JPH04127545A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPH04127545A JPH04127545A JP2249184A JP24918490A JPH04127545A JP H04127545 A JPH04127545 A JP H04127545A JP 2249184 A JP2249184 A JP 2249184A JP 24918490 A JP24918490 A JP 24918490A JP H04127545 A JPH04127545 A JP H04127545A
- Authority
- JP
- Japan
- Prior art keywords
- pads
- integrated circuit
- circuit device
- positions
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
- 239000000872 buffer Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路装置に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor integrated circuit device.
従来の半導体集積回路装置は、内蔵する半導体チップを
インナーリードに接続する構造を取る場合、リード線の
構造上の制約から半導体チップ上のパッドの位置と半導
体集積回路装置のリードとの位置の対応が決っていた。In conventional semiconductor integrated circuit devices, when a built-in semiconductor chip is connected to an inner lead, due to structural constraints on the lead wires, it is difficult to correspond between the positions of pads on the semiconductor chip and the leads of the semiconductor integrated circuit device. was decided.
この従来の半導体集積回路装置では、半導体チップ上の
パッドの位置に対する半導体集積回路装置のリードの位
置の対応が決っているため、半導体チップ上で最適のレ
イアウトを行うと、半導体集積回路装置の入出力信号の
リードの位置がおのずと決定され、このことが逆にこの
半導体集積回路装置を用いるプリント基板での信号線の
配線を困難にすることがあるという問題点があった。ま
た、半導体集積回路装置のリード線側で入出力信号のビ
ンの位置を決定すると、半導体チップ上でのパッドの位
置がおのずと決定されてしまい、半導体チップ上で最適
なレイアウトを行うことができず、例えば出力バッファ
の同時動作等による誤動作の原因となるという問題点も
あった。In this conventional semiconductor integrated circuit device, the correspondence between the lead positions of the semiconductor integrated circuit device and the pad positions on the semiconductor chip is determined, so if the optimal layout is performed on the semiconductor chip, the input of the semiconductor integrated circuit device There is a problem in that the position of the output signal lead is determined automatically, which may make it difficult to wire signal lines on a printed circuit board using this semiconductor integrated circuit device. Furthermore, if the positions of the input/output signal bins are determined on the lead wire side of the semiconductor integrated circuit device, the positions of the pads on the semiconductor chip are automatically determined, making it impossible to achieve an optimal layout on the semiconductor chip. However, there is also the problem that, for example, simultaneous operation of output buffers may cause malfunctions.
本発明の半導体集積回路装置は、内蔵する半導体チップ
をインナーリードに接続する構造の半導体集積回路装置
において、接続経路を変換する機能を持つ接続経路変換
板を介して前記半導体チップを前記インナーリードに接
続する構成である。The semiconductor integrated circuit device of the present invention has a structure in which a built-in semiconductor chip is connected to an inner lead. This is the configuration to connect.
本発明の半導体集積回路装置は、前記半導体チップと前
記接続経路変換板との間および前記接続経路変換板と前
記インナーリードとの間の接続の少くなくとも一部をボ
ンデングワイヤを用いて行ってもよい。In the semiconductor integrated circuit device of the present invention, at least part of the connections between the semiconductor chip and the connection path conversion board and between the connection path conversion board and the inner leads are made using bonding wires. You can.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図(a)は本発明の一実施例のボンデングワイヤの
接続を模式化した平面図、第1図(b)は同じく側面図
である。FIG. 1(a) is a plan view schematically showing the connection of bonding wires according to an embodiment of the present invention, and FIG. 1(b) is a side view of the same.
半導体チップ1は、両端に接続用パッドを持つ複数の信
号線2を配設した配線板3との間に絶縁膜4を挟んで半
導体集積回路装置5に収容されている。半導体チップ1
の入出力パッドと信号線2の一方のパッドとの間は、ボ
ンデングワイヤ6で接続している。信号線2の他方のパ
ッドは、半導体集積回路装置5に外部と接続するため設
けである。リードの一部であるインナーリード7との間
を、ボンデングワイヤ8で接続している。配線板3に配
設する信号線2の両端のパッドは、半導体チップ1の入
出力パッドとこれに対応するインナーリードとの位置に
合せてそれぞれ位置を定めることが可能である。又、配
線板3は、この対応する2個のパッド間を接続する信号
線2が他の信号線2との間で交叉しても電気的に接続し
ないよう、2層以上の配線経路を持つ構造とすることに
より、必要に応じ任意のパッド間を最短距離で接続する
ことができる。The semiconductor chip 1 is housed in a semiconductor integrated circuit device 5 with an insulating film 4 interposed between the wiring board 3 and a wiring board 3 on which a plurality of signal lines 2 having connection pads at both ends are arranged. semiconductor chip 1
The input/output pad and one pad of the signal line 2 are connected by a bonding wire 6. The other pad of the signal line 2 is provided to connect the semiconductor integrated circuit device 5 to the outside. A bonding wire 8 is connected to an inner lead 7 which is a part of the lead. The pads at both ends of the signal line 2 disposed on the wiring board 3 can be positioned in accordance with the positions of the input/output pads of the semiconductor chip 1 and the corresponding inner leads. Further, the wiring board 3 has a wiring path of two or more layers so that the signal line 2 connecting these two corresponding pads does not electrically connect even if it crosses with another signal line 2. With this structure, arbitrary pads can be connected over the shortest distance if necessary.
以上説明したように本発明は、半導体チップ上の任意の
パッドと任意のインナーリードとを接続することを可能
としたので、半導体チップ上でのレイアウトから半導体
集積回路装置のインターリードの位置が制約を受けるこ
とがなくなり、プリント基板上での信号線の配線も容易
に行えるようになるという効果がある。また、半導体チ
ップ上でのレイアウトが自由に行えるため、出力バッフ
ァを各地気パッドごとに分散させて配置することが可能
となり、出力バッファの同時動作業による影響を小さく
できるという効果もある。As explained above, the present invention makes it possible to connect any pad on a semiconductor chip to any inner lead, so the position of interleads in a semiconductor integrated circuit device is restricted by the layout on the semiconductor chip. This has the effect that signal lines can be wired easily on the printed circuit board. Furthermore, since the layout on the semiconductor chip can be freely performed, it is possible to arrange the output buffers in a distributed manner for each air pad, which has the effect of reducing the influence of simultaneous operation of the output buffers.
第1図(a)は本発明の一実施例のボンデングワイヤの
接続を模式化した平面図、第1図(b)は同じく側面図
である。
1・・・半導体チップ、2・・・信号線、3・・・配線
板、4・・・絶縁板、5・・・半導体集積回路装置、6
.8・・・ボンデングワイヤ、7・・・インナーリード
。FIG. 1(a) is a plan view schematically showing the connection of bonding wires according to an embodiment of the present invention, and FIG. 1(b) is a side view of the same. DESCRIPTION OF SYMBOLS 1... Semiconductor chip, 2... Signal line, 3... Wiring board, 4... Insulating board, 5... Semiconductor integrated circuit device, 6
.. 8... Bonding wire, 7... Inner lead.
Claims (1)
構造の半導体集積回路装置において、接続経路を変換す
る機能を持つ接続経路変換板を介して前記半導体チップ
を前記インナーリードに接続することを特徴とする半導
体集積回路装置。 2、前記半導体チップと前記接続経路変換板との間およ
び前記接続経路変換板と前記インナーリードとの間の接
続の少くなくとも一部をボンデングワイヤを用いて行う
ことを特徴とする請求項1記載の半導体集積回路装置。[Scope of Claims] 1. In a semiconductor integrated circuit device having a structure in which a built-in semiconductor chip is connected to an inner lead, the semiconductor chip is connected to the inner lead via a connection path conversion board having a function of converting connection paths. A semiconductor integrated circuit device characterized by: 2. At least a part of the connections between the semiconductor chip and the connection path conversion board and between the connection path conversion board and the inner leads are made using bonding wires. 1. The semiconductor integrated circuit device according to 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2249184A JP2911988B2 (en) | 1990-09-19 | 1990-09-19 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2249184A JP2911988B2 (en) | 1990-09-19 | 1990-09-19 | Semiconductor integrated circuit device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04127545A true JPH04127545A (en) | 1992-04-28 |
| JP2911988B2 JP2911988B2 (en) | 1999-06-28 |
Family
ID=17189153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2249184A Expired - Lifetime JP2911988B2 (en) | 1990-09-19 | 1990-09-19 | Semiconductor integrated circuit device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2911988B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003174111A (en) * | 2001-12-06 | 2003-06-20 | Sanyo Electric Co Ltd | Semiconductor device |
| US6812575B2 (en) | 2000-08-29 | 2004-11-02 | Nec Corporation | Semiconductor device |
| US8471349B2 (en) | 2010-01-29 | 2013-06-25 | Fujitsu Optical Components Limited | Photoreceiving device |
| CN105914194A (en) * | 2016-06-20 | 2016-08-31 | 东莞市联洲知识产权运营管理有限公司 | An optimized integrated circuit package |
| CN106098672A (en) * | 2016-06-20 | 2016-11-09 | 东莞市联洲知识产权运营管理有限公司 | A kind of integrated antenna package of improvement |
-
1990
- 1990-09-19 JP JP2249184A patent/JP2911988B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6812575B2 (en) | 2000-08-29 | 2004-11-02 | Nec Corporation | Semiconductor device |
| JP2003174111A (en) * | 2001-12-06 | 2003-06-20 | Sanyo Electric Co Ltd | Semiconductor device |
| US8471349B2 (en) | 2010-01-29 | 2013-06-25 | Fujitsu Optical Components Limited | Photoreceiving device |
| CN105914194A (en) * | 2016-06-20 | 2016-08-31 | 东莞市联洲知识产权运营管理有限公司 | An optimized integrated circuit package |
| CN106098672A (en) * | 2016-06-20 | 2016-11-09 | 东莞市联洲知识产权运营管理有限公司 | A kind of integrated antenna package of improvement |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2911988B2 (en) | 1999-06-28 |
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