JP7307001B2 - LASER PROCESSING APPARATUS AND METHOD, CHIP TRANSFER APPARATUS AND METHOD - Google Patents

Description

The present invention provides a laser processing apparatus and method for irradiating a laser beam to a plurality of chips to be processed, which are unevenly distributed among a plurality of chips arranged in a matrix on a workpiece at a predetermined pitch, and a method for processing the chips. The present invention relates to a chip transfer apparatus and method for transferring a transfer target chip arranged on the surface of a donor substrate to a transfer target portion set on a target substrate.

2. Description of the Related Art Conventionally, there has been known an apparatus (laser processing apparatus) that irradiates a spot with a focused laser beam (so-called laser ablation) in order to remove a thin film formed on a workpiece.

A technique has been proposed for irradiating a fuse provided in a circuit pattern of a semiconductor device with a laser beam to cut a wiring (for example, Patent Document 1).

In addition, in a transfer device that selectively transfers a plurality of elements (chips) arranged on a transfer source substrate (work) to another substrate, a laser beam and a galvanometer scanner are used to transfer the chips formed on the work. A technique for transferring is known (for example, Patent Document 2).

JP-A-11-19788 Japanese Patent No. 4600178

In the conventional technology, when a large number of chips to be processed are unevenly distributed on one workpiece, each chip is irradiated with a laser beam for processing. With such a method, even when a plurality of chips to be processed are adjacent to each other, the chips are processed one by one, which consumes a lot of time for processing, resulting in a decrease in productivity.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems. An object of the present invention is to provide a laser processing apparatus and method capable of processing.

In order to solve the above problems, one aspect of the present invention includes:
In a laser processing apparatus that irradiates a laser beam to a plurality of chips to be processed that are unevenly distributed among a plurality of chips arranged in a matrix on a workpiece at a predetermined pitch,
a laser oscillator that emits a laser beam;
a relative movement unit that changes the irradiation position of the laser beam with respect to the workpiece;
a beam size changing unit that changes the beam irradiation range that can be processed by one shot of beam irradiation to the workpiece;
a processing chip distribution information acquisition unit that acquires distribution information of chips to be processed distributed on a workpiece;
a machining pattern information generating unit that generates machining pattern information for each workpiece to be machined based on the distribution information of the chips to be machined;
a machining control unit for sequentially machining a plurality of machining target chips distributed on the workpiece based on the machining pattern information;
The machining pattern information generation unit
A collective processing area searching unit is provided for searching for an area that can be collectively processed in one shot for a plurality of adjacent chips to be processed.

Another aspect of the present invention is
In a laser processing method for irradiating a laser beam to a plurality of chips to be processed which are unevenly distributed among a plurality of chips arranged in a matrix on a workpiece at a predetermined pitch,
a laser oscillator that emits a laser beam;
Relative movement means for changing the irradiation position of the laser beam with respect to the workpiece;
Using beam size changing means for changing the beam irradiation range that can be processed with one shot of beam irradiation to the work,
a step of acquiring distribution information of the chips to be processed distributed on the workpiece;
generating machining pattern information for each workpiece to be machined based on the distribution information of the chips to be machined;
sequentially machining a plurality of machining target chips distributed on the workpiece based on the machining pattern information;
The step of generating the machining pattern information has a step of searching for an area that can be collectively processed in one shot for a plurality of adjacent chips to be processed.

According to these laser processing apparatuses and methods, even if a large number of chips to be processed are unevenly distributed on the workpiece, the chips to be processed are densely distributed (that is, a plurality of chips to be processed are adjacent to each other in a cluster). Since the places where the parts are stuck are processed collectively, the processing time can be shortened.

According to these laser processing apparatuses and methods, even if a large number of chips to be processed are unevenly distributed on the workpiece, rapid processing can be performed and productivity is improved.

BRIEF DESCRIPTION OF THE DRAWINGS It is the schematic which shows the whole structure of an example of the form which embodies this invention. 1 is a plan view showing an example of a work handled in a mode embodying the present invention; FIG. FIG. 2 is a plan view showing an example of collective machining of workpieces W handled in a mode embodying the present invention. It is a flow diagram in an example of a form which embodies the present invention. It is a schematic diagram showing the whole composition of another example of a form which embodies the present invention. It is sectional drawing which shows the example of chip|tip arrangement|positioning in the form which embodies this invention, and the state of chip transfer.

EMBODIMENT OF THE INVENTION Below, the form for implementing this invention is demonstrated, using a figure.

In the following description, the three axes of the orthogonal coordinate system are X, Y, and Z, the horizontal directions are expressed as the X direction and the Y direction, and the direction perpendicular to the XY plane (that is, the direction of gravity) is expressed as the Z direction. do. In the Z direction, the direction against gravity is expressed as up, and the direction in which gravity acts is expressed as down. Also, the direction of rotation with the Z direction as the central axis is called the θ direction. Also, the X direction is sometimes expressed as horizontal, the Y direction as vertical, and the XY directions as vertical and horizontal.

FIG. 1 is a schematic diagram showing the overall configuration of an example of a mode embodying the present invention. FIG. 1 shows a schematic diagram of a laser processing apparatus 1 according to the present invention.

The laser processing apparatus 1 irradiates a laser beam B on a plurality of chips Ck to be processed, which are unevenly distributed among a plurality of chips Cn arranged in a matrix on a work W at a predetermined pitch, to process the chips. be.
Specifically, the workpiece holder H and the laser processing apparatus 1 include a laser irradiation unit L, a relative movement unit 4, a processing chip distribution information acquisition unit 5, a processing pattern information generation unit 6, a processing control unit 7, and the like. .

The work holding part H holds the work W in a predetermined posture.
Specifically, the work holding portion H supports the work W from the lower side while maintaining a horizontal state. More specifically, the work holding portion H has a clamping mechanism, a negative pressure suction means, an electrostatic contact means, and the like, and is configured to hold the lower surface, outer edge, and the like of the work W. As shown in FIG.

Based on a control command from the processing control unit 7, the details of which will be described later, the laser irradiation unit L appropriately sets the laser beam B to a beam spot Ps having desired vertical and horizontal dimensions with an energy density sufficient for processing the chip Ck to be processed. Then, the workpiece W is irradiated with the laser beam. Specifically, the laser irradiation section L includes a laser oscillator 2, a mirror 21, a beam expander 22, a beam size changing section 3, an objective lens 25, and the like. Each part of the laser irradiation part L is attached to a frame (not shown) of the laser processing apparatus 1 directly or through a connecting metal fitting or the like.

The laser beam B can be classified into a laser beam B1 emitted from the laser oscillator 2, a laser beam B2 that has passed through the beam expander 22, and a laser beam B3 that has passed through the opening A of the aperture and the objective lens 25. are collectively referred to as a laser beam B.

The laser oscillator 2 emits a laser beam B in pulses. Specifically, the laser oscillator 2 receives a trigger signal output from the processing control unit 7 and emits a pulsed laser beam B1. More specifically, when focusing on the cross-sectional direction perpendicular to the optical axis, the laser beam B has a circular or elliptical spot shape, and has a generally Gaussian energy distribution (also referred to as a Gaussian beam profile). are doing. For example, the laser oscillator 2 may be a green laser (wavelength: 532 nm) that uses the second harmonic of a YAG laser (fundamental wavelength: 1064 nm).

The mirror 21 changes the direction of the laser beam B1. In the configuration of FIG. 1, the laser beam B1 emitted in the X direction is emitted by changing its direction downward.

The beam expander 22 converts (also called expanding) the laser beam B1 emitted from the laser oscillator 2 into a laser beam B2 having a desired spot diameter.

The beam size changing unit 3 changes a beam irradiation range Ps that can be processed with one shot of beam irradiation to the work W. As shown in FIG.
Specifically, the beam size changing unit 3 allows only a part of the laser beam B2 to pass through and shields the rest of the laser beam B2, so that the beam irradiation range Ps of the laser beam B3 irradiated to the workpiece W is set to a predetermined length and width. It is to be changed.
More specifically, the beam size changing section 3 includes a light shielding plate capable of changing the vertical and horizontal dimensions of the aperture A in the XY directions, and an actuator (not shown).

The light shielding plate is formed by combining four rectangular metal plates to form a rectangular opening A and a light shielding portion.

The actuator moves the light-shielding plates arranged opposite to each other across the opening A in the X direction or the Y direction to change the length and width of the opening A to desired dimensions.
Specifically, the actuator moves/stops the light shielding plate to a desired position based on a command from the processing control unit 7, and changes the beam irradiation range Ps that can be collectively processed in one shot with the laser beam B3. are doing.

For example, if the beam irradiation range Ps that can be set by the beam size changing unit 3 is set within a range corresponding to 1×1 to 6×6 chips Ck to be processed, the light shielding plates arranged opposite to each other are arranged in the vertical direction. The vertical and horizontal dimensions of the opening A are changed stepwise by moving/stopping at predetermined pitches in six steps in the horizontal direction.

The objective lens 25 projects an image of light passing through the opening A formed by the light shielding plate of the beam size changing section 3 onto the workpiece W. As shown in FIG. The objective lens 25 is composed of a lens group having a reduced projection magnification of, for example, 10 times, 20 times, 50 times, etc., and is attached to a revolver mechanism 26 .

The revolver mechanism 26 switches a plurality of objective lenses (that is, magnification) to change the projection magnification and energy density of the laser beam B3. Specifically, the revolver mechanism 26 is configured to selectively switch the objective lens 25 to be used based on a command from the processing control unit 7 to change the projection magnification and energy density of the laser beam B3.

In addition, the laser irradiation unit L may be configured to include a mirror 21, a beam expander 22, an attenuator, etc. (not shown) in the optical path of the laser beam B, if necessary.

The relative movement unit 4 changes the irradiation position of the laser beam B3 with respect to the work W. As shown in FIG. Specifically, the relative position of the workpiece W and the laser beam B3 is moved in the direction (XY direction) orthogonal to the thickness direction (Z direction) of the workpiece W. The relative positions and angles of one or more chips Ck to be processed and the beam irradiation range Ps are matched (that is, aligned). More specifically, the relative movement unit 4 includes an X-axis actuator 4x, a Y-axis actuator 4y, a θ-axis actuator 4θ, and the like.

The X-axis actuator 4x moves the workpiece holder H in the X direction at a predetermined speed and stops it at a predetermined position. The Y-axis actuator 4y moves the workpiece holder H in the Y direction at a predetermined speed and stops it at a predetermined position. The .theta.-axis actuator 4.theta. rotates the workpiece holder H at a predetermined angular velocity in the .theta. The X-axis actuator 4x, the Y-axis actuator 4y, and the .theta.-axis actuator 4.theta.

The alignment of the work W can be performed by a mechanical clamping method in which the outer periphery of the work W is clamped from the outside toward the inside, by capturing an image of a reference mark provided on the work W with a camera, or by notching a notch provided on the work W. A soft alignment method can be exemplified, in which the position and angle are grasped by imaging the orientation flat with a camera/detected with a sensor, etc., and the feed pitch and angle are corrected and controlled by a computer or the like during positioning movement.

The machined chip distribution information acquisition unit 5 acquires the distribution information J of the machining target chips Ck distributed on the work W. FIG.
Specifically, the processed chip distribution information acquisition unit 5 obtains the distribution information J of the chips to be processed Ck, which differ for each work W, from an upstream process device such as an inspection device, a work transport device, a host computer, or the like via a communication line or the like. to get through.

The distribution information J of the chips to be processed Ck indicates which of the chips to be processed Ck is the chip to be processed among the plurality of chips arranged in a matrix on the workpiece W at a predetermined pitch in the vertical and horizontal directions when the workpiece W is in a predetermined reference posture. is.

FIG. 2 is a plan view showing an example of a work W handled in a mode embodying the present invention. In FIG. 2, among a plurality of chips arranged in a matrix on a workpiece W at a predetermined pitch in all directions, white squares are normal chips and black squares are defective chips (chips to be processed Ck).

For example, as shown in the figure, when the workpiece W has a circular outer shape and the notch Wf (which may be an orientation flat) is set directly below as a reference, the distribution information J of the chips Ck to be processed is the center of the workpiece W and the It includes information (coordinate data, address value, flag information, etc.) for determining where the corresponding chip Ck to be processed is (also called discrimination or identification) based on the notch position or the like. there is

The machining pattern information generating unit 6 generates machining pattern information for each workpiece W to be machined based on the distribution information J of the chips Ck to be machined.

The processing pattern information includes the output of the laser beam B, the emission time of one shot of the laser beam B, the beam irradiation range Ps (more specifically, the vertical and horizontal dimensions of the opening A and the projection magnification of the objective lens 25 used. Also called processing size). , and information on the sequential machining of the chips Ck to be machined, such as the machining position and order.

The machining pattern information generation unit 6 includes a collective machining area searching unit that searches for an area that can be collectively machined in one shot for a plurality of adjacent machining target chips.

For example, if the beam irradiation range Ps that can be set by the beam size changing unit 3 is within the range of 1 x 1 to 6 x 6 chips Ck to be processed, the collective processing area searching unit performs batch processing. The area search unit searches for areas that can be collectively processed in one shot as follows.

FIG. 3 is a plan view showing an example of batch processing of the workpiece W handled in the mode embodying the present invention. In FIG. 3, similarly to FIG. 2, defective chips (chips to be processed Ck) are indicated by black squares, and areas to be collectively processed are indicated by dashed lines.

First, an area that can be collectively processed by 6×6 chips Ck to be processed is searched, and the processing size and processing position are set. Furthermore, for the remaining chips Ck to be processed, an area that can be collectively processed by 6×6 chips is searched, and the processing size and processing position are set. At this time, an area that can be collectively processed is searched so that the irradiation of the laser beam B3 does not overlap with respect to one processing target chip Ck.

Then, if there is no area that can be collectively processed in 6×6 rows for the remaining chips Ck to be processed, then an area in which 6×5 chips can be collectively processed is searched for.

Then, in the same way, 6×4 to 6×1, 5×6 to 5×1, 4×6 to 4×1, 3×6 to 3×1, 2×6 to 2×1, 1×6 Areas that can be collectively processed are searched in the order of ˜1×2, and the processing size and processing position of each area are set in the processing pattern information.

Then, the processing position is set as an area to be processed by 1×1 in length and width for the rest.

More specifically, the processing chip distribution information acquisition unit 5, the processing pattern information generation unit 6, or the batch processing area search unit are configured by a computer or the like (hardware) and its execution program (software). Based on the distribution information J of the chips Ck to be processed obtained for each target work W, there is provided a program for searching for an area that can be collectively processed and for generating processing pattern information in which the processing size and processing position are set.

The machining control unit 7 sequentially processes a plurality of machining target chips Ck distributed on the workpiece W based on the machining pattern information generated by the machining pattern information generation unit 6 .
Specifically, the processing control unit 7 appropriately changes the size of the aperture of the beam size changing unit 3, and the beam irradiation range Ps of the laser beam B3 and the plurality of processing target chips Ck distributed on the work W (FIG. 3). The relatively moving part 4 is relatively moved so that the defective portion indicated by the black square in (1) overlaps with the target chip Ck, and the laser beam B is sequentially irradiated, thereby sequentially processing the chips Ck to be processed.

Specifically, the processing control unit 7 has the following functions.
1) A function of transmitting a trigger signal for irradiating the laser beam B in a pulse form to the laser oscillator 2 .
2) A function of outputting a control signal to the revolver mechanism 26 of the laser irradiation unit L to switch the magnification of the objective lens 25 .
3) A function of controlling the actuator of the beam size changing unit 3 to change the vertical and horizontal dimensions of the opening A (that is, the beam irradiation range Ps that can be collectively processed in one shot with the laser beam B3).
4) Grasp the current position information of the X-axis actuator 4x, Y-axis actuator 4y, θ-axis actuator 4θ, etc., and control the movement speed, position, angle, etc. of the X-axis actuator 4x, Y-axis actuator 4y, θ-axis actuator 4θ, etc. and corrects the alignment, position, and angle of the workpiece W.
5) Based on the coordinate data and the like included in the processing information J acquired by the processing information acquisition unit 6, the relative movement unit M is controlled to relatively move the irradiation positions of the plurality of beam spots Ps on the workpiece W in the XY directions. , the function to rotate in the θ direction.

That is, the processing control unit 7 outputs control signals, data, etc. to the laser oscillator 2, the beam size changing unit 3, the relative movement unit 4, the revolver mechanism 26, etc., and controls each unit. More specifically, the machining control unit 7 is composed of a computer, a programmable logic controller, a control controller (hardware), and its execution program (software), and includes signal input/output means, data communication means, and the like. Each part can be controlled via

FIG. 3 is a flow diagram of an example of embodying the present invention. FIG. 3 shows a flow of performing laser processing on a work W using the laser processing apparatus 1 according to the present invention.

First, the workpiece W is placed and held on the workpiece holder H (step s10).
Next, the distribution information J of the chips Ck to be processed distributed on the workpiece W is obtained (step s11).

Next, a search is made for an area where collective processing is possible, and processing pattern information is generated (step s12). Specifically, using the machining pattern information generation unit 6 or the batch machining area searching unit, as described above, an area in which batch machining is possible is searched.

Then, the position of the light shielding plate of the beam size changing unit 3 is moved in the XY direction, and set to a beam irradiation range Ps (for example, 6×6 chips Ck to be processed) that can be collectively processed by one shot of beam irradiation. (step s13).

Then, the workpiece W is aligned as necessary (step s14), and according to the machining pattern information, the workpiece W is placed in a position where it can be collectively processed within the beam irradiation range Ps (for example, 6×6 chips Ck to be processed). are relatively moved/stopped, and machining is performed sequentially (step s15).

Next, it is determined whether or not there is a place to be processed with the same beam irradiation range Ps (step s16).

On the other hand, if there are no parts to be processed collectively with the same beam irradiation range Ps, it is determined whether to change the size to the next beam irradiation range Ps (for example, 6×5 chips Ck to be processed) and sequentially process them. A decision is made (step s18), and if there is, the position of the light shielding plate of the beam size changing unit 3 is moved in the XY direction, and processing is performed sequentially. That is, the above steps s13 to s18 are repeated.

Then, when there is no portion to be sequentially processed by changing the size to the next beam irradiation range Ps (that is, when the sequential processing of all the chips Ck to be processed is completed), the work holder H is relatively moved to the dispensing position, The holding of the work W is released, and the work W is delivered to the outside (step s20).

With such a configuration, according to the laser processing apparatus 1 and the laser processing method according to the present invention, among a plurality of chips arranged in a matrix at a predetermined pitch in the vertical and horizontal directions on the workpiece, the chips to be processed are uneven. Even if a large number of chips are distributed in the area, it is possible to search for an area where these chips to be processed can be collectively processed, and to process them collectively. Therefore, even if a large number of chips Ck to be processed are unevenly distributed on the workpiece W, the chips can be processed quickly and the productivity is improved.

[Modification]
In the above description, the beam size changing unit 3 moves/stops the light shielding plates arranged opposite to each other in six steps in the vertical direction and six steps in the horizontal direction at predetermined pitches, so that the vertical and horizontal dimensions of the opening A are changed stepwise. In this example, the beam irradiation range Ps can be set within a range of 1×1 to 6×6 in length and width of the chip Ck to be processed. However, the beam size changing unit 3 is not limited to such a configuration, and is based on the vertical and horizontal dimensions necessary for processing one chip to be processed, and the beam size changing unit 3 is for m vertical and n horizontal (however, m and n is a positive integer), and the beam irradiation range Ps that can be processed collectively in one shot can be changed.

In the above description, four metal plates are combined as the light shielding plate of the beam size changing unit 3 to form the rectangular opening A and the light shielding portion, and the light shielding plate is moved in the X direction or the Y direction so that the opening A is changed to desired vertical and horizontal dimensions.
However, the light shielding plate of the beam size changing unit 3 is not limited to such a configuration, and two substantially L-shaped metal plates are alternately combined and moved in the X direction or the Y direction to form the opening A. may be changed to desired vertical and horizontal dimensions.

In the above description, a plurality of objective lenses 25 are attached to the revolver mechanism 26 in the laser irradiation unit L, and the reduction projection magnification can be selectively switched based on the control signal output from the processing control unit 7. showed that.
However, the revolver mechanism 26 is not limited to the configuration switched by the control signal output from the processing control unit 7, and may be configured manually to switch. Furthermore, the revolver mechanism 26 in the laser irradiation unit L is not an essential configuration, and a configuration in which the objective lens 25 to be used is exchanged according to setup change, or a configuration in which one type of objective lens 25 is fixed and used may be used. Alternatively, the laser irradiation unit L may have a configuration in which a zoom lens is used to change the projection magnification instead of the configuration including the plurality of objective lenses 25 and the revolver mechanism 26 .

In the above description, as the relative movement unit 4, each part of the laser irradiation unit L is attached (that is, fixed) to the frame (not shown) of the laser processing apparatus 1 directly or via a connecting metal fitting or the like, and the work holding unit H is A configuration that moves in the XYθ direction is illustrated.
However, the relative movement section 4 is not limited to such a configuration, and may have a configuration in which the workpiece holding section H is fixed in part or all of the XYθ directions and the laser irradiation section L is moved.

In the above description, as the collective machining area search unit of the machining pattern information generation unit 6, the width and height of the machining target chip Ck are 6×6 to 6×1, 5×6 to 5×1, . 1, 1×6 to 1×2 are searched for areas that can be collectively processed, and the processing size and processing position are set.
However, the collective processing area search unit is not limited to such a procedure, and reverses the vertical and horizontal standards to obtain vertical and horizontal 6×6 to 1×6, 6×5 to 1×5, . . . It is also possible to search for areas that can be collectively processed in the order of 1×2, 6×1 to 2×1. Alternatively, a configuration in which a plurality of chips Ck to be processed are adjacent vertically/horizontally adjacent to each other is extracted, and a combination of these chips can be collectively processed while changing the vertical and horizontal dimensions of the beam irradiation range Ps. can be

In the above description, as the laser oscillator 2, a green laser (wavelength: 532 nm) using the second harmonic of a YAG laser is exemplified.
However, the laser oscillator 2 may use a YVO4 laser instead of the YAG laser. In addition, the laser oscillator 2 is not limited to processing using the second harmonic, and may process the workpiece W using the fundamental wave (wavelength 1064 nm), or may use a UV laser (wavelength 355 nm) or a deep ultraviolet laser (wavelength 266 nm) using the fourth harmonic may be used to process the workpiece W. Also, as the laser oscillator 2, a laser that outputs a different type or a different wavelength may be used, and the laser may be selected according to the energy absorption characteristics of the chip Ck to be processed.

[Another form]
In the above description, as the laser processing apparatus 1 and the laser processing method according to the present invention, among the plurality of chips Cn arranged in a matrix at a predetermined pitch in the vertical and horizontal directions on the workpiece W having a circular outer shape, a large number of chips Ck to be processed are unevenly distributed. On the other hand, a mode of processing by irradiating the laser beam B (B3) is exemplified.

However, in embodying the present invention, the workpiece W and the chip Ck to be processed are not limited to the above-described forms, and can be adapted to various forms. Specifically, the laser processing apparatus and method according to the present invention can also be applied to a mode in which the laser beam B is irradiated to transfer chips from the donor substrate Wd to the target substrate Wt.

FIG. 5 is a schematic diagram showing the overall configuration of an example of a mode embodying the present invention. FIG. 2 shows a schematic diagram of a chip transfer device 1B according to the present invention.

The chip transfer device 1B causes the transfer target chip Cd arranged on the surface of the donor substrate Wd to face the surface of the target substrate Wt, and irradiates the transfer target chip Cd with a laser beam B (B3) through the donor substrate Wd. Then, the transfer target chip Cd is transferred to the transfer target portion Cx set on the surface of the target substrate Wt.

Specifically, the chip transfer apparatus 1B includes the laser processing apparatus 1 described above, includes a donor substrate holding section Hd and a target substrate holding section Ht in place of the workpiece holding section H, and a relative movement unit 4 in place of the relative movement section 4. A part 4B is provided. In the chip transfer device 1B, the donor substrate Wd and the target substrate Wt correspond to the workpiece W to be processed by the laser processing device 1, and the transfer target chip Cd arranged on the surface of the donor substrate Wd corresponds to the laser processing device. 1 corresponds to one chip to be processed Ck.

The target substrate holding part 2t supports and holds the target substrate Wt in a predetermined posture. Specifically, the target substrate holding part 2t supports the target substrate Wt from the lower surface side while maintaining a horizontal state with the transfer target portion Cx facing the upper surface side. More specifically, the target substrate holding unit 2t includes a clamping mechanism, a negative pressure suction unit, an electrostatic adhesion unit, and the like, and is configured to hold the lower surface, outer edge, and the like of the target substrate Wt.

The donor substrate holding part 2d supports and holds a predetermined portion of the donor substrate Wd so that the transfer target chip Cd arranged on the surface of the donor substrate Wd faces the surface of the target substrate Wt. Specifically, the donor substrate holding unit 2d supports and holds the outer edge Wr of the donor substrate Wd via the carrier ring Wc while keeping the donor substrate Wd in a horizontal state with the transfer target chip Cd facing downward. is.

The transport ring Wc is a member for supporting and holding the outer edge portion Wr (upper surface side in the figure) of the donor substrate Wd to assist transport and fixation. Specifically, the carrier ring Wc is formed of an annular plate-like member, and the inner edge portion (lower surface side in the drawing) is tightly fixed to the outer edge portion Wr of the donor substrate Wd by an adhesive layer or the like.

More specifically, the donor substrate holding unit 2d includes a clamping mechanism, negative pressure suction means, electrostatic adhesion means (not shown), and the like (not shown). It is configured to hold the parts and the like.

FIG. 6 is a cross-sectional view showing an example of chip arrangement and a state of chip transfer in a mode embodying the present invention. 6A and 6B show a transfer target chip Cd arranged on the surface (lower surface side in the figure) of the donor substrate Wd and a transfer target portion set on the surface (upper surface side in the figure) of the target substrate Wt. A state in which the donor substrate Wd and the target substrate Wt are arranged to face each other at a predetermined interval so as to face Cx is shown. The donor substrate Wd is held by the donor substrate holder 2d via the carrier ring Wc. Further, the target substrate Wt is held by the target substrate holding portion 2t.

Positions P1 to P5 illustrate the relationship between the transfer target chip Cd and the transfer target site Cx facing each other.

At position P1, there are no normal chips Cn on the donor substrate Wd and there are normal chips Cn on the target substrate Wt. In such a case, since there is no need to perform chip transfer to the target substrate Wt, the transfer target chip Cn and the transfer target site Cx are not set.

At positions P2 and P5, the donor substrate Wd has normal chips Cn and the target substrate Wt lacks normal chips Cn. In such a case, since it is necessary to perform chip transfer to the target substrate Wt, normal chips Cn on the side of the donor substrate Wd are set as transfer target chips Cd1 and Cd2, and transfer target portions Cx1 and Cx1, Cx1 and Cx1 are transferred to the target substrate Wt. Cx2 is set.

At position P3, the donor substrate Wd has normal chips Cn, and the target substrate Wt also has normal chips Cn. In such a case, since there is no need to perform chip transfer to the target substrate Wt, the transfer target chip Cn and the transfer target site Cx are not set.

At position P4, there is no normal chip Cn on the donor substrate Wd, and no normal chip Cn on the target substrate Wt. In such a case, it is necessary to perform chip transfer to the target substrate Wt, but since there is no transfer target chip Cn, the transfer target portion Cx is not set.

Further, FIG. 6(a) shows that the chip to be transferred Cd1 is irradiated with the laser beam B (B3) in order to transfer the transfer target chip Cd1 to the transfer target portion Cx1 at the position P2. On the other hand, in FIG. 6B, the transfer target chip Cd1 is transferred to the transfer target site Cx1 at the position P2. is irradiated with a laser beam B (B3).

The relative movement part 4B moves the target substrate holding part Ht, the donor substrate holding part Hd, and the laser irradiation part L relative to each other.
Specifically, the relative movement unit 4B moves the target substrate Wt and the donor substrate Wd so that the target substrate holding unit Ht and the donor substrate holding unit Hd are opposed to each other with a predetermined positional relationship. The irradiation position of the laser beam B3 emitted from the laser irradiation unit L is changed with respect to Wd and Wt. The relative movement unit 4B moves the relative positions of the substrates Wd and Wt and the laser beam B3 in the direction (XY direction) orthogonal to the thickness direction (Z direction) of the donor substrate Wd and the target substrate Wt. At the time of transfer (irradiation of the laser beam B3), the relative position and angle between one or more transfer target chips Cd set on these substrates Wd and Wt and the beam irradiation range Ps are matched (that is, aligned). ing. More specifically, the relative movement section 4B includes a first X-axis actuator 41x, a first Y-axis actuator 41y, a second X-axis actuator 42x, a second Y-axis actuator 42y, a θ-axis actuator 4θ, and the like.

The first X-axis actuator 41x moves the target substrate holding part Ht and the donor substrate holding part Hd in the X1 direction at a predetermined speed and stops them at a predetermined position.
Specifically, the first X-axis actuator 41x has a rail attached to the device frame 10f and having a predetermined length in the X1 direction. It consists of a slider that can be A base plate 40 is attached to the slider.

The first Y-axis actuator 41y moves the target substrate holder Ht in the Y1 direction at a predetermined speed and stops it at a predetermined position.
Specifically, the first Y-axis actuator 41y can move on a rail having a predetermined length in the Y1 direction attached to the base plate 40 at a predetermined speed or stop at a predetermined position. Consists of a slider. A θ-axis actuator 4θ is attached to the slider.

The .theta.-axis actuator 4.theta. rotates the target substrate holding portion Ht in the .theta.-direction with the Z-direction as the rotation axis at a predetermined angular velocity, or makes it stand still at a predetermined angle.

The second X-axis actuator 42x moves the donor substrate holder Hd in the X2 direction at a predetermined speed and stops it at a predetermined position.
Specifically, the second X-axis actuator 42x can move on a rail having a predetermined length in the X2 direction attached to the base plate 40 at a predetermined speed or stop at a predetermined position. Consists of a slider. A second Y-axis actuator 42y is attached to the slider.

The second Y-axis actuator 42y moves the donor substrate holder Hd in the Y2 direction at a predetermined speed and stops it at a predetermined position.
Specifically, the second Y-axis actuator 42y includes a rail having a predetermined length in the Y1 direction and a slider that can move on the rail at a predetermined speed and stop at a predetermined position. ing. A donor substrate holder Hd is attached to the slider.

The first X-axis actuator 41x, the first Y-axis actuator 41y, the θ-axis actuator 4θ, the second X-axis actuator 42x, and the second Y-axis actuator 42y are driven and controlled based on control signals output from the processing control section 7. In the relative movement section 4B, the X1 direction and the X2 direction are configured to match the X direction, and the Y1 direction and the Y2 direction are configured to match the Y direction.

The alignment between the donor substrate Wd and the target substrate Wt can be achieved by a mechanical clamping method in which the outer peripheral portions of these substrates Wd and Wt are clamped from the outside toward the inside, or by using a camera to measure reference marks given to these substrates Wd and Wt. The notches and orientation flats provided on these substrates Wd and Wt are imaged with a camera/detected with a sensor, etc. to grasp the position and angle, and the feed pitch and angle during positioning movement with a computer or the like. can be exemplified by a soft alignment method that corrects and controls the .

Since the relative movement part 4B has such a configuration, it is possible to relatively move the target substrate holding part Ht and the donor substrate holding part Hd, and the laser irradiation part L, and in turn, the donor substrate Wd and the target substrate. Relative movement and alignment of Wt, and relative movement between these substrates Wd and Wt and the laser irradiation section L can be performed.

When the donor substrate Wd and the target substrate Wt are held facing each other in order to transfer the transfer target chip Cd, the processed chip distribution information acquisition unit 5 in the chip transfer device 1B is set on the surface of the target substrate Wt. The distribution information J of the transfer target chip Cd arranged on the surface of the donor substrate Wd, which can be transferred to the transfer target site Cx, is obtained.

Further, in the chip transfer apparatus 1B, the processing pattern information generation section 6 is configured to generate processing pattern information for each target substrate Wt based on the distribution information J acquired by the processing chip distribution information acquisition section 5. FIG.

Further, in the chip transfer device 1B, the processing control unit 7 controls the relative movement unit 4B based on the processing pattern information generated by the processing pattern information generation unit 6, and directs the transfer target chip Cd over the donor substrate Wd. , the laser beam B3 is sequentially irradiated.

With such a configuration, according to the chip transfer apparatus 1B and the chip transfer method according to the present invention, among a plurality of chips arranged in a matrix at a predetermined vertical and horizontal pitch on the donor substrate Wd, the transfer target chip Cd Even if a large number of are distributed in spots, it is possible to search for an area where chip transfer is possible collectively, and chip transfer can be performed collectively. Therefore, even if a large number of transfer target chips Cd to be transferred from the donor substrate Wd to the target substrate Wt are unevenly distributed, the chips can be transferred quickly and the productivity is improved.

REFERENCE SIGNS LIST 1 laser processing device 2 laser oscillator 3 beam size changing unit 4 relative movement unit 5 processed chip distribution information acquisition unit 6 processing pattern information generation unit 7 processing control unit 21 mirror 22, 23 lens (beam expander)
25 objective lens 26 revolver mechanism W work Cn chip (normal)
Ck Chip to be processed (defective chip)
H Work holding part L Laser irradiation part B (B1, B2, B3) Laser beam Ps Beam irradiation range A Opening J Distribution information of chips to be processed 1B Chip transfer device 40 Base plate 41x First X-axis actuator 41y First Y-axis actuator 42x Second 2X-axis actuator 42y 2nd Y-axis actuator 4θ θ-axis actuator Hd Donor substrate holding portion Ht Target substrate holding portion Wd Donor substrate Wt Target substrate Cd Transfer target chip Cx Transfer target portion

Claims (5)

In a laser processing apparatus that irradiates a laser beam to a plurality of chips to be processed that are unevenly distributed among a plurality of chips arranged in a matrix on a workpiece at a predetermined pitch,
a laser oscillator that emits the laser beam;
a relative movement unit that changes the irradiation position of the laser beam with respect to the workpiece;
a beam size changing unit that changes a beam irradiation range that can be processed by one shot of beam irradiation with respect to the workpiece;
a processing chip distribution information acquisition unit that acquires distribution information of the processing target chips distributed on the workpiece;
a machining pattern information generating unit that generates machining pattern information for each work to be machined based on the distribution information of the chips to be machined;
a machining control unit for sequentially machining the plurality of machining target chips distributed on the workpiece based on the machining pattern information;
The machining pattern information generation unit is
1. A laser processing apparatus comprising a batch processing area search unit for searching for an area where a plurality of adjacent chips to be processed can be collectively processed in one shot.
In the beam size changing unit, the beam irradiation range is set to m vertical and n horizontal (where m and n are positive integers) based on the vertical and horizontal dimensions necessary for processing one chip to be processed. ) is set step by step in a group of blocks consisting of a combination of
The collectively machined part searching unit,
Searching for an area that can be collectively processed in one shot based on the combination information of the m pieces in the vertical direction and the n pieces in the horizontal direction that can be set by the beam size changing unit and the distribution information of the chips to be processed, The laser processing apparatus according to claim 1. Including the laser processing apparatus according to claim 1 or claim 2,
The workpiece is
a donor substrate on which a transfer target chip is arranged;
a target substrate on which a transfer target portion for transferring the transfer target chip is set,
a target substrate holding part that supports and holds the target substrate in a predetermined posture;
a donor substrate holding part that supports and holds a predetermined portion of the donor substrate so that the transfer target chip arranged on the surface of the donor substrate faces the surface of the target substrate;
The processing target chip is the transfer target chip that is transferred from the donor substrate to the target substrate by irradiation with the laser beam,
A chip transfer apparatus, wherein the laser beam is directed toward the transfer target chip through the donor substrate to transfer the transfer target chip to the transfer target portion set on the surface of the target substrate. In a laser processing method for irradiating a laser beam to a plurality of chips to be processed which are unevenly distributed among a plurality of chips arranged in a matrix on a workpiece at a predetermined pitch,
a laser oscillator that emits the laser beam;
relative movement means for changing the irradiation position of the laser beam with respect to the workpiece;
Using a beam size changing means for changing a beam irradiation range that can be processed by one shot of beam irradiation to the work,
acquiring distribution information of the chips to be processed distributed on the workpiece;
generating machining pattern information for each workpiece to be machined based on the distribution information of the chips to be machined;
sequentially machining the plurality of machining target chips distributed on the workpiece based on the machining pattern information;
The laser processing method, wherein the step of generating the processing pattern information includes a step of searching for an area that can be collectively processed in one shot with respect to a plurality of adjacent processing target chips. Including the laser processing method according to claim 4,
The workpiece is
a donor substrate on which a transfer target chip is arranged;
a target substrate on which a transfer target portion for transferring the transfer target chip is set,
supporting and holding the target substrate in a predetermined posture;
supporting and holding a predetermined portion of the donor substrate so that the transfer target chip arranged on the surface of the donor substrate faces the surface of the target substrate;
The processing target chip is the transfer target chip that is transferred from the donor substrate to the target substrate by irradiation with the laser beam,
In the step of sequentially processing the chips to be processed, the laser beam is irradiated toward the chips to be transferred through the donor substrate, so that the chips to be transferred are placed on the transfer target portion set on the surface of the target substrate. A chip transfer method characterized by transferring.

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