JP6801950B2 - Through Silicon Via and Semiconductor Package - Google Patents

Description

The present invention relates to a through silicon via substrate used in an electric / electronic device and a semiconductor package using the through electrode substrate.

In recent years, a deep ultraviolet LED device capable of irradiating deep ultraviolet (DUV) light having a wavelength (200 to 300 nm) shorter than that of ultraviolet (Ultraviolet: UV) light has been attracting attention. Deep UV LEDs are used for high-density optical information recording, information / electronic fields such as high-brightness / long-life fluorescent lighting equipment, high-speed decomposition processing of pollutants and allergens, sterilization, skin treatment, laser scalpels, sterilization / medical treatment such as cell selection. It is expected to be applied to such applications. It is known that the luminous efficiency of LED devices decreases due to heat generation. Even in deep ultraviolet LED devices, how to exhaust the heat generated by the LED element is important for efficient light emission and long life of the device.

Conventionally, various materials have been proposed for semiconductor package substrates such as LED devices. For example, Patent Document 1 discloses a glass-through substrate using TGV (Through-Glass-Via) technology as a through electrode substrate using a glass substrate as a substrate material. However, although the through silicon vias of these glass-through substrates are suitable for airtightness, the heat dissipation of the glass substrates is 1 W / m · K or less, so that high thermal conductivity is required for power semiconductor devices, deep ultraviolet LED packages, etc. Not suitable for.

Patent Document 2 discloses a through silicon via substrate using TSV (Through-Silicon-Via) technology as a through electrode substrate using a silicon substrate having excellent thermal conductivity. In order to realize a TSV wiring board, the through electrode must be electrically insulated from the silicon substrate. As an electrical insulating means, Patent Document 2 provides a ring-shaped separation groove penetrating a silicon substrate so as to surround a through electrode, forms a silicon film directly on the bottom surface and the side surface of the separation groove, and then forms the separation groove. A technique for forming an insulating film on a silicon film so as to fill the gap left inside, and thermally oxidizing the surface of the silicon film in contact with the inner peripheral side surface and the outer peripheral side surface of the separation groove to obtain a silicon thermal oxide film. It is disclosed. However, it is difficult for a silicon penetrating substrate to form a sufficiently thick insulating film, and the metal components constituting the through electrode vias are likely to be impaired in the silicon oxide film or the silicon substrate. There is a drawback to say. Furthermore, the through silicon vias of TSVs are constructed using plating or metal paste, but the metal particles that make up the vias are rough and there is a risk of voids and interface peeling, so it is difficult to ensure high airtightness and reliability of the package. There is also.

Japanese Unexamined Patent Publication No. 2001-160678 Japanese Unexamined Patent Publication No. 2008-251964

An object of the present invention is to solve the above problems, and to realize a through silicon via substrate and a semiconductor package having high thermal conductivity, high airtightness reliability, and deep ultraviolet weather resistance. ..

According to the present invention, a through lead composed of a silicon base and a high-density conductor inserted into a through hole provided in the silicon base, and a sealing glass in which the through lead and the silicon base are airtightly sealed are provided. A through silicon via substrate is provided. The silicon base surface may be provided with a silicon oxide film on a desired surface, if necessary. For example, a silicon oxide film may be provided on the wall surface of the through hole, and the penetrating lead may be used as a sealing allowance when air-sealing the silicon base.

According to another embodiment of the present invention, a penetrating lead composed of a silicon base and a high-density conductor inserted into a through hole provided in the silicon base, and a sealing glass in which the penetrating lead and the silicon base are airtightly sealed. Further, a semiconductor element fixed to the silicon base, a wiring means for conducting the semiconductor element and the penetrating lead, and a glass lid fixed to the silicon base by airtightly covering the periphery of the semiconductor element are provided. A semiconductor package characterized by the above is provided. As a means for fixing the silicon base to the glass lid, bonding using a brazing material or a low melting point glass material or anode bonding is used.

The high-density conductor constituting the penetrating lead material according to the present invention is made of a uniformly integral bulk conductor containing no voids, excluding a metal material formed from a plated metal material or a metal paste.

In the through electrode substrate and the semiconductor package according to the present invention, the through lead of the high-density conductor is glass-sealed to the silicon base, so that the package can be highly airtightly sealed. Therefore, the package can be sealed with an inert gas or vacuum, and the semiconductor element housed in the package is protected from contamination and deterioration, the life of the semiconductor device is extended, and the reliability is improved. Further, since the substrate uses a silicon base having excellent heat conduction, the heat generated by the mounted semiconductor element can be efficiently exhausted to the outside, and the functional deterioration due to the heat of the semiconductor element can be prevented. For example, in a deep ultraviolet LED device, it is possible to prevent a decrease in luminous efficiency due to heat. In addition, there is no material deterioration even when exposed to high-energy deep-ultraviolet light having a wavelength energy of 100 kcal / mol or more, and the life of the deep-ultraviolet LED device can be extended.

Further, since the through electrode substrate and the semiconductor package according to the present invention use silicon as the substrate material, it is possible to incorporate various semiconductor elements into the silicon base as needed. For example, in the case of an LED device equipped with an LED element, a Zener diode element is often used together for current stabilization, but by forming the Zener diode element on a silicon base, the mounting process of the Zener diode component can be omitted. it can.

The perspective view of the through silicon via substrate 10 which concerns on this invention is shown. The semiconductor package 20 according to the present invention is shown, (a) is a perspective view with a lid separated, (b) is a plan view, and (c) is a front cross section cut along DD of (b). The figure (d) shows the bottom view.

Hereinafter, the through silicon via substrate and the semiconductor package of the present invention will be described with reference to the drawings.

As shown in FIG. 1, the through silicon via substrate 10 according to the present invention includes a through lead 12 composed of a silicon base 11, a through lead 12 formed of a high-density conductor inserted through a through hole provided in the silicon base 11, and the through lead 12. It is characterized by including a sealing glass 13 that airtightly seals the silicon base 11. The high-density conductor constituting the penetrating lead 12 is made of a uniformly integrated bulk conductor containing no voids, and for example, a tungsten material, a molybdenum material, a Kovar alloy material, and a highly doped silicon material are suitable. The sealing glass 13 is selected from the group of soda lime glass, borosilicate glass, boric acid glass, aluminoborosilicate glass, aluminosilicate glass, and aluminoboric acid glass. The silicon base 11 may be provided with a silicon oxide film on a desired surface, if necessary.

As shown in FIG. 2, the semiconductor package 20 according to the present invention includes a silicon base 21, a through lead 22 composed of a high-density conductor inserted into a through hole provided in the silicon base 21, and the through lead 22 and silicon. Wiring means for conducting a semiconductor element 24 composed of a power semiconductor element or an LED element fixed to a silicon base 21 and a sealing glass 23 for which the base 21 is airtightly sealed, and the semiconductor element 24 and a penetrating lead. It is characterized in that the 25 and the glass lid 26 fixed to the silicon base 21 are provided by airtightly covering the periphery of the semiconductor element 24. The high-density conductor constituting the penetrating lead 22 is made of a uniformly integrated bulk conductor containing no voids, and for example, a tungsten material, a molybdenum material, a Kovar alloy material, and a highly doped silicon material are suitable. The sealing glass 23 and the glass lid 26 are selected from the group of soda lime glass, borosilicate glass, boronic acid glass, aluminoborosilicate glass, aluminosilicate glass, and aluminoborate glass. The means for fixing the silicon base 21 to the glass lid 26 and the means for fixing the glass top plate 26-2 to the reflector 26-2 made of borosilicate glass have a low melting point such as a brazing material such as AuSn alloy or bismuth-containing glass. Bonding using glass material or anode bonding is used.

In Example 1 of the through silicon via substrate 10 according to the present invention, as shown in FIG. 1, a silicon base 11, a tungsten through lead 12 inserted into a through hole provided in the silicon base 11, and the through lead 12 It is characterized by including a sealing glass 13 made of borosilicate glass in which the silicon base 11 and the silicon base 11 are hermetically sealed. The silicon base 11 is provided with a silicon oxide film on the wall surface of the through hole, and serves as a sealing allowance when the penetrating lead 12 is air-sealed to the silicon base 11.

In the second embodiment of the semiconductor package 20 according to the present invention, the silicon base 21, the tungsten penetrating lead 22 inserted into the through hole provided in the silicon base 21, and the penetrating lead 22 and the silicon base 21 are hermetically sealed. A wire bonding 25-1 that includes a sealed glass 23 made of borosilicate glass and further conducts a semiconductor element 24 composed of a deep ultraviolet LED element fixed to a silicon base 21 and the semiconductor element 24 and a penetrating lead 22. It is characterized in that a wiring means 25 including the pad electrode 25-2 and a glass lid 26 which airtightly covers the periphery of the semiconductor element 24 and is fixed to the silicon base 21 are provided. The glass lid 26 is a transparent glass top plate 26-2 made of low-alkali borosilicate glass (SCHOTT product number 8337) fused to each other and has deep ultraviolet light transmission, and a reflector 26-2 made of borosilicate glass. It consists of. Anode bonding is used as the fixing means between the glass lid 26 and the silicon base 21 and the fixing means between the transparent glass top plate 26-1 and the reflector 26-2.

In the semiconductor package 20 of the second embodiment, a Zener diode element, a control circuit, or the like for stabilizing the current of the deep ultraviolet LED element may be formed on the silicon base 21. Further, a metal layer such as aluminum may be applied to the reflection surface and the joint surface of the reflector 26-2.

The through silicon via substrate and semiconductor package according to the present invention are suitable for deep ultraviolet LED devices. Since the packaging material of the deep ultraviolet LED device is exposed to high energy deep ultraviolet light having a wavelength energy of 100 kcal / mol or more, it is preferably composed of a silicon material and a glass material which are DUV weather resistant materials. Ceramic materials such as AlN and organic materials such as plastics, which have a relatively low binding energy of 58 kcal / mol, may be decomposed and deteriorated when exposed to strong deep ultraviolet light, and are used for deep ultraviolet LED packaging materials. hard.

The present invention can be applied to through silicon via substrates used in electrical and electronic devices and semiconductor packages of power semiconductor devices and LED lighting devices. High-power deep-ultraviolet LED devices that require long-term durability, especially for high-energy deep-ultraviolet light, such as high-density light information recording devices, high-brightness, long-life fluorescent lighting devices, pollutants and allergens, etc. It can be used for high-speed decomposition processing equipment, germicidal lamps, skin treatment equipment, laser scalpels, cell sorting equipment, etc.

10 ... Through silicon via substrate,
20 ... Semiconductor package,
11,21 ... Silicon base,
12, 22 ... Penetration lead,
13, 23 ... Sealed glass,
24 ... Semiconductor element,
25 ... Wiring means,
25-1 ... Wire bonding,
25-2 ... Pad electrode,
26 ... Glass lid,
26-1 ... Top plate 26-2 ... Reflector.

Claims (2)

A uniformly integral bulk metal material that does not contain voids, except for those composed of a flat silicon base and a deposition film forming means including CVD film formation and sputter film formation inserted through holes provided in the silicon base. A silicon material and glass made of a deep ultraviolet light weather resistant material, which is provided with a penetrating lead made of a high-density conductor of the above, and a sealing glass in which the penetrating lead and the silicon base are hermetically sealed, and formed into a flat plate shape. through electrode substrate, characterized in that it consists of wood. A uniformly integral bulk metal material that does not contain voids, except for those composed of a flat silicon base and a deposition film forming means including CVD film formation and sputter film formation inserted through holes provided in the silicon base. It is provided with a penetrating electrode substrate made of a penetrating lead made of a high-density conductor of the above, and a sealing glass in which the penetrating lead and the silicon base are hermetically sealed, and further comprises a deep ultraviolet LED element fixed to the silicon base. The glass lid has a semiconductor element, a wiring means for conducting the semiconductor element and the penetrating lead, and a cap-shaped glass lid that airtightly covers the periphery of the semiconductor element and is fixed to the silicon base. Consists of a transparent glass top plate that is fused to each other and is transparent to deep ultraviolet light, and a reflector made of glass. Further, the packaging material is composed of silicon material and glass material, which are weather resistant materials for deep ultraviolet light. The transparent glass top plate is a semiconductor package characterized by being made of low-alkali borosilicate glass having deep ultraviolet light transmission .

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