JP7317506B2 - holding device - Google Patents

Description

The technology disclosed in this specification relates to a holding device.

For example, an electrostatic chuck is used as a holding device for holding a wafer when manufacturing semiconductor devices. The electrostatic chuck includes a ceramic member, a base member made of metal, for example, a joining portion that joins the ceramic member and the base member, and a chuck electrode disposed inside the ceramic member. The wafer is attracted and held on the surface of the ceramic member (hereinafter referred to as "attraction surface") by utilizing the electrostatic attraction generated by the application of .

If the temperature of the wafer held on the attraction surface of the electrostatic chuck does not reach the desired temperature, there is a risk that the accuracy of each process (film formation, etching, etc.) on the wafer will drop. Therefore, in the electrostatic chuck, a heater electrode is arranged inside the ceramic member, and the heating of the heater electrode controls the temperature of the attracting surface of the ceramic member to a desired temperature.

Here, when W (tungsten) is used as the material for forming the heater electrode, not only W but also W, W carbides such as WC (tungsten monocarbide) and W ₂ C (tungsten monocarbide) may be generated. Here, the specific resistance of WC (approximately 19×10 ⁻⁶ Ωcm) is greater than that of W (approximately 6× ^{10 −6} Ωcm), and the specific resistance of W ₂ C (approximately 53×10 ⁻⁶ Ωcm) is , even greater than the resistivity of WC. Therefore, when W ₂ C exists in the heater electrode, the electrical resistance of the heater electrode significantly increases. Therefore, conventionally, a heater electrode is formed on a ceramic green sheet using a conductive paste containing WC particles, and fired at a temperature lower than the generation temperature of W ₂ C, thereby producing a ceramic member in which the heater electrode is arranged. is known (see Patent Document 1, for example).

JP-A-2000-12194

For example, from the viewpoint of improving the heat generation efficiency of the heater electrode, it is sometimes required to improve the temperature coefficient of resistance of the heater electrode. In the conventional technique using the conductive paste containing WC particles, even if the generation of W ₂ C can be reduced, the temperature coefficient of resistance of the heater electrode is low. As a result, for example, the attraction surface of the ceramic member cannot be heated to a predetermined target temperature, or even if the attraction surface of the ceramic member can be heated to the predetermined target temperature, the heat generation efficiency of the heater electrode decreases. , there was a problem.

Such a problem is not limited to the heater electrode, but is common to other ceramic members provided with resistors. Moreover, such a problem is not limited to electrostatic chucks, and is common to all holding devices that include a ceramic member provided with a resistor and hold an object on the surface of the ceramic member.

This specification discloses a technology capable of solving the above-described problems.

The technology disclosed in this specification can be implemented as the following modes.

(1) A holding device disclosed in the present specification includes a ceramic member having a first surface substantially orthogonal to a first direction, and a resistor provided on the ceramic member. In a holding device for holding an object on the first surface, in at least one specific cross section of the resistor, the resistor includes WC, and the atomic ratio of C to W in the resistor is Greater than 1.

The inventor of the present application newly found that the temperature coefficient of resistance of the resistor is significantly improved when the atomic ratio of C to W in the resistor is greater than 1. Therefore, in this holding device, the resistor provided on the ceramic member contains WC, and the atomic number ratio of C to W in the resistor is greater than 1 in at least one specific cross section of the resistor. As a result, according to this holding device, the temperature coefficient of resistance of the resistor can be improved as compared with a configuration in which the atomic number ratio of C to W in the resistor is 1 or less.

(2) In the above-described holding device, the atomic number ratio of C to W in the resistor may be 1.01 or more in the specific cross section. The inventors of the present application newly found that when the atomic ratio of C to W in the resistor is greater than 1, the material resistivity of the resistor is not easily affected by the atomic ratio of C to W in the resistor. I found it in Therefore, in this holding device, the atomic number ratio of C to W in the resistor is 1.01 or more. Thus, according to this holding device, it is possible to improve the temperature coefficient of resistance of the resistor while suppressing an increase in the material specific resistance of the resistor.

(3) In the above holding device, the temperature coefficient of resistance of the resistor may be 4500 ppm/°C or more and 6500 ppm/°C or less. In this holding device, the temperature coefficient of resistance is 4500 ppm/°C or more and 6500 ppm/°C or less. Thus, according to the present holding device, a holding device provided with a resistor having a higher temperature coefficient of resistance than the temperature coefficient of resistance (approximately 3900 ppm/° C.) of a resistor made of platinum, for example, can be provided. can be done.

It should be noted that the technology disclosed in this specification can be implemented in various forms. It is possible to realize the present invention in the form of a ceramic member, a manufacturing method thereof, and the like.

1 is a perspective view schematically showing an external configuration of a heating device 100 according to an embodiment; FIG. It is an explanatory view showing roughly the XZ section composition of heating device 100 in an embodiment. FIG. 5 is an explanatory diagram showing evaluation results regarding the material specific resistance and temperature coefficient of resistance of the heater electrode in each sample; FIG. 10 is an explanatory view schematically showing the XZ cross-sectional configuration of the vicinity of the heater electrode in sample 3;

A. This embodiment:
A-1. Configuration of heating device 100:
FIG. 1 is a perspective view schematically showing the external configuration of a heating device 100 according to the present embodiment, and FIG. 2 is an explanatory view schematically showing the XZ cross-sectional configuration of the heating device 100 according to the present embodiment. Each figure shows mutually orthogonal XYZ axes for specifying directions. In this specification, for the sake of convenience, the positive direction of the Z-axis is referred to as the upward direction, and the negative direction of the Z-axis is referred to as the downward direction. may

The heating device 100 is a device that holds an object (eg, a semiconductor wafer W) and heats it to a predetermined processing temperature (eg, about 400 to 650° C.), and is also called a susceptor. The heating apparatus 100 is used as part of a semiconductor manufacturing apparatus such as, for example, a film forming apparatus (CVD film forming apparatus, sputtering film forming apparatus, etc.) or an etching apparatus (plasma etching apparatus, etc.).

As shown in FIGS. 1 and 2, the heating device 100 includes a holder 10 and a columnar support 20. As shown in FIG.

(Holding body 10)
The holding body 10 is a substantially disk-shaped member having a holding surface S1 and a back surface S2 that are substantially orthogonal to a predetermined direction (vertical direction in this embodiment). The holder 10 is made of, for example, ceramics containing AlN (aluminum nitride) as a main component. In addition, the main component here means the component with the highest content ratio (weight ratio). The content of AlN in the ceramic portion of the holder 10 is preferably 90% by volume or more and 99.5% by volume or less. The diameter of the holder 10 is, for example, about 100 mm or more and 500 mm or less, and the thickness (length in the vertical direction) of the holder 10 is, for example, about 3 mm or more and 20 mm or less.

As shown in FIG. 2, a heater electrode 50 configured by a resistance heating element for heating the holder 10 is arranged inside the holder 10 . A detailed configuration of the heater electrode 50 will be described later. A pair of ends of the heater electrode 50 are arranged on the peripheral side of the holder 10 . A pair of peripheral-side via conductors 51 , a pair of conductive paths 53 , and a via group 52 are provided inside the holder 10 . Each peripheral-side via conductor 51 is a linear conductor extending in the vertical direction, and is positioned on the peripheral side of holder 10 . The upper end of each peripheral via conductor 51 is connected to each end of the heater electrode 50 . Each conductive path 53 is a linear conductor extending in the radial direction of holder 10 , and the lower end of each peripheral via conductor 51 is connected to the radially outer end of each conductive path 53 . The via group 52 includes a plurality of (two in this embodiment) vias 52A that are linear conductors extending in the vertical direction. The upper end of each via 52</b>A is connected to the radial inner end of each conductive path 53 . A pair of recesses 12 are formed in the vicinity of the central portion of the rear surface S2 of the holder 10, and a power receiving electrode (electrode pad) 54 is arranged in each recess 12. As shown in FIG. Each power receiving electrode 54 is arranged so as to be exposed on the back surface S<b>2 of the holder 10 , and the exposed portion of the power receiving electrode 54 is covered with a brazed portion 56 . A lower end of each via 52A is connected to each power receiving electrode 54 . Thereby, the heater electrode 50 and each power receiving electrode 54 are electrically connected.

(Column support 20)
The columnar support 20 is a substantially cylindrical member extending in the predetermined direction (vertical direction). Like the holder 10, the columnar support 20 is made of, for example, AlN-based ceramics. The outer diameter of the columnar support 20 is, for example, approximately 30 mm or more and 90 mm or less, and the height (vertical length) of the columnar support 20 is, for example, approximately 100 mm or more and 300 mm or less.

(joint portion 30)
The holder 10 and the columnar support 20 are arranged such that the back surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 face each other in the vertical direction. The columnar support 20 is joined to the vicinity of the central portion of the rear surface S2 of the holder 10 via a joint 30 made of a jointing material which will be described later.

As shown in FIG. 2, the columnar support 20 is formed with a through hole 22 that opens toward the rear surface S2 of the holder 10 . The through-hole 22 is a hole with a substantially circular cross section that extends in substantially the same direction as the vertical direction and has a substantially constant inner diameter over the extending direction. A plurality of (two in this embodiment) electrode terminals 70 are housed in the through hole 22 . An upper end portion of each electrode terminal 70 is joined to the power receiving electrode 54 via a brazing portion 56 containing a metal brazing material (for example, gold brazing material). When a voltage is applied to the heater electrodes 50 from a power source (not shown) through the electrode terminals 70, the power receiving electrodes 54, and the via group 52 (vias 52A), the heater electrodes 50 generate heat, and the holding surface S1 of the holder 10 is heated. An object (eg, a semiconductor wafer W) held in the chamber is heated to a predetermined temperature (eg, about 400 to 650° C.).

A-2. Detailed configuration of the heater electrode 50:
A detailed configuration of the heater electrode 50 will be described. The heater electrode 50 is made of a material containing W (tungsten) as a conductive material. In addition to W, the heater electrode 50 may contain other conductive materials such as Mo (molybdenum). Also, the heater electrode 50 may contain components other than the conductive material. For example, in order to reduce the difference in thermal expansion between the holder 10 and the heater electrode 50 , the heater electrode 50 preferably contains the same ceramics as the main component of the holder 10 .

Also, the heater electrode 50 satisfies at least the following first requirement.
<First requirement>
In at least one specific cross section of the heater electrode 50, the heater electrode 50 contains WC (tungsten monocarbide), and the atomic ratio of C (carbon) to W in the heater electrode 50 (hereinafter referred to as "carbon ratio") ) is greater than one.
Note that the “carbon ratio” is the ratio of the number of C atoms to the number of W atoms with respect to W and C contained in the heater electrode 50 . For example, if the heater electrode 50 mainly contains WC and C, it satisfies the first requirement.

Moreover, the heater electrode 50 preferably satisfies the following second requirement.
<Second requirement>
In at least one specific cross section of the heater electrode 50, the carbon ratio in the heater electrode 50 is 1.01 or more.
In addition, in at least one specific cross section of the heater electrode 50, the carbon ratio in the heater electrode 50 is preferably 1.20 or less. As will be described later, when the first condition is satisfied, even if the carbon ratio in the heater electrode 50 is high to some extent, the material specific resistance (μΩ·cm) of the heater electrode 50 is substantially constant, but the carbon ratio is 1. This is because it is assumed that if the C content becomes higher than .20 and the C content becomes excessive, the specific resistance of the material of the heater electrode 50 is affected.

Further, the heater electrode 50 preferably satisfies the following third requirement.
<Third requirement>
The resistance temperature coefficient of the heater electrode 50 is 4500 ppm/°C or more and 6500 ppm/°C or less.
"Temperature coefficient of resistance" is a parameter that indicates the rate of change in resistance value with respect to temperature change of a substance. means. "Temperature coefficient of resistance" is expressed by the following formula.
"Temperature coefficient of resistance (ppm/°C)" = (R-Ra)/Ra/(T-Ta) x 10 ⁶
Ra: Resistance value (Ω) at the reference temperature
Ta: reference temperature (°C)
R: Resistance value (Ω) at an arbitrary temperature
T: arbitrary temperature (°C)
The temperature coefficient of resistance of heater electrode 50 is more preferably 5000 ppm/° C. or more.

Further, the heater electrode 50 preferably satisfies the following fourth requirement.
<Fourth requirement>
The presence of WC and W ₂ C in heater electrode 50 can be confirmed by X-ray crystallography (XRD) in at least one specific cross section of heater electrode 50 . Also, the content (wt%) of each substance (WC, W ₂ C) can be confirmed _by observing the intensity peak ratio. It is possible to suppress the occurrence of resistance variations in the heater electrode 50 due to scattering of high-resistance W ₂ C in 50 . In at least one specific cross section of the heater electrode 50, the atomic ratio of W ₂ C (tungsten monocarbide) to WC in the heater electrode 50 is preferably 0.1 or less.

The heating device 100 corresponds to the holding device in the claims, and the vertical direction (Z-axis direction) corresponds to the first direction in the claims. The holder 10 corresponds to the ceramic member in the claims, and the holding surface S1 corresponds to the first surface in the claims. The heater electrode 50 corresponds to a resistor in claims.

A-3. Manufacturing method of heating device 100:
A method of manufacturing the heating device 100 is, for example, as follows. First, the holder 10 and the columnar support 20 are produced.

A method for manufacturing the holder 10 is, for example, as follows. First, an organic solvent such as toluene is added to a mixture of 100 parts by weight of AlN powder, 1 part by weight of Y ₂ O ₃ (yttrium oxide) powder, 20 parts by weight of an acrylic binder, and appropriate amounts of a dispersant and a plasticizer. and mixed in a ball mill to prepare a green sheet slurry. This green sheet slurry is formed into a sheet by a casting apparatus and then dried to produce a plurality of green sheets.

Further, 80 parts by weight of W powder, 3.5 parts by weight of AlN powder, 3 parts by weight of binder, and 13.5 parts by weight of solvent are mixed and kneaded to prepare a metallizing paste. By printing this metallizing paste using, for example, a screen printer, an unsintered conductor layer that will later become the heater electrode 50, the power receiving electrode 54, and the like is formed on a specific green sheet. In addition, by printing in a state in which via holes are provided in advance in the green sheet, an unsintered conductor portion that will later become the via group 52 (vias 52A) is formed.

Next, a plurality (for example, 30) of these green sheets are thermally compressed, and the periphery is cut as necessary to produce a green sheet laminate. This green sheet laminate is cut by machining to produce a disk-shaped molded body, and this molded body is degreased at 450° C. in a nitrogen atmosphere to obtain a degreased body. The resulting degreased body is placed in an AlN sagger in a carbon furnace for heat treatment, and fired in a nitrogen atmosphere under normal pressure, for example, at 1825° C. for 4 hours to produce a fired body. Thus, the heater electrode 50 produced by firing at 1800° C. or more for 4 hours or more in a nitrogen atmosphere contains almost no W ₂ C and mainly contains WC and C. Thus, the heater electrode 50 that satisfies at least the first requirement can be produced. After that, the surface of this fired body is polished. The holder 10 is produced by the above steps. The carbon ratio in the heater electrode 50 can be adjusted by changing degreasing conditions such as degreasing temperature and degreasing time.

A method for manufacturing the columnar support 20 is, for example, as follows. First, an organic solvent such as methanol is added to a mixture of 100 parts by weight of aluminum nitride powder, 1 part by weight of yttrium oxide powder, 3 parts by weight of a PVA binder, and appropriate amounts of a dispersant and a plasticizer. to obtain a slurry. This slurry is granulated with a spray dryer to produce a raw material powder. Next, the raw material powder is filled into a rubber mold in which cores corresponding to the through-holes 22 are arranged, and cold isostatic pressing is performed to obtain a compact. The molded body obtained is degreased, and the degreased body is fired. Through the steps described above, the columnar support 20 is manufactured.

Next, the holder 10 and the columnar support 20 are joined together. After the back surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 are subjected to lapping as necessary, at least one of the rear surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 is coated with, for example, a rare earth or organic compound. After uniformly applying a bonding agent made into a paste by mixing a solvent or the like, degreasing treatment is performed. Next, the back surface S2 of the holder 10 and the upper surface S3 of the columnar support 20 are superimposed and hot-pressed to bond the holder 10 and the columnar support 20 together.

After joining the holder 10 and the columnar support 20, each electrode terminal 70 is inserted into each through-hole 22, and the upper end of each electrode terminal 70 is brazed to each power receiving electrode 54 with, for example, a gold brazing material. A brazed portion 56 was formed by the above. The heating device 100 having the configuration described above is manufactured by the manufacturing method described above.

A-4. Effect of this embodiment:
When W is used as a material for forming a resistor, not only W but also WC, which is a carbide of W, may be added to the resistor depending on factors such as the degree of residual carbon in the ceramic material in the manufacturing stage of the ceramic member and the firing conditions. and W ₂ C may be generated. Here, if the resistor is formed using a conductive paste containing WC particles as in the above-described prior art, the generation of high-resistance W ₂ C can be suppressed, and the increase in the electrical resistance of the resistor can be suppressed. . However, since the temperature coefficient of resistance of a resistor made mainly of WC is relatively low, it is not possible to meet the demand for improving the temperature coefficient of resistance.

On the other hand, the inventors of the present application found that when the atomic ratio (carbon ratio) of C to W in the resistor (heater electrode 50 in this embodiment) is greater than 1, the temperature coefficient of resistance of the resistor is significantly improved. I found something new to do. Therefore, in the heating device 100 of the present embodiment, in at least one specific cross section of the heater electrode 50, the resistor provided in the ceramic member contains WC, and the carbon ratio in the resistor is greater than 1 (the above-mentioned 1 requirements). As a result, according to the present embodiment, the temperature coefficient of resistance of the heater electrode 50 can be improved compared to a configuration in which the carbon ratio in the heater electrode 50 is 1 or less.

In addition, the inventor of the present application newly found that when the carbon ratio in the resistor is greater than 1, the material specific resistance of the resistor is less likely to be affected by the atomic ratio of C to W in the resistor. . That is, as the carbon ratio increases, the content of W correspondingly decreases, so it is assumed that the material resistivity of the resistor increases. However, it has been found that the material resistivity of the resistor is stable within a predetermined range (for example, 30 μΩ·cm or less) regardless of the increase or decrease in the carbon ratio unless the carbon ratio is excessively high. Therefore, in the present embodiment, the ratio of carbon to the semiconductor wafer W in the heater electrode 50 is preferably 1.01 or more in the specific cross section (second requirement above). Thus, according to the present embodiment, it is possible to improve the temperature coefficient of resistance of the heater electrode 50 while suppressing an increase in the material specific resistance of the heater electrode 50 .

Further, in the present embodiment, the temperature coefficient of resistance of the heater electrode 50 is preferably 4500 ppm/° C. or more and 6500 ppm/° C. or less (the above third requirement). Thus, according to this embodiment, the heating device 100 provided with the heater electrode 50 having a higher temperature coefficient of resistance than the temperature coefficient of resistance (approximately 3900 ppm/° C.) of the heater electrode made of platinum, for example, is provided. can do.

A-5. Performance evaluation:
A plurality of ceramic member samples were produced, and performance evaluation was performed using the produced plural ceramic member samples. FIG. 3 is an explanatory diagram showing the evaluation results regarding the material specific resistance and temperature coefficient of resistance of the heater electrode in each sample. FIG. 4 is an explanatory view schematically showing the XZ cross-sectional configuration of the vicinity of the heater electrode in Sample 3. As shown in FIG.

A-5-1. For each sample:
As shown in FIG. 3, four samples were evaluated regarding the material specific resistance and resistance temperature coefficient of the heater electrode. The four samples as a whole have substantially the same configuration as the holder 10 in the heating device 100 described above. Specifically, it includes a ceramic member made of a material having an AlN content of 90 to 99.5% by volume, and a heater electrode provided inside the ceramic member. The heater electrode is made of a material containing W as a conductive material. Also, the heater electrode contains AlN. Each sample can be manufactured by a method similar to the manufacturing method described above.

The four samples are common in that the heater electrode contains W as the main component, but differ from each other in the carbon ratio in the heater electrode. A carbon ratio can be specified by the following method. First, the concentration of each component element (tungsten concentration, carbon concentration) contained in the heater electrode is specified for a specific cross section (for example, XZ cross section) near the heater electrode in each sample. The tungsten concentration is the atomic ratio (atm %) of W in the constituent elements contained in the heater electrode, and the carbon concentration is the atomic ratio (atm %) of C in the constituent elements contained in the heater electrode. The carbon ratio can then be determined by dividing the carbon concentration by the tungsten concentration. The concentration (atm %) of each component element in each sample can be specified by EPMA (Electron Probe Micro Analyzer) quantitative analysis. In the specific cross section near the heater electrode, the area for specifying the carbon ratio is from the position 1 μm below the top end of the metallized portion (heater electrode, that is, the portion where WC exists) to the bottom end of the metallized portion. It is an area up to a position 1 μm above.

In Sample 1, the heater electrode mainly contains W alone, and hardly contains W carbides such as WC and W ₂ C, and C, and the carbon ratio in the heater electrode is approximately zero. That is, Sample 1 does not meet the first requirement mentioned above. In sample 2, the heater electrode mainly contains WC and further contains W ₂ C, but hardly contains C, and the carbon ratio in the heater electrode is less than 0.5. That is, Sample 2 does not meet the first requirement mentioned above.

On the other hand, in samples 3 and 4, the heater electrode mainly contains WC and also contains C. In sample 3, the carbon ratio in the heater electrode is 1.05 (>1), and in sample 4, the carbon ratio in the heater electrode is 1.15 (>1). That is, Samples 3 and 4 satisfy the above first requirement. Furthermore, in samples 3 and 4, the carbon ratio in the heater electrode is 1.01 or more, so samples 3 and 4 satisfy the above second requirement. As shown in FIG. 4, in sample 3, the heater electrode mainly includes WC (dotted hatching in FIG. 4), and AlN (black part in FIG. 4) is scattered within the WC region. ing. Further, the heater electrode is dotted with a plurality of C (diagonally hatched portions) dissolved in WC. It should be noted that the solid solution of C in WC means that, in XRD, the intensity of WC when C is dissolved with respect to the diffraction angle showing the intensity peak of WC when C is not dissolved It can also be confirmed from the fact that the diffraction angle showing the peak shifts.

A-5-2. About the evaluation method:
The material specific resistance (μΩ·cm) of the heater electrode in each sample can be obtained as follows. First, the resistance value of the heater electrode in each sample is measured using a resistance meter. From the measured resistance value of the heater electrode, the area of the cross section perpendicular to the longitudinal direction of the heater electrode, and the length of the heater electrode, the material specific resistance of the heater electrode is obtained. Also, the resistance temperature coefficient (ppm/° C.) of the heater electrode in each sample can be obtained as follows. Each sample is heated, for example, in a furnace, and the resistance value of the heater electrode at each temperature during the temperature rise process of the sample is measured using a multimeter. Then, the temperature coefficient of resistance of the heater electrode is obtained from the amount of temperature change from the reference temperature to each temperature.

A-5-3. About the evaluation results:
In sample 1, the material specific resistance of the heater electrode is 28.6 μΩ·cm, which is suppressed to 30 μΩ·cm or less. This is because the heater electrode in Sample 1 does not contain WC or W ₂ C with high resistance. However, in sample 1, the temperature coefficient of resistance of the heater electrode is 3090 ppm/°C, which is lower than 4500 ppm/°C, for example. In sample 2, the material resistivity of the heater electrode is 69 μΩ·cm, which is far higher than 30 μΩ·cm. This is because in Sample 2, the heater electrode mainly contains WC or W ₂ C with high resistance. Moreover, in Sample 2, the temperature coefficient of resistance of the heater electrode is 3300 ppm/°C, which is lower than 4500 ppm/°C.

On the other hand, in sample 3, the material specific resistance of the heater electrode is 28.2 μΩ·cm, which is suppressed to 30 μΩ·cm or less. Moreover, in Sample 3, the temperature coefficient of resistance of the heater electrode is 5021 ppm/°C, which is higher than 4500 ppm/°C. In sample 4, the material specific resistance of the heater electrode is 26.8 μΩ·cm, which is suppressed to 30 μΩ·cm or less. Moreover, in Sample 4, the temperature coefficient of resistance of the heater electrode is 5649 ppm/°C, which is higher than 4500 ppm/°C. From the above, it can be seen that the temperature coefficient of resistance of the heater electrode is improved by satisfying the first requirement that the heater electrode contains WC and that the carbon ratio in the heater electrode is greater than 1. Further, by satisfying the second requirement that the carbon ratio in the heater electrode is 1.01 or more, the temperature coefficient of resistance of the heater electrode is improved while suppressing an increase in the material specific resistance of the heater electrode. I know it can be done.

B. Variant:
The technology disclosed in this specification is not limited to the above-described embodiments, and can be modified in various forms without departing from the scope of the invention. For example, the following modifications are possible.

The material for forming each member constituting the heating device 100 in the above embodiment is merely an example, and each member may be formed of another material. For example, in the heating device 100 of the above embodiment, the main component (ceramic particles) of the holder 10 and the columnar support 20 is AlN, but other ceramics such as Al ₂ O ₃ (alumina) may be used. may Further, the main component of the holder 10 and the main component of the columnar support 20 may be different materials. Even if the main component of the ceramic portion of the ceramic member is a material other than AlN (alumina, etc.), WC or W ₂ C is generated in the resistor due to residual carbon in the ceramic portion, and the temperature coefficient of resistance of the heater electrode decreases. You may have a problem with it going low. In contrast, by applying the present invention, the temperature coefficient of resistance of the resistor can be improved.

In the above embodiment, the heater electrode 50 is exemplified as the resistor, but the resistor is not limited to heating, and may be, for example, a temperature-measuring resistor. When the resistor is a temperature-measuring resistor, a large temperature coefficient of resistance of the resistor means high temperature sensitivity. Therefore, by applying the present invention, the temperature sensitivity of the temperature sensing resistor provided on the ceramic member is improved, and as a result, for example, the accuracy of measuring the temperature of the holding surface S1 of the ceramic member can be improved. Further, the resistor is not limited to being arranged inside the ceramic member, and may be arranged, for example, on the surface side of the ceramic member (for example, on the back surface S2 side of the holder 10 in the above embodiment). good.

Moreover, in the above-described embodiment, the heating device 100 may have a configuration that does not satisfy at least one of the above-described second to fourth requirements.

Also, the configuration of the heating device 100 in the above embodiment is merely an example, and various modifications are possible. For example, in the above-described embodiment, the holder 10 and the columnar support 20 have substantially circular outer shapes when viewed in the Z-axis direction, but they may have other shapes. Further, the electrode terminals accommodated in the through holes 22 formed in the columnar support 20 are not limited to the terminals electrically connected to the heater electrode 50, but are electrically connected to, for example, a radio frequency (RF) electrode that generates plasma. or a terminal electrically connected to an attraction electrode for electrostatic attraction. Further, in the above-described embodiment, the power receiving electrode 54 is arranged in the recess 12 formed on the back surface S2 of the holder 10, but it may be arranged on the back surface S2 of the holder 10. FIG. In short, the power receiving electrode only needs to be arranged on the second surface side of the holder.

Further, in the above embodiment, the via group 52 may include one via 52A, or may include three or more vias 52A.

The manufacturing method of the heating device 100 in the above embodiment is merely an example, and various modifications are possible.

The present invention is applicable not only to heating devices but also to holding devices such as electrostatic chucks and vacuum chucks. In short, the present invention is applicable to a holding device provided with a ceramic member provided with a resistor.

10: Holder 12: Recess 13: Solvent 20: Columnar support 22: Through hole 30: Joint 50: Heater electrode 51: Peripheral via conductor 52: Via group 52A: Via 53: Conductive path 54: Power receiving electrode 56: Brazed portion 70: Electrode terminal 80: W powder 100: Heating device S1: Holding surface S2: Back surface S3: Top surface W: Semiconductor wafer

Claims (2)

a ceramic member having a first surface substantially orthogonal to the first direction and containing AlN as a main component ;
a resistor provided on the ceramic member and containing AlN ;
A holding device for holding an object on the first surface of the ceramic member,
in at least one particular cross-section of the resistor, the resistor comprises WC, and an atomic ratio of C to W in the resistor is greater than 1;
The atomic number ratio of W ₂ C to WC in the resistor is 0.1 or less.
A holding device characterized by: A holding device according to claim 1, wherein
In the specific cross section, the atomic number ratio of C to W in the resistor is 1.01 or more,
A holding device characterized by:

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