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JPH0437914A - Quick charge element - Google Patents

Quick charge element

Info

Publication number
JPH0437914A
JPH0437914A JP14512490A JP14512490A JPH0437914A JP H0437914 A JPH0437914 A JP H0437914A JP 14512490 A JP14512490 A JP 14512490A JP 14512490 A JP14512490 A JP 14512490A JP H0437914 A JPH0437914 A JP H0437914A
Authority
JP
Japan
Prior art keywords
output
voltage
transistor
capacitor
reference voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14512490A
Other languages
Japanese (ja)
Inventor
Fumihiro Watanabe
文博 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14512490A priority Critical patent/JPH0437914A/en
Publication of JPH0437914A publication Critical patent/JPH0437914A/en
Pending legal-status Critical Current

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  • Control Of Electrical Variables (AREA)
  • Dc-Dc Converters (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は基準電圧などを発生する発生回路に関し、特
に安定化のための容量が基準電圧出力に接続されていて
も電源投入時などに基準電圧出力の急速な立上りおよび
その安定化が図れる急速充電素子を提供するものである
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a generation circuit that generates a reference voltage, etc., and in particular, even if a stabilizing capacitor is connected to the reference voltage output, the reference voltage is generated when the power is turned on, etc. The object of the present invention is to provide a quick charging element that can rapidly rise and stabilize voltage output.

〔従来の技術〕[Conventional technology]

従来、第3図に示すように基準電圧発生回路にはオペア
ンプにて構成されることが多い。また基準電圧端子には
、安定化のために大きな容量を接続することが多く、電
源投入時には容量Cを充電する聞出力が規定の電圧レベ
ルに達するのに時間を要する。このため図に示すように
トランジスタQ1のようK、出力電圧が低い間だけ容量
Cに充電するような充電素子を設けてその対策を取った
りしていた。
Conventionally, as shown in FIG. 3, a reference voltage generation circuit is often constructed with an operational amplifier. Further, a large capacitor is often connected to the reference voltage terminal for stabilization, and when the power is turned on, it takes time for the output to reach a specified voltage level while charging the capacitor C. For this reason, as shown in the figure, a countermeasure has been taken by providing a charging element such as a transistor Q1 that charges the capacitor C only while the output voltage is low.

[発明が解決しようとする課題] 従来の基準電圧発生回路は以上のように構成されていた
ので、出力の立ち上げを早めるために余分な充電素子を
必要とし、安定化のための容量が大きい場合、大きな素
子サイズを必要とするため、集積回路にしたとき、占有
面積が大きくなってしまうという問題点があった。
[Problems to be Solved by the Invention] Conventional reference voltage generation circuits were configured as described above, so they required an extra charging element to speed up the output start-up, and required a large capacity for stabilization. In this case, since a large element size is required, there is a problem in that when integrated circuits are formed, the occupied area becomes large.

この発明は上記のような問題点を解消するためになされ
たもので、余分な充電素子を必要とせず、従って面積の
小さい半導体集積回路を得ることを目的とする。
The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor integrated circuit that does not require an extra charging element and therefore has a small area.

〔課題を解決するための手段〕[Means to solve the problem]

本発明に係る急速充電素子は、位相補償用の容量と急速
充電用の素子とを共通にし、電源投入時など出力の電位
が規定のレベルに達していないときには急速充電用のト
ランジスタとして動作し、出力の電位が規定のレベルに
達したときには位相補償用の容量として、半導体のp−
wの接合が動作するようにしたものである。
The quick charging element according to the present invention uses a phase compensation capacitor and a quick charging element in common, and operates as a quick charging transistor when the output potential does not reach a specified level such as when the power is turned on. When the output potential reaches a specified level, the semiconductor p-
The w junction is made to work.

〔作用〕[Effect]

本発明における急速充電素子は、素子を構成するP−H
の領域の電位関係により、トランジスタまたは、容量と
して動作する。
The quick charging element in the present invention has a P-H that constitutes the element.
Depending on the potential relationship of the region, it operates as a transistor or a capacitor.

[実施例] 以下、この発明の一実施例を図について説明する。[Example] An embodiment of the present invention will be described below with reference to the drawings.

第1図はこの発明の一実施例である基準電圧発生回路の
回路図である。図において、トランジスタQ1が急速充
電と位相補償を行なうための素子である。第2図は第1
図の電源投入時など出力の電位が立ち上る状態を示した
曲線図で、Qlがトランジスタとして動作できる、すな
わちQlのベース、エミッタ間の電位が確保できる程度
の低い出力電圧レベルの間は、出力の定電法王とトラン
ジスタQ1により容量Cを充電し、出力が急速に立ち上
も出力の電圧が、とれKより立ち上レトランジスタQ1
のベース、エミッタ間電圧が確保できないようになると
、トランジスタQ1による充電はできなくなるが、出力
の定電法王にて規定の電圧レベルにまで達する。このと
きトランジスタQ1のベース、エミッタの電位は、エミ
ッタ側の電位がベース側の電位よ抄高くなるように設定
されているので、半導体で使用されるp−tq接合を利
用した・接合容量となる。すなわち、基準電圧発生のた
めに構成したオペアンプの位相補償容量として動作する
FIG. 1 is a circuit diagram of a reference voltage generating circuit which is an embodiment of the present invention. In the figure, a transistor Q1 is an element for performing rapid charging and phase compensation. Figure 2 is the first
This is a curve diagram showing the state in which the output potential rises, such as when the power is turned on. During the output voltage level that is low enough to allow Ql to operate as a transistor, that is, to ensure the potential between the base and emitter of Ql, the output voltage is Capacitor C is charged by constant current voltage and transistor Q1, and even though the output rises rapidly, the output voltage rises more than K and then transistor Q1
If the voltage between the base and emitter of the transistor Q1 cannot be secured, charging by the transistor Q1 becomes impossible, but the constant voltage of the output reaches a specified voltage level. At this time, the potentials of the base and emitter of the transistor Q1 are set so that the potential on the emitter side is slightly higher than the potential on the base side, so it becomes a junction capacitance using a p-tq junction used in semiconductors. . That is, it operates as a phase compensation capacitor for an operational amplifier configured to generate a reference voltage.

第2図では一例として、電源電圧5vで2Vの基準電圧
を出力する場合の電源投入時の出力の状態を示した曲線
図である。出力が0.7〜IV程度まではQlがトラン
ジスタとして動作し急速に出力は立ち上る。もし、急速
充電素子がない場合は図示点線のように出力の定電流の
みで充電され立ち上りが遅いことが判る。
FIG. 2 is a curve diagram showing, as an example, an output state when the power is turned on when a reference voltage of 2V is output with a power supply voltage of 5V. Ql operates as a transistor until the output reaches about 0.7 to IV, and the output rises rapidly. It can be seen that if there is no quick charging element, the battery will be charged only with the constant output current as shown by the dotted line in the figure, and the rise will be slow.

半導体集積回路ではP−N接合の容量は100μm×1
00μmの面積で5pF”程度であり、位相補償のため
の容量として例えば10pF必要であれば、20000
μo12の面積を必要とする。また、第3図の従来のも
ののように急速充電用にトランジスタ91を設けた場合
、相当大きなサイズのトランジスタを必要とし、位相補
償容量をトランジスタとしても利用できるようにするこ
とは、面積を小さく構成できるため半導体集積回路に適
する。
In a semiconductor integrated circuit, the capacitance of a P-N junction is 100 μm x 1
For example, if 10 pF is required as a capacitance for phase compensation, it is about 20,000 pF in an area of 00 μm.
It requires an area of μo12. Furthermore, if the transistor 91 is provided for quick charging as in the conventional one shown in FIG. This makes it suitable for semiconductor integrated circuits.

なお、上記実施例は一実施例であ抄、同一の考え方で素
子を接続するのであれば、アンプの構成にはよらない。
It should be noted that the above embodiment is just one embodiment, and as long as the elements are connected according to the same concept, it does not depend on the configuration of the amplifier.

〔発明の効果〕〔Effect of the invention〕

以上のようにこの発明によれば、ベース、エミッタ領域
の電位関係により、トランジスタあるいはp−s接合容
量として共用できるようにしたので、余分な素子、面積
を必要とすることなく、半導体集積回路に適した急速充
電素子を得ることができる。
As described above, according to the present invention, the potential relationship between the base and emitter regions allows them to be used commonly as a transistor or a p-s junction capacitor. A suitable quick charging element can be obtained.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例である基準電圧発生回路の
回路図、第2図は第1図の動作状態を示す曲線図、第3
図は従来の基準電圧発生回路の回路図である。 図において、Qlは位相補償および急速充電用素子、■
は出力の定電流、Cは出力安定化のための容量である。 なお、図中、同一符号は同一、又は相当部分を示す。
FIG. 1 is a circuit diagram of a reference voltage generation circuit which is an embodiment of the present invention, FIG. 2 is a curve diagram showing the operating state of FIG. 1, and FIG.
The figure is a circuit diagram of a conventional reference voltage generation circuit. In the figure, Ql is a phase compensation and quick charging element,
is the output constant current, and C is the capacitance for stabilizing the output. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】[Claims]  電圧出力を行なう半導体装置の電圧出力端子に容量を
接続し、出力電圧の安定化を行なうように構成され、電
圧出力部の半導体回路の位相補償を行ない、また出力電
圧が規定の電圧に達しない間は、上記出力安定化のため
の容量を充電できるように動作できるように接続したこ
とを特徴とする急速充電素子。
A capacitor is connected to the voltage output terminal of a semiconductor device that outputs voltage, and it is configured to stabilize the output voltage. It also performs phase compensation for the semiconductor circuit in the voltage output section, and also prevents the output voltage from reaching a specified voltage. A quick charging element, characterized in that the capacitance for stabilizing the output is operably connected to charge the capacitor for stabilizing the output.
JP14512490A 1990-06-01 1990-06-01 Quick charge element Pending JPH0437914A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14512490A JPH0437914A (en) 1990-06-01 1990-06-01 Quick charge element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14512490A JPH0437914A (en) 1990-06-01 1990-06-01 Quick charge element

Publications (1)

Publication Number Publication Date
JPH0437914A true JPH0437914A (en) 1992-02-07

Family

ID=15377958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14512490A Pending JPH0437914A (en) 1990-06-01 1990-06-01 Quick charge element

Country Status (1)

Country Link
JP (1) JPH0437914A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531855B2 (en) 2000-06-30 2003-03-11 Denso Corporation DC power supply with output voltage detection and control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531855B2 (en) 2000-06-30 2003-03-11 Denso Corporation DC power supply with output voltage detection and control

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