JPH04196489A - Thin-film semiconductor device - Google Patents
Thin-film semiconductor deviceInfo
- Publication number
- JPH04196489A JPH04196489A JP32809190A JP32809190A JPH04196489A JP H04196489 A JPH04196489 A JP H04196489A JP 32809190 A JP32809190 A JP 32809190A JP 32809190 A JP32809190 A JP 32809190A JP H04196489 A JPH04196489 A JP H04196489A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor device
- diamond
- thin
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000010409 thin film Substances 0.000 title claims description 9
- 239000010408 film Substances 0.000 claims description 23
- 230000005669 field effect Effects 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 5
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は薄膜半導体装置に関し、電界効果型トランジス
タの半導体膜基板の新しい材料構成に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a thin film semiconductor device, and more particularly to a new material configuration of a semiconductor film substrate of a field effect transistor.
［従来の技術］
従来、薄膜半導体装置は絶縁基板表面に形成されたシリ
コン瞑、炭化硅累膜、ガリュウム砒素等から成る化合物
半導体膜等の半導体膜に電界効果型トランジスタ等の半
導体装置が形成されて成るのが通例であった。[Prior Art] Conventionally, in thin film semiconductor devices, semiconductor devices such as field effect transistors are formed on a semiconductor film such as a compound semiconductor film made of silicon film, silicon carbide composite film, gallium arsenide, etc., formed on the surface of an insulating substrate. It was customary to consist of
［発明が解決しようとする課題］
しかし、上記従来技術によると、未だダイアモンド膜や
ダイアモンド様炭素膜等ん半導体膜として薄膜半導体装
置、とりわけ電界効果型トランジスタが形成された経過
は無く、為に耐熱性が良好で且つ耐摩耗性の良好な薄膜
半導体装置、とりわけ電界効果型トランジスタが無かっ
たと言う課題があった。[Problems to be Solved by the Invention] However, according to the above-mentioned prior art, thin film semiconductor devices, especially field effect transistors, have not yet been formed as semiconductor films such as diamond films or diamond-like carbon films, There was a problem in that there were no thin film semiconductor devices, especially field effect transistors, that had good properties and wear resistance.
本発明はかかる従来技術の課題を解決し耐熱性及び耐摩
耗性の良好な薄膜半導体装置を提供することを目的とす
る。An object of the present invention is to solve the problems of the prior art and provide a thin film semiconductor device with good heat resistance and wear resistance.
［課題を解決する為の手段］
上記従来技術の課題を解決し、上記目的を達成するため
に、本発明は薄膜半導体装置に関し、ダイアモンド膜又
はダイアモンド様炭素膜を半導体膜たした電界効果トラ
ンジスタを形成する手段を取る。[Means for Solving the Problems] In order to solve the problems of the prior art described above and achieve the above objects, the present invention relates to a thin film semiconductor device, and provides a field effect transistor in which a diamond film or a diamond-like carbon film is used as a semiconductor film. Take steps to form.
［実施例コ 以下、実施例により本発明を詳述する。[Example code] Hereinafter, the present invention will be explained in detail with reference to Examples.
いま、石英（ＳｉＣ２）、サファイア、及び炭化硅素等
の絶縁基板上にＣＶＤ法、ＭＯＣＶＤ法あるいはスバ°
ツタ蒸着法等により形成する０、 １ミクロン厚さ程
度のダイアモンド膜又はダイアモンド様炭素膜を半導体
膜として、該半導体膜に電界効果トランジスタを形成す
、る。尚、前記半導体膜はダイアモンド膜とダイアモン
ド様炭素膜の多層構造であっても良く、又、前記電界効
果トランジスタのゲートｔ ＋ｉは半導体膜の上下いず
れかの−主面に形成される事と成る。更に前記電界効ｒ
Ｊ３：ｌ−ランジスタの電極類はダイアモンド様炭素膜
やタングステンあるいは炭化硅素や炭化タングステンあ
るいは硅化タングステン等の耐熱性及び耐摩耗性の優れ
た導電材料や合金材料である事が望ましい。Nowadays, CVD, MOCVD, or substrates are applied to insulating substrates such as quartz (SiC2), sapphire, and silicon carbide.
A diamond film or a diamond-like carbon film with a thickness of about 0.1 micron formed by the ivy vapor deposition method or the like is used as a semiconductor film, and a field effect transistor is formed in the semiconductor film. The semiconductor film may have a multilayer structure of a diamond film and a diamond-like carbon film, and the gate t+i of the field effect transistor is formed on either the upper or lower main surface of the semiconductor film. . Furthermore, the electric field effect r
J3: The electrodes of the l-transistor are preferably made of a conductive material or alloy material with excellent heat resistance and wear resistance, such as a diamond-like carbon film, tungsten, silicon carbide, tungsten carbide, or tungsten silicide.
［発明の効果１
本発明により、ｒｉｔ熱性及び耐摩耗性のすぐれた薄膜
半導体装置を提供する事が出来る効果が有る。[Advantageous Effects of the Invention 1] The present invention has the effect of being able to provide a thin film semiconductor device with excellent RIT heat resistance and wear resistance.
１す上 出廓人 セイコーエプソン株式会社 代度人弁理士 鈴木喜三部（他１名）1st above Outsourcer: Seiko Epson Corporation Representative Patent Attorney Kizobe Suzuki (and 1 other person)
Claims (1)
炭素膜を半導体膜基板とした電界効果型トランジスタが
形成されて成る事を特徴とする薄膜半導体装置。A thin film semiconductor device characterized in that a field effect transistor is formed on the surface of an insulating substrate using a diamond film or a diamond-like carbon film as a semiconductor film substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32809190A JPH04196489A (en) | 1990-11-28 | 1990-11-28 | Thin-film semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32809190A JPH04196489A (en) | 1990-11-28 | 1990-11-28 | Thin-film semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04196489A true JPH04196489A (en) | 1992-07-16 |
Family
ID=18206410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32809190A Pending JPH04196489A (en) | 1990-11-28 | 1990-11-28 | Thin-film semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04196489A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384470A (en) * | 1992-11-02 | 1995-01-24 | Kobe Steel, Usa, Inc. | High temperature rectifying contact including polycrystalline diamond and method for making same |
| US5455432A (en) * | 1994-10-11 | 1995-10-03 | Kobe Steel Usa | Diamond semiconductor device with carbide interlayer |
| US7508033B2 (en) * | 1998-04-24 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with diamond-like carbon film on backside of substrate |
| EP2073264A4 (en) * | 2006-10-02 | 2010-05-05 | Toshiba Kk | Semiconductor device |
-
1990
- 1990-11-28 JP JP32809190A patent/JPH04196489A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384470A (en) * | 1992-11-02 | 1995-01-24 | Kobe Steel, Usa, Inc. | High temperature rectifying contact including polycrystalline diamond and method for making same |
| US5455432A (en) * | 1994-10-11 | 1995-10-03 | Kobe Steel Usa | Diamond semiconductor device with carbide interlayer |
| US7508033B2 (en) * | 1998-04-24 | 2009-03-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with diamond-like carbon film on backside of substrate |
| EP2073264A4 (en) * | 2006-10-02 | 2010-05-05 | Toshiba Kk | Semiconductor device |
| US8357942B2 (en) | 2006-10-02 | 2013-01-22 | Kabushiki Kaisha Toshiba | Semiconductor device with a peripheral circuit formed therein |
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