JP6701565B2 - Electronic device, method of manufacturing electronic device, and mounting substrate including electronic device - Google Patents

Description

  Embodiments of the present disclosure relate to an electronic device including a plurality of elements and a manufacturing method thereof. Further, the embodiment of the present disclosure relates to a mounting board including an electronic device.

  In recent years, research on electronic devices having deformability has been conducted. For example, Patent Document 1 proposes that a rollable display is configured by providing organic transistors and pixel electrodes in a matrix on a film. Further, for example, Patent Document 2 discloses a pressure sensor that can be attached to the surface of a human body by combining a film in which organic transistors are provided in a matrix and a pressure-sensitive conductor whose resistance value changes according to the applied pressure. Propose to configure.

JP, 2008-159935, A International Publication No. 2015/1119211 Pamphlet

  In order to expand the use of the deformable electronic device, it is preferable that the electronic device is stretchable as well as bendable.

  The embodiment of the present disclosure has been made in consideration of such points, and an object thereof is to provide a stretchable electronic device.

  According to an embodiment of the present disclosure, a base material, a plurality of first lines provided on the base material, a plurality of second lines intersecting with the plurality of first lines, the first line and the second line. An element electrically connected to a line, wherein the base material includes a plurality of first portions supporting the corresponding first line, and a plurality of second portions supporting the corresponding second line. At least, the element is arranged in a unit area defined as an area surrounded by two adjacent first portions and two adjacent second portions, and the substrate is The electronic device has a hole formed in a portion of the unit region that does not overlap with the element.

  In the electronic device according to the embodiment of the present disclosure, the hole of the base material may include a through hole penetrating the base material.

  In the electronic device according to the embodiment of the present disclosure, the hole of the base material may include a recess not penetrating the base material.

  In the electronic device according to an embodiment of the present disclosure, the ratio of the area of the unit region in which the hole is formed to the area of the unit region may be 0.7 or more.

  One embodiment of the present disclosure includes a substrate and an electronic device provided on the substrate, wherein the electronic device includes a base material, a plurality of first lines provided on the base material, and a plurality of the first lines. A plurality of second lines intersecting with one line; and an element electrically connected to the first line and the second line, wherein the base material supports a plurality of corresponding first lines. At least a first portion and a plurality of second portions supporting the corresponding second lines are included, and the element is surrounded by two adjacent first portions and two adjacent second portions. The mounting substrate is disposed in a unit area defined as a divided area, and the base has a hole formed in a portion of the unit area that does not overlap the element.

  In the mounting substrate according to the embodiment of the present disclosure, the substrate may have flexibility.

  In the mounting substrate according to an embodiment of the present disclosure, the element includes a transistor element including an electrode and a semiconductor layer, and the mounting substrate further includes a pressure sensitive body electrically connected to the electrode of the transistor element. May be.

  One embodiment of the present disclosure includes a step of preparing a support, a base material preparing step of providing a base material having a plurality of holes formed on the support, and the hole of the base material being formed. A device forming step of forming a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and a device electrically connected to the first line and the second line in a non-existing region. And a plurality of first portions supporting the corresponding first line, and a plurality of second portions supporting the corresponding second line. And at least, and the element is arranged in a unit area defined as an area surrounded by two adjacent first portions and two adjacent second portions. Is the way.

  The method for manufacturing an electronic device according to an embodiment of the present disclosure may further include a separation step of separating the base material on which the element is formed from the support after the element formation step.

  In the method for manufacturing an electronic device according to an embodiment of the present disclosure, the support includes a support substrate, and a release layer provided on the support substrate, and the base material preparing step includes the base material, It may be provided on the side of the support on which the release layer is formed, and the separating step may include a step of dissolving the release layer.

  According to the embodiments of the present disclosure, it is possible to provide a stretchable electronic device.

It is a top view which shows the electronic device which concerns on one Embodiment. It is a top view which expands and shows the electronic device of FIG. FIG. 3 is a cross-sectional view of the electronic device of FIG. 2 viewed from a III-III direction. FIG. 9 is a plan view showing a modified example of the electronic device of FIG. 2. It is a figure which shows a mode that an electronic device expands-contracts. It is a figure which shows the example which comprises a pressure sensor using an electronic device. It is a figure which shows the circuit of a pressure sensor. It is a figure which shows the mounting substrate provided with an electronic device. It is a figure which shows the manufacturing apparatus which manufactures an electronic device. It is a figure which shows the process of preparing the support body provided with a support substrate and the peeling layer provided on the support substrate. It is a figure which shows the base material preparation process which provides a base material on a support body. It is a figure which shows the element formation process of forming an element on a base material. It is sectional drawing which shows the electronic device which concerns on a 1st modification. It is sectional drawing which shows the electronic device which concerns on a 2nd modification. It is a top view which shows the electronic device which concerns on a 2nd modification.

  Hereinafter, a configuration of an electronic device and a manufacturing method thereof according to an embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiments described below are examples of the embodiments of the present disclosure, and the present disclosure should not be construed as being limited to these embodiments. Further, in the present specification, terms such as “substrate”, “base material”, “sheet”, and “film” are not distinguished from each other based only on the difference in designation. For example, “substrate” and “base material” are concepts that include members that can be called sheets and films. Further, as used in this specification, the terms such as “parallel” and “orthogonal” and the values of length and angle that specify the shape and geometric conditions and their degrees are bound to strict meanings. Instead, the same function should be interpreted in a range including the extent to which it can be expected. Further, in the drawings referred to in this embodiment, the same portions or portions having similar functions are denoted by the same reference numerals or similar reference numerals, and repeated description thereof may be omitted. In addition, the dimensional ratios in the drawings may be different from the actual ratios for convenience of description, or a part of the configuration may be omitted from the drawings.

  Hereinafter, an embodiment of the present disclosure will be described with reference to FIGS. 1 to 12.

(Electronic device)
First, an electronic device 10 according to the present embodiment will be described with reference to FIG. FIG. 1 is a plan view showing the electronic device 10.

  The electronic device 10 includes a base 20, a plurality of first lines X and a plurality of second lines Y provided on the first surface 21 of the base 20, and a plurality of provided on the first surface 21 of the base 20. The transistor element 30 of FIG. Each of the plurality of first lines X1 to Xm extends along the first direction D1. In addition, each of the plurality of second lines Y1 to Yn extends along a second direction D2 that intersects the first direction D1. Therefore, when the electronic device 10 is viewed along the normal direction of the base material 20, the region of the electronic device 10 is defined by a plurality of first lines X and a plurality of second lines Y as shown in FIG. It is divided into a matrix. m and n are arbitrary positive integers. The plurality of transistor elements 30 are provided corresponding to the intersections of the plurality of first lines X1 to Xm and the plurality of second lines Y to Yn, respectively.

  In the present embodiment, the first direction D1 in which the plurality of first lines X1 to Xm extend is orthogonal to the second direction D2 in which the plurality of second lines Y1 to Yn extend. That is, the angle formed by the first direction D1 and the second direction D2 is 90°. However, the angle formed by the first direction D1 and the second direction D2 is not limited to 90°. In the following description, the first lines X1 to Xm may be referred to as the first line X when describing matters common to the first lines X1 to Xm. Further, when describing the items common to the second lines Y1 to Yn, the second lines Y1 to Yn may be referred to as the second line Y.

  As will be described later, the first line X is electrically connected to the gate electrode of the transistor element 30. The first line X is a line also called a scan line, a scan line, a word line, or the like. The second line Y is electrically connected to the source electrode of the transistor element 30. The second line Y is a line also called a signal line, a data line, a bit line, or the like.

  As shown in FIG. 1, the base material 20 includes a mesh portion that supports the first line X and the second line Y. Specifically, the base material 20 includes a plurality of first portions 20a extending in the first direction D1 and a plurality of second portions 20b extending in the second direction D2. The first portion 20a supports the corresponding first line X. In addition, the second portion 20b supports the corresponding second line Y. In the present embodiment, a region surrounded by two adjacent second portions 20b and two adjacent first portions 20a is referred to as a unit region 15. Each of the plurality of transistor elements 30 described above is arranged in a part of the unit region 15. In the present embodiment, an example in which one transistor element 30 is provided in one unit area 15 is shown, but the present invention is not limited to this, and a plurality of transistor elements 30 may be provided in one unit area 15. Good.

  Further, as shown in FIG. 1, the base material 20 further includes a third portion 20c located in the unit region 15 and supporting the transistor element 30. The third portion 20c of the base material 20 is configured so as not to spread over the entire unit region 15. In other words, the base material 20 has a hole formed in a portion of the unit region 15 that does not overlap the transistor element 30. In the present embodiment, the hole is a through hole 23 that penetrates from the first surface 21 of the base material 20 to the second surface 22.

  Hereinafter, the configuration of the electronic device 10 will be described in detail with reference to FIGS. 2 and 3. 2 is a plan view showing the electronic device 10 in an enlarged manner, and FIG. 3 is a cross-sectional view of the electronic device 10 of FIG. 2 seen from the III-III direction. Note that the gate insulating film 32 and the insulating layer 36, which will be described later, are omitted in FIG.

(Base material)
First, the base material 20 will be described in detail. In FIG. 2, reference numeral W1 represents the width of the second portion 20b of the base material 20 in the first direction D1, and reference numeral W2 represents the width of the first portion 20a of the base material 20 in the second direction D2. Further, the symbol L1 represents the distance in the first direction D1 between two adjacent second portions 20b, and the symbol L2 represents the distance in the second direction D2 between two adjacent first portions 20a. Represent Since the above-mentioned unit area 15 is defined by the two adjacent second portions 20b and the adjacent two first portions 20a, the unit area 15 is a quadrangle having an area 15S calculated by L1×L2. is there.

  The width W1, the width W2, the distance L1, and the distance L2 are measured based on, for example, an image obtained by photographing the electronic device 10 in a plan view as shown in FIG. As a system for measuring width and distance based on an image, for example, a CNC image measurement system Nexiv VMR-3030 manufactured by Nikon Corporation can be used. In this case, preferably, the average value of the results of measuring the width W1 at a plurality of points is used as the value of the width W1 and the like. For example, in the same unit area 15, the width W1 is measured at a plurality of points, for example, at least three points. Further, the width W1 is measured at a plurality of locations in each of the plurality of unit regions 15. The average value of the plurality of measurement results thus obtained is adopted as the value of the width W1. The same applies to the width W2, the distance L1, and the distance L2.

  The plurality of unit areas 15 for which the width W1 and the like are to be measured are preferably determined such that the distance between the center points of the plurality of target unit areas 15 is an appropriate value or more. For example, first, the target electronic device 10 is divided into two or more equal parts in the first direction and the second direction. For example, the electronic device 10 having an area of 150 mm×150 mm is virtually divided into three in the first direction and the second direction, and divided into nine regions having an area of 50 mm×50 mm. Next, the width W1 is measured at a plurality of locations, for example, three locations, with respect to the unit area 15 located at the center of the nine areas. The average value of the 27 measurement results obtained as a result is set as the value of the width W1 of the target electronic device 10.

The width W1 and the width W2 are, for example, preferably 4 μm or more and 1000 μm or less, and more preferably 7 μm or more and 700 μm or less.
Sufficiently securing the width of the first line X provided on the first portion 20a and the width of the second line Y provided on the second portion 20b by setting the width W1 and the width W2 to 4 μm or more. Therefore, the wiring resistance of the first line X and the second line Y can be made sufficiently low. Thereby, the transistor element 30 can be appropriately electrically driven or controlled. Further, the first line X and the second line Y can be formed by a general manufacturing method such as photolithography.
In addition, by setting the width W1 and the width W2 to 1000 μm or less, it is possible to prevent the parasitic capacitance in the circuit that drives or controls the transistor element 30 from becoming large enough to hinder the operation of the circuit.

Further, the distance L1 and the distance L2 are, for example, preferably 30 μm or more and 10000 μm or less, and more preferably 50 μm or more and 5000 μm or less.
By setting the distance L1 and the distance L2 to 30 μm or more, the width W1 of the second portion 20b and the width W2 of the first portion 20a, the width of the second line Y on the second portion 20b, and the width of the first portion 20a. The width of the first line X can be sufficiently secured. Therefore, the first line X and the second line Y can be formed by a general manufacturing method such as photolithography.
By setting the distance L1 and the distance L2 to 10000 μm or less, it is possible to sufficiently secure the distribution density of the transistor elements 30. Therefore, as will be described later, when the electronic device 10 is used to form a pressure sensor, for example, a sufficient number of measurement points for measuring pressure can be secured.

Further, W1/L1 representing the ratio of the width W1 of the second portion 20b of the base material 20 in the first direction D1 to the distance L1 in the first direction D1 between two adjacent second portions 20b is, for example, 0. It is preferably 0.005 or more and 0.5 or less, and more preferably 0.01 or more and 0.1 or less. Similarly, W2/L2 indicating the ratio of the width W2 of the first portion 20a of the base material 20 in the second direction D2 to the distance L2 in the second direction D2 between two adjacent first portions 20a is, for example, It is preferably 0.005 or more and 0.5 or less, more preferably 0.01 or more and 0.1 or less.
By setting the ratio to 0.005 or more, the width of the first line X provided on the first portion 20a and the width of the second line Y provided on the second portion 20b can be sufficiently secured. , The wiring resistance of the first line X and the second line Y can be made sufficiently low.
Further, by setting the ratio to 0.5 or less, it is possible to prevent the parasitic capacitance in the circuit that drives or controls the transistor element 30 from becoming large enough to hinder the operation of the circuit.

  The width W1 and the width W2 may be the same or different. Similarly, the distance L1 and the distance L2 may be the same or different. Similarly, the ratio W1/L1 and the ratio W2/L2 may be the same or different.

  As shown in FIG. 2, the third portion 20c is a rectangular portion that is connected to the first portion 20a and the second portion 20b and supports the transistor element 30. In FIG. 2, the symbol M1 represents the width of the third portion 20c in the first direction D1, and the symbol M2 represents the width of the third portion 20c in the second direction D2. The width M1 and the width M2 are preferably set such that the ratio of the area of the third portion 20c to the area of the unit region 15 is 0.3 or less. For example, when the unit region 15 and the third portion 20c both have a quadrangular shape and the distance L1 and the distance L2 are values within the above range, the width M1 and the width M2 are, for example, 16.2 μm or more and 5400 μm or less. Is preferable, and 27 μm or more and 2700 μm or less is more preferable.

  The width M1 and the width M2 can be measured using, for example, a Nikon CNC image measurement system Nexiv VMR-3030 in the same manner as in the case of the width W1, the width W2, the distance L1, and the distance L2 described above.

  Preferably, the width M1 of the third portion 20c is equal to or less than half of the above-described distance L1, that is, the width of the unit region 15 in the first direction D1, and more preferably equal to or less than 1/10. In addition, preferably, the width M2 of the third portion 20c is equal to or less than half of the above-described distance L2, that is, the width of the unit region 15 in the second direction D2, and more preferably equal to or less than 1/10.

  Preferably, the ratio of the area 23S of the region in which the through holes 23 are formed in the unit region 15 to the area 15S of the unit region 15 is 0.7 or more. By setting the area 23S in this way, the electronic device 10 can be made elastic. In addition, by setting the ratio to 0.7 or more, the area 23S of the region in which the through hole 23 is formed is sufficiently secured, so that when the electronic device 10 is expanded and contracted, the electronic device 10 is damaged. It can be suppressed. More preferably, the ratio of the area 23S to the area 15S is 0.9 or more. This allows the electronic device 10 to cope with a larger expansion/contraction operation. In the present embodiment, the area 23S can be calculated by subtracting the area 20S of the third portion 20c calculated by M1×M2 from the area 15S of the unit region 15.

In FIG. 3, the symbol T represents the thickness of the base material 20. The thickness T of the base material 20 is, for example, preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 200 μm or less.
By setting the thickness T of the base material 20 to 10 μm or more, the strength of the base material 20 is secured, and thereby, when the electronic device 10 is expanded and contracted, the base material 20 is prevented from being deformed until it yields. be able to.
Further, by setting the thickness T of the base material 20 to 200 μm or less, it is possible to secure sufficient elasticity of the base material 20. The thickness of the first portion 20a, the thickness of the second portion 20b, and the thickness of the third portion 20c of the base material 20 may be the same or different.

  As the thickness T of the base material 20, preferably, an average value of the results of measuring the thicknesses of the end portions of the base material 20 at a plurality of locations is used, as in the case of the width W1 described above. For example, the thickness of the end portion of the second portion 20b of the base material 20 is measured at at least two locations in the first direction D1, and the end portion of the first portion 20a of the base material 20 is provided at least at two locations in the second direction D2. Measure the thickness of. Let the average value of these measurement results be the thickness T of the base material 20.

The thickness of the base material 20 at each location can be measured using, for example, a micrometer. As the micrometer, for example, a high precision digimatic micrometer MDH-25M manufactured by Mitutoyo can be used.
Further, the thickness of the base material 20 at each position may be calculated by subtracting the thickness of the transistor element 30 alone from the total thickness of the electronic device 10. The total thickness of the electronic device 10 is the sum of the thickness of the transistor element 30 and the thickness of the third portion 20c of the base material 20 supporting the transistor element 30. The total thickness of the electronic device 10 can be measured using, for example, a micrometer such as a high precision digimatic micrometer MDH-25M manufactured by Mitutoyo Corporation. The thickness of the transistor element 30 alone can be measured, for example, as a step between the surface of the transistor element 30 and the surface of the third portion 20c of the base material 20. The level difference can be measured using, for example, a surface roughness measuring device SE4000 manufactured by Kosaka Laboratory.

  As a material for forming the base material 20, a material having flexibility such that the base material 20 is not broken when the base material 20 having the through holes 23 is expanded and contracted is used. For example, a resin material such as an epoxy resin, an acrylic resin, a styrene resin, a polyimide resin, a polyvinyl alcohol resin, or a polyparaxylylene resin can be used as a material forming the base material 20. Further, when the through holes 23 are formed by the photolithography method, as the material forming the base material 20, a material having photosensitivity obtained by mixing the above resin material with a photoacid generator or the like is used.

(Transistor element)
Hereinafter, the transistor element 30 arranged on the third portion 20c of the base material 20 will be described in detail. As shown in FIG. 3, the transistor element 30 includes a gate electrode 31, a gate insulating film 32, a source electrode 33, a drain electrode 34, a semiconductor layer 35, and an insulating layer 36.

  The transistor element 30 shown in FIG. 3 is a so-called top gate type transistor element. In this case, the source electrode 33, the drain electrode 34, and the semiconductor layer 35 are provided on the first surface 21 of the third portion 20c. The gate insulating film 32 is provided so as to cover the source electrode 33, the drain electrode 34, and the semiconductor layer 35, and the gate electrode 31 is provided on the gate insulating film 32. The insulating layer 36 is provided so as to cover the gate electrode 31 and the gate insulating film 32. Although not shown, the transistor element 30 may further include other layers such as a passivation layer forming the surface of the transistor element 30.

  The gate electrode 31 is electrically connected to the first line X. For example, as shown in FIG. 2, the transistor element 30 includes a first connection line 31a extending so as to connect the gate electrode 31 and the corresponding first line X. The first connection line 31a has a width smaller than that of the gate electrode 31 in the first direction D1. The source electrode 33 is electrically connected to the second line Y. For example, as shown in FIG. 2, the transistor element 30 includes a second connection line 33a extending so as to connect the source electrode 33 and the corresponding second line Y. The second connection line 33a has a width smaller than that of the source electrode 33 in the second direction D2. Although not shown, the gate electrode 31 may be directly connected to the first line X. Similarly, the source electrode 33 may be directly connected to the second line Y.

  As shown in FIG. 2, the drain pad 34 a may be connected to the drain electrode 34. In this case, as shown in FIG. 3, an opening 37 is formed in a portion of the gate insulating film 32 and the insulating layer 36 that overlaps with the drain pad 34a, and a through electrode 38 connected to the drain pad 34a is formed in the opening 37. It may be provided. The through electrode 38 is used when a pressure sensor is formed using the electronic device 10 as described later.

  As a material forming the gate electrode 31, the gate insulating film 32, the source electrode 33, the drain electrode 34, the insulating layer 36, and the through electrode 38, a known material used in a transistor element is used. For example, the material disclosed in JP 2010-79196A can be used.

  As a material for forming the semiconductor layer 35, either an inorganic semiconductor material or an organic semiconductor material may be used, but an organic semiconductor material is preferably used. The organic semiconductor material can generally be formed on the substrate 20 at a lower temperature than the inorganic semiconductor material. Therefore, the base material 20 can be made of a material having low heat resistance. Further, it becomes possible to form the organic semiconductor material on the base material 20 by using a coating process such as a printing method.

  As the organic semiconductor material, a low molecular weight organic semiconductor material such as pentacene or a high molecular weight organic semiconductor material such as polypyrrole can be used. More specifically, the low molecular weight organic semiconductor material and the high molecular weight organic semiconductor material disclosed in JP 2013-21190 A can be used. Here, the "low molecular weight organic semiconductor material" means, for example, an organic semiconductor material having a molecular weight of less than 10,000. The “polymer organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of 10,000 or more.

(Operation of the present embodiment)
In the present embodiment, as described above, the base material 20 includes the mesh-shaped first portion 20a and the second portion 20b that support the first line X and the second line Y, and the first portion 20a and the second portion. A third portion 20c provided in the unit region 15 defined by 20b and supporting the transistor element 30. Further, in the unit region 15, the through hole 23 is formed in the portion of the base material 20 other than the third portion 20c. In this case, the base material 20 can have elasticity due to the mesh structure. Specifically, for example, as shown in FIG. 4, when tension S is applied to the electronic device 10, the base material 20 expands and contracts by changing the angle θ formed by the first portion 20a and the second portion 20b. can do. The expansion and contraction due to such a mesh structure is performed by the first direction D1 in which the first portion 20a extends and the second direction D2 in which the second portion 20b extends before the tension S is applied to the electronic device 10. It is likely to occur in the third direction D3 that bisects the angle.

  Further, according to the present embodiment, by forming the through hole 23 in the base material 20, it is possible to reduce the volume of the base material 20 as compared with the case where the through hole 23 is not formed. This also contributes to enhancing the stretchability and bendability of the base material 20.

  Although FIG. 2 described above shows an example in which the third portion 20c is directly connected to the first portion 20a and the second portion 20b, the present invention is not limited to this. For example, as shown in FIG. 5, the base material 20 may include a first connection portion 20d that connects the first portion 20a and the third portion 20c. In this case, the above-mentioned first connection line 31a is provided on the first connection portion 20d. The through hole 23 is widened between the first portion 20a and the third portion 20c until reaching the first connecting portion 20d, and therefore the first connecting portion 20d extends in the first direction D1 in the third portion 20c. It has a smaller width than.

  By connecting the first portion 20a and the third portion 20c via the first connecting portion 20d, it is possible to prevent the deformation and displacement of the first portion 20a from being obstructed by the third portion 20c. Thereby, the stretchability of the base material 20 can be further enhanced.

  Further, as shown in FIG. 5, the base material 20 may include a second connection portion 20e that connects the second portion 20b and the third portion 20c. In this case, the above-mentioned second connection line 33a is provided on the second connection portion 20e. The through hole 23 expands between the second portion 20b and the third portion 20c until it reaches the second connecting portion 20e, so that the second connecting portion 20e extends in the second direction D2. It has a smaller width than.

  By connecting the second portion 20b and the third portion 20c via the second connecting portion 20e, it is possible to prevent the deformation and displacement of the second portion 20b from being obstructed by the third portion 20c. Thereby, the stretchability of the base material 20 can be further enhanced.

  In the example shown in FIG. 5, the area 23S of the through hole 23 can be approximately calculated by subtracting the area 20S of the third portion 20c calculated by M1×M2 from the area 15S of the unit region 15.

(Pressure sensor)
Hereinafter, an application example of the electronic device 10 according to the present embodiment will be described with reference to FIGS. 6 and 7. Here, an example of configuring a pressure sensor using the electronic device 10 will be described. FIG. 6 is a diagram showing a pressure sensor configured using the electronic device 10. FIG. 7 is a diagram showing a circuit of the pressure sensor.

  As shown in FIG. 6, the electronic device 10 further includes a first electrode 41, a pressure sensitive body 42, and a second electrode 43. The first electrode 41 is provided on the transistor element 30 and is electrically connected to the through electrode 38 of the transistor element 30. The pressure sensitive body 42 is provided on the first electrode 41, and the second electrode 43 is provided on the pressure sensitive body 42.

  The pressure sensitive body 42 is configured such that the electric resistance or the electrostatic capacitance of the pressure sensitive body 42 in the direction in which the pressure is applied changes according to the pressure applied to the pressure sensitive body 42. The pressure-sensitive body 42 is, for example, a so-called pressure-sensitive conductor configured such that the electric resistance of the pressure-sensitive body changes in the direction in which the pressure is applied, here, in the thickness direction, according to the pressure applied to the pressure-sensitive body. Can be used. The pressure-sensitive conductor includes, for example, rubber such as silicone rubber and a plurality of conductive particles such as carbon added to the rubber.

  When the pressure F is applied to the pressure sensor shown in FIG. 6, the pressure sensitive body 42 is compressed in the thickness direction at the portion to which the pressure F is applied. As a result, the particles in the pressure sensitive body 42 contact each other in the thickness direction, and the electric resistance value of the pressure sensitive body 42 in the thickness direction becomes low. Therefore, in the transistor element 30 connected to the pressure sensitive body 42 in the portion to which the pressure F is applied, the current flowing through the source electrode 33 and the drain electrode 34 increases. According to such a pressure sensor, the distribution of the pressure F applied to the pressure sensor can be calculated by detecting the current value flowing in each transistor element 30.

  In order to apply the pressure sensor widely in the fields of healthcare, sports equipment, building materials, etc., it is considered important that the pressure sensor can be fixed on a curved surface. Here, according to the pressure sensor using the electronic device 10 according to the present embodiment, it is possible to improve the ease of fixing the pressure sensor to the curved surface due to the elasticity due to the mesh structure of the base material 20. ..

(Mounting board)
Hereinafter, an example in which the electronic device 10 is mounted on the substrate 52 to form the mounting substrate 50 will be described with reference to FIG. 8.

  As shown in FIG. 8, the mounting substrate 50 includes a substrate 52 and the electronic device 10 provided on the substrate 52. According to the example shown in FIG. 8, since the substrate 52 supports the electronic device 10, it is possible to prevent the electronic device 10 from being damaged. Further, the handleability of the electronic device 10 can be improved. The application of the mounting substrate 50 is, for example, a display or a pressure sensor.

  The substrate 52 is not particularly limited as long as the surface of the substrate 52 has a certain degree of flatness. For example, the substrate 52 is a glass plate, a stainless plate, or the like. The substrate 52 may be a flexible member such as a resin film or thin glass having a thickness of 1 mm or less. The material of the resin film is, for example, polyethylene terephthalate, pentacene, polycarbonate, polyimide or the like. The term “flexibility” means flexibility that does not cause a fold in the substrate 52 when the substrate 52 is wound into a roll shape having a diameter of 10 mm in an environment of room temperature, for example, 25° C. ing. The “fold” is a deformation that appears on the substrate 52 and means a deformation that does not return even if the substrate 52 is wound in the opposite direction so as to restore the deformation.

  According to the mounting board 50 provided with the electronic device 10 according to the present embodiment, the mounting board 50 can be made elastic due to the mesh structure of the base material 20. Therefore, the mounting substrate 50 having an electronic function can be mounted on a stretchable movable member such as a wristband made of a rubber material. Therefore, the application of the electronic device 10 can be expanded, and various members can have various electronic functions.

(Method of manufacturing electronic device)
Hereinafter, a method of manufacturing the electronic device 10 will be described with reference to FIGS. 9 to 12. Here, an example in which the electronic device 10 is formed by forming the electronic device 10 on a support 70 described below and then separating the electronic device 10 from the support 70 will be described.

  FIG. 9 is a diagram showing a manufacturing apparatus 60 for manufacturing the electronic device 10. The manufacturing apparatus 60 separates the release layer forming unit 62 that forms the release layer 74 on the support substrate 72, the electronic device forming unit 64 that forms the electronic device 10 on the release layer 74, and the electronic device 10 from the support body 70. And a separating section 65 for

(Support preparation process)
In the manufacturing process of the electronic device 10, first, the wound body 72m around which the flexible support substrate 72 is wound is prepared. Next, the support substrate 72 is unwound from the winding body 72m, and the support substrate 72 is transported along the transport direction P1. Then, the peeling layer 74 is formed on the supporting substrate 72 using the peeling layer forming portion 62 while the supporting substrate 72 is being transported. Thus, the support 70 including the support substrate 72 and the peeling layer 74 provided on the support substrate 72 is prepared. FIG. 10 is a cross-sectional view of the support body 70 in the width direction P2 of the support body 70, which is orthogonal to the transport direction P1 of the support body 70.

  The support substrate 72 is a member that supports the electronic device 10 in the manufacturing process of the electronic device 10. As a material forming the support substrate 72, glass, metal, silicon or the like can be used.

  The peeling layer 74 is a layer that is dissolved by the dissolving fluid in the separation step of separating the electronic device 10 from the support substrate 72. The material forming the peeling layer 74 is not particularly limited as long as it can be dissolved in the dissolving fluid. For example, when the dissolving fluid contains a water component, the peeling layer 74 contains an inorganic compound having solubility in the water component. Particularly preferably, the release layer 74 contains a salt of an inorganic compound or a compound having boron, which dissolves in the water component by deliquescent. The salt is an inorganic compound in which all or some of the hydrogen ions contained in the acid are replaced with cations such as metal ions. Examples of salts of inorganic compounds having solubility in water components include hydrochloric acid salt, hydroiodic acid salt, hydrofluoric acid salt, hydrobromic acid salt, sulfuric acid salt, carbonic acid salt, and nitric acid. And the like. Examples of the compound containing boron include diboron trioxide, sodium borate, borax, and potassium borate.

  As shown in FIG. 10, the support 70 may further include a sealing layer 76 that covers the pair of side portions 74 e of the release layer 74. Accordingly, it is possible to prevent some processing liquid from entering between the support substrate 72 and the peeling layer 74 before the electronic device 10 is separated from the support 70. This can prevent the peeling layer 74 from peeling from the support substrate 72 before the electronic device 10 is separated from the support 70. As a material forming the sealing layer 76, a material different from the material forming the peeling layer 74 such as silicon oxide can be used.

(Substrate preparation process)
Next, as shown in FIG. 11, a base material preparation step of providing the base material 20 having the plurality of through holes 23 formed on the support 70 is performed. For example, first, a resin layer having photosensitivity is provided on the support 70 by a coating method or the like. Next, by exposing and developing the resin layer in a pattern corresponding to the through holes 23, the base material 20 having the plurality of through holes 23 formed therein can be obtained. As another example, a resin layer is printed on the support 70 in a pattern corresponding to the through holes 23 by a screen printing method, an inkjet printing method, or the like to obtain the base material 20 in which the plurality of through holes 23 are formed. May be.

(Element formation process)
Next, as shown in FIG. 12, an element forming step of forming the first line X, the second line Y, and the transistor element 30 in the region of the base material 20 in which the through hole 23 is not formed is performed.

  For example, first, a conductive layer is provided on the base material 20, and then the conductive layer is patterned to form the second line Y, the source electrode 33, and the drain electrode 34 on the base material 20. The conductive layer is, for example, a layer containing a metal material such as silver, copper, aluminum or an alloy thereof, or an oxide conductive material.

  Next, the semiconductor layer 35 is provided between the source electrode 33 and the drain electrode 34. After that, the gate insulating film 32 is provided over the source electrode 33, the drain electrode 34, and the semiconductor layer 35. Further, a conductive layer is provided on the gate insulating film 32, and then the conductive layer is patterned to form the gate electrode 31 on the gate insulating film 32. The first line X may be further formed from the conductive layer for the gate electrode 31. Note that the gate insulating film 32 is provided between the first line X and the second line Y at the intersection of the first line X and the second line Y.

  Then, the insulating layer 36 is provided on the gate electrode 31 and the gate insulating film 32. Further, a passivation layer may be provided on the insulating layer 36. Further, the opening 37 may be formed in the gate insulating film 32 and the insulating layer 36, and the through electrode 38 may be provided in the opening 37.

(Separation process)
Next, a separation step of separating the electronic device 10 from the support 70 using the separation unit 65 is performed. As shown in FIG. 9, the separating portion 65 discharges the dissolving fluid 68 toward the tip portion 74d of the peeling layer 74 in the transport direction P1, and the dissolving fluid 68 is the tip portion 74d of the peeling layer 74. And a pair of rollers 66 that come into contact with the support 70 and the electronic device 10 at a position where the rollers 70 come into contact with each other.

  The state of the dissolving fluid 68 is set so that it can contact the tip portion 74d of the peeling layer 74. For example, the dissolving fluid 68 is in a liquid state, a gas state, or a plasma state. For example, when the dissolving fluid 68 contains a water component, the dissolving fluid 68 is steam.

  In the separation step, the peeling layer 74 is continuously melted along the transport direction P1 by bringing the dissolving fluid 68 into contact with the tip portion 74d of the peeling layer 74. This allows the electronic device 10 to be continuously separated from the support substrate 72. In this way, it is possible to manufacture the electronic device 10 in a form extending along the transport direction P1.

  According to the manufacturing method described above, the constituent elements of the electronic device 10 can be supported by the support body 70 while the electronic device 10 is formed. Therefore, it is possible to prevent deformation such as stretching and bending from occurring in the base material 20 and other components of the electronic device 10. Therefore, the electronic device 10 having high dimensional accuracy can be obtained.

  Further, according to the manufacturing method described above, the electronic device 10 can be separated from the supporting substrate 72 by using the dissolving fluid 68 containing the water component. Therefore, it is possible to prevent the physical properties and electrical characteristics of the electronic device 10 from being deteriorated due to the dissolution fluid 68 coming into contact with the electronic device 10.

  Various modifications can be made to the above-described embodiment. Modifications will be described below with reference to the drawings as necessary. In the following description and the drawings used in the following description, for the portions that can be configured in the same manner as the above-described embodiment, the same reference numerals as those used for the corresponding portions in the above-described embodiment are used. A duplicate description will be omitted. Further, when it is clear that the effects obtained in the above-described embodiment can be obtained in the modified example as well, the description thereof may be omitted.

(First modification)
In the above-described embodiment, the hole formed in the base material 20 in the unit region 15 is the through hole 23 penetrating the base material 20. However, the present invention is not limited to this, and as shown in FIG. 13, the hole formed in the base material 20 may be a recess 24 that does not penetrate the base material 20. Note that the recess 24 may be formed on the first surface 21 side of the base material 20 as shown in FIG. 13, or, although not shown, is formed on the second surface 22 side of the base material 20. May be.

  In the following description, of the base material 20 belonging to the unit region 15, the region where the recess 24 is not formed is referred to as a first region R1, and the region where the recess 24 is formed is referred to as a second region R2. To call. The thickness T1 of the first region R1 is, for example, preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 200 μm or less. The thickness T2 of the second region R2 is preferably 0.2 μm or more and 5 μm or less, and more preferably 0.5 μm or more and 3 μm or less. Further, the thickness T3 of the first portion 20a and the second portion 20b supporting the first line X and the second line Y is, for example, preferably 10 μm or more and 200 μm or less, and more preferably 20 μm or more and 200 μm or less.

In the first region R1, the first portion 20a, and the second portion 20b, which are the portions that secure the strength of the base material 20, by setting the thickness T1 and the thickness T3 to 10 μm or more, the base when the electronic device 10 is stretched It is possible to prevent the material 20 from being deformed until it yields.
Further, by making the thickness T2 of the second region R2 sufficiently smaller than the thicknesses T1 and T3, the base material 20 can have sufficient flexibility. In addition, by setting the thickness T2 of the second region R2 to 0.2 μm or more, it is possible to prevent the second region R2 from being damaged when the electronic device 10 is expanded and contracted.

  The thickness T2 of the second region R2 is smaller than the thickness T1 of the first region R1 and smaller than the thickness T3 of the first portion 20a and the second portion 20b. Preferably, T2/T1 is 0.01 or more and 0.1 or less. In addition, T2/T3 is preferably 0.01 or more and 0.1 or less. By setting the thickness T1, the thickness T2, and the thickness T3 in this way, it is possible to prevent the base material 20 from being damaged when the electronic device 10 is expanded or contracted while the base material 20 has sufficient flexibility. can do.

As the thickness T1 and the thickness T3, preferably, as in the case of the above-described present embodiment, an average value of the results of measuring the thickness T1 and the thickness T3 at a plurality of locations is used.
For example, the thickness of the first region R1 of the base material 20 is measured at at least two locations in the first direction D1, and the thickness of the first region R1 of the base material 20 is measured at least at two locations in the second direction D2. The average value of these measurement results is taken as the thickness T1.
Further, the thickness of the end portion of the second portion 20b of the base material 20 is measured at at least two locations in the first direction D1, and the end portion of the first portion 20a of the base material 20 is at least two locations in the second direction D2. Measure the thickness of. The average value of these measurement results is referred to as thickness T3.

The thickness T1 and the thickness T3 at each location can be measured using, for example, a micrometer. As the micrometer, for example, a high precision digimatic micrometer MDH-25M manufactured by Mitutoyo can be used.
Further, similarly to the case of the present embodiment described above, the thickness T1 and the thickness T3 at each location may be calculated by subtracting the thickness of the transistor element 30 alone from the total thickness of the electronic device 10.

  The thickness T2 can be calculated based on, for example, the step between the first region R1 and the second region R2 or the step between the first portion 20a and the second portion 20b and the second region R2. .. For example, first, the steps are measured at a plurality of locations, for example, at least three locations, and the average value of the steps is calculated. Next, the thickness T2 can be calculated by subtracting the average value of the step from the value of the thickness T1 or the thickness T3. As a device for measuring the step, for example, a surface roughness measuring device SE4000 manufactured by Kosaka Laboratory can be used.

  According to this modification, by forming the recesses 24 in the base material 20 belonging to the unit area 15, the deformation and displacement of the first portion 20a and the second portion 20b are hindered by the base material 20 belonging to the unit area 15. It can be suppressed. Thereby, the elasticity of the base material 20 can be improved.

  In addition, in the above-described embodiment and the first modification, the holes such as the through holes 23 and the recesses 24 may be formed in all of the plurality of unit regions 15, and one of the plurality of unit regions 15 may be formed. It may be formed in the part.

(Second modified example)
In the above-described embodiment and the first modified example, an example is shown in which holes such as the through holes 23 and the recesses 24 are formed in the base material 20 belonging to the unit region 15, and thereby the elasticity of the base material 20 is enhanced. It was In this modification, the ratio of the area of the element region 30R in which the transistor element 30 is arranged in the unit region 15 to the area 15S of the entire unit region 15 is reduced to increase the elasticity of the base material 20. explain. In this modification, the unit region 15 is defined as a region surrounded by two adjacent first lines X and two adjacent second lines Y.

FIG. 14 is a plan view showing an electronic device 10 according to the second modification. Further, FIG. 15 is a cross-sectional view of the electronic device of FIG. 14 seen from the XV-XV direction. As shown in FIG. 15, the base material 20 has a uniform thickness T. The thickness T is, for example, preferably 10 μm or more and 200 μm or less, more preferably 20 μm or more and 200 μm or less.
By setting the thickness T to 10 μm or more, it is possible to prevent the base material 20 from being deformed until it yields when the electronic device 10 is expanded and contracted. Further, by setting the thickness T of the base material 20 to 200 μm or less, it is possible to secure sufficient elasticity of the base material 20.

  As the thickness T of the base material 20, preferably, as in the case of the above-described present embodiment, an average value of the results of measuring the thicknesses of the end portions of the base material 20 at a plurality of locations is used. For example, the thickness of the end portion of the second portion 20b of the base material 20 is measured at at least two locations in the first direction D1, and the end portion of the first portion 20a of the base material 20 is at least two locations in the second direction D2. Measure the thickness of. Let the average value of these measurement results be the thickness T of the base material 20.

  In this modification, as shown in FIG. 14, a rectangular region having a straight line connecting the points C1 and C2 as a diagonal line is defined as an element region 30R in which the transistor element 30 is arranged. The point C1 is the intersection of the first line X and the second line Y. The point C2 is located at the farthest portion from the intersection C1 among the transistor elements 30 arranged in the unit region 15. The element region 30R has a width B1 in the first direction D1 and a width B2 in the second direction D2.

  In the example shown in FIG. 14, the point C2 is located on the drain pad 34a. The constituent element of the transistor element 30 where the point C2 is located is not limited to the drain pad 34a. For example, the constituent element of the transistor element 30 located farthest from the point C1 may be the insulating layer 36 or the passivation layer.

  The area 15S of the unit region 15 is calculated by A1×A2. In the present modification, A1 is a distance between two adjacent second lines Y in the first direction D1. A2 is the distance between two adjacent first lines X in the second direction D2.

  The width B1, the width B2, the distance A1, and the distance A2 are measured based on, for example, an image obtained by photographing the electronic device 10 in a plan view as shown in FIG. As a system for measuring a width and a distance based on an image, for example, as in the case of the width M1, the width M2, the distance L1, and the distance L2 in the above-described present embodiment, a CNC image measuring system Nexiv VMR manufactured by Nikon Corporation is used. -3030 can be used. In this case, preferably, the average value of the results of measuring the width B1 at a plurality of points is used as the value of the width B1 and the like. For example, in the same unit area 15, the width B1 is measured at a plurality of points, for example, at least three points. Furthermore, the width B1 is measured at a plurality of locations in each of the plurality of unit regions 15. The average value of the plurality of measurement results thus obtained is adopted as the value of the width B1. The same applies to the width B2, the distance A1, and the distance A2. The specific measuring method is the same as the case of the width M1, the width M2, the distance L1, and the distance L2 in the above-described present embodiment.

  In addition, in the present modification, the region of the unit region 15 excluding the element region 30R is referred to as a non-element region 25R. In the non-element region 25R, the transistor element 30 including a component having low elasticity such as a passivation layer does not exist on the base material 20. Therefore, the non-element region 25R is more easily deformed than the element region 30R. The area 25S of the non-element region 25R is calculated by subtracting the area 30S of the element region 30R from the area 15S of the unit region 15.

  In this modification, the ratio of the area 25S of the non-element region 25R to the area 15S of the unit region 15 is 0.7 or more, and more preferably 0.9 or more. By providing the non-element region 25R in the unit region 15 as described above, it is possible to prevent the deformation or displacement of the base material 20 from being hindered by the transistor element 30 arranged in the unit region 15. Thereby, the elasticity of the electronic device 10 can be improved.

  In the above description, the element region 30R is assumed to be a rectangular region having a width B1 in the first direction D1 and a width B2 in the second direction D2, but an example of calculating the area of the element region 30R has been described. , But not limited to this. For example, the area of the unit region 15 where the constituent elements of the transistor element 30 exist may be the area of the element region 30R.

(Other modifications)
Although the example in which the transistor element 30 is a so-called top gate type is shown in the above-described embodiment and modification, the invention is not limited to this. For example, although not shown, the transistor element 30 may be a so-called bottom gate type in which the gate electrode 31 is arranged closer to the base material 20 than the source electrode 33, the drain electrode 34, and the semiconductor layer 35.

  In the above-described embodiments and modified examples, the element arranged in the unit region 15 is the transistor element 30. However, the elements arranged in the unit region 15 are not particularly limited. For example, passive elements such as resistors and inductors may be arranged in the unit region 15.

  In the above-mentioned embodiment, the example in which the electronic device 10 is manufactured by separating the electronic device 10 from the support substrate 72 of the support 70 while conveying the support 70 has been described. That is, an example of manufacturing the electronic device 10 by the so-called roll-to-roll method has been shown. However, the invention is not limited to this, and the electronic device 10 may be manufactured by a so-called single wafer method. For example, first, a support 70 including a support substrate 72 having no flexibility and a peeling layer 74 provided on the support substrate 72 is prepared. Next, the electronic device 10 is formed on the support 70. Then, the release layer 74 is dissolved using a dissolving fluid, and the electronic device 10 is separated from the support substrate 72 of the support body 70, whereby the electronic device 10 can be obtained.

  In the above-described embodiments, the example in which the electronic device 10 is manufactured by forming the electronic device 10 on the support 70 and separating the electronic device 10 from the support substrate 72 of the support 70 has been shown. However, the manufacturing method of the electronic device 10 is not particularly limited as long as the electronic device 10 according to the above-described embodiment and the electronic device 10 according to each modification can be obtained. For example, the electronic device 10 may be formed on the substrate 52 to obtain the mounting substrate 50 that can be distributed as a product.

  Although some modified examples of the above-described embodiment have been described, it goes without saying that a plurality of modified examples can be appropriately combined and applied.

  Next, the present disclosure will be described more specifically by way of examples, but the present disclosure is not limited to the description of the following examples unless it exceeds the gist.

(Example 1)
[Manufacturing of electronic devices]
First, the support 70 including the support substrate 72, the peeling layer 74, and the sealing layer 76 was prepared. Specifically, first, a support substrate 72 having a square shape with a side of 150 mm and a thickness of 0.7 mm and made of alkali-free glass was prepared. Next, a peeling layer 74 made of borax having a thickness of 30 nm was formed on the supporting substrate 72 by a vacuum vapor deposition method. After that, a sealing layer 76 made of aluminum having a thickness of 100 nm was formed by a vacuum vapor deposition method.

  Next, the base material 20 having the first portion 20a, the second portion 20b, and the third portion 20c described above and having the plurality of through holes 23 formed thereon was provided on the support 70. Specifically, first, a negative photosensitive resin layer was formed on the support 70 by spin coating. As a material for the resin layer, an epoxy photosensitive resin SU-8 manufactured by Nippon Kayaku was used. Next, the resin layer was dried using a hot plate, and then the resin layer was exposed to ultraviolet rays through a shadow mask having a pattern corresponding to the through holes 23. As one EC1200N was used as the hot plate. Then, the exposed resin layer was developed with a developing solution to provide the base material 20 having the plurality of through holes 23 formed on the support 70. As a developing solution, a propylene glycol 1-monomethyl ether 2-acetate solution manufactured by Kanto Kagaku was used. After the development, the base material 20 was baked to cure the base material 20. As an oven for firing the base material 20, PVC-212 manufactured by Espec Corporation was used.

In the base material 20 formed as described above, the unit area 15 defined by the first portion 20a and the second portion 20b of the base material 20 has a square shape with a side of 1 mm, and the area 15S of the unit area 15 is It was 1 mm ² . Further, the third portion 20c connected to the first portion 20a and the second portion 20b has a square shape with one side of 0.3 mm, and the area 20S of the third portion 20c was 0.09 mm ² . Therefore, the ratio of the area 23S of the region in which the through holes 23 are formed in the unit region 15 to the area 15S of the unit region 15 is 0.91.

  Next, the first line X and the second line Y were formed on the first portion 20a and the second portion 20b of the base material 20, and the transistor element 30 was formed on the third portion 20c of the base material 20.

  Specifically, first, a conductive layer made of gold and having a thickness of 50 nm was provided on the base material 20 by the vacuum vapor deposition method. Next, the conductive layer was patterned by the photolithography method to form the second line Y on the second portion 20b and the source electrode 33 and the drain electrode 34 on the third portion 20c. In the photolithography method, first, a positive photoresist was provided on the conductive layer made of gold by spin coating. As the positive type photoresist, AZ5206 manufactured by AZ Electronics was used. Next, the photoresist was exposed through a mask and developed to form a resist pattern on the portion of the conductive layer where the second line Y, the source electrode 33 and the drain electrode 34 should be formed. Then, the conductive layer made of gold was etched by using AURUM manufactured by Kanto Kagaku as an etching solution. Next, the resist pattern was removed using a positive resist stripper manufactured by Kanto Kagaku.

Next, the semiconductor layer 35 was formed between the source electrode 33 and the drain electrode 34 using an inkjet device. As the inkjet device, DMP-2831 manufactured by Fujifilm Corporation was used. As the organic semiconductor material forming the semiconductor layer 35, Plexcore ^(R) OS 1100 manufactured by Sigma-Aldrich was used. Specifically, first, an organic semiconductor solution prepared by dissolving Plexcore ^(R) OS 1100 at a concentration of 1% by weight in decahydronaphthalene is applied using an inkjet device so as to cover the source electrode 33 and the drain electrode 34. did. Next, the applied organic semiconductor solution was dried on a hot plate to obtain a semiconductor layer 35.

  Next, the gate insulating film 32 was formed on the source electrode 33, the drain electrode 34, and the semiconductor layer 35. Specifically, a negative photosensitive resin layer was provided on the substrate 20 by spin coating. As the material of the resin layer, SU-8 manufactured by Nippon Kayaku Co., Ltd. was used as in the case of the base material 20. After that, the gate insulating film 32 was provided on the source electrode 33, the drain electrode 34, and the semiconductor layer 35 by patterning the resin layer in the same manner as the case of the base material 20.

  Next, a conductive layer made of gold and having a thickness of 50 nm was provided on the base material 20 by the vacuum vapor deposition method. Thereafter, the conductive layer is patterned in the same manner as the second line Y, the source electrode 33, and the drain electrode 34 to form the first line X on the first portion 20a and the gate electrode on the gate insulating film 32. 31 was formed.

  In this way, the electronic device 10 including the base material 20, the first line X, the second line Y, and the transistor element 30 was formed on the support 70.

  Next, the electronic device 10 was separated from the supporting substrate 72 of the supporting body 70. Specifically, first, the laminate including the support 70 and the electronic device 10 was immersed in an aluminum etchant manufactured by Wako Pure Chemical Industries, Ltd. to remove the sealing layer 76. Next, the laminate was exposed to pure water to remove the peeling layer 74. As a result, the electronic device 10 was separated from the support substrate 72.

[Evaluation of elasticity of electronic devices]
A rectangular sample having a length of 50 mm and a width of 30 mm was cut out from the electronic device 10. At this time, the sample was cut out from the electronic device 10 so that the above-described third direction D3 was the length direction of the sample.

  Next, the sample was stretched in the length direction by pulling the sample in the length direction. As a result, the sample stretched by 120% with respect to the original length. That is, the original sample having a length of 50 mm was stretched to a length of 110 mm. In addition, the operation of extending the sample to 120% of the original length and then returning it to the original length was repeated 10,000 times. After such 10,000 repeated evaluations, no plastic deformation or damage occurred in the sample. For this measurement, a Tensilon universal material testing machine RTF-2430 manufactured by Imada was used.

(Example 2)
An electronic device 10 was produced in the same manner as in Example 1 except that the third portion 20c had a square shape with a side of 0.5 mm and the area 20S of the third portion 20c was 0.25 mm ² . The ratio of the area 23S of the region in which the through hole 23 is formed in the unit region 15 to the area 15S of the unit region 15 is 0.75.

  Further, in the same manner as in Example 1, the sample was cut out from the electronic device 10 and the extensibility of the sample was evaluated. As a result, the sample was stretched to 70% of its original length. Further, after 10,000 times of repeated evaluation, no plastic deformation or damage occurred in the sample.

(Example 3)
An electronic device 10 was produced in the same manner as in Example 1 except that the third portion 20c had a square shape with a side of 0.8 mm and the area 20S of the third portion 20c was 0.64 mm ² . The ratio of the area 23S of the region in which the through holes 23 are formed in the unit region 15 to the area 15S of the unit region 15 is 0.36.

  Further, in the same manner as in Example 1, the sample was cut out from the electronic device 10 and the extensibility of the sample was evaluated. As a result, the sample was stretched to 4% of its original length. Further, after 10,000 times of repeated evaluation, no plastic deformation or damage occurred in the sample.

(Comparative Example 1)
An electronic device 10 was produced in the same manner as in Example 1 except that the through hole 23 was not formed in the base material 20.

  Further, in the same manner as in Example 1, the sample was cut out from the electronic device 10 and the extensibility of the sample was evaluated. As a result, when the elongation of the sample was less than 1%, the base material 20 of the sample was cracked and the transistor element 30 was broken.

10 electronic device 15 unit area 20 base material 20a first portion 20b second portion 20c third portion 20d first connecting portion 20e second connecting portion 21 first surface 22 second surface 23 through hole 24 recess 25R non-element region 30 transistor Element 30R Element region 31 Gate electrode 32 Gate insulating film 33 Source electrode 34 Drain electrode 34a Drain pad 35 Semiconductor layer 36 Insulating layer 37 Opening 38 Through electrode 41 First electrode 42 Pressure sensitive body 43 Second electrode 50 Mounting substrate 52 Substrate 60 Manufacturing apparatus 62 Release layer forming unit 64 Electronic device forming unit 65 Separation unit 70 Support 72 Support substrate 74 Release layer 76 Sealing layer R1 First region R2 Second region X1 to Xm First line Y1 to Yn Second line

Claims (8)

Base material,
A plurality of first lines provided on the base material;
A plurality of second lines intersecting the plurality of first lines;
An element electrically connected to the first line and the second line,
The base material includes at least a plurality of first portions supporting the corresponding first lines and a plurality of second portions supporting the corresponding second lines,
The element is arranged in a unit area defined as an area surrounded by two adjacent first portions and two adjacent second portions,
The base material is connected to the first portion and the second portion of one of the two first portions and the two second portions that define the unit area, and the other one of the first portion and the second portion. One portion and another one of the other second portions, which are not connected to each other, are formed in a third portion that supports the element and a portion of the unit region that does not overlap with the element, and penetrate the base material. An electronic device having a through hole . The electronic device according to claim 1, wherein a ratio of an area of a region in which the through hole is formed in the unit region to an area of the unit region is 0.7 or more. Board,
An electronic device provided on the substrate,
The electronic device is
Base material,
A plurality of first lines provided on the base material;
A plurality of second lines intersecting the plurality of first lines;
An element electrically connected to the first line and the second line,
The base material includes at least a plurality of first portions that support the corresponding first lines, and a plurality of second portions that support the corresponding second lines,
The element is arranged in a unit area defined as an area surrounded by two adjacent first portions and two adjacent second portions,
The base material is connected to the first portion and the second portion of one of the two first portions and the two second portions that define the unit area, and the other one of the first portion and the second portion. One portion and another one of the other second portions, which are not connected to each other, are formed in a third portion that supports the element and a portion of the unit region that does not overlap with the element, and penetrate the base material. A mounting board having a through hole . The mounting board according to claim 3 , wherein the board has flexibility. The device includes a transistor device including an electrode and a semiconductor layer,
The mounting substrate further comprises an electrically connected pressure sensitive element to the electrode of the transistor element, the mounting substrate according to claim 3 or 4. A step of preparing a support,
On the support, a base material preparing step of providing a base material having a plurality of through holes ,
Electricity is applied to a plurality of first lines, a plurality of second lines intersecting the plurality of first lines, and the first line and the second line in a region of the base material where the through holes are not formed. A step of forming elements that are electrically connected to each other,
A region of the base material in which the through hole is not formed has at least a plurality of first portions supporting the corresponding first line and a plurality of second portions supporting the corresponding second line. Including,
The element is arranged in a unit area defined as an area surrounded by two adjacent first portions and two adjacent second portions ,
The base material is connected to the first portion and the second portion of one of the two first portions and the two second portions that define the unit region, and the other one of the first portion and the second portion. One portion and another one of the other second portions, which are not connected to each other, are formed in a third portion that supports the element and a portion of the unit region that does not overlap with the element, and penetrate the base material. A method for manufacturing an electronic device , comprising: the through hole . The method of manufacturing an electronic device according to claim 6 , further comprising a separation step of separating the base material on which the element is formed from the support after the element formation step. The support comprises a support substrate and a release layer provided on the support substrate,
In the base material preparing step, the base material is provided on the side of the support on which the release layer is formed,
The method for manufacturing an electronic device according to claim 7 , wherein the separating step includes a step of dissolving the release layer.

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