminum alloy wire that can satisfy both softening resistance and workability into a thin wire. (Structure of the Invention) The present invention is characterized in that the total content of one or more elements selected from V, Cr, Ti, Mn, and rare earth elements is 0.1 to 3% by weight.
This is a method for producing a thin aluminum alloy wire for bonding wire, characterized in that the added molten aluminum is jetted into a cooling liquid and rapidly solidified. "Aluminum melt added with at least one element among V, Cr, Ti, Mn, and rare earth elements"
By using , softening resistance is significantly improved,
In addition, the processability of fine wires is good and the yield is high. "0.1～
3% by weight" is based on the following reasons. That is, if the amount added is less than 0.1% by weight, the above-mentioned improvement will not be effective, while if it exceeds 3% by weight, the above-mentioned improvement effect will be saturated, and there is a possibility that the fine wire processability will be adversely affected. "It is squirted into the coolant and rapidly solidified."
This is because the cross-sectional shape of the wire thus obtained tends to be close to a perfect circle, which increases the cooling rate and makes it easier to obtain the effect of improving characteristics. Preferably, after solidification, at least the area reduction
More than 50% cold working is applied. This is because the cross section can be made uniform and the strength can be improved. The reason why it is set as "50% or more" is that the above effect is insufficient if it is less than 50%. Preferably, as the aluminum melt, Cu,
A material containing at least 3% by weight of one or more elements selected from the group consisting of Si and Mg is used. As a result, it is possible to improve the strength of the fine wire, and in particular, it is possible to significantly improve the strength by cold working. “Total of 3% by weight or less” means 3% by weight.
If it exceeds this, the effect will be saturated, and there is a risk that the cold workability will be adversely affected, and the conductivity will be adversely affected. Preferably, as the aluminum melt, Be,
A material containing a total of 0.001 to 0.3% by weight of one or more elements selected from the group consisting of B and Li is used. This makes it easy to obtain a line with a uniform cross-sectional shape and a nearly perfect circle when it is jetted from a molten state into a cooling liquid and rapidly solidified. Furthermore, when performing ball bonding as a bonding wire for wiring of a semiconductor device, the ability to form a ball can be improved. “Total 0.001 to 0.3
The reason for "% by weight" is that if it is less than 0.001%, the above effect is insufficient, and if it exceeds 0.3%, the above effect is saturated. Preferably, the method for rapidly solidifying the molten aluminum is a method in which the above-mentioned alloy in a molten state is rapidly solidified into a thin wire as a jet flow in a cooling liquid that is present in a layer on the inner wall surface of a rotating drum due to centrifugal force. used. The reason for using the above method is that V, Cr, Ti,
This is to suppress the segregation and precipitation of Mn rare earth elements in an aluminum melt containing a large amount of these elements. Preferably, the wire obtained by the method according to the present invention is used as a wiring conductor of a semiconductor device, such as a bonding wire. (Description of Examples) Example 1 An aluminum alloy having the composition shown in Table 1 was melted in a crucible 1 of a rotating liquid spinning device schematically shown in FIG. This melting was performed by heating with a heater 2 placed around the crucible 1. Next, Ar gas is introduced into the crucible 1 from above the crucible 1, and the pressure causes the aluminum melt to be transferred to the rotating drum 3.
The liquid was ejected from a round hole at the bottom of the crucible 1 into a cooling liquid tank formed on the inner wall surface of the crucible 1. This allows the diameter
A thin aluminum alloy wire 4 of 0.25 mm was obtained. Thereafter, this aluminum alloy thin wire 4 was drawn to a diameter of 30 μm. For comparison, as a conventional method, an aluminum alloy having the composition shown in Table 1 was melted in a protective atmosphere, and then subjected to semi-continuous casting, hot extrusion, stripping, cold wire drawing, and intermediate annealing to form a wire with a diameter of 30 μm. I tried wire drawing processing until it became . According to the manufacturing method according to the present invention, all samples (numbers 1 to 10) could be wire-drawn to a diameter of 30 μm at a high yield. On the other hand, in the conventional manufacturing methods compared, all had poor cold wire drawability, and it was possible to collect only a small amount of samples. Example 2 Ball bonding was performed using alloy wires (30 μm) having compositions of sample numbers 1 to 10 according to the present invention. That is, in an Ar gas atmosphere, an arc was generated between the tip of the alloy wire fixed to the capillary and the electrode to melt it, to produce a ball, which was bonded to the electrode part of the semiconductor element. FIG. 2 is a diagram showing a state in which the alloy wire is connected to a semiconductor element. In the figure, 5 is an aluminum alloy thin wire, 6 is a ball bonding part, 7 is an electrode, 8 is a semiconductor element,
9 is a lead frame, 10 is a stitch bonding portion, and 11 is a wire center portion. When a strength test was conducted by pulling the thin aluminum alloy wire 5 as shown by arrow A in the figure from the connected state shown in FIG. It was cut around 11. On the other hand, in the conventional method, there were many cases in which cutting was performed near the ball bonding part 6 or the stitch bonding part 10.

【表】 （発明の効果） 以上のように、この発明によれば、Ｖ，Cr，
Ti，Mn希土類元素から選ばれる１種以上の元素
が合計で0.1〜３重量％添加されたアルミニウム
溶融物を冷却液中に噴出し、急冷凝固させるため
耐軟化性において優れた細線を得ることができ、
しかも細線化への加工を容易に行なうことができ
る。また、細線化への加工工程が少ないため高い
歩留りで製造が可能である。 この発明は、IC等半導体装置用ボンデイング
ワイヤ、ヒユーズ導体、耐軟化性導体、高温強度
を有する導体などの各種のアルミ合金細線に応用
することができる。[Table] (Effects of the invention) As described above, according to this invention, V, Cr,
A molten aluminum to which a total of 0.1 to 3% by weight of one or more elements selected from rare earth elements selected from Ti and Mn is added is injected into a cooling liquid and rapidly solidified, making it possible to obtain fine wire with excellent softening resistance. I can,
Furthermore, processing to make the wire thinner can be easily performed. In addition, since there are fewer processing steps for thinning the wire, it can be manufactured with a high yield. The present invention can be applied to various aluminum alloy thin wires such as bonding wires for semiconductor devices such as ICs, fuse conductors, softening-resistant conductors, and conductors with high temperature strength.

【図面の簡単な説明】[Brief explanation of drawings]

第１図は、この発明を実施するための装置の一
例を模式的に示す図である。第２図は、この発明
に従つた製造方法によつて得られたアルミ合金細
線を半導体素子に接続した状態の一例を示す図で
ある。 図において、１はるつぼ、２はヒータ、３は回
転ドラム、４はアルミ合金細線、５はアルミ合金
細線、６はボールボンデイング部、７は電極、８
は半導体素子、９はリードフレーム、１０はステ
ツチボンデイング部、１１はワイヤ中央部を示
す。 FIG. 1 is a diagram schematically showing an example of an apparatus for implementing the present invention. FIG. 2 is a diagram showing an example of a state in which a thin aluminum alloy wire obtained by the manufacturing method according to the present invention is connected to a semiconductor element. In the figure, 1 is a crucible, 2 is a heater, 3 is a rotating drum, 4 is an aluminum alloy thin wire, 5 is an aluminum alloy thin wire, 6 is a ball bonding part, 7 is an electrode, 8
1 shows a semiconductor element, 9 a lead frame, 10 a stitch bonding part, and 11 a central part of a wire.

Claims (1)

【特許請求の範囲】 １ Ｖ，Cr，Ti，Mn，希土類元素から選ばれる
元素の１種以上を合計で0.1〜３重量％が添加さ
れたアルミニウム溶融物を冷却液中に噴出し急冷
凝固させることを特徴とするボンデイングワイヤ
用アルミ合金細線の製造方法。 ２ 前記アルミニウム溶融物を凝固させた後、少
なくとも減面率50％以上の冷間加工を行う特許請
求の範囲第１項記載のボンデイングワイヤ用アル
ミ合金細線の製造方法。 ３ 前記アルミニウム溶融物として、Cu，Si，
Mgからなる群から選ばれる１種以上の元素が合
計で３重量％以下含有されているものを用いる特
許請求の範囲第１項又は第２項記載のボンデイン
グワイヤ用アルミ合金細線の製造方法。 ４ 前記アルミニウム溶融物として、Be，Ｂ，
Liからなる群から選ばれる１種以上の元素が合計
で0.001〜0.3重量％含有されているものを用いる
特許請求の範囲第１項ないし第４項のいずれかに
記載のボンデイングワイヤ用アルミ合金細線の製
造方法。 ５ 前記アルミニウム溶融物を急冷凝固させる方
法が、回転するドラム内壁面に遠心力により層を
なして存在する冷却液中に溶融状態の上記合金を
ジエツト流として細線に急冷凝固させる方法であ
る特許請求の範囲第１項又は第２項記載のボンデ
イングワイヤ用アルミ合金細線の製造方法。 ６ 前記線材は、半導体装置の配線用導体として
用いられる特許請求の範囲第１項ないし第５項記
載のいずれかに記載のボンデイングワイヤ用アル
ミ合金細線の製造方法。[Claims] 1. A molten aluminum to which a total of 0.1 to 3% by weight of one or more elements selected from V, Cr, Ti, Mn, and rare earth elements is added is ejected into a cooling liquid and rapidly solidified. A method for producing aluminum alloy fine wire for bonding wire, characterized by: 2. The method for producing a thin aluminum alloy wire for bonding wire according to claim 1, wherein after solidifying the aluminum melt, cold working is performed to have an area reduction of at least 50% or more. 3 As the aluminum melt, Cu, Si,
3. The method for producing a thin aluminum alloy wire for bonding wire according to claim 1 or 2, wherein the wire contains at most 3% by weight of one or more elements selected from the group consisting of Mg. 4 As the aluminum melt, Be, B,
Aluminum alloy thin wire for bonding wire according to any one of claims 1 to 4, which contains a total of 0.001 to 0.3% by weight of one or more elements selected from the group consisting of Li. manufacturing method. 5. A patent claim in which the method for rapidly cooling and solidifying the molten aluminum is a method in which the above alloy in a molten state is rapidly solidified into a thin wire as a jet stream in a cooling liquid that is present in a layer on the inner wall surface of a rotating drum due to centrifugal force. A method for producing a thin aluminum alloy wire for bonding wire according to item 1 or 2. 6. The method for producing a fine aluminum alloy wire for bonding wire according to any one of claims 1 to 5, wherein the wire is used as a wiring conductor for a semiconductor device.
JP59128974A 1984-06-21 1984-06-21 Manufacture of aluminum alloy thin wire Granted JPS619536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59128974A JPS619536A (en) 1984-06-21 1984-06-21 Manufacture of aluminum alloy thin wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59128974A JPS619536A (en) 1984-06-21 1984-06-21 Manufacture of aluminum alloy thin wire

Publications (2)

Publication Number Publication Date
JPS619536A JPS619536A (en) 1986-01-17
JPH049621B2 true JPH049621B2 (en) 1992-02-20

Family

ID=14998007

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59128974A Granted JPS619536A (en) 1984-06-21 1984-06-21 Manufacture of aluminum alloy thin wire

Country Status (1)

Country Link
JP (1) JPS619536A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61136654A (en) * 1984-12-08 1986-06-24 Nippon Light Metal Co Ltd Hyperfine aluminum wire
JPH0654787B2 (en) * 1985-06-24 1994-07-20 住友電気工業株式会社 Bonding wire
JPS62228446A (en) * 1985-11-29 1987-10-07 Nippon Mining Co Ltd Aluminum alloy for semiconductor wiring materials
JPS62235452A (en) * 1986-04-03 1987-10-15 Nippon Mining Co Ltd B-containing al alloy for semiconductor wiring material
JPS62235451A (en) * 1986-04-03 1987-10-15 Nippon Mining Co Ltd Al alloy for semiconductor wiring materials
JPS62240733A (en) * 1986-04-11 1987-10-21 Nippon Mining Co Ltd B-containing aluminum alloy for semiconductor wiring material
JPS63206198A (en) * 1987-02-20 1988-08-25 Kubota Ltd engine generator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49134546A (en) * 1973-04-30 1974-12-25
JPS6038228B2 (en) * 1978-11-10 1985-08-30 逸雄 大中 Manufacturing method of thin metal wire

Also Published As

Publication number Publication date
JPS619536A (en) 1986-01-17

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