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JPH0461220A - Wafer holding device for x-ray aligner use - Google Patents

Wafer holding device for x-ray aligner use

Info

Publication number
JPH0461220A
JPH0461220A JP2169938A JP16993890A JPH0461220A JP H0461220 A JPH0461220 A JP H0461220A JP 2169938 A JP2169938 A JP 2169938A JP 16993890 A JP16993890 A JP 16993890A JP H0461220 A JPH0461220 A JP H0461220A
Authority
JP
Japan
Prior art keywords
pressure
wafer
suction
differential pressure
pressure sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2169938A
Other languages
Japanese (ja)
Other versions
JP2880262B2 (en
Inventor
Tetsuzo Mori
森 哲三
Koji Marumo
丸茂 光司
Kazunori Iwamoto
岩本 和徳
Yuji Chiba
千葉 裕司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP16993890A priority Critical patent/JP2880262B2/en
Priority to EP91305730A priority patent/EP0463853B1/en
Priority to DE69130434T priority patent/DE69130434T2/en
Priority to US07/723,336 priority patent/US5191218A/en
Publication of JPH0461220A publication Critical patent/JPH0461220A/en
Application granted granted Critical
Publication of JP2880262B2 publication Critical patent/JP2880262B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE:To enhance a yield and a productivity at an ultrafine processing operation by providing a control circuit which outputs an instruction signal instructing to start a next process when it confirms that a pressure, inside a suction tube at the inside of a hermetically sealed space, which is indicated by an output signal from a pressure sensor has become smaller than a prescribed value. CONSTITUTION:A pressure sensor 5 detects a differential pressure P between a pressure inside a suction tube 8 and an outside air pressure; it outputs a signal indicating said differential pressure P to a control circuit 10. The difference between a pressure, on the surface of a wafer, which is required to vacuumsuck and hold a wafer and a pressure on the rear, i.e., a prescribed differential pressure P0, is designated as a differential pressure PX1. When it is confirmed that the differential pressure P indicated by the output signal of the pressure sensor 5 has become larger than the prescribed differential pressure P0 (=PX1), an instruction signal instructing to start a next process, e.g. an instruction signal instructing to advance a wafer holding device for an X-ray aligner to an exposure position of the wafer, is output to a control circuit 10. Thereby, it is possible to vacuum-suck the wafer by using a suction force of a required minimum and in the evacuation time of a required minimum.

Description

【発明の詳細な説明】[Detailed description of the invention]

[産業上の利用分野] 本発明は、ウェハに超微細加工を施す、シンクロトロン
放射光を光源とするX線露光装置用ウェハ保持装置に関
するものである。 [従来の技術] 半導体製造装置において、マスクパターンをウェハに転
写する際のウェハ保持装置としては、該ウェハの裏面を
真空吸着して保持する真空吸着式ウェハ保持装置(たと
えば、特公平1.−14703号公報)がよく用いられ
ている。 第5図(A)、CB)はそれぞれ真空吸着式ウェハ保持
装置の一例を示す図である。 この真空吸着式ウェハ保持装置は、その裏面な真空吸着
することによりウェハ(不図示)を保持する保持台40
1と、前記ウェハな真空吸着づ−るための排気ポンプ4
06と、排気ポンプ406と後述する吸引管408とを
接続する配管404と、配管’404の排気ポンプ40
6と保持台401どの間に設D−jられているバルブ4
07と、配管404のバルブ407と保持台401 と
の間に設けられでいる、配管404内の圧力と導入管4
11から導入される外気の圧力(以゛1、「外気圧」と
称する6)との差圧力を検出する圧力センサ405と、
圧力センサ405の出力信号により、該出力信号が示す
差圧力が所定の値よりも大きくなったことを確認すると
、次の工程へ進ませる指示信号(たとえば、この真空吸
着式ウェハ保持装置をウニ、ハの露光位置まで進ませる
指示信号)を出力する制御回路410とを有する。 ここで、保持台401は、真空吸着さオ〕た前記ウェハ
の平坦度を保つために平面仕上げされている吸着面40
2と、吸着面402の中心部に1個および吸着面402
に刻まねた2本の同心円状の満409409□にそれぞ
れ4個ずつ(第4図(A)図示十1・と左右)設けられ
ている吸引[]403と、各吸引[−1403と配管4
04どを接続オる吸引管408とを備えている。また、
バルブ407i、コ、閉じた状態で;づ、配管4(]4
内と外部空間とを連通させ、開いた状態では配管404
内と排気ポンプ406とを連通さゼるものである。 この真空吸着式つlハ保持装置では、真空成心されるつ
」ハは、保持台401の吸着面402と接触する位置ま
で公知の搬送ハンド(不図示)により搬送さねでくる。 その後、バルブ407が開かれて、前記搬送されてきた
ウェハと吸着面402および吸着面402に刻まれた2
本の同心円状の溝4[191,4092とにより形成さ
れる空間(以]、「密閉空間」と称する。)内にある気
体が、各吸引11403、吸引管40Bおよび配管40
4を介しで排気ポンプ406で排出されることにより、
前記ウェハの裏面が真空吸着される。このとき、汀カセ
ンサ405は、配管404内の圧力と外気圧との差圧力
を検出し、該差圧力を示す信号を制御回路410iこ出
力する。制御回路410は、圧力センサ405の出力信
号が示す差圧力が所定値よりも人きくなったことを確認
すると前記指示信号を出力する。 一方、前記ウェハの真空吸着を解除−4る場合には、バ
ルブ407が閉じられて、配管404内に外気が送り込
まねる。 [発明が解決しようとする課題] しかしながら、」−記の真空吸着式ウェハ保持装置では
、圧力センサ405の取付場所が配管404のバルブ4
07と保持台401との間であるため、現在実用化され
ている遠紫外光などを光源とする露光装置で行われてい
る程度の微細前]Iでは問題ないが、シンクロトロン放
射光を光源とするX線露光装置(たとλば、特願昭63
−252991号)を用いて前記ウェハに超微細加工を
施す場合などでは、以下に示す理由により、歩留まりの
低下および生産性の低下を招くという問題が新たに生じ
た。 (1)圧力センサ405で検出しまた配管404内の圧
力は、配管404および吸引管408の構造が実際には
複雑であるため、前記密閉空間内のB・力との相違が生
じる。 (2)前記差圧力は、この真空吸着式ウェハ保持装置が
匠かねている空間の雰囲気およびウェハの裏面の状態に
、Lっで違ってくるため、前記差圧力を高い精度で求め
ることはり1常に困難であり、圧カセンザ405て検出
した差圧力から前記密閉空間内の圧力を正確に推定1”
ること(、」容易でない。 (3)、、J−記理由により前記密閉空間内の圧力を正
確に推定すること!−容易でないため、圧力センサ40
5て検出した前記差圧力が十分小さくな−)だのちに次
のゴー程へ進ませざるをえず、最大吸着力が過大となり
、真空吸着さねでいるウェハにねづ′かな歪を発生させ
るが、該ウェハに超微細加工を施す場合には、該ウェハ
(こ生じるわずかな歪てもパターン転写精度の劣化を招
くので、歩留まりの低下を招く。さらに、ウェハの吸着
動作に余分な時間がかかり、生産性の低下を招くという
問題も生じる。 本発明の目的は、最小限の吸着時間でかつ最適な吸着力
でつ」−、ハを吸着1..たのち次σれ1稈へ、辺J−
せることζこより、超微細加]−時の歩留まりのr:j
−r−6および生産性の同士が図オフるX線露光装置用
つ、lハ保持装置を提供することζJある。 〔課題を解決するだめの手段J 本発明のX線露光装置用つj−ハ保持装置は、保持台内
に設けられた、密閉空間内」たは吸引管内の圧力を検出
するL1カヒンザと、を圧カセンザの出力信号が供給さ
j7、該出力信号が示す前記密閉空間内J:たは前記吸
引り内の1力が、所定の値よりも小さくなったごとを確
認づ゛ると、次の工程へ進ませる指・示イ3号を出力り
る制御回路とを有する。 また、前記保持台内に設けられた、外気か導入される導
入管を有し、 前記圧力センサが、前記密閉空間内または前記吸引管内
の圧力と外気圧との差圧力を検出し、Tもよい。 さら(こ、排気時間をW+ 1i111′るタイマをイ
ーコシ、2、前記制御回路が、前記圧力センサの出力化
℃か7バiJ−AiU紀け1・閏空開内または前He吸
引管内の1)ノ1が所定の値よりも小さくなったどきの
前記タイマが示4゛排気時間が、所定の排気時間よりも
太きいか舎かを判定Δる判定4段を杓して“いCもよい
。 [信用コ 4発明のX線露光装置用つJ゛ハ保掲装置τ“は、11
′カセンザを保持台内に設6づて、密閉空間内また(J
吸引管内の圧力を検出するため、このX線露光装置用つ
、〕−ハ保持装置が置か第1でいる空間の雰囲気おJび
真空吸着されるつ、〕ハの裏面の状態(、′°関わりな
く該つ、I−ハの裏面の1王力を高い精度で検出するご
とができる。 また、前記比カセンサが、前記密閉空間内または前記吸
引管内の圧力と、保持台内に設けられた導入上より導入
される外気の圧力(外気圧)との差1]力を検出するこ
とにより、前記密閉空間内または前記吸引管内の圧力を
直接検出4る場合に比べて、前記保持台付近の外気■が
変化シ5.でも、ウェハの表面の圧力と裏面の圧力との
差を正確に検出(ることができる。 さらに、排気時間をg1測するタイマを有し、[11」
配圧カセンサで検出した前記密閉空間内または前記吸引
管内の圧力が、所定の排気時間内(、ご所定の値よりも
小さくなった場合にのみ、制御回路に次の工程へ進ませ
る指示信号を出力さセることi:= 、1.:す、前記
ウェハの表面の圧力と裏面の1]−力との差を最適値に
設定することがでさるため、最適な吸着力で前記ウェハ
を吸着することができ、該ウェハに発生ずる歪を最小限
に抑えることができるとともに、該ウェハを真空吸着す
るのに必要な)、11気時間を最小限にすることができ
るため、最小限の吸着時間で前記ウェハを真空吸着する
ことが−Cきる。 [実施例] 次に、本発明の実施例について図面を参照しで説明する
。 第1図(A)、(B)はそれぞれ本発明のX線露光装置
用ウェハ保持装置の第1の実施例を示す図である。 本実施例のX線露光装置用ウェハ保持装置は、イの裏面
を真空吸着するごとによりウェハ(不図示)を保持−づ
る保持台1と、前記ウェハを真空吸m−fるための排気
ポンプ6と、tノド気ポンプ6ど後述″くる吸引管8と
を接続する配管4と、配管4の排気ポンプ6と保持台l
との間に設CJらねでいるバルブ7とを有し、保持台1
が、真空吸着後のnTj記つJハの平坦度を保つために
平面仕上げさねでいる吸着面2と、吸着面2の中心部に
1個および吸着面2(、−刻まオ]た2本の同心円状の
溝91.92にそれぞれ4個ずつ(第1図(A)図示+
)と左右)設りらねている吸引口3と、各吸引[]3と
配管4ど接続づる吸引管8とを備えている点については
、第5図に示した真空吸着式ウェハ保持装置と同じであ
る。しかし、圧力七ン勺5が、保持台1の内部に設U′
jられ、圧力センサ5と外部空間とを接続する導入管1
1から導入される外気の圧力(外気f31)と吸引管8
内の圧力との差圧ノ〕を検出し、また、排気時間を計測
するタイマ12が設けられ、さらに、制御回路10が、
圧力センサ5の出力信号が示す吸引管8内の圧力が所定
の値よりも小さくな−〕たときのクイマ12が示1排気
時間が、所定の排気時間よりも大きいか否か4・判定す
る判定手段10+を有する点が、第5図に示(2だ真空
吸着式ウェハ保持装置と異なる。 ここで、バルブ7は、第5図に示したバルブ407と同
様に、閉じた状態では配管4内と外部空間とを連通させ
、開いた状態では配管4内と1シト気ポンプ6とを連通
させるものである。 次に、本実施例のX線露光装置用ウユ−ハ保持装置の動
作について、第2図および第3図を用い″C説明する。 保持台1に真空吸着されるウェハは、保持台1の吸着面
2と接触する位置まで公知の搬送ハント(不図示)によ
り搬送されてくる。その後、バルブ7が開かれて、前記
搬送されてきたウェハと吸着面2および吸着面2に刻ま
れた2本の同心円状の溝91.92とにより形成される
空間(密閉空間)内にある気体が、各吸引口3.吸引管
8および配管4を介して排気ポンプ6で排出されること
により、前記ウニへの裏面が真空吸着される。圧カセン
ザ5は、吸引管8内の圧力と外気丹との差圧力Pを検出
し、該差圧力Pを示′1′信号を制御回路10に出力す
る。 このとき、前記密閉空間に外気からの漏t1がない場合
(Jおける真空吸着開始からの排気時間tと、汁カセ>
+1′5のH11信号が示す差11力Pとの関係は、た
とえば第2図に実線で示すものとなる。 すなわち、前記ウニ7八を真空吸着する前(排気時間1
−O)では、バルブ7が一度閉
[Industrial Application Field] The present invention relates to a wafer holding device for an X-ray exposure apparatus that uses synchrotron radiation as a light source and performs ultrafine processing on a wafer. [Prior Art] In semiconductor manufacturing equipment, as a wafer holding device when transferring a mask pattern onto a wafer, a vacuum suction type wafer holding device that holds the back side of the wafer by vacuum suction (for example, Patent Publication No. 1. 14703) is often used. FIGS. 5(A) and 5(CB) are diagrams each showing an example of a vacuum suction type wafer holding device. This vacuum suction type wafer holding device uses a holding table 40 that holds a wafer (not shown) by vacuum suction on the back side of the wafer holding device.
1, and an exhaust pump 4 for vacuum suctioning the wafer.
06, a pipe 404 connecting the exhaust pump 406 and a suction pipe 408 described later, and the exhaust pump 40 of the pipe '404.
6 and the holding table 401.
07, the pressure inside the pipe 404 and the introduction pipe 4 provided between the valve 407 of the pipe 404 and the holding table 401.
a pressure sensor 405 that detects the pressure difference between the pressure of outside air introduced from 11 (hereinafter referred to as 1, "external pressure"6);
When it is confirmed by the output signal of the pressure sensor 405 that the differential pressure indicated by the output signal has become larger than a predetermined value, an instruction signal is sent to proceed to the next process (for example, if the vacuum suction type wafer holding device is A control circuit 410 outputs an instruction signal for advancing the camera to the exposure position (c). Here, the holding table 401 has a suction surface 40 which is finished flat in order to maintain the flatness of the wafer that is vacuum suctioned.
2, one at the center of the suction surface 402, and one at the center of the suction surface 402.
Suction [] 403, each suction [-1403 and piping 4], are provided in two concentric circles shaped like 409409□ (Fig.
04 and a suction tube 408 to which it is connected. Also,
Valve 407i, closed; Piping 4 (]4
Piping 404 communicates between the inside and outside space, and in the open state
The interior of the exhaust pump 406 is communicated with the exhaust pump 406. In this vacuum suction type tube holding device, the vacuum-centered tube is conveyed by a known conveying hand (not shown) to a position where it contacts the suction surface 402 of the holding table 401. After that, the valve 407 is opened, and the transferred wafer and the suction surface 402 and the two engraved on the suction surface 402 are attached.
The gas in the space (hereinafter referred to as the "sealed space") formed by the concentric grooves 4 [191, 4092] of the book is
4 and is exhausted by the exhaust pump 406,
The back surface of the wafer is vacuum-adsorbed. At this time, the pressure sensor 405 detects a pressure difference between the pressure inside the pipe 404 and the outside air pressure, and outputs a signal indicating the pressure difference to the control circuit 410i. When the control circuit 410 confirms that the differential pressure indicated by the output signal of the pressure sensor 405 has become stronger than a predetermined value, it outputs the instruction signal. On the other hand, when the vacuum suction of the wafer is canceled -4, the valve 407 is closed and outside air is not sent into the pipe 404. [Problems to be Solved by the Invention] However, in the vacuum suction type wafer holding device described in "-", the pressure sensor 405 is installed at the valve 4 of the piping 404.
07 and the holding table 401, there is no problem with [I]I, which is as fine as that used in exposure equipment that uses far ultraviolet light as a light source, which is currently in practical use, but synchrotron radiation is used as a light source. X-ray exposure equipment (for example, λ, patent application 1986)
252991), new problems have arisen in which the yield and productivity are lowered for the following reasons. (1) The pressure inside the pipe 404 detected by the pressure sensor 405 differs from the B force inside the sealed space because the structures of the pipe 404 and the suction pipe 408 are actually complicated. (2) The differential pressure varies depending on the atmosphere of the space that this vacuum adsorption type wafer holding device cannot control and the condition of the back side of the wafer. Therefore, it is difficult to obtain the differential pressure with high accuracy. It is difficult to accurately estimate the pressure in the sealed space from the differential pressure detected by the pressure sensor 405.
It is not easy to accurately estimate the pressure in the closed space.
If the differential pressure detected in step 5 is not sufficiently small (-), the wafer must proceed to the next step, and the maximum adsorption force becomes excessive, causing severe distortion in the wafer being vacuum-adsorbed. However, when performing ultra-fine processing on the wafer, even the slightest distortion of the wafer causes a deterioration in pattern transfer accuracy, resulting in a decrease in yield.Furthermore, it takes extra time for the wafer suction operation. The purpose of the present invention is to adsorb 1... and then move σ to 1 culm with the minimum adsorption time and optimal adsorption force. , side J−
From this, ultra-fine machining] - yield r: j
It is an object of the present invention to provide a holding device for an X-ray exposure apparatus which has a high productivity and productivity. [Means for Solving the Problems J] The holding device for an X-ray exposure apparatus of the present invention includes an L1 kahinza that is provided in a holding table and detects the pressure in a closed space or in a suction pipe; When the output signal of the pressure sensor is supplied, and each time the force in the closed space or the suction indicated by the output signal becomes smaller than a predetermined value, the following occurs. It has a control circuit that outputs an instruction No. 3 to proceed to the process. Further, the holding table includes an introduction pipe through which outside air is introduced, and the pressure sensor detects a pressure difference between the pressure inside the closed space or the suction pipe and the outside air pressure, and the T good. Furthermore, the timer that determines the exhaust time is W ) When 1 becomes smaller than a predetermined value, the timer indicates 4. It is determined whether the exhaust time is longer than the predetermined exhaust time or not. Good. [Credit Co. 4 invention of X-ray exposure device J゛ha storage device τ'' is 11
'Install the Kasenza in the holding stand and place it in a closed space or (J
In order to detect the pressure inside the suction tube, this It is possible to detect the 1st force on the back side of I-Ha with high accuracy regardless of the relationship between the pressure sensor and the pressure inside the closed space or the suction pipe. By detecting the pressure (1) of the outside air introduced from the introduction (external pressure), the pressure in the closed space or in the suction pipe can be directly detected (4). Even if the outside air changes (5), the difference between the pressure on the front surface and the pressure on the back surface of the wafer can be accurately detected.Furthermore, it has a timer to measure the exhaust time g1,
Only when the pressure in the sealed space or in the suction pipe detected by the pressure distribution sensor becomes smaller than a predetermined value within a predetermined evacuation time, an instruction signal is sent to the control circuit to proceed to the next process. Since the difference between the pressure on the front surface of the wafer and the pressure on the back surface of the wafer can be set to an optimal value, the wafer can be held with the optimal adsorption force. The wafer can be vacuum-adsorbed, and the strain generated on the wafer can be minimized, and the time required to vacuum-adsorb the wafer can be minimized. The wafer can be vacuum-chucking within the suction time -C. [Example] Next, an example of the present invention will be described with reference to the drawings. FIGS. 1A and 1B are views showing a first embodiment of a wafer holding device for an X-ray exposure apparatus according to the present invention, respectively. The wafer holding device for an X-ray exposure apparatus according to this embodiment includes a holding table 1 for holding a wafer (not shown) each time the back side of the wafer is vacuum-suctioned, and an exhaust pump for vacuum-suctioning the wafer. 6 and the suction pipe 8 that comes with the throat air pump 6, which will be described later, and the exhaust pump 6 of the pipe 4 and the holding stand l.
and a valve 7 installed between the holding table 1 and the holding table 1.
However, in order to maintain the flatness of nTj after vacuum suction, there is a suction surface 2 with flat finishing grooves, one in the center of the suction surface 2, and one on the suction surface 2 (, - carved o). 4 each in the concentric grooves 91 and 92 of the book (Fig. 1 (A)
) and left and right), and a suction pipe 8 that connects each suction [ ] 3 to the piping 4, it is different from the vacuum suction type wafer holding device shown in FIG. It's the same. However, the pressure regulator 5 is installed inside the holding table 1.
An introduction pipe 1 that connects the pressure sensor 5 and the external space.
The pressure of outside air introduced from 1 (outside air f31) and the suction pipe 8
A timer 12 is provided to detect the differential pressure between the internal pressure and the internal pressure, and also to measure the evacuation time.Furthermore, the control circuit 10
When the pressure in the suction pipe 8 indicated by the output signal of the pressure sensor 5 is smaller than a predetermined value, the exhaust time indicated by the pressure sensor 12 is determined 4. Whether or not the exhaust time is greater than the predetermined exhaust time. It differs from the vacuum adsorption type wafer holding device shown in FIG. It communicates between the inside and outside space, and in the open state, communicates between the inside of the pipe 4 and the single air pump 6.Next, the operation of the vacuum holding device for the X-ray exposure apparatus of this embodiment will be explained. , will be explained using FIG. 2 and FIG. After that, the valve 7 is opened, and the space (sealed space) formed by the transferred wafer, the suction surface 2, and the two concentric grooves 91 and 92 cut in the suction surface 2 is opened. The gas in the sea urchin is discharged by the exhaust pump 6 through each suction port 3, the suction pipe 8, and the piping 4, so that the back side of the sea urchin is vacuum-adsorbed. The differential pressure P between the pressure and the outside air is detected, and a '1' signal indicating the differential pressure P is output to the control circuit 10. At this time, if there is no leakage t1 from the outside air in the sealed space (vacuum in J Exhaust time t from the start of adsorption and juice cassette>
The relationship between the H11 signal of +1'5 and the differential force P is as shown, for example, by the solid line in FIG. That is, before the sea urchin 78 is vacuum-adsorbed (exhaust time 1
-O), valve 7 is closed once.

【、2られ″(配管4内
と外部空間とが連通させられるため、吸引管8内の圧力
は外気圧と等しくなり、前記差圧力P = 0  [T
orrl となる。その後、aij記ウェハの真空吸着
が開始されると、吸引管8内のBE力は排気が進むに従
って低下していくため、前記差圧カド)は増加していき
、点Aで示す排気時間t ” j +では前記差圧力P
”Px+、点Cで示す排気時間t’、’ =i; 2て
は前記差圧力P=PX2および点にで丞ず排気時間t 
” j 3では前記差圧力P=PX3となる。 ここで、前記ウェハを真空吸着して保持するために必要
な該ウェハの表面の圧力と裏面の圧力との差(以下、「
所定の差圧力」と称づる。) F)。 を第2図に点Aで示す差圧力P xtaすると、圧力セ
ンサ5で検出される吸引管8内の圧力と外気圧との差圧
力は、真空吸着されているつJハの表面の圧力と裏面の
圧力との差と精度よく対応しでいるため、圧力センサ5
の出力信号が示す差圧力Pが前記所定の差圧力P o 
(= P xt)よりも大きくなったこと(すなわち、
吸引管8内の圧力が所定の値よりも小さくなったこと)
を確認しまたときに、制御回路10に、次の工程へ進ま
せる指示信号(たとえば、このX線露光装置用ウェハ保
持装置をウェハの露光位置まで進ませる指示信号)を出
力させることにより、必要最小限の吸引力で、また必要
最小限の排気時間で前記ウェハを真空吸着することがで
きる。 また、以上の説明では、前記密閉空間に外気からの漏れ
がないとしたが、実際には、ウェハの歪、ウェハの裏面
に付着したごみやウェハを吸着面2に戴置する際の該ウ
ェハと吸着面2との位置関係により、fvj記密閉空間
には外気からの漏第1が牛しる。この場合における真空
吸着開始からの排気時間tと、圧力センサ5の出力信号
が示す差圧力Pどの関係は、たとえば第2図に破線で示
すものとなり、同じ排気時間tにおける前記差圧力1つ
は、前記密閉空間に外気からの漏れがない場合に比へて
小さくなる。すなわち、点Bて示す排気時間tコt1で
は前記差圧力P=Pyi(Py+<p、l、)および点
r)で示す排気時間t ” t 2では前記差圧力P 
= P Y2 (P Y2< P−2)となる。 しかし、本実施例のX線露光装置用ウェハ保持装置では
、圧力セン+j5の出力信号が示す差圧力■〕は、真空
吸着されているウェハの表面の圧力と裏面の圧力との差
と精度よく対応しているため、前記差圧力Pが前記所定
の差圧力P。(”PX=)よりも大きくなったことを確
認したとき(第2図の排気時間t=t2)に、制御回路
10に前記指示信号を出力させることにより、前記密閉
空間に外気からの漏れが生じた場合においても、必要最
小限の吸引力で、また必要最小限の排気時間で前記ウェ
ハを真空吸着することができる。 さらに、前記密閉空間への外気からの最大許容漏れが生
じたときの前記抽気時間tと前記差圧力Pとの関係を予
め測定しておき、この場合の前記。 差圧力r)が前記所定の差圧力P。(=px、)どなる
ときの排気時間1.(第2図−点鎖線で示す場合には、
点Fで示す排気時間t=ts)を求めておき、該排気時
間t−taを所定の排気時間′]゛。とじで設定してお
くことにより、タイマ12で計測しまたウェハの真空吸
着開始からの排気時間tが所定の排気時間ゴ。(= t
 2)よりも大きくなっても、圧力センづ5の出力信号
が示す差圧力Pが前記所定の差圧ノ月)。(=Px+)
よりも大きくならないときには、制御回路10に、ウニ
への真空吸着を中止させる指示信号や異常を知らせる信
号を出力させることもできる。 したがって、制御回路10および判定手段10□を第3
図に示すフローチャートに従って動作させることにより
、歩留まりの向上、および生産性の同士が図オlる。 すなわち、制御回路10は、ウェハの真空成層が開始さ
れると、汀カセン→15の11−)力f5号どタイマ1
2の出力信号とを読込1; (ステップ71)、そして
、判定り段10.は、タイマ12の出力fiM号が示す
排気時間1が所定の排気時間T。よりも大きいか否かを
判定しくステップ72)、前a−JJi気時間i、が前
記所定の排気時間I゛。よりも太きいときには、たとえ
ば異常を知らせる信号を制御回路10かへ出力させる(
ステップ゛73)。 ツノ、i?ii記排気時間tが前
記所定の排気時間゛1′。よりも小さいとぎに(j、圧
カセ:)世5の出カイ、コ号が示″<差圧力Pが所定の
差圧力I〕。よりも人きいか否かを判定しくステップ7
4)、前記差圧力F)が前記所定の差圧力■)。よりも
小さいときにはステップ7】の動作に戻す。また、前記
差圧力Pが前記所定の差圧力P。よりも人きいときに(
」、前記指示信号を制御回路]0から出力させる(ステ
ップ75)。 なお、ウェハの真空吸着を解除する場合にけ、バルブ7
が閉じられ℃、配管4内に外気が送り込まれる。 本実施例のX線露光装置用ウェハ保持装置マ。 は、保持台1の下部に圧力センサ5を設(づ、吸弓管8
の保持台]の下部に近い位置から吸引管8内の気体を導
入することにより、保持台1内に露光中のウェハを冷却
オるための冷却水用の配管が設けられた場合でも、圧力
センサ5の設置場所が確保できるようにしている。 第4図FA)、(B)はそれぞれ本発明のX線露光装置
用ウェハ保持装置の第2の実施例を示す図である。 本実施例のX線露光装置用ウェハ保持装置は、第4図(
B)に示すように、保持台31内に設けらねた圧力セン
+j35が、保持台31の吸着面32に設けられた外側
の同心円状の溝39□の第4図(A)図示左斜めFに設
けられた導入[]46より第2の導入管45を介して導
入さオ]る密閉空間内の圧力と、第]の導入管41を介
して導入される外気の圧力(外気圧)との差圧力を検出
し、また、排気時間を計測するタイマを有セず、さらに
、制御回路40が第1図に示す判定手段10を有しない
点が、第1図に示しまたものと異なる。 したがって、本実施例のX線露光装置用ウェハ保持装置
ては、圧力センサ35が前記密閉空間内の圧力を用いて
前記差圧力を検出するため、真空吸着さ、1]るウェハ
の裏面の圧力を第1図に示したものよりも精度よく検出
することができる。 また、制御回路40は、圧力セン→j−35の出力信号
が示す前記密閉空間内の圧力が所定の圧力よりも小さく
なったことを確認すると、次の[1程へ進ませる指示伝
号を出力する機能のみ有する。 さらに、本実施例のX線露光装置用ウェハ保持装置でも
、保持台ご31の下部に圧力セン”j 35を設置−、
t、第2の導入管45を介して前記密閉空間内の気体を
導入するごとにより、保持台31内に露光中のウェハを
冷却するための冷却水用の配管が設けられた場合でも、
圧力センサ35の設置場所が確保できるようにしている
。 本実施例においても、排気時間を計測するり・イ?を設
番−)る4■:どもj、二、制御同弄14(月こ第1図
1:l i1ζ4−判辻:1−段10 、を設(jるご
どにより、所)j−゛のIノ1気1]ら開山に、汁カセ
ニ・→f 3 E)の出カイ6:じか小′ツ、子圧力が
所定の差圧力よりも入きくな・2)たこと(6なわち、
前記密閉空間内の圧力が1ヅ1辻ス1り仙よりも小さく
な−)たこと)を確認シ、たどきに、制御回路40に、
次の上程へ進−J°セるjh示伯号(たど2ば、このX
線露光装道゛用rj) 、1.ハ保袖装置をつ」ハの露
光位置:FC進まセる指小借し)を出力さセるようζこ
(、ζ−もよい。 以−1の説明においで、第1図に小(、またE(カセ二
づ;)および第・1図に小し1.た圧ノJセンサ35ば
、吟引盾8内また(、i前記密閉空間内の圧力と開気1
1二との差11−力を検出するものて′あ−2)だが、
吸引−2・3内または前記密閉空間内の汗力な直接検出
するものであ−っでもよい。特に、夕(気Eが−・定の
値(こ”なるように管理されているどきには、0マ]記
考圧力を検出”4る必要1a特にない。な、1.15、
この場6に;7i、前記?つのに)ニカセン4,11.
.5.35ζご外気を導入する必要かないため、導入へ
11および第1の導入盾、14 ]、、 i、J)lX
要どなる・、1゛か、吸引管8内また(」前記密閉空間
内の1Lカを直接検出する場合には、ロー トセルから
なるj]−。 カセ゛1.・・→ノを1.吸引管8内また(=、萌記達
・閉空間内の住意の場所に設げでもよい。 さL“)(コ1、保持台の吸百面の形状どし2.1−は
、誤保持台の真空吸着さオχるつJハの裏面ど対向′ツ
゛る而に、複数の円↑」状の突起部を設(、jたビ′・
fヤ・ソク力式によるものなとてあってもよい。 し発明の効] 本発明は、]。述のとおり構成X\frでいるのこ”、
次に記結、鳴る効果を奏″する。 密閉空間内または吸引管内の圧力を圧カセンザで検出し
、該検出したFl力が所定の値よりも小さくな−)だと
きに、制御回路が次の丁稈へ進ませる指し」−1信号を
出力することにより、最適な吸着力でウーrハを吸着す
ることができ、該つ■−ハに発44H,−Fる歪を最小
限に抑えられるとともC1′、最小限の吸着時間で前記
ウユハを真空吸着ぐることがてきるため、超微細加工時
の歩留まりの同士およびaJi性の向りが図れるという
効果がある。
[, 2'' (Since the inside of the pipe 4 and the outside space are communicated, the pressure inside the suction pipe 8 becomes equal to the outside air pressure, and the differential pressure P = 0 [T
It becomes orrl. Thereafter, when the vacuum suction of the wafer aij is started, the BE force in the suction tube 8 decreases as the evacuation progresses, so the differential pressure (K) increases, and the evacuation time t shown at point A ” At +, the differential pressure P
``Px+, exhaust time t', '=i shown at point C; 2, the differential pressure P=PX2 and the exhaust time t shown at point C
” j 3, the differential pressure P=PX3. Here, the difference between the pressure on the front surface of the wafer and the pressure on the back surface of the wafer (hereinafter referred to as "
"predetermined differential pressure". ) F). Then, the pressure difference between the pressure inside the suction pipe 8 detected by the pressure sensor 5 and the outside atmospheric pressure is equal to the pressure on the surface of the tube being vacuum-adsorbed. Pressure sensor 5 responds accurately to the difference in pressure on the back side.
The differential pressure P indicated by the output signal of is the predetermined differential pressure P o
(= P xt) (i.e.,
(The pressure inside the suction tube 8 has become smaller than a predetermined value)
When necessary, the control circuit 10 outputs an instruction signal to proceed to the next process (for example, an instruction signal to advance the wafer holding device for the X-ray exposure apparatus to the wafer exposure position). The wafer can be vacuum-adsorbed with the minimum suction force and with the minimum necessary evacuation time. In addition, in the above explanation, it is assumed that there is no leakage from the outside air into the sealed space, but in reality, distortion of the wafer, dust attached to the back side of the wafer, and the wafer when the wafer is placed on the suction surface 2 are caused. Due to the positional relationship between the suction surface 2 and the suction surface 2, leakage from outside air occurs in the closed space. In this case, the relationship between the evacuation time t from the start of vacuum suction and the differential pressure P indicated by the output signal of the pressure sensor 5 is, for example, as shown by the broken line in FIG. 2, and the differential pressure 1 at the same evacuation time t is , becomes smaller than when there is no leakage from the outside air into the sealed space. That is, at the exhaust time t shown at point B and t1, the differential pressure P=Pyi (Py+<p, l,) and point r), and at the exhaust time t'' t2, the differential pressure P
= PY2 (PY2<P-2). However, in the wafer holding device for the X-ray exposure apparatus of this embodiment, the differential pressure (■) indicated by the output signal of the pressure sensor Therefore, the differential pressure P is the predetermined differential pressure P. ("PX=)" (exhaust time t=t2 in FIG. 2), by causing the control circuit 10 to output the instruction signal, leakage from outside air into the sealed space is prevented. Even if this occurs, the wafer can be vacuum-adsorbed with the minimum necessary suction force and with the minimum necessary evacuation time. The relationship between the bleed time t and the differential pressure P is measured in advance, and the exhaust time 1. Figure 2 - In the case shown by the dotted chain line,
The exhaust time t=ts) shown at point F is determined, and the exhaust time t-ta is set as a predetermined exhaust time']. By setting the binding, the timer 12 measures the evacuation time t from the start of vacuum suction of the wafer to the predetermined evacuation time. (=t
2) Even if the differential pressure P indicated by the output signal of the pressure sensor 5 is greater than the predetermined differential pressure value). (=Px+)
If it does not become larger than , the control circuit 10 can be made to output an instruction signal to stop vacuum suction to the sea urchin or a signal to notify of an abnormality. Therefore, the control circuit 10 and the determining means 10□ are
By operating according to the flowchart shown in the figure, the yield is improved and the productivity is significantly improved. That is, when the vacuum layering of the wafer is started, the control circuit 10 sets the timer 1 to the force f5.
1; (step 71), and the determination stage 10. Here, the exhaust time 1 indicated by the output fiM of the timer 12 is the predetermined exhaust time T. In step 72), it is determined whether the previous a-JJi time i is greater than the predetermined exhaust time I'. If it is larger than , for example, a signal indicating an abnormality is output to the control circuit 10 (
Step 73). Horn, i? The evacuation time t is the predetermined evacuation time '1'. When it is smaller than (j, pressure cassette:), the fifth output of the world, the number Ko is shown.''<Differential pressure P is a predetermined differential pressure I]. Step 7
4), the differential pressure F) is the predetermined differential pressure (■). If it is smaller than , return to step 7]. Further, the differential pressure P is the predetermined differential pressure P. When you are more polite than (
”, the instruction signal is output from the control circuit ]0 (step 75). In addition, when releasing the vacuum suction of the wafer, please press valve 7.
℃ is closed, and outside air is sent into the pipe 4. A wafer holding device for an X-ray exposure apparatus according to this embodiment. A pressure sensor 5 is installed at the bottom of the holding table 1 (a suction tube 8 is installed).
By introducing the gas in the suction pipe 8 from a position close to the bottom of the wafer holding table, the pressure can be reduced even if cooling water piping is installed in the holding table 1 to cool the wafer during exposure. A place for installing the sensor 5 is secured. FIGS. 4A) and 4B are views showing a second embodiment of the wafer holding device for an X-ray exposure apparatus according to the present invention. The wafer holding device for an X-ray exposure apparatus of this embodiment is shown in FIG.
As shown in FIG. 4(A), a pressure sensor 35 provided in the holding table 31 is placed in the outer concentric groove 39□ provided on the suction surface 32 of the holding table 31, diagonally to the left in FIG. 4(A). The pressure in the closed space introduced via the second introduction pipe 45 from the introduction [ ] 46 provided at F, and the pressure of outside air introduced via the second introduction pipe 41 (outside pressure) It differs from the one shown in FIG. 1 in that it does not have a timer for detecting the differential pressure between the pump and the pump and measures the evacuation time, and that the control circuit 40 does not have the determination means 10 shown in FIG. . Therefore, in the wafer holding device for an X-ray exposure apparatus of this embodiment, since the pressure sensor 35 detects the differential pressure using the pressure in the sealed space, can be detected more accurately than that shown in FIG. Further, when the control circuit 40 confirms that the pressure in the sealed space indicated by the output signal of the pressure sensor j-35 has become smaller than a predetermined pressure, it sends an instruction signal to proceed to the next step [1]. It only has the function of outputting. Furthermore, in the wafer holding device for an X-ray exposure apparatus of this embodiment, a pressure sensor 35 is installed at the bottom of the holding table 31.
t. Each time the gas in the sealed space is introduced through the second introduction pipe 45, even if a cooling water pipe is provided in the holding table 31 to cool the wafer during exposure.
A place for installing the pressure sensor 35 is ensured. In this embodiment as well, the exhaust time is measured. Set the number -) 4 ■: Everyone j, 2, control the same 14 (monthly 1st figure 1: l i1ζ4-judgment: 1-stage 10, set (j Rugodo, place) j- From the opening of the mountain, the output of the juice cassette → f 3 E) 6: It is directly small, the child pressure is not higher than the predetermined differential pressure.2) That is,
When confirming that the pressure in the sealed space is less than 1 ㎡, the control circuit 40:
Proceed to the next step-J°
RJ for line exposure equipment), 1. ζ (, ζ - is also acceptable) to output the exposure position of FC (FC) when the sleeve retaining device is turned on. , and E (case two;) and the pressure sensor 35 shown in FIG.
The difference between 11 and 12 is 11 - something that detects force'a-2), but
It may be a device that directly detects the sweat inside the suction 2/3 or the closed space. In particular, there is no need to detect the pressure (when the energy E is controlled to be a - constant value (0)). 1.15.
In this place 6; 7i, the above? Tsunoni) Nikasen 4, 11.
.. 5.35ζ Since there is no need to introduce outside air, it is necessary to introduce 11 and the first introduction shield, 14],, i, J) lX
If you want to directly detect the 1L force in the sealed space, either the inside of the suction tube 8 or the inside of the suction tube (in case of directly detecting the 1L force in the sealed space, it consists of a rotary cell). 8 or (=, Moekita/It may be installed at a convenient place in a closed space.) A plurality of circular ↑"-shaped protrusions are provided on the opposite side of the back side of the vacuum suction roller of the stand.
It may be possible that it is based on the fya soku power formula. Effects of the Invention] The present invention has the following advantages. As mentioned above, the configuration is X\fr.
Next, the pressure inside the closed space or the suction pipe is detected by a pressure sensor, and when the detected Fl force is smaller than a predetermined value, the control circuit performs the following By outputting the ``-1'' signal to advance the woofer to the culm, it is possible to adsorb the woofer with the optimum adsorption force, minimizing the distortion caused by the 44H and -F on the culm. Since C1' and C1' can be vacuum-adsorbed with the minimum suction time, there is an effect that the yield during ultra-fine processing and the direction of aJi can be adjusted.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(J*発明のX線露光装置用ウ−rハ4.V特装
[行の第1の実施例を示づ図τあり、(Al は保持台
の、11而図、([3)は該装置の概略構成図、第′、
2図(,1iJト気時間と差圧力との関係な示″6グフ
ソ、第3図は$制御回路および判定■−段の動作を説明
獲る)tコーチャ〜ト、第4図(1本発明の)(線露光
装置用つJ−ハ保持装置の第2の実施例を示す図であり
、(A)は保持台の土面メj、FB)は該装置の概略構
成図、第5図は真空吸着式つ、ス、ハ保持装置の 例を
示すであり、(A)は保持台の」面図、(B) i;;
、該装置の概略構成図て”゛ある。 1、:31・・・保持台、  2.32・・・吸看面、
3.33・・・吸引[−1、4,:34・・・配管、5
、3Fi・・・j王力廿ンザ、 6.36・・・排気ポンプ、 7.37・・・バルブ、 8,38・・・吸引管、9+
 92.39+、39z・・・溝、10.40・・・制
御回路、10□・・・判定り段、11 ・・・ 41 ・・・ 645 ・・・ B P、l)x 導入管、     12・・・タイマ、第1の導入管、 第2の導入管、  46・・・導入口、(〕 、  D
 、  F′ 、  F ・ ・ ・  ウ1、F′X
2  P X3.  P v+、 P Y2九丁王 力
、 ■)、、・・・IJi定の差圧力、 1、、.12.13・・・排気時間 ゛]′。・・・i”j′i定の排気時間。 1゜
FIG. 1 (There is a diagram τ showing the first embodiment of the X-ray exposure apparatus wafer 4. 3) is a schematic diagram of the device;
Figure 2 shows the relationship between time and differential pressure, Figure 3 explains the operation of the control circuit and the judgment stages, Figure 4 shows the relationship between time and differential pressure. (A) is a diagram showing a second embodiment of the J-H holding device for a line exposure device, (A) is the soil surface of the holding stand, FB) is a schematic configuration diagram of the device, and FIG. shows an example of a vacuum suction type holding device; (A) is a top view of the holding table; (B) is a top view of the holding table;
, there is a schematic configuration diagram of the device. 1.:31... Holding stand, 2.32... Suction surface,
3.33... Suction [-1, 4, :34... Piping, 5
, 3Fi...j 王力廿anza, 6.36...Exhaust pump, 7.37...Valve, 8,38...Suction pipe, 9+
92.39+, 39z... Groove, 10.40... Control circuit, 10□... Judgment stage, 11... 41... 645... B P, l) x Introduction pipe, 12 ... timer, first introduction pipe, second introduction pipe, 46... introduction port, (], D
, F′ , F ・ ・ ・ U1, F′X
2 P X3. P v+, P Y2 Nine Forces, ■),... IJi constant differential pressure, 1,... 12.13...Exhaust time ゛]'.・・・i”j′i constant exhaust time. 1°

Claims (1)

【特許請求の範囲】 1、保持台内に設けられた、密閉空間内または吸引管内
の圧力を検出する圧力センサと、 該圧力センサの出力信号が供給され、該出力信号が示す
前記密閉空間内または前記吸引管内の圧力が、所定の値
よりも小さくなったことを確認すると、次の工程へ進ま
せる指示信号を出力する制御回路とを有するX線露光装
置用ウェハ保持装置。 2、保持台内に設けられた、外気が導入される導入管を
有し、 圧力センサが、密閉空間内または吸引管内の圧力と外気
圧との差圧力を検出することを特徴とする請求項第1項
記載のX線露光装置用ウェハ保持装置。 3、排気時間を計測するタイマを有し、 制御回路が、圧力センサの出力信号が示す密閉空間内ま
たは吸引管内の圧力が所定の値よりも小さくなったとき
の前記タイマが示す排気時間が、所定の排気時間よりも
大きいか否かを判定する判定手段を有することを特徴と
する請求項第1項または第2項記載のX線露光装置用ウ
ェハ保持装置。
[Scope of Claims] 1. A pressure sensor provided in a holding table to detect the pressure in a closed space or a suction pipe, and an output signal of the pressure sensor is supplied, and a pressure sensor in the closed space indicated by the output signal is provided. Alternatively, a wafer holding device for an X-ray exposure apparatus, comprising a control circuit that outputs an instruction signal to proceed to the next process when it is confirmed that the pressure in the suction tube has become smaller than a predetermined value. 2. A claim characterized in that the holding table has an introduction pipe for introducing outside air, and the pressure sensor detects a pressure difference between the pressure inside the closed space or the suction pipe and the outside air pressure. The wafer holding device for an X-ray exposure apparatus according to item 1. 3. It has a timer that measures the evacuation time, and the control circuit determines the evacuation time indicated by the timer when the pressure in the closed space or in the suction pipe indicated by the output signal of the pressure sensor becomes smaller than a predetermined value. 3. The wafer holding device for an X-ray exposure apparatus according to claim 1, further comprising determining means for determining whether the evacuation time is longer than a predetermined evacuation time.
JP16993890A 1990-06-29 1990-06-29 Wafer holding device Expired - Fee Related JP2880262B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP16993890A JP2880262B2 (en) 1990-06-29 1990-06-29 Wafer holding device
EP91305730A EP0463853B1 (en) 1990-06-29 1991-06-25 Vacuum chuck
DE69130434T DE69130434T2 (en) 1990-06-29 1991-06-25 Plate for working under vacuum
US07/723,336 US5191218A (en) 1990-06-29 1991-06-28 Vacuum chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16993890A JP2880262B2 (en) 1990-06-29 1990-06-29 Wafer holding device

Publications (2)

Publication Number Publication Date
JPH0461220A true JPH0461220A (en) 1992-02-27
JP2880262B2 JP2880262B2 (en) 1999-04-05

Family

ID=15895694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16993890A Expired - Fee Related JP2880262B2 (en) 1990-06-29 1990-06-29 Wafer holding device

Country Status (1)

Country Link
JP (1) JP2880262B2 (en)

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JPH06244269A (en) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor
US5471279A (en) * 1992-02-10 1995-11-28 Canon Kabushiki Kaisha Apparatus and method for supporting a substrate
JP2004247731A (en) * 2003-02-12 2004-09-02 Asml Netherlands Bv Lithography apparatus and method of detecting accurate fixing of object
JP2005117007A (en) * 2003-09-19 2005-04-28 Dainippon Screen Mfg Co Ltd Substrate treatment unit, detecting method of substrate mounting state, and substrate treatment apparatus
JP2009509335A (en) * 2005-09-20 2009-03-05 アプライド マテリアルズ インコーポレイテッド Substrate placement determination using substrate backside pressure measurement
JP2011059489A (en) * 2009-09-11 2011-03-24 Nikon Corp Substrate treatment method and substrate treatment apparatus
JP2017216373A (en) * 2016-06-01 2017-12-07 キヤノン株式会社 Holding device, transport device, lithographic apparatus, and article manufacturing method
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JPWO2023119601A1 (en) * 2021-12-23 2023-06-29
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5471279A (en) * 1992-02-10 1995-11-28 Canon Kabushiki Kaisha Apparatus and method for supporting a substrate
JPH06244269A (en) * 1992-09-07 1994-09-02 Mitsubishi Electric Corp Semiconductor manufacturing apparatus, wafer vacuum chuck device thereof, and gas cleaning and nitride film formation therefor
JP2004247731A (en) * 2003-02-12 2004-09-02 Asml Netherlands Bv Lithography apparatus and method of detecting accurate fixing of object
US7110090B2 (en) 2003-02-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and method to detect correct clamping of an object
JP2005117007A (en) * 2003-09-19 2005-04-28 Dainippon Screen Mfg Co Ltd Substrate treatment unit, detecting method of substrate mounting state, and substrate treatment apparatus
JP2009509335A (en) * 2005-09-20 2009-03-05 アプライド マテリアルズ インコーポレイテッド Substrate placement determination using substrate backside pressure measurement
JP2011059489A (en) * 2009-09-11 2011-03-24 Nikon Corp Substrate treatment method and substrate treatment apparatus
JP2017216373A (en) * 2016-06-01 2017-12-07 キヤノン株式会社 Holding device, transport device, lithographic apparatus, and article manufacturing method
JP2020077787A (en) * 2018-11-08 2020-05-21 株式会社ディスコ Processing equipment
JPWO2023119601A1 (en) * 2021-12-23 2023-06-29
CN119361514A (en) * 2024-10-25 2025-01-24 江苏京创先进电子科技有限公司 Vacuum adsorption system, dicing saw and control method of vacuum adsorption system

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