JP7770849B2 - Polishing pad, polishing apparatus, and polishing method - Google Patents
Polishing pad, polishing apparatus, and polishing methodInfo
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Description
本発明は、研磨パッド、研磨装置、および研磨方法に関するものである。 The present invention relates to a polishing pad, a polishing apparatus, and a polishing method.
光学材料、半導体デバイス、ハードディスク、ガラス基板などの材料の表面には平坦性が求められるため、研磨パッドを用いた遊離砥粒方式の研磨が行われている。遊離砥粒方式とは、研磨パッドとワークの間に砥粒を含むスラリー（研磨液）を供給しながらワークの加工面を研磨加工する方法である。中でも半導体ウェーハ等の研磨では、ワークの無欠陥化、平坦化特性が高度に要求されるようになり、平坦性を確保するために研磨パッドを使用した遊離砥粒方式の研磨加工が行われ、その用いられる研磨パッドには、仕上げ研磨工程を中心に軟質研磨パッドを利用するケースが増えている。 Since flatness is required for the surfaces of materials such as optical materials, semiconductor devices, hard disks, and glass substrates, polishing using a polishing pad is performed using a loose abrasive method. The loose abrasive method is a method of polishing the workpiece surface by supplying a slurry (polishing liquid) containing abrasive grains between the polishing pad and the workpiece. In particular, when polishing semiconductor wafers and other materials, high levels of defect-free and flat workpiece characteristics are required, and loose abrasive polishing using a polishing pad is used to ensure flatness, with soft polishing pads being increasingly used, particularly in the finish polishing process.
研磨パッドを用いた半導体ウェーハ等の研磨では、使用される研磨ヘッド構造によって、研磨パッドの研磨面に適宜加工が行われることがある。例えば、水張り式の研磨ヘッドの場合、研磨面に溝がない研磨パッドを用いることが好ましいが、メンブレン方式の研磨ヘッドの場合、研磨面に溝を形成した研磨パッドを用いることが好ましい。水張り式の研磨ヘッドの場合、ワークの回収が困難であるものの、研磨面に溝がない研磨パッドの方が平坦化特性には優位に働く。一方、メンブレン方式の研磨ヘッドの場合、研磨パッドの溝模様に由来する表面平坦度の指標であるナノトポグラフィが悪化するものの、研磨面に溝を形成しなければワークの回収が困難である。 When polishing semiconductor wafers and other materials using a polishing pad, the polishing surface of the polishing pad may be appropriately processed depending on the polishing head structure used. For example, with a water-filled polishing head, it is preferable to use a polishing pad without grooves on the polishing surface, while with a membrane-type polishing head, it is preferable to use a polishing pad with grooves on the polishing surface. With a water-filled polishing head, it is difficult to recover the workpiece, but a polishing pad without grooves on the polishing surface has an advantage in terms of planarization characteristics. On the other hand, with a membrane-type polishing head, it is difficult to recover the workpiece unless grooves are formed on the polishing surface, although nanotopography, an index of surface flatness derived from the groove pattern on the polishing pad, deteriorates.
研磨パッドの研磨面における加工には、溝加工、エンボス加工及び穴加工（パンチング加工）等がある。ＣＭＰ技術では、生産性の効率化や歩留まり向上の観点から研磨レートを安定化させる必要がある（例えば、特許文献１参照）。さらに、ＣＭＰで用いられる研磨パッドには、生産性、及びコスト面から、１枚当たりのワーク処理枚数を増加させることが望まれている。１枚当たりのワーク処理枚数を増加させるためには、研磨パッドの摩耗を抑制したり、研磨パッドの目詰まりによる研磨レートの低下を抑制したりする必要がある。そして研磨パッドの摩耗及び研磨レートを向上させるために、研磨パッドの研磨面に研磨スラリーを流すための溝を形成することが知られている（例えば、特許文献２参照）。 Processing of the polishing surface of a polishing pad includes groove machining, embossing, and hole drilling (punching). In CMP technology, stabilizing the polishing rate is necessary to improve productivity and yield (see, for example, Patent Document 1). Furthermore, for productivity and cost reasons, it is desirable to increase the number of workpieces that can be processed per polishing pad for polishing pads used in CMP. To increase the number of workpieces that can be processed per pad, it is necessary to suppress polishing pad wear and prevent a decrease in polishing rate due to clogging of the polishing pad. It is known that grooves for flowing polishing slurry can be formed on the polishing surface of the polishing pad to improve polishing pad wear and polishing rate (see, for example, Patent Document 2).
上記のように、研磨面に溝を形成した研磨パッドでは、研磨時に供給スラリーが効果的に研磨面に寄与され難く、ワークとの間で接触と非接触の不均等が生じ、ワークの表面平坦度の指標であるナノトポグラフィが悪化してしまう。一方、研磨面に溝を形成しない研磨パッドでは、研磨パッドがワークに吸着し、メンブレン方式の研磨ヘッドの場合にはワークを回収することができなくなるという問題点がある。 As mentioned above, with polishing pads that have grooves on their polishing surface, the supplied slurry is less likely to be effectively applied to the polishing surface during polishing, resulting in uneven contact and non-contact with the workpiece, and a deterioration in nanotopography, an indicator of the workpiece's surface flatness. On the other hand, with polishing pads that do not have grooves on their polishing surface, the polishing pad adheres to the workpiece, which, in the case of a membrane-type polishing head, presents a problem: the workpiece cannot be recovered.
すなわち、研磨パッドの研磨面に溝を形成するか否かの選択は、どちらの選択肢においてもメリットとデメリットがあり、両方のメリットを享受することが難しいという課題があった。 In other words, the choice of whether or not to form grooves on the polishing surface of a polishing pad has both advantages and disadvantages, making it difficult to enjoy the benefits of both.
本発明の目的は、上述した課題を鑑み、研磨面に溝を形成することと形成しないことの両方のメリットを享受できる研磨パッド、研磨装置、および研磨方法を提供する。 In consideration of the above-mentioned problems, the object of the present invention is to provide a polishing pad, polishing apparatus, and polishing method that can enjoy the benefits of both forming and not forming grooves on the polishing surface.
上記の課題を解決するために、本発明の一態様の研磨パッドは、メンブレン式の研磨ヘッドを用いてワークを定盤に押圧して研磨するために前記定盤に貼付する研磨パッドであって、下地ナップ層と前記下地ナップ層よりも厚い突起ナップ層とを有し、前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であることを特徴とする。 In order to solve the above problems, one aspect of the polishing pad of the present invention is a polishing pad that is attached to a surface plate to polish a workpiece by pressing it against the surface plate using a membrane-type polishing head, and is characterized by having a base nap layer and a protruding nap layer that is thicker than the base nap layer, with the height difference between the base nap layer and the protruding nap layer being in the range of 250 μm to 280 μm.
上記のように下地ナップ層と前突起ナップ層との高低差が２５０μｍから２８０μｍの範囲である研磨パッドは、研磨時には研磨面に溝を形成していないかのように機能し、ワークを回収する際には研磨面に溝を形成しているように機能する。 As described above, a polishing pad with a height difference between the base nap layer and the front protrusion nap layer in the range of 250 μm to 280 μm functions as if no grooves were formed on the polishing surface during polishing, and functions as if grooves were formed on the polishing surface when the workpiece is removed.
具体的には、研磨ヘッドが前記ワークを押圧する圧力が１０ＭＰａ以上である場合、前記下地ナップ層と前記突起ナップ層との高低差が２０μｍから４０μｍの範囲になり、言い換えれば、研磨ヘッドが前記ワークを押圧する圧力が１０ＭＰａ以上である場合、前記下地ナップ層および前記突起ナップ層が前記ワークに接触する。 Specifically, when the pressure with which the polishing head presses the workpiece is 10 MPa or more, the difference in height between the base nap layer and the protruding nap layer is in the range of 20 μm to 40 μm. In other words, when the pressure with which the polishing head presses the workpiece is 10 MPa or more, the base nap layer and the protruding nap layer come into contact with the workpiece.
なお、前記下地ナップ層および前記突起ナップ層は、ポリウレタン樹脂で形成されていることが好ましい。また、前記突起ナップ層の厚さは３５０μｍ以上であることが好ましい。 It is preferable that the base nap layer and the protruding nap layer are formed from polyurethane resin. It is also preferable that the thickness of the protruding nap layer is 350 μm or more.
また、本発明の一態様の研磨装置は、ワークを定盤に押圧して研磨するためのメンブレン式の研磨ヘッドと、前記定盤に貼付する研磨パッドとを備え、前記研磨パッドは、下地ナップ層と前記下地ナップ層よりも厚い突起ナップ層とを有し、前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であることを特徴とする。 Furthermore, one aspect of the polishing apparatus of the present invention comprises a membrane-type polishing head for pressing a workpiece against a surface plate to polish it, and a polishing pad attached to the surface plate, the polishing pad having a base nap layer and a protruding nap layer that is thicker than the base nap layer, and the height difference between the base nap layer and the protruding nap layer is in the range of 250 μm to 280 μm.
同様に、本発明の一態様の研磨装置においても、研磨パッドが下地ナップ層と前突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であるので、研磨時には研磨面に溝を形成していないかのように機能し、ワークを回収する際には研磨面に溝を形成しているように機能する。 Similarly, in one embodiment of the polishing apparatus of the present invention, the polishing pad has a height difference between the base nap layer and the front protrusion nap layer in the range of 250 μm to 280 μm, so it functions as if no grooves were formed on the polishing surface during polishing, and functions as if grooves were formed on the polishing surface when the workpiece is retrieved.
前記研磨ヘッドは、中心部を押圧する中心部制御圧力と外周部を押圧する外周部制御圧力とを独立に制御可能であることが好ましい。研磨量を調整し、平坦度を高めるためである。 It is preferable that the polishing head be capable of independently controlling the central control pressure that presses the central portion and the peripheral control pressure that presses the peripheral portion. This is to adjust the amount of polishing and improve flatness.
また、前記研磨ヘッドは、前記ワークの外周を保持するためのリテーナリングを前記研磨ヘッドの外周に備えていることが好ましい。ワークを摺動させる際にワークが研磨ヘッドから外れないようにするためである。 It is also preferable that the polishing head is provided with a retainer ring on its outer periphery to hold the outer periphery of the workpiece. This is to prevent the workpiece from coming off the polishing head when sliding.
また、本発明の一態様の研磨方法は、下地ナップ層と前記下地ナップ層よりも厚い突起ナップ層とを有し、前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲である研磨パッドを定盤に貼付し、メンブレン式の研磨ヘッドを用いてワークを前記研磨パッドに押圧して研磨することを特徴とする。 Furthermore, one aspect of the polishing method of the present invention is characterized in that a polishing pad having a base nap layer and a protruding nap layer that is thicker than the base nap layer, with the difference in height between the base nap layer and the protruding nap layer being in the range of 250 μm to 280 μm, is attached to a surface plate, and a membrane-type polishing head is used to press a workpiece against the polishing pad to polish it.
同様に、本発明の一態様の研磨方法においても、研磨パッドが下地ナップ層と前突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であるので、研磨時には研磨面に溝を形成していないかのように機能し、ワークを回収する際には研磨面に溝を形成しているように機能する。 Similarly, in one aspect of the polishing method of the present invention, the polishing pad has a height difference between the base nap layer and the front protrusion nap layer in the range of 250 μm to 280 μm, so during polishing, it functions as if no grooves were formed on the polishing surface, and when the workpiece is recovered, it functions as if grooves were formed on the polishing surface.
具体的には、研磨時に前記下地ナップ層と前記突起ナップ層との高低差が２０μｍから４０μｍの範囲になるように、前記ワークを前記研磨パッドに押圧することを特徴とすることが好ましい。言い換えれば、研磨時に前記下地ナップ層および前記突起ナップ層が前記ワークに接触するように、前記ワークを前記研磨パッドに押圧することが好ましい。例えば、研磨時に前記研磨ヘッドが１０ＭＰａ以上の圧力で前記ワークを前記研磨パッドに押圧することでこの状態を実現することができる。 Specifically, it is preferable that the workpiece be pressed against the polishing pad so that the difference in height between the base nap layer and the protruding nap layer is in the range of 20 μm to 40 μm during polishing. In other words, it is preferable that the workpiece be pressed against the polishing pad so that the base nap layer and the protruding nap layer come into contact with the workpiece during polishing. For example, this condition can be achieved by having the polishing head press the workpiece against the polishing pad with a pressure of 10 MPa or more during polishing.
本発明の各視点によれば、研磨面に溝を形成することと形成しないことの両方のメリットを享受できる研磨パッド、研磨装置、および研磨方法を提供することができる。 Each aspect of the present invention provides a polishing pad, polishing apparatus, and polishing method that offer the benefits of both forming and not forming grooves on the polishing surface.
以下、図面を参照しながら、本発明の実施形態について説明する。ただし、以下に説明する実施形態により本発明が限定されるものではない。また、各図面において、同一または対応する要素には適宜同一の符号を付している。さらに、図面は模式的なものであり、各要素の寸法の関係、各要素の比率などは、現実のものとは異なる場合があることに留意する必要がある。図面の相互間においても、互いの寸法の関係や比率が異なる部分が含まれている場合がある。 Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the embodiments described below. In addition, identical or corresponding elements in each drawing are appropriately designated by the same reference numerals. Furthermore, it should be noted that the drawings are schematic, and the dimensional relationships and ratios of each element may differ from those in reality. There may also be parts in which the dimensional relationships and ratios differ between the drawings.
図１は、本発明の実施形態に係る研磨装置の概略図である。図１に示すように、研磨装置１００は、研磨パッド１０を貼付した定盤１１と、ワークを定盤１１に押圧して研磨するためのメンブレン式の研磨ヘッド２０とを備えている。ワークは、例えば、半導体ウェーハであり、後に図２を参照しながら説明するように、研磨ヘッド２０に保持された状態で、研磨パッド１０の上を摺動される。研磨パッド１０を貼付した定盤１１と研磨ヘッド２０との間の摺動は、例えば、研磨パッド１０を貼付した定盤１１を回転させながら、研磨ヘッド２０を定盤１１の回転軸と平行にずらした回転軸で回転させることで実施することができる。さらに、研磨ヘッド２０の回転軸を水平方向に移動させながら研磨を行ってもよい。 Figure 1 is a schematic diagram of a polishing apparatus according to an embodiment of the present invention. As shown in Figure 1, the polishing apparatus 100 includes a platen 11 to which a polishing pad 10 is attached, and a membrane-type polishing head 20 for pressing a workpiece against the platen 11 to polish it. The workpiece, for example, is a semiconductor wafer, and as will be described later with reference to Figure 2, it is held by the polishing head 20 and slid over the polishing pad 10. The sliding between the platen 11 to which the polishing pad 10 is attached and the polishing head 20 can be achieved, for example, by rotating the platen 11 to which the polishing pad 10 is attached while rotating the polishing head 20 about an axis of rotation that is offset parallel to the axis of rotation of the platen 11. Furthermore, polishing may be performed while moving the axis of rotation of the polishing head 20 horizontally.
図２は、研磨ヘッドの構成を示す概略断面図である。図２に示すように、研磨ヘッド２０は、研磨パッド１０を貼付した定盤１１にメンブレン２１を用いてワークＷを押圧するメンブレン式の研磨ヘッドである。メンブレン２１は、外リング２２を介してメンブレン２１の外周部を研磨ヘッド２０の支持体２３に固定され、研磨ヘッド２０の内部に空気室２４を形成している。そして、メンブレン２１は、空気室２４の気圧を調整することで研磨パッド１０を貼付した定盤１１にワークＷを押圧する圧力を調整する。なお、研磨ヘッド２０の空気室２４を分割し、中心部を押圧する中心部制御圧力と外周部を押圧する外周部制御圧力とを独立に制御可能とすることが好ましい。 Figure 2 is a schematic cross-sectional view showing the configuration of the polishing head. As shown in Figure 2, the polishing head 20 is a membrane-type polishing head that uses a membrane 21 to press the workpiece W against the surface plate 11 to which the polishing pad 10 is affixed. The outer periphery of the membrane 21 is fixed to the support 23 of the polishing head 20 via an outer ring 22, forming an air chamber 24 inside the polishing head 20. The membrane 21 adjusts the pressure with which the workpiece W is pressed against the surface plate 11 to which the polishing pad 10 is affixed by adjusting the air pressure in the air chamber 24. It is preferable to divide the air chamber 24 of the polishing head 20 so that the central control pressure that presses the center and the peripheral control pressure that presses the peripheral portion can be controlled independently.
また、研磨ヘッド２０は、ワークＷの外周を保持するためのリテーナリング２５を研磨ヘッド２０の外周に備えている。前述したように、研磨ヘッド２０は、例えば、研磨パッド１０を貼付した定盤１１を回転させながら、研磨ヘッド２０を定盤１１の回転軸と平行にずらした回転軸で回転させることで、定盤１１に貼付した研磨パッド１０上でワークＷを摺動させる。このとき、ワークＷが研磨パッド１０から外れないように、研磨ヘッド２０の外周に取り付けられたリテーナリング２５はワークＷの外周を保持する。 The polishing head 20 also has a retainer ring 25 on its outer periphery for holding the outer periphery of the workpiece W. As described above, the polishing head 20 slides the workpiece W over the polishing pad 10 affixed to the surface plate 11 by, for example, rotating the surface plate 11 to which the polishing pad 10 is affixed, while rotating the polishing head 20 on an axis of rotation that is offset parallel to the axis of rotation of the surface plate 11. At this time, the retainer ring 25 attached to the outer periphery of the polishing head 20 holds the outer periphery of the workpiece W to prevent the workpiece W from coming off the polishing pad 10.
図３は、本発明の実施形態に係る研磨パッドの概略断面図である。図３に示すように、研磨パッド１０は、基材１２の上にナップ層１３を形成して構成されている。基材１２は、例えば、不織布であり、ナップ層１３は、例えば、ポリウレタン樹脂で形成されている。また、ナップ層１３は、図３に示すように、下地ナップ層１４とそれよりも厚い突起ナップ層１５とに分かれている。下地ナップ層１４は、ポリウレタン樹脂のナップ層１３に溝を彫ることで形成することができる。つまり、突起ナップ層１５は、ナップ層１３において溝を彫らなかった領域である。 Figure 3 is a schematic cross-sectional view of a polishing pad according to an embodiment of the present invention. As shown in Figure 3, the polishing pad 10 is constructed by forming a nap layer 13 on a substrate 12. The substrate 12 is, for example, a nonwoven fabric, and the nap layer 13 is formed of, for example, a polyurethane resin. As shown in Figure 3, the nap layer 13 is further divided into a base nap layer 14 and a thicker protruding nap layer 15. The base nap layer 14 can be formed by carving grooves in the polyurethane resin nap layer 13. In other words, the protruding nap layer 15 is the area of the nap layer 13 where no grooves have been carved.
基材１２の上に形成するナップ層１３の厚さ、すなわち突起ナップ層１５の厚さＷは、例えば、３５０μｍ以上である。また、下地ナップ層１４と突起ナップ層１５との高低差Ｄは、２５０μｍから２８０μｍの範囲である。下地ナップ層１４と突起ナップ層１５との高低差Ｄが２８０μｍより大きい場合、研磨時に下地ナップ層１４と突起ナップ層１５との高低差Ｄが十分に小さくならず、研磨むらが生じてしまう。一方、下地ナップ層１４と突起ナップ層１５との高低差Ｄが２８０μｍより小さい場合、研磨終了後の回収時にワークが研磨パッド１０に張り付き、ワークの回収が困難になる。 The thickness of the nap layer 13 formed on the substrate 12, i.e., the thickness W of the protruding nap layer 15, is, for example, 350 μm or more. The height difference D between the base nap layer 14 and the protruding nap layer 15 is in the range of 250 μm to 280 μm. If the height difference D between the base nap layer 14 and the protruding nap layer 15 is greater than 280 μm, the height difference D between the base nap layer 14 and the protruding nap layer 15 will not be sufficiently small during polishing, resulting in uneven polishing. On the other hand, if the height difference D between the base nap layer 14 and the protruding nap layer 15 is less than 280 μm, the workpiece will stick to the polishing pad 10 when it is collected after polishing, making it difficult to collect the workpiece.
図４は、研磨時における研磨パッドにおける状態を示す概略断面図であり、図５は、ワークの回収時における研磨パッドにおける状態を示す概略断面図である。 Figure 4 is a schematic cross-sectional view showing the state of the polishing pad during polishing, and Figure 5 is a schematic cross-sectional view showing the state of the polishing pad when the workpiece is being removed.
図４に示すように、研磨パッド１０のナップ層１３は、研磨時にワークＷを研磨パッド１０に押圧することによって、突起ナップ層１５が圧縮される。結果、研磨時には研磨パッド１０では、下地ナップ層１４と突起ナップ層１５との高低差が２０μｍから４０μｍの範囲になる。これにより、下地ナップ層１４および突起ナップ層１５がワークＷに接触するようになり、研磨面に溝を形成していない研磨パッドと同等に平坦な研磨を行うことができる。具体的には、研磨時に研磨ヘッド２０が１０ＭＰａ以上の圧力でワークＷを研磨パッド１０に押圧することで、下地ナップ層１４と突起ナップ層１５との高低差が２０μｍから４０μｍの範囲になる。 As shown in Figure 4, the protruding nap layer 15 of the polishing pad 10 is compressed by pressing the workpiece W against the polishing pad 10 during polishing. As a result, the height difference between the base nap layer 14 and the protruding nap layer 15 on the polishing pad 10 during polishing is in the range of 20 μm to 40 μm. This brings the base nap layer 14 and the protruding nap layer 15 into contact with the workpiece W, allowing for polishing that is as flat as that achieved by a polishing pad that does not have grooves on the polishing surface. Specifically, when the polishing head 20 presses the workpiece W against the polishing pad 10 with a pressure of 10 MPa or more during polishing, the height difference between the base nap layer 14 and the protruding nap layer 15 is in the range of 20 μm to 40 μm.
一方、図５に示すように、研磨パッド１０のナップ層１３は、ワークＷの回収時にワークＷに負荷する圧力を開放することことによって、突起ナップ層１５の圧縮も開放される。これにより、下地ナップ層１４と突起ナップ層１５との高低差が少なくとも４０μｍよりも大きくなる。すると、研磨面に溝を形成してある研磨パッドと同様にワークＷの回収が容易になる。なお、回収時には研磨ヘッド２０がワークＷを研磨パッド１０に押圧する圧力を１０ＭＰａよりも低い圧力にすることで、下地ナップ層１４と突起ナップ層１５との高低差が４０μｍよりも大きくなる。 On the other hand, as shown in Figure 5, when the pressure applied to the workpiece W is released during recovery, the compression of the protruding nap layer 15 of the nap layer 13 of the polishing pad 10 is also released. This increases the height difference between the base nap layer 14 and the protruding nap layer 15 to at least 40 μm. This makes it easier to recover the workpiece W, just like a polishing pad with grooves formed in the polishing surface. During recovery, the pressure with which the polishing head 20 presses the workpiece W against the polishing pad 10 to less than 10 MPa increases the height difference between the base nap layer 14 and the protruding nap layer 15 to more than 40 μm.
図６は、研磨後の平坦性を示すグラフである。図６に示すグラフには、本発明の実施による研磨を施したウェーハの平坦度と、比較例として通常の溝を形成してある研磨パッドを用いて研磨を施したウェーハの平坦度とが示されている。図６に示されたグラフから分かるように、本発明の実施による研磨では、研磨パッドに溝が形成されているにも拘らず、研磨時には下地ナップ層および突起ナップ層がウェーハに接触するようになり、研磨面に溝を形成していない研磨パッドと同等に平坦な研磨を行うことができる。一方、図６に示されたグラフから分かるように、溝を形成してある研磨パッドを用いて研磨を施した場合、溝に起因する平坦度の不均一性が発生している。 Figure 6 is a graph showing the flatness after polishing. The graph in Figure 6 shows the flatness of a wafer polished according to the present invention and, as a comparative example, the flatness of a wafer polished using a polishing pad with conventional grooves. As can be seen from the graph in Figure 6, when polishing according to the present invention, even though grooves are formed in the polishing pad, the base nap layer and protruding nap layer come into contact with the wafer during polishing, allowing for polishing that is as flat as with a polishing pad that does not have grooves on the polishing surface. On the other hand, as can be seen from the graph in Figure 6, when polishing is performed using a polishing pad with grooves, non-uniformity in flatness occurs due to the grooves.
図７は、片面研磨後のＬＰＤ数の比較を示すグラフである。図７に示すグラフには、本発明の実施による片面研磨を施したウェーハにおけるＬＰＤ（Ｌｉｇｈｔ Ｐｏｉｎｔ Ｄｅｆｅｃｔ）数と、比較例として通常の溝を形成してある研磨パッドを用いて研磨を施したウェーハにおけるＬＰＤ数とが示されている。図７に示されたグラフから分かるように、発明の実施による研磨では、比較例と比べてＬＰＤ数が２７％に減少した。 Figure 7 is a graph comparing the number of LPDs after single-sided polishing. The graph in Figure 7 shows the number of LPDs (Light Point Defects) on wafers that were subjected to single-sided polishing in accordance with the present invention, and the number of LPDs on wafers that were polished using a polishing pad with normal grooves as a comparative example. As can be seen from the graph in Figure 7, the number of LPDs was reduced by 27% when polishing in accordance with the present invention, compared to the comparative example.
以上示したように、本発明の実施形態に係る研磨パッド、研磨装置、および研磨方法では、研磨時には、研磨時には研磨面に溝を形成していないかのように機能し、ワークを回収する際には研磨面に溝を形成しているように機能するので、研磨面に溝を形成することと形成しないことの両方のメリットを享受できる。 As described above, the polishing pad, polishing apparatus, and polishing method according to the embodiments of the present invention function as if no grooves were formed on the polishing surface during polishing, and function as if grooves were formed on the polishing surface when the workpiece is retrieved, thereby providing the benefits of both forming and not forming grooves on the polishing surface.
１００ 研磨装置
１０ 研磨パッド
１１ 定盤
１２ 基材
１３ ナップ層
１４ 下地ナップ層
１５ 突起ナップ層
２０ 研磨ヘッド
２１ メンブレン
２２ 外リング
２３ 支持体
２４ 空気室
２５ リテーナリング
Ｗ ワーク
REFERENCE SIGNS LIST 100 Polishing device 10 Polishing pad 11 Surface plate 12 Base material 13 Nap layer 14 Base nap layer 15 Protruding nap layer 20 Polishing head 21 Membrane 22 Outer ring 23 Support 24 Air chamber 25 Retainer ring W Workpiece
Claims (10)
複数の下地ナップ層と前記複数の下地ナップ層よりも厚く、前記定盤に貼付け時に表面に突起する複数の突起ナップ層とから構成されるナップ層を有し、
前記複数の下地ナップ層は前記複数の突起ナップ層と交互に隣り合いながら前記複数の突起ナップ層と共に前記ナップ層の表面を形成し、
前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であり、かつ、前記研磨ヘッドが前記ワークを前記研磨パッドに押圧する圧力が１０ＭＰａ以上である場合、前記下地ナップ層と前記突起ナップ層との高低差が２０μｍから４０μｍの範囲になることを特徴とする研磨パッド。 A polishing pad that is attached to a surface plate to polish a workpiece by pressing it against the surface plate using a membrane-type polishing head,
a nap layer including a plurality of base nap layers and a plurality of protruding nap layers that are thicker than the base nap layers and protrude from the surface when the base nap layer is attached to the surface plate;
the plurality of base nap layers are alternately adjacent to the plurality of protruding nap layers and together with the plurality of protruding nap layers form a surface of the nap layer;
A polishing pad characterized in that the difference in height between the base nap layer and the protruding nap layer is in the range of 250 μm to 280 μm, and when the pressure with which the polishing head presses the workpiece against the polishing pad is 10 MPa or more, the difference in height between the base nap layer and the protruding nap layer is in the range of 20 μm to 40 μm.
複数の下地ナップ層と前記複数の下地ナップ層よりも厚く、前記定盤に貼付け時に表面に突起する複数の突起ナップ層とから構成されるナップ層を有し、
前記複数の下地ナップ層は前記複数の突起ナップ層と交互に隣り合いながら前記複数の突起ナップ層と共に前記ナップ層の表面を形成し、
前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であり、かつ、前記研磨ヘッドが前記ワークを押圧する圧力が１０ＭＰａ以上である場合、前記下地ナップ層および前記突起ナップ層が前記ワークに接触することを特徴とする研磨パッド。 A polishing pad that is attached to a surface plate to polish a workpiece by pressing it against the surface plate using a membrane-type polishing head,
a nap layer including a plurality of base nap layers and a plurality of protruding nap layers that are thicker than the base nap layers and protrude from the surface when the base nap layer is attached to the surface plate;
the plurality of base nap layers are alternately adjacent to the plurality of protruding nap layers and together with the plurality of protruding nap layers form a surface of the nap layer;
A polishing pad characterized in that the difference in height between the base nap layer and the protruding nap layer is in the range of 250 μm to 280 μm, and when the pressure with which the polishing head presses the workpiece is 10 MPa or more, the base nap layer and the protruding nap layer come into contact with the workpiece.
前記定盤に貼付する研磨パッドと、を備え、
前記研磨パッドは、複数の下地ナップ層と前記複数の下地ナップ層よりも厚く、前記定盤に貼付け時に表面に突起する複数の突起ナップ層とから構成されるナップ層を有し、
前記複数の下地ナップ層は前記複数の突起ナップ層と交互に隣り合いながら前記複数の突起ナップ層と共に前記ナップ層の表面を形成し、
前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であり、かつ、前記研磨ヘッドが前記ワークを前記研磨パッドに押圧する圧力が１０ＭＰａ以上である場合、前記下地ナップ層と前記突起ナップ層との高低差が２０μｍから４０μｍの範囲になることを特徴とする研磨装置。 a membrane-type polishing head for pressing the workpiece against the surface plate to polish it;
a polishing pad attached to the surface plate;
the polishing pad has a nap layer composed of a plurality of base nap layers and a plurality of protruding nap layers that are thicker than the plurality of base nap layers and protrude from the surface when the polishing pad is attached to the platen;
the plurality of base nap layers are alternately adjacent to the plurality of protruding nap layers and together with the plurality of protruding nap layers form a surface of the nap layer;
A polishing apparatus characterized in that the difference in height between the base nap layer and the protruding nap layer is in the range of 250 μm to 280 μm, and when the pressure with which the polishing head presses the workpiece against the polishing pad is 10 MPa or more, the difference in height between the base nap layer and the protruding nap layer is in the range of 20 μm to 40 μm.
前記定盤に貼付する研磨パッドと、を備え、
前記研磨パッドは、複数の下地ナップ層と前記複数の下地ナップ層よりも厚く、前記定盤に貼付け時に表面に突起する複数の突起ナップ層とから構成されるナップ層を有し、
前記複数の下地ナップ層は前記複数の突起ナップ層と交互に隣り合いながら前記複数の突起ナップ層と共に前記ナップ層の表面を形成し、
前記下地ナップ層と前記突起ナップ層との高低差が２５０μｍから２８０μｍの範囲であり、かつ、前記研磨ヘッドが前記ワークを前記研磨パッドに押圧する圧力が１０ＭＰａ以上である場合、前記下地ナップ層および前記突起ナップ層が前記ワークに接触することを特徴とする研磨装置。 a membrane-type polishing head for pressing the workpiece against the surface plate to polish it;
a polishing pad attached to the surface plate;
the polishing pad has a nap layer composed of a plurality of base nap layers and a plurality of protruding nap layers that are thicker than the plurality of base nap layers and protrude from the surface when the polishing pad is attached to the platen;
the plurality of base nap layers are alternately adjacent to the plurality of protruding nap layers and together with the plurality of protruding nap layers form a surface of the nap layer;
A polishing apparatus characterized in that the difference in height between the base nap layer and the protruding nap layer is in the range of 250 μm to 280 μm, and when the pressure with which the polishing head presses the workpiece against the polishing pad is 10 MPa or more, the base nap layer and the protruding nap layer come into contact with the workpiece.
研磨時に前記下地ナップ層と前記突起ナップ層との高低差が２０μｍから４０μｍの範囲になるように、メンブレン式の研磨ヘッドを用いてワークを前記研磨パッドに押圧して研磨することを特徴とする研磨方法。 a polishing pad having a nap layer composed of a plurality of base nap layers and a plurality of protruding nap layers that are thicker than the base nap layers and protrude onto the surface when the pad is attached to the surface, the base nap layers being alternately adjacent to the protruding nap layers and forming the surface of the nap layer together with the protruding nap layers , and the height difference between the base nap layers and the protruding nap layers being in the range of 250 μm to 280 μm, the polishing pad being attached to the surface;
A polishing method characterized by using a membrane-type polishing head to press the workpiece against the polishing pad so that the height difference between the base nap layer and the protruding nap layer is in the range of 20 μm to 40 μm during polishing.
研磨時に前記下地ナップ層および前記突起ナップ層がワークに接触するように、メンブレン式の研磨ヘッドを用いて前記ワークを前記研磨パッドに押圧することを特徴とする研磨方法。 a polishing pad having a nap layer composed of a plurality of base nap layers and a plurality of protruding nap layers that are thicker than the base nap layers and protrude onto the surface when the pad is attached to the surface, the base nap layers being alternately adjacent to the protruding nap layers and forming the surface of the nap layer together with the protruding nap layers , and the height difference between the base nap layers and the protruding nap layers being in the range of 250 μm to 280 μm, the polishing pad being attached to the surface;
A polishing method comprising pressing the workpiece against the polishing pad using a membrane-type polishing head so that the base nap layer and the protruding nap layer come into contact with the workpiece during polishing.
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